Gas supply module and substrate processing device including the same

Abstract

The present invention relates to a gas supply module and a technology of a substrate processing device including the same. The gas supply module of this embodiment may include: a first module having a first gas inlet channel for transmitting a first process gas; a second module having a second gas inlet channel for transmitting a second process gas; and a third module, which combines the first module and the second module and separates the first process gas transmitted through the first gas inlet channel and the second process gas transmitted through the second gas inlet channel, respectively, so as to diffuse and distribute the gas supply lines connected to the plurality of substrate processing spaces.

Description

Technical Field

[0001] The present invention relates to a substrate processing device, and more particularly to a gas supply module for supplying gas for substrate processing and a substrate processing device comprising the same. Background Art

[0002] In an existing substrate processing device, for various purposes such as productivity and process uniformity, there is a situation where substrate processing is performed on multiple substrates simultaneously in one process chamber. As an example, the substrate processing device includes: a process chamber having multiple processing spaces for processing multiple substrates; multiple gas injection units arranged on the upper side of the process chamber to inject process gas into each processing space; multiple substrate support units arranged in the process chamber and supporting the substrates to correspond to the multiple gas injection units respectively. In addition, the substrate processing device includes: a gas supply unit that supplies process gas to the multiple gas injection units; and a gas injection unit that branches the process gas supplied from the gas supply unit to the multiple gas injection units respectively.

[0003] At this time, the gas supply part and the gas injection part are connected by a gas supply line. In addition, the gas injection part and a plurality of gas injection parts are connected by a gas branch line respectively.

[0004] However, in the case where the substrate processing apparatus is an apparatus for forming a composite film, different types of process gases are alternately supplied through a gas supply line, so the inside of the gas supply line is not completely purged, thereby increasing particle generation, resulting in a problem of worsening pattern width roughness (line edge roughness, LER).

[0005] In addition, a gas supply line is used to alternately supply a first process gas for depositing a first thin film and a second process gas for depositing a second thin film. Therefore, there is a problem of increasing the purge time after supplying the first process gas and before supplying the second process gas, and after supplying the second process gas and before supplying the first process gas, in order to completely remove the process gas in the gas supply line. Summary of the invention

[0006] (Problem to be solved)

[0007] Embodiments of the present invention provide a gas supply module that can prevent particle generation and improve line edge roughness (LER) and a substrate processing apparatus including the same.

[0008] (Methods to solve the problem)

[0009] The gas supply module of the embodiment of the present invention supplies process gas into a chamber having multiple substrate processing spaces. The gas supply module includes: a lower module, which is formed with multiple first gas supply channels and first gas inlet channels, the multiple first gas supply channels respectively distribute first process gas to the multiple substrate processing spaces, and the first gas inlet channels are used to allow the first process gas to flow into the multiple first gas supply channels; and an upper module, which is combined with the lower module and is formed with multiple second gas supply channels and second gas inlet channels, the multiple second gas supply channels respectively distribute and supply second process gas different from the first process gas to the multiple substrate processing spaces, and the second gas inlet channels are used to allow the second process gas to enter the multiple second gas supply channels.

[0010] A substrate processing device according to an embodiment of the present invention includes: a chamber having a plurality of substrate processing spaces; a plurality of substrate supporting parts respectively arranged in the plurality of substrate processing spaces inside the chamber; a plurality of gas injection parts arranged to correspond to the plurality of substrate supporting parts; and a gas supply module for alternately supplying the first and a second process gas different from the first process gas to the plurality of gas injection parts; the gas supply module includes: a lower module formed with a plurality of first gas supply channels and a first gas inlet channel, the plurality of first gas supply channels respectively distributing the first process gas to the plurality of substrate processing spaces, the first gas inlet channel being used to allow the first process gas to enter the plurality of first gas supply channels; and an upper module combined with the lower module and formed with a plurality of second gas supply channels and a second gas inlet channel, the plurality of second gas supply channels respectively distributing and supplying a second process gas different from the first process gas to the plurality of substrate processing spaces, the second gas inlet channel being used to allow the second process gas to enter the plurality of second gas supply channels.

[0011] In addition, a gas supply module of another embodiment of the present embodiment is configured to supply process gases separately into a chamber having multiple substrate processing spaces, and includes: a first module having a first gas inlet channel for transmitting a first process gas; a second module having a second gas inlet channel for transmitting a second process gas; and a third module, which combines the first module and the second module, and separates the first process gas transmitted through the first gas inlet channel and the second process gas transmitted through the second gas inlet channel, so as to diffuse and distribute them to gas supply lines connected to the multiple substrate processing spaces.

