SiC edge ring

Abstract

The present invention relates to an edge ring of one of semiconductor manufacturing components used in a semiconductor manufacturing process. The SiC edge ring of the present invention comprises: a first deposition portion, which comprises SiC having a plasma damaged portion and an undamaged portion; and a second deposition portion, which comprises SiC formed on the first deposition portion, wherein a boundary between the damaged portion of the first deposition portion and the second deposition portion comprises a non-flat surface.

Description

Technical Field

[0001] The present invention relates to an edge ring, one of semiconductor manufacturing components used in a semiconductor manufacturing process, and more particularly, to a SiC edge ring that regenerates a damaged edge ring of a dry etching device by using plasma so that the edge ring can be used again in a semiconductor manufacturing process. Background Art

[0002] Generally, the plasma processing technology used in the semiconductor manufacturing process is a dry etching process, which is a method of etching the target using gas. The process is to inject etching gas into the reaction vessel and ionize it, and then accelerate it to the surface of the wafer to physically and chemically remove the surface of the wafer. This method is easy to adjust etching, has high productivity, and can form fine patterns of tens of nanometers (nm), so it has been widely used.

[0003] One of the variables to be considered for uniform etching in plasma processing technology is the application of uniform high frequency to the surface of the object. The application of uniform high frequency is a necessary factor to form a uniform energy distribution over the entire wafer surface in the actual etching process. This cannot be achieved simply by adjusting the output of the high frequency, and is greatly affected by the shape of the worktable and anode as high frequency electrodes, and the edge ring that essentially serves to fix the wafer.

[0004] The edge ring is used to prevent the plasma from spreading in the reaction chamber of the plasma processing device under the harsh conditions of the presence of plasma, and to limit the plasma around the wafer undergoing etching. Therefore, the edge ring is always exposed to the plasma, and its surface is etched by the positive ions in the plasma. Therefore, if the edge ring is not replaced within a proper period, the amount of etching byproducts caused by the etching of the edge ring in the reaction chamber increases, which will reduce the accuracy of the etching process and deteriorate the quality of the product. Therefore, it is necessary to regularly replace the edge ring products damaged by etching, and all the replaced edge rings are discarded as they are. Summary of the invention

[0005] Technical issues to be solved

[0006] According to one aspect of the present invention, the purpose of the present invention is to solve the above-mentioned problems, for example, to contribute to environmental protection by reducing industrial waste generated by discarded semiconductor manufacturing components (such as replaced edge rings), and to provide an edge ring as a recycled semiconductor manufacturing component, which can reduce the production cost of the final semiconductor product.

[0007] Furthermore, according to an aspect of the present invention, there is provided a method for minimizing costs consumed in a process of regenerating an edge ring as a semiconductor manufacturing component by omitting or simplifying unnecessary processes.

[0008] In addition, according to one aspect of the present invention, in the deposition process of forming the edge ring, multiple SiC layers are stacked using an effective method, and a SiC edge ring stacked with multiple layers is provided, and even at the boundaries between the layers to prevent the continuous growth of abnormal tissues, the quality is uniform and there is no peeling phenomenon, and there is no need to worry about the generation of pores or cracks. However, the problem to be solved by the present invention is not limited to the above-mentioned problems, and other problems not mentioned can be clearly understood by ordinary technicians in this field through the following description.

[0009] Technical means of solving problems

[0010] The SiC edge ring of the present invention comprises: a first deposition portion, which comprises SiC having a plasma damaged portion and an undamaged portion; and a second deposition portion, which comprises SiC formed on the first deposition portion, wherein a boundary between the damaged portion of the first deposition portion and the second deposition portion comprises a non-flat surface.

[0011] According to an embodiment of the present invention, the non-planar surface may be formed by plasma etching.

[0012] According to an embodiment of the present invention, in the uneven surface, a height difference between a highest point and a lowest point of the uneven surface formed by portions having the same height before being exposed to plasma may be 0.5 mm to 3 mm.

[0013] According to an embodiment of the present invention, the surface roughness of the non-planar surface may be 0.1 μm to 2.5 μm.

[0014] According to an embodiment of the present invention, the transmittances of the first deposition portion and the second deposition portion may be different.

[0015] According to an embodiment of the present invention, the first deposition part may include at least any one selected from the group consisting of graphite, reaction sintered SiC, pressureless sintered SiC, hot pressed SiC, recrystallized SiC, chemical vapor deposited SiC, TaC and YaC.

[0016] According to an embodiment of the present invention, a difference in transmittance between the first deposition portion and the second deposition portion may be greater than a difference in transmittance between a plurality of deposited layers in the second deposition portion.

[0017] According to an embodiment of the present invention, the first deposition part includes a plurality of deposited layers, and transmittance may gradually change at boundaries between the plurality of deposited layers of the first deposition part.

[0018] According to an embodiment of the present invention, a third deposition portion is further included which is formed on the second deposition portion, and a boundary surface between the second deposition portion and the third deposition portion may include a non-flat surface.

[0019] According to one embodiment of the present invention, the transmittances of the first deposition portion, the second deposition portion and the third deposition portion are different, and further include a third deposition portion formed on the second deposition portion. In the cross-section of the regenerated SiC edge ring, a boundary line between the first deposition portion and the second deposition portion and a boundary line between the second deposition portion and the third deposition portion may include sections parallel to each other.

[0020] According to an embodiment of the present invention, the first deposition part may include at least two separated structures.

[0021] According to an embodiment of the present invention, the second deposition part may include at least two separated structures.

[0022] According to an embodiment of the present invention, the at least two separated structures may have the same transmittance.

[0023] According to one embodiment of the present invention, the first deposition portion forms an undivided structure, and the cross-section of the first deposition portion includes a first region to a third region from the outer side surface to the inner side surface of the SiC edge ring. The average thickness t1 of the first region, the average thickness t2 of the second region, and the average thickness t3 of the third region can be t1>t3>t2.

