Substrates, chucks and etcher

Abstract

The present application provides a substrate, a chuck and an etcher, wherein the substrate comprises: a substrate, the substrate has a first surface, a first flow channel is arranged inside the substrate, the first flow channel has a first port and a second port, the first port and the second port are both located on the first surface, the first flow channel comprises a plurality of sub-flow channels connected end to end in sequence, the plurality of sub-flow channels comprises a serpentine winding sub-flow channel, at least three U-shaped sub-flow channels and at least two arc-shaped sub-flow channels, the serpentine winding sub-flow channel is connected to the first port, and at least one arc-shaped sub-flow channel is connected to the second port. The present application can improve the temperature uniformity of the wafer to be processed during the processing of the wafer to be processed, thereby improving the processing consistency of the wafer to be processed.

Description

Technical Field

[0001] The present application relates to the field of chip processing technology, and in particular to a substrate, a chuck and an etcher. Background Art

[0002] In the process of etching the wafer to be processed by using an etcher, plasma will gather on the surface of the wafer to be processed, thereby generating a large amount of heat. Therefore, the wafer to be processed needs to be cooled, and the temperature of the wafer to be processed needs to be kept at a good uniformity to achieve etching consistency.

[0003] However, during the process of processing the wafers to be processed, the temperature uniformity of the wafers to be processed is often poor, resulting in poor processing consistency of the wafers. Summary of the invention

[0004] In order to solve the above technical problems, the present application provides a substrate, a chuck and an etcher to improve the temperature uniformity of the wafer to be processed during the processing of the wafer to be processed, thereby improving the processing consistency of the wafer to be processed.

[0005] The present application provides a substrate, comprising: a substrate, the substrate having a first surface, a first flow channel arranged inside the substrate, the first flow channel having a first port and a second port, the first port and the second port both being located on the first surface, the first flow channel comprising a plurality of sub-flow channels connected end to end in sequence, the plurality of sub-flow channels comprising at least three first sub-flow channels and a plurality of second sub-flow channels, and the first sub-flow channel being a U-shaped sub-flow channel.

[0006] The substrate provided in the present application is applied to a chuck. When the chuck is applied to an etching machine, the wafer to be processed can be placed on the chuck, and cooling water is passed into the first flow channel from the first port on the first surface, and the cooling water will flow in the first flow channel. The first flow channel includes a plurality of sub-flow channels connected end to end, so the cooling water will flow in the plurality of sub-flow channels, and finally flow out of the substrate from the second port. Since the wafer to be processed is placed on the chuck, and the wafer to be processed generates heat during the processing, when the cooling water flows in the first flow channel, the wafer to be processed can be cooled. Moreover, since the plurality of sub-flow channels include at least three U-shaped sub-flow channels and a plurality of second sub-flow channels, at least three U-shaped sub-flow channels can be connected through the second sub-flow channel, and the U-shaped sub-flow channel can increase the area proportion of the sub-flow channel in its region, thereby improving the cooling effect, thereby improving the temperature uniformity of the wafer to be processed, and then improving the processing consistency of the wafer to be processed.

[0007] In some possible implementations, at least one second sub-channel is a serpentine winding sub-channel, and the serpentine winding sub-channel is connected to the first port; the first port is closer to the center of the first surface than the second port, and there is a first distance between the center of the first port and the center of the first surface. Since the serpentine winding sub-channel is connected to the first port, the serpentine winding sub-channel is closer to the center of the first surface than other sub-channels. However, the serpentine winding sub-channel is limited by its own structure, and there is a part of the center where the sub-channel cannot be set. When there is a first distance between the center of the first port and the center of the first surface, it indicates that the first port deviates from the center of the first surface. Therefore, when the cooling water flows into the serpentine winding sub-channel from the first port, it serpentines and coils forward in the serpentine winding sub-channel, which can avoid eccentric cooling, so that the wafer to be processed can obtain better temperature uniformity.

