Method for manufacturing substrate and substrate manufactured by same

Abstract

The present invention relates to a method for manufacturing a susceptor, and provides a method for manufacturing a susceptor and a susceptor manufactured by the method, in which a cap-type sleeve structure or a tubular structure is used in a bonding structure of a base material and an insulating plate, according to the present invention, an increase in pressure inside a gas flow path during a curing process can be withstood or prevented, thereby preventing a blocking phenomenon of a gas hole in a high-power susceptor or the like for a high aspect ratio contact (HARC) process, reducing contamination around the gas hole, and minimizing the generation of an arc.

Description

Technical Field

[0001] The present invention relates to a susceptor, and in particular to a method for manufacturing a susceptor capable of protecting cooling pores from being affected by an adhesive, and a susceptor manufactured by the method. Background Art

[0002] Typically, a semiconductor device or display device is manufactured by stacking multiple thin film layers including a dielectric layer and a metal layer on a glass substrate, a flexible substrate or a semiconductor wafer substrate, and then patterning them. These thin film layers are sequentially deposited on the substrate by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process. The CVD process includes a low pressure chemical vapor deposition (LPCVD) process, a plasma enhanced chemical vapor deposition (PECVD) process, an organic metal chemical vapor deposition (MOCVD) process, and the like.

[0003] In such a CVD apparatus and a PVD apparatus, a susceptor is provided, which supports a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc. and is used in a semiconductor process. The susceptor may have a chuck electrode installed in the CVD apparatus and the PVD apparatus and used to support the substrate, and a heating wire used to heat the substrate in a heat treatment process, etc. In addition, the susceptor has a high frequency (RF) electrode instead of the heating wire or further has a high frequency (RF) electrode, and is used to form plasma in an etching process, etc. of a thin film layer located on the substrate.

[0004] In this susceptor, the base substrate and the insulating plate bonded thereto have a prescribed cooling structure so that the substrate on the insulating plate is uniformly cooled using external cooling gas. Generally, a cooling structure is provided so that a cooling gas flow path provided in the base substrate communicates with air holes provided in the insulating plate. In the process of bonding such a base substrate and the insulating plate using a liquid adhesive, various attempts have been made to prevent the adhesive from penetrating into the air holes.

[0005] Figure 1 This is a diagram for explaining a conventional method of bonding a base substrate 20 and an insulating plate 13 of a base.

[0006] See also Figure 1In the conventional base manufacturing process, when a base substrate 20 having a gas flow path 21 and an insulating plate 13 having air holes 3 are bonded using a liquid adhesive 12, an insulating bushing 40 is inserted into the end of the gas flow path 21 and an adhesive film 50 is covered thereon to perform a bonding process to prevent the liquid adhesive 12 from penetrating into the gas flow path 21, and then an appropriate process is further added to connect with the air holes 3.

[0007] However, when the base substrate 20 and the insulating plate 13 are bonded after applying the adhesive film 50, thermal curing is performed. At this time, the adhesive film 50 bulges due to thermal expansion, and it is impossible to completely prevent the adhesive 12 from penetrating into the gas flow path 21. Therefore, this structure may cause poor gas supply and particle generation or arc generation due to contamination around the pores. In particular, this problem is particularly serious in high-power bases used in high-aspect ratio contact (HARC) processes. Summary of the invention

[0008] Technical issues to be solved

[0009] Therefore, the present invention is proposed to solve the above-mentioned problems. The purpose of the present invention is to provide a method for manufacturing a base and a base manufactured by the method. In the method, a cap-type sleeve structure or a tubular structure is used in the bonding structure of the base substrate and the insulating plate, so that it can withstand the increase in pressure inside the gas flow path during the curing process or prevent the increase in pressure, thereby preventing the blockage of pores in high-power bases used in high aspect ratio contact (HARC) processes, etc., and reducing pollution around the pores to minimize the generation of arcs.

