Epitaxial annular infrared halogen heating component and steady-state temperature field acquisition method

Abstract

The present invention discloses an epitaxial annular infrared halogen heating assembly, comprising a reflector and N annular heating lamps, wherein N≥1 and N is an integer, and the N annular heating lamps are fixedly mounted on the reflector. The present invention has high flexibility and can be quickly assembled and installed, thereby improving the overall installation and disassembly efficiency of the device, and can more efficiently adapt to the epitaxial heating scene and can also efficiently utilize energy.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor epitaxial equipment wafer heating devices, and in particular relates to an epitaxial annular infrared halogen heating component and a method for acquiring a steady-state temperature field. Background Art

[0002] Infrared heating mainly transfers energy in the form of infrared radiation through the conversion of electrical energy and infrared radiation energy. This energy has strong penetration in a transparent environment and does not require a transmission medium. It can directly irradiate the heated object. After the heated object absorbs the infrared energy, it will generate heat itself, thereby achieving a warming effect. Compared with contact heating, its heating process is cleaner and more efficient. At the same time, this infrared heating method can be divided into point bulb heating, linear lamp heating, circular lamp heating, spiral lamp heating, and other special-shaped lamp heating according to the shape of the heating lamp.

[0003] However, in the field of semiconductor epitaxy, the existing infrared heating forms are mainly divided into bulb-type heating and straight tube-type heating. These two types of heating lamps have their own advantages and disadvantages in installation. Among them, bulb heating is the most flexible to install, but there are many of them, and there are problems such as large installation and disassembly workload and cumbersome work; the installation workload of straight tube heating lamps is small and the installation is relatively easy, but it cannot better adapt to the wafer heating scene, and there are problems such as increased energy waste.

[0004] Therefore, how to provide a heating lamp assembly that can adapt to the wafer heating space and better balance the thermal field, and at the same time can not only be combined as needed and assembled flexibly, but also can make full use of energy and improve energy conversion efficiency, is a problem that needs to be solved urgently. Summary of the invention

[0005] The object of the present invention is to provide an epitaxial annular infrared halogen heating component and a method for acquiring a steady-state temperature field, so as to solve the problems raised in the above-mentioned background technology.

[0006] To achieve the above objectives, the present invention provides the following technical solutions: an epitaxial annular infrared halogen heating component, comprising a reflective plate and N annular heating lamps, wherein N≥1 and N is an integer, and the N annular heating lamps are fixedly mounted on the reflective plate.

[0007] Furthermore, the annular heating lamp is fixedly connected to the reflective plate via a lamp clamp mounting plate, the lamp clamp mounting plate is arranged at the lower end of the reflective plate, and a cooling plate is arranged between the reflective plate and the lamp clamp mounting plate.

[0008] Furthermore, ventilation and heat dissipation holes are provided in the middle of the reflecting plate and the cooling plate, and a plurality of square holes are provided in a ring shape on the reflecting plate and the cooling plate.

[0009] Furthermore, the square holes on the reflecting plate and the square holes on the cooling plate have the same shape and size, and there is a one-to-one correspondence between the square holes on the reflecting plate and the square holes on the cooling plate.

[0010] Furthermore, threaded holes are provided on the reflective plate, the lamp clamp mounting plate and the cooling plate, and the reflective plate, the lamp clamp mounting plate and the cooling plate are fixedly connected by bolts passing through the threaded holes.

[0011] Furthermore, each of the annular heating lamps includes M arc-shaped halogen heating lamps, where M≥2 and M is an integer. A ceramic lamp holder is provided at the end of each arc-shaped halogen heating lamp. After the ceramic lamp holder passes through the square hole, it is fixedly connected to the lamp clamp mounting plate by bolts.

[0012] Furthermore, the ends of two adjacent arc-shaped halogen heating lamps are fixedly connected via a lamp clamp.

[0013] Furthermore, the outer dimension of the lamp clamp is the same as the inner dimension of the square hole.

[0014] A method for acquiring a steady-state temperature field of an epitaxial annular infrared halogen heating component, wherein the method for acquiring a steady-state temperature field is specifically as follows:

[0015] Obtaining the heating power of the epitaxial annular infrared halogen heating component, and determining the divergence of the conduction power according to the heating power;

[0016] Through the relationship between the heat generation power and the conduction power divergence, the general form of the three-dimensional Poisson equation of the steady-state temperature field is determined, which is:

[0017] ▽·λ▽T=-ρ0(1+αT)J 2 =-G

[0018] Where: λ is the thermal conductivity of the medium, ▽T is the temperature gradient, ρ0 is the resistivity at a given temperature, α is the temperature coefficient of resistance, T is the time coefficient, J is the current density, and G is the steady-state temperature field of the epitaxial annular infrared halogen heating component.