[0008] In some possible implementations, the ratio between the first spacing and the minimum width of the first flow channel is greater than or equal to 0.5, and less than or equal to 1.5. When the ratio between the first spacing and the minimum width of the first flow channel is less than 0.5, the comparison between the first spacing and the minimum width of the first flow channel is too small, and it is difficult to improve the problem of eccentric cooling; when the ratio between the first spacing and the minimum width of the first flow channel is greater than 1.5, the ratio between the first spacing and the minimum width of the first flow channel is too large, and there will be a large area in the center position of the serpentine winding sub-flow channel where the serpentine winding sub-flow channel is not set, which will be detrimental to the cooling of the center position of the wafer to be processed. Therefore, when the ratio between the first spacing and the minimum width of the first flow channel is greater than or equal to 0.5, and less than or equal to 1.5, the ratio between the first spacing and the minimum width of the first flow channel is moderate, so that the problem of eccentric cooling can be better improved, and it is more conducive to the cooling of the center position of the wafer to be processed, thereby achieving better temperature uniformity.

[0009] In some possible implementations, the substrate further includes a flow disturbance structure, which is fixed inside the first flow channel. In this way, the flow disturbance structure inside the first flow channel can provide a flow disturbance effect for the cooling water in the first flow channel, thereby improving the cooling effect.

[0010] In some possible implementations, the first flow channel has a relative first flow channel surface and a second flow channel surface, the first flow channel surface is further away from the first surface than the second flow channel surface, and the spoiler structure is fixed to the first flow channel surface. When the substrate is applied to the chuck, the first surface serves as the bottom surface of the chuck. Since the first flow channel surface is further away from the first surface than the second flow channel surface, the first flow channel surface can be the top surface of the first flow channel, and the second flow channel surface can be the bottom surface of the first flow channel. When the cooling water flows in the first flow channel, it is affected by gravity and will apply a greater pressure toward the second flow channel surface than to the first flow channel surface. Therefore, when the spoiler structure is fixed to the first flow channel surface, it can generate less resistance to the cooling water than when it is fixed to the second flow channel surface, and it can also play a better spoiler role.

[0011] In some possible implementations, the spoiler structure includes a spoiler plate, a spoiler platform or a spoiler tooth. The spoiler plate and the spoiler platform have the characteristics of simple structure, while the spoiler tooth has the characteristics of good spoiler effect.

[0012] In some possible implementations, the substrate further includes a second surface opposite to the first surface; the size of the first part of the sub-channel along the first direction is different from the size of the second part of the sub-channel along the first direction, and the first direction is the direction from the first surface to the second surface. Since the cooling water flows in from the first port near the center of the first surface, flows to the first channel and cools the wafer to be processed, and then flows out from the second port near the edge of the first surface, the cooling water temperature inside the sub-channel at different positions is different. When the size of the first part of the sub-channel along the first direction is different from the size of the second part of the sub-channel along the first direction, a larger heat dissipation area can be provided for the cooling water in the local sub-channel, thereby improving the temperature uniformity of the wafer to be processed.

[0013] In some possible implementations, at least one second sub-channel is closer to the edge of the first surface than other second sub-channels, and the size of the second sub-channel closer to the edge of the first surface along the first direction is larger than the size of the other sub-channels along the first direction. Since the cooling water flows in from the first port close to the center of the first surface, flows to the first channel and cools the wafer to be processed, and then flows out from the second port close to the edge of the first surface, the temperature of the cooling water in the second sub-channel close to the edge of the first surface is the highest. When the size of the second sub-channel closer to the edge of the first surface along the first direction is larger than the size of the other sub-channels along the first direction, a larger heat dissipation area can be provided for the cooling water in the second sub-channel, thereby improving the temperature uniformity of the wafer to be processed.

[0014] In some possible implementations, a second flow channel is further provided inside the substrate, a through hole is provided on the first surface, the through hole is connected to the second flow channel, and the second flow channel is further away from the first surface than the first flow channel. In this way, cooling gas can be introduced into the first through hole, and the cooling gas enters the second flow channel from the through hole and flows in the second flow channel to cool the wafer to be processed. Moreover, the second flow channel is further away from the first surface than the first flow channel, so the second flow channel is layered with the first flow channel, thereby increasing the setting area of ​​the first flow channel and the second flow channel as much as possible, thereby better improving the cooling effect of the wafer to be processed.

[0015] In some possible implementations, the minimum radius of curvature of the first sub-flow channel and the second sub-flow channel is greater than or equal to 14 mm. In this way, the arc-shaped sub-flow channel can avoid the first through hole well, and when the minimum radius of curvature of the first sub-flow channel and the second sub-flow channel is greater than or equal to 14 mm, it indicates that the radius of curvature of the first sub-flow channel and the second sub-flow channel is large, thereby reducing the situation where a large resistance to the cooling water is caused.