[0010] Technical means for solving technical problems

[0011] First, the features of the present invention are summarized as follows. In order to achieve the above-mentioned purpose, a manufacturing method of a base according to one aspect of the present invention may include: an inserting step of inserting a cap-type bushing structure into a groove formed at the end of a gas flow path extending to a gas hole of an insulating plate; a forming step of forming an adhesive layer around the cap-type bushing structure using an adhesive; a bonding step of placing the base substrate on the adhesive layer and bonding it to the insulating plate so that the end of the gas flow path of the base substrate contacts the cap-type bushing structure; and a processing step of processing in such a way that a through hole is formed in the cap-type bushing structure on the lower side of the gas flow path of the base substrate.

[0012] Furthermore, a method for manufacturing a base according to another aspect of the present invention may include: an inserting step of inserting a tubular structure into a groove formed at an end of a gas flow path extending to an air hole of an insulating plate; a forming step of forming an adhesive layer using an adhesive so that its height is below the height of the end of the tubular structure; a bonding step of bonding a base substrate including an electrode layer to the bonding layer and bonding the tubular structure by inserting the tubular structure into the gas flow path of the base substrate; and a removing step of removing the tubular structure.

[0013] In the step of inserting the tubular structure, a sleeve structure having a through hole may be first inserted into the groove, and then the tubular structure may be inserted into the inner side of the sleeve structure.

[0014] The bushing structure may be made of the same material as the insulating plate, that is, made of ceramic material.

[0015] The bushing structure may have a height extending above an end of the groove of the insulating plate.

[0016] The tubular structure may be made of plastic material.

[0017] The diameter of the tubular structure is preferably equal to or smaller than the diameter of the groove at the end of the gas flow path, and the gas flow path extends to the air hole of the insulating plate.

[0018] The diameter of the tubular structure is preferably smaller than or equal to the diameter of the inner through hole of the sleeve structure.

[0019] Furthermore, a base according to another aspect of the present invention may include: a base substrate having a gas flow path for supplying cooling gas, an insulating plate fixed on the base substrate and having air holes, and a sleeve structure having through holes so that the gas flow path and the air holes are connected between the base substrate and the insulating plate; wherein the sleeve structure may include a screw cone formed on the inner wall of the through hole.

[0020] The corkscrew may be used in manufacturing processes to tighten screws on tubular structures to prevent adhesive penetration.

[0021] Effects of the Invention

[0022] According to the manufacturing method of the base of the present invention and the base manufactured by the method, a cap-type sleeve structure or a tubular structure is adopted in the bonding structure of the base substrate and the insulating plate, so that during the curing process, the pressure increase inside the gas flow path can be withstood or the pressure increase can be prevented, thereby preventing the blockage of pores in high-power bases used in high aspect ratio contact (High Aspect Ratio Contact, HARC) processes, etc., and reducing the pollution around the pores to minimize the generation of arcs. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 This is a diagram for explaining a conventional method of bonding a base substrate 20 and an insulating plate 13 of a base.

[0024] Figure 2 is a schematic cross-sectional view of a base according to an embodiment of the present invention.

[0025] Figure 3 yes Figure 2 An enlarged cross-sectional view of the AA portion.

[0026] Figures 4a to 4d It is a cross-sectional view of a pore portion for explaining each step of the manufacturing process of the susceptor according to an embodiment of the present invention.

[0027] Figure 5a to Figure 5c 1 is a cross-sectional view of a pore portion for explaining each process of a manufacturing process of a susceptor according to another embodiment of the present invention.

[0028] Figure 6 It is used to illustrate Figure 5a FIG. 1 is a diagram of another embodiment of a manufacturing process.