[0024] According to an embodiment of the present invention, the average thickness of the second deposition portion may be 0.5 mm to 3 mm.

[0025] According to an embodiment of the present invention, before forming the second deposition portion, the non-planar surface may be subjected to surface processing.

[0026] Effects of the Invention

[0027] According to the SiC edge ring of one embodiment of the present invention, unnecessary processes can be omitted and the edge ring of one of the regenerated components for semiconductor manufacturing can be regenerated in an effective manner. Thus, there is no need to discard the existing SiC edge ring of one of the semiconductor manufacturing components that has been replaced and discarded due to plasma etching, but instead a deposition portion is formed and regenerated into a new component, thereby enabling recycling.

[0028] According to another embodiment of the SiC edge ring of the present invention, by forming a new deposition portion on a component to be discarded after replacement, it is possible to achieve a process production efficiency equivalent to that of replacing a new product or higher at a relatively low cost.

[0029] Ultimately, embodiments of the present invention can reduce the production costs of semiconductor products and reduce the mass production of industrial waste. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 A perspective view of a SiC edge ring of a plasma processing device used in semiconductor manufacturing processes.

[0031] Figure 2 A cross-sectional view showing the structure of a SiC edge ring, one of the semiconductor manufacturing components, in which a wafer is mounted in a plasma processing device in a semiconductor production process.

[0032] Figure 3 FIG. 4 is a cross-sectional view showing a schematic structure of a first deposition portion of a SiC edge ring having a plasma damaged portion and an undamaged portion according to an embodiment of the present invention.

[0033] Figure 4 The cross-sectional view is a schematic structure diagram showing a second deposition portion formed on a first deposition portion of a SiC edge ring and a third deposition portion of multiple layers formed on the second deposition portion according to an embodiment of the present invention.

[0034] Figure 5a and 5b The cross-sectional view is a schematic structure diagram showing a second deposition portion formed on a first deposition portion of a SiC edge ring according to another embodiment of the present invention, and a third deposition portion of multiple layers formed on the second deposition portion.

[0035] Figure 6 The cross-sectional flow chart schematically shows a process of forming a second deposition portion on a first deposition portion of a SiC edge ring according to an embodiment of the present invention.

[0036] Figure 7 The cross-sectional flow chart schematically shows a process of forming a second deposition portion on a first deposition portion of a SiC edge ring including a masking step according to an embodiment of the present invention.

[0037] Figure 8 The cross-sectional flow chart schematically shows a process of forming a second deposition portion on a first deposition portion of a SiC edge ring according to another embodiment of the present invention.

[0038] Fig. 9 The cross-sectional flow chart schematically shows a process of forming a second deposition portion on a first deposition portion of a SiC edge ring including a masking step according to another embodiment of the present invention. DETAILED DESCRIPTION

[0039] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. The same reference numerals in the drawings represent the same components.

[0040] Various changes can be made to the embodiments described below. It should be understood that the following embodiments are not limited to the implementation forms, but include all changes, equivalents and substitutes thereof.

[0041] The terms used in the embodiments are only used to illustrate specific embodiments, not to limit the embodiments. The singular expression includes plural meanings except where explicitly indicated in the content. The terms "including" or "having" used in this specification should be understood as the presence of the features, values, steps, operations, constituent elements, parts or combinations thereof recorded in the specification, without excluding in advance the presence of one or more other features or values, steps, operations, constituent elements, parts or combinations thereof, or their additional possibilities.

[0042] Except for additional definitions, all terms used herein, including technical or scientific terms, have the general meanings understood by ordinary technicians in the field of the present invention. Terms defined in commonly used dictionaries should be interpreted as the meanings in the relevant technical field and should not be interpreted as ideal or overly formal meanings except for clear definitions in this specification.

[0043] In addition, in the description with reference to the accompanying drawings, regardless of the figure numbers, the same components are given the same figure numbers and repeated descriptions are omitted. In the process of describing the embodiments, when it is determined that the specific description of the relevant known functions or structures unnecessarily confuses the gist of the embodiments, the detailed description thereof is omitted.

[0044] Figure 1 A perspective view of a SiC edge ring of a plasma processing device used in semiconductor manufacturing processes.

[0045] Figure 1 A form 100 of various structures of a process device product according to a SiC edge ring is shown, and the SiC edge ring is one of the semiconductor manufacturing components used in a plasma processing device in a semiconductor production process. The cross section of the edge ring may have a structure with a step difference between the upper end surface and the placement surface, and may include a step difference surface connecting the step difference. In another example of the edge ring, the surface connecting the step difference may be formed as a vertical structure. The placement surface refers to the placement surface of the object to be processed, for example, the object to be processed may be a wafer.

[0046] Figure 2 A cross-sectional view showing the structure of a SiC edge ring, one of the semiconductor manufacturing components, in which a wafer is mounted in a plasma processing device in a semiconductor production process.

[0047] At this time, the wafer can be installed on all or part of the placement surface 104 of the edge ring according to the structure of the process device. Thereafter, the installed wafer and edge ring are etched by being exposed to plasma in the chamber of the plasma processing device. At this time, the portion exposed to the external plasma can be etched, especially the edge ring, and the portion not covered by the wafer in the upper end surface 102, the step surface 106 and the placement surface 104 can be etched intensively. Therefore, the semiconductor manufacturing components located in the plasma processing device and exposed to the plasma are damaged and need to be replaced regularly. The purpose of the present invention is to achieve the same effect as purchasing a new product at a low cost by forming a new deposition portion on the edge ring of the semiconductor manufacturing component to be discarded after regular replacement.

[0048] Figure 3 FIG. 1 is a cross-sectional view showing a schematic structure of a first deposition portion of a SiC edge ring having a plasma damaged portion and an undamaged portion according to an embodiment of the present invention. Figure 3 It can be seen that the damaged portion 112 is formed on the portion not covered by the wafer in the upper end face, step face, and placement face of the SiC edge ring. Figure 3 As shown, in some cases, the outer side surface 116 and the inner side surface 118 of the SiC edge ring may include undamaged portions.

