Method for preparing intelligent power module and intelligent power module

Abstract

The present invention discloses a preparation method of an intelligent power module and an intelligent power module, and the preparation method comprises the following steps: S1, fixing a power chip on a substrate, and fixing a driving chip on a frame; S2, brushing silver paste on the first electrode and the second electrode of the power chip, and the substrate, and pre-fixing the conductive parts of the frame with the first electrode, the second electrode and the substrate respectively; S3, silver sintering the substrate and the frame to obtain a power module; S4, injection molding the power module to obtain an intelligent power module. According to the preparation method of the intelligent power module of the present invention, through steps S1-S4, the aluminum wire welding process can be saved, and the phenomena of craters, non-stick bonding, and failure can be prevented, and the conductive parts are connected to the power chip or the substrate through silver paste, the connection method is simple, and the operation is convenient, and the substrate core step and the frame core step can be performed simultaneously, thereby greatly improving the packaging efficiency of the intelligent power module.

Description

Technical Field

[0001] The present invention relates to the technical field of intelligent power modules, and in particular to a preparation method of an intelligent power module and an intelligent power module. Background Art

[0002] In the related art, in the production process of intelligent power modules, thick aluminum wire is used to bond the emitter of the IGBT chip to the anode of the FRD chip and then to the power pin of the frame, and thin aluminum wire is used to bond the gate of the IGBT chip to the control pin of the frame. The wire diameter needs to be switched twice, and the number of aluminum wires is large, which is extremely time-consuming and inefficient. In addition, there may be risks such as craters, non-sticky bonding, and failure during the welding process. In addition, the power pins of existing intelligent power modules need to be bent and welded to the substrate, and the control pins need to be bonded to the driver chip, resulting in the size of the substrate being limited between the control pins and the power pins. Summary of the invention

[0003] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, one purpose of the present invention is to provide a method for preparing an intelligent power module, which saves the aluminum wire welding process, prevents the occurrence of craters, bonding non-stick, failure and the like, has a simple connection method, is easy to operate, and can greatly improve the packaging efficiency of the intelligent power module.

[0004] Another object of the present invention is to provide an intelligent power module prepared by the above preparation method.

[0005] According to the method for preparing an intelligent power module of the first aspect of the present invention, the intelligent power module comprises a substrate and a frame, wherein the frame is located on one side of the substrate in the thickness direction, and a conductive member is provided on the frame, and the conductive member extends in a direction toward the substrate;

[0006] The preparation method comprises the following steps:

[0007] S1, fixing the power chip on the substrate and the driving chip on the frame;

[0008] S2, applying silver paste to the first electrode and the second electrode of the power chip and the substrate, and pre-fixing the conductive member of the frame to the first electrode, the second electrode and the substrate respectively;

[0009] S3, performing silver sintering on the substrate and the frame to obtain a power module;

[0010] S4. Injection molding the power module to obtain the intelligent power module.

[0011] According to the preparation method of the intelligent power module of the embodiment of the present invention, through steps S1-S4, compared with the traditional preparation method of the intelligent power module, it is possible to save the aluminum wire welding process, prevent the occurrence of craters, non-stick bonding, failure and the like, and the conductive parts are connected to the power chip or substrate through silver paste, the connection method is simple and easy to operate, and the substrate core-on step and the frame core-on step can be performed simultaneously, thereby greatly improving the packaging efficiency of the intelligent power module.

[0012] According to some embodiments of the present invention, the frame includes a base island, a control pin and a power pin, the driving chip is fixed on the base island, and the conductive member includes a first conductive member and a second conductive member, the first conductive member is arranged on the control pin, and the second conductive member is arranged on the power pin; in step S2, the first conductive member is pre-fixed to the second electrode through the silver paste, and the second conductive member is pre-fixed to the first electrode through the silver paste.

[0013] According to some embodiments of the present invention, a cross-sectional area of ​​the first conductive member is smaller than a cross-sectional area of ​​the second electrode, and a cross-sectional area of ​​the second conductive member is smaller than a cross-sectional area of ​​the first electrode.

[0014] According to some embodiments of the present invention, a cross-sectional area of ​​the first conductive member is smaller than a cross-sectional area of ​​the second conductive member.

