A detection system integrating an optical probe on a silicon wafer and its application

Abstract

The invention discloses a detection system for integrating an optical probe on a silicon wafer, comprising: a silicon wafer (1) provided with a detection device (10), a focus ring (2) arranged below the silicon wafer (1) and half-covering the silicon wafer, an electrostatic chuck (5) arranged below the focus ring (2), a shower head (3) spaced from the silicon wafer (1) and arranged above the silicon wafer (1), the shower head (3) comprising at least two spray holes (4), the detection device (10) comprising an optical probe module (6), a collection module (7), a transmission module (8) and a first power supply module (9), and in a working state, the optical probe module (6) collects and shoots images of the shower head (3) and the focus ring (2). The invention has a simple structure, is easy to use, has powerful functions, and has extremely high commercial value.

Description

Technical Field

[0001] The invention belongs to the field of semiconductor etching detection, and in particular to a detection system integrating an optical probe on a silicon wafer and application thereof. Background Art

[0002] In advanced semiconductor etching processes, the focus ring and shower head, which are directly exposed to the corrosive plasma environment, are important components of the etching process and are also consumable materials. They need to be replaced in time after being corroded to a certain extent to prevent the excessive gap between the focus ring and the silicon wafer from causing uneven plasma distribution, and the excessive holes in the shower head from affecting the flow distribution of the process gas, thereby affecting the etching process.

[0003] At present, there are two methods for detecting the focusing ring and the air shower head: manual opening inspection and optical inspection. Manual opening inspection requires opening the process chamber and checking with the human eye, which is time-consuming and labor-intensive. Optical inspection is to install an optical probe inside or outside the process chamber to detect the focusing ring and the air shower head. However, the internal structure of the etching chamber is dense and the space is limited. It is difficult to install additional large-sized optical probes. The imaging quality of small-sized optical probes is poor at a long distance and cannot effectively distinguish the corrosion situation. In addition, the etching chamber is a highly corrosive environment. The optical observation window and lens are easily corroded, have a short lifespan, and need to be replaced regularly.

[0004] In the advanced semiconductor integrated circuit manufacturing process, there are hundreds of silicon wafer processing steps, and the silicon wafer needs to be transferred between various process chambers, such as thin film deposition chambers, etching chambers, and cleaning chambers. The silicon wafer is usually placed in the focus ring on the electrostatic chuck by a robot to be fixed, and whether the silicon wafer can be accurately placed in the center of the focus ring will have a great impact on subsequent processing. For example, in the plasma etching process, the different gaps between the silicon wafer and the focus ring make its electric field distribution uneven, which is easy to produce arc sparking, resulting in damage to the silicon wafer and the focus ring, and even destroying the electrostatic chuck; in the chemical / physical vapor deposition process, if the silicon wafer is not placed in the preset position or is placed at an angle, the thickness of the film deposited on the silicon wafer will be uneven, affecting the performance of the device; in the photolithography process, the accuracy of the silicon wafer positioning directly determines the success or failure of the photolithography.

[0005] At present, the optical method is usually used to position silicon wafers in the market. A US patent discloses a silicon wafer position calibration device and method. The patent uses multiple cameras to shoot and record the edge image of the silicon wafer, compares and analyzes and calculates the concentricity of the silicon wafer, and then corrects the position of the silicon wafer through a robot and repeats the shooting and analysis until the silicon wafer moves to the specified position. In addition, the existing silicon wafer positioning methods all require the addition of sensor equipment outside the silicon wafer, and cannot be directly installed in the processing chamber. A separate positioning and measurement chamber is required, in which it is calibrated and then transported to the processing chamber by a robot. The steps are cumbersome, time-consuming and inefficient.

