Semiconductor component burn-in test module and burn-in test device
By introducing external transmission components into the semiconductor component pre-firing test module, the length and number of copper foil wiring in the pre-firing plate are reduced, and the high temperature is dispersed to both sides, the cost and high temperature problems during high-power pre-firing tests in the prior art are solved, and a more efficient and economical pre-firing test is achieved.
Patent Information
- Application Number
- CN202010811496.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2020-08-13
- Publication Date
- 2025-02-28
- Estimated Expiration
- 2040-08-13
AI Technical Summary
During the high-power pre-burning test device of the existing semiconductor component pre-burning test, the power transmission method passes through multiple printed circuit boards, resulting in an increase in copper foil circuit, an increase in board area, and an increase in cost, and electromagnetic interference and high temperature problems are prone to occur.
A semiconductor component pre-fired test module is designed, including a pre-fired plate and an external transmission element. The external transmission element is arranged on both sides of the pre-fired plate, conducting power through conductive strips and cables, reducing the length and number of copper foil wiring in the pre-fired plate, and reducing the high temperature problem by dispersing high temperature to both sides.
The cost of pre-burning plate is reduced, the high temperature generated by high-power power transmission is reduced, and the pre-burning power is increased without changing the pre-burning plate design, which is convenient for repairing and replacing external transmission components, and reducing labor costs.
Smart Images

Figure 00000000_0000_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to a burn-in test module and a burn-in test device thereof, and more particularly to a semiconductor element burn-in test module and a burn-in test device thereof which are suitable for performing a burn-in test on a semiconductor element. Background Art
[0002] At present, some electronic components or chip packages on the market, such as integrated circuits, are often installed in the form of miniaturized electronic components such as chips in a circuit composed of several main circuit components to form the function of a continuous and complete circuit. Among them, in order to ensure the reliability of the integrated circuit module during use, the chips installed and used in the integrated circuit module must undergo various tests before they are installed or used. In other words, the manufactured chips are tested to check whether the chips can work normally, so as to ensure the reliability and yield of the chips, so as to screen and eliminate defective chips.
[0003] Burn-in testing is to make the chip work under strict conditions of high temperature and high pressure, so that the defective chip will fail early (Early Failure). For example, some multi-layer metal wires of a chip may be poorly made and will not break. After being sold to customers, it may fail after one month of use. If there are too many such cases, the company's reputation will be damaged, and returns will also cause financial losses. Therefore, before leaving the factory, it is tested under strict conditions of high temperature and high pressure to make the poorly made products fail early, and these defective products are screened out first.
[0004] Existing high-performance chips, such as SOC chips (System on Chip) that integrate at least two chips with different functions in one IC, field programmable gate array (FPGA) chips with high computing and control capabilities, or 5G base station communication chips, must consume large power. Therefore, when pre-burning tests are performed on multiple chips at the same time, the power supply (PowerSupply) must supply high-power electricity. However, such high-power electricity cannot be transmitted through the printed circuit board (PCB), and must use very thick transmission cables (cables), which makes testing very difficult.
[0005] Generally, semiconductor component burn-in test equipment can only provide 2 kilowatts (2kW) of burn-in power, and the power is transmitted from the driver board to the extension card and finally to the burn-in board. Figure 11 is a schematic diagram of a semiconductor component burn-in test device of the prior art. The prior semiconductor component burn-in test device includes: a burn-in board 90, an adapter card 86, and a driver module 80. The driver module 80 is electrically connected to the burn-in board 90 via the adapter card 86. The driver module 80 has a power supply 85. The power provided by the power supply 85 is transmitted to the adapter card 86 via multiple printed circuit boards (PCBs) on the driver module 80, and then transmitted to the burn-in board 90. That is, the circuit signal transmission and the high-power electricity required for burn-in are transmitted from the multiple printed circuit boards on the driver module 80 to the burn-in board 90. Therefore, the copper foil circuit in the printed circuit board will increase and thicken, resulting in an increase in the required area of the printed circuit board and a relatively increased cost.
