High temperature sensor with asymmetric metal alloy film structure and manufacturing method

Abstract

The present invention provides a high temperature sensor with an asymmetric metal alloy thin film structure and a manufacturing method thereof, wherein the sensor comprises a platinum metal sensor body, and the platinum metal sensor body is coated with an asymmetric metal alloy thin film structure, wherein the asymmetric metal alloy thin film structure comprises a thin film layer and a thick film layer, wherein the area covered by the thin film layer is half of the area of ​​the platinum metal sensor body, and the area covered by the thick film layer is the other half of the area of ​​the platinum metal sensor body, and the thickness of the thin film layer is 100-300nm, and the thickness of the thick film layer is 50-100um. The method of the present invention is applied to the above-mentioned sensor. The application of the present invention can enhance the high temperature resistance of the platinum metal high temperature sensor and reduce its embrittlement effect when working at high temperature.

Description

Technical Field

[0001] The present invention relates to the field of sensor technology, and in particular to a high-temperature sensor with an asymmetric metal alloy thin film structure and a method applied to the high-temperature sensor. Background Art

[0002] Commonly used platinum resistance sensors have the characteristics of high temperature measurement accuracy, good stability, and reliable performance. However, when measuring temperatures above 500°C, platinum resistance is easily degraded and becomes brittle at high temperatures for a long time. Therefore, it is difficult to use it reliably for a long time at high temperatures. From the perspective of high-temperature alloy materials, iron, nickel, and cobalt are based, and can work for a long time at high temperatures above 600°C and under certain stresses. They have excellent high-temperature strength, good oxidation resistance and thermal corrosion resistance, good fatigue performance, fracture toughness and other comprehensive properties. In addition to matrix elements (iron, cobalt, and nickel), if refractory elements such as Ta, Re, W, and Mo are added to high-temperature alloys, their high-temperature stability can be greatly enhanced.

[0003] The basic working principle of platinum resistance temperature sensor is that its resistance changes accordingly with the change of external temperature. The change of external temperature is obtained by measuring the size of resistance. However, when this type of sensor is at a temperature above 500 degrees, it is easy to become brittle and cannot be used for a long time. Therefore, it is necessary to use special alloy materials to strengthen and stabilize this type of sensor. However, the thermal expansion and contraction characteristics of platinum resistance need to be considered while strengthening and stabilizing. Existing products are difficult to solve the above problems. Summary of the invention

[0004] The main purpose of the present invention is to provide a high temperature sensor with an asymmetric metal alloy thin film structure which can enhance the high temperature resistance of the platinum metal high temperature sensor and reduce the embrittlement effect of the sensor when working at high temperature.

[0005] Another object of the present invention is to provide a method for manufacturing the high temperature sensor having the asymmetric metal alloy thin film structure.

[0006] In order to achieve the above main purpose, the present invention provides a high temperature sensor with an asymmetric metal alloy thin film structure, including a platinum metal sensor body, the platinum metal sensor body is coated with an asymmetric metal alloy thin film structure, the asymmetric metal alloy thin film structure has a thin film layer and a thick film layer, the area covered by the thin film layer is half of the area of ​​the platinum metal sensor body, and the area covered by the thick film layer is the other half of the area of ​​the platinum metal sensor body; the thickness of the thin film layer is 100-300nm, and the thickness of the thick film layer is 50-100um.

[0007] In a further embodiment, the asymmetric metal alloy film structure is an asymmetric nickel-manganese alloy film structure, the film layer is a nickel-manganese alloy film with a thickness of 100-300 nm, and the thick film layer is a nickel-manganese alloy film with a thickness of 50-100 um.

[0008] In a further embodiment, the thickness of the thin film layer is 200 nm.

[0009] In a further embodiment, the thickness of the thick film layer is 100 um.

[0010] In a further solution, the thin film layer and the thick film layer are not located at the same horizontal height and form an asymmetric position structure. The thin film layer is arranged close to the terminal of the platinum metal sensor body, and the thick film layer is arranged away from the terminal of the platinum metal sensor body relative to the thin film layer.

[0011] In a further embodiment, the wiring terminals of the platinum metal sensor body are coated with a thin film insulating layer.

[0012] In a further embodiment, the thin film insulating layer is a nickel-manganese alloy thin film with a thickness of 100-300 nm.

[0013] In a further embodiment, the thin film insulating layer is a nickel-manganese alloy thin film with a thickness of 200 nm.

[0014] In a further embodiment, the connection terminal of the platinum metal sensor body is a lead electrode.