[0029] Description of Reference Numerals

[0030] 15: Cooling gas flow path

[0031] 30: Stoma

[0032] 200: Base material

[0033] 300: Insulation board

[0034] 312: Adhesive

[0035] 410: Cap-type casing structure

[0036] 420: Sleeve structure with through hole

[0037] 520: Tubular structures DETAILED DESCRIPTION

[0038] Hereinafter, the present invention will be described in detail with reference to the accompanying drawings. At this time, the same components in each drawing are represented by the same figure marks as much as possible. In addition, the description of known functions and / or structures will be omitted. The content disclosed below will mainly describe the parts required for understanding the operation of various embodiments, and omit the description of elements that may make the main points of the description unclear. In addition, some of the components in the drawings may be enlarged, omitted or schematically illustrated. The size of each component cannot fully reflect the actual size, and therefore, the content recorded here is not limited by the relative size or spacing of the components shown in each drawing.

[0039] When describing the embodiments of the present invention, if it is judged that the specific description of the known technology related to the present invention unnecessarily obscures the main idea of ​​the present invention, its detailed description will be omitted. In addition, the terms described below are terms defined in consideration of the functions of the present invention, and may vary according to the intentions or precedents of the user or operator. Therefore, their definition should be based on the content of the entire specification. The terms used in this specification are used only to illustrate the embodiments of the present invention and are not intended to be limited. Unless otherwise specified, the form of a single quantity shall include the form of multiple quantities. Expressions such as "including" or "having" in this specification are used to refer to any feature, number, step, action, component or combination thereof, and should not be understood as excluding the existence or additional possibility of one or more other features, numbers, steps, actions, components or combinations thereof.

[0040] In addition, although the terms "first", "second" and the like may be used to describe various components, the components are not limited to the terms. The terms are only used to distinguish one component from another component.

[0041] First, in the present invention, the base serves as a semiconductor device for processing a plurality of processing target substrates such as semiconductor wafers, glass substrates, flexible substrates, etc. It may have an electrostatic chuck electrode used as an electrostatic chuck in order to support the processing target substrate, and may also have a heating wire (or heating element) for a heater in order to heat the processing target substrate to a specified temperature, or may further have a high-frequency electrode or may replace the heating wire in order to perform a process such as plasma enhanced chemical vapor deposition on the processing target substrate.

[0042] Therefore, it is stated in advance that, as described below, the base of the present invention serves as a structure that bonds a base substrate including a gas flow path and an insulating plate including an electrode layer, and the electrode layer arranged on the insulating plate includes a conductor for realizing any one or more functions of the electrostatic suction cup electrode, high-frequency electrode or heating wire (or heating element) as described above.

[0043] Figure 2is a schematic cross-sectional view of a susceptor 100 according to an embodiment of the present invention.

[0044] Reference Figure 2 According to an embodiment of the present invention, the base 100 includes a base substrate 200 and an insulating plate 300 bonded together by an adhesive 312. The base 100 is preferably circular, but in some cases, it can also be designed as other shapes such as an ellipse, a quadrilateral, etc.

[0045] The base substrate 200 may be formed of a multi-layer structure including a plurality of metal layers. These metal layers may be bonded by a brazing process, a welding process, a bonding process, or the like. The insulating plate 300 is fixed to the base substrate 200, and it may be fixed to the base substrate 200 by using a prescribed fixing means or an adhesive / bonding means. The base substrate 200 and the insulating plate 300 may be bonded after being manufactured separately, and depending on the circumstances, the structure of the insulating plate 300 may also be formed directly on the upper surface of the base substrate 200 using a ceramic sheet or the like.

[0046] like Figure 2 As shown, the insulating plate 300 includes an electrode layer 320 located between ceramic materials, and the ceramic material is composed of ceramic sheets or powders. As an embodiment, the ceramic material can be made of a substance selected from materials such as aluminum oxide (Al2O3), aluminum nitride (AlN), silicon carbide (SiC), silicon nitride (Si3N4), silicon dioxide (SiO2), barium oxide (BaO), zinc oxide (ZnO), cobalt oxide (CoO), tin oxide (SnO2), zirconium oxide (ZrO2), Y2O3, YAG, YAM, YAP, etc. The insulating plate 300 can be formed on the upper surface of the base substrate 200 by thermal spraying, bonding processes of ceramic sheets, etc. using the ceramic material as described above.