[0049] In the present invention, if Figure 3 As shown, for the sake of convenience, the first deposition portion of the SiC edge ring is divided and referred to as: a first region (segment I) including an upper end surface formed with a damaged portion, a second region (segment II) including a damaged portion in a placement surface, and a third region (segment III) including an undamaged portion in a placement surface.

[0050] The SiC edge ring of the present invention includes a first deposition portion, which includes SiC having a plasma damaged portion and an undamaged portion; and a second deposition portion, which includes SiC formed on the first deposition portion, and a boundary between the damaged portion of the first deposition portion and the second deposition portion includes a non-flat surface.

[0051] The first deposition portion according to one aspect of the present invention may be a portion of a structure first manufactured as an edge ring by a chemical vapor deposition method. The first deposition portion according to one aspect of the present invention may include a damaged portion due to plasma etching and an undamaged portion that is not etched by plasma and thus maintains an initial shape and a processed surface.

[0052] In addition, according to the first deposition part of one aspect of the present invention, the deposition layer for the purpose of regeneration is stacked on the edge ring prepared initially, and in the process of processing from the bottom surface to make it standardized, the edge ring structure prepared initially is all processed and disappears, and the deposition layer stacked for the purpose of regeneration can be included in the first deposition part. That is, the first deposition part of the present invention can include a part of the layer deposited on the edge ring initially etched by plasma.

[0053] The second deposition part may be formed on the first deposition part. The second deposition part according to an aspect of the present invention may be stacked directly on damaged and undamaged portions of the first deposition part etched by plasma in a plasma processing apparatus.

[0054] At this time, the boundary between the damaged portion of the first deposition portion and the second deposition portion may include a non-flat surface. In the present invention, the non-flat surface refers to the surface of the edge ring being damaged by plasma and being etched into an irregular surface. The non-flat surface may be a surface formed with bumps and depressions, or may be a surface formed by partial fragments falling off from an initially standardized structure. The non-flat surface of the present invention is used as a term to refer to the edge ring surface, and the edge ring surface includes all side surfaces that are used in plasma processing equipment and are plasma etched to become uneven compared to the initially prepared edge ring product.

[0055] In addition, in one aspect of the present invention, the first deposition part, the second deposition part, or both may include SiC, and may further include other components including TaC and hydrocarbons. The hydrocarbons have a chemical formula of CxHy, where x is an integer greater than 1 and y is an integer greater than 2. In addition, the edge ring may be coated with a silicon layer on the silicon carbide substrate.

[0056] In addition, the first deposition part and the second deposition part may include the same components as the wafer to be produced. This is because if a component completely different from the wafer to be manufactured in the regeneration part is included, when the components of the semiconductor manufacturing device are damaged by plasma, the component may leak to the outside and contaminate the wafer. The constituent elements and component distributions of the first deposition part and the second deposition part of the SiC edge ring may be the same or different. That is, the non-regeneration part, the regeneration part, or both can significantly improve the bending strength and ensure higher corrosion resistance to plasma by further including SiC and additional components such as TaC and hydrocarbons.

[0057] According to an embodiment of the present invention, the non-planar surface may be formed by plasma etching.

[0058] According to one embodiment of the present invention, in the non-planar surface, the height difference between the highest point and the lowest point of the non-planar surface formed by the parts having the same height before exposure to plasma ( Figure 3 The height difference may be 0.01 mm to 3 mm (substantially less than 3 mm). As an example, the height difference may be 0.5 mm to 3 mm.

[0059] According to an embodiment of the present invention, the surface roughness of the non-planar surface may be 0.1 μm to 2.5 μm.

[0060] As an example, the surface roughness of the non-planar surface after the surface is etched by plasma may be 0.05 μm to 0.3 μm. In addition, as another example, the non-planar surface may be formed by processing a portion of the damaged surface after the surface is etched by plasma so that the surface roughness is formed to be 0.1 μm to 2.5 μm.

[0061] According to an example, even without including a separate processing step, when the surface roughness value of the first deposition part is formed to 0.1 μm to 2.5 μm, the second deposition part may form a uniform deposition layer on the surface layer of the first deposition part.

[0062] According to an embodiment of the present invention, the transmittances of the first deposition portion and the second deposition portion may be different.

[0063] The transmittance in the present invention refers to the degree to which light passes through the material layer, which is equivalent to the value obtained by dividing the intensity of light passing through the material layer by the intensity of light incident on the material layer. The transmittance can be measured in various ways, but it can also be that a sample with a thickness of 3 mm is manufactured and a light source with a light intensity of more than 150 Lux is used, and the distance between the sample and the light source is within 7 cm. Since the transmittance varies depending on the thickness, light source, or the distance between the sample and the light source, when the thickness is the same, the transmittance can be regarded as a relative value. Therefore, the transmittance is equivalent to the inherent characteristics of the material, and even if the material has the same components and composition, it can have different transmittances depending on its crystal structure or phase.

[0064] Although the first deposition part and the second deposition part of the SiC edge ring provided in one aspect of the present invention include the same composition as each other, the respective transmittances may be different.

[0065] Figure 4 The cross-sectional view is a schematic structure diagram showing a second deposition portion formed on a first deposition portion of a SiC edge ring and a third deposition portion of multiple layers formed on the second deposition portion according to an embodiment of the present invention.

[0066] like Figure 4As shown, the third deposition part can be formed into multiple layers. That is, according to one aspect of the present invention, the first third deposition part 220 is formed on the second deposition part, and the second third deposition part 230 can be formed on the first third deposition part. At this time, after the first third deposition part is formed and standardized as an edge ring, the standardized edge ring can be used in a plasma processing device. At this time, part of the surface of the first third deposition part is etched, and the second third deposition part is formed on the first third deposition part having a damaged portion, thereby obtaining a SiC edge ring including a third deposition part of multiple layers provided by one aspect of the present invention.