[0015] According to some embodiments of the present invention, the power chip is an RC-IGBT chip, the RC-IGBT chip has an emitter and a source, the emitter is the first electrode, the gate is the second electrode, the first conductive member is pre-fixed to the gate through the silver paste, and the second conductive member is pre-fixed to the emitter through the silver paste; or the power chip is a MOSFET chip, the MOSFET chip has a source and a gate, the source is the first electrode, the gate is the second electrode, the first conductive member is pre-fixed to the gate through the silver paste, and the second conductive member is pre-fixed to the source through the silver paste; or the second conductive member includes a first sub-conductive member and a second sub-conductive member, the power chip includes an IGBT chip and an FRD chip, the first conductive member is pre-fixed to the gate of the IGBT chip through the silver paste, the first sub-conductive member is pre-fixed to the emitter of the IGBT chip through the silver paste, and the second sub-conductive member is pre-fixed to the anode of the FRD chip through the silver paste.

[0016] According to some embodiments of the present invention, the conductive member further includes a third conductive member, and the third conductive member is disposed on the power pin; in step S2, the third conductive member is pre-fixed to the substrate by the silver paste.

[0017] According to some embodiments of the present invention, step S1 specifically includes A1 and A2.

[0018] A1: Apply the silver paste on the substrate, and the power chip is fixed on the substrate by the silver paste; A2: Apply the silver paste on the frame, and the driver chip is fixed on the frame by the silver paste.

[0019] According to some embodiments of the present invention, step A1 specifically includes:

[0020] A11, dividing the circuit layer of the substrate into a plurality of functional areas arranged at intervals;

[0021] A12, brushing the silver paste on the functional area, and pre-fixing the power chip on the functional area by the silver paste;

[0022] A13. Sintering the substrate and the power chip.

[0023] According to some embodiments of the present invention, step A2 specifically includes:

[0024] A21, brushing the silver paste on the frame, and pre-fixing the driver chip on the base island by the silver paste;

[0025] A22, sintering the frame and the driver chip;

[0026] A23, welding wire, the driving chip is connected to the control pin of the frame through the conductive wire.

[0027] According to some embodiments of the present invention, before step A21, the process further includes:

[0028] A20. The conductive member is connected to the frame by ultrasonic welding, solder paste welding or the silver paste.

[0029] According to the intelligent power module of the embodiment of the second aspect of the present invention, the intelligent power module is prepared by using the preparation method of the intelligent power module of the embodiment of the first aspect of the present invention.

[0030] Additional aspects and advantages of the present invention will be given in part in the following description and in part will be obvious from the following description, or will be learned through practice of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] The above and / or additional aspects and advantages of the present invention will become apparent and easily understood from the description of the embodiments in conjunction with the following drawings, in which:

[0032] Figure 1 is a flow chart of a method for preparing an intelligent power module according to an embodiment of the present invention;

[0033] Figure 2 is a schematic diagram of a framework of an intelligent power module according to an embodiment of the present invention;

[0034] Figure 3 yes Figure 2 A top view of the frame of the intelligent power module shown;

[0035] Figure 4 yes Figure 2 A side view of a frame of the intelligent power module shown;

[0036] Figure 5 is a schematic diagram of a power module of an intelligent power module according to an embodiment of the present invention;

[0037] Figure 6 yes Figure 5 A top view of a power module of the intelligent power module shown;

[0038] Figure 7 is a schematic diagram of an intelligent power module according to an embodiment of the present invention;

[0039] Figure 8 is a schematic diagram of an intelligent power module according to another angle of the embodiment of the present invention;

[0040] Fig. 9 is a cross-sectional view of an intelligent power module according to an embodiment of the present invention;

[0041] Fig.10 Schematic diagram of a substrate and a power chip of an intelligent power module according to an embodiment of the present invention.