[0006] However, currently, there is no technical solution that can solve the above-mentioned technical problems. Specifically, there is no detection system and application thereof that integrates an optical probe on a silicon wafer. Summary of the invention

[0007] In view of the technical defects existing in the prior art, in order to solve the problem of difficulty in detecting the corrosion degree of the focusing ring and the shower head in the etching chamber, and the problem of centering the position of the silicon wafer, the purpose of the present invention is to provide a detection system integrating an optical probe on a silicon wafer and its application. According to one aspect of the present invention, a detection system integrating an optical probe on a silicon wafer is provided, comprising: a silicon wafer provided with a detection device, a focusing ring arranged below the silicon wafer and semi-covering the silicon wafer, an electrostatic chuck arranged below the focusing ring, and a shower head arranged above the silicon wafer and separating the silicon wafer, wherein the shower head comprises at least two spray holes,

[0008] Wherein, the detection device includes an optical probe module, a collection module, a transmission module and a first power supply module. In a working state, the optical probe module collects and shoots images of the air shower head.

[0009] Preferably, it also includes a host computer, which includes an I / O module, a processing module, and a second power supply module, wherein the second power supply module is respectively connected to the I / O module, the processing module and the first power supply module, and the I / O module is respectively connected to the transmission module and the processing module.

[0010] Preferably, the substrate of the detection device is a silicon wafer.

[0011] Preferably, the size of the detection device is 200 mm or 300 mm.

[0012] According to another aspect of the present invention, a control method for detecting the corrosion degree of a spray hole in a shower head is provided, comprising:

[0013] a: determining the relative distance d between the central pixels of the two spray holes and the relative size e of the inner diameter of the spray holes based on the shower head image captured by the optical probe module;

[0014] b: determining the actual distance f between the center holes of the two spray holes based on the center hole distance of the spray holes;

[0015] c: Determine the actual size g of the inner diameter of each of the spray holes, and judge the corrosion degree of the spray holes in the air shower head based on the actual size.

[0016] Preferably, in step c, the actual size g of the inner diameter of the spray hole is determined by the following formula:

[0017] Wherein, d is the relative distance between the central pixels of the two spray holes, e is the relative size of the inner diameter of the spray hole, and f is the actual distance between the central holes of the two spray holes.

[0018] According to another aspect of the present invention, a control method for detecting the degree of corrosion and thinning of a shower head is provided, comprising:

[0019] i: Based on the pre-calibration, the actual distance h between the shower head and the optical probe or silicon wafer under standard conditions and the relative distance j between the center pixels of the two shower holes under standard conditions are determined;

[0020] ii: Determine the relative distance k between the center pixels of two spray holes in actual situations;

[0021] iii: Determine the actual distance l between the shower head and the optical probe or the silicon wafer in actual conditions, and judge the extent of corrosion and thinning of the shower head based on the actual distance l.

[0022] Preferably, in step iii, the actual situation is that the air shower head is connected to the optical probe or

[0023] The actual distance l of the silicon wafer is determined by the following formula:

[0024] Among them, h is the actual distance between the air shower head and the optical probe or silicon wafer under standard conditions, j is the relative distance between the center pixels of two spray holes under standard conditions, and l is the actual distance between the air shower head and the optical probe or silicon wafer under actual conditions.

[0025] According to another aspect of the present invention, a control method for detecting the degree of corrosion of a focus ring is provided, comprising: setting the detection device at the edge of a silicon wafer, capturing an image of the focus ring, determining the distance corresponding to pixels in an imaging area of ​​an optical probe under standard conditions through pre-calibration, and determining the height of the focus ring under actual conditions through the distance corresponding to pixels in the imaging area of ​​the optical probe determined under actual conditions and the height of the focus ring under standard conditions.

[0026] According to another aspect of the present invention, a first control method for detecting the degree of centering of a silicon wafer is provided, comprising: setting the detection device at the center of the silicon wafer, determining whether the center position of the image captured by the optical probe module of the air shower head overlaps with the center of the spray hole set at the center position of the air shower head; if not, calculating the offset as the degree of centering of the silicon wafer.

[0027] According to another aspect of the present invention, a second control method for detecting the degree of centering of a silicon wafer comprises: arranging a plurality of the detection devices on the circumference of the silicon wafer, and judging whether the height of the focusing ring captured by each optical probe module is consistent based on the imaging effect of larger objects near and smaller objects far away; if they are consistent, the silicon wafer is aligned with the focusing ring.

