A semiconductor device modeling method and device

Abstract

The present invention provides a modeling method and device for a semiconductor device model, the method comprising: determining at least one temperature interval according to historical simulation results of an integrated circuit device; extracting corresponding device model parameters for different temperature intervals, and establishing corresponding sub-device models according to the model parameters; merging the sub-device models to obtain a current semiconductor device model; when the integrated circuit device needs to be simulated again, receiving a current identification value of the temperature interval, and determining a corresponding sub-device model in the current semiconductor device model according to the current identification value; simulating the integrated circuit device using the corresponding sub-device model; in this way, since different temperature intervals correspond to different sub-device models, when simulating the integrated circuit device, no matter what temperature range it is in, there is a suitable sub-device model to simulate the integrated circuit device, thereby ensuring simulation accuracy and meeting simulation requirements.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor device modeling, and in particular relates to a modeling method and device for a semiconductor device model. Background Art

[0002] With the development of integrated circuit technology and its increasingly widespread application, the requirements of high reliability, high performance and low cost must be considered when designing integrated circuits.

[0003] At present, integrated circuits are generally simulated and tested using device models in IC CAD simulation software. In ICCAD software, the MOSFET device model is the key link between integrated circuit device design and the functions and performance of integrated circuit device products. As the size of integrated devices becomes smaller and smaller, the scale of integration becomes larger and larger, and the integrated circuit process becomes more and more complex, the accuracy requirements for device models are also getting higher and higher.

[0004] With the application of integrated circuits in extremely high and low temperature fields, semiconductor device models need to be able to be simulated in a wider temperature range. However, the device models in the existing technology are generally only applicable within a certain temperature range. If the temperature range is exceeded, the simulation accuracy may not meet the simulation requirements. Summary of the invention

[0005] In response to the problems existing in the prior art, an embodiment of the present invention provides a modeling method and apparatus for a semiconductor device model, which is used to solve the technical problem that the device model in the prior art can only be applied within a certain temperature range, resulting in the simulation accuracy cannot be guaranteed when simulating integrated circuit devices within a wider temperature range.

[0006] The present invention provides a modeling method for a semiconductor device model, the method comprising:

[0007] Determine at least one temperature interval according to historical simulation results of the integrated circuit device; the historical simulation results are the results of simulating performance test data using a historical semiconductor device model, and the performance test data are the data required for simulating the integrated circuit device;

[0008] For different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters;

[0009] Merging the sub-device models to obtain a current semiconductor device model;

[0010] When the integrated circuit device needs to be simulated again, receiving the current identification value of the at least one temperature interval, and determining a corresponding sub-device model in the current semiconductor device model according to the current identification value;

[0011] The integrated circuit device is simulated using the corresponding sub-device model.

[0012] Optionally, after establishing the corresponding sub-device model according to the model parameters, the method further includes:

[0013] Setting a corresponding identification value for each temperature interval;

[0014] A mapping table is generated according to each of the temperature intervals, the identification value corresponding to each of the temperature intervals, and the sub-component model corresponding to each of the temperature intervals; the mapping table stores the correspondence between the temperature intervals, the identification value, and the sub-component model.

[0015] Optionally, determining a corresponding sub-device model in the semiconductor device model according to the current identification value includes:

[0016] Traversing the mapping table, matching the current identification value of the temperature interval with each identification value in the mapping table one by one;

[0017] Obtain the identification value that successfully matches the current identification value;

[0018] The corresponding sub-device model is searched in the mapping table based on the successfully matched identification value.

[0019] Optionally, determining at least one temperature interval according to historical simulation results of the integrated circuit device includes:

[0020] The at least one temperature interval is determined according to the degree of fit between the historical simulation results and the performance test data.