[0012] (Effects of the Invention)

[0013] According to the present embodiment, lines for supplying different kinds of process gases are separately formed, thereby preventing particles from being generated due to the reaction of the process gases, thereby improving line edge roughness (LER).

[0014] In addition, according to the present embodiment, the lines for supplying different types of process gases are separately constructed, and the length of the lines is shortened, thereby shortening the purge time, and further shortening the time required for the entire process. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 is a plan view showing a substrate processing apparatus including a gas supply module according to an embodiment of the present invention.

[0016] Figure 2 It shows cutting along Ⅰ-Ⅰ′ Figure 1 A cross-sectional view of a cross-section of a substrate processing device.

[0017] Figure 3 1 is a perspective view showing an air supply module according to an embodiment of the present invention.

[0018] Figure 4 It shows cutting along II-II′ Figure 3 A cross-sectional view of a cross-section of an air supply module.

[0019] Figure 5 2 is a diagram showing the direction of gas movement in the gas supply module according to the embodiment of the present invention.

[0020] Figure 6 is a three-dimensional diagram of an air supply module according to another embodiment of the present invention.

[0021] Figure 7 It is an exploded perspective view of an air supply module according to another embodiment of the present invention.

[0022] (Explanation of Reference Numerals)

[0023] 10: Substrate processing apparatus 100: Chamber

[0024] 110: substrate support part 120: substrate moving part

[0025] 130: jet part 140: exhaust port

[0026] 150: Exhaust line 160: Vacuum pump

[0027] 200: Air supply module 210: Lower module

[0028] 211: first connecting member 212: second connecting member

[0029] 213: Insertion slot 214: Next door

[0030] 215: Diffusion space 216: First air supply channel

[0031] 217: First air intake channel 220: Upper module

[0032] 221: first connecting member 222: second connecting member

[0033] 223: Insertion slot 224: Next door

[0034] 225: Diffusion space 226: Second air supply channel

[0035] 227: Second air intake passage 300: Air supply pipe

[0036] 251L, 253L, 255L, 257L, 251H, 253H, 255H, 257H: Gas supply line

[0037] 2100: First module 2114: First next door

[0038] 2117: First air inlet channel 2200: Second module

[0039] 2224: Second partition wall 2227: Second air intake passage

[0040] 2300: Third module 2310: Lower area

[0041] 2320: Upper area DETAILED DESCRIPTION

[0042] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0043] Figure 1 is a plan view showing a substrate processing apparatus including a gas supply module according to an embodiment of the present invention; Figure 2 It shows cutting along Ⅰ-Ⅰ′ Figure 1 A cross-sectional view of a cross-section of a substrate processing device.

[0044] Reference Figure 1 and Figure 2 The substrate processing apparatus 10 of the embodiment of the present invention may include: a chamber 100, forming a processing space; a substrate support part 110, disposed inside the chamber 100 and supporting a substrate W; a gas injection part 130, disposed opposite to the substrate support part 110, and injecting a process gas onto the substrate support part 110; and a gas supply module 200, disposed on the upper part of the chamber 100, and supplying a process gas to the gas injection part 130. In addition, the substrate processing apparatus 10 may further include a substrate moving part 120, which is located outside the substrate support part 110 and assists in transporting the substrate.

[0045] The chamber 100 may include a main body 101 with an open upper portion, and a top cover 103 which is openably disposed on the upper portion of the main body 101 .

[0046] A substrate support frame installation groove 105 for configuring the substrate support portion 110 is formed inside the body 101. The substrate support frame installation groove 105 is formed in a shape corresponding to the shape of the substrate support frame 113 described later, such as a circle, and can be formed to have a predetermined depth. For example, the substrate support frame installation groove 105 can be formed with a depth corresponding to the vertical movement range of the substrate support frame 113. With such a structure, the size of the internal space of the chamber 100 can be reduced, the amount of process gas supplied to the inside of the chamber 100 for processing the substrate can be reduced, and the time required to purge the inside of the chamber 100 can be shortened.

[0047] In addition, the substrate support frame mounting groove 105 may be formed with a through hole into which the support shaft 111 of the substrate support portion 110 is inserted. Figure 1 As shown, when a plurality of substrates, for example, four substrates, are processed in the chamber 100 , four substrate support frame mounting grooves 105 may also be formed.

[0048] The four substrate support frame mounting grooves 105 may be formed with exhaust channels (not shown) to communicate with the substrate support frame mounting grooves 105 adjacent to the side, and the exhaust channels are horizontally formed along the bottom of the main body 101; the exhaust channels (not shown) are connected to the exhaust port 140 that passes through the bottom of the main body 101 in the upward and downward directions, and can then be connected to the exhaust line 150 of the vacuum pump 160 connected to the outside.