[0042] Reference numerals:

[0043] 100: Intelligent power module;

[0044] 110: power module; 10: substrate; 101: functional area; 20: frame; 201: base island; 202: control pin; 2021: first pin segment; 2022: second pin segment; 203: power pin; 2031: third pin segment; 2032: fourth pin segment; 30: power chip; 301: first electrode; 302: second electrode; 303: IGBT chip; 304: FRD chip; 3041: anode; 40: driver chip; 401: low-voltage driver chip; 402: high-voltage driver chip; 404: bootstrap diode; 50: conductive element; 501: first conductive element; 502: second conductive element; 5021: first sub-conductive element; 5022: second sub-conductive element; 503: third conductive element; 60: plastic package shell. DETAILED DESCRIPTION

[0045] Reference below Figure 1-Figure 10Describe the method for preparing the intelligent power module 100 according to the first embodiment of the present invention

[0046] like Figure 2-Figure 10 As shown, the intelligent power module 100 includes a substrate 10 and a frame 20, wherein the frame 20 is located in the thickness direction of the substrate 10 (eg, Figure 8 The frame 20 is provided with a conductive member 50 on one side (in the left-right direction), and the conductive member 50 extends in the direction toward the substrate 10. The conductive member 50 is located on the side of the frame 20 adjacent to the substrate 10, and is used to achieve the connection between the frame 20 and the power chip 30 on the substrate 10.

[0047] like Figure 1 As shown, the method for preparing the intelligent power module 100 according to the first embodiment of the present invention comprises the following steps:

[0048] S1. Fix the power chip 30 on the substrate 10, and fix the driving chip 40 on the frame 20. That is, the core-loading step of the substrate 10 and the core-loading step of the frame 20 can be performed simultaneously, and the core-loading step of the substrate 10 and the core-loading step of the frame 20 can not interfere with each other, so that the core-loading efficiency can be improved, and then the packaging efficiency of the intelligent power module 100 can be improved.

[0049] S2, silver paste is applied to the first electrode 301 and the second electrode 302 of the power chip 30, and the substrate 10, and the conductive member 50 of the frame 20 is pre-fixed with the first electrode 301, the second electrode 302 and the substrate 10 respectively. In this step, the power chip 30 can be electrically connected to the frame 20 through the conductive member 50, and the frame 20 can be electrically connected to the substrate 10 through the conductive member 50. Since the conductive member 50 is located between the frame 20 and the substrate 10, the conductive member 50 is used for conduction and can play a supporting role to support the frame 20 above the substrate 10.

[0050] S3, silver sintering is performed on the substrate 10 and the frame 20 to obtain the power module 110. This step solidifies the silver paste to ensure that the conductive member 50 can be reliably connected to the first electrode 301, the second electrode 302 and the substrate 10.

[0051] S4, injection molding the power module 110 to obtain the intelligent power module 100. Thus, the substrate 10, the power chip 30, the driver chip 40 and part of the frame 20 are located in the plastic package shell 60, which can effectively separate the chip and the substrate 10 from the outside world and prevent the external environment from impacting the chip and the substrate 10. Optionally, the plastic package shell 60 can be made of epoxy resin material, but is not limited thereto.

[0052] Optionally, the substrate 10 can be a ceramic copper-clad board, which includes a first copper layer (circuit layer) 102, a ceramic layer 103 (insulating layer) and a second copper layer 104 arranged along the thickness direction. The power chip 30 is connected to the first copper layer 102, and the surface of the second copper layer 104 on the side away from the power chip 30 is flush with the bottom surface of the plastic shell 60 and exposed outside the plastic shell 60. When the power chip 30 generates heat during operation, the heat can be transferred to the second copper layer 104 through the first copper layer 102 and the ceramic layer 103, and the second copper layer 104 performs heat exchange with the outside world to achieve heat dissipation of the intelligent power module 100.

[0053] According to the preparation method of the intelligent power module 100 of the embodiment of the present invention, through steps S1-S4, compared with the traditional preparation method of the intelligent power module, it is possible to save the aluminum wire welding process, prevent the occurrence of craters, non-stick bonding, failure and the like, and the conductive member 50 is connected to the power chip 30 or the substrate 10 through silver paste, the connection method is simple and easy to operate, and the core-loading step of the substrate 10 and the core-loading step of the frame 20 can be performed simultaneously, thereby greatly improving the packaging efficiency of the intelligent power module 100.