[0016] In some possible implementations, there are multiple through holes, and the multiple through holes are staggered on both sides of the part of the first flow channel. In this way, the first flow channel can avoid at least multiple through holes well, and the sub-flow channels in the first flow channel are usually arranged densely, and the multiple through holes are staggered on both sides of the part of the first flow channel, which can also avoid the situation where multiple through holes are located on the same side of the part of the first flow channel, resulting in a close distance between the part of the first flow channel and the part of the first flow channel on the side away from the second through hole.

[0017] In some possible implementations, the second flow channel includes a third sub-flow channel, a fourth sub-flow channel, and a plurality of fifth sub-flow channels located outside the third sub-flow channel, the third sub-flow channel has an opening, and the fourth sub-flow channel is connected between at least one through hole and the opening; at least two groups of recessed portions are arranged on the side wall of the third sub-flow channel, the opening has a first distance with the first group of recessed portions, the opening has a second distance with the second group of recessed portions, and the first distance is the same as the second distance. When the cooling gas enters from the through hole and flows to the third sub-flow channel through the fourth sub-flow channel and the opening, the cooling gas will be divided into two left and right paths, one path flows to the first group of recessed portions, and the other path flows to the second group of recessed portions. Since the first distance between the opening and the first group of recessed portions is the same as the second distance between the opening and the second group of recessed portions, the flow rate of the two cooling gases divided by the cooling gas flowing in from the fourth sub-flow channel is the same, so that the cooling effect of the two cooling gases on the wafer to be processed is basically the same, thereby achieving better temperature uniformity.

[0018] The present application also provides a chuck, comprising a cover plate, glue and any one of the above substrates, wherein the cover plate is fixed to a side of the substrate away from the first surface by the glue. The chuck can achieve all the effects of the substrate.

[0019] The present application also provides an etching machine, comprising an interface plate, an air inlet flange and the above-mentioned chuck, wherein the air inlet flange is fixed to the first surface of the chuck through the interface plate. Cooling gas can enter the chuck from the air inlet flange through the interface plate. The etching machine can achieve all the effects of the chuck.

[0020] In some possible implementations, a plurality of through holes are provided on the first surface of the substrate of the chuck; the projections of the plurality of through holes on the first surface are all located within the projection range of the air inlet flange on the first surface. The plurality of through holes can all be used as air inlets. When the projections of the plurality of through holes on the first surface are all located within the projection range of the air inlet flange on the first surface, it indicates that the projections of the air inlet holes on the first surface are all located within the projection range of the air inlet flange on the first surface, and the air inlet flange can be directly fixed to the first surface of the chuck through the interface plate without the need for other adapter joints, and therefore, the structure of this solution is simpler and the assembly process is also simpler. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the description of the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 This is a schematic diagram of the structure of the etching machine in the embodiment of the present application;

[0023] Figure 2 This is a schematic diagram of the structure of the chuck in the embodiment of the present application at a first viewing angle;

[0024] Figure 3 for Figure 2 The schematic diagram of the structure of the chuck shown in the second viewing angle;

[0025] Figure 4 for Figure 3 A top view of

[0026] Figure 5 for Figure 4 AA section view;

[0027] Figure 6 for Figure 5 The enlarged schematic diagram of point D in the middle;

[0028] Figure 7a for Figure 5 Middle BB section view;

[0029] Figure 7b for Figure 7a The enlarged schematic diagram of F in the middle;

[0030] Figure 8 for Figure 5 CC section view;

[0031] Fig. 9 for Figure 3 View from the middle G direction.

[0032] Icons: 11-base; 12-inlet flange; 13-interface plate; 2-chuck; 20-substrate; 21-base; 211-first surface; 212-second surface; 213-through hole; 215-first flow channel; 2151-first port; 2152-second port; 2153-snake-shaped winding sub-flow channel; 2154-U-shaped sub-flow channel; 2155-arc-shaped sub-flow channel; 2156-tail sub-flow channel; 2157-first flow channel surface; 2158-second flow channel surface; 216-second flow channel; 2161-third sub-flow channel; 2162-fourth sub-flow channel; 2163-fifth sub-flow channel; 2164-opening; 2165-recess; 2165a-first group of recesses; 2165b-second group of recesses; 22-spoiler structure; 23-intake manifold; 30-glue; 40-cover plate; 41-cover plate through hole. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0034] The term "and / or" in this article is merely a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B can mean: A exists alone, A and B exist at the same time, and B exists alone.

