Plasma etching device and plasma etching method

Abstract

The present application discloses a plasma etching device and a plasma etching method, which relate to the field of plasma etching technology. The plasma etching device comprises: a cavity, the top of which is provided with an opening for allowing the plasma of the main etching gas to enter; a first uniform gas grid, connected to the inner top of the cavity and covering the opening; a second uniform gas grid, located below the first uniform gas grid and connected to the inner side wall of the cavity; at least one air intake regulating device, the air intake regulating device comprises an air intake component, the air intake component is provided on the inner side wall of the cavity between the first uniform gas grid and the second uniform gas grid, and is provided with at least one air intake channel for connecting the outside and the cavity with auxiliary regulating gas. The plasma etching device described in the present application can adjust the etching uniformity.

Description

Technical Field

[0001] The present application relates to the technical field of plasma etching, and in particular to a plasma etching device and a plasma etching method. Background Art

[0002] In a typical plasma etching process, different process gases (such as CxFy, NF3, O2, Ar, etc.) are combined in a radio frequency environment to form plasma through radio frequency excitation. Under the action of the electric field of the upper and lower electrodes in the etching chamber, the plasma physically bombards and chemically reacts with the surface of the object to be etched (such as a wafer), thereby completing the pattern design and key process processing of the surface of the object to be etched.

[0003] When using the existing plasma etching device to etch the surface of the object to be etched, there is still a problem of poor etching uniformity. Therefore, it is necessary to improve the plasma etching device to improve the etching uniformity. Summary of the invention

[0004] The technical problem solved by the present application is to provide a plasma etching device and a plasma etching method, which can adjust the etching uniformity.

[0005] In order to solve the above technical problems, this application provides the following technical solutions:

[0006] In the first aspect, the technical solution of the present application provides a plasma etching device, comprising: a cavity, the top of which is provided with an opening allowing the plasma of the main etching gas to enter; a first gas uniformity grid connected to the inner top of the cavity and covering the opening; a second gas uniformity grid located below the first gas uniformity grid and connected to the inner side wall of the cavity; at least one air intake regulating device, the air intake regulating device comprising an air intake assembly, the air intake assembly being arranged on the inner side wall of the cavity between the first gas uniformity grid and the second gas uniformity grid, and being provided with at least one air intake channel for auxiliary regulating gas connecting the outside and the cavity.

[0007] In some embodiments of the first aspect, the air inlet channel includes: an air inlet section, which is connected to the outside; and an air outlet section, which is connected to the air inlet section and the cavity, and the axis of the air outlet section is collinear or intersecting with the axis of the air inlet section.

[0008] In some embodiments of the first aspect, the angle between the axis of the air outlet section and the horizontal line is 0° to 90°.

[0009] In some embodiments of the first aspect, the air intake assembly is provided with at least two air intake passages having axes of the air outlet sections having different angles with a horizontal line.

[0010] In some embodiments of the first aspect, the air intake regulating device further includes: a first regulating component, which is connected to the air intake component and is used to adjust the position of the air intake component to switch the air intake channel.

[0011] In some embodiments of the first aspect, the first adjustment component includes: a connecting portion, which passes through the top of the cavity and one end of which is connected to the air intake component; a driving portion, which is located outside the cavity and connected to the other end of the connecting portion, and when the driving portion is working, it drives the connecting portion to move, thereby adjusting the position of the first adjustment component.

[0012] In some embodiments of the first aspect, a gas supply channel is further provided in the side wall of the cavity, and the gas supply channel is communicated with one of the gas inlet channels for supplying the auxiliary regulating gas.

[0013] In some embodiments of the first aspect, the intake regulating device further includes: a second regulating component, and the second regulating component is used to regulate the intake flow rate of the auxiliary regulating gas.

