Diamond wire cutting fluid, preparation method and application thereof

Abstract

The present application discloses a diamond wire cutting fluid, its preparation method and application. The cutting fluid includes, by mass, 10 to 30 parts of a surfactant, 10 to 20 parts of a wetting agent, 10 to 30 parts of a penetrant, 0.5 to 5 parts of a defoaming agent and 30 to 50 parts of ultrapure water. The cutting fluid of the present application contains both a surfactant containing a carbon fluorine chain and a surfactant containing a hydrocarbon chain, so that the cutting fluid has more excellent wettability, effectively reducing the uneven thickness of silicon wafers and the problem of wire jamming during the cutting process; and the above two surfactants are compounded to improve the corrosion inhibition effect of the cutting fluid, effectively reducing the problem of diamond wire breakage during the cutting process. The cutting fluid of the present application has excellent cutting ability, can play a good anti-corrosion effect, and effectively protects the diamond wire, ensuring cutting quality and efficiency.

Description

Technical Field

[0001] The present application belongs to the field of chip cutting technology, and specifically relates to a diamond wire cutting fluid, a preparation method and application thereof. Background Art

[0002] The increase in silicon wafer diameter, the decrease in thickness and line width, as well as the higher requirements for silicon wafer geometry, small surface mechanical damage, and lattice integrity have put forward higher requirements for silicon wafer cutting quality. The current diamond wire cutting fluid cannot fully meet the requirements of industrial production, and problems such as scratches, wire breakage, and corrosion often occur during the cutting process. Summary of the invention

[0003] Purpose of application: This application provides a diamond wire cutting fluid, its preparation method and application, aiming to solve the problems of diamond wire breakage, surface corrosion and scratches in the silicon wafer cutting process.

[0004] Technical solution: A diamond wire cutting fluid of the present application comprises, by weight: 10 to 30 parts of a surfactant, 10 to 20 parts of a wetting agent, 10 to 30 parts of a penetrant, 0.5 to 5 parts of a defoaming agent and 30 to 50 parts of ultrapure water;

[0005] Wherein, the surfactant comprises a first surfactant and a second surfactant, and the chemical formula of the first surfactant is: F(CF2) q (CH2) m (OCH2CH2) n OH, wherein q is an integer of 6-8; m is an integer of 1-3; n is an integer of 8-13;

[0006] The chemical formula of the second surfactant is: 10 H 21 O(CH2CH2O) x H; wherein x is an integer from 9 to 13.

[0007] In some embodiments, the chemical formula of the first surfactant is: F(CF2)8(CH2)2(OCH2CH2)9OH; the chemical formula of the second surfactant is: C 10 H 21 O(CH2CH2O) 10 H.

[0008] In some embodiments, the mass ratio of the first surfactant to the second surfactant is 1:(9-20).

[0009] In some embodiments, the wetting agent is selected from at least one of the compounds of formula (1) and formula (2);

[0010] Formula (1) is: R1O(CH2CH2O) a H, wherein R1 is selected from C9 to C 11 A hydrocarbon group, a is an integer of 7-9;

[0011] Formula (2) is: R2O(CH2CH3CHO) b H, wherein R2 is selected from C8~C 12 A hydrocarbon group, b is an integer of 8-9.

[0012] In some embodiments, the chemical formula of the penetrant is: 10 H 21 O(CH2CH2O) c H, wherein c is an integer from 4 to 6.

[0013] In some embodiments, the defoaming agent is selected from at least one of mineral oil, fatty acid, fatty acid ester, fatty amide, and polyether;

[0014] Among them, the fatty acid is selected from at least one of caprylic acid, azelaic acid, capric acid, and lauric acid; the fatty acid ester is selected from at least one of lauric acid monoglyceride, acetate monoglyceride, lactic acid monoglyceride, diacetyl tartaric acid monoglyceride, and succinic acid monoglyceride; the fatty amide is selected from at least one of oleamide, erucamide, N-(4-hydroxyphenyl) stearic acid amide, and fatty acid diethanolamide; the polyether is selected from at least one of polyoxyethylene ether, epoxypropyl-terminated polyether, and propylene glycol block polyether.

[0015] In some embodiments, the defoaming agent consists of mineral oil and polyether, wherein the mass ratio of the mineral oil to the polyether is 1:(1-10).

