Thin-film transistor device, utilizing different types of thin film transistors

a thin film transistor and transistor technology, applied in semiconductor devices, instruments, electrical devices, etc., can solve the problems of reducing the productivity of the tft substrate, unable to drive the pixel, and exhibiting lower reliability than the n-ch tft having the ldd region, so as to reduce the number of photolithography steps, improve the productivity, and reduce the cost of production

Inactive Publication Date: 2007-08-14
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0026]It is an object of this invention to provide a thin-film transistor device, a method of manufacturing the same, a thin-film transistor substrate equipped therewith, and a display device, which can be manufactured through a decreased number of photolithography steps, contribute to enhancing the productivity and help decrease the cost of production.
[0040]The invention makes it possible to decrease the number of the photolithography steps, to improve the productivity and to decrease the cost of production.

Problems solved by technology

However, the n-ch TFT (TFT having n-type of electric conduction) without LDD region exhibits characteristics that are deteriorated due to hot carriers and, generally, exhibits lower reliability than that of the n-ch TFT having the LDD region.
When the TFT3 is compared with the TFT4, the TFT3 is suited for the high-speed circuit (peripheral circuit) on account of its large on-current, but is not suited for driving the pixel due to its large off-current.
To manufacture the TFT substrate including the pixel electrode 144b, therefore, ten or more times of photo lithography steps are necessary resulting in a drop in the productivity of the TFT substrate and driving up the cost of manufacturing the TFT substrate.

Method used

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  • Thin-film transistor device, utilizing different types of thin film transistors
  • Thin-film transistor device, utilizing different types of thin film transistors
  • Thin-film transistor device, utilizing different types of thin film transistors

Examples

Experimental program
Comparison scheme
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first embodiment

[0082]A thin-film transistor device, a method of manufacturing the same, a thin-film transistor substrate provided therewith and a display device according to the invention will now be described with reference to FIGS. 1 to 9. FIG. 1 illustrates the constitution of a liquid crystal display device which is the display device according to the embodiment. The liquid crystal display device 1000 according to the embodiment includes a TFT substrate 1100, an opposing substrate (not shown) arranged facing the TFT substrate 1100 and liquid crystals sealed between the two substrates. The TFT substrate 1100 includes a display region 1110 where the pixel regions are arranged like a matrix, a gate driver 1120, a display controller 1140 and a data driver 1130 which are peripheral circuits. In the display region 1110, there are formed a plurality of TFTs (pixel TFTs) for driving pixels for each of the pixel regions. The TFTs for pixels are connected to the data driver 1130 through drain bus lines ...

third embodiment

[0101]Next, the thin-film transistor device, the thin-film transistor substrate provided therewith and the method of manufacturing the same according to the invention will be described with reference to FIGS. 13A to 20. FIGS. 13A to 20 are sectional views of steps illustrating the TFT device and the method of manufacturing the TFT substrate according to this embodiment. In FIGS. 13A to 20, a region for forming an n-ch TFT (first TFT) of the GOLD structure is illustrated on the left side, a region for forming an n-ch TFT (second TFT) of the partial GOLD structure is illustrated at the central portion, and a region for forming a p-ch TFT (third TFT) is illustrated on the right side.

[0102]Referring, first, to FIG. 13A, on the whole surface of the glass substrate 10, there are formed an underlying SiN film 12 of a thickness of, for example, 50 nm, an underlying SiO2 film 14 of a thickness of, for example, 200 nm and an a-Si film of a thickness of, for example, 40 nm in this order by usi...

fifth embodiment

[0117]Next, the thin-film transistor device, the thin-film transistor substrate provided therewith and the method of manufacturing the same according to the invention will be described with reference to FIGS. 24A to 31. FIGS. 24A to 31 are sectional views of steps illustrating the TFT device and the method of manufacturing the TFT substrate according to this embodiment. In FIGS. 24A to 31, a region for forming an n-ch TFT (first TFT) of the GOLD structure is illustrated on the left side, a region for forming an n-ch TFT (second TFT) of the partial GOLD structure is illustrated at the central portion, and a region for forming a p-ch TFT (third TFT) is illustrated on the right side.

[0118]Referring, first, to FIG. 24A, on the whole surface of the glass substrate 10, there are formed an underlying SiN film 12 of a thickness of, for example, 50 nm, an underlying SiO2 film 14 of a thickness of, for example, 200 nm and an a-Si film of a thickness of, for example, 40 nm in this order by usi...

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Abstract

A TFT device, a method of manufacturing the same, a TFT substrate and a display device, making it possible to decrease the photolithography steps, to improve the productivity and to decrease the cost of production. There are formed on the same substrate a first n-ch TFT having an LDD region which is entirely covered with a gate electrode, a second n-ch TFT having an LDD region partially covered with a gate electrode, and a p-ch TFT. Here, electrically conducting thin films and a gate electrode are formed on the electrically conducting thin film and on the insulating film, phosphorus ions are implanted into source / drain regions of the n-ch TFTs using the electrically conducting thin films and gate electrode as masks, and a gate electrode is formed by etching the electrically conducting thin film by using the electrically conducting thin film as a mask.

Description

BACKGROUND OF THE INVENTION[0001]1. Field of the Invention[0002]The present invention relates to a thin-film transistor device, a method of manufacturing the same, a thin-film transistor substrate provided therewith and a display device. More particularly, the invention relates to a thin-film transistor device having two kinds of polycrystalline silicon thin-film transistors of different types of electric conduction on the same substrate, a method of manufacturing the same, a thin-film transistor substrate provided therewith and a display device.[0003]2. Description of the Related Art[0004]Owing to its light weight, small thickness and low power consumption, a liquid crystal display device (LCD) has been used in wide field of applications such as finders of portable data terminals and video cameras and as display units of notebook PCs (personal computers). In order to decrease the cost, there has nowadays been widely used an LCD of the type of integrally forming the peripheral circu...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): H01L27/12G02F1/136G02F1/1368H01L21/00H01L21/28H01L21/336H01L21/77H01L21/8234H01L21/84H01L27/08H01L27/088H01L29/423H01L29/49H01L29/786
CPCH01L27/1214H01L27/124H01L27/127H01L27/1288
InventorHOTTA, KAZUSHIGE
OwnerSHARP KK