[0014] In some embodiments of the first aspect, the plasma etching device also includes: a plasma source coil dielectric window, which is arranged at the opening and connected to the cavity, and the top of the plasma source coil dielectric window is provided with an inlet hole for a main etching gas that is connected to the opening; and / or, a plasma excitation coil, which is arranged on the outside of the plasma source coil dielectric window; and / or, a hot platform for carrying an object to be etched, which is arranged in the cavity and located below the second uniform gas grid.

[0015] In a second aspect, the present application provides a plasma etching method, which uses a plasma etching device as described in any one of the above items, and the method includes the following steps: allowing the plasma of the main etching gas to enter the cavity, wherein the plasma undergoes a first dissociation when passing through a first uniform gas grid; introducing an auxiliary regulating gas into the cavity through an air inlet channel, wherein the auxiliary regulating gas is used to perform a second dissociation on the plasma to adjust the distribution of the plasma, and the plasma that has undergone the second dissociation and the auxiliary regulating gas pass through a second uniform gas grid to etch the object to be etched.

[0016] In some embodiments of the second aspect, the method further includes: before introducing the auxiliary regulating gas into the chamber, switching different inlet channels by adjusting the position of the inlet assembly, and / or adjusting the inlet flow rate of the auxiliary regulating gas to adjust the distribution of the plasma.

[0017] Compared with the prior art, the plasma etching device and plasma etching method of the present application have the following beneficial effects:

[0018] The plasma etching device of the present application is provided with an air intake component of an air intake regulating device on the inner side wall of a cavity between a first gas uniformizing grid and a second gas uniformizing grid, and the air intake component is provided with at least one air intake channel for auxiliary regulating gas connecting the outside and the cavity. The auxiliary regulating gas is introduced through the side wall of the cavity, which can not only assist the etching, but also regulate the distribution of the plasma, thereby achieving the adjustment of the etching uniformity.

[0019] Furthermore, by making the air inlet channel include an air inlet section and an air outlet section, and making the air inlet assembly have at least two air inlet channels whose axes of the air outlet sections have different angles with the horizontal line, the air inlet angle of the auxiliary regulating gas can be adjusted by switching different air inlet channels, and then the distribution of the plasma can be adjusted, thereby achieving the adjustment of the etching uniformity.

[0020] Furthermore, the plasma etching device of the present application can also adjust the distribution of plasma by adjusting the inlet flow rate of the auxiliary regulating gas, thereby achieving the adjustment of the etching uniformity.

[0021] In summary, compared with the existing plasma etching device, the plasma etching device of the present application has stronger adjustability for etching uniformity, a larger adjustment range, stronger adaptability, and a convenient adjustment process, and is very suitable for industrial applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The following drawings describe in detail the exemplary embodiments disclosed in this application. The same reference numerals represent similar structures in several views of the drawings. Those skilled in the art will understand that these embodiments are non-limiting, exemplary embodiments, and the drawings are only used for the purpose of illustration and description, and are not intended to limit the scope of this application. Other embodiments may also accomplish the inventive intent in this application. It should be understood that the drawings are not drawn to scale. Among them:

[0023] Figure 1 A schematic cross-sectional view of a plasma etching device according to an embodiment of the present application;

[0024] Figure 2 This is a schematic cross-sectional view of the air intake regulating device according to an embodiment of the present application;

[0025] Figure 3 It is a schematic cross-sectional structure diagram of another plasma etching device according to an embodiment of the present application. DETAILED DESCRIPTION

[0026] The following description provides specific application scenarios and requirements of the present application, with the purpose of enabling those skilled in the art to make and use the content in the present application. It will be apparent to those skilled in the art that various local modifications to the disclosed embodiments are apparent, and the general principles defined herein may be applied to other embodiments and applications without departing from the spirit and scope of the present application. Therefore, the present application is not limited to the embodiments shown, but to the widest scope consistent with the claims.

