High temperature plasma boundary light signal acquisition device and processing method thereof
By designing a high-temperature plasma boundary light signal acquisition device with a split structure, using the method of combining molybdenum plate layering and shielding cover, the problem of difficulty in collecting light signals in high-temperature environments in the prior art is solved, and high-quality Accurate optical signal acquisition and anti-jitter capability.
Patent Information
- Application Number
- CN202210564524.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Patents(China)
- Current Assignee / Owner
- Filing Date
- 2022-05-23
- Publication Date
- 2025-02-07
- Estimated Expiration
- 2042-05-23
AI Technical Summary
Existing optical signal acquisition devices are difficult to quickly enter and exit isoplasmic boundary in high-temperature plasma boundary environments, resulting in heat introduction and clutter signal influence, affecting the acquisition accuracy.
A high-temperature plasma boundary optical signal acquisition device including probe assembly, optical fiber and wafer is designed. The probe core is stacked with a split structure and a layered layer of molybdenum plate. Combined with a shield cover and a dislocation arrangement of wafer and optical fiber, it realizes high temperature and misalignment. shielding of wave signals.
The device can effectively collect light signals in high-temperature environments, reduce heat introduction and clutter signal influence, improve acquisition accuracy, and has the advantages of small size, lightweight, easy installation and anti-jitter ability.
Smart Images

Figure CN115047567B_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of optical signal acquisition devices, and in particular to a high-temperature plasma boundary optical signal acquisition device in a nuclear fusion device and a processing method thereof. Background Art
[0002] At present, the operating parameters of nuclear fusion devices are getting higher and higher, and the difficulty of collecting optical signals at the plasma boundary is also increasing. According to the operating parameters of the EAST device, the temperature rise of the acquisition device chip reaches more than a thousand degrees Celsius per second, and there are also a large number of clutter signals that affect signal acquisition. Therefore, it is necessary to quickly enter and exit the isovoid boundary during the acquisition process to reduce the introduction of heat and be able to shield the input of clutter signals to ensure the normal operation of the acquisition device. However, the optical signal acquisition device in the prior art is difficult to meet the above requirements. Summary of the invention
[0003] The purpose of the present invention is to overcome the deficiencies of the prior art and, on the one hand, to provide a device that can meet the requirements for collecting high-temperature plasma boundary light signals in a nuclear fusion device.
[0004] A high-temperature plasma boundary light signal acquisition device comprises a probe assembly and an optical fiber and a chip fixed in the probe assembly; the probe assembly comprises a probe shell and a probe core arranged in the probe shell, a shielding cover adapted to the shape of the probe shell is arranged outside the probe shell, the probe core comprises layered molybdenum plates, the probe shell comprises an upper molybdenum shell of the probe and a lower molybdenum shell of the probe arranged oppositely, optical fiber grooves are arranged along the length direction on the surface of the molybdenum plate and the middle of the inner side of the upper molybdenum shell of the probe and the lower molybdenum shell of the probe, and a chip placement groove connected to the optical fiber groove is arranged at the end of the optical fiber groove, the probe shell and the probe core are locked and fixed by internal screws, and the probe assembly and the shielding cover are locked and fixed by external screws.
[0005] On the other hand, a processing method for manufacturing the warm plasma boundary light signal acquisition device is provided.
[0006] A method for processing a high temperature plasma boundary light signal acquisition device, used for processing the above-mentioned high temperature plasma boundary light signal acquisition device, comprises the following steps:
[0007] (1) Process the assembly datum of the molybdenum plate, the upper molybdenum shell of the probe and the lower molybdenum shell of the probe, and then process the optical fiber groove and the chip placement groove;
[0008] (2) Insert the internal screws into the bottom molybdenum plate from bottom to top;
[0009] (3) Place the optical fiber and the wafer into the optical fiber groove and the wafer placement groove of the bottom molybdenum plate in step (2);
[0010] (4) Placing the layers of molybdenum plates, as well as the optical fibers and wafers on the molybdenum plates from bottom to top in the manner of steps (2) to (3) to form a probe core;
[0011] (5) Assemble the upper molybdenum shell and the lower molybdenum shell of the probe to the upper and lower sides of the probe core, and lock and fix the entire probe assembly with internal screws;
[0012] (6) The probe assembly and the shielding cover are locked and fixed by external screws.
[0013] The present invention has a compact structure, and compared with the existing optical signal acquisition device, it is small in size and light in weight, and thus has the advantages of being easy to install and able to withstand a large inertial force; and by using molybdenum, the entire device can withstand high temperature tests; at the same time, by adopting a shielding cover and a chip, the staggered arrangement of the optical fiber junction on each layer of molybdenum can shield most of the clutter signals from entering the optical path by mistake, thereby improving the acquisition accuracy.
