Wavelength conversion component, method for manufacturing wavelength conversion component, and light emitting device

Abstract

A wavelength conversion component or a light-emitting device having excellent heat dissipation is realized. The wavelength conversion component comprises a wavelength conversion component formed of ceramic as a main material, a surrounding component formed of ceramic as a main material and surrounding the side surface of the wavelength conversion component, and a heat dissipation component fixed with an upper surface facing the wavelength conversion component and a lower surface of the surrounding component, wherein the lower surface of the wavelength conversion component protrudes toward one side of the heat dissipation component than the lower surface of the surrounding component.

Description

Technical Field

[0001] The present invention relates to a wavelength conversion component, a method for manufacturing the wavelength conversion component, and a light-emitting device having the wavelength conversion component. Background Art

[0002] Patent document 1 discloses an optical component that is integrally formed with a light-transmitting component containing a fluorescent body and a light-reflecting component surrounding the light-transmitting component. The optical component is also disclosed to be formed by integrally sintering a light-transmitting component and a light-reflecting component whose main material is ceramic. In addition, a light-emitting device in which the optical component is disposed on a heat dissipation component is also disclosed.

[0003] Patent Document 1: Japanese Patent Application Laid-Open No. 2019-9406

[0004] However, from the viewpoint of heat dissipation, the optical component described in Patent Document 1 has room for improvement. Summary of the invention

[0005] Means for solving problems

[0006] The wavelength conversion component disclosed in the present specification comprises: a wavelength conversion component, which is formed with ceramic as a main material; a surrounding component, which is formed with ceramic as a main material and surrounds the side surface of the wavelength conversion component; and a heat dissipation component, whose upper surface is fixed opposite to the wavelength conversion component and the lower surface of the surrounding component, and the lower surface of the wavelength conversion component protrudes toward one side of the heat dissipation component more than the lower surface of the surrounding component.

[0007] In addition, the light-emitting device disclosed in this specification comprises: a semiconductor laser element; a base, on which the semiconductor laser element is arranged on the bottom surface and has a frame portion surrounding the semiconductor laser element; and a wavelength conversion component disclosed in this specification arranged above the semiconductor laser element, wherein the heat dissipation component in the wavelength conversion component has a transmission area for transmitting light from the semiconductor laser element, and the light that has passed through the transmission area is incident on the wavelength conversion component in the wavelength conversion component.

[0008] In addition, the manufacturing method of the wavelength conversion component disclosed in this specification has the following steps: preparing a wavelength conversion component and an integral sintered body formed by fixing a surrounding component, both of which have ceramic as the main material, and the wavelength conversion component and the surrounding component have different gas contents; and grinding the lower surface of the integral sintered body so that the wavelength conversion component protrudes more than the surrounding component on the lower surface.

[0009] Effects of the Invention

[0010] According to the invention disclosed in this specification, a wavelength conversion member having excellent heat dissipation can be realized. Also, a light emitting device having excellent heat dissipation can be realized. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 It is a perspective view of the wavelength conversion member of the first embodiment to the third embodiment.

[0012] Figure 2 yes Figure 1 The corresponding top view.

[0013] Figure 3A yes Figure 2 A cross-sectional view of the wavelength conversion component of the first embodiment taken along line IIIA-IIIA.

[0014] Figure 3B This is a cross-sectional view of the composite member and the heat dissipation member included in the wavelength conversion member of the first embodiment before being fixed.

[0015] Figure 4A is with Figure 2 4 is a cross-sectional view of the wavelength conversion component of the second embodiment at the same position as line IIIA-IIIA.

[0016] Figure 4B This is a cross-sectional view of the composite member and the heat dissipation member included in the wavelength conversion member of the second embodiment before being fixed.

[0017] Figure 5A is with Figure 2 4 is a cross-sectional view of the wavelength conversion component of the third embodiment at the same position as that taken along line IIIA-IIIA.

[0018] Figure 5B This is a cross-sectional view of the composite member and the heat dissipation member included in the wavelength conversion member of the third embodiment before being fixed.

[0019] Figure 6 It is a perspective view of a wavelength conversion member according to a fourth embodiment.

[0020] Figure 7 yes Figure 6 The corresponding top view.

[0021] Fig. 8A yes Figure 7 A cross-sectional view of the wavelength conversion component of the fourth embodiment taken along line VIIIA-VIIIA.

[0022] Figure 8B This is a cross-sectional view of a composite member and a heat dissipation member included in a wavelength conversion member according to a fourth embodiment before being fixed.

[0023] Fig. 9 It is a perspective view of a light emitting device according to an embodiment.

[0024] Fig.10 yes Fig. 9 The corresponding top view.

[0025] Fig.11 It is a perspective view for explaining the internal structure of the light emitting device according to the embodiment.

[0026] Fig.12 yes Fig.11 The corresponding top view.

[0027] Fig.13 It is a perspective view for explaining the internal structure of the light emitting device according to the embodiment.

[0028] Fig.14 yes Fig.13 The corresponding top view.

[0029] Fig.15A This is a cross-sectional view of a wavelength conversion member in a light emitting device according to an embodiment.

[0030] Fig. 15B This is an exploded view of components of a wavelength conversion member in a light emitting device according to an embodiment.

[0031] Description of Reference Numerals

[0032] 10, 20, 30, 40 wavelength conversion components

[0033] 11. Wavelength conversion components

[0034] 12 Enclosing parts

[0035] 13 Heat dissipation components

[0036] 14 Adhesive

[0037] 15 Optical film

[0038] 16 Conductive components

[0039] 17 Upper side pressing part

[0040] 18 Lower side pressing part

[0041] 19 Fasteners

[0042] 100 Lighting Device

[0043] 110 base

[0044] 111 Bottom

[0045] 112 Steps

[0046] 113 First step

[0047] 114 Second step

[0048] 120 Semiconductor laser element

[0049] 130 Sub-mount

[0050] 140 Light reflecting parts

[0051] 141 Light reflecting surface

[0052] 150 Wiring

[0053] 160 wavelength conversion components

[0054] 170 Heat sink

[0055] 171 Optical Film

[0056] 172 metal film

[0057] 173 Adhesives

[0058] 180 Composite parts

[0059] 181 wavelength conversion components

[0060] 182 Enclosed Parts

[0061] 183 Optical Film

[0062] 184 Conductive film

[0063] 185 metal film

[0064] 190 Light shielding parts DETAILED DESCRIPTION

[0065] In this specification or claims, when a structure, shape, etc. is expressed by a polygon such as a triangle or a quadrilateral, the polygon is also referred to as a polygon including shapes that have been processed by rounding, chamfering, corner chamfering, rounding, etc. on the corners of the polygon. In addition, shapes that have been processed on the middle part of the side are not limited to corners (edges of sides) and are also referred to as polygons. That is, shapes that have been processed based on a polygon are included in the interpretation of "polygon" recorded in this specification and claims.