[0016] In some embodiments, the composition comprises, by weight: 15 to 25 parts of a surfactant, 12 to 17 parts of a wetting agent, 15 to 25 parts of a penetrant, 1 to 3 parts of a defoaming agent, and 35 to 45 parts of ultrapure water.

[0017] In some embodiments, the present application also provides a method for preparing the diamond wire cutting fluid, comprising the following steps:

[0018] The surfactant, wetting agent, penetrant and defoamer are weighed in parts by mass respectively and mixed, and then corresponding parts by mass of ultrapure water are added and stirred to obtain a diamond wire cutting fluid.

[0019] In some embodiments, the present application also provides a use of the diamond wire cutting fluid in cutting semiconductor silicon wafers.

[0020] Beneficial effect: Compared with the prior art, the cutting fluid of the present application contains both a surfactant containing a carbon fluorine chain and a surfactant containing a hydrocarbon chain, which makes the cutting fluid have better wettability, effectively reducing the uneven thickness of silicon wafers and the problem of wire jamming during the cutting process; and the above two surfactants are compounded to improve the corrosion inhibition effect of the cutting fluid, effectively reducing the problem of diamond wire breakage during the cutting process. The cutting fluid of the present application has excellent cutting ability, can play a good anti-corrosion effect, and effectively protects the diamond wire, ensuring the cutting quality and efficiency.

[0021] It can be understood that, compared with the prior art, the preparation method of the diamond wire cutting fluid and the application of the diamond wire cutting fluid provided in the embodiments of the present application have all the technical features and beneficial effects of the above-mentioned diamond wire cutting fluid, which will not be repeated here. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0023] Figure 1 The scratches on the silicon wafer surface after cutting with the cutting fluid of Example 1;

[0024] Figure 2 The scratches on the silicon wafer surface after cutting with the cutting fluid of Example 1;

[0025] Figure 3 The edge collapse of the silicon wafer surface after cutting with the cutting fluid of Example 1;

[0026] Figure 4 This is the edge collapse of the silicon wafer surface after cutting with the cutting fluid of Example 1. DETAILED DESCRIPTION

[0027] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0028] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or can communicate with each other; it can be directly connected, or indirectly connected through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to the specific circumstances. In the description of the present application, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. In addition, the terms "first" and "second" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features.

[0029] The disclosure below provides many different embodiments or examples to realize the different structures of the present application. In order to simplify the disclosure of the present application, the parts and settings of specific examples are described below. Of course, they are only examples, and the purpose is not to limit the present application.

[0030] The applicant has found that with the rapid development of large-scale integrated circuit technology and the rapid development of the global electronic chip industry, the use of monocrystalline silicon and polycrystalline silicon has also increased. In addition, with the increased use of renewable energy, the solar photovoltaic industry has developed rapidly as a new energy industry, and the solar industry requires a large amount of silicon materials, especially polycrystalline silicon. The increase in the diameter of silicon wafers, the reduction in thickness and line width, and the higher requirements for the geometric dimensions of silicon wafers, small mechanical damage to their surfaces, and lattice integrity have put forward higher requirements for the quality of silicon wafer cutting. The cutting quality of silicon wafers will affect the processing efficiency of subsequent grinding, polishing, etching and other processes and even affect the final quality of semiconductor devices. However, the diamond wire cutting fluid used in some production cannot fully meet the requirements of industrial production. Scratches, broken wires, corrosion and other problems often occur during the cutting process. Therefore, it is necessary to develop a diamond wire cutting fluid with strong wettability and anti-corrosion effect.

[0031] Based on the above problems, the embodiment of the present application provides a diamond wire cutting fluid, which includes, by mass, 10 to 30 parts of a surfactant, 10 to 20 parts of a wetting agent, 10 to 30 parts of a penetrant, 0.5 to 5 parts of a defoaming agent, and 30 to 50 parts of ultrapure water; wherein the surfactant includes a first surfactant and a second surfactant, and the chemical formula of the first surfactant is: F(CF2) q (CH2) m (OCH2CH2) nOH, wherein q is an integer of 6-8; m is an integer of 1-3; n is an integer of 8-13; the chemical formula of the second surfactant is: C 10 H 21 O(CH2CH2O) x H; wherein x is an integer from 9 to 13.