[0028] Compared with the existing solutions, the present invention integrates the detection device on the silicon wafer, and there is no need to install additional equipment in the etching process chamber, which saves space; the present invention can transfer the wafer through a robot, without stopping the process flow to open the process chamber or manual intervention, which saves time. The present invention can realize real-time on-site wireless detection. Compared with the probe installed outside the cavity, the wafer can be directly transferred to the focus ring and the air shower head for close-range measurement, and the detection accuracy is higher. The present invention has a simple structure, is easy to use, and has powerful functions, and has extremely high commercial value. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Other features, objects and advantages of the present invention will become more apparent from the detailed description of non-limiting embodiments made with reference to the following drawings:

[0030] Figure 1 A side cross-sectional view of a detection system in which an optical probe is integrated on a silicon wafer is shown in accordance with a specific embodiment of the present invention;

[0031] Figure 2 A schematic diagram showing the module connection of a detection system for integrating an optical probe on a silicon wafer according to a first embodiment of the present invention is shown;

[0032] Figure 3 A schematic diagram showing a specific flow chart of a control method for detecting the corrosion degree of a spray hole in a shower head according to another specific embodiment of the present invention;

[0033] Figure 4 A schematic diagram showing the detection of the spray holes in the air shower head according to the second embodiment of the present invention is shown;

[0034] Figure 5 A specific flow chart of a control method for detecting the degree of corrosion and thinning of a gas shower head according to another specific embodiment of the present invention is shown;

[0035] Figure 6 A side cross-sectional view of focus ring detection showing another specific embodiment of the present invention; and

[0036] Figure 7 A top view of focus ring detection is shown according to another specific embodiment of the present invention. DETAILED DESCRIPTION

[0037] In order to better illustrate the technical solution of the present invention, the present invention is further described below in conjunction with the accompanying drawings.

[0038] Figure 1 A side cross-sectional view of a detection system in which an optical probe is integrated on a silicon wafer is shown, showing a specific embodiment of the present invention. Figure 2 The module connection diagram of a detection system for integrating an optical probe on a silicon wafer is shown in the first embodiment of the present invention. Figure 1 as well as Figure 2 The detection system in which the optical probe is integrated on a silicon wafer is specifically described. The technical core of the present invention is to integrate the optical probe on a silicon wafer, where the silicon wafer is a silicon wafer used in standard working conditions, and the optical probe is used to acquire images of the air shower head and the focusing ring, and then the size of the air shower head and the focusing ring in the actual situation is compared through the size relationship of each component in the image, so as to realize the detection of the corrosion and centering conditions of the air shower head and the focusing ring.

[0039] Furthermore, the present invention discloses a detection system that integrates an optical probe on a silicon wafer, including a silicon wafer 1 provided with a detection device 10. In the present application, the detection device 10 can be set at different positions of the silicon wafer 1 according to different detection parts. For example, it can be set in the middle of the silicon wafer 1 to realize the detection of the degree of corrosion of the air shower head, and it can be set at the edge of the silicon wafer 1 to realize the detection of the centering condition of the focus ring, etc. These will be further described in the specific implementation methods described later.

[0040] Furthermore, a focusing ring 2 is provided below the silicon wafer 1 and half covers the silicon wafer, such as Figure 1As shown, the focus ring 2 is a semi-open hollow structure, and the silicon wafer 1 is disposed in the hollow structure and is semi-covered above the focus ring 2 of the silicon wafer 1 .

[0041] Furthermore, it also includes an electrostatic chuck 5 disposed below the focusing ring 2, such as Figure 1 As shown, the electrostatic chuck 5 is used to absorb and fix the silicon wafer.

[0042] Furthermore, it also includes a shower head 3 arranged above the silicon wafer 1 and spaced apart from the silicon wafer 1, and the shower head 3 includes at least two spray holes 4, such as Figure 1 As shown, the gas shower head 3 is used to spray the process gas through the spray holes 4. In the present application, three spray holes 4 are preferably shown, and in other embodiments, more holes may be provided.