[0006] Therefore, if you want to develop a higher power burn-in board, you need to pay attention to the following items.
[0007] 1. During high-power burn-in, when the power transmission method is transmitted through multiple printed circuit boards, due to the need for high-power transmission, the copper foil circuit in the printed circuit board will increase and thicken, and the number of holes will increase, resulting in an increase in the required area of the printed circuit board and a relatively higher cost, which will also affect the impedance matching of the signal.
[0008] 2. Multiple printed circuit boards are connected, and electromagnetic interference under high current can easily cause heat or even burn if the contact is poor, and the transmission distance is also prone to power loss. Therefore, the above-mentioned existing semiconductor component burn-in test device, which transmits power through multiple printed circuit boards, is not very ideal and there is still room for improvement. Summary of the invention
[0009] In view of this, the inventor, in the spirit of active invention and creation, proposed a semiconductor component burn-in test module and a burn-in test device thereof that can solve the above-mentioned problems. After several studies and experiments, the present invention was finally completed.
[0010] The main purpose of the present invention is to provide a semiconductor component burn-in test module and a burn-in test device thereof. The present invention can reduce the length and number of copper foil wiring in the burn-in board for transmitting electricity, reduce the cost of the burn-in board, and disperse the high temperature generated by high-power electricity to both sides of the burn-in board, which can also reduce the high temperature generated by the burn-in board transmitting high-power electricity. In addition, if the burn-in power is to be increased in the future, that is, the wattage of the power supply for power transmission needs to be increased, the use of the external power transmission element of the present invention does not require changing the design of the burn-in board, and the need to increase the burn-in power of the burn-in board can be achieved by directly replacing the external power transmission element. In addition, the external power transmission element of the present invention can facilitate engineering personnel to check the use status of the positive and negative electric wires and determine whether they need to be repaired or replaced, that is, it is very convenient to replace or repair the external power transmission element, which can greatly reduce labor costs.
[0011] To achieve the above-mentioned purpose, the semiconductor component burn-in test module of the present invention includes: a burn-in board and an external power transmission element. The burn-in board has at least two burn-in seats, and the at least two burn-in seats can be used to place at least two chips to be tested; the external power transmission element is arranged on the corresponding two sides of the burn-in board, and the external power transmission element includes at least two conductive parts and at least two terminal seats; the burn-in board has at least two wirings electrically connected to the external power transmission element, which are used to transmit power to the at least two burn-in seats of the burn-in board through the at least two terminal seats and the at least two conductive parts.
[0012] To achieve the above-mentioned purpose, the semiconductor device burn-in test device of the present invention includes: at least two burn-in boards, at least two interface boards, at least two drive modules, and at least two external power transmission components. Each burn-in board has at least two burn-in sockets, and the at least two burn-in sockets can be used to place at least two chips; each interface board is electrically connected to each burn-in board, and each interface board has a high-power power supply, and the high-power power supply can be used to provide the power required by each burn-in board; each drive module is electrically connected to each interface board, and the drive module has a component power board, and the component power board can be used to provide the power required by the drive module; each external power transmission component is electrically connected to each interface board, and each external power transmission component is arranged on the corresponding two sides of each burn-in board, and each external power transmission component includes at least two conductive elements and at least two terminal seats, and each burn-in board has at least two wirings electrically connected to each external power transmission component, so as to transmit power from the high-power power supply of each interface board to the at least two burn-in sockets of each burn-in board through at least two terminal seats and at least two conductive elements.
[0013] The semiconductor component burn-in test module may further include a frame, the external power transmission element is disposed on the frame, and the burn-in board is disposed in the frame. In addition, the frame may further include at least two connected transverse brackets and at least two longitudinal brackets, and the burn-in board is placed on the at least two transverse brackets and at least two longitudinal brackets.
[0014] The frame may have at least two partition frames, each partition frame forming at least two grooves, and the at least two grooves may be used to place at least two transverse wires and at least two longitudinal wires of the external power transmission element, so as to ensure that adjacent transverse wires and longitudinal wires can maintain a specific spacing to prevent the generation of inductive impedance.