[0035] The terms "first" and "second" in the description and claims of the embodiments of the present application are used to distinguish different objects rather than to describe a specific order of objects. For example, a first target object and a second target object are used to distinguish different target objects rather than to describe a specific order of target objects.

[0036] In the embodiments of the present application, words such as "exemplary" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "exemplary" or "for example" in the embodiments of the present application should not be interpreted as being more preferred or more advantageous than other embodiments or designs. Specifically, the use of words such as "exemplary" or "for example" is intended to present related concepts in a specific way.

[0037] In the description of the embodiments of the present application, unless otherwise specified, the meaning of "multiple" refers to two or more than two. For example, multiple processing units refer to two or more processing units; multiple systems refer to two or more systems.

[0038] In the field of chip processing technology, an etcher is usually used to etch the wafer to be processed. During the etching process of the wafer to be processed, plasma will gather on the surface of the wafer to be processed, thereby generating a large amount of heat. Therefore, the wafer to be processed needs to be cooled, and the temperature of the wafer to be processed needs to be kept uniform to achieve etching consistency.

[0039] like Figure 1 As shown, the etching machine may include a base 11, an air inlet flange 12, an interface plate 13, a chuck 2, a processing assembly ( Figure 1 Not shown), intake system ( Figure 1 Not shown) and the water inlet system ( Figure 1 (not shown), the air inlet flange 12 is fixed to the chuck 2 through the interface plate 13, and the chuck 2 is fixed to the base 11. The processing assembly is connected to the base 11 and is used to perform etching processing on the wafer to be processed. The air inlet system is connected to the air inlet flange 12, and the air inlet system can pass cooling gas into the interior of the chuck 2 through the air inlet flange 12 and the interface plate 13. The water inlet system can pass cooling water into the interior of the chuck 2.

[0040] like Figure 2 and Figure 3 As shown, the chuck 2 includes a base plate 20, glue 30 and a cover plate 40, wherein the cover plate 40 is fixed on the base plate 20 by the glue 30. The material of the cover plate 40 can be ceramic, so that the cover plate 40 has a good heat dissipation performance.

[0041] Before processing the wafer to be processed, the wafer to be processed is first placed on the ceramic of the chuck 2. During the processing of the wafer to be processed, the processing assembly is started to start etching the wafer to be processed. Cooling gas is introduced into the interior of the chuck 2 through the air intake system, and cooling water is introduced into the interior of the chuck 2 through the water intake system. When the cooling gas and cooling water flow inside the chuck 2, the wafer to be processed placed on the chuck 2 is cooled.

[0042] The cover plate 40 may be in a disc-shaped structure. Figure 4 As shown, a plurality of cover plate through holes 41 are provided on the surface of the cover plate 40 for allowing cooling gas to pass through. Since the wafer to be processed is placed on the cover plate 40 during the etching process of the wafer to be processed, the cooling gas can be blown into the surface of the wafer to be processed through the cover plate through holes 41 and cool the surface of the wafer to be processed.

[0043] like Figure 5As shown, the base plate 20 includes a substrate 21 , a spoiler structure 22 and an intake manifold 23 .

[0044] like Figure 5 As shown, the base 21 has a first surface 211 and a second surface 212 that are arranged opposite to each other. The first surface 211 is the bottom surface of the base 21, and the second surface 212 is the top surface of the base 21. The cover plate 40 is fixed to the second surface 212 by the glue 30. Figure 1 As shown, the first surface 211 faces the interface plate 13 and the air inlet flange 12. The first surface 211 is provided with Figure 7a The multiple through holes 213 shown are through holes 213 that penetrate from the first surface 211 to the second surface 212 , and each through hole 213 can serve as an air inlet for cooling gas.

[0045] like Fig. 9 As shown, in this embodiment, the projections of the plurality of through holes 213 on the first surface 211 are all located within the projection range of the air inlet flange 12 on the first surface 211. Fig. 9 In the figure, the dotted area is the projection range of the air intake flange 12 on the first surface 211. Each through hole 213 can be used as an air intake hole. The air intake manifold 23 can be fixed inside one of the through holes 213. In this way, when the projections of multiple through holes 213 on the first surface 211 are all located within the projection range of the air intake flange 12 on the first surface 211, it indicates that the projections of the air intake holes on the first surface 211 are all located within the projection range of the air intake flange 12 on the first surface 211, which further indicates that the projection of the air intake manifold 23 on the first surface 211 is located within the projection range of the air intake flange 12 on the first surface 211. Then, the air intake flange 12 can be directly fixed to the first surface 211 of the chuck 2 through the interface plate 13 without the need for other adapter joints. Therefore, the structure of this solution is simpler and the assembly process is also simpler.