[0043] Those skilled in the art will understand that the detection device 10 is integrated on the silicon wafer 1. In a conventional etching process, the silicon wafer 1 is placed on the focusing ring 2 and the electrostatic chuck 5, and the gas shower head 3 is above the focusing ring 2 and the electrostatic chuck 5. The process gas is blown onto the silicon wafer 1 through the spray hole 4. In the semiconductor manufacturing process, the silicon wafer to be processed is adsorbed and fixed by the electrostatic chuck 5, and there is a gap between the silicon wafer 1 and the focusing ring 2. When the center of the silicon wafer 1 and the center of the focusing ring 2 are not aligned, the gap between the silicon wafer 1 and the focusing ring 2 is not uniform in spatial distribution, resulting in uneven distribution of the applied electric field during plasma etching, which is prone to arc ignition and damage to the silicon wafer, the focusing ring and the electrostatic chuck. After multiple etching processes, since the focusing ring 2 and the shower head 3 are exposed to the etching environment, their surfaces are corroded, which is usually manifested as a decrease in the height of the focusing ring 2, a thinning of the shower head 3, and an increase in the size of the spray hole 4 therein. The present invention mainly determines the degree of reduction in the height of the focusing ring 2, the degree of thinning of the shower head 3, the degree of increase in the size of the spray hole 4 therein, etc. through a detection device combined with precise calculations.

[0044] Further, the detection device 10 includes an optical probe module 6, a collection module 7, a transmission module 8 and a first power supply module 9. In the working state, the optical probe module 6 collects and shoots images of the air shower head 3 and the focusing ring 2. In such an embodiment, the optical probe module 6 is used to measure the height of the focusing ring and the hole size of the air shower head, and includes a light source (such as LED), an imaging element (such as CMOS, CCD), an optical lens, and a driving circuit, and its output is connected to the collection module 7 via a wire; the collection module 7 is used to collect the image information of the focusing ring and the air shower head taken by the optical probe, and the collection module 7 contains a circuit for providing any input signal required to drive the optical probe module 6, such as a microprocessor, an amplifier, an analog-to-digital converter (ADC), a current source, a storage and a filter, etc.; the transmission module 8 sends the image information in the collection module 7 to the input / output (I / O) module 111 of the host computer 11, and receives any control signal from the I / O module 111 of the host computer 11. The communication connection between modules can use a wired communication module (such as RS232 / 485, USB, etc.), a wireless communication module (such as infrared, Bluetooth, ZigBee, Wi-Fi, etc.), or directly communicate through an inductive induction coil; the first power supply module 9 provides power for the device, including a rechargeable lithium battery, a wired charging module, and a wireless charging module. The power supply module 9 provides power for all components of the detection device 10, which can be a rechargeable lithium battery, and is interconnected with the second power supply module 113 of the host computer 11.

[0045] Furthermore, it also includes a host computer 11, which includes an I / O module 111, a processing module 112, and a second power supply module 113, wherein the second power supply module 113 is respectively connected to the I / O module 111, the processing module 112 and the first power supply module 113, and the I / O module 111 is respectively connected to the transmission module 8 and the processing module 112. The host computer 11 can be any microprocessor, such as a computer or a handheld computer PDA or a PLC system built by a single-chip microcomputer. The host computer 11 includes the I / O module 111, the processing module 112, and the second power supply module 113. The I / O module 111 can use a wired communication module, a wireless communication module, or directly communicate with the transmission module 8 of the detection device 10 through an inductive induction coil. The I / O module 111 may also include a display, a keyboard or a mouse, etc.

[0046] Further, the substrate of the detection device 10 is preferably a silicon wafer, but can also be made of other materials that can be used in manufacturing integrated circuits, such as gallium arsenide, glass, ceramic, nitride or carbide. The diameter of the substrate is preferably 200mm or 300mm to match the current wafer size, but it can have any diameter or any shape.

[0047] The present invention technicians understand that this application Figures 3 to 7 Mainly shows the use of Figure 1 to Figure 2 The specific application of the detection system in which the optical probe is integrated on the silicon wafer used in the invention mainly includes three aspects: the first is the detection of the corrosion condition of the air shower head, the second is the detection of the corrosion condition of the focus ring, and the third is the detection of the centering degree of the silicon wafer. More specifically, the detection method is to use a manipulator to transfer the silicon wafer integrated with the optical probe to the position of the focus ring and the air shower head, and start the optical probe integrated on the silicon wafer through software wireless control to capture images of the focus ring and the air shower head. The images are collected and stored in the collection module integrated in the silicon wafer, and the wireless transmission module communicates with the host computer I / O module and transmits the collected data. After processing the data, the processing module of the host computer obtains the height of the focus ring and the hole size of the air shower head, and then infers the corrosion condition of the focus ring and the air shower head and the centering condition of the silicon wafer position.