[0015] The at least two transverse wires and the at least two longitudinal wires of the external power transmission element form a positive wire and a negative wire, and the positive wire and the negative wire are respectively arranged on both sides of the pre-burned plate. Therefore, the external power transmission element can be easily repaired and replaced.
[0016] The at least two conductive members of the external power transmission element may be conductive bars or cables.
[0017] The above-mentioned external power transmission component may also include at least one protective cover, which can be used to cover the external power transmission element to isolate electromagnetic waves from interfering with the circuit signals of the burn-in board, and can also prevent operators from accidentally touching the horizontal and vertical wires of the external power transmission element during testing operations.
[0018] The interface board is arranged on at least two terminal ports for being electrically connected to the at least two terminal seats of each external power transmission element.
[0019] Each terminal seat of the external power transmission element and each terminal port of the interface board may have at least two spring pin connectors. The at least two spring pin connectors are in the form of a male seat and a female seat. The two can be plugged into each other for electrical connection to increase the service life of each terminal seat and each terminal port. The present invention adopts the design of spring pin connectors, which is also more suitable for conducting high-wattage electricity.
[0020] The component power board and the driving module can respectively provide the power signal of the at least two chips and the I / O (input / output) test signal to the burn-in board.
[0021] Each of the burn-in boards and each of the interface boards may have a card edge connector for electrically connecting to each other, and transmitting the power signal and I / O test signal of the component power board and the driver module to each of the burn-in boards through each of the interface boards.
[0022] The above summary and the following detailed description are exemplary in nature and are intended to further illustrate the scope of protection of the present invention. Other purposes and advantages of the present invention will be described in the subsequent description and illustrations. BRIEF DESCRIPTION OF THE DRAWINGS
[0023] Figure 1 A schematic diagram of a semiconductor component burn-in test device in the prior art is schematically shown;
[0024] Figure 2 A schematic perspective view of a semiconductor component burn-in test device according to a first preferred embodiment of the present invention is shown;
[0025] Figure 3 A schematic perspective view of a semiconductor component burn-in test module according to a first preferred embodiment of the present invention is shown;
[0026] Figure 4 A single-side stereoscopic view schematically shows an external power transmission element of a semiconductor element burn-in test module according to a first preferred embodiment of the present invention;
[0027] Figure 5Schematically showing another single-side stereoscopic view of the external power transmission element of the semiconductor element burn-in test module according to the first preferred embodiment of the present invention;
[0028] Fig. 6A A schematic perspective view of a female terminal seat of an external power transmission element of a semiconductor element burn-in test module according to a first preferred embodiment of the present invention is shown;
[0029] Figure 6B A schematic perspective view of a male terminal seat of an external power transmission element of a semiconductor element burn-in test module according to a first preferred embodiment of the present invention is shown;
[0030] Figure 7 A schematic perspective view of a semiconductor component burn-in test module according to a second preferred embodiment of the present invention is shown;
[0031] Figure 8 A schematic perspective view of a semiconductor component burn-in test module according to a third preferred embodiment of the present invention is shown;
[0032] Fig. 9 A perspective view schematically shows a semiconductor component burn-in test module according to a fourth preferred embodiment of the present invention.
