Control method of cooling gas pipeline, process chamber and semiconductor process equipment

Abstract

The invention discloses a control method of a cooling gas pipeline, a process chamber and semiconductor process equipment. The method comprises the following steps: keeping a dry pump, a first valve, a third valve and a fourth valve in an open state in a continuous process by using a process chamber, introducing cooling gas into a main pipeline, controlling a pressure controller to control the pressure according to a set pressure, and when a wafer needs to be subjected to electrostatic adsorption, starting the main pipeline; the method comprises the following steps of S1, controlling an electrostatic chuck to perform electrostatic adsorption on a wafer; s2, a second valve is opened; and S3, controlling the pressure controller to control the pressure according to the set pressure, and enabling part of the cooling gas to flow into the electrostatic chuck through the first branch pipeline so as to cool the wafer. According to the invention, the time of the wafer adsorption process can be shortened, and the probability of wafer deviation caused by wafer adsorption in the long-time continuous process can be reduced.

Description

technical field

[0001] The invention belongs to the field of semiconductor manufacturing equipment, and more specifically relates to a control method of a cooling gas pipeline, a process chamber and semiconductor process equipment. Background technique

[0002] During the normal process of the semiconductor etching machine, the wafer (Wafer) is first attracted (Chuck) to the surface of the ESC by the electrostatic force of the inner electrode of the electrostatic chuck (ESC, ElectroStatic Chuck). Since the process is to achieve the purpose of etching by bombarding the surface of the wafer with plasma (Plasma), a large amount of heat will be generated on the wafer at this time. If this heat is not removed in time, the temperature of the wafer will rise rapidly, which will eventually cause the etch rate and uniformity to deviate from the specification. At this time, helium (He) needs to be introduced into the electrostatic chuck, and the gas will be evenly blown and attached ...

Examples

Embodiment 1

[0050] This embodiment proposes a method for controlling the cooling gas pipeline of a semiconductor process chamber, wherein the structure of the cooling gas pipeline involved in the present invention is the same as that of the existing etching machine helium pipeline, specifically as follows Figure 5 As shown, the cooling gas pipeline includes a main pipeline 1, a first branch pipeline 2, a second branch pipeline 3 and a third branch pipeline 4. One end of the first branch pipeline 2 is connected to the main pipeline 1, and the other end is connected to the static electricity in the process chamber. Chuck 11, one end of the second branch pipeline 3 is connected to the main pipeline 1, and the other end is connected to the dry pump 12, the main pipeline 1 is provided with a first valve 5 and a pressure controller 10, and the first branch pipeline 2 is provided with a second valve 6. The second branch pipeline 3 is provided with a third valve 7 and a fourth valve 8 in sequence...

Embodiment 2

[0076] This embodiment proposes a semiconductor process chamber, including an electrostatic chuck, a cooling gas pipeline for feeding cooling gas to the electrostatic chuck, and a control unit. The control unit is used to implement the cooling gas of the semiconductor process chamber in Embodiment 1. Pipeline control methods.

[0077] Wherein the cooling gas pipeline is in the above-mentioned embodiment Figure 5 In the cooling gas pipeline shown, the control unit can be a lower computer, and the control mode of all pneumatic solenoid valves is that the lower computer sends DO commands to the relevant pneumatic solenoid valves to open or close.

Embodiment 3

[0079] This embodiment proposes a semiconductor process equipment, including the semiconductor process chamber of the second embodiment.

[0080] Wherein, the semiconductor process equipment may be semiconductor process equipment with a cooling gas pipeline, such as an etching machine.

technical field

[0001] The invention belongs to the field of semiconductor manufacturing equipment, and more specifically relates to a control method of a cooling gas pipeline, a process chamber and semiconductor process equipment. Background technique

[0002] During the normal process of the semiconductor etching machine, the wafer (Wafer) is first attracted (Chuck) to the surface of the ESC by the electrostatic force of the inner electrode of the electrostatic chuck (ESC, ElectroStatic Chuck). Since the process is to achieve the purpose of etching by bombarding the surface of the wafer with plasma (Plasma), a large amount of heat will be generated on the wafer at this time. If this heat is not removed in time, the temperature of the wafer will rise rapidly, which will eventually cause the etch rate and uniformity to deviate from the specification. At this time, helium (He) needs to be introduced into the electrostatic chuck, and the gas will be evenly blown and attached ...

Examples

Embodiment 1

[0050] This embodiment proposes a method for controlling the cooling gas pipeline of a semiconductor process chamber, wherein the structure of the cooling gas pipeline involved in the present invention is the same as that of the existing etching machine helium pipeline, specifically as follows Figure 5 As shown, the cooling gas pipeline includes a main pipeline 1, a first branch pipeline 2, a second branch pipeline 3 and a third branch pipeline 4. One end of the first branch pipeline 2 is connected to the main pipeline 1, and the other end is connected to the static electricity in the process chamber. Chuck 11, one end of the second branch pipeline 3 is connected to the main pipeline 1, and the other end is connected to the dry pump 12, the main pipeline 1 is provided with a first valve 5 and a pressure controller 10, and the first branch pipeline 2 is provided with a second valve 6. The second branch pipeline 3 is provided with a third valve 7 and a fourth valve 8 in sequence...

Embodiment 2

[0076] This embodiment proposes a semiconductor process chamber, including an electrostatic chuck, a cooling gas pipeline for feeding cooling gas to the electrostatic chuck, and a control unit. The control unit is used to implement the cooling gas of the semiconductor process chamber in Embodiment 1. Pipeline control methods.

[0077] Wherein the cooling gas pipeline is in the above-mentioned embodiment Figure 5 In the cooling gas pipeline shown, the control unit can be a lower computer, and the control mode of all pneumatic solenoid valves is that the lower computer sends DO commands to the relevant pneumatic solenoid valves to open or close.

Embodiment 3

[0079] This embodiment proposes a semiconductor process equipment, including the semiconductor process chamber of the second embodiment.

[0080] Wherein, the semiconductor process equipment may be semiconductor process equipment with a cooling gas pipeline, such as an etching machine.

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