[0047] The electrode layer 320 may be made of a conductive metal material. As an example, the electrode layer 320 may be formed of at least one of silver (Ag), gold (Au), nickel (Ni), tungsten (W), molybdenum (Mo) and titanium (Ti), and more preferably, may be formed of tungsten (W). The electrode layer 320 may be formed using a thermal spraying process or a screen printing process. The electrode layer 320 has a thickness of about 1.0 μm to 100 μm. For example, preferably, when the electrode layer 320 is formed by a screen printing process, a thickness of 1.0 to 30 μm may be applied, and when the electrode layer 320 is formed by a thermal spraying process, a thickness of 30 to 100 μm may be applied. However, since it is difficult to form a too thin layer such as the electrode layer 320 having a thickness less than 1.0 μm, it is not preferred. In addition, at this time, the resistance value increases due to the porosity and other defects in the electrode layer, and the phenomenon that the electrostatic adsorption force decreases as the resistance value increases may occur, so it is not preferred. In addition, when the thickness of the electrode layer 320 is too thick, such as exceeding 100 μm, arcing may occur, so it is not preferred. Therefore, the thickness of the electrode layer 320 is preferably an appropriate value in the range of about 1.0 μm to 100 μm. The electrode layer 320 formed in this way can be, as an example, an electrostatic chuck electrode that can generate an electrostatic force and chucking by receiving a bias when a substrate (not shown) placed on the upper part of the dielectric layer 330 is loaded, and when the substrate (not shown) is unloaded, it can be an electrostatic chuck electrode that can perform de-chucking by applying a reverse bias to the electrode layer 320 to cause discharge.

[0048] However, it is not limited to this, and depending on the situation, the electrode layer 320 may further include an electrode pattern for a heater or a high-frequency electrode pattern for generating plasma. In other words, the base 100 of the present invention, as a semiconductor device for processing a processing target substrate for various purposes such as a semiconductor wafer, a glass substrate, a flexible substrate, etc., may have an electrostatic chuck electrode on the electrode layer 320 used as an electrostatic chuck in order to support the processing target substrate, and a heating wire (or heating element) in order to heat the processing target substrate to a specified temperature, or further have a high-frequency electrode or may replace the heating wire in order to perform a process such as plasma enhanced chemical vapor deposition on the processing target substrate.

[0049] When the susceptor 100 is installed in a chamber for semiconductor processing, in order to uniformly cool a substrate (e.g., a glass substrate, a flexible substrate, a semiconductor wafer substrate, etc.) on the insulating plate 300 using an external cooling gas, the base substrate 200 and the insulating plate 300 may be as follows: Figure 3 The air hole 30 is shown with a defined cooling structure around it.

[0050] Figure 3 yes Figure 2The enlarged cross-sectional view of the AA portion of FIG. 2 is an inverted vertical view. As described below, the base substrate 200 is placed on the insulating plate 300 and is inverted vertically to match the process of bonding.

[0051] Reference Figure 3 , for example, to supply cooling gas, such as Figure 2 As shown, the base substrate 200 has a cooling gas flow path 15 in an appropriate pattern inside, and the permeation prevention sleeve structure 400 (see Figure 4c Cap-type casing structure 410 or Figure 5c The through hole of the cooling gas flow path 15 and the cooling air hole 30 of the insulating plate 300 are fluidically connected, so that the cooling gas can be ejected from the cooling gas hole 30, thereby uniformly cooling the substrate on the insulating plate 300. The cooling gas at this time can mainly use helium (He), but is not necessarily limited to this, and a variety of suitable gases can be used. The cooling air holes 30 of the insulating plate 300 can be formed in an appropriate number according to the design.

[0052] exist Figure 2 In the embodiment, a bias voltage such as chucking and de-chucking or heating or providing a high frequency may be applied to the electrode layer 320 from a prescribed electrode rod 281 provided through a hole 280 at the lower portion of the base 100. According to the design, an appropriate number of cooling air holes 30 may be formed between prescribed electrode patterns forming the electrode layer 320, and the cooling air holes 30 may be formed to achieve fluid communication from the cooling gas flow path 15 to the upper surface of the insulating plate 300 through the sleeve structure 400 portion.