[0066] In addition, it is not limited to polygons, and the same applies to words indicating specific shapes such as trapezoids, circles, and concave-convex shapes. In addition, the same applies to the processing of the sides that form the shape. That is, even if the diagonal or middle part of a side is processed, the interpretation of "side" also includes the processed part. In addition, in the case of distinguishing "polygons" and "sides" that are not deliberately processed from the processed shape, "strict" is added, for example, it is recorded as "strict quadrilateral" and the like.

[0067] In addition, in the present specification or claims, when there are multiple elements corresponding to a certain component, when they are expressed separately and distinguished, the beginning of the component may be marked with "first" or "second" to distinguish them. In this case, if the objects or viewpoints to be distinguished between the present specification and the claims are different, the way of marking in the present specification and the way of marking in the claims may be inconsistent.

[0068] Hereinafter, the method for implementing the present invention will be described with reference to the accompanying drawings. The method shown embodies the technical idea of ​​the present invention, but does not limit the present invention. In addition, in the following description, the same name and figure mark represent the same or the same material of the parts, and sometimes the repeated description is appropriately omitted. In addition, sometimes the size, positional relationship, etc. of the parts shown in each figure are exaggerated in order to clearly explain.

[0069] <First embodiment of wavelength conversion member>

[0070] Figure 1 It is a perspective view of the wavelength conversion member 10 according to the first embodiment. Figure 2 1 is a top view of the wavelength conversion component 10 . Figure 3A yes Figure 2 4 is a cross-sectional view of the wavelength conversion component 10 taken along line IIIA-IIIA. Figure 3B This is a cross-sectional view before the composite member and the heat dissipation member 13 are fixed.

[0071] The wavelength conversion member 10 includes a wavelength conversion member 11 , a surrounding member 12 , a heat dissipation member 13 , and an adhesive 14 as components.

[0072] The wavelength conversion component 11 has an upper surface, a lower surface and a side surface. In addition, the wavelength conversion component 11 is formed in the shape of a cube. In addition, the shape may not be limited to a cube. The shape of the upper surface and the lower surface may not be a rectangle. The upper surface and the side surface may not be a plane. The lower surface is preferably a plane.

[0073] The wavelength conversion component 11 converts the light incident on the wavelength conversion component 11 into light of a different wavelength. In addition, inorganic materials can be used as the main material of the wavelength conversion component 11. Inorganic materials are not easily decomposed by light irradiation, so they are preferred. In addition, it is not necessary to be an inorganic material.

[0074] Specifically, the wavelength conversion component 11 can be formed by using ceramic as the main material and containing a phosphor. As a specific main material, for example, aluminum oxide can be cited. In addition, yttrium oxide, zirconium oxide, aluminum nitride, etc. can also be used as the main material. In addition, it is not limited to this, and the wavelength conversion component 11 can also be formed by using glass as the main material or a single crystal of a phosphor.

[0075] Examples of phosphors include yttrium aluminum garnet (YAG) activated by cerium, lutetium aluminum garnet (LAG) activated by cerium, nitrogen-containing calcium aluminosilicate (CaO-Al2O3-SiO2) activated by europium and / or chromium, europium-activated silicate ((Sr, Ba)2SiO4), α-sialon phosphor, β-sialon phosphor, etc. Among them, it is preferred to use a phosphor with good heat resistance, namely, YAG phosphor. In addition, the wavelength conversion component 11 is not limited to containing one type of phosphor, but may contain two or more types of phosphors.

[0076] The surrounding part 12 has an upper surface, a lower surface, an outer side surface, and an inner side surface. In addition, the surrounding part 12 is formed by a shape having a through hole in the central part of the outer shape of a cubic flat plate. The side surface forming the through hole is equivalent to the inner side surface. In addition, the shape of the outer shape is not limited to a cube. In addition, the shape of the through hole depends on the shape of the wavelength conversion part 11, and the shape of the inner side surface depends on the shape of the side surface of the wavelength conversion part 11. The upper surface and the side surface may not be planes. The lower surface is preferably a plane.

[0077] Ceramics can be used as the main material of the surrounding member 12. Specifically, for example, aluminum oxide can be used. In addition, aluminum nitride, silicon nitride, silicon carbide, zirconium oxide, titanium oxide, etc. can also be used. In addition, it is not limited to this, and metals, composites of ceramics and metals, etc. can also be used as the main material.

[0078] In addition, the main material of the surrounding member 12 is preferably a reflective material. As a reflective material, for example, aluminum oxide can be used. In addition, zirconium oxide, titanium oxide, etc. can also be used. In addition, in addition to the main material, an additive having the effect of reducing light transmittance can also be included in a material different from it. As additives, yttrium oxide, zirconium oxide, boron nitride, lutetium oxide, lanthanum oxide, etc. can be listed.

[0079] When the surrounding member 12 is formed to have high reflectivity in this way, the surrounding member 12 can be regarded as a light reflecting member. In addition, having high reflectivity means that the reflectivity with respect to light is 80% or more and 100% or less.

[0080] The heat dissipation component 13 has a lower surface, an upper surface and a side surface. In addition, the heat dissipation component 13 is formed in a cubic flat plate shape. In addition, the shape of the outer shape may not be limited to a cube. The lower surface and the side surface may not be flat. The upper surface is preferably a flat surface.

[0081] For example, sapphire can be used as the main material of the heat dissipation component 13. In addition, quartz, silicon carbide, or glass can also be used. In addition, a light-transmitting material can be used as the main material of the heat dissipation component 13. In this case, the heat dissipation component 13 preferably has a light-transmitting area that transmits light from the upper surface to the lower surface. Here, light transmittance refers to a transmittance of 80% or more for incident light. Specifically, sapphire can be used as a light-transmitting material.

[0082] As the adhesive 14, for example, a metal adhesive such as Au-Sn can be used. In addition, without being limited to this, a resin adhesive or a ceramic adhesive with a curable resin as a main material can be used. In addition, glass can also be used as the adhesive 14, and the surrounding component 12 and the heat dissipation component 13 can be bonded by glass welding.

[0083] Next, an example of a method for producing the wavelength conversion member 10 will be described. The wavelength conversion member 10 can be produced, for example, through the following steps.

[0084] First, a step is performed to fix the wavelength conversion member 11 and the surrounding member 12 so that the side surface of the wavelength conversion member 11 and the inner side surface of the surrounding member 12 are in contact with each other. Here, the wavelength conversion member 11 and the surrounding member 12 are fixed by forming a sintered body in which the wavelength conversion member 11 and the surrounding member 12 are sintered integrally.

[0085] The wavelength conversion member 11 uses a phosphor ceramic having a phosphor portion and a translucent portion. The phosphor portion is composed of a YAG-based phosphor, and the translucent portion contains alumina as a main material. In addition, the surrounding member 12 uses a ceramic containing yttrium oxide as an additive and containing alumina as a main material.