[0046] like Figure 8 As shown, the interior of the substrate 21 is provided with a first flow channel 215, and the first flow channel 215 has a first port 2151 and a second port 2152. Fig. 9 As shown, the first port 2151 and the second port 2152 are both located on the first surface 211. The first port 2151 and the second port 2152 are both blind holes, and the first port 2151 is closer to the center of the first surface 211 than the second port 2152. The first port 2151 can be used as a water inlet for cooling water, and the second port 2152 can be used as a water outlet for cooling water.

[0047] like Figure 8As shown, the first flow channel 215 includes a plurality of sub-flow channels connected end to end in sequence. The plurality of sub-flow channels include a serpentine winding sub-flow channel 2153, at least three first sub-flow channels, a plurality of second sub-flow channels and a tail sub-flow channel 2156. The first sub-flow channel may be a U-shaped sub-flow channel 2154, and the second sub-flow channel may be an arc-shaped sub-flow channel 2155.

[0048] Among them, the serpentine winding sub-channel 2153 is located in the middle of the entire first channel 215, and the serpentine winding sub-channel 2153 is connected to the first port 2151, that is, when the cooling water enters the first channel 215 from the first port 2151, it first flows to the serpentine winding sub-channel 2153.

[0049] Among the at least three U-shaped sub-channels 2154, one U-shaped sub-channel 2154 is connected to the serpentine winding group channel, and both ends of each U-shaped sub-channel 2154 of the remaining two U-shaped sub-channels 2154 are respectively connected to an arc-shaped sub-channel 2155. In other words, every two arc-shaped sub-channels 2155 are connected through a U-shaped sub-channel 2154. The tail sub-channel 2156 is connected to the second port 2152. For example, Figure 8 As shown, the first flow channel 215 includes a serpentine winding sub-flow channel 2153, three U-shaped sub-flow channels 2154, three arc-shaped sub-flow channels 2155 and a tail sub-flow channel 2156. The cooling water entering from the first port 2151 first enters the serpentine winding sub-flow channel 2153, and then passes through the first U-shaped flow channel, the first arc-shaped sub-flow channel 2155, the second U-shaped sub-flow channel 2154, the second arc-shaped sub-flow channel 2155, the third U-shaped sub-flow channel 2154, the third arc-shaped sub-flow channel 2155 and the tail sub-flow channel 2156 in sequence, and flows out of the substrate 21 from the second port 2152.

[0050] Since the wafer to be processed is placed on the chuck 2, and the wafer to be processed generates heat during the processing, the cooling water can cool the wafer to be processed when it flows in the first flow channel 215. Moreover, since the multiple sub-flow channels include at least three U-shaped sub-flow channels 2154 and multiple second sub-flow channels, at least three U-shaped sub-flow channels can be connected through the second sub-flow channels, and the U-shaped sub-flow channel 2154 can increase the area ratio of the sub-flow channels in the area where it is located, thereby improving the cooling effect, thereby improving the temperature uniformity of the wafer to be processed, and further improving the processing consistency of the wafer to be processed.

[0051] like Fig. 9As shown, the first port 2151 is closer to the center of the first surface 211 than the second port 2152, and there is a first spacing L1 between the center of the first port 2151 and the center of the first surface 211. Since the serpentine winding sub-channel 2153 is connected to the first port 2151, the serpentine winding sub-channel 2153 is closer to the center of the first surface 211 than other sub-channels. However, the serpentine winding sub-channel 2153 is limited by its own structure, and there is a part of the center where the sub-channel cannot be set. When there is a first spacing L1 between the center of the first port 2151 and the center of the first surface 211, it indicates that the first port 2151 deviates from the center of the first surface 211. Therefore, when the cooling water flows into the serpentine winding sub-channel 2153 from the first port 2151, it serpentines and moves forward in the serpentine winding sub-channel 2153, which can avoid eccentric cooling, so that the wafer to be processed can obtain better temperature uniformity.