[0053] Figures 4a to 4d 1 is a cross-sectional view of a pore portion for explaining each step of the manufacturing process of the susceptor 100 according to an embodiment of the present invention.

[0054] Reference Figure 4a In one embodiment of the present invention, in order to manufacture the base 100 having the cooling air hole 30, first, an insulating plate 300 is prepared in which a groove 290 is pre-formed, and the groove 290 is formed at the end of the gas flow path 15, and the gas flow path extends to the air hole 30 of the insulating plate 300 for supplying cooling gas. At this time, preferably, the insulating plate 300 has the air hole 30 pre-processed at the necessary position and the gas flow path extending from the air hole 30 to the groove 290. For the processing of such air hole 30 and gas flow path, laser processing of a machining center (MCT) or the like can be used, and the hole can be processed into a diameter of 1 mm or less or several mm or less.

[0055] Hereinafter, the manufacturing process of the base 100 can be implemented on a prescribed workbench, but will not be described in detail, and in order to prevent the air holes 30 from being contaminated when the insulating plate 300 is placed on the workbench, the lower side of the insulating plate 300 in the drawings is preferably protected by an adhesive film.

[0056] A cap-type bushing structure 410 is inserted into the groove 290 of the insulating plate 300, and the cap-type bushing structure 410 is closed at the top and opened at the bottom to the air hole 30 in the drawing. Preferably, the cap-type bushing structure 410 is manufactured to have a height higher than the height extending above the end of the groove 290 of the insulating plate 300, and is inserted into the groove 290. The cap-type bushing structure 410 can be made of a heat-resistant, wear-resistant insulator, metal, or ceramic material, and preferably, can be the same material as the ceramic material of the insulating plate 300 as described above.

[0057] And, refer to Figure 4b After the cap-type bushing structure 410 is inserted into the groove 290 of the insulating plate 300, a liquid adhesive 312 such as silicone paste is used to form an adhesive layer around the cap-type bushing structure 410 (i.e., the side and the top thereof). At this time, when the adhesive 312 is applied to the cap-type bushing structure 410, the adhesive 312 removal process can also be performed by a flattening process so that the adhesive 312 remains only below the height of the cap-type bushing structure 410. The adhesive 312 is preferably made of a dielectric strength of 25 kV / mm or more and a volume resistivity of 10 15 It is made of materials with a resistance of Ωcm or above to help prevent arcing.

[0058] Next, refer to Figure 4c After forming an adhesive layer around the cap bushing structure 410 using the adhesive 312, the base substrate 200 is placed on the adhesive layer formed by the adhesive 312. At this time, the base substrate 200 is placed on the adhesive layer of the adhesive 312 and bonded to the insulating plate 300 so that the end of the gas flow path 15 of the base substrate 200 is in contact with the cap bushing structure 410 (preferably so that the center coincides). When the cap bushing structure 410 is placed in multiple positions, each cap bushing structure 410 and each gas flow path 15 of the corresponding base substrate 200 are in contact with each other and bonded to the insulating plate 300. When bonding, after the base substrate 200 is set in the manner described above, the base substrate 200 and the insulating plate 300 are pressed and thermally cured, thereby firmly bonding the base substrate 200 and the insulating plate 300. At this time, by pressing, the adhesive 312 on the cap bushing structure 410 is pressed and thinned as if it does not substantially exist.

[0059] Next, refer to Figure 4dThe cap-type sleeve structure 410 on the lower side of the gas flow path 15 of the base substrate 200 is processed to form a through hole 411. For example, the through hole 411 can be processed by a machining center (MCT) laser processing, etc., so that it can be processed into a hole with a diameter of less than several mm, or preferably, it can be processed into a hole with a diameter of less than 1 mm. In this way, the gas flow path 15 of the base substrate 200 and the pores 30 of the insulating plate 300 can be fluidically connected.