[0021] Optionally, extracting corresponding device model parameters for different temperature intervals and establishing corresponding sub-device models according to the model parameters includes:

[0022] For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree;

[0023] Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained;

[0024] A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

[0025] The present invention also provides a modeling device for a semiconductor device model, the device comprising:

[0026] A first determining unit is used to determine at least one temperature interval according to a historical simulation result of the integrated circuit device; the historical simulation result is a result of simulating performance test data using a historical semiconductor device model, and the performance test data is data required when simulating the integrated circuit device;

[0027] An establishing unit, used for extracting corresponding device model parameters for different temperature intervals, and establishing corresponding sub-device models according to the model parameters;

[0028] A merging unit, used for merging the sub-device models to obtain a current semiconductor device model;

[0029] A second determining unit is used to receive a current identification value of the temperature interval when the integrated circuit device needs to be simulated again, and determine a corresponding sub-device model in the semiconductor device model according to the current identification value;

[0030] A simulation unit is used to simulate the integrated circuit device using the corresponding sub-device model.

[0031] Optionally, the establishing unit is further used for:

[0032] Setting a corresponding identification value for each temperature interval;

[0033] A mapping table is generated according to each of the temperature intervals, the identification value corresponding to each of the temperature intervals, and the sub-component model corresponding to each of the temperature intervals; the mapping table stores the correspondence between the temperature intervals, the identification value, and the sub-component model.

[0034] Optionally, the establishing unit is specifically used for:

[0035] Traversing the mapping table, matching the current identification value of the temperature interval with each identification value in the mapping table one by one;

[0036] Obtain the identification value that successfully matches the current identification value;

[0037] The corresponding sub-device model is searched in the mapping table based on the successfully matched identification value.

[0038] Optionally, the first determining unit is specifically configured to:

[0039] The at least one temperature interval is determined based on the degree of fit between the historical simulation results and the performance test data; the performance test data is the data required for simulating the integrated circuit device.

[0040] Optionally, the establishing unit is specifically used for:

[0041] For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree;

[0042] Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained; and a corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

[0043] The present invention provides a modeling method and device for a conductor device model, the method comprising: determining at least one temperature interval according to historical simulation results of an integrated circuit device; the historical simulation results are the results of simulating performance test data using a historical semiconductor device model, and the performance test data are the data required for simulating the integrated circuit device; for different temperature intervals, extracting corresponding device model parameters, and establishing corresponding sub-device models according to the model parameters; merging the sub-device models to obtain a current semiconductor device model; when the integrated circuit device needs to be simulated again, receiving a current identification value of the temperature interval, and determining a corresponding sub-device model in the current semiconductor device model according to the current identification value; simulating the integrated circuit device using the corresponding sub-device model; in this way, since different temperature intervals correspond to different sub-device models, when simulating the integrated circuit device, no matter what temperature range it is in, there is a suitable sub-device model to simulate the integrated circuit device, thereby ensuring simulation accuracy and meeting simulation requirements. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] Figure 1 A schematic flow chart of a modeling method for a semiconductor device model provided by an embodiment of the present invention;

[0045] Figure 2 A historical simulation result diagram of simulating a MOSFET device using a historical semiconductor device model provided in an embodiment of the present invention;

[0046] Figure 3 A result diagram of simulating a MOSFET device using a current semiconductor model provided in an embodiment of the present invention;

[0047] Figure 4 A schematic diagram of the structure of a modeling device for a semiconductor device model provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0048] In order to solve the technical problem that the device model in the prior art is only applicable within a certain temperature range, resulting in the simulation accuracy not being guaranteed when simulating the integrated circuit within a wider temperature range, the present invention provides a modeling method and device for a semiconductor device model.

[0049] The technical solution of the present invention is further described in detail below through the accompanying drawings and specific embodiments.

[0050] Embodiment 1

[0051] This embodiment provides a modeling method for a semiconductor device model. Figure 1 As shown, the method includes:

[0052] S110, determining at least one temperature interval according to historical simulation results of the integrated circuit device;

[0053] When using a device model to simulate an integrated circuit device, the performance test data of the integrated circuit device is mainly simulated to obtain simulation results, which can generally be presented as a curve. The historical simulation results described here are simulation results obtained when the performance test data is simulated using a historical semiconductor device model; the performance test data is the data required for simulating an integrated circuit device.