[0086] The wavelength conversion member 11 is formed by sintering, and a powder material of the surrounding member 12 is arranged so as to surround the wavelength conversion member 11 and sintered, thereby forming a sintered body in which the wavelength conversion member 11 and the surrounding member 12 are integrated (hereinafter referred to as an integrated sintered body).

[0087] In addition, the present invention is not limited to this method, and the wavelength conversion member 11 and the surrounding member 12 may be formed by sintering and then sintering the powder material of the wavelength conversion member 11, thereby forming an integral sintered body of the wavelength conversion member 11 and the surrounding member 12. In addition, for example, the sintering may be performed by a spark plasma sintering method (SPS method), a hot press sintering method (HP method), a normal pressure sintering method, a gas pressure sintering method, or the like.

[0088] The integral sintered body is formed in a flat plate shape. The side surface of the wavelength conversion component 11 is surrounded by the inner side surface of the surrounding component 12, but the upper surface and the lower surface of the wavelength conversion component 11 are exposed from the upper surface and the lower surface of the surrounding component 12. Alternatively, the upper surface and / or the lower surface of the wavelength conversion component 11 may also be surrounded by the surrounding component 12. In this case, a process of exposing the upper surface and the lower surface of the wavelength conversion component 11 from the surrounding component 12 is subsequently performed by grinding or the like.

[0089] The thickness from the upper surface to the lower surface of the integral sintered body is adjusted to be 100 μm to 1000 μm. The wavelength conversion member 11 and the surrounding member 12 have the same thickness. If a larger wavelength conversion member 10 is manufactured, the thickness may not be within this range.

[0090] In addition, the wavelength conversion component 11 and the surrounding component 12 are the same ceramic sintered body, but the density of the wavelength conversion component 11 is greater than that of the surrounding component 12. In addition, the average particle size of the main material forming the sintered body of the wavelength conversion component 11 is larger than that of the surrounding component 12. In addition, the gas content of the wavelength conversion component 11 is smaller than that of the surrounding component 12. In addition, the wavelength conversion component 11 is stronger than that of the surrounding component 12. The wavelength conversion component 11 and the surrounding component 12 preferably satisfy at least one of these size relationships, and may also satisfy all of the size relationships.

[0091] For example, by adjusting the temperature, pressure, and heat treatment time during sintering, the wavelength conversion component 11 and the surrounding component 12 can have the above-mentioned difference. For example, by reducing the pressure, the sintered body is more likely to contain voids, and the gas content (here, the porosity of the sintered body) becomes larger. In addition, by sintering at a high temperature and a short time of heat treatment, the particle size becomes smaller and the average particle size becomes smaller.

[0092] The wavelength conversion component 11 is formed so that the gas content is greater than 0% and less than 5%. In addition, the surrounding component 12 is formed so that the gas content is greater than 5% and less than 15%. In addition, the wavelength conversion component 11 has a gas content that is smaller than that of the surrounding component 12 by more than 5%. In addition, the contact surface between the wavelength conversion component 11 and the surrounding component 12, that is, the vicinity of the side surface of the wavelength conversion component 11, has a gas content that is smaller than that of the vicinity of the inner side surface of the surrounding component 12 by more than 5%. In addition, the gas content of the wavelength conversion component 11 and the surrounding component 12 can be measured, for example, by the Archimedean method.

[0093] Next, a step is performed on the lower surface to make the wavelength conversion member 11 protrude more than the surrounding member 12. Here, the wavelength conversion member 11 is made to protrude more than the surrounding member 12 by grinding the lower surface of the integral sintered body.

[0094] The abrasive grains are fixed to a grinding stone for grinding by using a binder, and a sintered body is placed there for grinding. For example, diamonds can be used as abrasive grains and resin can be used as a binder. The wavelength conversion component 11 and the surrounding component 12 have different strengths due to differences in gas content, etc. By grinding them, the grinding methods of the wavelength conversion component 11 and the surrounding component 12 with different strengths are different, and the surrounding component 12 can be ground deeper. In addition, by using a resin in the binder, the abrasive grains are not fixed too strongly, and the grinding methods of the wavelength conversion component 11 and the surrounding component 12 can be effectively different.

[0095] The lower surface of the wavelength conversion member 11 protrudes by 150 nm or more and 500 nm or less than the lower surface of the surrounding member 12 near the inner side surface of the surrounding member 12. Alternatively, the lower surface of the wavelength conversion member 11 protrudes by 150 nm or more and 500 nm or less than the lower surface of the surrounding member 12 in the region from the inner side surface of the surrounding member 12 to the middle of the inner side surface and the outer side surface. In addition, the vicinity of the outer side surface of the surrounding member 12 is most affected by the warping of the member, and therefore is not used as a comparison object for protrusion.

[0096] In this way, a composite member of the wavelength conversion member 11 and the surrounding member 12 can be formed in which the wavelength conversion member 11 protrudes more than the surrounding member 12 on the lower surface (see Figure 3A ).

[0097] Alternatively, the step of fixing the wavelength conversion member 11 and the surrounding member 12 may be replaced by the step of preparing a composite member (integrally sintered body) to which the wavelength conversion member 11 and the surrounding member 12 are fixed. Alternatively, the step of fixing the wavelength conversion member 11 and the surrounding member 12 in such a manner that the wavelength conversion member 11 protrudes more than the surrounding member 12 on the lower surface may be replaced by the step of protruding the wavelength conversion member 11 and the surrounding member 12 after the fixing step.

[0098] In either case, a step of forming a composite member in which the wavelength conversion member 11 and the surrounding member 12 are fixed and the wavelength conversion member 11 protrudes more than the surrounding member 12 on the lower surface is performed.

[0099] In addition, it is also possible to grind not only the lower surface but also the upper surface of the integral sintered body. As with the lower surface, the upper surface can also make the wavelength conversion component 11 protrude more than the surrounding component 12. In addition, the grinding conditions when grinding the upper surface can be different from those when grinding the lower surface, so that the wavelength conversion component 11 does not protrude on the upper surface. For example, a metal bond or a ceramic bond can be used as a bond instead of a resin bond (resin), and the abrasive grains can be fixed for grinding.

[0100] In either case, substantially the entire surface of the side surface of the wavelength conversion member 11 is in contact with the inner side surface of the surrounding member 12, and substantially the entire surface of the inner side surface of the surrounding member 12 is in contact with the side surface of the wavelength conversion member 11. Substantially the entire surface can be set to, for example, a range of 95% or more and less than 100%. The contact of the mutual side surfaces within this range is set as the contact of the main parts of the mutual side surfaces.

[0101] Next, the composite member and the heat sink 13 are fixed so that the lower surfaces of the wavelength conversion member 11 and the surrounding member 12 face the upper surface of the heat sink 13. Here, the composite member and the surrounding member 12 are fixed by providing an adhesive 14 between the lower surface of the surrounding member 12 and the upper surface of the heat sink 13 and bonding them. By fixing the composite member and the heat sink 13, the lower surface of the wavelength conversion member 11 protrudes toward the heat sink 13 side more than the lower surface of the surrounding member 12.