[0032] It can be understood that the above-mentioned first surfactant contains a carbon fluorine chain, and the above-mentioned second surfactant contains a hydrocarbon chain, so the first surfactant and the second surfactant can play a synergistic role to improve the application performance of the cutting fluid. This is because the van der Waals force between the carbon fluorine chain and the hydrocarbon chain is weaker than the interaction force between the two carbon fluorine chains or the two hydrocarbon chains, which causes the carbon fluorine chain and the hydrocarbon chain to produce a mutual repellency effect, forming hydrogenated micelles and fluorinated micelles, giving the cutting fluid system better wetting properties, effectively reducing the uneven thickness of the silicon wafer and the wire jamming problem during the cutting process; in addition, when the first surfactant and the second surfactant are used together, because they have hydrophilic groups and hydrophobic groups, they can also be used as organic corrosion inhibitors to enhance the corrosion inhibition effect of the cutting fluid and effectively reduce the problem of diamond wire breakage during the cutting process. In summary, by compounding the first surfactant containing a carbon fluorine chain with the second surfactant containing a hydrocarbon chain, not only the wettability of the cutting fluid is improved, but also the diamond wire is protected, ensuring the cutting quality and efficiency.

[0033] In some embodiments, the first surfactant is a fluorocarbon surfactant, such as anionic, cationic, zwitterionic and nonionic fluorocarbon surfactants, preferably nonionic fluorocarbon surfactants, such as fluorinated alkyl ethoxy ether alcohols. It is understood that nonionic fluorocarbon surfactants are not ionized in aqueous solution, and their polar groups are usually composed of a certain number of oxygen-containing ether bonds and / or hydroxyl groups. The length of the polar group can be adjusted. Changes in the length of the polar group can change the hydrophile-lipophile balance value of the non-ionic fluorocarbon surfactant. The hydrophile-lipophile balance value of the non-ionic fluorocarbon surfactant has a great influence on the interfacial properties of the system in which it is located and the stability of the emulsion. Therefore, the length of the polyoxyethylene segment (-OCH2CH2-) directly affects the surface activity behavior of the first surfactant. When n is an integer in the range of 8-13, the first surfactant can have better stability, making it less susceptible to the presence of electrolytes and certain inorganic salts, and has higher wettability, thereby improving the uniformity of silicon wafer thickness. It must also be pointed out that the first surfactant is connected to the polar group with a hydrocarbon chain and a carbon-fluorine chain of a certain length. When q is an integer of 6-8 and m is an integer of 1-3, the above-mentioned composite structure enables the first surfactant to have good foaming properties, and the foam formed is delicate and stable, which is convenient for the defoaming agent to treat and eliminate the foam formed.

[0034] In some embodiments, the first surfactant preferably has a chemical formula of: F(CF2)8(CH2)2(OCH2CH2)9OH.

[0035] In some embodiments, the second surfactant also contains a polyoxyethylene segment, and the length of the polyoxyethylene segment is similar to that of the first surfactant. On the one hand, the compatibility between the first surfactant and the second surfactant can be improved. At the same time, the length of the polyoxyethylene segment also directly affects the performance of the second surfactant. When x is an integer of 9-13, it can ensure that the second surfactant has a certain hydrophobicity without reducing its degreasing ability, and can also avoid the generation of excessive foam and affecting cutting.

[0036] In some embodiments, the second surfactant preferably has the chemical formula: 10 H 21 O(CH2CH2O) 10 H.

[0037] In some embodiments, the mass ratio of the first surfactant to the second surfactant is 1:(9-20). It is understandable that when the first surfactant and the second surfactant meet the above mass ratio, the wettability of the cutting fluid is better, the torque generated during cutting is smaller, the wire breakage rate is lower, and the cutting effect is better. Among them, the mass ratio of the first surfactant and the second surfactant can be any one of 1:9, 1:10, 1:11, 1:12, 1:13, 1:14, 1:15, 1:16, 1:17, 1:18, 1:19, 1:20 or the range between any two values. Further, the mass ratio of the first surfactant and the second surfactant is preferably 1:(10-15); further, the mass ratio of the first surfactant and the second surfactant is more preferably 1:15.