[0052] The ratio of the first spacing L1 to the minimum width of the first flow channel 215 is greater than or equal to 0.5 and less than or equal to 1.5. The minimum width of the first flow channel 215 may refer to the minimum value of the width W of the first flow channel 215. It is understood that Figure 6 As shown, the width W of the first flow channel 215 can be the same everywhere, but due to processing errors and other conditions, such as Figure 8 As shown, the width W in the first flow channel 215 is not the same everywhere, but has some differences. When the ratio between the first spacing L1 and the minimum width of the first flow channel 215 is less than 0.5, the comparison between the first spacing L1 and the minimum width of the first flow channel 215 is too small, and it is difficult to improve the eccentric cooling problem; when the ratio between the first spacing L1 and the minimum width of the first flow channel 215 is greater than 1.5, the ratio between the first spacing L1 and the minimum width of the first flow channel 215 is too large, and there will be a large area at the center of the serpentine winding sub-flow channel 2153 where the serpentine winding sub-flow channel 2153 is not set, which will be unfavorable for cooling the center of the wafer to be processed. Therefore, when the ratio between the first spacing L1 and the minimum width of the first flow channel 215 is greater than or equal to 0.5 and less than or equal to 1.5, the ratio between the first spacing L1 and the minimum width of the first flow channel 215 is moderate, which can better improve the problem of eccentric cooling and is more conducive to the cooling of the center position of the wafer to be processed, thereby achieving better temperature uniformity.

[0053] In addition, usually in the projection of the first flow channel 215 on the first surface 211, the distance between two adjacent sub-flow channels is basically the same as the minimum width of the first flow channel 215, or has a small difference. Therefore, when the ratio of the first spacing between the center of the first port 2151 and the center of the first surface 211 to the minimum width of the first flow channel 215 is greater than or equal to 0.5 and less than or equal to 1.5, the first spacing between the center of the first port 2151 and the center of the first surface 211 is basically the same as the minimum width of the first flow channel 215, or has a small difference.

[0054] In this embodiment, the spoiler structure 22 may include a spoiler plate, a spoiler platform or a spoiler tooth. The spoiler plate and the spoiler platform have the characteristics of simple structure; while the spoiler tooth has the characteristics of good spoiler effect. Figure 6 As shown, the flow-disturbing structure 22 is fixed inside the first flow channel 215. In this way, the flow-disturbing structure 22 inside the first flow channel 215 can provide a flow-disturbing effect for the cooling water in the first flow channel 215, thereby improving the cooling effect.

[0055] like Figure 6 As shown, the first flow channel 215 has a first flow channel surface 2157 and a second flow channel surface 2158 relative to each other. The first flow channel surface 2157 is further away from the first surface 211 than the second flow channel surface 2158, and the spoiler structure 22 is fixed to the first flow channel surface 2157. When the substrate 20 is applied to the chuck 2, the first surface 211 serves as the bottom surface of the chuck 2. Since the first flow channel surface 2157 is further away from the first surface 211 than the second flow channel surface 2158, the first flow channel surface 2157 can be the top surface of the first flow channel 215, and the second flow channel surface 2158 can be the bottom surface of the first flow channel 215. When the cooling water flows in the first flow channel 215, it will be subjected to the gravity and will apply a greater pressure toward the second flow channel surface 2158 than the first flow channel surface 2157. Therefore, when the spoiler structure 22 is fixed to the first flow channel surface 2157, it can generate less resistance to the cooling water than when it is fixed to the second flow channel surface 2158, and can also play a better spoiler role.

[0056] In this embodiment, the dimension H1 of the first part of the sub-channel along the first direction E is different from the dimension H2 of the second part of the sub-channel along the first direction E, and the first direction E is the direction from the first surface 211 to the second surface 212. Since the cooling water flows in from the first port 2151 near the center of the first surface 211, flows to the first channel 215 and cools the wafer to be processed, and then flows out from the second port 2152 near the edge of the first surface 211, the cooling water temperature inside the sub-channel at different positions is different. When the dimension H1 of the first part of the sub-channel along the first direction E is different from the dimension H2 of the second part of the sub-channel along the first direction E, a larger heat dissipation area can be provided for the cooling water in the local sub-channel, thereby improving the temperature uniformity of the wafer to be processed.