[0102] In addition, from the viewpoint of heat dissipation, the lower surface of the wavelength conversion member 11 and the upper surface of the heat dissipation member 13 are bonded in abutting state. Therefore, it is better to use an adhesive 14 that is not thicker than the length of the wavelength conversion member 11 protruding from the surrounding member 12. In this way, the wavelength conversion member 10 (see Figure 3B ).

[0103] In addition, the lower surface of the wavelength conversion member 11 may not be in contact with the upper surface of the heat dissipation member 13. In this case, the wavelength conversion member 11 may protrude from the surrounding member 12, thereby realizing a wavelength conversion member 10 having excellent heat dissipation properties.

[0104] The wavelength conversion member 10 of the first embodiment can shorten the distance between the wavelength conversion member 11 and the heat dissipation member 13 by making the wavelength conversion member 11 protrude and fixed to the heat dissipation member 13, thereby realizing a wavelength conversion member with excellent heat dissipation properties.

[0105] <Second embodiment of wavelength conversion member>

[0106] Next, a second embodiment of the wavelength conversion member will be described. Figure 1 The top view of the wavelength conversion component 20 is the same as Figure 2 same. Figure 4A is with Figure 2 2 is a cross-sectional view of the wavelength conversion component 20 at the same position as the line IIIA-IIIA. Figure 4B This is a cross-sectional view before the composite member and the heat dissipation member 13 are fixed.

[0107] The wavelength conversion member 20 is different from the wavelength conversion member 10 in that it further includes an optical film 15 and a conductive member 16 .

[0108] The optical film 15 has a specific excellent effect on light. Examples of the effect include optical properties such as reflection, transmission, anti-reflection, and light shielding. The optical properties acted upon by the optical film 15 are not limited thereto.

[0109] In addition, the excellent effect refers to a reflectivity of 80% to 100% in reflection, a transmittance of 90% to 100% in transmission, a reflectivity of 0% to 10% in anti-reflection, and a transmittance of 0% to 5% in light shielding. These reflectivities and transmittances refer to the reflectivities and transmittances in the wavelength of light that is expected to produce an effect through the optical film 15.

[0110] In addition, the optical film 15 may also impart a specific excellent effect only to light in a specific wavelength range. In addition, it may also have excellent effects in a plurality of appropriate optical characteristics. For example, it may also be an optical film 15 that has an excellent reflection effect only to light in a specific wavelength range and has an excellent transmission effect to light in a different wavelength range.

[0111] The optical film 15 is composed of a dielectric multilayer film formed by stacking a plurality of types of dielectric layers in a multilayer film. In addition, it may be a single layer instead of a multilayer film. In addition, it may not be a dielectric layer. As the dielectric layer, silicon oxide, niobium oxide, aluminum oxide, aluminum nitride, titanium oxide, tantalum oxide, etc. can be used. They can be appropriately combined to produce a dielectric multilayer film corresponding to the purpose.

[0112] The conductive component 16 is a metal film provided for electrical connection. For example, Ti / Pt / Au (a metal film stacked in the order of Ti, Pt, and Au) can be used as the metal film. In addition, it is not limited to this, and for example, Ni or Cr can be used instead of Ti, and Ru can be used instead of Pt.

[0113] Next, an example of a method for manufacturing the wavelength conversion member 20 is described. The method for manufacturing the wavelength conversion member 20 is different from the method for manufacturing the wavelength conversion member 10 in that the optical film 15 is provided on the lower surface of the composite member, the conductive member 16 is provided on the lower surface of the surrounding member 12 and the upper surface of the heat dissipation member 13 in the composite member, and the conductive member 16 provided on the surrounding member 12 and the heat dissipation member 13 is electrically connected by the adhesive 14 in the step of fixing the composite member and the heat dissipation member 13.

[0114] The process of providing the optical film 15 on the lower surface of the composite member is performed after forming the composite member in which the wavelength conversion member 11 protrudes more than the surrounding member 12 on the lower surface. The optical film 15 is provided on the lower surface of the wavelength conversion member 11. In addition, the optical film 15 is provided on the lower surface of the surrounding member 12. In addition, it may be provided only on one of the wavelength conversion member 11 or the surrounding member 12.

[0115] In the step of providing the conductive member 16 on the lower surface of the surrounding member 12 and the upper surface of the heat dissipation member 13 in the composite member, after the optical film 15 is formed on the composite member, the conductive member 16 is provided on the lower surface of the surrounding member 12. In addition, the heat dissipation member 13 is prepared and the conductive member 16 is provided on the upper surface thereof. In addition, the heat dissipation member 13 provided with the conductive member 16 may be prepared.

[0116] When the composite member and the heat dissipation member 13 are fixed, the surrounding member 12 and the conductive member 16 of the heat dissipation member 13 are partially or entirely overlapped in a plan view or a bottom view. In the process of fixing the composite member and the heat dissipation member 13, an adhesive 14 is provided in the overlapping region to fix the composite member and the heat dissipation member 13. The adhesive 14 can be made of a conductive material, for example, a metal adhesive.

[0117] The wavelength conversion member 20 of the second embodiment can realize a wavelength conversion member that can impart a specific optical effect by having the optical film 15. In addition, by avoiding providing the conduction member 16 between the wavelength conversion member 11 and the heat dissipation member 13 to achieve conduction, the heat generated in the wavelength conversion member 11 can be appropriately dissipated.

[0118] In addition, the wavelength conversion member 20 is provided with the conductive member 16, but it is also preferable that the members other than the conductive member 16 are sandwiched in contact with the surrounding member 12 and the heat dissipation member 13, rather than being sandwiched in contact with the wavelength conversion member 11 and the heat dissipation member 13. The conductive member 16 can be said to be an example of a sandwiched member sandwiched between the composite member and the heat dissipation member 13. In the wavelength conversion member, the sandwiched member is sandwiched between the opposing surrounding member 12 and the heat dissipation member 13, rather than between the opposing wavelength conversion member 11 and the heat dissipation member 13.

[0119] In addition, the lower surface of the wavelength conversion component 11 abutting against the upper surface of the heat dissipation component 13 also includes the case where the lower surface of the wavelength conversion component 11 abuts against the upper surface of the heat dissipation component 13 via a thin film. Here, the thin film refers to a component with a thickness of 5.0 μm or less. In the wavelength conversion component 20, a thin film optical film 15 is provided, and the lower surface of the wavelength conversion component 11 is bonded to the upper surface of the heat dissipation component 13 in a state of abutting. In addition, the lower surface of the wavelength conversion component 11 may not abut against the upper surface of the heat dissipation component 13.

[0120] In addition, making the wavelength conversion component 11 protrude more than the surrounding component 12 on the lower surface means that, when the optical film 15 is provided only on the surrounding component 12, the wavelength conversion component 11 is protruded more than the optical film 15 provided on the surrounding component 12 on the lower surface. In addition, similar to the first embodiment, the vicinity of the outer side surface of the surrounding component 12 is most affected by the warping of the component, and therefore is not used as a comparison object for protrusion.