[0038] In some embodiments, the wetting agent is selected from at least one of the compounds of formula (1) and formula (2);

[0039] Formula (1) is: R1O(CH2CH2O) a H, wherein R1 is selected from C9 to C 11 A hydrocarbon group, a is an integer of 7-9;

[0040] Formula (2) is: R2O(CH2CH3CHO) b H, wherein R2 is selected from C8~C 12 A hydrocarbon group, b is an integer of 8-9.

[0041] Furthermore, the wetting agent is a narrow distribution fatty alcohol polyoxyethylene ether and / or a branched fatty alcohol polyoxypropylene ether. The wetting agent contains ethylene oxide groups or propylene oxide groups, which can effectively reduce the static surface tension and dynamic surface tension of the cutting fluid, while improving the emulsification and wetting ability. The emulsification effectively improves the stability of the cutting fluid. When a is an integer of 7-9 or b is an integer of 8-9, the wetting agent can make the cutting fluid wet the surface of the silicon wafer faster, forming a dense protective film to prevent scratches on the silicon wafer, ensure the cutting force, and thus improve the cutting yield.

[0042] Furthermore, in formula (1), a can be 7, 8, or 9, preferably 8; and in formula (2), b is 8 or 9, preferably 8.

[0043] In some embodiments, the chemical formula of the penetrant is: 10 H 21 O(CH2CH2O) c H, wherein c is an integer of 4 to 6. The penetrant is a narrow distribution fatty alcohol polyoxyethylene ether. When c is an integer of 4 to 6, the penetrant can penetrate the residual silicon powder on the silicon wafer to disperse it evenly, and prevent the silicon powder generated after cutting from accumulating on the silicon wafer and agglomerating into blocks.

[0044] Furthermore, in the chemical formula of the penetrant, c can be 4, 5, or 6, preferably 4 or 5.

[0045] In some embodiments, the defoamer is selected from at least one of mineral oil, fatty acid, fatty acid ester, fatty amide, and polyether. The defoamer can reduce the surface tension of water, solution, suspension, etc., prevent the formation of foam, or reduce the original foam. Through the interaction between the defoamer and the surfactant, the effect of inhibiting the generation of foam and improving the cutting performance can be achieved.

[0046] In some embodiments, the fatty acid is selected from at least one of caprylic acid, azelaic acid, capric acid, and lauric acid.

[0047] In some embodiments, the fatty acid ester is selected from at least one of lauric acid monoglyceride, acetate monoglyceride, lactic acid monoglyceride, diacetyl tartaric acid monoglyceride, and succinic acid monoglyceride.

[0048] In some embodiments, the fatty amide is selected from at least one of oleamide, erucamide, N-(4-hydroxyphenyl)stearic acid amide, and fatty acid diethanolamide.

[0049] In some embodiments, the polyether is selected from at least one of polyoxyethylene ether, polyether polyol, and propylene glycol block polyether.

[0050] In some embodiments, the defoamer is composed of mineral oil and polyether, wherein the mass ratio of mineral oil to polyether is 1:(1-10). When the defoamer is composed of mineral oil and polyether, since the polyether segment has a hydrophilic function and the mineral oil segment has a hydrophobic function, the combination of the two can achieve a better foam suppression effect and a better defoaming effect. Among them, the mass ratio of mineral oil to polyether is preferably 1:(1-4), and the mass ratio of mineral oil to polyether is further preferably 1:3.

[0051] In some embodiments, ultrapure water contains almost no impurities, that is, water from which almost all atoms except oxygen and hydrogen have been removed. Ultrapure water has a resistance greater than or equal to 18MΩ. The reason for using ultrapure water is to prevent other elements in non-ultrapure water from reacting with components in the cutting fluid due to local temperature rise during the cutting process, resulting in corrosion of the steel wire and silicon wafer, and to avoid the impact of the reaction on pH and conductivity.

[0052] In some embodiments, the composition of the diamond wire cutting fluid further includes, by mass: 15 to 25 parts of a surfactant, 12 to 17 parts of a wetting agent, 15 to 25 parts of a penetrant, 1 to 3 parts of a defoaming agent, and 35 to 45 parts of ultrapure water.

[0053] In some embodiments, a method for preparing a diamond wire cutting fluid is provided, comprising the following steps:

[0054] The surfactant, wetting agent, penetrant and defoamer are weighed and mixed respectively by weight, and then corresponding weight portions of ultrapure water are added and stirred until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining a diamond wire cutting fluid.