[0027] Etching uniformity is related to the reaction rate of plasma, which in turn is related to the distribution of plasma. The more evenly the plasma is distributed above the surface of the object to be etched, the more consistent the etching rates of various areas on the surface of the object to be etched will be. This will help reduce the morphological differences on the surface of the object to be etched due to uneven etching rates, that is, improve etching uniformity. Currently, there are also related methods that adjust the distribution of plasma by changing the parameters of the uniform gas grid. However, this method is not ideal for improving etching uniformity. At the same time, this method requires replacing the uniform gas grid to adjust the etching uniformity, which is very inconvenient in actual use.

[0028] In view of this, the present application sets the air inlet channel of the auxiliary regulating gas at a specific position between the two uniform gas grids, so that the auxiliary regulating gas can not only assist in etching, but also adjust the distribution of plasma, thereby adjusting the etching uniformity of the plasma etching device.

[0029] refer to Figure 1 and Figure 2 The plasma etching device of the embodiment of the present application includes: a chamber 100, a first uniform gas grid 200, a second uniform gas grid 300 and at least one gas inlet regulating device 400. The chamber 100 is used as a place where plasma is distributed and etching occurs, and an opening 110 is provided on the top thereof, and the opening 110 allows the plasma of the main etching gas 1 to enter. The size of the opening 110 is not required and is designed according to actual conditions. The main etching gas 1 can be a reaction gas commonly used in plasma etching processes, such as oxygen.

[0030] The first gas uniformity grid 200 is connected to the inner top of the cavity 100 and covers the opening 110. The gas uniformity holes provided in the first gas uniformity grid 200 allow the plasma to pass through, and can dissociate the incoming plasma for the first time, thereby adjusting the distribution of the plasma in the cavity 100. The present application does not limit the distribution mode and aperture of the gas uniformity holes, so the first gas uniformity grid 200 can adopt a conventional grid structure. In some embodiments, the gas uniformity holes of the first gas uniformity grid 200 are evenly distributed, and the aperture is 1mm~6mm. In some preferred embodiments, the installation space of the air intake adjustment device 400 is reserved between the two ends of the first gas uniformity grid 200 and the two side walls of the cavity 100.

[0031] The air intake regulating device 400 is used to dissociate the plasma for the second time. The air intake regulating device 400 includes an air intake component 410, and the air intake component 410 is arranged on the inner side wall of the cavity 100 between the first uniform gas grid 200 and the second uniform gas grid 300. The air intake component 410 is provided with at least one air intake channel 411 for connecting the auxiliary regulating gas 2 of the outside and the cavity 100. The auxiliary regulating gas 2 enters the cavity 100 through the air intake channel 411, and can dissociate the plasma passing through the first uniform gas grid 200 for the second time, thereby adjusting the distribution of the plasma again. The auxiliary regulating gas 2 can be an inert gas, such as helium. Therefore, the present application can not only play the auxiliary etching role of the auxiliary regulating gas 2, but also play the role of adjusting the distribution of plasma by allowing the auxiliary regulating gas 2 to enter the space between the two uniform gas grids. The specific structure of the air intake channel 411 is not required, and it is sufficient to be able to pass the auxiliary regulating gas 2 into the cavity 100.

[0032] The second uniform gas grid 300 is located below the first uniform gas grid 200 and is connected to the inner side wall of the cavity 100. The second uniform gas grid 300 is also provided with a plurality of uniform gas holes to allow plasma and auxiliary regulating gas 2 to pass through. After passing through the second uniform gas grid 300, the distribution of plasma and auxiliary regulating gas 2 can be further adjusted. The present application does not limit the distribution mode and aperture of the uniform gas holes of the second uniform gas grid 300, and a conventional grid structure can be used. In some embodiments, the uniform gas holes of the second uniform gas grid 300 are evenly distributed, and the aperture is 1 mm to 6 mm.

[0033] In some preferred embodiments, the distance between the first gas uniformizing grid 200 and the second gas uniformizing grid 300 is 2 mm to 10 mm, the distance from the geometric center of the air outlet of the air inlet channel 411 to the plane where the bottom surface of the first gas uniformizing grid 200 is located is 20 mm to 60 mm, and the distance to the top surface of the second gas uniformizing grid 300 is 20 mm to 60 mm.