[0054] As an optional embodiment, determining at least one temperature interval according to historical simulation results of the device includes:

[0055] According to the fit between the historical simulation results and the performance test data, it is determined that the performance test data in at least one temperature interval is the data required for simulating the integrated circuit device.

[0056] For details, please refer to Figure 2 , Figure 2 To use the existing semiconductor device model to simulate the historical simulation results of a MOSFET device, Figure 2 The curve in is the simulation result. Figure 2 The shape “■” in the figure is the performance test data.

[0057] from Figure 2 It can be seen that in the temperature range of -93℃ to 27℃, the historical simulation results and the performance test data have a good fit (high overlap); in the temperature range of -253℃ to -93℃, the historical simulation results and the performance test data have a poor fit (low overlap). Therefore, two temperature ranges can be determined based on the fit, namely -93℃~27℃ and -253℃~-93℃.

[0058] After the temperature interval is determined, each temperature interval corresponds to a historical sub-simulation result, and the historical sub-simulation results are merged together to form a historical simulation result.

[0059] S111, extracting corresponding device model parameters for different temperature ranges, and establishing corresponding sub-device models according to the model parameters;

[0060] In order to make the model applicable to a wide temperature range and improve the simulation accuracy of the model, a corresponding sub-device model is established for different temperature ranges; in this way, no matter what the required simulation temperature is, a suitable model can be found for simulation.

[0061] Specifically, for different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters. The device model parameters mainly include threshold voltage and temperature coefficient, etc.

[0062] As an optional embodiment, for different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters, including:

[0063] For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree;

[0064] Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained;

[0065] A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

[0066] Because for some temperature ranges, the accuracy of the historical sub-simulation results does not meet the simulation requirements, in order to ensure the simulation accuracy of the established sub-device model, it is necessary to re-fit the historical sub-simulation results corresponding to the temperature range with the performance test data based on the preset fit.

[0067] like Figure 2 As shown, since the historical sub-simulation result is a straight line with a linear relationship in a certain temperature range (the slope and parameters of the straight line can be determined), the target temperature coefficient and threshold voltage in the temperature range can be extracted based on the re-fitted simulation results.

[0068] It is worth noting that in some temperature ranges, the corresponding historical sub-simulation results can achieve the preset simulation accuracy. Therefore, for these temperature ranges, there is no need to re-fit the corresponding sub-simulation results to the performance test data based on the preset fit.

[0069] Continuing with the MOSFET device mentioned above as an example, the device model parameters are extracted within the temperature range of -93°C to 27°C, and the implementation of establishing the sub-device model is as follows:

[0070] .model nmos1 nmos

[0071] +level=49version=3.3 vth0=0.534669

[0072] …

[0073] +kt1=-0.181427

[0074] …

[0075] The device model parameters are extracted in the temperature range of -253℃ to -93℃, and the sub-device model is established as follows:

[0076] .model nmos2 nmos

[0077] +level=49 version=3.3 vth0=0.554029

[0078] …

[0079] kt1=-0.111882

[0080] …

[0081] Among them, nmos1 is the name of the sub-device model corresponding to the temperature range of -93°C to 27°C, nmos2 is the name of the sub-device model corresponding to the temperature range of -253°C to -93°C, vt is the threshold voltage, and kt is the temperature coefficient.

[0082] As an optional embodiment, after the sub-device models corresponding to the various temperature intervals are established, in order to quickly find a suitable sub-device model during simulation, after the corresponding sub-device models are established according to the model parameters, the following is further included:

[0083] Set the corresponding identification value for each temperature range;

[0084] A mapping table is generated according to each temperature interval, an identification value corresponding to each temperature interval, and a sub-device model corresponding to each temperature interval; the mapping table stores the corresponding relationship between the temperature interval, the identification value, and the sub-device model.