[0054] According to some embodiments of the present invention, Figure 2-Figure 6 As shown, the frame 20 includes a base island 201, a control pin 202 and a power pin 203, the driving chip 40 is fixed on the base island 201, and the conductive member 50 includes a first conductive member 501 and a second conductive member 502, the first conductive member 501 is arranged on the control pin 202, and the second conductive member 502 is arranged on the power pin 203.

[0055] For example, in Figure 2-Figure 6 In the example of FIG. 1 , the width direction of the substrate 10 (eg, Figure 6 The two sides of the substrate 10 (in the up and down direction) are respectively the control side and the power side, the control pin 202 is arranged on the control side of the substrate 10, and the power pin 203 is arranged on the power side of the substrate 10. There are seven base islands 201, and the seven base islands 201 are arranged along the length direction of the substrate 10 (for example, Figure 6 The driver chip 40 includes a low-voltage driver chip 401, three high-voltage driver chips 402, and three bootstrap diodes 404. The low-voltage driver chip 401 is disposed on the outermost base island 201 among the seven base islands 201, and the low-voltage driver chip 401 can be connected to the control pin 202 through a gold wire or a copper wire. The high-voltage driver chip 402 and the bootstrap diode 404 are connected to the control pin 202 through a gold wire or a copper wire, and the three high-voltage driver chips 402 and the three bootstrap diodes 404 are respectively disposed on the remaining six base islands 201. Of course, the control pin 202 and the low-voltage driver chip 401, the high-voltage driver chip 402, and the bootstrap diode 404 can also be connected through other materials with low resistivity.

[0056] There are multiple first conductive members 501 and second conductive members 502. In the description of the present invention, "multiple" means two or more. The first conductive member 501 is arranged on one side of the thickness direction of the control pin 202 connected to the power chip 30. The second conductive member 502 is arranged on one side of the thickness direction of the power pin 203.

[0057] In step S2, the first conductive member 501 is pre-fixed with the second electrode 302 by silver paste, and the second conductive member 502 is pre-fixed with the first electrode 301 by silver paste. Thus, the relative positions of the control pin 202 and the power pin 203 and the power chip 30 are first determined, which is conducive to the subsequent reliable connection of the control pin 202 and the power pin 203 and the power chip 30 by sintering, and the steps are simple and easy to operate.

[0058] Among them, refer to Figure 5 and Figure 7 Each control pin 202 includes a first pin segment 2021 and a second pin segment 2022 connected to each other, the second pin segment 2022 is perpendicular to the first pin segment 2021 and is located on a side of the first pin segment 2021 away from the substrate 10, the first pin segment 2021 is located inside the plastic package housing 60, and the second pin segment 2022 is located outside the plastic package housing 60. Similarly, each power pin 203 includes a third pin segment 2031 and a fourth pin segment 2032 connected to each other, the fourth pin segment 2032 is perpendicular to the third pin segment 2031 and is located on a side of the third pin segment 2031 away from the substrate 10, the third pin segment 2031 is located inside the plastic package housing 60, and the fourth pin segment 2032 is located outside the plastic package housing 60.

[0059] In the thickness direction of the substrate 10, the surface of the first pin segment 2021 away from the substrate 10, the surface of the third pin segment 2031 away from the substrate 10, and the surface of the base island 201 away from the substrate 10 are flush. Therefore, the size of the substrate 10 is not limited to between the control pin 202 and the power pin 203. Both sides of the width direction of the substrate 10 in the present application can be extended to the edge of the plastic package housing 60, which increases the size of the substrate 10 and can improve the heat dissipation efficiency of the intelligent power module 100.

[0060] According to some embodiments of the present invention, the cross-sectional area of ​​the first conductive member 501 is smaller than the cross-sectional area of ​​the second electrode 302. This arrangement ensures that the first conductive member 501 can be connected to the second electrode 302 while preventing the first conductive member 501 from being connected to other positions of the power chip 30 through the silver paste, thereby preventing a short circuit.