[0121] <Third embodiment of wavelength conversion member>

[0122] Next, a third embodiment of the wavelength conversion member will be described. Figure 1 It is a perspective view of a wavelength conversion member 30 according to the third embodiment. Figure 2 3 is a top view of the wavelength conversion component 30 . Figure 5A is with Figure 2 1 is a cross-sectional view of the wavelength conversion component 30 at the same position as the line IIIA-IIIA. Figure 5B This is a cross-sectional view before the composite member and the heat dissipation member 13 are fixed.

[0123] The wavelength conversion member 30 is different from the wavelength conversion member 10 in that the shape of the heat dissipation member 13 is different. In the wavelength conversion member 30, the heat dissipation member 13 has a convex portion on the upper surface side. The convex portion is provided in the center portion.

[0124] Next, an example of a method for manufacturing the wavelength conversion member 30 is described. The method for manufacturing the wavelength conversion member 30 is different from the method for manufacturing the wavelength conversion member 10 in that, in the step of fixing the composite member and the heat dissipation member 13, the lower surface of the wavelength conversion member 11 in the composite member and the upper surface of the convex portion (protruding upper surface) of the heat dissipation member 13 are partially or entirely overlapped and fixed when viewed from above or from above.

[0125] The upper surface of the convex portion of the heat dissipation member 13 is arranged to cover the lower surface of the wavelength conversion member 11. The lower surface of the wavelength conversion member 11 is abutted against the upper surface of the convex portion of the heat dissipation member 13 and fixed.

[0126] Since the heat dissipation member 13 has a convex portion, the wavelength conversion member 30 of the third embodiment can more reliably abut against the heat dissipation member 13 even when warping occurs near the side surface of the heat dissipation member 13, thereby realizing a wavelength conversion member with excellent heat dissipation properties.

[0127] <Fourth Embodiment of Wavelength Converting Member> Next, a fourth embodiment of the wavelength converting member will be described. Figure 6 It is a perspective view of a wavelength conversion member 40 according to the fourth embodiment. Figure 7 4 is a top view of the wavelength conversion component 40. Fig. 8A yes Figure 7 A cross-sectional view of the wavelength conversion component 40 taken along line VIIIA-VIIIA. Figure 8B This is a cross-sectional view before the composite member and the heat dissipation member 13 are fixed.

[0128] The wavelength conversion member 40 is different from the wavelength conversion member 10 in that it has an upper pressing member 17, a lower pressing member 18, and a fastener 19. In addition, the composite member and the heat dissipation member 13 are fixed by the upper pressing member 17, the lower pressing member 18, and the fastener 19 instead of the adhesive 14, which is different from the wavelength conversion member 10.

[0129] The upper pressing member 17 has an upper surface, a lower surface, an outer side surface, and an inner side surface. In addition, the upper pressing member 17 is formed in a shape having a through hole which is circular when viewed from above in the central portion of the outer shape of the flat plate of the cube. The side surface forming the through hole is equivalent to the inner side surface. In addition, the shape of the outer shape may not be limited to a cube. In addition, the shape of the through hole may not be limited to a circle. In addition, the upper pressing member 17 has fastener holes which penetrate from the upper surface to the lower surface at the four corners when viewed from above.

[0130] The lower pressing member 18 has a lower surface, an upper surface, and a side surface. In addition, the lower pressing member 18 is formed in a flat plate shape of a cube. In addition, the shape of the outer shape may not be limited to a cube. In addition, the lower pressing member 18 has fastener holes at four corners when viewed from above. The fastener holes do not penetrate to the lower surface. In addition, they may not penetrate.

[0131] Metal can be used as the main material of the upper pressing member 17 and the lower pressing member 18. In addition, it is preferable to use a material with high thermal conductivity, for example, metal such as copper and aluminum can be used. In addition, the main material does not need to be metal.

[0132] The fastener 19 is, for example, a screw. In this case, the fastener holes of the upper pressing member 17 and the lower pressing member 18 serve as screw holes.

[0133] Next, an example of a method for manufacturing the wavelength conversion member 40 is described. The method for manufacturing the wavelength conversion member 40 is different from the method for manufacturing the wavelength conversion member 10 in that, in the step of fixing the composite member and the heat dissipation member 13, the upper pressing member 17 and the lower pressing member 18 are fixed by fastening with the fastener 19.

[0134] In the step of fixing the composite member and the heat dissipation member 13 , the composite member and the heat dissipation member 13 are fixed by sandwiching them from above and below and fastening them without using an adhesive.

[0135] Since the wavelength conversion member 40 of the fourth embodiment is fixed by a pressing member, it is easy to remove the fastener 19 and replace the composite member or the heat dissipation member 13. In addition, the wavelength conversion member 11 can be brought into contact with the heat dissipation member 13, thereby realizing a wavelength conversion member with excellent heat dissipation.

[0136] Several embodiments of the wavelength conversion component have been described above, but the wavelength conversion component is not strictly limited to these embodiments. For example, the wavelength conversion component 10 of the first embodiment may adopt a part of the structure or process of the second to fourth embodiments. In addition, for example, the wavelength conversion component in one of the first to fourth embodiments may adopt a part or all of the structure or process disclosed in other embodiments. For example, the wavelength conversion component may be based on the wavelength conversion component 40 of the fourth embodiment and is composed of a heat dissipation component having a convex portion as in the third embodiment.

[0137] <Embodiments of Light Emitting Device>

[0138] Next, an embodiment of a light emitting device including a wavelength conversion member will be described by way of example. Fig. 9 It is a perspective view of the light emitting device 100 according to the embodiment. Fig.10 is a top view of the light emitting device 100 . Fig.11 This is a perspective view of a state where the light shielding member 190 is removed from the light emitting device 100 in order to explain the internal structure. Fig.12 is with Fig.11 Top view of the same state. Fig.13 This is a perspective view showing a state in which the wavelength conversion member 160 is further removed from the light emitting device 100 in order to explain the internal structure. Fig.14 is with Fig.13 Top view of the same state. Fig.15A is a cross-sectional view of the wavelength conversion component 160 . Fig. 15B is an exploded view of the wavelength conversion component 160 .

[0139] The light emitting device 100 includes a base 110 , two semiconductor laser elements 120 , two submounts 130 , two light reflecting members 140 , wiring 150 , a wavelength converting member 160 , and a light shielding member 190 as components.

[0140] The base 110 has a concave shape that is concave from the upper surface to the lower surface. In addition, the outer shape is rectangular when viewed from above, and the concave is formed inside the outer shape. The base 110 has an upper surface, a bottom surface 111, a lower surface, an inner side surface, and an outer side surface, and the inner side surface and the bottom surface 111 form a concave space. In addition, in a top view, a rectangular frame is formed by the inner side surface intersecting with the upper surface, and the concave space is surrounded by the frame.