[0055] In some embodiments, the provided diamond wire cutting fluid can be used to cut semiconductor silicon wafers and can be used directly in the silicon wafer cutting process without special requirements. The diamond wire cutting fluid is safe, environmentally friendly, and can achieve fast and efficient silicon wafer cutting. The cutting fluid has extremely high wettability and defoaming properties, and has good corrosion inhibition, and can be used in the field of photovoltaic silicon wafer cutting. The diamond wire cutting fluid has very good application prospects and large-scale industrial promotion potential in the field of silicon wafer cutting.

[0056] It can be understood that the cutting fluid provided in this embodiment can be well used in the process of diamond wire cutting silicon wafers, but considering the differences in specific components, the cutting fluid of this embodiment is not completely suitable for other cutting processes, such as laser cutting. This is because the cutting principles of different cutting processes are different. The cutting fluid of this embodiment can solve the problems of diamond wire breakage, corrosion and scratches in the silicon wafer cutting process with the cooperation of different surfactants, and these problems will not occur in other processes.

[0057] Example 1

[0058] Provided is a diamond wire cutting fluid, comprising:

[0059] 16 parts surfactant, 15 parts wetting agent, 20 parts penetrant, 2 parts defoamer, 40 parts ultrapure water.

[0060] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:15; the defoaming agent is mineral oil and glycidyl end-capped polyether, and the mass ratio of mineral oil to glycidyl end-capped polyether is 1:3; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 1 below.

[0061] Table 1

[0062] The first surfactant <![CDATA[F(CF2)8(CH2)2(OCH2CH2)9OH]]> Second surfactant <![CDATA[C 10 H 21 O(CH2CH2O) 10 H]]> Wetting Agents <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)8H]]><h2 style=";text-align:left;direction:ltr"> Penetrant <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)5H]]><h2 style=";text-align:left;direction:ltr">

[0063] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0064] Example 2

[0065] Provided is a diamond wire cutting fluid, comprising:

[0066] 22 parts surfactant, 10 parts wetting agent, 30 parts penetrant, 5 parts defoamer, 30 parts ultrapure water.

[0067] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:10; the defoaming agent is mineral oil and glycidyl end-capped polyether, and the mass ratio of mineral oil to glycidyl end-capped polyether is 1:1; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 2 below.

[0068] Table 2

[0069] The first surfactant <![CDATA[F(CF2)8(CH2)2(OCH2CH2)9OH <!-- 5 -->]]> Second surfactant <![CDATA[C 10 H 21 O(CH2CH2O) 10 H]]> Wetting Agents <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)8H]]><h2 style=";text-align:left;direction:ltr"> Penetrant <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)5H]]><h2 style=";text-align:left;direction:ltr">

[0070] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0071] Example 3

[0072] Provided is a diamond wire cutting fluid, comprising:

[0073] 21 parts surfactant, 20 parts wetting agent, 15 parts penetrant, 1 part defoamer, 35 parts ultrapure water.

[0074] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:20; the defoaming agent is mineral oil and glycidyl end-capped polyether, and the mass ratio of mineral oil to glycidyl end-capped polyether is 1:10; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 3 below.

[0075] Table 3

[0076] The first surfactant <![CDATA[F(CF2)8(CH2)2(OCH2CH2)9OH]]> Second surfactant <![CDATA[C 10 H 21 O(CH2CH2O) 10 H]]> Wetting Agents <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)8H]]><h2 style=";text-align:left;direction:ltr"> Penetrant <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)5H]]><h2 style=";text-align:left;direction:ltr">

[0077] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0078] Example 4

[0079] Provided is a diamond wire cutting fluid, comprising:

[0080] 16 parts surfactant, 12 parts wetting agent, 10 parts penetrant, 3 parts defoamer, 45 parts ultrapure water.

[0081] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:15; the defoaming agent is lauric acid; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 4 below.

[0082] Table 4

[0083] The first surfactant <![CDATA[F(CF2)6(CH2)(OCH2CH2)8OH]]> Second surfactant <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)9H]]><h2 style=";text-align:left;direction:ltr"> Wetting Agents <![CDATA[C9H 19 O(CH2CH2O)7H]]> Penetrant <![CDATA[C 10 H 21 O(CH2CH2O)4H]]>

[0084] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0085] Example 5

[0086] Provided is a diamond wire cutting fluid, comprising:

[0087] 15 parts surfactant, 17 parts wetting agent, 25 parts penetrant, 0.5 parts defoamer, 50 parts ultrapure water.