[0061] Similarly, the cross-sectional area of ​​the second conductive member 502 is smaller than the cross-sectional area of ​​the first electrode 301. This arrangement ensures that the second conductive member 502 can be connected to the first electrode 301 while preventing the second conductive member 502 from being connected to other positions of the power chip 30 through the silver paste, thereby preventing a short circuit.

[0062] Further, the cross-sectional area of ​​the first conductive member 501 is smaller than the cross-sectional area of ​​the second conductive member 502. Since the size of the second electrode 302 on the power chip 30 is smaller than the size of the first electrode 301, by making the cross-sectional area of ​​the first conductive member 501 smaller than the cross-sectional area of ​​the second conductive member 502, the size of the first conductive member 501 can be adapted to the size of the second electrode 302, the size of the second conductive member 502 can be adapted to the size of the first electrode 301, and the spacing between the first electrode 301 and the second electrode 302 is small, and the cross-sectional area of ​​the first conductive member 501 is smaller, which can avoid the first conductive member 501 from being connected to the first electrode 301.

[0063] According to some embodiments of the present invention, Figure 5 , Figure 6 and Fig.10 As shown, the power chip 30 is a RC-IGBT (reverse-conducting insulated gate bipolar transistor) chip, the RC-IGBT chip has an emitter and a gate, the emitter is a first electrode 301, the gate is a second electrode 302, the first conductive member 501 is pre-fixed with the gate through silver paste, and the second conductive member 502 is pre-fixed with the emitter through silver paste. Alternatively, the power chip 30 is a MOSFET (metal oxide semiconductor field effect transistor insulated gate bipolar transistor) chip (not shown), the MOSFET chip has a source and a gate, the source is the first electrode 301, the gate is the second electrode 302, the first conductive member 501 is pre-fixed with the gate through silver paste, and the second conductive member 502 is pre-fixed with the source through silver paste.

[0064] Alternatively, the second conductive member 502 includes a first sub-conductive member 5021 and a second sub-conductive member 5022, the power chip 30 includes an IGBT (insulated gate bipolar transistor) chip 303 and an FRD (fast recovery diode) chip 304, the first conductive member 501 is pre-fixed with the gate of the IGBT chip 303 through silver paste, the first sub-conductive member 5021 is pre-fixed with the emitter of the IGBT chip 303 through silver paste, and the second sub-conductive member 5022 is pre-fixed with the anode 3041 of the FRD chip 304 through silver paste. Figure 6As shown, the IGBT chip 303 and the FRD chip 304 are spaced apart along the width direction of the substrate 10, the IGBT chip 303 is arranged adjacent to the control pin 202, and the FRD chip 304 is arranged adjacent to the power pin 203, and the first sub-conductive member 5021 and the second sub-conductive member 5022 on the power pin 30 are also spaced apart along the width direction of the substrate 10, the first sub-conductive member 5021 is electrically connected to the emitter of the IGBT chip 303, and the second sub-conductive member 5022 is electrically connected to the anode 3041 of the FRD chip 304, so as to realize the electrical connection between the IGBT chip 303 and the FRD chip 304.

[0065] In this way, the type of the power chip 30 can be selected according to the usage scenario of the intelligent power module 100 , the structure of the intelligent power module 100 is more diverse, and the applicable scenarios of the intelligent power module 100 are more.

[0066] In some optional embodiments, the conductive member 50 further includes a third conductive member 503, and the third conductive member 503 is disposed on the power pin 203. In step S2, the third conductive member 503 is pre-fixed to the substrate 10 by silver paste.

[0067] Reference Figure 2 and Figure 3 There are four third conductive members 503, and the four third conductive members 503 are respectively arranged on the four power pins 203, and the four third conductive members 503 are all arranged adjacent to the edge of the substrate 10. The above-mentioned power pin 203 can be connected to the substrate 10 through the third conductive member 503. At the same time, the third conductive member 503 can cooperate with the second conductive member 502 to effectively support the power pin 203 and prevent the power pin 203 from bending.

[0068] According to some embodiments of the present invention, Figure 1 As shown, step S1 specifically includes A1 and A2.

[0069] A1: Apply silver paste on the substrate 10, and the power chip 30 is fixed on the substrate 10 by the silver paste;

[0070] A2. Silver paste is applied on the frame 20 , and the driving chip 40 is fixed on the frame 20 by the silver paste.