[0019] Furthermore, the divergence of the conduction power is determined according to the heat generation power, as follows:

[0020] The temperature change rate is converted into the form of temperature gradient, specifically:

[0021] p c = -λ▽T

[0022] Where: p c is the heat conduction power of the epitaxial annular infrared halogen heating component, λ is the thermal conductivity of the medium, and ▽T is the temperature gradient;

[0023] Determine the heating power of the epitaxial annular infrared halogen heating assembly, specifically:

[0024] P r =ρ0(1+αT)J 2

[0025] Where: P r is the heating power of the epitaxial annular infrared halogen heating component, ρ0 is the resistivity at a given temperature, α is the temperature coefficient of resistance, T is the time coefficient, and J is the current density;

[0026] The heat generation power per unit volume at any point in the steady-state temperature field is equal to the divergence of the conduction power, specifically:

[0027] P r =-▽·λ▽T

[0028] Where: P r is the heating power of the epitaxial annular infrared halogen heating component, λ is the thermal conductivity of the medium, and ▽T is the temperature gradient.

[0029] Technical effects and advantages of the present invention:

[0030] (1) The epitaxial annular infrared halogen heating assembly of the present invention is provided with N annular heating lamps and M arc-shaped halogen heating lamps, and the number thereof can be determined according to actual conditions, and the arc-shaped halogen heating lamps can be directly clamped and connected by lamp clamps, and the annular heating lamps can be fixed on the reflective plate by the connection between the lamp clamps and the lamp clamp mounting plate, so that the assembly has high flexibility and can be quickly installed and assembled, thereby improving the overall installation and disassembly efficiency of the device;

[0031] (2) The epitaxial annular infrared halogen heating assembly of the present invention is equipped with N annular heating lamps, and the number of the annular heating lamps is determined by the size of the workpiece to be processed. This can better meet the heating needs of the workpiece and perform more comprehensive heating treatment on the workpiece. Therefore, it can not only more efficiently adapt to the epitaxial heating scene, but also more efficiently utilize energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0032] Figure 1 is a top view of the annular halogen heating lamp assembly of the present invention;

[0033] Figure 2 A bottom view of the annular halogen heating lamp assembly of the present invention;

[0034] Figure 3 It is a schematic structural diagram of a cooling plate of the present invention;

[0035] Figure 4 It is a structural schematic diagram of the reflection plate of the present invention;

[0036] The component names corresponding to the numbers in the figure are:

[0037] In the figure: 1. reflector; 2. ventilation and heat dissipation holes; 3. arc-shaped halogen heating lamp; 4. lamp clamp; 5. lamp clamp mounting plate; 6. ceramic lamp holder; 7. cooling plate; 8. square hole; 9. threaded hole. DETAILED DESCRIPTION

[0038] The specific embodiments of the present invention are further described below in conjunction with the accompanying drawings. It should be noted that the description of these embodiments is used to help understand the present invention, but does not constitute a limitation of the present invention. In addition, the technical features involved in the various embodiments of the present invention described below can be combined with each other as long as they do not conflict with each other.

[0039] In the description of the present invention, it is to be understood that the terms “center”, “longitudinal”, “lateral”, “length”, “width”, “thickness”, “up”, “down”, “front”, “back”, “left”, “right”, “vertical”, “horizontal”, “top”, “bottom”, “inside”, “outside”, “clockwise”, “counterclockwise”, “axial”, “radial”, “circumferential”, etc., indicating orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0040] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of the present invention, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0041] Example 1

[0042] refer to Figure 1 This embodiment provides an epitaxial annular infrared halogen heating component, which includes a reflector 1 and N annular heating lamps. It is worth noting that the number N of the annular heating lamps is not fixed, and is determined according to the size of the heated workpiece, that is, N ≥ 1 and N is an integer. At the same time, the N annular heating lamps are fixedly mounted on the reflector 1. Since the number N of the annular heating lamps is determined by the size of the workpiece to be processed, it can better meet the heating needs of the workpiece to be processed, perform more comprehensive heating treatment on the workpiece, and thus be more efficiently adapted to the epitaxial heating scene.

[0043] refer to Figure 2 As can be seen from the figure, a lamp clamp mounting plate 5 and a cooling plate 7 are mounted on the back of the reflector 1, wherein the cooling plate 7 is fixed between the reflector 1 and the lamp clamp mounting plate 5. Figure 3 and Figure 4 As can be seen from the figure, ventilation and heat dissipation holes 2 are provided in the middle of the reflector 1 and the cooling plate 7, and a plurality of square holes 8 are provided in a ring shape on the reflector 1 and the cooling plate 7. It is worth noting that the square holes 8 distributed in a ring shape on the reflector 1 correspond to the square holes 8 distributed in a ring shape on the cooling plate 7, that is, the square holes 8 on the reflector 1 must correspond to the square holes 8 on the cooling plate 7 in the vertical direction. At the same time, the square holes 8 on the reflector 1 and the square holes 8 on the cooling plate 7 are the same in shape and size.