[0085] For example, the identifiers of various temperature intervals may be the same, such as temperaturemod. However, the identifier values ​​corresponding to the identifiers of different temperature intervals are different; for example, the identifier value of the temperature interval from -93°C to 27°C may be 1; the identifier value of the temperature interval from -253°C to -93°C may be 2. Then, a mapping table is generated for the sub-device model, temperature interval, and identifier value.

[0086] S112, merging the sub-device models to obtain a current semiconductor device model;

[0087] After the sub-device models corresponding to each temperature range are established, the sub-device models are merged to obtain an overall current semiconductor device model.

[0088] Continuing with the above MOSFET device as an example, the merged semiconductor device model is:

[0089] .lib TT

[0090] .subckt nmos dgsb w=20u l=20u

[0091] .if(Tempermod == 1)

[0092] M1 dgsb nmos1 w=wl=l

[0093] .elseif(Tempermod == 2)

[0094] M1 dgsb nmos2 w=wl=l

[0095] .endif

[0096] .ends

[0097] .model nmos1 nmos

[0098] +level=49 version=3.3 vth0=0.534669

[0099] …

[0100] +kt1=-0.181427

[0101] …

[0102] .model nmos2 nmos

[0103] +level=49 version=3.3 vth0=0.554029

[0104] …

[0105] kt1=-0.111882

[0106] …

[0107] .endl TT

[0108] Here, the present application combines various sub-device models together in the form of sub-circuits to form a current semiconductor device model; wherein subckt is a sub-circuit.

[0109] S113, when the integrated circuit device needs to be simulated again, receiving the current identification value of the temperature interval, and determining a corresponding sub-device model in the current semiconductor device model according to the current identification value;

[0110] When the integrated circuit device needs to be simulated again, the user can determine the current identification value of the temperature range according to the temperature range to be used. For example, if simulation is required within the temperature range of -93°C to 27°C, the current identification value should be 1. The user enters the current identification value into the simulation software.

[0111] After receiving the current identification value, the device model in the simulation software determines the corresponding sub-device model in the current semiconductor device model according to the current identification value.

[0112] As an optional embodiment, determining a corresponding sub-device model in the current semiconductor device model according to the current identification value includes:

[0113] Traverse the mapping table and match the current identification value of the temperature range with each identification value in the mapping table one by one;

[0114] Obtain an identification value that successfully matches the current identification value;

[0115] The corresponding sub-device model is searched in the mapping table based on the successfully matched identification value.

[0116] It should be noted that when simulation needs to be performed in multiple temperature intervals, the user only needs to enter the current identification value corresponding to each temperature interval.

[0117] S114, simulating the integrated circuit device using the corresponding sub-device model.

[0118] After the sub-device model is determined, the corresponding sub-device model can be used to simulate the integrated circuit device. Here, taking the above-mentioned MOSFET device as an example, the simulation result can be as follows: Figure 3 shown.

[0119] Depend on Figure 3 It can be seen that the performance test data has a high degree of fit with the simulation results, which indicates that the simulation accuracy of the semiconductor device model of the present application can be applied to a wide temperature range and the simulation accuracy can be guaranteed.

[0120] Based on the same inventive concept, the present application also provides a modeling device for a semiconductor device model, see Example 2 for details.

[0121] Embodiment 2

[0122] This embodiment provides a modeling device for a semiconductor device model, such as Figure 4 As shown, the device includes: a first determining unit 41, an establishing unit 42, a merging unit 43, a second determining unit 44 and a simulation unit 45;

[0123] A first determining unit 41, configured to determine at least one temperature interval according to historical simulation results of the integrated circuit device;

[0124] An establishing unit 42, for extracting corresponding device model parameters for different temperature intervals, and establishing corresponding sub-device models according to the model parameters;

[0125] A merging unit 43, used for merging sub-device models to obtain a semiconductor device model;

[0126] A second determining unit 44 is used to receive the current identification value of the temperature interval when the integrated circuit device needs to be simulated again, and determine the corresponding sub-device model in the semiconductor device model according to the current identification value;

[0127] The simulation unit 45 is used to simulate the integrated circuit device using the corresponding sub-device model.