[0067] According to an embodiment of the present invention, the first deposition part may include at least any one selected from the group consisting of graphite, reaction sintered SiC, pressureless sintered SiC, hot pressed SiC, recrystallized SiC, chemical vapor deposited SiC, TaC and YaC.

[0068] According to one aspect of the present invention, the material of the first deposition part (non-regeneration part) is not particularly limited as long as it is a material suitable for a component that can be used in semiconductor manufacturing equipment, etc. As an example, it can be formed to include one or more of a carbon material including graphite that can be used as a base material, various SiC materials having excellent plasma resistance, and various TaC or YaC materials.

[0069] According to an aspect of the present invention, the second deposition part (regeneration part) may include SiC, TaC, or both, so that the plasma resistance characteristic is excellent.

[0070] According to an embodiment of the present invention, a difference in transmittance between the first deposition portion and the second deposition portion may be greater than a difference in transmittance between a plurality of deposited layers in the second deposition portion.

[0071] According to an embodiment of the present invention, the first deposition part includes a plurality of deposited layers, and transmittance may gradually change at boundaries between the plurality of deposited layers of the first deposition part.

[0072] According to an example of the present invention, when the first deposition part is formed into a plurality of layers, a gradual change in transmittance may be achieved at a boundary between layers of the deposited first deposition part.

[0073] According to an embodiment of the present invention, a third deposition portion is further included which is formed on the second deposition portion, and a boundary surface between the second deposition portion and the third deposition portion may include a non-flat surface.

[0074] In one aspect of the present invention, the third deposition portion may be further formed on the second deposition portion. At this time, the boundary surface between the second deposition portion and the third deposition portion may include a non-flat surface, because as described above, after the second deposition portion is formed, part of the surface of the second deposition portion is etched by plasma. That is, the SiC edge ring according to one aspect of the present invention may be that the second deposition portion is formed on the first deposition portion, standardized and manufactured into an edge ring, and used for plasma processing equipment, and then, after at least a portion of the surface of the second deposition portion is etched, the third deposition portion is formed on the second deposition portion including a partially damaged portion.

[0075] According to an embodiment of the present invention, the transmittances of the first deposition portion, the second deposition portion, and the third deposition portion may be different.

[0076] Just as the transmittances of the first deposition part and the second deposition part are different, the transmittances of the first deposition part, the second deposition part and the third deposition part can also be different. The third deposition part can have the same composition as the first deposition part and the second deposition part, but the transmittances can be different from each other.

[0077] In addition, according to one embodiment of the present invention, a third deposition portion is formed on the second deposition portion, and in the cross-section of the regenerated SiC edge ring, a boundary line between the first deposition portion and the second deposition portion and a boundary line between the second deposition portion and the third deposition portion may include sections parallel to each other.

[0078] In the sections parallel to each other, each deposition part can be formed in an area not damaged by plasma. The second deposition part can be formed on the portion of the first deposition part not damaged by plasma to form a parallel surface with its boundary. In addition, after the second deposition part is formed, even if exposed to plasma, the third deposition part can be formed on the portion not damaged by plasma to form a parallel surface with its boundary.

[0079] like Figure 4 As shown, due to reasons such as being covered by plasma on the wafer surface, a portion of the surface of the edge ring including the undamaged portion is formed into a flat surface. The boundary lines of the cross-section of the SiC edge ring between the first deposition portion, the second deposition portion, and the third deposition portion stacked on this portion may be parallel to each other. Therefore, the SiC edge ring provided in one aspect of the present invention may include a section in which the boundary line between the first deposition portion and the second deposition portion and the boundary line between the second deposition portion and the third deposition portion are parallel to each other. When the third deposition portion is formed into multiple layers, the boundary surfaces between the multiple layers of the third deposition portion may include sections that are parallel to each other.

[0080] According to an aspect of the present invention, a boundary surface between the first deposition part and the second deposition part, a boundary surface between the second deposition part and the third deposition part, and a boundary surface between layers when the third deposition part is formed in a plurality of layers may include portions formed parallel to each other.

[0081] According to one aspect of the present invention, after forming the deposition portion on the SiC edge ring, a standardization operation may be performed for use in a plasma processing device. As an example, the standardization operation performed in the present invention may be processing the bottom surface of the SiC edge ring on which the deposition portion is formed. That is, according to one aspect of the present invention, the bottom surface is processed from the bottom and standardized to a size suitable for a product suitable for a plasma processing device according to the thickness of the deposition portion stacked on the upper portion of the edge ring.

[0082] In this process, an edge ring can be formed due to plasma etching to have a shape similar to that shown in FIG. Figure 3 The same structure as the damaged edge ring (first deposition portion) 110. According to one aspect of the present invention, Figure 4 As shown, a plurality of deposition parts may also be formed into layers and stacked on such edge rings. Afterwards, when a certain thickness is processed from the bottom surface and standardized, a cross-sectional structure as shown in FIG. 5 may be formed in the standardized edge ring.

[0083] Figure 5a and 5b The cross-sectional view is a schematic structure diagram showing a second deposition portion formed on a first deposition portion of a SiC edge ring according to another embodiment of the present invention, and a third deposition portion of multiple layers formed on the second deposition portion.

[0084] According to an embodiment of the present invention, the first deposition part may include at least two separated structures.

[0085] Figure 5a The cross-sectional view of the SiC edge ring is shown, wherein the SiC edge ring is processed to a certain thickness from the bottom surface, so that the first deposition part 110 is divided into two structures 110 ′.

[0086] In addition, Figure 5a In the embodiment, the third deposition part is formed into two layers 220 and 230. In this case, the layers of the third deposition part do not necessarily have the same deposition thickness. In one aspect of the present invention, considering the degree of processing from the bottom surface, the third deposition part 230 can be formed to be particularly thicker than the other third deposition part 220 as required.

[0087] According to an embodiment of the present invention, the second deposition part 210 may include at least two separated structures 210 ′.