[0044] Specifically, the ventilation and heat dissipation hole 2 is opened in the middle of the epitaxial annular infrared halogen heating component, which is used to accelerate the heat dissipation of the heating component, i.e., the annular heating lamp, during the heating process of the epitaxial annular infrared halogen heating component, to prevent the annular heating lamp from being damaged by excessive temperature, thereby reducing the service life of the annular heating lamp. The square hole 8 is used to assist in fixing the annular heating lamp on the reflector 1.

[0045] In this embodiment, threaded holes 9 are provided on the reflector 1, the lamp clamp mounting plate 5 and the cooling plate 7. Specifically, during the assembly process of the epitaxial annular infrared halogen heating assembly proposed in this embodiment, the total number N of annular heating lamps is first determined according to the size of the workpiece to be processed, and then the ends of the N annular heating lamps are successively passed through the square holes 8 on the reflector 1 and the square holes 8 on the cooling plate 7, and then the ends of the annular heating lamps are fixed through the lamp clamp mounting plate 5. At the same time, the reflector 1, the lamp clamp mounting plate 5 and the cooling plate 7 are fixedly connected by bolts passing through the threaded holes 9.

[0046] Specifically, the epitaxial annular infrared halogen heating assembly proposed in this embodiment can perform a more comprehensive heating treatment on the workpiece and can provide a relatively stable temperature field. Therefore, the steady-state temperature field obtaining process of the epitaxial annular infrared halogen heating assembly proposed in this embodiment is as follows:

[0047] Step S1: According to Fourier's law, the temperature change rate is converted into the form of temperature gradient, specifically:

[0048] p c = -λ▽T

[0049] Where: p c is the heat conduction power of the epitaxial annular infrared halogen heating component, λ is the thermal conductivity of the medium, and ▽T is the temperature gradient.

[0050] Step S2: Calculate the heating power by the following formula:

[0051] P r =ρ0(1+αT)J 2

[0052] Where: P r is the heating power of the epitaxial annular infrared halogen heating component, ρ0 is the resistivity at a given temperature, α is the resistance temperature coefficient, T is the time coefficient, and J is the current density.

[0053] Step S3: Since the epitaxial annular infrared halogen heating assembly of this embodiment provides a steady-state temperature field, the heating power per unit volume at any point in the thermal field is equal to the divergence of the conduction power, and the calculation formula is:

[0054] P r =-▽·λ▽T

[0055] Where: P r is the heating power of the epitaxial annular infrared halogen heating component, λ is the thermal conductivity of the medium, and ▽T is the temperature gradient.

[0056] Step S4: According to the calculation formulas of step S2 and step S3, the general form of the three-dimensional Poisson equation of the steady-state temperature field can be obtained, which is specifically:

[0057] ▽·λ▽T=-ρ0(1+αT)J 2 =-G

[0058] Where: λ is the thermal conductivity of the medium, ▽T is the temperature gradient, ρ0 is the resistivity at a given temperature, α is the temperature coefficient of resistance, T is the time coefficient, J is the current density, and G is the steady-state temperature field of the epitaxial annular infrared halogen heating component.

[0059] Example 2

[0060] Embodiment 2 is an epitaxial annular infrared halogen heating assembly, and its basic structure is the same as that of embodiment 1, except that Figure 1 ,Depend on Figure 1 It can be seen that each annular heating lamp includes M arc-shaped halogen heating lamps 3, where M is greater than or equal to 2 and is an integer. It is worth noting that the number M of the arc-shaped halogen heating lamps 3 will change with the number N of the annular heating lamps, so it is the same as the number N of the annular heating lamps, is not fixed, and can be changed according to actual needs.

[0061] refer to Figure 2 ,Depend on Figure 2 It can be seen that a ceramic base 6 is provided at the end of each arc-shaped halogen heating lamp 3. Specifically, between two adjacent arc-shaped halogen heating lamps 3, the adjacent ceramic bases 6 are clamped and fixedly connected by the lamp clamp 4, thereby fixing the two adjacent arc-shaped halogen heating lamps 3.

[0062] In this embodiment, the outer dimension of the lamp clamp 4 is the same as the inner dimension of the square hole 8, that is, during the assembly process of the epitaxial annular infrared halogen heating assembly proposed in this embodiment, the total number N of the annular heating lamps is first determined according to the size of the workpiece to be processed, and then the number M of the arc-shaped halogen heating lamps 3 is determined through the total number N of the annular heating lamps, and the ceramic bases 6 at the ends of two adjacent arc-shaped halogen heating lamps 3 are clamped and connected by the lamp clamp 4, and then the lamp clamp 4 with the ceramic base 6 is passed through the square hole 8 on the reflecting plate 1 and the square hole 8 on the cooling plate 7 in turn, and then the lamp clamp 4 is fixed to the lamp clamp mounting plate 5, and finally the reflecting plate 1, the lamp clamp mounting plate 5 and the cooling plate 7 are fixedly connected by bolts passing through the threaded holes 9.