[0071] With such a configuration, while the power chip 30 is fixed on the substrate 10 and the driver chip 40 is fixed on the frame 20, the thermal resistance of the power chip 30 and the driver chip 40 can be reduced, thereby reducing the energy consumption of the intelligent power module 100 and preventing the intelligent power module 100 from overheating after long-term use.

[0072] According to some specific embodiments of the present invention, Figure 1 As shown, step A1 specifically includes:

[0073] A11. Divide the circuit layer of the substrate 10 into a plurality of functional areas 101 arranged at intervals. For example, the first copper layer 102 of the substrate 10 is divided into four functional areas 101, and the four functional areas 101 are spaced apart along the length direction of the substrate 10. The four functional areas 101 are sequentially a first area, a second area, a third area, and a fourth area along the length direction of the substrate 10. A power chip 30 is provided in each of the first area, the second area, and the third area, and three power chips 30 are provided in the fourth area. The three power chips 30 are spaced apart along the length direction of the substrate 10.

[0074] A12, brushing silver paste on the functional area 101, the power chip 30 is pre-fixed on the functional area 101 by the silver paste;

[0075] A13. Sinter the substrate 10 and the power chip 30.

[0076] Therefore, through the above steps A11 to A13, the multiple power chips 30 can be fixed in the multiple functional areas 101 respectively, thereby ensuring the connection reliability between the substrate 10 and the power chips 30.

[0077] According to some specific embodiments of the present invention, step A2 specifically includes:

[0078] A21, apply silver paste on the frame 20, and pre-fix the driver chip 40 on the base island 201 by the silver paste;

[0079] A22, sintering the frame 20 and the driving chip 40;

[0080] A23, welding wire, the driving chip 40 is connected to the control pin 202 of the frame 20 through the conductive wire.

[0081] Thus, through the above steps A21-A23, multiple driver chips 40 can be fixed on multiple base islands 201 of the frame 20, respectively, ensuring the connection reliability between the base islands 201 and the driver chips 40, and at the same time enabling the driver chips 40 to be electrically connected to the corresponding control pins 202. The driver chips 40 can be bonded to the corresponding control pins 202 through aluminum wires with thin wire diameters.

[0082] According to some embodiments of the present invention, before step A21, the process further includes:

[0083] A20, the conductive member 50 is connected to the frame 20 by ultrasonic welding, solder paste welding or silver paste. This step makes the conductive member 50 and the frame 20 connected as a whole, which is convenient for the subsequent connection of the conductive member 50 and the power chip 30.

[0084] Optionally, the frame 20 and the conductive member 50 may be made of copper material, but the invention is not limited thereto.

[0085] like Figure 6-Figure 8 As shown, according to the intelligent power module 100 according to the second aspect of the embodiment of the present invention, the intelligent power module 100 is prepared by the preparation method of the intelligent power module 100 according to the first aspect of the embodiment of the present invention.

[0086] According to the intelligent power module 100 of the embodiment of the present invention, the intelligent power module 100 is manufactured by adopting the above manufacturing method, which can improve the flow capacity and heat dissipation effect of the intelligent power module 100 and reduce the energy consumption of the intelligent power module 100.

[0087] Other structures and operations of the intelligent power module 100 according to the embodiment of the present invention are known to those skilled in the art and will not be described in detail here.

[0088] In the description of the present invention, it should be understood that the terms "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating orientations or positional relationships, are based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the present invention.

[0089] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "conductive" should be understood in a broad sense, for example, it can be fixed conductive, detachable conductive, or integral conductive; it can be mechanical conductive, or electrical conductive; it can be directly connected, or indirectly connected through an intermediate medium, or it can be internal communication between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0090] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples", or "some examples" means that the specific features, structures, materials, or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example.

[0091] Although the embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the claims and their equivalents.