[0088] Figure 5bThe cross-sectional view of the SiC edge ring is shown, wherein the SiC edge ring is processed to a certain thickness from the bottom surface, and thus not only separates the first deposition part 110 but also separates the second deposition part 210 , thereby being separated into two structures.

[0089] In addition, Figure 5b In the embodiment, the third deposition part is formed into three layers 220, 230, and 240. At this time, considering the degree of processing from the bottom surface, the deposition thickness of each layer can be formed as required.

[0090] According to an embodiment of the present invention, the at least two separated structures may have the same transmittance.

[0091] The structures deposited in the same chamber and under the same deposition conditions can have the same transmittance, that is, the deposited structures formed simultaneously by the same raw material gas can have the same transmittance.

[0092] Figure 5a The first sedimentary layer of the separation, Figure 5b After the first deposition layer and the second deposition layer are deposited to form a structure connected to each other, after a certain thickness is processed from the bottom surface, they belong to structures separated from each other. Figure 5a The first sedimentary layer of the separation, Figure 5b The separated first deposition layer and the second deposition layer may have the same transmittance.

[0093] According to one embodiment of the present invention, the first deposition portion forms an undivided structure, and the cross-section of the first deposition portion includes a first region to a third region from the outer side surface to the inner side surface of the SiC edge ring. The average thickness t1 of the first region, the average thickness t2 of the second region, and the average thickness t3 of the third region can be t1>t3>t2.

[0094] Reference Figure 3 , according to an example of the present invention, the first region to the third region of the SiC edge ring are divided. For convenience, the cross section of the first deposition portion of the SiC edge ring is divided and referred to as: a first region (section I) including an upper end face formed with a damaged portion, a second region (section II) including a damaged portion in the placement surface, and a third region (section III) including an undamaged portion in the placement surface. In some cases, the first region may include a step surface connecting the upper end face and the placement surface. At this time, according to one aspect of the present invention, when the average thickness of each region is t1 to t3, the relationship between t1 to t3 may be t1>t3>t2.

[0095] According to an embodiment of the present invention, the average thickness of the second deposition portion may be 0.5 mm to 3 mm.

[0096] In one example, the average thickness of the second deposition portion may be 0.7 mm to 2.5 mm.

[0097] According to one aspect of the present invention, in the process of forming the second deposition portion, it can be said that it is particularly important to form the second deposition portion to an appropriate thickness. When the regeneration portion is formed too thin, all the regeneration portions are etched by plasma, and the damaged portion of the non-regeneration portion of the lower layer may be exposed. This can be a direct cause of reducing the quality of semiconductor products produced during the plasma processing technology. In addition, when the regeneration portion is formed too thick, it will lead to more serious waste of raw materials for forming the regeneration portion, and with the increase in the cost and workload consumed by the processing, it will eventually lead to problems such as increasing the cost of semiconductor products and reducing production efficiency. Therefore, in one aspect of the present invention, it can be quite important to properly control the thickness of the regeneration portion.

[0098] Considering that etching occurs at about 0.5 mm when the edge ring needs to be replaced in a conventional plasma processing apparatus, the average thickness of the second deposition portion is preferably 0.5 mm to 3 mm as confirmed through various experiments in one aspect of the present invention.

[0099] According to an embodiment of the present invention, before forming the second deposition portion, the non-planar surface may be subjected to surface processing.

[0100] Next, a method for preparing a SiC edge ring provided in one embodiment of the present invention will be described.

[0101] The SiC edge ring of the present invention comprises the following steps: preparing a SiC edge ring including a plasma damaged portion and an undamaged portion; masking a portion of the prepared SiC edge ring; forming a regeneration portion on the masked SiC edge ring by a chemical vapor deposition method; and removing the masking and subjecting the SiC edge ring formed with the regeneration portion to standard processing. The regeneration portion described herein may be the second deposition portion or the third deposition portion of the present invention, and in some cases, the first deposition portion may also be included in the regeneration portion described herein.

[0102] The method for preparing a SiC edge ring described below may be applicable to all parts in a plasma processing apparatus for manufacturing semiconductor products that need to be replaced regularly after being etched by exposure to plasma.

[0103] Figure 6 The cross-sectional flow chart schematically shows a process of forming a second deposition portion on a first deposition portion of a SiC edge ring according to an embodiment of the present invention.

[0104] like Figure 6As shown, according to an embodiment of the present invention, the second deposition portion can be directly formed on the first deposition portion of the SiC edge ring without including a masking step.

[0105] Figure 7 The cross-sectional flow chart schematically shows a process of forming a second deposition portion on a first deposition portion of a SiC edge ring including a masking step according to an embodiment of the present invention.

[0106] Figure 6 and Figure 7 A process of forming a second deposition part before forming a third deposition part according to an embodiment of the present invention is shown.

[0107] The following will be passed Figure 7 The cross-sectional structure of the SiC edge ring is shown to describe each step of forming a second deposition part on a first deposition part provided in an embodiment of the present invention.

[0108] Figure 7 a shows the steps of preparing a SiC edge ring including a plasma damaged portion and an undamaged portion.

[0109] Figure 7 a As an example of a SiC edge ring, a cross section of a damaged edge ring 110 is shown, wherein the damaged edge ring (first deposition portion) 110 includes a damaged portion 112 etched by plasma in a dry etching device and an undamaged portion 114 that is not exposed to plasma and thus not etched. Figure 2 Compared with the edge ring before the damage, Figure 7 The damaged portion 112 etched by plasma in a may be formed on the upper end surface, the step surface and a portion of the placement surface not covered by the wafer. The remaining portion 114 of the placement surface may be covered by the wafer and protected from the plasma, thereby forming an undamaged portion. Figure 7 b shows the step of masking 410 a portion of the prepared SiC edge ring.