[0057] In this embodiment, if Figure 6 As shown, the dimension H1 of the arc-shaped sub-channel 2155 closer to the edge of the first surface 211 along the first direction is greater than the dimension H2 of the other sub-channels along the first direction. Since the cooling water flows in from the first port 2151 close to the center of the first surface 211, flows to the first channel 215 and cools the wafer to be processed, and then flows out from the second port 2152 close to the edge of the first surface 211, the temperature of the cooling water in the first sub-channel close to the edge of the first surface 211 is the highest. When the dimension H1 of the second sub-channel closer to the edge of the first surface 211 along the first direction E is greater than the dimension H2 of the other sub-channels along the first direction E, a larger heat dissipation area can be provided for the cooling water in the second sub-channel, thereby improving the temperature uniformity of the wafer to be processed.

[0058] like Figure 8 As shown, the minimum radius of curvature of the first flow channel 215 is greater than or equal to 14 mm. Exemplarily, the minimum radius of curvature of the serpentine winding sub-flow channel 2153, the U-shaped sub-flow channel 2154, the arc-shaped sub-flow channel 2155 and the tail sub-flow channel 2156 can all be greater than or equal to 14 mm. In this way, the arc-shaped sub-flow channel 2155 can avoid the through hole 213 well, and when the minimum radius of curvature of the first flow channel 215 is greater than or equal to 14 mm, it indicates that the radius of curvature of the first flow channel 215 is large, thereby reducing the situation where a large resistance to the cooling water is caused.

[0059] like Figure 7a As shown, the substrate 21 is further provided with a second flow channel 216, and the through hole 213 is connected to the second flow channel 216. When cooling gas is introduced into the through hole 213, the cooling gas will flow from the through hole 213 to the second flow channel 216. Figure 6As shown, the second flow channel 216 is at a different position from the first flow channel 215 along the first direction E, and the second flow channel 216 is further away from the first surface 211 than the first flow channel 215. In this way, cooling gas can be introduced into the through hole 213, and the cooling gas enters the second flow channel 216 from the through hole 213 and flows in the second flow channel 216 to cool the wafer to be processed. Moreover, the second flow channel 216 is further away from the first surface 211 than the first flow channel 215. Therefore, the second flow channel 216 and the first flow channel 215 are layered, thereby increasing the setting area of ​​the first flow channel 215 and the second flow channel 216 as much as possible, thereby better improving the cooling effect of the wafer to be processed.

[0060] like Figure 7a As shown, the second flow channel 216 includes a third sub-flow channel 2161, a fourth sub-flow channel 2162, and a plurality of fifth sub-flow channels 2163 located at the periphery of the third sub-flow channel 2161. The third sub-flow channel 2161 can form a closed flow channel or a semi-closed flow channel with an opening. The fifth sub-flow channel 2163 can also form a closed flow channel or a semi-closed flow channel with an opening. The plurality of fifth sub-flow channels 2163 are all located at the periphery of the third sub-flow channel 2161, and a fifth sub-flow channel 2163a among the plurality of fifth sub-flow channels 2163 is closest to the third sub-flow channel 2161. The number of the fifth sub-flow channel 2163 can be 3, the fifth sub-flow channel 2163b is located at the periphery of the fifth sub-flow channel 2163a, and the fifth sub-flow channel 2163c is located at the periphery of the fifth sub-flow channel 2163b. Corresponding to the number of sub-flow channels in the second flow channel 216, the number of through holes 213 can also be 4.

[0061] like Figure 7b As shown, the third sub-channel 2161 has an opening 2164, and the fourth sub-channel 2162 is connected between the through hole 213 and the opening 2164. At least two groups of recessed portions 2165 are provided on the side wall of the third sub-channel 2161, and the at least two groups of recessed portions 2165 include a first group of recessed portions 2165a and a second group of recessed portions 2165b. There is a first distance between the opening 2164 and the first group of recessed portions 2165a, and there is a second distance between the opening 2164 and the second group of recessed portions 2165b, and the first distance is the same as the second distance. When the cooling gas enters from the through hole 213 and flows to the third sub-channel 2161 through the fourth sub-channel 2162 and the opening 2164, the cooling gas will be divided into two paths, one path flows to the first group of recessed portions 2165a, and the other path flows to the second group of recessed portions 2165b. Since the first distance between the opening 2164 and the first group of recesses 2165a is the same as the second distance between the opening 2164 and the second group of recesses 2165b, the two cooling gases divided by the cooling gas flowing in from the fourth sub-channel 2162 have the same flow rate, so the cooling effects of the two cooling gases on the processed wafers are basically equivalent, thereby achieving better temperature uniformity.