[0088] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:14; the defoaming agent is lauric acid monoglyceride; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 5 below.

[0089] Table 5

[0090] The first surfactant <![CDATA[F(CF2)7(CH2)3(OCH2CH2) 13 OH]]> Second surfactant <![CDATA[C 10 H 21 O(CH2CH2O) 13 H]]> Wetting Agents <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 11 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 23 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)9H]]><h2 style=";text-align:left;direction:ltr"> Penetrant <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)6H]]><h2 style=";text-align:left;direction:ltr">

[0091] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0092] Example 6

[0093] Provided is a diamond wire cutting fluid, comprising:

[0094] 30 parts surfactant, 15 parts wetting agent, 20 parts penetrant, 4 parts defoamer, 40 parts ultrapure water.

[0095] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:9; the defoaming agent is oleic acid amide; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 6 below.

[0096] Table 6

[0097] The first surfactant <![CDATA[F(CF2)8(CH2)3(OCH2CH2) 10 OH]]> Second surfactant <![CDATA[C 10 H 21 O(CH2CH2O) 10 H]]> Wetting Agents <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)9H]]><h2 style=";text-align:left;direction:ltr"> Penetrant <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)5H]]><h2 style=";text-align:left;direction:ltr">

[0098] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0099] Example 7

[0100] Provided is a diamond wire cutting fluid, comprising:

[0101] 10 parts surfactant, 18 parts wetting agent, 25 parts penetrant, 2 parts defoamer, 35 parts ultrapure water.

[0102] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:9; the defoaming agent is mineral oil and polyoxyethylene ether, and the mass ratio of mineral oil to polyoxyethylene ether is 1:3; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 7 below.

[0103] Table 7

[0104] The first surfactant <![CDATA[F(CF2)8(CH2)2(OCH2CH2)9OH]]> Second surfactant <![CDATA[C 10 H 21 O(CH2CH2O) 10 H]]> Wetting Agents <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH3CHO)8H]]><h2 style=";text-align:left;direction:ltr"> Penetrant <h2 style=";text-align:left;direction:ltr"><![CDATA[C <h2 style=";text-align:left;direction:ltr"> 10 <h2 style=";text-align:left;direction:ltr"> H<h2 style=";text-align:left;direction:ltr"> 21 <h2 style=";text-align:left;direction:ltr"> O(CH2CH2O)5H]]><h2 style=";text-align:left;direction:ltr">

[0105] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0106] Example 8

[0107] Provided is a diamond wire cutting fluid, comprising:

[0108] 20 parts surfactant, 14 parts wetting agent, 15 parts penetrant, 3 parts defoamer, 50 parts ultrapure water.

[0109] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:19; the defoaming agent is mineral oil and propylene glycol block polyether, and the mass ratio of mineral oil to propylene glycol block polyether is 1:3; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 8 below.

[0110] Table 8

[0111]

[0112]

[0113] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0114] Example 9

[0115] Provided is a diamond wire cutting fluid, comprising:

[0116] 11 parts surfactant, 16 parts wetting agent, 25 parts penetrant, 1 part defoamer, 45 parts ultrapure water.

[0117] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:10; the defoaming agent is mineral oil and polyoxyethylene ether, and the mass ratio of mineral oil to polyoxyethylene ether is 1:3; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 9 below.

[0118] Table 9

[0119]

[0120] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0121] Example 10

[0122] Provided is a diamond wire cutting fluid, comprising:

[0123] 25 parts surfactant, 11 parts wetting agent, 15 parts penetrant, 2.5 parts defoamer, 35 parts ultrapure water.

[0124] Among them, the surfactant includes a first surfactant and a second surfactant, and the mass ratio of the first surfactant to the second surfactant is 1:12; the defoaming agent is mineral oil and propylene glycol block polyether, and the mass ratio of mineral oil to propylene glycol block polyether is 1:9; the chemical formulas of the first surfactant, the second surfactant, the wetting agent and the penetrant are shown in Table 10 below.