[0015] In order to achieve the above-mentioned another object, the present invention provides a method for manufacturing a high-temperature sensor with an asymmetric metal alloy thin film structure. The high-temperature sensor adopts the above-mentioned high-temperature sensor, and the method comprises the following steps: using a magnetron sputtering coating process to coat a platinum metal sensor using a nickel-manganese alloy target, and controlling the coating thickness by controlling the coating time; in the coating process, first, coating a thin film layer on a first area of ​​the platinum metal sensor body, the coating thickness is 100-300nm, and using photoresist to block the second area of ​​the platinum metal sensor body. After the coating is completed, using an organic solvent to peel off the photoresist; then, using photoresist to block the plated thin film layer, coating a thick film layer on the second area of ​​the platinum metal sensor body, the coating thickness is 50-100um, and the corresponding areas will form different film layer thicknesses, thereby forming an asymmetric metal alloy thin film structure.

[0016] In a further solution, after the coating is completed on the second area of ​​the platinum metal sensor body, the photoresist is stripped using an organic solvent.

[0017] In a further solution, during the coating process, a plasma magnetron sputtering coating process or an evaporation coating process is used for coating.

[0018] It can be seen that the present invention uses a platinum resistance sensor as a temperature sensor, and uses an asymmetric nickel-manganese alloy coating structure to enhance the high temperature resistance of the platinum resistance high temperature sensor, protect the platinum metal resistance sensor, and reduce its embrittlement effect when working at high temperatures, while preventing the thermal expansion and contraction effect of the platinum metal from causing the fission of the film protective layer. Among them, nickel metal can effectively enhance the stress strength of the platinum resistance at high temperatures, and doping with manganese metal can effectively enhance the high temperature stability of the platinum resistance sensor.

[0019] Therefore, the present invention utilizes nickel-manganese metal alloy to enhance the high-temperature stress strength and high-temperature stability of platinum metal; utilizes an asymmetric coating structure to reduce the influence of the coating alloy on the measurement parameters of the Perot resistance sensor; this type of sensor can work for a long time in a high-temperature environment of more than 500 degrees while maintaining good measurement stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a structural schematic diagram of an embodiment of a high temperature sensor with an asymmetric metal alloy film structure according to the present invention.

[0021] The present invention is further described below in conjunction with the accompanying drawings and embodiments. DETAILED DESCRIPTION

[0022] In order to make the purpose, technical solution and advantages of the embodiment of the present invention clearer, the technical solution of the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0023] An embodiment of a high temperature sensor having an asymmetric metal alloy thin film structure:

[0024] See also Figure 1 A high temperature sensor with an asymmetric metal alloy thin film structure of the present invention comprises a platinum metal sensor body 10, on which an asymmetric metal alloy thin film structure is coated, the asymmetric metal alloy thin film structure comprising a thin film layer 20 and a thick film layer 30, the area covered by the thin film layer 20 is half of the area of ​​the platinum metal sensor body 10, and the area covered by the thick film layer 30 is the other half of the area of ​​the platinum metal sensor body 10.

[0025] In this embodiment, the thickness of the thin film layer 20 is 100-300 nm, and the thickness of the thick film layer 30 is 50-100 um.

[0026] The asymmetric metal alloy film structure is an asymmetric nickel-manganese alloy film structure, the film layer 20 is a nickel-manganese alloy film with a thickness of 100-300 nm, and the thick film layer 30 is a nickel-manganese alloy film with a thickness of 50-100 um.

[0027] Preferably, the thickness of the thin film layer 20 is 200 nm.

[0028] Preferably, the thickness of the thick film layer 30 is 100 um.

[0029] In this embodiment, the thin film layer 20 and the thick film layer 30 are not located at the same horizontal height and form an asymmetric position structure. The thin film layer 20 is arranged close to the wiring terminal of the platinum metal sensor body 10, and the thick film layer 30 is arranged away from the wiring terminal of the platinum metal sensor body 10 relative to the thin film layer 20.

[0030] In this embodiment, the terminal of the platinum metal sensor body 10 is coated with a thin film insulating layer.

[0031] The thin film insulating layer is a nickel-manganese alloy thin film with a thickness of 100-300nm.

[0032] Preferably, the thin film insulating layer is a nickel-manganese alloy thin film with a thickness of 200 nm.

[0033] In this embodiment, the connection terminal of the platinum metal sensor body 10 is the lead electrode 40 , the platinum metal sensor body 10 is electrically connected to the lead electrode 40 , and the thin film insulating layer covers the connection end between the lead electrode 40 and the platinum metal sensor body 10 .