[0048] Figure 3 A specific flow chart of a control method for detecting the corrosion degree of a spray hole in a shower head according to another specific embodiment of the present invention is shown. Figure 4 The schematic diagram of the second embodiment of the present invention is a schematic diagram of detecting the spray holes in the shower head. Figure 3 as well as Figure 4 The detection of the corrosion degree of the spray hole in the air shower head is described in detail. The present invention discloses a control method for detecting the corrosion degree of the spray hole in the air shower head, comprising the following steps:

[0049] First, enter step S101, based on the shower head image captured by the optical probe module, determine the relative distance d between the center pixels of the two spray holes and the relative size e of the inner diameter of the spray hole. Figure 4 The optical probe module can collect and shoot the specific images of the air shower heads arranged at intervals in the optical probe module in real time, and send them to the host computer for analysis and calculation after shooting. First, any two spray holes are determined, and then the central pixel points of the center positions of the two spray holes are determined. The connection between the two central pixel points is the relative distance d between the central pixels of the two spray holes, and the relative size e of the inner diameter of the spray hole is the diameter of the spray hole reflected in the image.

[0050] Then, enter step S102, and determine the actual distance f between the center holes of the two spray holes based on the center hole distance of the spray holes. This can be determined by the air shower head in the unused product produced in the standard production process.

[0051] Finally, enter step S103, determine the actual size g of the inner diameter of each spray hole, and judge the corrosion degree of the spray hole in the shower head based on the actual size. Those skilled in the art understand that the ratio of the relative distance d between the center pixels of the two spray holes to the actual distance f of the center hole spacing of the two spray holes is the same as the ratio of the relative size e of the inner diameter of the spray hole to the actual distance f of the center hole spacing of the two spray holes. In layman's terms, under standard conditions, the image is magnified by a certain multiple to form a product under standard conditions, and under actual conditions, the relative size e of the inner diameter of the spray hole is magnified by the same multiple to obtain the actual distance f of the center hole spacing of the two spray holes.

[0052] Furthermore, in the step S103, the actual size g of the inner diameter of the spray hole is determined by the following formula:

[0053] Wherein, d is the relative distance between the central pixels of the two spray holes, e is the relative size of the inner diameter of the spray hole, and f is the actual distance between the central holes of the two spray holes.

[0054] Those skilled in the art will appreciate that an optical probe 6 is provided above the silicon wafer 1, and its position can be set arbitrarily, and is usually set near the center. The optical probe 6 shoots an image of an arbitrary circle of spray holes 4 of the shower head 3 upward, and the center pixel distance between any two spray holes 4 can be obtained. Since the center hole spacing of the spray holes 4 is known and does not change with the etching process, the actual distance corresponding to each pixel of the optical probe can be obtained, and then the size and hole spacing of the spray holes 4 obtained by shooting can be calculated, and the corrosion condition of the spray holes 4 in the shower head 3 can be obtained.

[0055] Figure 5 A specific flow chart of a control method for detecting the corrosion and thinning degree of a shower head is shown in another specific embodiment of the present invention. The control method for detecting the corrosion and thinning degree of a shower head comprises:

[0056] First, enter step S201, and determine the actual distance h between the shower head and the optical probe or silicon wafer under standard conditions and the relative distance j between the center pixels of the two spray holes under standard conditions based on pre-calibration; then enter step S202 to determine the relative distance k between the center pixels of the two spray holes under actual conditions; finally, in step S203, determine the actual distance l between the shower head and the optical probe or silicon wafer under actual conditions, and judge the degree of corrosion and thinning of the shower head based on the actual distance l. The principle of this step can refer to the aforementioned Figure 4The difference is that, in this embodiment, it is mainly necessary to determine the actual distance l between the shower head and the optical probe or the silicon wafer. If the calculated result is greater than the actual distance h between the shower head and the optical probe or the silicon wafer under the standard condition, it is determined that the shower head is corroded and thinned. More specifically, the present invention can obtain the relationship between the pixel distance and the object distance in the imaging area of ​​the optical probe through pre-calibration, thereby calculating the distance between the shower head 3 and the optical probe 6 or the silicon wafer 1 according to the hole spacing between the two spray holes 4, and then obtaining the situation that the shower head 3 is corroded and thinned.