[0128] Specifically, when simulating an integrated circuit device using a device model, the performance test data of the integrated circuit device is mainly simulated to obtain simulation results, which can generally be presented as a curve. The historical simulation results described here are simulation results obtained when simulating performance test data using historical semiconductor device models; performance test data is the data required for simulating an integrated circuit device.

[0129] As an optional embodiment, the first determining unit 41 is specifically configured to:

[0130] According to the fit between the historical simulation results and the performance test data, it is determined that the performance test data in at least one temperature interval is the data required for simulating the integrated circuit device.

[0131] For details, please refer to Figure 2 , Figure 2 To use the existing semiconductor device model to simulate the historical simulation results of a MOSFET device, Figure 2 The curve in is the simulation result. Figure 2 The shape “■” in the figure is the performance test data.

[0132] from Figure 2 It can be seen that in the temperature range of -93℃ to 27℃, the historical simulation results and the performance test data have a good fit (high overlap); in the temperature range of -253℃ to -93℃, the historical simulation results and the performance test data have a poor fit (low overlap). Therefore, two temperature ranges can be determined based on the fit, namely -93℃~27℃ and -253℃~-93℃.

[0133] After the temperature interval is determined, each temperature interval corresponds to a historical sub-simulation result, and the historical sub-simulation results are combined to form a historical simulation result.

[0134] In order to make the model applicable to a wide temperature range and improve the simulation accuracy of the model, the establishment unit 42 establishes a corresponding sub-device model for different temperature intervals; thus, no matter what the required simulation temperature is, a suitable model can be found for simulation.

[0135] Specifically, for different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters. The device model parameters mainly include threshold voltage and temperature coefficient, etc.

[0136] Then as an optional embodiment, the establishing unit 42 is specifically used for:

[0137] Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained;

[0138] A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

[0139] Because for some temperature ranges, the accuracy of the historical sub-simulation results does not meet the simulation requirements, in order to ensure the simulation accuracy of the established sub-device model, it is necessary to re-fit the historical sub-simulation results corresponding to the temperature range with the performance test data based on the preset fit.

[0140] like Figure 2 As shown, since the historical sub-simulation result is a straight line with a linear relationship in a certain temperature range (the slope and parameters of the straight line can be determined), the target temperature coefficient and threshold voltage in the temperature range can be extracted based on the re-fitted simulation results.

[0141] It is worth noting that in some temperature ranges, the corresponding historical sub-simulation results can achieve the preset simulation accuracy. Therefore, for these temperature ranges, there is no need to re-fit the corresponding sub-simulation results to the performance test data based on the preset fit.

[0142] Continuing with the MOSFET device mentioned above as an example, the device model parameters are extracted within the temperature range of -93°C to 27°C, and the implementation of establishing the sub-device model is as follows:

[0143] .model nmos1 nmos

[0144] +level=49 version=3.3 vth0=0.534669

[0145] …

[0146] +kt1=-0.181427

[0147] …

[0148] The device model parameters are extracted in the temperature range of -253℃ to -93℃, and the sub-device model is established as follows:

[0149] .model nmos2 nmos

[0150] +level=49 version=3.3 vth0=0.554029

[0151] …

[0152] kt1=-0.111882

[0153] …

[0154] Among them, nmos1 is the name of the sub-device model corresponding to the temperature range of -93°C to 27°C, nmos2 is the name of the sub-device model corresponding to the temperature range of -253°C to -93°C, vt is the threshold voltage, and kt is the temperature coefficient.

[0155] As an optional embodiment, after the sub-device models corresponding to the various temperature intervals are established, in order to quickly find a suitable sub-device model during simulation, after the corresponding sub-device models are established according to the model parameters, the establishing unit 42 is further used to:

[0156] Set the corresponding identification value for each temperature range;

[0157] A mapping table is generated according to each temperature interval, an identification value corresponding to each temperature interval, and a sub-device model corresponding to each temperature interval; the mapping table stores the corresponding relationship between the temperature interval, the identification value, and the sub-device model.