[0049] A through hole may be formed at the bottom of the main body 101 to insert the rotating shaft 121 constituting the substrate moving part 120. For example, the through hole may be formed at the center of the bottom surface of the main body 101.

[0050] Although not in Figure 1 and Figure 2 Although not shown, a gate (not shown) may be formed at a side of the main body 101 for loading and unloading the substrate W into the chamber 100 .

[0051] The top cover 103 is combined with the upper part of the main body 101 to close the interior of the main body 101. At this time, the top cover 103 can also be formed to cover the entire upper part of the main body 101, such as Figure 2 As shown, it may also be combined with the air injection portion 130 to cover at least a portion of the upper portion of the main body 101 .

[0052] In this embodiment, in order to facilitate the installation and separation of the air-injection unit 130, an insertion port is formed to penetrate the top cover 103 in the vertical direction, and the air-injection unit 130 can be fixed from the top of the top cover 103 through the insertion port, but the present invention is not particularly limited thereto.

[0053] The substrate support part 110 is a structure for supporting the substrate W and may be disposed at the lower side of the chamber 100. The substrate support part 110 may include a substrate support frame 113 for mounting the substrate W and a support shaft 111 connected to the lower part of the substrate support frame 113 to raise and lower the substrate support frame 113.

[0054] Reference Figure 2 The substrate support frame 113 is in the shape of a plate having a predetermined thickness and may have a shape corresponding to the shape of the substrate W. For example, in the case where the substrate W is a circular wafer, the substrate support frame 113 may have a disc shape. Of course, the shape of the substrate support frame 113 is not limited thereto, but may be changed to various shapes.

[0055] The substrate support frame 113 is arranged inside the chamber 100 in a direction parallel to the bottom surface of the main body 101, and the support shaft 111 can be arranged in a direction perpendicular to the bottom surface of the main body 101. The support shaft 111 is connected to a driving tool (not shown) such as an external motor through a through hole formed on the bottom surface of the main body 101, and the substrate support frame 113 can be raised and lowered. At this time, a bellows (not shown) is used to seal between the support shaft 111 and the through hole, thereby preventing the vacuum inside the chamber 100 from being released during the process of processing the substrate.

[0056] Although not in Figure 2 Although not shown, a heating element (not shown) for heating may be disposed inside the substrate support frame 113, and the heating element may be connected to an external power source through a wire (not shown). If power is applied to the heating element, the substrate support frame 113 is heated, thereby heating the substrate W mounted on the upper portion of the substrate support frame 113.

[0057] The substrate support frame 113 not only supports the substrate, but also functions as a lower electrode. That is, in order to form an electric field between the substrate support frame 113 and the gas jet 130, the substrate support frame 113 can function as a lower electrode. For example, an RF power source (not shown) is applied to the gas jet 130, and a ground power source (not shown) is applied to the substrate support frame 113 to form an electric field between the gas jet 130 and the substrate support frame 113, so that plasma can be generated. To this end, a ground electrode (not shown) can be provided inside the substrate support frame 113.

[0058] A plurality of substrate supporting parts 110 may be provided in the chamber 100. For example, four substrate supporting parts 110 may be provided in the chamber 100. At this time, each substrate supporting part 110 may be arranged at a symmetrical point based on the center of the chamber 100. Of course, the number of substrate supporting parts 110 may be less than or more than four.

[0059] When a plurality of substrate supporting parts 110 are provided inside the chamber 100, the substrate moving part 120 may move the substrate W between the substrate supporting parts 110 and the substrate supporting parts 110 in the chamber 100. The substrate moving part 120 may include: a rotating shaft 121 configured to be inserted into a through hole penetrating the bottom of the main body 101; and a turntable 123 horizontally disposed on the upper part of the rotating shaft 121.

[0060] The rotating shaft 121 may be disposed at the center of the plurality of supporting shafts 111 constituting the plurality of substrate supporting parts 110. In addition, the rotating shaft 121 is connected to an external driving means such as a motor to rotate, elevate, and lower the turntable 123. At this time, a bellows (not shown) is used to seal between the rotating shaft 121 and the through-hole, thereby preventing the vacuum inside the chamber 100 from being released during the process of processing the substrate.

[0061] The turntable 123 may be configured in a plate shape having a predetermined thickness, and rotates while supporting the substrate W placed on the substrate support frame 113 , thereby moving the position of the substrate W.