[0057] Furthermore, in the step S203, the actual distance l between the air shower head and the optical probe or the silicon wafer in the actual situation is determined by the following formula:

[0058] Among them, h is the actual distance between the air shower head and the optical probe or silicon wafer under standard conditions, j is the relative distance between the center pixels of two spray holes under standard conditions, and l is the actual distance between the air shower head and the optical probe or silicon wafer under actual conditions.

[0059] Figure 6 Another specific embodiment of the present invention is shown in a side cross-sectional view of the focus ring detection, a control method for detecting the degree of corrosion of the focus ring, comprising: setting the detection device at the edge of a silicon wafer, taking an image of the focus ring, determining the distance corresponding to the pixels in the imaging area of ​​the optical probe under standard conditions through pre-calibration, and determining the height of the focus ring under actual conditions through the distance corresponding to the pixels in the imaging area of ​​the optical probe determined under actual conditions and the height of the focus ring under standard conditions.

[0060] like Figure 6 As shown, the optical probe 6 is disposed at the edge of the silicon wafer 1 to capture the image of the focus ring 2. The distance corresponding to the pixel in the imaging area of ​​the optical probe can be obtained by pre-calibration, from which the corresponding height of the focus ring 2 can be calculated to achieve the purpose of detecting the corrosion of the focus ring 2. In such an embodiment, the actual height of the unused, initial, new focus ring 2 is known, the relative height of the new focus ring 2 reflected in the image is known, and the relative height of the focus ring to be detected in the image is known. A person skilled in the art can obtain the actual height of the focus ring to be detected, and then determine the degree of corrosion of the focus ring.

[0061] Figure 7Another specific embodiment of the present invention is shown in a top view of the focus ring detection. The present invention provides a second control method for detecting the centering degree of a silicon wafer, comprising: arranging a plurality of the detection devices on the circumference of the silicon wafer, judging whether the height of the focus ring captured by each optical probe module is consistent according to the imaging effect of near large and far small; if they are consistent, the silicon wafer is aligned with the focus ring, such as Figure 7 As shown, the four detection devices are evenly arranged on the circumference of the silicon wafer, and a larger number of optical probes can also be used to measure the height of the focus ring in the upper, lower, left and right directions respectively. Assuming that the focus ring is brand new and has the same height, due to the imaging effect of near-large and far-small, the difference in the height of the focus ring measured in the upper, lower or left and right directions reflects the degree of alignment between the silicon wafer 1 and the focus ring 2. When the height of the focus ring measured in the upper, lower or left and right directions is the same, the center of the silicon wafer coincides with the center of the focus ring.

[0062] As another preferred variation of the present application, in addition to the above method being able to detect the degree of centering of silicon wafers, the present application also provides a first control method for detecting the degree of centering of silicon wafers, which uses the detection system, including: setting the detection device at the center of the silicon wafer, judging whether the center position of the image captured by the optical probe module and the center of the spray hole set at the center of the spray head overlap, if not, calculating the offset as the degree of centering of the silicon wafer, in such an embodiment, an optical probe 6 is set at the center of the silicon wafer 1, which shoots the spray hole 4 at the center of the spray head 3 upward. When the centers of the silicon wafer 1 and the spray head 3 coincide with each other, the center position of the image captured by the optical probe 6 coincides with the center of the spray hole 4 at the center of the spray head 3. When the two do not coincide, the degree of centering of the silicon wafer can be known by calculating the deviation between the center hole and the center of the optical probe through software.