[0060] In the present invention, after the base substrate 200 is bonded to the cap-type sleeve structure 410 in the above-mentioned manner, the cap-type sleeve structure 410 is used by processing the through hole 411, so that during the pressing and heat curing process, the fluid connection with the pores 30 can be prevented from being blocked by preventing the adhesive 312 from penetrating into the gas flow path 15. In addition, since the structure is not covered with the adhesive film 50, it can fully withstand the increase in pressure inside the gas flow path without bulging, thereby preventing the pores 30 from being blocked.

[0061] Figure 5a to Figure 5c 1 is a cross-sectional view of a pore portion for explaining each process of a manufacturing process of a susceptor 100 according to another embodiment of the present invention.

[0062] Reference Figure 5a In one embodiment of the present invention, in order to manufacture the base 100 having the cooling air hole 30, first, an insulating plate 300 having a groove 290 formed in advance is prepared, wherein the groove 290 is formed at the end of the gas flow path 15, and the gas flow path extends to the air hole 30 of the insulating plate 300 for supplying cooling gas. At this time, preferably, the insulating plate 300 has the air hole 30 pre-processed at a necessary position. For the processing of such an air hole 30, laser processing by a machining center (MCT) or the like can be used, and the hole can be processed into a hole with a diameter of less than 1 mm or less than several mm.

[0063] Hereinafter, similarly, the manufacturing process of the base 100 can be implemented on a specified workbench, but it will not be described in detail, and in order to prevent contamination of the pores 30 when the insulating plate 300 is placed on the workbench, the lower side of the insulating plate 300 in the accompanying drawings is preferably protected by an adhesive film.

[0064] A sleeve structure 420 having through holes opened at the top and bottom to the air hole 30 is inserted into the groove 290 of the insulating plate 300, and a tubular structure 520 is further inserted inside the sleeve structure 420. Preferably, the sleeve structure 420 having the through hole is manufactured to have a height higher than the height extending above the end of the groove 290 of the insulating plate 300, and is inserted into the groove 290. However, the sleeve structure 420 is not absolutely necessary and may be omitted. In other words, the tubular structure 520 may be directly inserted into the groove 290 of the insulating plate 300.

[0065] Although it is not necessary to provide a screw tap (female thread) inside the groove 290 of the insulating plate 300, a screw tap (female thread) may be provided inside the groove 290 of the insulating plate 300 if necessary. Figure 6 In the embodiment, a screw tap (female thread) structure can be formed on the inner side of the groove 290 of the insulating plate 300. At this time, the screw tap on the inner side of the groove 290 of the insulating plate 300 is fastened with the screw tap (male thread) of the sleeve structure 420 or the tubular structure 520 inserted therein by screw fastening.

[0066] When the sleeve structure 420 is inserted into the groove 290 of the insulating plate 300, it can be fixed by using a silicone adhesive or the like. In other words, when the tubular structure 520 is directly inserted into the groove 290 of the insulating plate 300 without using the sleeve structure 420, if there is no corkscrew formed inside the groove 290, the tubular structure 520 with or without a corkscrew can also be directly fixed in the groove 290 of the insulating plate 300 by using a silicone adhesive or the like. Alternatively, if there is a corkscrew formed inside the groove 290, the corkscrew formed inside the groove 290 can be screw-fastened with the corkscrew (male thread) of the tubular structure 520.

[0067] Furthermore, when the sleeve structure 420 is used, if there is no corkscrew formed inside the groove 290, the sleeve structure 420 with or without a corkscrew (male thread) can be directly fixed in the groove 290 of the insulating plate 300 using a silicone adhesive or the like. Figure 6 ), can be screwed and fastened with the corkscrew (male thread) of the sleeve structure 420. In this way, after the sleeve structure 420 is inserted into the groove 290, the tubular structure 520 is further inserted into the inner side (inner wall) of the sleeve structure 420. At this time, it is preferred to use the corkscrew (female thread) formed on the inner side of the sleeve structure 420 to screw and fasten with the corkscrew (male thread) of the tubular structure 520.