[0158] For example, the identifiers of various temperature intervals may be the same, such as temperaturemod. However, the identifier values ​​corresponding to the identifiers of different temperature intervals are different; for example, the identifier value of the temperature interval from -93°C to 27°C may be 1; the identifier value of the temperature interval from -253°C to -93°C may be 2. Then, a mapping table is generated for the sub-device model, temperature interval, and identifier value.

[0159] After the sub-device models corresponding to the temperature intervals are established, the merging unit 43 is used to merge the sub-device models to obtain an overall current semiconductor device model.

[0160] Continuing with the above-mentioned MOSFET device as an example, the merged current semiconductor device model is:

[0161] .lib TT

[0162] .subckt nmos dgsb w=20u l=20u

[0163] .if(Tempermod==1)

[0164] M1 dgsb nmos1 w=wl=l

[0165] .elseif(Tempermod == 2)

[0166] M1 dgsb nmos2 w=wl=l

[0167] .endif

[0168] .ends

[0169] .model nmos1 nmos

[0170] +level=49 version=3.3 vth0=0.534669

[0171] …

[0172] +kt1=-0.181427

[0173] …

[0174] .model nmos2 nmos

[0175] +level=49 version=3.3 vth0=0.554029

[0176] …

[0177] kt1=-0.111882

[0178] …

[0179] .endl TT

[0180] Here, the present application combines various sub-device models together in the form of sub-circuits to form a current semiconductor device model; wherein subckt is a sub-circuit.

[0181] When the integrated circuit device needs to be simulated again, the user can determine the current identification value of the temperature range according to the temperature range to be used. For example, if simulation is required within the temperature range of -93°C to 27°C, the current identification value should be 1. The user enters the current identification value into the simulation software.

[0182] After receiving the current identification value, the device model in the simulation software determines the corresponding sub-device model in the current semiconductor device model according to the current identification value.

[0183] As an optional embodiment, the second determining unit 44 is specifically configured to:

[0184] Traverse the mapping table and match the current identification value of the temperature range with each identification value in the mapping table one by one;

[0185] Obtain an identification value that successfully matches the current identification value;

[0186] The corresponding sub-device model is searched in the mapping table based on the successfully matched identification value.

[0187] It should be noted that when simulation needs to be performed in multiple temperature intervals, the user only needs to enter the current identification value corresponding to each temperature interval.

[0188] After the sub-device model is determined, the simulation unit 45 can use the corresponding sub-device model to simulate the integrated circuit device. Here, taking the above-mentioned MOSFET device as an example, the simulation result can be as follows: Figure 3 shown.

[0189] Depend on Figure 3 It can be seen that the performance test data has a high degree of fit with the simulation results, which indicates that the simulation accuracy of the semiconductor device model of the present application can be applied to a wide temperature range and the simulation accuracy can be guaranteed.

[0190] The semiconductor device modeling method and device provided in this application can bring at least the following beneficial effects:

[0191] The present invention provides a modeling method and device for a conductor device model, the method comprising: determining at least one temperature interval according to historical simulation results of an integrated circuit device; the historical simulation results are the results of simulating performance test data using a historical semiconductor device model, and the performance test data are the data required for simulating the integrated circuit device; extracting corresponding device model parameters for different temperature intervals, and establishing corresponding sub-device models according to the model parameters; merging the sub-device models to obtain a current semiconductor device model; when the integrated circuit device needs to be simulated again, receiving the current identification value of the temperature interval, and determining the corresponding sub-device model in the current semiconductor device model according to the current identification value; simulating the integrated circuit device using the corresponding sub-device model; in this way, since different temperature intervals correspond to different sub-device models, when simulating the integrated circuit device, no matter what temperature range it is in, there is a suitable sub-device model to simulate the integrated circuit device, ensuring simulation accuracy and meeting simulation requirements. And when the user needs to simulate the integrated circuit device, he only needs to input the current identification value of the temperature interval to match the suitable sub-device model to simulate it, and the simulation efficiency can also be guaranteed.