[0110] The masking step may form a mask in an area including an undamaged portion during the deposition process by the chemical vapor deposition method. This is to minimize the deposition of the raw material gas in the portion where deposition is not required in the step of forming the regeneration portion (second deposition portion), thereby ultimately minimizing the post-deposition processing. That is, the masking step is performed to improve the efficiency of the preparation process of the SiC edge ring of the present invention.

[0111] At this time, since materials such as SiC and TaC that are difficult to process may be included in the components of the regenerated portion, it is particularly important to ensure the productivity of the product by minimizing the direct processing area of ​​the regenerated portion during the subsequent standardized processing. In one aspect of the present invention, in order to ensure convenience in the subsequent standardized processing steps, a configuration for masking a portion containing an undamaged surface may be included.

[0112] According to an example of the present invention, the masking step may include masking one or more undamaged surfaces selected from the group consisting of a bottom surface, an outer side surface, and an inner side surface of the SiC edge ring. When describing an edge ring as an example of a semiconductor manufacturing component of the present invention, as an example, Figure 7 As shown in b, the mask can be formed on one or more of the bottom surface, the outer side surface and the inner side surface belonging to the undamaged surface portion.

[0113] As the masking material, a material that is easier to process than the deposition material (graphite material, etc.) included in the regeneration section can be used. Thus, in the subsequent processing steps, the masked portion can be processed more easily than the portion where the deposition material is directly formed. That is, by including the masking step in the method for preparing the SiC edge ring of the present invention, a standardized surface of the regenerated SiC edge ring can be easily obtained.

[0114] Figure 7 c shows a step of forming a regeneration part 300 (second deposition part) on the partially masked SiC edge ring by a chemical vapor deposition method.

[0115] In this step, according to the chemical vapor deposition method, with a partially masked SiC edge ring installed in the chamber, a regeneration part (second deposition part) is formed on the first deposition part by deposition on the SiC edge ring provided with a raw material gas.

[0116] like Figure 7 As shown in Fig. 3, the damaged portion of the SiC edge ring due to plasma etching may include a flat and uneven surface. At this time, the present invention is characterized in that the damaged portion of the SiC edge ring due to plasma etching is not processed in advance and a regenerated portion is formed. Therefore, according to one aspect of the present invention, a separate surface processing step that can be added can be omitted, thereby increasing the speed of the entire process and reducing the cost in the regeneration process.

[0117] As a specific method for forming the regeneration part step, at a deposition temperature of 1000°C to 1500°C, the film forming rate can be 20 μm / hour to 400 μm / hour, and the residence time of the raw material gas can be 7 seconds to 110 seconds. Figure 7As shown in c, the SiC edge ring formed with the regenerated portion may be in an unprocessed form so as not to conform to the specifications of the product required on site.

[0118] Then, the process of removing the mask and the process of normalizing the SiC edge ring formed with the regenerated portion may be performed. At this time, the process of removing the mask and the process of normalizing may be performed simultaneously, or any one of the two processes may be performed first and then the remaining process may be performed. At this time, the process of removing the mask formed on a part of the non-regenerated portion may be easily performed compared to the process of normalizing the regenerated portion formed on the non-regenerated portion by processing.

[0119] According to an example of the present invention, the step of standardizing the SiC edge ring formed with the regeneration portion may include standardizing the thickness of the SiC edge ring by processing the bottom surface of the SiC edge ring. According to the formation of the regeneration portion by deposition, the thickness of the SiC edge ring may be greater than the size of the edge ring required in the field, and the present invention is characterized in that standardization is achieved by bottom surface processing.

[0120] Figure 7 c shows the II' section line. In one aspect of the present invention, in a standardized processing step, such as the II' section line, the SiC edge ring applicable to semiconductor manufacturing equipment can be standardized by processing the bottom surface of the SiC edge ring.

[0121] In one aspect of the present invention, the process of removing the mask, the process of processing the deposited layer forming the regenerated portion, and the process of processing the bottom surface of the SiC edge ring can be performed separately or together. In one aspect of the present invention, the order of performing each process can be changed as long as the above processes can be performed.

[0122] Another SiC edge ring preparation method of the present invention comprises the following steps: preparing a SiC edge ring including a plasma damaged portion and an undamaged portion; processing the bottom surface of the prepared SiC edge ring; masking a portion of the processed SiC edge ring; forming a regeneration portion on the partially masked SiC edge ring by a chemical vapor deposition method; and removing the masking and subjecting the SiC edge ring formed with the regeneration portion to standardized processing.

[0123] Figure 7 d shows a SiC edge ring formed with a regenerated portion that has completed the normalization process.

[0124] Figure 8 The cross-sectional flow chart schematically shows a process of forming a second deposition portion on a first deposition portion of a SiC edge ring according to another embodiment of the present invention.

[0125] like Figure 8 As shown, according to another embodiment of the present invention, the second deposition portion can be directly formed on the first deposition portion of the SiC edge ring without including a masking step.

[0126] Fig. 9 The cross-sectional flow chart schematically shows a process of forming a second deposition portion on a first deposition portion of a SiC edge ring including a masking step according to another embodiment of the present invention.

[0127] The following will be passed Fig. 9 The cross-sectional structure of the SiC edge ring is shown to describe each step of forming a second deposition part on a first deposition part provided in another embodiment of the present invention.

[0128] Fig. 9 a shows the steps of preparing a SiC edge ring including a plasma damaged portion and an undamaged portion.

[0129] Fig. 9 b shows the step of processing the bottom surface of the prepared SiC edge ring along line II-II'. In this embodiment of the present invention, it is characterized in that when the thickness of the SiC edge ring becomes thicker due to the formation of the regeneration portion, the bottom surface of the prepared SiC edge ring is preferentially processed in consideration of the need for standardization.

[0130] Fig. 9 c shows the step of masking 420 a portion of the prepared SiC edge ring. According to another embodiment of the present invention, Figure 7 As shown in b, the clamp can be separated into a clamp for supporting the inner and outer sides and a clamp for supporting the bottom surface; Fig. 9 As shown in c, it can also be formed as one piece.