[0062] The gas jet section 130 and the substrate support section 110 inside the chamber 100 are arranged facing each other and spaced apart, and can spray process gas for processing the substrate to the side of the substrate support frame 113. In addition, the gas jet section 130 is connected to an external power source (not shown) and can be used as an upper electrode for generating plasma. For example, RF (Radio Frequency) power is applied to the gas jet section 130, and the substrate support frame 113 is grounded, and then plasma is generated in the reaction space (deposition space) in the chamber 100 using RF. Here, it is described that RF power is applied to the gas jet section to generate plasma in the reaction space, but the process gas can also be plasmatized in the gas jet section and sprayed into the reaction space inside the chamber 100. Of course, the process gas can also be plasmatized outside the chamber 100 and sprayed into the reaction space inside the chamber 100.

[0063] The gas injection part 130 may form the upper part of the chamber 100 together with the top cover 103. The gas injection part 130 may be connected to a single gas supply source that all supplies the same type of process gas, or may be connected to a plurality of gas supply sources that supply different types of process gases. The gas injection part 130 and the substrate support frame 113 face each other and have a similar predetermined area, and may be manufactured into a shower head type having a plurality of injection holes, but is not particularly limited thereto.

[0064] like Figure 1 As shown, a plurality of air injection parts 130 may be provided. For example, four air injection parts 130 may be provided on the top cover 103. At this time, each air injection part 130 is arranged point-symmetrically with respect to the center of the top cover 103. Of course, the air injection part 130 may also be provided to be less than or more than four.

[0065] Reference Figure 1 and Figure 2 The injection unit 130 may include a gas injection member 131 and an air intake module 133 , wherein the air intake module 133 connects the gas injection member 131 and a gas supply line 255 to be described later.

[0066] For example, the gas injection member 131 may include a first surface close to the substrate support frame 113 and a second surface where the gas inlet module 133 is provided. A plurality of injection holes may be formed on the first surface of the gas injection member 131 to inject the process gas onto the substrate support frame 113. In addition, a through hole may be formed on the second surface of the gas injection member 131 to allow the process gas supplied to the gas inlet module 133 to pass through. Of course, the shape of the gas injection member 131 is not limited to Figure 2 Rather than being shown, it can be manufactured into various shapes.

[0067] Reference Figure 1 and Figure 2 The gas supply module 200 may be disposed at an upper portion of the chamber 100 at a distance from the top cover 103. The gas supply module 200 may supply process gas to the corresponding gas injection unit 130 through a plurality of gas supply lines 251, 253, 255, 257.

[0068] The gas supply module 200 may include a lower module 210 and an upper module 220. The lower module 210 and the upper module 220 may have the same shape, but are not particularly limited thereto. In the present embodiment, the types of process gases respectively supplied to the lower module 210 and the upper module 220 of the gas supply module 200 may be different from each other, but are not particularly limited thereto.

[0069] Figure 3 is a perspective view showing an air supply module according to an embodiment of the present invention; Figure 4 It shows cutting along II-II′ Figure 3 A cross-sectional view of a cross-section of an air supply module; Figure 5 2 is a diagram showing the direction of gas movement in the gas supply module according to the embodiment of the present invention.

[0070] The lower module 210 of the gas supply module 200 may include a first combination member 211 and a second combination member 212 combined with the first combination member 211. A partition wall 214 extending in a direction away from the upper side may be formed on a portion of the upper side of the first combination member 211. For example, the partition wall 214 may have a ring shape, but the shape of the partition wall 214 is not particularly limited thereto. When the process gas entering from the first and second air inlet channels 217 and 227 is distributed to the first and second air supply channels 216 and 226, if there is no partition wall 214, it cannot be evenly distributed to the first and second air supply channels 216 and 226, and there may be a possibility that the process gas is concentrated in a part of the air supply channels. As in the present embodiment, if there is a partition wall 214, because the process gas of the partition wall 214 is first diffused in the internal space of the partition wall 214, the process gas can be evenly distributed to all the air supply channels without the phenomenon of being concentrated in a part of the air supply channels.

[0071] An insertion groove 213 may be formed at a lower portion of the second coupling member 212, and the insertion groove 213 corresponds to the partition wall 214 of the first coupling member 211. The depth of the insertion groove 213 is greater than the height of the partition wall 214, and the diameter of the insertion groove 213 may be greater than the diameter of the partition wall 214. Accordingly, a diffusion space 215 may be formed between the inner side wall of the insertion groove 213 and the outer side wall of the partition wall 214, and the process gas may be diffused.