[0034] In some preferred embodiments, the density of the gas uniforming holes of the first gas uniforming grid 200 gradually increases from the geometric center of the first gas uniforming grid 200 toward the edge, and the gas uniforming holes of the second gas uniforming grid 300 are evenly distributed, thereby making the etching rate at the edge of the object to be etched higher than the etching rate at the center.

[0035] When the structures of the first uniform gas grid 200 and the second uniform gas grid 300 are certain, if the intake flow rate of the auxiliary regulating gas 2 is changed, the pressure and gas proportion in the cavity will be changed, so that the distribution of the plasma will change, and then the etching rate will be adjusted. When the intake angle of the auxiliary regulating gas 2 changes, the distribution of the auxiliary regulating gas 2 in the cavity will change accordingly, so that the distribution of the plasma will change, and then the etching rate will be adjusted. It can be seen that the present application can adjust the relative etching rate of the edge and center of the object to be etched by adjusting the intake angle and / or intake flow rate of the auxiliary regulating gas 2, so that the etching rates of various areas on the surface of the object to be etched tend to be consistent. Therefore, the first uniform gas grid 200, the second uniform gas grid 300 and the intake regulating device 400 of the present application cooperate with each other to play a role in adjusting the etching rate.

[0036] Specifically, if the etching rate of the edge of the object to be etched is to be reduced, the gas flow rate of the auxiliary regulating gas 2 can be increased, and / or the intake angle can be adjusted to make it closer to the second uniform gas grid 300; conversely, if the etching rate of the edge is to be increased, the gas flow rate of the auxiliary regulating gas 2 can be reduced, and / or the intake direction can be adjusted to make it further away from the second uniform gas grid 300.

[0037] refer to Figure 2 The air inlet channel 411 includes an air inlet section 411a and an air outlet section 411b, wherein the air inlet section 411a is connected to the outside, and the air outlet section 411b is connected to the air inlet section 411a and the cavity 100, and the axis of the air outlet section 411b is collinear or intersecting with the axis of the air inlet section 411a. That is, the axis of the air outlet section 411b and the air inlet section 411a may be on the same straight line. In some embodiments, the axes of the two are collinear and parallel to the horizontal line, such as Figure 2As shown in FIG. (a), it is not necessary to distinguish between the air inlet section 411a and the air outlet section 411b. Alternatively, the axes of the air outlet section 411b and the air inlet section 411a are not on the same straight line, that is, the air outlet section 411b is bent relative to the air inlet section 411a in a direction away from the axis of the air inlet section 411a, as shown in FIG. Figure 2 Specifically, Figure 2 The air outlet section 411 b shown in FIG. 2 (b) is bent relative to the air inlet section 411 a in a direction away from the axis of the air inlet section 411 a and close to the first air homogenizing grid 200 , that is, it is bent upward. Figure 2 The air outlet section 411 b shown in FIG. 2 (c) is bent relative to the air inlet section 411 a in a direction away from the axis of the air inlet section 411 a and away from the first air homogenizing grid 200 , that is, it is bent downward.

[0038] The angle α between the axis of the gas outlet section 411b and the horizontal line is 0° to 90°. By adjusting the size of the angle α, the gas inlet angle can be adjusted, thereby further adjusting the distribution of the plasma, and then adjusting the etching rate. It is easy to understand that in order to achieve the function of auxiliary regulating gas connecting the outside and the chamber 100, when the axis of the gas inlet section 411a is collinear with the horizontal line, and the gas outlet section 411b is bent upward relative to the gas inlet section 411a, the angle α between the axis of the gas outlet section 411b and the horizontal line should be less than 90°.

[0039] In the present application, when the structures of the first uniform gas grid 200 and the second uniform gas grid 300 and the air intake flow rate are constant, if the outlet section 411b is bent upward, the etching rate at the edge can be relatively reduced by reducing the angle α, and the etching rate at the edge can be relatively increased by increasing the angle α; if the outlet section 411b is bent downward, the etching rate at the edge can be relatively increased by reducing the angle α, and the etching rate at the edge can be relatively reduced by increasing the angle α.