[0033] Description of the accompanying symbols:
[0034] Burn-in test device 10; drive module 11; interface board 12; component power board 13; high power supply 15; terminal port 16; card edge connector 17; burn-in test module 20, 201, 202, 203; burn-in seat 21; burn-in board 22; wiring 25; external power transmission component 30, 301, 302, 303; conductive strip 31; screw 311; cable 32; crimping head 321; screw 322; terminal seat 33; spring pin connector 331; spring pin connector 332; card edge connector 34; frame 35; horizontal bracket 351; vertical bracket 352; partition frame 36; groove 361; protective cover 38; drive module 80; power supply 85; adapter card 86; burn-in board 90 DETAILED DESCRIPTION
[0035] In order to make the objectives, technical solutions and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
[0036] Please refer to Figure 2 and Figure 3 , which are respectively a three-dimensional schematic diagram of a semiconductor device burn-in test device and a three-dimensional diagram of a semiconductor device burn-in test module according to a first preferred embodiment of the present invention. The semiconductor device burn-in test device 10 of this embodiment can be equipped with at least two burn-in test modules 20, and can simultaneously perform a burn-in test on a semiconductor device via at least two burn-in test modules 20, such as Figure 2 As shown, the burn-in test device 10 has at least two interface boards 12 , each of which has at least one high-power power supply 15 and two terminal ports 16 . Each interface board 12 can be electrically connected to each burn-in test module 20 to perform testing.
[0037] First, the structure of the semiconductor device burn-in test module 20 is described. Figure 3 As shown, each burn-in test module 20 includes: a burn-in board 22, two protective covers 38, and an external power transmission element 30. The burn-in board 22 has at least two burn-in seats 21, and the at least two burn-in seats 21 can be used to place at least two chips. The external power transmission element 30 is arranged on the corresponding two sides of the burn-in board 22, and the external power transmission element 30 includes at least two conductive parts and two terminal seats 33. In this embodiment, the at least two conductive parts refer to at least two conductive strips 31 and at least two cables 32.
[0038] In addition, the burn-in board 22 has at least two wirings 25 electrically connected to the at least two conductive members of the external power transmission element 30. Therefore, the external power transmission element 30 can transmit power from the high-power power supply 15 on the interface board 12 of the burn-in test device 10 to the at least two burn-in sockets 21 of the burn-in board 22 through the terminal seat 33, at least two conductive strips 31 and at least two cables 32, and at least two wirings 25, respectively, to provide the high-ampere current, fan and heater power required for the burn-in test. In addition, the circuit structure electrically connected by the card edge connector 17 of the interface board 12 and the card edge connector 34 of the burn-in board 22 is only used for circuit signal transmission between the drive module of the burn-in test device 10 and the burn-in board 22, and does not provide the power required for the burn-in of the burn-in board 22. In this embodiment, each burn-in board 22 has six burn-in sockets 21.
[0039] In this embodiment, the external power transmission element 30 is disposed on a frame 35, and the frame 35 has at least two connected transverse brackets 351 and at least two longitudinal brackets 352, and the burn-in board 22 is disposed on the at least two transverse brackets 351 and at least two longitudinal brackets 352 in the frame 35. Figure 4 The frame 35 has at least two partition frames 36, each partition frame 36 forms at least two grooves 361, and each groove 361 can be used to place the at least two conductive strips 31 to ensure that adjacent conductive strips 31 can maintain a specific spacing to prevent the generation of inductive impedance.
[0040] Please refer to Figure 4 and Figure 5, which are respectively one side and the other side stereograms of the external power transmission element of the semiconductor element burn-in test module of the first preferred embodiment of the present invention. The at least two conductive strips 31 and the at least two cables 32 of the external power transmission element 30 of this embodiment form a positive wire and a negative wire, and the at least two wirings 25 on the burn-in board 22 form a positive wiring and a negative wiring. The positive wire and the negative wire are respectively arranged on both sides of the burn-in board 22, that is, a positive electrode and a negative electrode are respectively formed on both sides of the burn-in board 22. Therefore, the use length of the power wiring 25 in the burn-in board 22 can be reduced, and the high temperature generated by the burn-in board 22 transmitting high-power electricity can be reduced. In this embodiment, both sides of the external power transmission element 30 are covered with a protective cover 38 to isolate electromagnetic waves from interfering with the circuit signal of the burn-in test module 20, and can also prevent the operator from accidentally touching the at least two conductive strips 31 and the at least two cables 32 of the external power transmission element 30 during the test operation. In the first preferred embodiment, crimping joints 321 and screws 322 are provided at both ends of the cable 32 , and the cable 32 can be respectively locked and fixed between the conductive strip 31 and the pre-burned plate 22 , so as to facilitate the maintenance or replacement of the pre-burned plate 22 .
