Preparation method of high-quality copper-zinc-tin sulphur semiconductor film

Abstract

The invention discloses a preparation method of a high-quality copper-zinc-tin sulphur semiconductor film. The method comprises the following steps: through a vacuum heating evaporation mode, sequentially placing high-purity copper, zinc and tin, which are respectively put in different tungsten boats or molybdenum boats on a substrate which is heated to 20-200 DEG C, so as to obtain a metal film precursor; and then obtaining a high-quality copper-zinc-tin sulphur film by vulcanizing the metal film precursor. Adhesion of a precursor metal layer on the substrate and chemical combination among three elements are affected by changing the temperature of the substrate, so that the vulcanization efficiency is increased, and preparation of the high-quality copper-zinc-tin sulphur semiconductor film is achieved. The equipment disclosed by the invention is relatively simple, and easy to operate; the prepared film is high in purity, good in quality, high in film-forming rate, and high in efficiency; and the problems that impurities are formed at the vulcanization stage in the prior art to cause influence on film quality, long vulcanization time and high vulcanization temperature are solved.

Description

technical field

[0001] The invention belongs to the technical field of photoelectric materials, in particular to a method for preparing a high-quality copper-zinc-tin-sulfur semiconductor thin film. Background technique

[0002] The development of solar energy, a renewable and clean energy, has become one of the important strategic decisions to alleviate the increasingly serious environmental pollution and energy shortage problems. Therefore, solar energy utilization technology is the key to the sustainable development strategy of human beings. The core device of solar photovoltaic power generation is the solar cell. At present, solar cells are developing rapidly and there are many types. The earliest developed monocrystalline silicon solar cells have high production costs, so people began to study the preparation of polycrystalline silicon solar cells by depositing polycrystalline silicon thin films on cheap substrates. After that, Bell Laboratories in the United States ...

Examples

Embodiment 1

[0031] Put copper, zinc and tin with a molar ratio of 2:1:1 in three tungsten boats respectively, and place them in the vacuum chamber of a vacuum coating machine. Take the cleaned glass substrate and heat it to 50°C. According to the Cu-Zn- The sequential evaporation of Sn is complete to obtain the metal thin film precursor. Put the metal thin film precursor and a sufficient amount of high-purity sulfur powder in a tube furnace, heat it under the protection of nitrogen, first raise the temperature to 400 °C at a rate of 5 °C / min, and then keep it for 1 hour, and finally obtain a thickness of about 1.5 μm CuZnSnS semiconductor film.

Embodiment 2

[0033] Put copper, zinc and tin with a molar ratio of 5:3:2 in three tungsten boats respectively, and place them in the vacuum chamber of a vacuum coating machine. Take the cleaned silicon substrate and heat it to 20°C. According to the Sn-Zn -The sequential evaporation of Cu is complete to obtain the metal thin film precursor. Put the metal film precursor and a sufficient amount of high-purity sulfur powder in a tube furnace, heat it under the protection of argon, first raise the temperature to 200°C at a rate of 5°C / min, and then keep it for 2 hours. 1.6μm CuZnSnS semiconductor film.

Embodiment 3

[0035] Put copper, zinc and tin with a molar ratio of 3:2:2 in three molybdenum boats respectively, and place them in the vacuum chamber of a vacuum coating machine. Take the cleaned stainless steel substrate and heat it to 200°C. According to the Zn-Sn -The sequential evaporation of Cu is complete to obtain the metal thin film precursor. Put the metal film precursor and a sufficient amount of high-purity sulfur powder in a tube furnace, evacuate the tube furnace, and heat it up to 300 °C at a rate of 5 °C / min, then keep it warm for 0.5 h, and finally A copper-zinc-tin-sulfur semiconductor thin film with a thickness of about 1.4 μm was obtained.

technical field

[0001] The invention belongs to the technical field of photoelectric materials, in particular to a method for preparing a high-quality copper-zinc-tin-sulfur semiconductor thin film. Background technique

[0002] The development of solar energy, a renewable and clean energy, has become one of the important strategic decisions to alleviate the increasingly serious environmental pollution and energy shortage problems. Therefore, solar energy utilization technology is the key to the sustainable development strategy of human beings. The core device of solar photovoltaic power generation is the solar cell. At present, solar cells are developing rapidly and there are many types. The earliest developed monocrystalline silicon solar cells have high production costs, so people began to study the preparation of polycrystalline silicon solar cells by depositing polycrystalline silicon thin films on cheap substrates. After that, Bell Laboratories in the United States ...

Examples

Embodiment 1

[0031] Put copper, zinc and tin with a molar ratio of 2:1:1 in three tungsten boats respectively, and place them in the vacuum chamber of a vacuum coating machine. Take the cleaned glass substrate and heat it to 50°C. According to the Cu-Zn- The sequential evaporation of Sn is complete to obtain the metal thin film precursor. Put the metal thin film precursor and a sufficient amount of high-purity sulfur powder in a tube furnace, heat it under the protection of nitrogen, first raise the temperature to 400 °C at a rate of 5 °C / min, and then keep it for 1 hour, and finally obtain a thickness of about 1.5 μm CuZnSnS semiconductor film.

Embodiment 2

[0033] Put copper, zinc and tin with a molar ratio of 5:3:2 in three tungsten boats respectively, and place them in the vacuum chamber of a vacuum coating machine. Take the cleaned silicon substrate and heat it to 20°C. According to the Sn-Zn -The sequential evaporation of Cu is complete to obtain the metal thin film precursor. Put the metal film precursor and a sufficient amount of high-purity sulfur powder in a tube furnace, heat it under the protection of argon, first raise the temperature to 200°C at a rate of 5°C / min, and then keep it for 2 hours. 1.6μm CuZnSnS semiconductor film.

Embodiment 3

[0035] Put copper, zinc and tin with a molar ratio of 3:2:2 in three molybdenum boats respectively, and place them in the vacuum chamber of a vacuum coating machine. Take the cleaned stainless steel substrate and heat it to 200°C. According to the Zn-Sn -The sequential evaporation of Cu is complete to obtain the metal thin film precursor. Put the metal film precursor and a sufficient amount of high-purity sulfur powder in a tube furnace, evacuate the tube furnace, and heat it up to 300 °C at a rate of 5 °C / min, then keep it warm for 0.5 h, and finally A copper-zinc-tin-sulfur semiconductor thin film with a thickness of about 1.4 μm was obtained.

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