[0040] For example, a structure that is co-linear with the axis of the air outlet section 411b and the air inlet section 411a and parallel to the horizontal line (eg Figure 2 Compared with FIG. (a), when the air outlet section 411b is bent downward and the angle α is 45° (as shown in FIG. Figure 2 (c) of the figure), the etching rate at the edge of the object to be etched will be lower. This is because the auxiliary regulating gas enters from the side of the chamber. As the angle α increases, more auxiliary regulating gas will be concentrated at the edge, which makes the number of high-energy groups in the plasma at the edge smaller, thereby reducing the etching rate at the edge.

[0041] refer to Figure 3In some preferred embodiments, the air inlet component 410 is provided with at least two air inlet channels with different angles α between the axis of the air outlet section 411b and the horizontal line. Thus, the air inlet angle can be adjusted by switching the air inlet channel connected to the outside, thereby adjusting the distribution of the plasma, thereby achieving the adjustment of the etching rate. As an example, the air inlet component 410 is provided with a first air inlet channel 4111 and a second air inlet channel 4112, and the angle between the air outlet section of the first air inlet channel 4111 and the horizontal line is different from the angle between the air outlet section of the second air inlet channel 4112 and the horizontal line.

[0042] Combination Figure 1 and Figure 3 , the air intake regulating device further includes: a first regulating component, which is connected to the air intake component 410 and is used to adjust the position of the air intake component 410 to switch the air intake channel 411. In some preferred embodiments, the first regulating component includes: a connecting portion 420 and a driving portion (not shown), the connecting portion 420 passes through the top of the cavity 100, and one end of the connecting portion 420 is connected to the air intake component 410, and the other end of the connecting portion 420 extends out of the cavity 100. The driving portion is located outside the cavity 100 and is connected to the other end of the connecting portion 420. When the driving portion is working, it drives the connecting portion 420 to move, thereby adjusting the position of the first regulating component. The driving portion can be any form of driving structure, such as a hydraulic control mechanism, a pneumatic control mechanism or a mechanical control mechanism.

[0043] In some embodiments, a gas supply channel 500 is further provided in the side wall of the cavity 100 , and the gas supply channel 500 is connected to one of the gas inlet channels 411 for supplying the auxiliary regulating gas 2 .

[0044] In some preferred embodiments, the air intake regulating device further comprises: a second regulating component (not shown), the second regulating component being used to regulate the air intake flow rate of the auxiliary regulating gas. The specific structure and installation position of the second regulating component are not particularly limited, and it is sufficient that the second regulating component can regulate the air intake flow rate. For example, the second regulating component can be a common air intake valve.

[0045] In some embodiments, the plasma etching device also includes: a plasma source coil dielectric window 600, which is arranged at the opening 110 and connected to the cavity 100, and a gas inlet 610 for the main etching gas 1 communicating with the opening 110 is opened at the top of the plasma source coil dielectric window 600.

[0046] In some embodiments, the plasma etching device further includes: a plasma excitation coil 700, which is disposed outside the plasma source coil dielectric window 600. When the main etching gas 1 enters the gas inlet 610, plasma is formed under the excitation of the plasma excitation coil 700, and a large amount of plasma gathers into a plasma cloud 3.

[0047] In some embodiments, the plasma etching device further includes a heat stage 800 for carrying the object to be etched 900. The heat stage 800 is disposed in the chamber 100 and below the second gas uniformity grid 300.

[0048] In some embodiments, the bottom of the chamber 100 is also provided with gas outlets for plasma and auxiliary regulating gas.

[0049] In some embodiments, the plasma etching device further includes: a third regulating component, wherein the third regulating component is used to adjust the intake flow rate of the main etching gas, thereby adjusting the distribution of the plasma.