[0131] Fig. 9 d shows the step of forming a regeneration portion 300 on the partially masked SiC edge ring by a chemical vapor deposition method.

[0132] Fig. 9 e shows a step of removing the mask and performing standardized processing on the SiC edge ring having the regenerated portion formed therein. At this time, according to one aspect of the present invention, since the step of processing the bottom surface of the prepared SiC edge ring along the II-II' line has been previously performed, the thickness of the SiC edge ring having the regenerated portion formed therein has been standardized to a certain extent, and thus, in this step, no great effort is required to perform standardized processing.

[0133] When deposition is continuously performed during the deposition process of the second deposition part, as described above, abnormal structures are continuously grown, and a poor quality SiC edge ring may be formed eventually. At this time, the SiC edge ring including the second deposition part will be formed to have a worse quality than the SiC edge ring before the plasma damage.

[0134] According to an example of the present invention, at the boundary of each layer of the stacked layer, the growth interruption of more than one tissue may be included. In each layer of the stack, an abnormal tissue structure may be generated by a cell nucleus formed by impurities or a uniform reaction. In the process of manufacturing products including SiC using a chemical vapor deposition method, controlling the growth of the above-mentioned abnormal tissue structure becomes an important issue. In one aspect of the present invention, the continuous growth of the abnormal crystal structure can be controlled by interrupting the existing continuous deposition process and gradually forming each layer.

[0135] According to an example of the present invention, when the second deposition portion is formed into a plurality of layers, the continuous growth of abnormal tissues at the boundaries between the layers will be interrupted, and a second deposition portion having uniform quality can be formed.

[0136] According to an example of the present invention, when the stacked first deposition part is formed to have multiple layers, the color at the boundary of each layer can be gradually changed. In addition to the transmittance, the colors of the stacked layers can also be different. At this time, the color of the boundary of each layer of the stack of the first deposition layer can be gradually changed, rather than changing so that the boundaries of different colors can be clearly divided. As described above, in order to gradually change the transmittance, in the present invention, multiple raw gas injection ports can be used, and a method of stacking layers with different injection ports can be used.

[0137] According to an example of the present invention, unlike the first deposition part, even if the second deposition part is configured to be formed with multiple layers, the boundaries between the layers are clearly divided; when the second deposition part is formed with multiple layers, the boundary transmittance between the layers in the second deposition part can be changed discontinuously.

[0138] According to an example of the present invention, before the step of forming the regeneration portion, a step of cleaning a damaged portion of the prepared SiC edge ring may be further included.

[0139] In the cleaning step, surface impurities of the prepared SiC edge ring may be removed. In the present invention, the method of the cleaning step or the apparatus that can be used therefor is not particularly limited.

[0140] The cleaning step provided in one aspect of the present invention can be performed in a method that is significantly different from the method of performing a cutting or flattening process. The damaged portion of the SiC edge ring due to plasma etching may have an irregular non-flat surface. In this cleaning step, surface impurities are removed by at least effectively performing chemical vapor deposition to form a bond to the non-flat surface. Compared with performing a cutting or flattening process, this process is easier and takes less time.

[0141] According to an example of the present invention, the cleaning step may include at least any one selected from the group consisting of dry heat treatment cleaning, sandblasting cleaning, brushing, cleaning liquid spray cleaning, chemical cleaning and ultrasonic cleaning.

[0142] According to one aspect of the present invention, the cleaning solution may be an acidic or alkaline solution.

[0143] According to an example of the present invention, in the step of forming the regenerated portion, the depositing may be performed in a region including a damaged portion of the prepared SiC edge ring.

[0144] An important feature of the present invention is that in the step of forming the regenerated portion, the deposited material is directly covered on the damaged portion of the prepared SiC edge ring to form the regenerated portion. That is, the regenerated portion can be deposited on the damaged portion while the damaged portion remains in a damaged state. As a result, the boundary surface between the damaged portion and the regenerated portion formed thereon can be a damaged morphology, that is, a non-flat surface, and irregular lines can be confirmed in a vertical section.

[0145] According to an example of the present invention, the step of forming the regenerated portion may be performed in a free state of a processing step of the prepared SiC edge ring.

[0146] That is, the present invention may not include a process step of performing processing before the step of forming the regeneration portion. In one aspect of the present invention, even without including a process step of processing a particularly damaged portion, a SiC edge ring that can be effectively used in a plasma processing apparatus can be formed. Therefore, the regeneration portion of the present invention can be directly formed on a portion damaged by plasma.

[0147] According to an example of the present invention, the step of forming the regenerated portion (second deposition portion) may include forming the regenerated portion on a non-flat surface of the damaged portion.

[0148] According to an example of the present invention, the masking step may include a step of performing masking by a fixture.

[0149] The masking step may be performed by a fixture that can support at least a portion of the SiC edge ring. The fixture may include a reference fixture that supports a bottom surface of an undamaged surface of the damaged SiC edge ring, and may also include another surface fixture that supports another damaged surface of the damaged SiC edge ring.

[0150] According to an example of the present invention, the masking step may be performed so as to mask an undamaged portion including at least one surface selected from the group consisting of a bottom surface, an outer side surface, and an inner side surface of the SiC edge ring.

[0151] That is, the fixture can support the bottom surface, the outer side surface and the inner side surface of the undamaged portion where the SiC edge ring may exist. In this case, the fixture may include a reference fixture supporting the bottom surface and another side fixture (an inner side fixture and an outer side fixture). The reference fixture and the another side fixture may be separate structures (see Figure 7 b), or it can be an integrated structure (see Fig. 9 c).

[0152] According to an example of the present invention, the following steps may be further included: removing the mask and performing standard processing on the SiC edge ring formed with the regeneration portion; and then completing cleaning of the SiC edge ring.

[0153] In the finishing cleaning step, after removing the mask and performing standard processing on the SiC edge ring formed with the regenerated portion, cleaning is finally performed.

