Sensing-amplifying device

a technology of sensing amplifier and sensing device, which is applied in the direction of static storage, digital storage, instruments, etc., can solve the problems of reference current not being able to accurately adapt to the change of memory unit, and the single memory unit's judgment of data reading is liable to cause errors

Active Publication Date: 2020-06-25
JIANGSU ADVANCED MEMORY TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

The device enhances data reading accuracy by allowing dual memory unit operation, reducing errors associated with single memory unit reading and enabling flexible switching between modes to accommodate varying memory conditions.

Problems solved by technology

However, comparisons with current values may cause errors due to different bias voltages.
Furthermore, the judgment of data reading with a single memory unit is liable to cause errors.
The disadvantages of this structure are described below: (1) such memory can only be used in a memory device which has single memory mode; (2) the reference unit is a transistor, and the value of the reference current is related to the value of the reference bias.
During manufacturing, the process variation mechanism of the resistor in the memory unit is different from that of the transistor, so the reference current cannot accurately adapt to the change of the memory unit.

Method used

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Examples

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Embodiment Construction

[0017]The detailed description provided below in connection with the appended drawings is intended as a description of the present examples and is not intended to represent the only forms in which the present example may be constructed or utilized. The description sets forth the functions of the example and the sequence of steps for constructing and operating the example. However, the same or equivalent functions and sequences may be accomplished by different examples.

[0018]Unless otherwise defined herein, scientific and technical terminologies employed in the present disclosure shall have the meanings that are commonly understood and used by one of ordinary skill in the art. Unless otherwise required by context, it will be understood that singular terms shall include plural forms of the same and plural terms shall include singular forms of the same.

[0019]Reference is now made to FIG. 2. FIG. 2 is a block diagram of a sensing-amplifying device 100 and memories 500, 600 according to ...

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Abstract

A sensing-amplifier device includes a first input terminal, a second input terminal, a reference unit, and a sense amplifier. The reference unit is configured to provide a reference signal. The switching unit is selectively coupled to the first input terminal, the second input terminal, and a reference unit. The sense amplifier includes two terminals. The two terminals of the sense amplifier are coupled to the first input terminal and the second input terminal respectively by switching of the switching unit so as to operate in a twin memory unit mode, or one terminal of the sense amplifier is coupled to the first input terminal or the second input terminal and the other terminal of the sense amplifier is coupled to the reference unit by switching of the switching unit so as to operate in a single memory unit mode.

Description

RELATED APPLICATIONS[0001]This application claims priority to China Application Serial Number 201811591518.1, filed Dec. 25, 2018, which is herein incorporated by reference.BACKGROUND OF THE INVENTIONField of Invention[0002]The present invention relates to a sensing-amplifying device. More particularly, the present invention relates to a sensing-amplifying device applied in a memory.Description of Related Art[0003]In memory technology, a resistive random-access memory includes a phase change memory (PCM), which can change a resistance value of a component by a crystal phase change of the material thereof, so as to store information by a change in resistance value. When the material in the memory element is crystalline, it exhibits a low resistance value, and conversely, when the material in the memory element is in an amorphous state, it exhibits a high resistance value, thereby storing data such as “1” or “0”.[0004]In the prior art, when reading the data of the memory unit in the m...

Claims

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Application Information

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Patent Type & AuthorityApplications(United States)
IPC IPC(8): G11C7/06G11C11/4091
CPCG11C7/06G11C11/4091G11C2207/063G11C11/5678G11C16/12G11C13/004G11C7/062G11C7/08G11C7/12G11C2207/002G11C2013/0054G11C2013/0045G11C13/0004
InventorWU, JUI-JEN
OwnerJIANGSU ADVANCED MEMORY TECH CO LTD