[0125] Table 10

[0126]

[0127] Preparation process: First weigh each component in its respective amount; add all components except ultrapure water into a container, inject ultrapure water while stirring continuously, and stir until all materials are completely dissolved and present a uniform and transparent state, thereby obtaining the diamond wire cutting fluid.

[0128] Comparative Example 1

[0129] A cutting fluid is provided, the specific composition of which is similar to that of Example 1, except that the first surfactant F(CF2)8(CH2)2(OCH2CH2)9OH of Example 1 is not added to Comparative Example 1.

[0130] Comparative Example 2

[0131] Provided is a cutting fluid, the specific composition of which is similar to that of Example 1, except that the second surfactant C of Example 1 is not added in Comparative Example 2. 10 H 21 O(CH2CH2O) 10 H.

[0132] Comparative Example 3

[0133] A cutting fluid is provided, the specific composition of which is similar to that of Example 1, except that the wetting agent of Example 1 is not added in Comparative Example 3.

[0134] Comparative Example 4

[0135] A cutting fluid is provided, the specific composition of which is similar to that of Example 1, except that the penetrant of Example 1 is not added in Comparative Example 4.

[0136] Comparative Example 5

[0137] A cutting fluid is provided, the specific composition of which is similar to that of Example 1, except that the defoaming agent of Example 1 is not added in Comparative Example 5.

[0138] Comparative Example 6

[0139] A cutting fluid is provided, the specific composition of which is similar to that of Example 1, except that the surfactant in Comparative Example 6 is a perfluorinated surfactant C6F5 (OCH2CH2) 10 OH.

[0140] The cutting fluids of Examples 1-10 and Comparative Examples 1-6 were used for silicon wafer cutting, and the diamond wire breakage rate, the scratches and edge collapse of the cut silicon wafers, and the torque during the cutting process were compared, and the specific results are shown in Table 11. The torque test process is: the maximum peak value measured when the fastener is fixed, the torque wrench and the power tool can both apply dynamic torque, the dynamic torque cannot be measured after the fastener is tightened, and the torque value is obtained by online measurement when the dynamic torque is loaded.

[0141] Table 11

[0142]

[0143]

[0144] As can be seen from Table 11, the average wire breakage rate of the cutting fluid of Example 1-10 is 12.10%, and the wire breakage rate of Comparative Example 1 is 23.56%. The wire breakage rate of Comparative Example 1 is greater than the average wire breakage rate of Example 1-10, which shows that after adding the first surfactant containing a carbon fluorine chain, the wire breakage rate of the diamond wire is reduced. The first surfactant containing a carbon fluorine chain can play a good anti-corrosion role, and make the cutting fluid of Example 1-10 have higher wettability, which can effectively protect the diamond wire. In addition, the average edge collapse rate of Example 1-10 is 1.06%, and the average edge collapse rate of Comparative Example 1-6 is 2.15%. The average edge collapse rate of Example 1-10 is less than that of Comparative Example 1-6, which shows that after using the cutting fluid of this embodiment, through the compounding of the first surfactant and the second surfactant, and combined with the wetting agent, penetrant and defoamer, the edge collapse and scratch phenomenon on the cut silicon wafer can be significantly reduced.

[0145] The torque of Example 1-10 is significantly smaller than that of Comparative Example 1-6, indicating that after the first surfactant and the second surfactant are compounded, the corrosion inhibition effect is enhanced, the problem of diamond wire breakage during the cutting process is effectively reduced, and the cutting quality and efficiency are guaranteed.

[0146] See also Figure 1-2 , Figure 1 After using the cutting fluid of Example 1, there are fewer scratches on the surface of the silicon wafer. Figure 2 After using the cutting fluid of Comparative Example 1, multiple scratches appeared on the surface of the silicon wafer; and further see Figure 3-4 , Figure 3 After using the cutting fluid of Example 1, there is no edge collapse on the silicon wafer surface. Figure 4 After using the cutting fluid of Comparative Example 1, edge collapse occurred on the surface of the silicon wafer, indicating that the addition of the first surfactant containing a carbon fluorine chain can further improve wettability, improve scratches on the surface of the silicon wafer, and reduce the occurrence of edge collapse.

[0147] Further comparing the data of Example 1 and Comparative Example 6, the performance of Example 1 is significantly better than that of Comparative Example 6. This is because Comparative Example 6 uses a perfluorinated surfactant, which has poor compatibility with other carbon-hydrogen bonds, and is difficult to degrade and may cause environmental pollution.