[0072] Reference Figure 3 A plurality of lower discharge grooves H1 for discharging process gas may be formed on the side wall of the insertion groove 213. The plurality of lower discharge grooves H1 may be respectively connected to the corresponding plurality of first gas supply channels 216. The plurality of first gas supply channels 216 may be formed by penetrating the side wall of the insertion groove 213 through the side wall of the second coupling member 212. The plurality of first gas supply channels 216 may be respectively connected to the corresponding gas supply lines.

[0073] In addition, an inlet hole may be formed on the bottom surface of the ring-shaped partition wall 214 of the first coupling member 211 so that the process gas supplied from the gas supply source (not shown) can pass through. The inlet hole may be connected to the first gas inlet passage 217. The gas supply pipe 300L (see Figure 5 ), the air supply pipe 300L is connected to an air supply source (not shown).

[0074] Reference Figure 5The process gas supplied from the gas supply source (not shown) through the gas supply pipe 300L enters the inner space of the partition wall 214 along the first gas inlet channel 217 formed in the first coupling member 211 through the inlet hole formed on the bottom surface of the partition wall 214. The process gas in the inner space of the partition wall 214 can diffuse into the diffusion space 215 through the gap between the upper end of the partition wall 214 and the bottom surface of the insertion groove 213. The process gas diffused into the diffusion space 215 is discharged along the plurality of lower discharge grooves H1 (refer to Figure 3 ) and the plurality of first gas supply channels 216 may supply the process gas to the corresponding gas supply lines 251L, 253L, 255L, 257L. The process gas supplied to the gas supply lines 251L, 253L, 255L, 257L may be supplied to the corresponding gas injection unit 130.

[0075] The upper module 220 of the air supply module 200 may include a first coupling member 221 and a second coupling member 222 coupled to the first coupling member 221. A partition wall 224 extending in a direction away from the upper side may be formed on an upper portion of the first coupling member 221. For example, the partition wall 224 may have a ring shape, but the shape of the partition wall 224 is not particularly limited thereto.

[0076] An insertion groove 223 may be formed at a lower portion of the second coupling member 222, and the insertion groove 223 corresponds to the partition wall 224 of the first coupling member 221. The depth of the insertion groove 223 is greater than the height of the partition wall 224, and the diameter of the insertion groove 223 may be greater than the diameter of the partition wall 224. Accordingly, a diffusion space 225 may be formed between the inner side wall of the insertion groove 223 and the outer side wall of the partition wall 224, and the process gas may be diffused.

[0077] Reference Figure 3 A plurality of upper discharge grooves H2 may be formed on the side wall of the insertion groove 223 to discharge process gas. The plurality of upper discharge grooves H2 may be connected to the corresponding plurality of second gas supply channels 226, respectively. The plurality of second gas supply channels 226 may be formed to penetrate the side wall of the second combining member 222 from the side wall of the insertion groove 223. The plurality of second gas supply channels 226 may be connected to the corresponding gas supply lines, respectively.

[0078] In addition, an inlet hole may be formed on the bottom surface of the ring-shaped partition wall 224 of the first coupling member 221 to allow the process gas supplied from the gas supply source (not shown) to pass through. The inlet hole may be connected to the second gas inlet passage 227. The gas supply pipe 300H (see Figure 5 ) The air supply pipe 300H is connected to an air supply source (not shown).

[0079] Reference Figure 5The process gas supplied from the gas supply source (not shown) through the gas supply pipe 300H enters the inner space of the partition wall 224 through the inlet hole formed on the bottom surface of the partition wall 224 along the second gas inlet channel 227 formed in the first coupling member 221, and the process gas in the inner space of the partition wall 224 can diffuse to the diffusion space 225 through the gap between the upper end of the partition wall 224 and the bottom surface of the insertion groove 223. The process gas diffused to the diffusion space 225 is supplied to the corresponding gas supply lines 251H, 253H, 255H, and 257H along the plurality of upper discharge grooves H2 and the plurality of second gas supply channels 226. The process gas supplied to the gas supply lines 251H, 253H, 255H, and 257H can be supplied to the corresponding gas injection parts 130.

[0080] like Figure 3 As shown, the plurality of first gas supply channels 216 of the lower module 210 of the gas supply module 200 are spaced at equal intervals, and the plurality of second gas supply channels 226 of the upper module 220 can also be spaced at equal intervals. In this way, by forming the first and second gas supply channels 216 and 226 at equal intervals, the first and second process gases can be evenly distributed to the plurality of gas injection portions 130.

