Internal voltage generating circuit

a voltage generation circuit and voltage generation technology, applied in pulse generators, instruments, pulse techniques, etc., can solve the problems of poor sensitivity, difficult to stably operate the mos transistor, severe operation conditions of the mos transistor, etc., and achieve the effect of sufficient controllability and stability

Inactive Publication Date: 2011-10-18
RENESAS ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Benefits of technology

[0018]The present invention has been made in view of the above circumstances and provides an internal voltage generating circuit which can make temperature compensation of an internal voltage over a broad temperature range with a high precision.
[0020]The standard voltage which has temperature dependence is A / D-converted, and added with a standard digital value. Since a digital additional value is utilized, it is possible to avoid that the operating conditions of the analog circuit become severe owing to the temperature compensation of the internal voltage, and it is possible to generate the power supply voltage (internal voltage) which has a temperature characteristic covering a broad range, with sufficient controllability and stability.

Problems solved by technology

However, when the temperature compensation of the internal voltage is made large with a wide voltage range, and when the internal voltage changes largely depending on temperature, there will occur a problem that an operating condition of the MOS transistor becomes severe.
Consequently, it becomes difficult to operate the MOS transistor stably and to secure operational stability of the circuit.
Also, as for an amplifier which generates a temperature-dependent voltage, the amplifier is forced to operate in an operation region with poor sensitivity in some cases, and it becomes difficult to generate voltage to which an accurate temperature compensation is made.

Method used

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embodiment 1

[0033]FIG. 1 schematically illustrates an entire configuration of the semiconductor integrated circuit device including an internal voltage generating circuit, according to Embodiment 1 of the present invention. As illustrated in FIG. 1, the semiconductor integrated circuit device 1 comprises a level setting circuit 2 which generates a basic voltage code (digital value) TN_VREF to specify a desired voltage level of an internal voltage VCPP, a reference voltage generating circuit 4 which generates a reference voltage VOUT16 independent of temperature, and an internal voltage generating circuit 6 which generates an internal voltage VCPP according to the basic voltage code TN_VREF and the reference voltage VOUT16. The internal voltage generating circuit 6 generates the internal voltage VCPP on an internal power supply line 9, and the internal voltage VCPP is used by an internal voltage using circuit 8.

[0034]The level setting circuit 2 generates the basic voltage code TN_VREF which s...

embodiment 2

[0098]FIG. 9 schematically illustrates a configuration of the principal part of an internal voltage generating circuit according to Embodiment 2 of the present invention. In the configuration illustrated in FIG. 9, a shifter 60 is provided between the A / D conversion circuit 12 and the adder circuit 14. The present shifter 60 executes a right shift operation by one bit or a left shift operation by one bit to the digital standard voltage code TN_VRFAD outputted by the A / D conversion circuit 12. By the operation, multiplication or division of the output code TN_VRFAD of the A / D conversion circuit 12 is performed. A shift code SHAD from the shifter 60 is supplied to the adder circuit 14, and added with the basic voltage code TN_VREF .

[0099]The configuration of the temperature characteristic adding circuit 10, the A / D conversion circuit 12, and the adder circuit 14 of the internal voltage generating circuit illustrated in FIG. 9, and the components of the remaining internal voltage gen...

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Abstract

A temperature-compensated internal voltage having a desired compensation range is generated with a sufficient controllability and stability. A temperature characteristic adding circuit generates a standard voltage having temperature dependence from a reference voltage not having temperature dependence. The standard voltage is A / D-converted and then added with standard code information (TN_VREF <4:0>) which specifies the level of the internal voltage. The additional value (TN_VREF2<4:0>) is D / A-converted to generate an offset voltage having temperature dependence. The internal voltage of a desired level is generated based on the offset voltage.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS[0001]The disclosure of Japanese Patent Application No. 2008-266336 filed on Oct. 15, 2008 including the specification, drawings and abstract is incorporated herein by reference in its entirety.BACKGROUND OF THE INVENTION[0002]The present invention relates to an internal voltage generating circuit which generates an internal voltage utilized inside an integrated circuit device, in particular, relates to configuration of the internal voltage generating circuit which has a temperature compensation function of the internal voltage.[0003]The operating characteristic of a semiconductor element has temperature dependence, and a value of resistance of a resistive element also has temperature dependence. When a circuit is comprised of an active element and a passive element, such as a semiconductor element and a resistive element, temperature dependence occurs in the operating characteristic of the circuit, making it difficult to stably obtain the desi...

Claims

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Application Information

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Patent Type & AuthorityPatents(United States)
IPC IPC(8): G05F1/10G05F3/02
CPCG11C5/147G11C16/30
InventorITO, TAKASHI
OwnerRENESAS ELECTRONICS CORP