Claims

1. A method for preparing an intelligent power module, characterized in that: The intelligent power module comprises a substrate and a frame, wherein the frame is located at one side of the substrate in a thickness direction, and a conductive member is disposed on the frame, and the conductive member extends in a direction toward the substrate; The preparation method comprises the following steps: S1, fixing the power chip on the substrate and the driving chip on the frame; S2, applying silver paste to the first electrode and the second electrode of the power chip and the substrate, and pre-fixing the conductive member of the frame to the first electrode, the second electrode and the substrate respectively; S3, performing silver sintering on the substrate and the frame to obtain a power module; S4, performing injection molding on the power module to obtain the intelligent power module; The frame includes a base island, a control pin and a power pin, the end of the power pin extends to the control pin in the width direction of the substrate, some of the power pins are connected to the corresponding control pins, the driving chip is fixed on the base island, and the conductive member includes a first conductive member and a second conductive member, the first conductive member is arranged on the control pin, and the second conductive member is arranged on the power pin; In step S2, the first conductive member is pre-fixed to the second electrode via the silver paste, and the second conductive member is pre-fixed to the first electrode via the silver paste; The control pin includes a first pin segment and a second pin segment connected to each other, the power pin includes a third pin segment and a fourth pin segment connected to each other, the first pin segment and the third pin segment are located inside the plastic package, and the second pin segment and the fourth pin segment are located outside the plastic package; In the thickness direction of the substrate, a surface of the first lead segment away from the substrate, a surface of the third lead segment away from the substrate, and a surface of the base island away from the substrate are flush.

2. The method for preparing an intelligent power module according to claim 1, characterized in that: The cross-sectional area of ​​the first conductive member is smaller than the cross-sectional area of ​​the second electrode, and A cross-sectional area of ​​the second conductive member is smaller than a cross-sectional area of ​​the first electrode.

3. The method for preparing an intelligent power module according to claim 2, characterized in that: A cross-sectional area of ​​the first conductive member is smaller than a cross-sectional area of ​​the second conductive member.

4. The method for preparing an intelligent power module according to claim 1, wherein the power chip is an RC-IGBT chip, the RC-IGBT chip has an emitter and a gate, the emitter is the first electrode, the gate is the second electrode, the first conductive member is pre-fixed to the gate through the silver paste, and the second conductive member is pre-fixed to the emitter through the silver paste; or The power chip is a MOSFET chip, the MOSFET chip has a source and a gate, the source is the first electrode, the gate is the second electrode, the first conductive member is pre-fixed to the gate through the silver paste, and the second conductive member is pre-fixed to the source through the silver paste; or The second conductive member includes a first sub-conductive member and a second sub-conductive member, the power chip includes an IGBT chip and an FRD chip, the first conductive member is pre-fixed to the gate of the IGBT chip through the silver paste, the first sub-conductive member is pre-fixed to the emitter of the IGBT chip through the silver paste, and the second sub-conductive member is pre-fixed to the anode of the FRD chip through the silver paste.

5. The method for preparing an intelligent power module according to claim 1, characterized in that: The conductive member further comprises a third conductive member, and the third conductive member is arranged on the power pin; In step S2, the third conductive member is pre-fixed to the substrate via the silver paste.

6. The method for preparing an intelligent power module according to any one of claims 1 to 5, characterized in that: Step S1 specifically includes A1 and A2. A1: Apply the silver paste on the substrate, and fix the power chip on the substrate through the silver paste; A2. The silver paste is applied on the frame, and the driving chip is fixed on the frame by the silver paste.

7. The method for preparing an intelligent power module according to claim 6, characterized in that: Step A1 specifically includes: A11, dividing the circuit layer of the substrate into a plurality of functional areas arranged at intervals; A12, brushing the silver paste on the functional area, and pre-fixing the power chip on the functional area by the silver paste; A13. Sintering the substrate and the power chip.

8. The method for preparing an intelligent power module according to claim 6, characterized in that: Step A2 specifically includes: A21, brushing the silver paste on the frame, and pre-fixing the driver chip on the base island by the silver paste; A22, sintering the frame and the driver chip; A23, welding wire, the driving chip and the control pin of the frame are wire-bonded by conductive wires.

9. The method for preparing an intelligent power module according to claim 8, characterized in that: Before step A21, the following steps are also included: A20. The conductive member is connected to the frame by ultrasonic welding, solder paste welding or the silver paste.

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