[0141] In addition, the base 110 forms two steps 112 on the inner side of the frame. Here, the step 112 refers to a portion consisting of an upper surface and a side surface intersecting with the upper surface and extending downward. Therefore, the inner side surface of the base 110 includes the side surface intersecting with the upper surface of the base 110 and the side surface of the step.

[0142] Here, the two step portions 112, whichever is closer to the bottom surface 111, are referred to as the first step portion 113 and the second step portion 114. In addition, the base portion 110 may not have two step portions 112. For example, the step portion 112 may be one or more.

[0143] The intersection of the surfaces can be determined from the drawings. For example, the outer surface can be said to intersect with the upper surface and the lower surface. In addition, for example, the upper surface of the first step portion 113, as the side surface extending upward from the upper surface, can be said to intersect with the side surface of the second step portion 114 in a portion and intersect with the side surface intersecting with the upper surface in another portion. In addition, the same is true for the intersection of the edges.

[0144] The base 110 can be formed with ceramic as the main material. For example, as ceramic, aluminum nitride, silicon nitride, aluminum oxide, and silicon carbide can be used. In addition, it is not limited to ceramics, and other materials with insulation properties can also be used as the main material to form. In addition, a plurality of metal films are provided on the base 110. A plurality of metal films are provided on the upper surface of the base 110, and a plurality of metal films are provided inside the concave depression.

[0145] The semiconductor laser element 120 has a rectangular shape when viewed from above. In addition, the side surface intersecting one of the two short sides of the rectangle becomes the emission end face of the light emitted from the semiconductor laser element 120. In addition, the upper surface and the lower surface of the semiconductor laser element 120 are larger in area than the emission end face.

[0146] In addition, the light (laser) emitted from the semiconductor laser element has diffusion, and forms an elliptical far field pattern (hereinafter referred to as "FFP") on a plane parallel to the light emission end face. Here, FFP represents the shape and light intensity distribution of the emitted light at a position far from the emission end face.

[0147] The FFP shape of the light emitted from the semiconductor laser element 120 is an ellipse shape that is longer in the layer direction of the plurality of semiconductor layers including the active layer and in the stacking direction perpendicular thereto. The layer direction is referred to as the horizontal direction of the FFP, and the stacking direction is referred to as the vertical direction of the FFP.

[0148] In addition, based on the light intensity distribution of the FFP of the semiconductor laser element 120, light having an intensity of 1 / e2 or more relative to the peak intensity value is referred to as the main part of light. In addition, the angle equivalent to the half-maximum full width of the light intensity distribution is referred to as the diffusion angle. The diffusion angle in the vertical direction of the FFP is referred to as the vertical diffusion angle, and the diffusion angle in the horizontal direction of the FFP is referred to as the horizontal diffusion angle.

[0149] For example, a semiconductor laser element that emits blue light can be used as the semiconductor laser element 120. Here, blue light refers to light having a peak emission wavelength in the range of 420 nm to 494 nm. The semiconductor laser element 120 may also emit light other than blue light.

[0150] As a semiconductor laser element which emits blue light, a semiconductor laser element including a nitride semiconductor can be mentioned. As a nitride semiconductor, for example, GaN, InGaN, and AlGaN can be used.

[0151] The submount 130 is formed in a cubic shape and has a lower surface, an upper surface, and a side surface. In addition, the width of the submount 130 in the vertical direction is the smallest. In addition, the shape may not be limited to a cubic shape. The submount 130 is formed using, for example, silicon nitride, aluminum nitride, or silicon carbide. In addition, other materials may also be used. In addition, a metal film is provided on the upper surface of the submount 130.

[0152] The light reflecting member 140 has a light reflecting surface 141 that reflects light. A surface having a light reflectivity of 99% or more for the peak wavelength of the irradiated light is provided on the light reflecting surface 141. The light reflectivity here can be set to be 100% or less. In addition, the light reflecting surface 141 can be composed of one or more plane shapes. In addition, it can be composed of a curved surface shape. In addition, it is not limited to these, and the shape of the light reflecting surface 141 can be appropriately designed according to the purpose.

[0153] The main material for forming the outer shape of the light reflecting member 140 can be glass, metal, etc. The main material is preferably a heat-resistant material, for example, glass such as quartz or BK7 (borosilicate glass), metal such as aluminum, or Si. In addition, the light reflecting surface can be formed by using metals such as Ag and Al, and dielectric multilayer films such as Ta2O5 / SiO2, TiO2 / SiO2, and Nb2O5 / SiO2.

[0154] The wiring 150 is used for electrical connection of a specific element (for example, a semiconductor laser element). As the wiring 150, for example, a metal wire can be used.

[0155] The wavelength conversion member 160 includes a wavelength conversion member 181 constituting a composite member 180 , a surrounding member 182 , an optical film 183 , a conductive film 184 , a metal film 185 , a heat dissipation member 170 , an optical film 171 , a metal film 172 , and an adhesive 173 .

[0156] Alumina can be used as a main material of the wavelength conversion member 181. In addition, the wavelength conversion member 181 contains a YAG phosphor. The weight ratio of the phosphor to the alumina is 20 weight %. In addition, the porosity of the wavelength conversion member 181 is 2% or less.

[0157] Alumina was used as the main material of the surrounding member 182. Yttrium oxide was contained as an additive. The weight ratio of the additive to the alumina was 1 weight %.

[0158] The optical film 183 is formed to have a thickness in the range of 0.05 μm or more and 1.0 μm or less. As the optical film 183 , an antireflection film (AR film) is formed on the lower surface of the composite member 180 .

[0159] The conductive film 184 is formed with a thickness in the range of 0.1 μm to 1.0 μm. In addition, the conductive film 184 is provided at a position close to the wavelength conversion component 181. In addition, the conductive film 184 is provided to surround the wavelength conversion component 181. The conductive film 184 is formed using indium tin oxide (ITO). ITO has a high transmittance to visible light and is light-transmissive. From this point of view, it can be regarded as a light-transmissive conductive component.

[0160] The metal film 185 is formed using Ti / Ru / Au. The metal film 185 is formed to have a thickness in the range of 0.3 μm to 3.5 μm. The metal film 185 is connected to the conductive film 184 . The metal film 185 is formed to be thicker than the conductive film 184 .

[0161] Furthermore, since the conductive film 184 is formed thinly, it can also reach the lower surface of the wavelength conversion member 181. That is, the wavelength conversion member 181 can be in contact with the heat dissipation member 170 via the conductive film 184 or a thin film including the optical film 183 and the conductive film 184.

[0162] Sapphire, which is a material with a relatively high refractive index and relatively high strength, is used as the main material of the heat dissipation member 170. In addition, the heat dissipation member 170 has light transmittance. In addition, an optical film 171 and two metal films 172 are provided on the upper surface of the heat dissipation member 170.