[0068] The tubular structure 520 may be made of a flexible material. When the tubular structure 520 is directly inserted into the groove 290 of the insulating plate 300, the diameter of the tubular structure 520 is preferably less than or equal to the diameter of the groove 290 of the insulating plate 300. Furthermore, when the sleeve structure 420 is used, the diameter of the tubular structure 520 is preferably less than or equal to the diameter of the through hole of the sleeve structure 420. Thus, in the subsequent process, the liquid adhesive 312 can be prevented from penetrating between the sleeve structure 420 and the tubular structure 520.

[0069] Furthermore, the tubular structure 520 is manufactured to have a height higher than the height extending above the end of the sleeve structure 420 in the figure, and is inserted into the sleeve structure 420. For example, the height of the tubular structure 520 may be more than 5 times the height of the sleeve structure 420. For example, when the height of the sleeve structure 420 is 5 mm, the height of the tubular structure 520 may be 40±10 mm. In a predetermined jig, such tubular structures 520 may be prepared in advance in a number corresponding to the plurality of grooves 290, so that the tubular structure 520 can be inserted into the corresponding position.

[0070] The sleeve structure 420 can be made of heat-resistant, wear-resistant insulator, metal or ceramic material, etc., preferably, it can be the same material as the ceramic material of the insulation plate 300 as described above. The tubular structure 520 can be made of a variety of materials such as a heat-resistant flexible insulating material, for example, a flexible plastic material (such as engineering plastics such as polyetherimide (ULTEM)). The tubular structure 520 formed of engineering plastics can have heat resistance so as not to deform in shape under a temperature condition of 170°C or above, and not to deform in shape at the above-mentioned thermal curing temperature (such as below 150°C).

[0071] And, refer to Figure 5b After inserting only the tubular structure 520 or inserting the sleeve structure 420 and the tubular structure 520 into the groove 290 of the insulating plate 300, a liquid adhesive 312 such as silicone paste is used to form an adhesive layer, wherein the thickness of the adhesive layer is less than the height of the sleeve structure 420 (in the case of using the sleeve structure 420), and the adhesive layer is formed with a thickness less than the height of the uppermost end of the tubular structure 520 using the adhesive 312. The adhesive 312 is preferably made of a dielectric strength of 25 kV / mm or more and a volume resistivity of 10 15 It is made of materials with a resistance of Ωcm or above to help prevent arcing.

[0072] Next, the base substrate 200 is placed on the adhesive layer formed by the adhesive 312, and the tubular structure 520 is inserted into the gas flow path 15 of the base substrate 200 so that the multiple upper ends of the sleeve structure 420 are located in the multiple grooves 190 at the lower end of the gas flow path 15, thereby preparing for bonding. At this time, preferably, the height of the uppermost end of the tubular structure 520 is designed to be able to rise above the upper end surface of the base substrate 200. Figure 5a and Figure 6 If the sleeve structure 420 is not used, the plurality of grooves 190 at the lower end of the gas flow path 15 may not be formed.

[0073] Then, refer to Figure 5c , the base substrate 200 and the insulating plate 300 are pressed and heat cured, thereby firmly bonding the base substrate 200 and the insulating plate 300. After the base substrate 200 and the insulating plate 300 are firmly bonded, the tubular structure 520 is removed. The tubular structure 520 is removed as follows: the groove 290 of the insulating plate 300 or the sleeve structure 420 is separated and removed by rotating it in the opposite direction to the screw tightening direction of the sleeve structure 420. Figure 5a and Figure 6 In the embodiment, even if the sleeve structure 420 is not used, when removing the tubular structure 520 , the tubular structure 520 can be separated from the adhesive 312 by applying an appropriate torsional force, etc., thereby removing the tubular structure 520 .