[0063] Specifically, the number N of the annular heating lamps and the number M of the arc-shaped halogen heating lamps 3 are determined according to actual conditions, and the arc-shaped halogen heating lamps 3 can be directly clamped and connected by the lamp clamp 4, and the annular heating lamps can be fixed on the reflective plate 1 by the connection between the lamp clamp 4 and the lamp clamp mounting plate 5, so that they have high flexibility and can be quickly installed and assembled, thereby improving the overall installation and disassembly efficiency of the device.

[0064] Although the embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and are not to be construed as limitations of the present invention. A person skilled in the art may change, modify, replace and vary the above embodiments within the scope of the present invention.

Claims

1. An epitaxial annular infrared halogen heating component, characterized in that: The invention comprises a reflecting plate (1) and N annular heating lamps, wherein N is greater than or equal to 1 and N is an integer, and the N annular heating lamps are fixedly mounted on the reflecting plate (1), and the annular heating lamps are fixedly connected to the reflecting plate (1) via a lamp clamp mounting plate (5), and the lamp clamp mounting plate (5) is arranged at the lower end of the reflecting plate (1), and a cooling plate (7) is arranged between the reflecting plate (1) and the lamp clamp mounting plate (5), and ventilation and heat dissipation holes (2) are provided in the middle of the reflecting plate (1) and the cooling plate (7), and a plurality of square holes (8) are provided in an annular shape on the reflecting plate (1) and the cooling plate (7), and the square holes (8) on the reflecting plate (1) and the cooling plate (7) are of the same shape and size, and the square holes (8) on the reflecting plate (1) and the square holes (8) on the cooling plate (7) are similar in shape and size to the square holes (8) on the cooling plate (7), and the square holes (8) on the reflecting plate (1) and the square holes (8) on the cooling plate (7) are similar in shape and size to the square holes (8) on the cooling plate (7). 8), the reflecting plate (1), the lamp clamp mounting plate (5) and the cooling plate (7) are all provided with threaded holes (9), the reflecting plate (1), the lamp clamp mounting plate (5) and the cooling plate (7) are fixedly connected by bolts passing through the threaded holes (9), each of the annular heating lamps comprises M arc-shaped halogen heating lamps (3), M ≥ 2 and M is an integer, a ceramic lamp holder (6) is provided at the end of each arc-shaped halogen heating lamp (3), after the ceramic lamp holder (6) passes through the square hole (8), it is fixedly connected to the lamp clamp mounting plate (5) by bolts, the ends of two adjacent arc-shaped halogen heating lamps (3) are fixedly connected by a lamp clamp (4), and the outer dimensions of the lamp clamp (4) are the same as the inner dimensions of the square hole (8).

2. A method for acquiring a steady-state temperature field of an epitaxial annular infrared halogen heating component according to claim 1, characterized in that: The method for obtaining the steady-state temperature field is specifically as follows: Obtaining the heating power of the epitaxial annular infrared halogen heating component, and determining the divergence of the conduction power according to the heating power; Through the relationship between the heat generation power and the conduction power divergence, the general form of the three-dimensional Poisson equation of the steady-state temperature field is determined, which is: ▽·λ▽T=-ρ0(1+αT)J 2 =-G Where: λ is the thermal conductivity of the medium, ▽T is the temperature gradient, ρ0 is the resistivity at a given temperature, α is the temperature coefficient of resistance, T is the time coefficient, J is the current density, and G is the steady-state temperature field of the epitaxial annular infrared halogen heating component.

3. The method for acquiring the steady-state temperature field of the epitaxial annular infrared halogen heating component according to claim 2, characterized in that: The divergence of the conduction power is determined according to the heating power, as follows: The temperature change rate is converted into the form of temperature gradient, specifically: p c =-λ▽T Where: p c is the heat conduction power of the epitaxial annular infrared halogen heating component, λ is the thermal conductivity of the medium, and ▽T is the temperature gradient; Determine the heating power of the epitaxial annular infrared halogen heating assembly, specifically: P r =ρ0(1+αT)J 2 Where: P r is the heating power of the epitaxial annular infrared halogen heating component, ρ0 is the resistivity at a given temperature, α is the temperature coefficient of resistance, T is the time coefficient, and J is the current density; The heat generation power per unit volume at any point in the steady-state temperature field is equal to the divergence of the conduction power, specifically: P r =-▽·λ▽T Where: P r is the heating power of the epitaxial annular infrared halogen heating component, λ is the thermal conductivity of the medium, and ▽T is the temperature gradient.

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