[0050] The present application also provides a plasma etching method, which uses the above-mentioned plasma etching device and comprises the following steps:

[0051] S1: allowing the plasma of the main etching gas to enter the chamber, wherein the plasma undergoes a first dissociation when passing through a first uniform gas grid;

[0052] S2: introducing an auxiliary regulating gas into the cavity through an air inlet channel, wherein the auxiliary regulating gas is used to perform a second dissociation on the plasma to adjust the distribution of the plasma, and etching the object to be etched after the second dissociated plasma and the auxiliary regulating gas pass through a second uniform gas grid.

[0053] It should be noted that there is no requirement for the order of the step of allowing the plasma of the main etching gas to enter the cavity and the step of introducing the auxiliary regulating gas into the cavity.

[0054] In some embodiments, the plasma of the main etching gas is first allowed to enter the cavity, and then the auxiliary regulating gas is introduced into the cavity through the air inlet channel. In other embodiments, the auxiliary regulating gas is first introduced into the cavity through the air inlet channel, and then the plasma of the main etching gas is allowed to enter the cavity. In some other embodiments, these two steps are performed simultaneously. In practical applications, the above steps can be controlled by the second regulating component and the third regulating component.

[0055] In some embodiments, the method further includes: before introducing the auxiliary regulating gas into the chamber, switching different inlet channels by adjusting the position of the inlet assembly, and / or adjusting the inlet flow rate of the auxiliary regulating gas to adjust the distribution of the plasma.

[0056] In some embodiments, the method further includes: before introducing the auxiliary regulating gas into the chamber, adjusting the inlet flow rate of the main etching gas.

[0057] Compared with the existing plasma etching method, the plasma etching method of the present application can not only assist in etching but also adjust the plasma distribution when the auxiliary regulating gas is introduced. Furthermore, by adjusting the inlet angle and inlet flow rate of the auxiliary regulating gas, it can also adjust the plasma distribution. Therefore, the adjustability of etching uniformity is greatly improved.

[0058] The basic concepts have been described above. Obviously, for those skilled in the art, the above detailed disclosure is only for example and does not constitute a limitation of this specification. Although not explicitly stated here, those skilled in the art may make various modifications, improvements and corrections to this application. Such modifications, improvements and corrections are suggested in this specification, so such modifications, improvements and corrections still belong to the spirit and scope of the exemplary embodiments of this application.

[0059] It should be noted that in the description of this application, unless otherwise clearly specified and limited, the terms "install", "connect", "connect", and "fix" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a rotating connection or a sliding connection; it can be directly connected or indirectly connected through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood in combination with specific circumstances.

[0060] In addition, when terms such as "first", "second", and "third" are used in the specification of this application to describe various features, these terms are only used to distinguish these features and cannot be understood as indicating or implying the relationship between the features, the relative importance, or implicitly indicating the number of features indicated.

[0061] In addition, the present specification describes exemplary embodiments by reference to idealized exemplary cross-sectional views and / or plan views and / or stereograms. Therefore, differences from the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are foreseeable. Therefore, the exemplary embodiments should not be interpreted as being limited to the shapes of the regions shown herein, but should include deviations in shapes caused by, for example, manufacturing. Therefore, the regions shown in the figures are schematic in nature, and their shapes are not intended to illustrate the actual shapes of the regions of the device nor to limit the scope of the exemplary embodiments.

[0062] At the same time, the present application uses specific words to describe the embodiments of this specification. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in the present application does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0063] Similarly, it should be noted that in order to simplify the description of the disclosure of this application and thus help understand one or more embodiments of the invention, in the above description of the embodiments of this application, multiple features are sometimes combined into one embodiment, figure or description thereof. However, this disclosure method does not mean that the features required by the object of this application are more than the features mentioned in the claims. In fact, the features of the embodiments are less than all the features of the single embodiment disclosed above.