[0014] The use of the processing method of the present invention not only reduces the difficulty of processing and assembly, but also greatly reduces the assembly gap and assembly error, and improves the positioning accuracy of the optical fiber and the chip.
[0015] Other features and advantages of the present invention will be described in detail in the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS
[0016] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.
[0017] Figure 1 It is a structural schematic diagram of this embodiment;
[0018] Figure 2 Schematic diagram of the installation structure of the probe assembly in this embodiment;
[0019] Figure 3 Schematic diagram of the installation structure of the probe core in this embodiment. DETAILED DESCRIPTION
[0020] The preferred embodiments of the present invention are described in detail below in conjunction with the accompanying drawings so that the advantages and features of the present invention can be more easily understood by those skilled in the art, thereby making a clearer and more definite definition of the protection scope of the present invention.
[0021] See also Figure 1The present embodiment provides a high temperature plasma boundary optical signal acquisition device, comprising a probe assembly 1 and an optical fiber 2 and a chip 3 fixed in the probe assembly 1. In order to solve the technical problems described in the background technology, the technical solution of the present embodiment is: Figure 2 and Figure 3 The probe assembly 1 includes a probe core 11 and a probe shell 12. The probe core 11 is arranged in the probe shell 12. A shielding cover 4 matching its shape is arranged outside the probe shell 12. The probe core 11 includes stacked molybdenum plates 111. The probe shell 12 includes an upper molybdenum shell 121 and a lower molybdenum shell 122 of the probe that are arranged relatively. A fiber groove 13 for placing the optical fiber 2 is arranged on the surface of the molybdenum plate 111 and the middle part of the inner side of the upper molybdenum shell 121 and the lower molybdenum shell 122 of the probe along the length direction. A wafer placement groove 14 connected to the optical fiber groove 13 is arranged at the end thereof. A part of the wafer 3 is placed in the wafer placement groove 14, and the other part extends from the rear end surface of the shielding cover 4 ( Figure 1 As shown in the figure, the molybdenum plate 111, the upper molybdenum shell 121 of the probe and the lower molybdenum shell 122 of the probe are provided with probe locking holes 5 along both sides of the optical fiber groove 13, and the internal screws 6 pass through each probe locking hole 5 to achieve locking and fixation between each molybdenum plate 111, the upper molybdenum shell 121 of the probe and the lower molybdenum shell 122 of the probe. The molybdenum plate 111, the upper molybdenum shell 121 of the probe, the lower molybdenum shell 122 of the probe and the shielding cover 4 are also provided with shielding cover locking holes 7, and the external screws 8 pass through the shielding cover locking holes 7 to achieve locking and fixation between the shielding cover 4 and the probe assembly 1.
[0022] Since the present embodiment adopts a split structure, the chip 3 and the optical fiber 2 can be docked and fixed with high precision in a small space. At the same time, since molybdenum has a very high thermal conductivity, the chip 3 and the molybdenum plate 111, the molybdenum shell 121 on the probe and the molybdenum shell 122 under the probe are also in planar contact, so the molybdenum can quickly take away the heat on the chip, so that the optical fiber 2 and the chip 3 can operate in a higher temperature range without burning. In addition, due to the addition of the shielding cover 4 and the staggered arrangement of the junction of the chip 3 and the optical fiber 2 on each layer of molybdenum, most of the clutter signals that mistakenly enter the optical path can be shielded, thereby improving the detection and acquisition accuracy.