[0163] The optical film 171 is formed with a thickness in the range of 2.0 μm to 5.0 μm. In addition, it may not be limited to this range. As the optical film 171, an optical film that reflects light of a specific wavelength and transmits light of other wavelengths is formed on the upper surface of the heat dissipation component 170. As such an optical film, a DBR (Distributed Bragg Reflector) film can be used. The optical film 171 is used to form the convex portion of the heat dissipation component 170.

[0164] The metal film 172 is formed of Ti / Pt / Au. The metal film 172 has a thickness ranging from 0.2 μm to 3.5 μm. The thickness of the metal film 172 is smaller than that of the optical film 171. The thickness of the metal film 172 can be set to 1 / 5 or less of the thickness of the optical film 171.

[0165] A metal adhesive such as Au-Sn is used for the adhesive 173. In addition, the adhesive 173 is provided on the metal film 172. In addition, the adhesive 173 is formed with a thickness in the range of 3.5 μm to 10.0 μm. The thickness of the adhesive 173 is greater than the thickness of the optical film 171. The thickness of the adhesive 173 can be set to be 1.5 times or more of the thickness of the optical film 171.

[0166] In a state where the optical film 171 is located directly below the wavelength conversion member 181, the metal film 185 of the composite member 180 and the metal film 172 of the heat dissipation member 170 are bonded via the adhesive 173. Therefore, the optical film 171 and the wavelength conversion member 181 are not directly bonded. The metal film 172 and the conductive film 184 are electrically connected by the bonding of the heat dissipation member 170 and the composite member 180.

[0167] The conductive film 184 surrounds the wavelength conversion component 181. If the wavelength conversion component 181 is abnormal, such as cracking, cracks or the like are generated in the conductive film 184 in response to the impact, and the electrical connection state changes. By detecting this change (for example, a significant increase in resistance value), the abnormality of the wavelength conversion component 181 can be detected. The conductive film 184 can be said to be a sensor for detecting the abnormality of the wavelength conversion component 181, that is, an abnormality detection element.

[0168] By forming the convex portion of the heat dissipation member 170 with the optical film 171, it is possible to reflect the fluorescence from the wavelength conversion member 181 toward the optical film 171, and to effectively emit the light after the wavelength conversion by the wavelength conversion member 181. In addition, by not directly bonding the optical film 171 but contacting the wavelength conversion member 181, the reflectivity of the optical film 171 is increased.

[0169] Furthermore, by making the convex portion of the heat dissipation member 170 not overlap with the metal film 185 of the composite member 180 in a plan view, the convex portion of the heat dissipation member 170 can be brought into stable contact with the wavelength conversion member 181 .

[0170] The light shielding member 190 is formed in the light emitting device 100 so as to fill the gap between the base 110 and the wavelength conversion member 160. Therefore, the shape of the light shielding member 190 depends on the shape of the gap when the light shielding member 190 is not provided.

[0171] In addition, the light shielding member 190 is formed of a resin having a light shielding property. Here, the light shielding property refers to a property that does not allow light to pass through. In addition to the light shielding property, the light shielding property can also be achieved by using absorption properties, reflection properties, etc. For example, the resin can be formed by containing fillers such as light diffusing materials and / or light absorbing materials.

[0172] As the resin forming the light shielding member 190, epoxy resin, silicone resin, acrylate resin, polyurethane resin, phenolic resin, BT resin, etc. can be cited. In addition, as the light absorbing filler, dark-colored pigments such as carbon black can be cited. In addition, the light shielding member 190 can also be formed of materials other than these.

[0173] Next, a method for manufacturing the light emitting device 100 having these components is described. First, two light reflecting components 140 are arranged on the bottom surface 111 of the base 110. The bottom surface 111 of the base 110 can also be said to be a configuration surface for configuring the components. The two light reflecting components 140 are arranged in point symmetry. In addition, when the two light reflecting components 140 are viewed from above, the upper ends of the light reflecting surfaces 141 are parallel or perpendicular to the inner side surface or the outer side surface of the base 110.

[0174] Next, two submounts 130 are disposed on the bottom surface 111 of the base 110 . The two submounts 130 are disposed on different metal films, respectively, and their lower surfaces are bonded to the bottom surface 111 of the base 110 .

[0175] Next, the semiconductor laser element 120 is arranged on the submount 130. The two semiconductor laser elements 120 are arranged on the upper surfaces of different submounts 130, and the lower surfaces thereof are bonded. In addition, the two semiconductor laser elements 120 are arranged to be point symmetrical. The point of symmetry is arranged to be at the same position as the point of symmetry of the two light reflecting parts 140. In the following description, this point is referred to as a symmetric point.

[0176] When viewed from above, the emission end faces of the two semiconductor laser elements 120 are neither parallel nor perpendicular to the inner side face or the outer side face of the base 110. Therefore, they are neither parallel nor perpendicular to the upper end of the light reflecting surface 141. That is, the semiconductor laser elements 120 are arranged such that the emission end faces are inclined relative to the inner side face and the outer side face of the base 110 or the upper end of the light reflecting surface 141 when viewed from above.

[0177] Alternatively, the light reflecting member 140 may be arranged obliquely instead of the semiconductor laser element 120. That is, the semiconductor laser element 120 may be arranged parallel or perpendicular to the inner or outer side surface of the base 110, and the light reflecting member 140 may be arranged non-parallel or non-perpendicularly.

[0178] The two semiconductor laser elements 120 emit light toward different light reflecting members 140. In other words, the light reflecting member 140 corresponding to one semiconductor laser element 120 is irradiated with light from the semiconductor laser element 120. The semiconductor laser element 120 is arranged so that at least a major portion of the light is irradiated toward the light reflecting surface 141.

[0179] Between the corresponding semiconductor laser element 120 and the light reflecting member 140, the semiconductor laser element 120 is located farther from the symmetric point than the light reflecting member 140. Therefore, the light emitted from the semiconductor laser element 120 travels in a direction close to the symmetric point.

[0180] Submount 130 on which semiconductor laser element 120 is mounted functions as a heat sink for dissipating heat generated by semiconductor laser element 120 in light emitting device 100. Submount 130 may be formed of a material having a higher thermal conductivity than semiconductor laser element 120 in order to function as a heat sink.

[0181] In addition, submount 130 can play a role in adjusting the light emission position of the semiconductor laser element in light emitting device 100. For example, when it is desired that light passing through the optical axis is parallel to bottom surface 111 and irradiated to a predetermined position of light reflecting surface 141, the submount is used as an adjustment member.

[0182] Next, the wiring 150 is bonded to electrically connect the components arranged on the bottom surface 111. The wiring 150 is arranged to electrically connect the metal film provided on the bottom surface 111 and the components. The wiring 150 connects the two semiconductor laser elements in series.

[0183] Next, the wavelength conversion member 160 is arranged on the upper surface of the base 110. The lower surface of the wavelength conversion member 160 is arranged and bonded to the upper surface of the step portion 112 of the base 110. More specifically, it is bonded to the upper surface of the first step portion 113. The metal film of the wavelength conversion member 160 provided in the peripheral area of ​​the lower surface of the heat dissipation member 170 and the metal film provided on the upper surface of the first step portion 113 are bonded and fixed via Au-Sn or the like.