[0041] Please refer to Fig. 6A and Figure 6B , which are three-dimensional diagrams of the female terminal block and the male terminal block of the external power transmission element of the semiconductor element pre-burn-in test module of the first preferred embodiment of the present invention. Fig. 6A As shown, the terminal base 33 of the external power transmission element 30 has at least two female spring pin connectors 332. Figure 6B As shown, the terminal seat 33 of the external power transmission element 30 has at least two male spring pin connectors 331, and both sides of the interface board 12 of the burn-in test device 10 also have terminal ports 16 correspondingly plugged and electrically connected to the at least two female spring pin connectors 332 and the at least two male spring pin connectors 331. Therefore, the two terminal ports 16 of the interface board 12 of the burn-in test device 10 can be electrically connected to the two terminal seats 33 of the external power transmission element 30 of the burn-in test module 20. The terminal seat 33 of this embodiment adopts the spring pin connectors 331, 332, which can increase the service life of each terminal seat 33 and each terminal port 16.
[0042] Refer to Figure 2 and Figure 3The semiconductor device burn-in test device 10 of the present embodiment includes: at least two burn-in boards 22, at least two interface boards 12, at least two drive modules 11 and at least two external power transmission elements 30. Each burn-in board 22 has six burn-in seats 21, and the six burn-in seats 21 can be used to place at least two chips. Each interface board 12 is electrically connected to each burn-in board 22, and each interface board 12 has a high-power power supply 15 to provide the power required by each burn-in board 22. Each drive module 11 is electrically connected to each interface board 12, and the drive module 11 has a component power board 13 to provide the power required by the drive module 11.
[0043] Among them, each external power transmission element 30 is electrically connected to each interface board 12, and each external power transmission element 30 is arranged on the corresponding two sides of each pre-burn-in board 22, including at least two conductive strips 31, at least two cables 32 and two terminal seats 33. The pre-burn-in board 22 has at least two wirings 25 electrically connected to the external power transmission element 30, so as to transmit power from the high-power power supply 15 of the interface board 12 to the at least two pre-burn-in seats 21 of each pre-burn-in board 22 via the at least two terminal seats 33, the at least two conductive strips 31 and the at least two cables 32.
[0044] In addition, each component power board 13 and driver module 11 of the burn-in test device 10 respectively provides power signals and I / O test signals of at least two chips on each burn-in board 22 to the burn-in board 22. In the present embodiment, each burn-in board 22 has a female card edge connector 34, and each interface board 12 has a male card edge connector 17. The burn-in board 22 and the interface board 12 can be electrically connected to each other, and the power signals and I / O test signals of the component power board 13 and the driver module 11 of the burn-in test device 10 are transmitted to each burn-in board 22 through each interface board 12.
[0045] Therefore, in the present embodiment, the power signal and the I / O test signal of the burn-in test device 10 are transmitted to each burn-in board 22 through the card edge connector 17 of each interface board 12 and the card edge connector 34 of each burn-in board 22, and the two terminal ports 16 of each interface board 12 of the burn-in test device 10 are electrically connected to the two terminal sockets 33 of the external power transmission element 30 of each burn-in test module 20, which can provide the high ampere current of the burn-in test, the power required by the fan and the heater as the burn-in test of each burn-in board 22, and the electricity of the two is transmitted through different paths.
[0046] Therefore, the semiconductor component burn-in test module 20 and the burn-in test device 10 of the present invention can reduce the length and number of copper foil wiring on the burn-in board 22 of the burn-in test module 20 for transmitting electricity, reduce the cost of the burn-in board 22, and disperse the high temperature generated by high-power electricity to both sides of the burn-in board 22, which can also reduce the high temperature generated by the burn-in board 22 transmitting high-power electricity. In addition, if the burn-in power is to be increased in the future, that is, the wattage of the power supply for power transmission needs to be increased, the use of the external power transmission element 30 of the present invention does not require changing the design of the burn-in board 22, and the need to increase the burn-in power of the burn-in board 22 can be achieved by directly replacing the external power transmission element 30. In addition, the external power transmission element 30 of the present invention can facilitate engineering personnel to check the use status of the positive and negative electric wires and determine whether they need to be repaired or replaced, that is, it is very convenient to replace or repair the external power transmission component 30, which can greatly reduce labor costs.