[0034] The platinum metal sensor of this embodiment is a platinum resistance temperature sensor.

[0035] Preferably, the platinum resistor of this embodiment is a ceramic thin film platinum resistor. The thin film protective layer can improve the temperature resistance and stability of the temperature sensor, and can further improve the performance of the temperature sensor and the accuracy of the test temperature of the temperature sensor.

[0036] The present invention proposes a platinum resistance sensor reinforcement structure reinforced by an asymmetric nickel-manganese metal alloy thin film structure. Taking a platinum resistance temperature sensor as an example, the platinum resistance temperature sensor is suitable for semicircular and square structures, and half of the area of ​​the platinum resistance sensor body is coated with a nickel-manganese alloy thin film of about 200nm to form a thin film layer 20, and the other half of the area is coated with a nickel-manganese alloy thin film of about 100um to form a thick film layer 30, thereby forming an asymmetric nickel-manganese metal alloy thin film structure.

[0037] The thinner film structure protects the structure of the platinum resistor material and avoids affecting the thermal expansion and contraction of the platinum resistor. The thicker film is used to support and tighten the entire platinum resistor material and reduce the high-temperature embrittlement of the platinum resistor.

[0038] The wiring terminals of the platinum resistor sensor body are also coated with a nickel-manganese alloy film with a thickness of about 200nm, which can protect the structure of the platinum resistor material while avoiding affecting the conductive properties of the electrode.

[0039] Furthermore, the nickel-manganese alloy thin film layer 20 and the nickel-manganese alloy thick film layer 30 are not located at the same level. The nickel-manganese alloy thin film layer 20 is closer to the lead electrode 40 of the platinum resistor sensor body, which can further protect the structure of the platinum resistor material and further avoid affecting the conductive properties of the electrode.

[0040] In practical applications, for cylindrical and rectangular sensors, the asymmetric thin film nickel-manganese coating structure is mainly used to protect and tighten the platinum resistor while preventing the thermal barrier and shrinkage that affect the platinum resistor material. The electrode part uses a thinner material to protect the platinum resistor material without affecting the characteristics of the electrode.

[0041] Therefore, the present invention strengthens and stabilizes this type of sensor through a nickel-manganese alloy film to enhance its durability in high temperature resistance; the asymmetric film structure design of the platinum resistor can protect the platinum resistor material, enhance its strength characteristics while reducing the influence of thermal expansion and contraction; the nickel-manganese alloy film coating design of the electrode part can reduce the influence on the electrode.

[0042] Embodiment of a method for manufacturing a high temperature sensor having an asymmetric metal alloy thin film structure:

[0043] The present invention provides a method for manufacturing a high temperature sensor having an asymmetric metal alloy thin film structure, wherein the high temperature sensor adopts the above-mentioned high temperature sensor, and the method comprises the following steps:

[0044] The magnetron sputtering coating process is used to coat platinum metal using a nickel-manganese alloy target, and the coating thickness is controlled by controlling the coating time.

[0045] During the coating process, first, a thin film layer 20 is coated on a first area of ​​the platinum metal sensor body 10 with a coating thickness of 100-300 nm, and a photoresist is used to block a second area of ​​the platinum metal sensor body 10. After the coating is completed, the photoresist is stripped off using an organic solvent.

[0046] Then, use photoresist to cover the plated thin film layer 20, and coat the thick film layer 30 on the second area of ​​the platinum metal sensor body 10, with a coating thickness of 50-100um. The corresponding areas will form different film thicknesses, thereby forming an asymmetric metal alloy thin film structure.

[0047] Furthermore, after the coating is completed on the second area of ​​the platinum metal sensor body, the photoresist is stripped using an organic solvent.

[0048] Furthermore, during the coating process, a plasma magnetron sputtering coating process or an evaporation coating process is used for coating.

[0049] Furthermore, the first area of ​​the platinum metal sensor body 10 is half of the area of ​​the body, and the second area of ​​the platinum metal sensor body 10 is the other half of the area of ​​the body.

[0050] In practical applications, the coating process of the present invention adopts a plasma magnetron sputtering process or an evaporation process for coating. In the coating process, a thin film layer is first coated, and its thickness is controlled to be about 200nm. The part of the platinum metal sensor that does not need to be coated is shielded with a photoresist, which plays an important role in maintaining the thermal expansion and contraction characteristics of the platinum sensor. Then, the photoresist is stripped off with an organic solvent, and the thin film is shielded with the photoresist, and then a thick film is coated. The thickness of this part is controlled to be about 100um, which plays an important supporting role in the strength of the sensor. Finally, the photoresist is stripped off with an organic solvent to form a high-temperature sensor with an asymmetric metal alloy film structure of the present invention.