[0064] Finally, it should be understood that the embodiments described in this application are only used to illustrate the principles of the embodiments of the present application. Other variations may also fall within the scope of the present application. Therefore, as an example and not a limitation, the alternative configurations of the embodiments of the present application may be considered to be consistent with the teachings of the present application. Accordingly, the embodiments of the present application are not limited to the embodiments explicitly introduced and described in the present application.

Claims

1. A plasma etching device, characterized in that: include: A cavity, wherein the top of the cavity is provided with an opening for allowing the plasma of the main etching gas to enter; A first gas uniformity grid connected to the inner top of the cavity and covering the opening; A second gas-uniform grid is located below the first gas-uniform grid and connected to the inner wall of the cavity; At least one air intake regulating device, the air intake regulating device comprising an air intake assembly, the air intake assembly being arranged on the inner side wall of the cavity between the first air uniformity grid and the second air uniformity grid, and being provided with at least one air intake channel for connecting the outside with the auxiliary regulating gas of the cavity, and the air intake channel comprising: An air intake section, the air intake section being communicated with the outside; An air outlet section is connected to the air inlet section and the cavity, and the axis of the air outlet section is collinear or intersecting with the axis of the air inlet section; The air intake assembly is provided with at least two air intake passages whose axes of the air outlet sections have different angles with the horizontal line.

2. The plasma etching device according to claim 1, characterized in that: The included angle between the axis of the air outlet section and the horizontal line is 0° to 90°.

3. The plasma etching device according to claim 1, characterized in that: The air intake regulating device further includes: a first regulating component, which is connected to the air intake component and is used to adjust the position of the air intake component to switch the air intake channel.

4. The plasma etching device according to claim 3, characterized in that: The first adjustment component comprises: A connecting portion, which passes through the top of the cavity, and one end of which is connected to the air inlet assembly; The driving part is located outside the cavity and connected to the other end of the connecting part. When the driving part is working, it drives the connecting part to move, thereby adjusting the position of the first adjusting component.

5. The plasma etching device according to claim 1, characterized in that: An air supply channel is also provided in the side wall of the cavity, and the air supply channel is communicated with one of the air inlet channels for supplying the auxiliary regulating gas.

6. The plasma etching device according to claim 1, characterized in that: The air intake regulating device further includes: a second regulating component, and the second regulating component is used to regulate the air intake flow rate of the auxiliary regulating gas.

7. The plasma etching device according to claim 1, characterized in that: The first and second gas uniformity grids are both provided with gas uniformity holes, and the density of the gas uniformity holes of the first gas uniformity grid gradually increases from the geometric center to the edge of the first gas uniformity grid, and the gas uniformity holes of the second gas uniformity grid are evenly distributed.

8. The plasma etching device according to any one of claims 1 to 7, characterized in that: The plasma etching device also includes: A plasma source coil dielectric window is disposed at the opening and connected to the cavity, and a gas inlet hole for a main etching gas communicating with the opening is provided at the top of the plasma source coil dielectric window; and / or, a plasma excitation coil, arranged outside the dielectric window of the plasma source coil; And / or, a hot stage for carrying the object to be etched is disposed in the chamber and below the second uniform gas grid.

9. A plasma etching method, characterized in that: The method uses the plasma etching device according to any one of claims 1 to 8, and the method comprises the following steps: Allowing plasma of a main etching gas to enter a cavity, wherein the plasma undergoes a first dissociation when passing through a first uniform gas grid; An auxiliary regulating gas is introduced into the cavity through an air inlet channel, wherein the auxiliary regulating gas is used to perform a second dissociation on the plasma to adjust the distribution of the plasma, and the plasma after the second dissociation and the auxiliary regulating gas pass through a second uniform gas grid to etch the object to be etched.

10. The plasma etching method according to claim 9, characterized in that: The method further includes: before introducing the auxiliary regulating gas into the chamber, switching different inlet channels by adjusting the position of an inlet assembly, and / or adjusting the inlet flow rate of the auxiliary regulating gas to adjust the distribution of the plasma.

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