[0047] Please refer to Figure 7 1 is a three-dimensional diagram of a semiconductor component burn-in test module according to a second preferred embodiment of the present invention. The structure of the conductor component burn-in test module 201 of this embodiment is substantially the same as that of the conductor component burn-in test module 20 of the first embodiment, with the only difference being that at least two conductive parts of the external power transmission element 301 of the conductor component burn-in test module 201 of this embodiment are both cables 32, while at least two conductive parts of the external power transmission element 30 of the conductor component burn-in test module 20 of the first embodiment are cables 32 and conductive strips 31.
[0048] Please refer to Figure 8 3 is a three-dimensional diagram of a semiconductor component burn-in test module according to a third preferred embodiment of the present invention. The structure of the conductor component burn-in test module 202 of this embodiment is substantially the same as that of the conductor component burn-in test module 20 of the first embodiment. The only difference is that at least two conductive parts of the external power transmission element 302 of the conductor component burn-in test module 202 of this embodiment are both conductive strips 31, while at least two conductive parts of the external power transmission element 30 of the conductor component burn-in test module 20 of the first embodiment are cables 32 and conductive strips 31. Furthermore, in this embodiment, one end of the conductive strip 31 is connected to the burn-in board 22, and a screw 311 is provided through the burn-in board 22. The conductive strip 31 can be locked and fixed to the burn-in board 22. In addition to facilitating the maintenance or replacement of the burn-in board 22, the conductive strip 31 can also be closely connected to the wiring 25 of the burn-in board 22 to prevent the burn-in board 22 from being burned due to excessive impedance at the connection between the conductive strip 31 and the burn-in board 22.
[0049] Please refer to Fig. 92 is a three-dimensional diagram of a semiconductor component burn-in test module according to a fourth preferred embodiment of the present invention. The structure of the conductor component burn-in test module 203 of this embodiment is substantially the same as that of the conductor component burn-in test module 201 of the second embodiment. The only difference is that the positive and negative wires formed by the external power transmission element 303 of the conductor component burn-in test module 203 of this embodiment are respectively arranged on the front and back sides of the burn-in board 22, while the positive and negative wires formed by the external power transmission element 301 of the conductor component burn-in test module 201 of the second embodiment are respectively arranged on the front sides of the burn-in board 22.
[0050] The conductor component burn-in test modules 201, 202, 203 of the second, third, and fourth embodiments have the same effect as the conductor component burn-in test module 20 of the first embodiment, that is, they can reduce the length and number of copper foil wiring on the burn-in board 22 of the burn-in test module 20 for transmitting electricity, reduce the cost of the burn-in board 22, and disperse the high temperature generated by high-power electricity to both sides of the burn-in board 22, which can also reduce the high temperature generated by the burn-in board 22 transmitting high-power electricity. In addition, if the burn-in power is to be increased in the future, that is, the wattage of the power supply for power transmission needs to be increased, the external power transmission element 30 of the present invention can be used without changing the design of the burn-in board 22, and the demand for increasing the burn-in power of the burn-in board 22 can be achieved by directly replacing the external power transmission element 30. In addition, the external power transmission element 30 of the present invention can facilitate engineering personnel to check the use status of the positive and negative electric wires and determine whether they need to be repaired or replaced, that is, it is very convenient to replace or repair the external power transmission component 30, which can greatly reduce labor costs.
[0051] The specific embodiments described above further illustrate the objectives, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above description is only a specific embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.