[0192] The above description is only a preferred embodiment of the present invention and is not intended to limit the protection scope of the present invention. Any modifications, equivalent substitutions and improvements made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A modeling method for a semiconductor device model, characterized in that: The method comprises: Determine at least one temperature interval according to historical simulation results of the integrated circuit device; the historical simulation results are the results of simulating performance test data using a historical semiconductor device model, and the performance test data are the data required for simulating the integrated circuit device; For different temperature ranges, corresponding device model parameters are extracted, and corresponding sub-device models are established according to the model parameters; Merging the sub-device models to obtain a current semiconductor device model; When the integrated circuit device needs to be simulated again, receiving the current identification value of the at least one temperature interval, and determining a corresponding sub-device model in the current semiconductor device model according to the current identification value; The integrated circuit device is simulated using the corresponding sub-device model; wherein, The extracting corresponding device model parameters for different temperature ranges and establishing corresponding sub-device models according to the model parameters include: For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree; Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained; A corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

2. The method according to claim 1, characterized in that After the corresponding sub-device model is established according to the model parameters, the method further includes: Setting a corresponding identification value for each temperature interval; A mapping table is generated according to each of the temperature intervals, the identification value corresponding to each of the temperature intervals, and the sub-component model corresponding to each of the temperature intervals; the mapping table stores the correspondence between the temperature intervals, the identification value, and the sub-component model.

3. The method according to claim 2, characterized in that Determining a corresponding sub-device model in the semiconductor device model according to the current identification value includes: Traversing the mapping table, matching the current identification value of the temperature interval with each identification value in the mapping table one by one; Obtain the identification value that successfully matches the current identification value; The corresponding sub-device model is searched in the mapping table based on the successfully matched identification value.

4. The method according to claim 1, characterized in that The step of determining at least one temperature interval according to historical simulation results of the integrated circuit device comprises: The at least one temperature interval is determined according to the degree of fit between the historical simulation results and the performance test data.

5. A modeling device for a semiconductor device model, characterized in that: The device comprises: A first determining unit is used to determine at least one temperature interval according to a historical simulation result of the integrated circuit device; the historical simulation result is a result of simulating performance test data using a historical semiconductor device model, and the performance test data is data required when simulating the integrated circuit device; An establishing unit, used for extracting corresponding device model parameters for different temperature intervals, and establishing corresponding sub-device models according to the model parameters; A merging unit, used for merging the sub-device models to obtain a current semiconductor device model; A second determining unit is used to receive a current identification value of the temperature interval when the integrated circuit device needs to be simulated again, and determine a corresponding sub-device model in the semiconductor device model according to the current identification value; A simulation unit, used to simulate the integrated circuit device using the corresponding sub-device model; wherein, The establishing unit is specifically used for: For different temperature intervals, the historical sub-simulation results corresponding to each temperature interval are fitted with the performance test data based on a preset fitting degree; Based on the fitted historical sub-simulation results, a target threshold voltage and a target temperature coefficient are obtained; and a corresponding sub-device model is established according to the target threshold voltage and the target temperature coefficient.

6. The device according to claim 5, characterized in that The establishing unit is further used for: Setting a corresponding identification value for each temperature interval; A mapping table is generated according to each of the temperature intervals, the identification value corresponding to each of the temperature intervals, and the sub-component model corresponding to each of the temperature intervals; the mapping table stores the correspondence between the temperature intervals, the identification value, and the sub-component model.

7. The device according to claim 5, characterized in that The establishing unit is specifically used for: Traversing the mapping table, matching the current identification value of the temperature interval with each identification value in the mapping table one by one; Obtain the identification value that successfully matches the current identification value; The corresponding sub-device model is searched in the mapping table based on the successfully matched identification value.

8. The device according to claim 5, characterized in that The first determining unit is specifically configured to: The at least one temperature interval is determined based on the degree of fit between the historical simulation results and the performance test data; the performance test data is the data required for simulating the integrated circuit device.

Images