[0063] The above describes the specific embodiments of the present invention. It should be understood that the present invention is not limited to the above specific embodiments, and those skilled in the art may make various modifications or variations within the scope of the claims, which do not affect the essence of the present invention.

Claims

1. A control method for detecting the corrosion degree of the spray holes in the air shower head, characterized in that: A detection system for integrating an optical probe on a silicon wafer, the detection system comprising: a silicon wafer (1) provided with a detection device (10), a focus ring (2) arranged below the silicon wafer (1) and semi-covering the silicon wafer, an electrostatic chuck (5) arranged below the focus ring (2), and a shower head (3) spaced from the silicon wafer (1) and arranged above the silicon wafer (1), the shower head (3) comprising at least two spray holes (4), wherein the detection device (10) comprises an optical probe module (6), a collection module (7), a transmission module (8) and a first power supply module (9), and in a working state, the optical probe module (6) collects and photographs images of the shower head (3) and the focus ring (2); The detection system further comprises a host computer (11), the host computer (11) comprising an I / O module (111), a processing module (112), and a second power supply module (113), wherein the second power supply module (113) is respectively connected to the I / O module (111), the processing module (112), and the first power supply module (113), and the I / O module (111) is respectively connected to the transmission module (8) and the processing module (112); the substrate of the detection device (10) is a silicon wafer; the size of the detection device (10) is 200 mm or 300 mm; the control method comprises: a: determining the relative distance d between the central pixels of the two spray holes and the relative size e of the inner diameter of the spray holes based on the shower head image captured by the optical probe module; b: determining the actual distance f between the center holes of the two spray holes based on the center hole distance of the spray holes; c: Determine the actual size g of the inner diameter of each of the spray holes, and judge the corrosion degree of the spray holes in the air shower head based on the actual size.

2. The control method according to claim 1, characterized in that: In step c, the actual size g of the inner diameter of the spray hole is determined by the following formula: , where d is the relative distance between the center pixels of the two spray holes, e is the relative size of the inner diameter of the spray hole, and f is the actual distance between the center holes of the two spray holes.

3. A control method for detecting the degree of corrosion and thinning of a shower head, characterized in that: A detection system for integrating an optical probe on a silicon wafer, the detection system comprising: a silicon wafer (1) provided with a detection device (10), a focus ring (2) arranged below the silicon wafer (1) and semi-covering the silicon wafer, an electrostatic chuck (5) arranged below the focus ring (2), and a shower head (3) spaced from the silicon wafer (1) and arranged above the silicon wafer (1), the shower head (3) comprising at least two spray holes (4), wherein the detection device (10) comprises an optical probe module (6), a collection module (7), a transmission module (8) and a first power supply module (9), and in a working state, the optical probe module (6) collects and photographs images of the shower head (3) and the focus ring (2); The detection system further comprises a host computer (11), the host computer (11) comprising an I / O module (111), a processing module (112), and a second power supply module (113), wherein the second power supply module (113) is respectively connected to the I / O module (111), the processing module (112), and the first power supply module (113), and the I / O module (111) is respectively connected to the transmission module (8) and the processing module (112); the substrate of the detection device (10) is a silicon wafer; the size of the detection device (10) is 200 mm or 300 mm; the control method comprises: i: based on the pre-calibration, the actual distance h between the shower head and the optical probe or silicon wafer under standard conditions and the relative distance j between the center pixels of the two shower holes under standard conditions; ii: Determine the relative distance k between the center pixels of two spray holes in actual situations; iii: Determine the actual distance l between the shower head and the optical probe or the silicon wafer in actual conditions, and judge the extent of corrosion and thinning of the shower head based on the actual distance l.

4. The control method according to claim 3, characterized in that: In step iii, the actual distance l between the air shower head and the optical probe or the silicon wafer in the actual situation is determined by the following formula: , wherein h is the actual distance between the air shower head and the optical probe or silicon wafer under standard conditions, j is the relative distance between the center pixels of two spray holes under standard conditions, and l is the actual distance between the air shower head and the optical probe or silicon wafer under actual conditions.