Claims
1. A semiconductor component burn-in test module, comprising: A burn-in plate having at least two burn-in seats for placing at least two chips; an external power transmission element, disposed on two corresponding sides of the burn-in board, comprising at least two conductive members and at least two terminal seats; wherein the burn-in board has at least two wirings electrically connected to the external power transmission element, for transmitting power to the at least two burn-in seats of the burn-in board via the at least two terminal seats and the at least two conductive members; and A frame, the external power transmission element is arranged on the frame, the pre-burned board is arranged in the frame, the frame has at least two connected transverse brackets and at least two longitudinal brackets for placing the pre-burned board, and the frame has at least two partition frames, each partition frame forms at least two grooves for placing at least one of the at least two conductive members.
2. The semiconductor device burn-in test module according to claim 1, wherein: The at least two conductive parts of the external power transmission element form a positive electrode wire and a negative electrode wire, and the positive electrode wire and the negative electrode wire are respectively arranged on two sides of the pre-burning plate.
3. The semiconductor device burn-in test module according to claim 1, wherein: The at least two conductive members of the external power transmission element are conductive bars or cables. 4 . The semiconductor device burn-in test module according to claim 1 , further comprising a protective cover for covering the external power transmission element to isolate electromagnetic interference.
5. The semiconductor device burn-in test module according to claim 1, wherein: Each terminal block has at least two spring pin connectors.
6. A semiconductor component burn-in test device, comprising: At least two burn-in boards, each of which has at least two burn-in seats for placing at least two chips; At least two interface boards, each of which is electrically connected to each of the burn-in boards, and each of which has a high-power power supply for providing power required by each of the burn-in boards; At least two driving modules, each of which is electrically connected to each interface board, and each of which has a component power board for providing power required by each of the driving modules; At least two external power transmission elements, each of which is electrically connected to each interface board, and each of which is disposed on two corresponding sides of each burn-in board, and includes at least two conductive members and at least two terminal seats, and each burn-in board has at least two wirings electrically connected to each external power transmission element, so as to transmit power from the high-power power supply of each interface board to the at least two burn-in seats of each burn-in board via the at least two terminal seats and the at least two conductive members; and At least two frames, each external power transmission element is arranged on each frame, each pre-burned board is arranged in each frame, each frame has at least two connected horizontal brackets and at least two longitudinal brackets for placing each pre-burned board, each frame has at least two partition frames, each partition frame forms at least two grooves for placing at least one of the at least two conductive members.
7. The semiconductor device burn-in test device according to claim 6, wherein: The at least two conductive members of each external power transmission element form a positive electrode wire and a negative electrode wire, and the positive electrode wire and the negative electrode wire are respectively arranged on two sides of each pre-burned plate.
8. The semiconductor device burn-in test device according to claim 6, wherein: The at least two conductive members of each external power transmission element are conductive bars or cables. 9 . The semiconductor device burn-in test device according to claim 6 , further comprising at least two protective covers for covering the at least two external power transmission components to isolate electromagnetic interference.
10. The semiconductor device burn-in test device according to claim 6, wherein: Each interface board is provided with at least two terminal ports electrically connected to the at least two terminal seats of each external power transmission element.
11. The semiconductor device burn-in test device according to claim 6, wherein: The at least two terminal seats and the at least two terminal ports are multiple spring pin connectors to increase the service life of each terminal seat and each terminal port.
12. The semiconductor device burn-in test device according to claim 6, wherein: Each component power board and each driving module respectively provide power signals of the at least two chips and I / O test signals to each burn-in board.
13. The semiconductor device burn-in test device according to claim 6, wherein: Each of the burn-in boards and each of the interface boards respectively has a card edge connector for electrically connecting to each other, and transmitting the power signal and I / O test signal of each component power board and each driving module to each of the burn-in boards through each of the interface boards.
Citation Information
Patent Citations
Semiconductor component burn-in test module and its burn- in test equipment
TWI749690B
Component for testing device for electronic component and testing method of the electronic component
US20090302876A1
System for burn-in testing of electronic devices
US6815966B1