[0184] The wavelength conversion component 160 is bonded to the base 110, thereby forming a closed space in which the semiconductor laser element 120 is arranged. In the light emitting device 100, the wavelength conversion component 160 or the heat dissipation component 170 can play a role as a cover component. In addition, the closed space is formed in an airtight sealed state. By airtight sealing, it is possible to suppress the collection of organic matter and the like on the light emission end face of the semiconductor laser element 120.

[0185] Furthermore, light emitted by the two semiconductor laser elements 120 , particularly a major portion of light, is reflected by the light reflecting surfaces 141 of the corresponding light reflecting members 140 , passes through the heat dissipating member 170 disposed above, and enters the lower surface of the wavelength converting member 181 .

[0186] Part or all of the light incident on the wavelength conversion member 181 is converted into light of a different wavelength by the wavelength conversion member 181. The laser light or the light after the wavelength conversion is emitted from the upper surface of the wavelength conversion member 181 to the outside of the light emitting device 100. In addition, the light after the wavelength conversion is reflected by the optical film 171 and emitted to the outside of the light emitting device 100. That is, the upper surface of the wavelength conversion member 181 becomes the light extraction surface of the light emitting device 100.

[0187] The light passing through the optical axis emitted from the two semiconductor laser elements does not pass through the center of the lower surface of the wavelength conversion member 181. The light passing through the optical axis emitted from the respective semiconductor laser elements does not overlap on the incident surface (lower surface) of the wavelength conversion member 181.

[0188] Next, the wiring 150 for electrically connecting the abnormality detection element is bonded. The wiring 150 is bonded to the metal film of the second step portion 114 provided on the base 110 and the metal film 172 of the heat dissipation member 170 .

[0189] Next, the light shielding member 190 is provided inside the frame formed by the upper surface of the base 110. The light shielding member 190 is formed by pouring resin and curing it by heat. In addition, the resin does not intrude into the closed space where the semiconductor laser element 120 is arranged.

[0190] In addition, the light shielding member 190 covers the wiring 150 disposed on the second step portion 114. That is, when the light shielding member 190 is formed, the wiring 150 is not exposed in the light emitting device 100. Thus, the wiring 150 can be protected from being attached by water drops or the like. In addition, it is not necessary to cover it.

[0191] An exemplary embodiment of the light-emitting device is described above, but the light-emitting device having the wavelength conversion component is not limited thereto. A light-emitting device having components not disclosed in the embodiment may also be used. For example, a light-emitting device having a protective element disposed on the bottom surface 111 of the base 110 may also be used. In addition, for example, a light-emitting device having a temperature measuring element disposed on the bottom surface 111 of the base 110 may also be used.

[0192] The above-mentioned invention having technical features is disclosed through the specification, but the scope of application of the present invention is not limited to the structure of the embodiment described in the specification. For example, the present invention can also be applied to a wavelength conversion component or a light-emitting device having components not disclosed in the embodiment, and the fact that the structure is partially different from the disclosed structure cannot be the basis for not being able to apply the present invention.

[0193] This means that the present invention does not necessarily have to fully possess all the constituent elements disclosed in the embodiments to be applicable. For example, if a part of the constituent elements of the light-emitting device disclosed in the embodiments is not recorded in the claims, the constituent elements are not limited to those disclosed in the embodiments, but substitution, omission, deformation of shape, change of materials, etc. are allowed based on the freedom of design of those skilled in the art, and on this basis, the invention recorded in the claims is required to be applied.

[0194] Industrial Applicability

[0195] The light emitting device described in each embodiment can be used as a light source such as a vehicle headlight, lighting, a projector, a head mounted display, or a backlight of other displays.

Claims

1. A wavelength conversion component, comprising: A wavelength conversion component formed with ceramic as a main material; a surrounding member formed of ceramic as a main material and surrounding a side surface of the wavelength conversion member; and a heat dissipation component, the upper surface of which is fixed to face the wavelength conversion component and the lower surface of the surrounding component, The lower surface of the wavelength conversion component protrudes toward one side of the heat dissipation component more than the lower surface of the surrounding component. A clamping member is provided, the clamping member being sandwiched between the opposing surrounding member and the heat dissipation member, The interposing member includes a first interposing member provided on a lower surface of the surrounding member, The clamping member includes a second clamping member disposed on an upper surface of the heat dissipation member, The first interposing member and the second interposing member are bonded to each other via an adhesive. The first clamping member and the second clamping member are conductive members, The adhesive is an adhesive containing a conductive material, The first intervening member and the second intervening member are electrically connected by bonding via the adhesive.

2. The wavelength conversion component according to claim 1, characterized in that: The wavelength conversion component is in contact with the heat dissipation component.

3. The wavelength conversion component according to claim 2, characterized in that: The wavelength conversion component has an anti-reflection film on the lower surface, The wavelength conversion member and the heat dissipation member are in contact with each other via the anti-reflection film.

4. The wavelength conversion component according to claim 2 or 3, characterized in that: The heat dissipation component has a convex portion on the upper surface, The lower surface of the wavelength conversion member contacts the upper surface of the convex portion of the heat dissipation member.

5. A wavelength conversion component, comprising: A wavelength conversion component formed with ceramic as a main material; a surrounding member formed of ceramic as a main material and surrounding a side surface of the wavelength conversion member; and a heat dissipation component, the upper surface of which is fixed to face the wavelength conversion component and the lower surface of the surrounding component, The lower surface of the wavelength conversion component protrudes toward one side of the heat dissipation component more than the lower surface of the surrounding component. In the heat dissipation member, a recessed portion surrounding a protruding portion of the wavelength conversion member protruding toward one side of the heat dissipation member from a lower surface of the surrounding member is not formed.

6. The wavelength conversion component according to claim 5, characterized in that: The heat dissipation member is formed so that the upper surface is a flat surface, or has a convex portion provided at the center portion of the upper surface side.

7. A light emitting device, comprising: Semiconductor laser components; a base having the semiconductor laser element disposed on a bottom surface thereof and having a frame surrounding the semiconductor laser element; and The wavelength conversion member according to any one of claims 1 to 6, arranged above the semiconductor laser element, The heat dissipation member in the wavelength conversion member has a transmission region through which the light from the semiconductor laser element transmits, and the light transmitted through the transmission region enters the wavelength conversion member in the wavelength conversion member.

8. A method for manufacturing a wavelength conversion component, comprising the following steps: preparing an integral sintered body formed by fixing a wavelength conversion member and a surrounding member, both of which are made mainly of ceramics, wherein the wavelength conversion member and the surrounding member have different gas contents; and The lower surface of the integral sintered body is ground so that the wavelength conversion member protrudes beyond the surrounding member on the lower surface.

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