[0023] A method for processing a high temperature plasma boundary light signal acquisition device, used for processing the above-mentioned high temperature plasma boundary light signal acquisition device, comprises the following steps:
[0024] (1) Firstly, the assembly datum of the molybdenum plate 111, the upper molybdenum shell 121 of the probe and the lower molybdenum shell 122 of the probe are processed, and then the optical fiber groove 13 and the wafer placement groove 14 are processed to ensure the assembly accuracy in the later stage;
[0025] (2) When processing each molybdenum plate 111, the upper molybdenum shell 121 of the probe, and the lower molybdenum shell 122 of the probe, an assembly gap is reserved so that the optical fiber 2 and the chip 3 can be tightly fixed in the optical fiber groove 13 and the chip placement groove 14 after positioning;
[0026] (3) Insert the internal screws 6 from bottom to top into the bottom molybdenum plate 111 and place it horizontally;
[0027] (4) Place the optical fiber 2 and the wafer 3 into the optical fiber groove 13 and the wafer placement groove 14 of the bottom molybdenum plate 111;
[0028] (5) Placing the molybdenum plates 111 and the optical fibers 2 and wafers 3 on the molybdenum plates 111 from bottom to top in accordance with steps (3) to (4) to form a probe core 11;
[0029] (6) Insert the internal screw 6 into the lower molybdenum shell 122 of the probe, and place the optical fiber 2 and the chip 3 in the optical fiber groove 13 and the chip placement groove 14 of the lower molybdenum shell 122 of the probe;
[0030] (7) After placing the optical fiber 2 and the wafer 3 in the optical fiber groove 13 and the wafer placement groove 14 on the top surface of the top molybdenum plate 111, press them into the probe upper molybdenum shell 121, and fasten the probe core 11 and the probe shell 12 with the internal screws 6 to form a probe assembly 1;
[0031] (8) A shielding cover 4 is provided on the outer cover of the probe assembly 1 so that a portion of the wafer 3 extends out from the rear end surface of the shielding cover 4.
[0032] By adopting the above-mentioned technology, all processing and assembly processes can be visually observed, which reduces the difficulty of processing and assembly. The one-piece processing and split assembly process greatly reduces the assembly gap and assembly error, and improves the positioning accuracy of the optical fiber 2 and the chip 1. Each chip 3 and optical fiber 2 are fastened and fixed by multiple screws, which enhances the anti-shake ability of the device.
[0033] The above is only a preferred embodiment of the present invention, and the protection scope of the present invention is not limited to the above embodiments. All technical solutions under the concept of the present invention belong to the protection scope of the present invention. It should be pointed out that for ordinary technicians in this technical field, some improvements and modifications without departing from the principle of the present invention should also be regarded as the protection scope of the present invention.
Claims
1. A high-temperature plasma boundary light signal acquisition device, comprising a probe assembly and an optical fiber and a chip fixed in the probe assembly, characterized in that: The probe assembly includes a probe shell and a probe core arranged in the probe shell. A shielding cover adapted to the shape of the probe shell is arranged outside the probe shell. The probe core includes stacked molybdenum plates. The probe shell includes an upper molybdenum shell and a lower molybdenum shell of the probe that are relatively arranged. Optical fiber grooves are arranged on the surface of the molybdenum plate and in the middle of the inner side of the upper molybdenum shell and the lower molybdenum shell of the probe along the length direction. A chip placement groove connected to the optical fiber groove is provided at the end of the optical fiber groove. The probe shell and the probe core are locked and fixed by internal screws, and the probe assembly and the shielding cover are locked and fixed by external screws.
2. A high temperature plasma boundary light signal acquisition device according to claim 1, characterized in that: The molybdenum plate, the upper molybdenum shell of the probe and the lower molybdenum shell of the probe are provided with probe locking holes along both sides of the optical fiber groove, and internal screws pass through each probe locking hole to achieve locking and fixation between each molybdenum plate, the upper molybdenum shell of the probe and the lower molybdenum shell of the probe; the molybdenum plate, the upper molybdenum shell of the probe, the lower molybdenum shell of the probe and the shielding cover are also provided with shielding cover locking holes, and external screws pass through the shielding cover locking holes to achieve locking and fixation between the shielding cover and the probe assembly.
3. A high temperature plasma boundary light signal acquisition device according to claim 1, characterized in that: A portion of the wafer is placed in the wafer placement groove, and another portion extends out from the rear end surface of the shielding cover.
4. A method for processing a high temperature plasma boundary light signal acquisition device, manufacturing a high temperature plasma boundary light signal acquisition device as claimed in any one of claims 1 to 3, characterized in that: The following steps are involved: (1) Process the assembly datum of the molybdenum plate, the upper molybdenum shell of the probe and the lower molybdenum shell of the probe, and then process the optical fiber groove and the chip placement groove; (2) Insert the internal screws into the bottom molybdenum plate from bottom to top; (3) Place the optical fiber and the wafer into the optical fiber groove and the wafer placement groove of the bottom molybdenum plate in step (2); (4) Placing the layers of molybdenum plates, as well as the optical fibers and wafers on the molybdenum plates from bottom to top in the manner of steps (2) to (3) to form a probe core; (5) Assemble the upper molybdenum shell and the lower molybdenum shell of the probe to the upper and lower sides of the probe core, and lock and fix the entire probe assembly with internal screws; (6) The probe assembly and the shielding cover are locked and fixed by external screws.
Citation Information
Patent Citations
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CN110174630A
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CN114381714A