[0074] In this way, by using the tubular structure 520, or by using the sleeve structure 420 and the tubular structure 520, during the pressing and heat curing process, the adhesive 312 is prevented from penetrating into the gas flow path 15, thereby preventing the fluid connection with the pores 30 from being blocked. In addition, instead of a conventional structure covered with an adhesive film, the air is connected through the tubular structure 520 which is higher than the sleeve structure 420, thereby preventing an increase in pressure inside the gas flow path, thereby enabling the pressing and heat curing to be performed stably.

[0075] So, according to Figure 5a to Figure 5c and Figure 6 The shape of the base 100 of the present invention is as follows: Figure 2 The illustrated case where the susceptor 100 is installed inside a chamber for a semiconductor process is used as a reference, and the insulating plate 300 is placed on the base substrate 200 .

[0076] At this time, the base 100 of the present invention includes: a base substrate 200 having a gas flow path 15 for supplying cooling gas; an insulating plate 300 fixed on the base substrate 200 and having air holes 30; and a sleeve structure 420 having a through hole so that the gas flow path 15 and the air holes 30 are connected between the base substrate 200 and the insulating plate 300. As described above, preferably, a screw tap is formed on the inner wall of the through hole of the sleeve structure 420. The purpose of the screw tap on the inner wall of the through hole of the sleeve structure 420 can be to tighten with a tubular structure 520 for preventing adhesive penetration in the manufacturing process as described above. In addition, the outer side (outer wall) of the sleeve structure 420 and the inner side (inner wall) of the groove 290 of the insulating plate 300 can also be formed with a screw tap, etc., and the above-mentioned embodiment is also applicable to this.

[0077] As described above, according to the manufacturing method of the base 100 of the present invention, by adopting a cap-type sleeve structure 410 or a tubular structure 520 inserted into the sleeve structure 410 in the bonding structure of the base substrate 200 and the insulating plate 300, it is possible to withstand the increase in pressure inside the gas flow path or prevent the increase in pressure during the curing process, thereby preventing the blockage of pores in a high-power base for a high aspect ratio contact (HARC) process, etc., and reducing contamination around the pores to minimize the generation of arcs.

[0078] As described above, in the present invention, specific matters such as specific constituent elements and limited embodiments and drawings have been described, but this is only provided to help understand the present invention as a whole, and the present invention is not limited to the embodiments, and ordinary technicians in the field to which the present invention belongs can make various modifications and changes within the scope of the essential features of the present invention. Therefore, the spirit of the present invention should not be limited to the described embodiments and determined, and all technical ideas that are equivalent to or equivalent to the claims, except for the attached claims, should be interpreted as included in the scope of the present invention.

Claims

1. A method for manufacturing a base, in, The following steps are involved: an inserting step of inserting a cap-type sleeve structure into a groove formed at an end of a gas flow path extending toward the air hole of the insulating plate; forming a bonding layer on the insulating plate using an adhesive, and forming the bonding layer in such a manner that the adhesive is applied to at least the side surface of the cap-type bushing structure; a bonding step of placing a base substrate on the bonding layer and bonding it to the insulating plate so that an end of the gas flow path of the base substrate contacts the cap-type bushing structure; and The processing step is performed so as to form a through hole in the cap-type sleeve structure on the lower side of the gas flow path of the base substrate.

2. The method for manufacturing a base according to claim 1, wherein: The bushing structure is made of the same material as the insulating plate, that is, ceramic material.

3. The method for manufacturing a susceptor according to claim 1, wherein: The bushing structure has a height extending above an end of the groove of the insulating plate.

4. A base, in, include: A base substrate having a gas flow path for supplying a cooling gas; an insulating plate fixed on the base substrate and having pores; and The sleeve structure has a through hole so that the gas flow path and the air hole are connected between the base substrate and the insulating plate. Wherein, the sleeve structure may include a thread formed on the inner wall of the through hole.

5. The base according to claim 4, wherein: The thread is used in the manufacturing process to achieve thread fastening with a tubular structure for preventing adhesive penetration.

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