[0154] According to an example of the present invention, the completion cleaning step may include: a first physical or chemical cleaning step, a heat treatment cleaning step, and a second physical or chemical cleaning step. In the present invention, the first and second physical or chemical cleaning steps are not particularly limited, but a pure solution including acid, alkali and distilled water or ultrasonic waves may be used for cleaning. This is to remove impurities remaining on the surface of the SiC edge ring. The heat treatment cleaning step increases the temperature of the residual impurities that were not cleaned in the first physical or chemical cleaning step, so that cleaning can be performed by the second physical or chemical cleaning step.

[0155] According to an example of the present invention, the heat treatment temperature of the heat treatment cleaning step may be 800°C to 1400°C. Considering the deposited material, by forming the heat treatment temperature, the residual impurities that have not been cleaned by the first physical or chemical cleaning step can be put into a state where further cleaning can be performed. When the heat treatment temperature is lower than 800°C, the residual impurities may not be in a sufficiently cleaned state; when it exceeds 1400°C, there may be a problem of increased production costs due to the process design for forming an excessively high temperature.

[0156] According to an example of the present invention, the step of forming the regeneration portion may include the steps of: confirming an etching thickness of the plasma damaged portion; and forming the regeneration portion having a thickness of 120% to 400% of a maximum value of the etching thickness.

[0157] According to one aspect of the present invention, in the step of forming the regeneration portion, forming the regeneration portion to an appropriate thickness is an important factor in determining the efficiency of the process. When the regeneration portion is formed too thin, all the regeneration portions are etched by plasma, resulting in the possibility that the damaged portion of the non-regeneration portion of the lower layer is exposed. This can be a direct cause of reducing the quality of the semiconductor products produced during the plasma processing technology. In addition, when the regeneration portion is formed too thick, the waste of raw materials for forming the regeneration portion is more serious, and with the increase in the cost and workload consumed by the processing, the cost of the semiconductor product will eventually increase and the production efficiency will be reduced. Therefore, in one aspect of the present invention, properly controlling the thickness of the regeneration portion becomes an important factor.

[0158] In one aspect of the present invention, in the step of forming a regenerated portion, the etching thickness of the SiC edge ring including the plasma damaged portion compared to the thickness of the original SiC edge ring is first confirmed, and a regenerated portion having a thickness of 120% to 400% of the maximum value of the etching thickness of the damaged portion can be formed.

[0159] As described above, when the regenerated portion to be formed is less than 120% of the maximum value of the etching thickness, the non-flat surface of the damaged portion may be exposed by plasma again. In addition, considering that the regeneration process of the SiC edge ring is performed before the boundary between the base material or the deposited layer is exposed due to plasma etching during use, when the regenerated portion to be formed exceeds 400% of the maximum value of the etching thickness, an overly thick regenerated layer will be formed, thereby increasing the thickness to be processed for standardization, resulting in reduced regeneration efficiency and other problems.

[0160] The above embodiments are described with limited drawings, and a person skilled in the art can make various modifications and variations to the above descriptions. For example, the described techniques are performed in a different order from the described methods, and / or the described constituent elements are combined or combined in a different form from the described methods, or replaced or substituted by other constituent elements or equivalents to obtain the same effect.

[0161] Therefore, other embodiments, other examples and equivalents of the claims all belong to the scope of the patent claims.

Claims

1. A SiC edge ring, comprising: a first deposition section including SiC having a plasma damaged portion and an undamaged portion; a second deposition portion including SiC formed on the first deposition portion, and a third deposition portion formed on the second deposition portion, The boundary between the damaged portion of the first deposition portion and the second deposition portion includes a non-flat surface, A boundary surface between the second deposition portion and the third deposition portion includes a second non-planar surface.

2. The SiC edge ring according to claim 1, The non-planar surface is formed due to plasma etching.

3. The SiC edge ring according to claim 1, In the uneven surface, a height difference between a highest point and a lowest point of the uneven surface formed by portions having the same height before exposure to plasma is 0.5 mm to 3 mm.

4. The SiC edge ring according to claim 1, The surface roughness of the non-flat surface is 0.1 μm to 2.5 μm.

5. The SiC edge ring according to claim 1, The first deposition portion and the second deposition portion have different transmittances.

6. The SiC edge ring according to claim 1, The first deposition part includes at least any one selected from the group consisting of graphite, reaction-sintered SiC, pressureless sintered SiC, hot-pressed SiC, recrystallized SiC, chemical vapor deposited SiC, TaC, and YaC.

7. The SiC edge ring according to claim 6, A difference in transmittance between the first deposition portion and the second deposition portion is greater than a difference in transmittance between a plurality of deposited layers in the second deposition portion.

8. The SiC edge ring according to claim 1, The first deposition section includes a plurality of deposited layers, At boundaries between layers of the plurality of deposited layers of the first deposition part, transmittance gradually changes.

9. The SiC edge ring according to claim 1, The transmittances of the first deposition part, the second deposition part and the third deposition part are different. Also included is a third deposition portion formed on the second deposition portion, wherein in a cross section of the regenerated SiC edge ring, a boundary line between the first deposition portion and the second deposition portion and a boundary line between the second deposition portion and the third deposition portion include sections parallel to each other.

10. The SiC edge ring according to claim 1, The first deposition part includes at least two separated structures.

11. The SiC edge ring according to claim 1, The second deposition portion includes at least two separated structures.

12. The SiC edge ring of claim 10 or claim 11, The at least two separated structures have the same transmittance.

13. The SiC edge ring of claim 1, The first deposition part forms an undivided structure, From the outer side surface to the inner side surface of the SiC edge ring, the cross section of the first deposition portion includes a first region to a third region, The average thickness t1 of the first region, the average thickness t2 of the second region, and the average thickness t3 of the third region are t1>t3>t2.

14. The SiC edge ring of claim 1, The average thickness of the second deposition portion is 0.5 mm to 3 mm.

15. The SiC edge ring of claim 1, Before forming the second deposition portion, the non-planar surface is subjected to surface processing.

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