[0081] In addition, the first air supply channel 216 of the lower module 210 and the second air supply channel 226 of the upper module 220 are not aligned in the vertical direction, but can be shifted and formed at a predetermined interval. Accordingly, the air supply lines 251L, 253L, 255L, 257L connected to the first air supply channel 216 of the lower module 210 and the air supply lines 251H, 253H, 255H, 257H connected to the second air supply channel 226 of the upper module 220 can be combined with the injection unit 130 without interference.

[0082] In addition, the first air supply channel 216 of the lower module 210 is formed in the second combining member 212 in the shape of a straight line inclined at a predetermined angle from the extension line passing through the center point of the insertion groove 213, and the second air supply channel 226 of the upper module 220 is formed in the fourth combining member in the shape of a straight line inclined at a predetermined angle from the extension line passing through the center point of the insertion groove 223.

[0083] If the first and second gas supply channels 216 and 226 are formed on the same line as the extension line passing through the center point of the corresponding insertion grooves 213 and 223, there is a possibility that the process gas entering from the first and second gas inlet channels 217 and 227 is not fully diffused, but is directly discharged to the first and second gas supply channels 216 and 226, so there is a possibility that the process gas is concentrated in a part of the supply channel. In this embodiment, the first and second gas supply channels 216 and 226 are formed to be inclined at a predetermined angle from the extension line passing through the center point of the corresponding insertion grooves 213 and 223, so that a cyclone-like internal airflow is generated in the diffusion space 215 and 225, and then the process gas entering from the first and second gas inlet channels 217 and 227 can be evenly distributed to the first and second gas inlet channels 217 and 227 after being fully diffused.

[0084] In addition, the gas supply module 200 may include a heater 270 inserted therein. For example, the heater 270 may be disposed between the lower module 210 and the upper module 220, and the heater 270 may be connected to an external power source through a wire (not shown). If power is applied to the heater 270, the process gases supplied to the lower module 210 and the upper module 220, respectively, may be maintained at a predetermined temperature.

[0085] Although not shown, the substrate processing apparatus 10 may further include a controller (not shown). The controller may control driving of the support shaft 111, the rotation shaft 121, the air blowing part 130, a power source, and the like.

[0086] Figure 6 is a three-dimensional diagram of an air supply module according to another embodiment of the present invention; Figure 7 It is an exploded perspective view of an air supply module according to another embodiment of the present invention.

[0087] Reference Figure 6 and Figure 7 The air supply module 200a may include: a first module 2100, a second module 2200 and a third module 2300.

[0088] The first module 2100 may include a first air inlet channel 2117. The first air inlet channel 2117 is connected to a first gas supply source (not shown) and may supply a first process gas to a first space portion d1 formed on an upper surface of the first module 2100 corresponding to a surface facing the third module 2300. Figure 6 and Figure 7 The cross-sectional structure of the air supply module is shown in the form of a stereogram. Figure 6 and Figure 72 shows that the first space portion d1 is semicircular, but in fact it may have a circular, i.e., an annular structure. The first space portion d1 may be defined by the first partition wall 2114 at a predetermined portion of the upper surface of the first module 2100. The first partition wall 2114 may protrude toward the upper surface of the first module 2100 while forming a predetermined height from the surface of the first module 2100.

[0089] The second module 2200 may be located on the upper part of the first module 2100. For example, the second module 2200 is a shape rotated 180° and may have a structure corresponding to the first module 2100. The second module 2200 may include a second air inlet channel 2227, which is connected to a second gas supply source (not shown) to supply a second process gas. The second air inlet channel 2227 may transfer the second process gas to the second space portion d2. The second space portion d2 may be defined by a second partition wall 2224 at a position corresponding to the first space portion d1, and the second partition wall 2224 actually has the same height as the first partition wall 2114, and may protrude toward the lower surface of the second module 2200.

[0090] The third module 2300 is located between the first module 2100 and the second module 2200, and can be combined with the first module 2100 and the second module 2200. The third module 2300 may include: a lower region 2310 facing the first module 2100 and an upper region 2320 facing the second module 2200. The lower region 2310 may face the first module 2100, and the surface facing the first module 2100 has a first gas storage space, and then when the lower region 2310 is combined with the first module 2100, a first insertion groove IH1 may be provided in the gas supply module 200a. The first insertion groove IH1 may be configured to accommodate the size of the first space portion d1. For example, the depth of the first insertion groove IH1 may be greater than the height of the first partition wall 2114. Accordingly, the upper portion of the first partition wall 2114 will not contact the first insertion groove IH1. That is, the first partition wall 2114 has a height lower than the first insertion groove IH1. Thus, the first insertion groove IH1 on both sides with the first partition wall 2114 as the center has a moving channel that can evenly diffuse the process gas. In addition, at least one lower discharge groove H1 connected to the gas supply line can be formed on the side wall of the first insertion groove IH1. For example, the lower discharge grooves H1 can be arranged at equal intervals and connected to the gas supply line ( Figure 3 In the case of , 251L, 253L, 255L, 255L) are tightened, so that the process gas can be supplied to each injection part 130.