[0148] The diamond wire cutting fluid provided by the present application has no special requirements for the diamond wire cutting silicon wafer process, and no special processing flow. The cutting fluid is environmentally friendly, pollution-free, and has low volatile loss. After the cutting process is completed, the silicon wafer only needs to be rinsed with pure water, which is harmless to the environment and human body. The diamond wire cutting fluid provided by the present application has very good application prospects and large-scale industrial promotion potential in the field of silicon wafer cutting.

[0149] The above is a detailed introduction to a diamond wire cutting fluid, a preparation method and an application thereof provided in the embodiments of the present application. Specific examples are used in the present application to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solution and core idea of ​​the present application. Ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein with equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A diamond wire cutting fluid, characterized in that: The composition comprises, by weight: 10 to 30 parts of a surfactant, 10 to 20 parts of a wetting agent, 10 to 30 parts of a penetrant, 0.5 to 5 parts of a defoaming agent and 30 to 50 parts of ultrapure water; Wherein, the surfactant comprises a first surfactant and a second surfactant, and the chemical formula of the first surfactant is: F(CF2) q (CH2) m (OCH2CH2) n OH, wherein q is an integer of 6-8; m is an integer of 1-3; n is an integer of 8-13; The chemical formula of the second surfactant is: 10 H 21 O(CH2CH2O) x H; wherein x is an integer from 9 to 13.

2. The diamond wire cutting fluid according to claim 1, characterized in that: The chemical formula of the first surfactant is: F(CF2)8(CH2)2(OCH2CH2)9OH; the chemical formula of the second surfactant is: C 10 H 21 O(CH2CH2O) 10 H.

3. The diamond wire cutting fluid according to claim 1, characterized in that: The mass ratio of the first surfactant to the second surfactant is 1:(9-20).

4. The diamond wire cutting fluid according to claim 1, characterized in that: The wetting agent is selected from at least one of the compounds of the following formula (1) and formula (2); Formula (1) is: R1O(CH2CH2O) a H, wherein R1 is selected from C9 to C 11 A hydrocarbon group, a is an integer of 7-9; Formula (2) is: R2O(CH2CH3CHO) b H, wherein R2 is selected from C8~C 12 A hydrocarbon group, b is an integer of 8-9.

5. The diamond wire cutting fluid according to claim 1, characterized in that: The chemical formula of the penetrant is: 10 H 21 O(CH2CH2O) c H, wherein c is an integer from 4 to 6.

6. The diamond wire cutting fluid according to claim 1, characterized in that: The defoamer is selected from at least one of mineral oil, fatty acid, fatty acid ester, fatty amide, and polyether; Among them, the fatty acid is selected from at least one of caprylic acid, azelaic acid, capric acid, and lauric acid; the fatty acid ester is selected from at least one of lauric acid monoglyceride, acetate monoglyceride, lactic acid monoglyceride, diacetyl tartaric acid monoglyceride, and succinic acid monoglyceride; the fatty amide is selected from at least one of oleamide, erucamide, N-(4-hydroxyphenyl) stearic acid amide, and fatty acid diethanolamide; the polyether is selected from at least one of polyoxyethylene ether, epoxypropyl-terminated polyether, and propylene glycol block polyether.

7. The diamond wire cutting fluid according to claim 6, characterized in that: The defoamer consists of mineral oil and polyether, wherein the mass ratio of the mineral oil to the polyether is 1:(1-10).

8. The diamond wire cutting fluid according to claim 1, characterized in that: The invention comprises, by weight, 15 to 25 parts of a surfactant, 12 to 17 parts of a wetting agent, 15 to 25 parts of a penetrant, 1 to 3 parts of a defoaming agent and 35 to 45 parts of ultrapure water.

9. The method for preparing the diamond wire cutting fluid according to any one of claims 1 to 8, characterized in that: The following steps are involved: The surfactant, wetting agent, penetrant and defoamer are weighed in parts by mass respectively and mixed, and then corresponding parts by mass of ultrapure water are added and stirred to obtain a diamond wire cutting fluid.

10. Use of the diamond wire cutting fluid according to any one of claims 1 to 8 in cutting semiconductor silicon wafers.

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