5. A control method for detecting the degree of corrosion of a focusing ring, characterized in that: A detection system for integrating an optical probe on a silicon wafer, the detection system comprising: a silicon wafer (1) provided with a detection device (10), a focus ring (2) arranged below the silicon wafer (1) and semi-covering the silicon wafer, an electrostatic chuck (5) arranged below the focus ring (2), and a shower head (3) spaced from the silicon wafer (1) and arranged above the silicon wafer (1), the shower head (3) comprising at least two spray holes (4), wherein the detection device (10) comprises an optical probe module (6), a collection module (7), a transmission module (8) and a first power supply module (9), and in a working state, the optical probe module (6) collects and photographs images of the shower head (3) and the focus ring (2); The detection system further comprises a host computer (11), the host computer (11) comprising an I / O module (111), a processing module (112), and a second power supply module (113), wherein the second power supply module (113) is respectively connected to the I / O module (111), the processing module (112), and the first power supply module (113), and the I / O module (111) is respectively connected to the transmission module (8) and the processing module (112); the substrate of the detection device (10) is a silicon wafer; the size of the detection device (10) is 200 mm or 300 mm; the control method comprises: arranging the detection device at the edge of a silicon wafer, capturing an image of a focus ring, determining the distance corresponding to pixels in an imaging area of ​​an optical probe under standard conditions by pre-calibration, and determining the height of the focus ring under actual conditions by the distance corresponding to pixels in the imaging area of ​​the optical probe determined under actual conditions and the height of the focus ring under standard conditions.

6. A first control method for detecting the centering degree of a silicon wafer, characterized in that: A detection system for integrating an optical probe on a silicon wafer, the detection system comprising: a silicon wafer (1) provided with a detection device (10), a focus ring (2) arranged below the silicon wafer (1) and semi-covering the silicon wafer, an electrostatic chuck (5) arranged below the focus ring (2), and a shower head (3) spaced from the silicon wafer (1) and arranged above the silicon wafer (1), the shower head (3) comprising at least two spray holes (4), wherein the detection device (10) comprises an optical probe module (6), a collection module (7), a transmission module (8) and a first power supply module (9), and in a working state, the optical probe module (6) collects and photographs images of the shower head (3) and the focus ring (2); The detection system further comprises a host computer (11), the host computer (11) comprises an I / O module (111), a processing module (112), and a second power supply module (113), wherein the second power supply module (113) is respectively connected to the I / O module (111), the processing module (112), and the first power supply module (113), and the I / O module (111) is respectively connected to the transmission module (8) and the processing module (112); the substrate of the detection device (10) is a silicon wafer; the size of the detection device (10) is 200 mm or 300 mm; the control method comprises: setting the detection device at the center of the silicon wafer, judging whether the center position of the image captured by the optical probe module and the center of the spray hole set at the center of the spray head overlap, and if not, calculating the offset as the centering degree of the silicon wafer.

7. A second control method for detecting the centering degree of a silicon wafer, characterized in that: A detection system for integrating an optical probe on a silicon wafer, the detection system comprising: a silicon wafer (1) provided with a detection device (10), a focus ring (2) arranged below the silicon wafer (1) and semi-covering the silicon wafer, an electrostatic chuck (5) arranged below the focus ring (2), and a shower head (3) spaced from the silicon wafer (1) and arranged above the silicon wafer (1), the shower head (3) comprising at least two spray holes (4), wherein the detection device (10) comprises an optical probe module (6), a collection module (7), a transmission module (8) and a first power supply module (9), and in a working state, the optical probe module (6) collects and photographs images of the shower head (3) and the focus ring (2); The detection system also includes a host computer (11), the host computer (11) includes an I / O module (111), a processing module (112), and a second power supply module (113), wherein the second power supply module (113) is respectively connected to the I / O module (111), the processing module (112) and the first power supply module (113), and the I / O module (111) is respectively connected to the transmission module (8) and the processing module (112); the substrate of the detection device (10) is a silicon wafer; the size of the detection device (10) is 200 mm or 300 mm; the control method includes: arranging a plurality of the detection devices on the circumference of the silicon wafer, judging whether the height of the focus ring captured by each optical probe module is consistent according to the imaging effect of near large and far small, and if they are consistent, aligning the silicon wafer with the focus ring.

Images