[0091] Similarly, the upper region 2320 may face the second module 2200, and have a first gas storage space on the surface facing the first module 2100. When the upper region 2320 and the second module 2200 are combined, a second insertion groove IH2 may be provided in the gas supply module 200a. The second insertion groove IH2 may be configured to accommodate the size of the second space portion d2. For example, the depth of the second insertion groove IH2 may be greater than the height of the second partition wall 2224. Accordingly, the upper surface of the second partition wall 2224 will not contact the second insertion groove IH2. Accordingly, the gas can move freely through the space between the second partition wall 2224 and the second insertion groove IH2, so that the process gas can be evenly diffused in the second insertion groove IH2 on both sides with the second partition wall 2224 as the center. At least one upper discharge groove H2 may be formed on the other side of the side wall of the second insertion groove IH2. For example, the upper discharge grooves H2 may be arranged at equal intervals and are aligned with the gas supply line ( Figure 3 In the case of , 251H, 253H, 255H, 255H) are tightened, and the second process gas can be supplied to each injection part 130.

[0092] A heater 2700 may be provided inside the third module 2300 of the gas supply module 200. The heater 2700 may extend through the integrated space between the first and second insertion slots IH1 and IH2. The heater 2700 of the present embodiment may be a strip-shaped cylindrical heater. As an example, the heater 2700 may be made of a conductive material having a high heating function, and by applying power, the first module 2100 and the second module 2200 may also maintain a predetermined temperature in addition to the first and upper regions 2310 and 2320 of the third module 2300.

[0093] As described above, the gas supply module 200a of the present embodiment is such that the first process gas 2117 supplied from the first gas inlet channel 2117 is uniformly diffused in the first insertion groove IH1 divided by the first partition wall 2114 and can be uniformly supplied to the injection part 130 of each chamber through the gas supply lines 251L, 253L, 255L, 255L fastened to the lower discharge groove H1 formed on the side wall of the first insertion groove IH1.

[0094] Similarly, the gas supply module 200a of the present embodiment is that the first process gas 2117 supplied from the first gas inlet channel 2117 is evenly diffused in the first insertion groove IH1 divided by the first partition wall 2114 and can be evenly supplied to the injection part 130 of each chamber through the gas supply lines 251L, 253L, 255L, 255L fastened to the lower discharge groove H1 formed on the side wall of the first insertion groove IH1.

[0095] As described above, the staff of the technical field to which the present invention belongs should understand that other specific forms can be implemented without changing the technical idea or additional features of the present invention. Therefore, it should only be understood that the embodiments described above are exemplary and non-restrictive in all aspects. The scope of the present invention should be interpreted as, compared with the above detailed description, it should be reflected by the scope of the claims, and all changes or deformations derived from the meaning and scope of the claims and equivalent concepts are included in the scope of the present invention.

Claims

1. A gas supply module for supplying process gas into a chamber having a plurality of substrate processing spaces, comprising: A lower module is formed with a plurality of first gas supply channels and a first gas inlet channel, wherein the plurality of first gas supply channels respectively distribute the first process gas to the plurality of substrate processing spaces, and the first gas inlet channel is used to allow the first process gas to flow into the plurality of first gas supply channels; and an upper module, combined with the lower module, and formed with a plurality of second gas supply channels and a second gas inlet channel, the plurality of second gas supply channels respectively distributing and supplying a second process gas different from the first process gas to the plurality of substrate processing spaces, the second gas inlet channel being used to allow the second process gas to enter the plurality of second gas supply channels, The lower module includes: a first combining member, which is formed with a first ring-shaped partition wall; and a second combining member, which is combined with the first combining member and is formed with a first insertion groove corresponding to the first partition wall; The upper module includes: a third coupling member formed with a second ring-shaped partition wall; and a fourth coupling member coupled to the third coupling member and formed with a second insertion groove corresponding to the second partition wall. The plurality of first air supply channels are formed in the second combining member of the lower module at equal intervals so as to pass through from the side wall of the first insertion groove to the side wall of the second combining member; The plurality of second air supply channels are formed in the fourth combination piece of the upper module at equal intervals to pass through the side wall of the second insertion groove to the side wall of the fourth combination piece, and are arranged in parallel with the first air supply channel. The first air inlet passage is formed in the first combining member of the lower module to communicate with the bottom surface of the first partition wall; and The second air inlet passage is formed in the third coupling member of the upper module to communicate with the bottom surface of the second partition wall.