[0062] like Figure 8 As shown, a plurality of through holes 213 are staggered on both sides of a portion of the first flow channel 215. When the number of through holes 213 is an even number, the number of through holes 213 on both sides of a section of the first flow channel 215 is the same; when the number of through holes 213 is an odd number, the number of through holes 213 on one side is greater than the number of through holes 213 on the other side. The staggered arrangement of a plurality of through holes 213 may refer to that the lines connecting each through hole 213 and the center of the first surface do not overlap. In this way, the first flow channel 215 can avoid the plurality of through holes 213 well. Moreover, the sub-flow channels in the first flow channel 215 are usually arranged densely. The plurality of through holes 213 are staggered on both sides of a portion of the first flow channel 215. This can also avoid the situation where the plurality of through holes 213 are located on the same side of a portion of the first flow channel 215, resulting in a closer distance between the portion of the first flow channel 215 and the portion of the first flow channel 215 on the side away from the through holes 213.

[0063] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A substrate, characterized in that: include: A base body, the base body comprising a first surface and a second surface opposite to the first surface, the second surface being used to be arranged toward the cover plate of the chuck, a first flow channel being arranged inside the base body, the first flow channel being used to circulate cooling water, the first flow channel having a first port and a second port, the first port and the second port being both located on the first surface, the first flow channel comprising a plurality of sub-flow channels connected end to end in sequence, the plurality of sub-flow channels comprising at least three first sub-flow channels and a plurality of second sub-flow channels, the first sub-flow channel being a U-shaped sub-flow channel; At least one of the second sub-flow channels is closer to the edge of the first surface than the other sub-flow channels, and the size of the second sub-flow channel closer to the edge of the first surface along the first direction is larger than the size of the other sub-flow channels along the first direction, and the first direction is the direction from the first surface to the second surface, A second flow channel is further provided inside the base, a through hole is provided on the first surface, the through hole is communicated with the second flow channel, the second flow channel is further away from the first surface than the first flow channel, the through hole is used as an air inlet for cooling gas, and the cooling gas is used to be blown into the surface of the wafer to be processed through the cover plate through hole of the cover plate; The second flow channel includes a third sub-flow channel, a fourth sub-flow channel and a plurality of fifth sub-flow channels located outside the third sub-flow channel, the third sub-flow channel has an opening, and the fourth sub-flow channel is connected between at least one of the through holes and the opening; At least two groups of recessed portions are arranged on the side wall of the third sub-channel, a first distance exists between the opening and the first group of recessed portions, a second distance exists between the opening and the second group of recessed portions, and the first distance is the same as the second distance.

2. The substrate according to claim 1, characterized in that At least one of the second sub-channels is a serpentine winding sub-channel, and the serpentine winding sub-channel is connected to the first port; The first port is closer to the center of the first surface than the second port, and there is a first distance between the center of the first port and the center of the first surface.

3. The substrate according to claim 2, characterized in that A ratio of the first spacing to the minimum width of the first flow channel is greater than or equal to 0.5 and less than or equal to 1.

5.

4. The substrate according to any one of claims 1 to 3, characterized in that: The substrate further includes a flow-disturbing structure, and the flow-disturbing structure is fixed inside the first flow channel.

5. The substrate according to claim 4, characterized in that The first flow channel has a first flow channel surface and a second flow channel surface opposite to each other. The first flow channel surface is farther away from the first surface than the second flow channel surface. The spoiler structure is fixed to the first flow channel surface.

6. The substrate according to claim 4, characterized in that The spoiler structure includes a spoiler plate, a spoiler platform or a spoiler tooth.

7. The substrate according to claim 1, characterized in that The minimum curvature radius of the first sub-flow channel and the second sub-flow channel is greater than or equal to 14 mm.

8. The substrate according to claim 1, characterized in that There are multiple through holes, and the multiple through holes are staggeredly arranged on both sides of a portion of the first flow channel.

9. A chuck, characterized in that: It comprises a cover plate, glue and the substrate according to any one of claims 1 to 8, wherein the cover plate is fixed to a side of the substrate away from the first surface by the glue.

10. An etching machine, characterized in that: It comprises an interface plate, an air inlet flange and the chuck according to claim 9, wherein the air inlet flange is fixed to the first surface of the chuck through the interface plate.

11. The etching machine according to claim 10, characterized in that: A plurality of through holes are arranged on the first surface of the substrate of the chuck; the projections of the plurality of through holes on the first surface are all located within the projection range of the air inlet flange on the first surface.

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