[0051] It can be seen that the present invention uses a platinum resistance sensor as a temperature sensor, and uses an asymmetric nickel-manganese alloy coating structure to enhance the high temperature resistance of the platinum resistance high temperature sensor, protect the platinum metal resistance sensor, and reduce its embrittlement effect when working at high temperatures, while preventing the thermal expansion and contraction effect of the platinum metal from causing the fission of the film protective layer. Among them, nickel metal can effectively enhance the stress strength of the platinum resistance at high temperatures, and doping with manganese metal can effectively enhance the high temperature stability of the platinum resistance sensor.

[0052] Therefore, the present invention utilizes nickel-manganese metal alloy to enhance the high-temperature stress strength and high-temperature stability of platinum metal; utilizes an asymmetric coating structure to reduce the influence of the coating alloy on the measurement parameters of the Perot resistance sensor; this type of sensor can work for a long time in a high-temperature environment of more than 500 degrees while maintaining good measurement stability.

[0053] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples described in this specification and the features of different embodiments or examples, unless they are contradictory.

[0054] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0055] It should be noted that the above are only preferred embodiments of the present invention, but the design concept of the invention is not limited thereto, and any non-substantial modifications made to the present invention using this concept also fall within the protection scope of the present invention.

Claims

1. A high temperature sensor having an asymmetric metal alloy thin film structure, characterized in that: include: A platinum metal sensor body, wherein the platinum metal sensor body is coated with an asymmetric metal alloy thin film structure, wherein the asymmetric metal alloy thin film structure comprises a thin film layer and a thick film layer, wherein the area covered by the thin film layer is half of the area of ​​the platinum metal sensor body, and the area covered by the thick film layer is the other half of the area of ​​the platinum metal sensor body; The thickness of the thin film layer is 100-300nm, and the thickness of the thick film layer is 50-100um; The asymmetric metal alloy film structure is an asymmetric nickel-manganese alloy film structure, the thin film layer is a nickel-manganese alloy film with a thickness of 100-300 nm, and the thick film layer is a nickel-manganese alloy film with a thickness of 50-100 um; The thickness of the thin film layer is 200nm, and the thickness of the thick film layer is 100um; The thin film layer and the thick film layer are not located at the same level and form an asymmetric position structure. The thin film layer is arranged close to the terminal of the platinum metal sensor body, and the thick film layer is arranged away from the terminal of the platinum metal sensor body relative to the thin film layer.

2. The high temperature sensor with an asymmetric metal alloy thin film structure according to claim 1, characterized in that: The wiring terminals of the platinum metal sensor body are coated with a thin film insulating layer.

3. The high temperature sensor with an asymmetric metal alloy thin film structure according to claim 2, characterized in that: The thin film insulating layer is a nickel-manganese alloy thin film with a thickness of 100-300nm.

4. The high temperature sensor with an asymmetric metal alloy thin film structure according to claim 2, characterized in that: The thin film insulating layer is a nickel-manganese alloy thin film with a thickness of 200 nm.

5. The high temperature sensor with an asymmetric metal alloy thin film structure according to any one of claims 2 to 4, characterized in that: The connection terminal of the platinum metal sensor body is a lead electrode.

6. A method for manufacturing a high temperature sensor having an asymmetric metal alloy thin film structure, characterized in that: The high temperature sensor is a high temperature sensor according to any one of claims 1 to 5, and the method comprises the following steps: The magnetron sputtering coating process is used to coat the platinum metal sensor using a nickel-manganese alloy target material and the coating thickness is controlled by controlling the coating time; In the coating process, first, a thin film layer is coated on the first area of ​​the platinum metal sensor body, and the coating thickness is 100-300nm. A photoresist is used to block the second area of ​​the platinum metal sensor body. After the coating is completed, the photoresist is stripped off using an organic solvent. Then, use photoresist to block the plated thin film layer, and coat a thick film layer on the second area of ​​the platinum metal sensor body. The coating thickness is 50-100um. The corresponding areas will form different film thicknesses, thus forming an asymmetric metal alloy thin film structure.

7. The method according to claim 6, characterized in that: After the coating is completed on the second area of ​​the platinum metal sensor body, the photoresist is stripped off using an organic solvent.

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