2. The air supply module according to claim 1, characterized in that: The height and diameter of the first partition wall are smaller than the depth and diameter of the first insertion groove; and The height and diameter of the second partition wall are smaller than the depth and diameter of the second insertion groove.

3. The air supply module according to claim 1, characterized in that: The plurality of second air supply channels are shifted by a predetermined interval to prevent being aligned with the plurality of first air supply channels in a vertical direction.

4. The air supply module according to claim 1, characterized in that: The plurality of first air supply passages are respectively formed to be shifted by a predetermined interval so as to prevent alignment with an extension line passing through a center point of the first insertion slot in a vertical direction, and are formed in the second combining member; The plurality of second air supply passages are respectively formed to be shifted by a predetermined interval so as not to be aligned with an extension line passing through a center point of the second insertion groove in a vertical direction, and are formed in the fourth combining member.

5. The air supply module according to claim 1, characterized in that: The first process gas entering along the first air inlet channel is supplied to the internal space of the first partition wall, and the first process gas in the internal space of the first partition wall passes through the gap between the upper end of the first partition wall and the bottom surface of the first insertion groove to the diffusion space between the outer side wall of the first partition wall and the inner side wall of the first insertion groove.

6. The air supply module according to claim 1, characterized in that: The second process gas entering along the second air inlet channel is supplied to the internal space of the second partition wall, and the second process gas in the internal space of the second partition wall diffuses to the diffusion space between the outer side wall of the second partition wall and the inner side wall of the second insertion groove through the gap between the lower end of the second partition wall and the bottom surface of the second insertion groove.

7. The air supply module according to claim 1, characterized in that: Also includes: The heater is disposed between the lower module and the upper module to heat the first process gas and the second process gas.

8. A gas supply module for supplying process gases into a chamber having a plurality of substrate processing spaces, comprising: A first module having a first gas inlet passage for delivering a first process gas; a second module having a second gas inlet passage for delivering a second process gas; and a third module, which is combined with the first module at the bottom and the second module at the top, and which separates the first process gas transmitted through the first gas inlet channel and the second process gas transmitted through the second gas inlet channel, so as to distribute and supply the first process gas and the second process gas to the sides of the plurality of substrate processing spaces, Wherein, the first module further includes a first partition wall, The first partition wall protrudes upward by a predetermined height so as to limit a first space portion communicating with the first air inlet passage to an upper surface facing the third module; The second module further comprises a second partition wall, The second partition wall protrudes downward by a predetermined height to define the second space portion at a position communicating with the second air intake passage and corresponding to the first space portion. The third module includes: A first insertion slot having a size to accommodate the first space portion by combining with the first module; and The second insertion slot has a size to accommodate the second space portion by combining with the second module, At least one lower discharge groove is arranged on the side wall of the first insertion groove, Each of the lower discharge slots is connected to one of a plurality of first gas supply lines to supply the first process gas to a selected one of the plurality of substrate processing spaces, The side wall of the second insertion groove is provided with at least one upper discharge groove; Each of the upper discharge slots is connected to one of a plurality of second gas supply lines to supply the second process gas to a selected one of the plurality of substrate processing spaces.

9. The air supply module according to claim 8, characterized in that: The depth of the first insertion groove is greater than the height of the first partition wall, and a gas moving channel is arranged between the upper portion of the first partition wall and the bottom surface of the first insertion groove so that the first process gas is evenly diffused in the first insertion groove.

10. The air supply module according to claim 8, characterized in that: The depth of the second insertion groove is greater than the height of the second partition wall, so as to form a gas movement channel between the lower portion of the second partition wall and the bottom surface of the second insertion groove, thereby allowing the second process gas to be evenly diffused in the second insertion groove.

11. The air supply module according to claim 8, characterized in that: A heater is further provided between the first insertion slot and the second insertion slot of the third module to heat the first process gas and the second process gas.

12. A substrate processing device according to any one of claims 1 to 11, characterized in that: include: A chamber having a plurality of substrate processing spaces; A plurality of substrate supporting parts are respectively arranged in the plurality of substrate processing spaces inside the chamber; a plurality of gas injection portions, arranged to correspond to the plurality of substrate support portions; and A gas supply module, supplying the first and second process gases to the plurality of gas injection parts; The gas supply module supplies the first process gas and a second process gas different from the first process gas to the plurality of gas injection parts alternately.

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