Gallium nitride-based semiconductor laser element with carrier concentration matching layer

Abstract

The invention relates to the technical field of semiconductor photoelectric devices, and particularly discloses a gallium nitride-based semiconductor laser element with a carrier concentration matching layer. The gallium nitride-based semiconductor laser element with the carrier concentration matching layer sequentially comprises a substrate, a lower coating layer, a lower waveguide layer, an active layer, an upper waveguide layer and an upper coating layer from bottom to top, and the carrier concentration matching layer is arranged between the upper waveguide layer and the upper coating layer; according to the gallium nitride-based semiconductor laser element with the carrier concentration matching layer, by regulating and controlling the peak electron drift rate interface steep degree and the transverse sound velocity interface steep degree of the interface between the carrier concentration matching layer and the active layer and the interface between the carrier concentration matching layer and the upper coating layer, the valence band order of the laser is reduced, and the hole injection efficiency and the hole transport efficiency are improved; and the carrier injection uniformity and the laser gain uniformity are improved, so that the slope efficiency, the optical power and the photoelectric conversion efficiency of the laser are improved, the power consumption is reduced, and the service life is prolonged.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor optoelectronic devices, and in particular relates to a gallium nitride-based semiconductor laser element with a carrier concentration matching layer. Background Art

[0002] Lasers are widely used in laser display, laser TV, laser projector, communication, medical treatment, weapons, guidance, ranging, spectral analysis, cutting, precision welding, high-density optical storage and other fields. There are many types of lasers, and the classification methods are also diverse. There are mainly solid, gas, liquid, semiconductor and dye lasers. Compared with other types of lasers, all-solid-state semiconductor lasers have the advantages of small size, high efficiency, light weight, good stability, long life, simple and compact structure, and miniaturization. There are big differences between lasers and nitride semiconductor light-emitting diodes. 1) Lasers are generated by stimulated radiation of carriers, with a small half-width of the spectrum and high brightness. The output power of a single laser can be in the W level, while nitride semiconductor light-emitting diodes are spontaneous radiation, and the output power of a single light-emitting diode is in the mW level; 2) The current density of the laser reaches KA / cm2, which is more than 2 orders of magnitude higher than that of nitride light-emitting diodes, resulting in stronger electron leakage, more serious Auger recombination, stronger polarization effect, more serious electron-hole mismatch, and more serious efficiency attenuation Droop effect; 3) Light-emitting diodes The tube spontaneously radiates, without any external influence, and it is incoherent light that transitions from high energy level to low energy level, while the laser is stimulated transition radiation, and the energy of the induced photon should be equal to the difference in energy levels of the electron transition, producing photons and induced photons that are completely coherent light; 4) Different principles: Under the action of external voltage, the light-emitting diode produces radiation recombination and luminescence when electron holes transition to the quantum well or pn junction, while the laser needs the lasing conditions to be met before it can be lased. The carrier inversion distribution in the active area must be met, and the stimulated radiation light oscillates back and forth in the resonant cavity. The propagation in the gain medium amplifies the light, meets the threshold condition so that the gain is greater than the loss, and finally outputs the laser.

[0003] Nitride semiconductor lasers have the following problems: the absorption loss of impurities in the optical waveguide of the violet laser is high, which causes the internal optical loss to increase, resulting in a decrease in the slope efficiency of the laser and an increase in the threshold current. The electron-hole asymmetry in the quantum well is seriously mismatched, electron leakage and carrier delocalization make it more difficult for holes to transport in the quantum well, carrier injection is uneven, and gain is uneven, which makes the laser gain spectrum wider and the peak gain decrease, resulting in an increase in the laser threshold current. There are non-radiative recombination losses and free carrier absorption in the active area of ​​the violet laser, which generate a lot of heat. If the laser has low thermal conductivity, poor heat dissipation, and poor temperature characteristics, it will aggravate the thermal mismatch between the semiconductor epitaxial layers, leading to problems such as an increase in threshold current, a decrease in output optical power and slope efficiency, and an increase in device power consumption. It may also cause the performance of the laser to fluctuate or become unstable during long-term operation, affecting its reliability and service life. Summary of the invention

[0004] The purpose of the present invention is to provide a gallium nitride-based semiconductor laser element with a simple structure and reasonable design and a carrier concentration matching layer in order to solve the above problems.

[0005] The present invention achieves the above-mentioned purpose through the following technical solutions:

[0006] A gallium nitride-based semiconductor laser element with a carrier concentration matching layer, comprising, from bottom to top, a substrate, a lower cladding layer, a lower wave layer, an active layer, an upper waveguide layer, and an upper cladding layer, wherein a carrier concentration matching layer is provided between the upper waveguide layer and the upper cladding layer;

[0007] The rising angle of the valley position of the hole mobility of the carrier concentration matching layer toward the active layer is α, the falling angle of the peak position of the heavy hole effective mass of the carrier concentration matching layer toward the active layer is β, the rising angle of the valley position of the peak electron drift velocity of the carrier concentration matching layer toward the active layer is γ, and the falling angle of the peak position of the transverse sound velocity of the carrier concentration matching layer toward the active layer is θ, wherein: 20°≤θ≤γ≤β≤α≤90°;

[0008] Among them, the rising angle of the valley position of the hole mobility of the carrier concentration matching layer toward the p-type semiconductor direction is δ, the decreasing angle of the peak position of the heavy hole effective mass of the carrier concentration matching layer toward the p-type semiconductor direction is σ, the rising angle of the valley position of the peak electron drift velocity of the carrier concentration matching layer toward the p-type semiconductor direction is φ, and the decreasing angle of the peak position of the transverse sound velocity of the carrier concentration matching layer toward the p-type semiconductor direction is ψ, wherein: 10°≤ψ≤φ≤σ≤δ≤90°.

[0009] Furthermore, the rising angle of the hole mobility and the valley position of the peak electron drift velocity of the carrier concentration matching layer toward the active layer, the descending angle of the heavy hole effective mass and the peak position of the transverse sound velocity of the carrier concentration matching layer toward the active layer, the rising angle of the hole mobility and the valley position of the peak electron drift velocity of the carrier concentration matching layer toward the p-type semiconductor, and the descending angle of the heavy hole effective mass and the peak position of the transverse sound velocity of the carrier concentration matching layer toward the p-type semiconductor have the following relationship: 10°≤ψ≤φ≤σ≤δ≤θ≤γ≤β≤α≤90°.

[0010] Furthermore, the hole mobility distribution and the peak electron drift velocity distribution of the carrier concentration matching layer both have the function y=sinx / e x Curved distribution.

[0011] Furthermore, the heavy hole effective mass distribution and the transverse sound velocity distribution of the carrier concentration matching layer both have a function y=e x sinx curve distribution.

[0012] Furthermore, the carrier concentration matching layer is any one or any combination of AlGaN, AlInGaN, AlN, GaN, AlInN, and InGaN.

[0013] Furthermore, the active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination thereof, with a thickness of 10 to 150 angstroms, and the barrier layers are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O3 , BN, diamond or any combination thereof, with a thickness of 10 to 200 angstroms.

[0014] Further, the lower cladding layer, the upper waveguide layer, the lower waveguide layer, and the upper cladding layer are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination.

[0015] Furthermore, the substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 Composite substrates, Mo, TiW, CuW, Cu, sapphire / Al N composite substrates, diamond, graphene, sapphire / SiN x , Sapphire / SiO 2 / SiN x Composite substrate, sapphire / SiN x / SiO 2 Composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0016] The beneficial effects of the present invention are as follows: the present invention provides a carrier concentration matching layer between the upper waveguide layer and the upper cladding layer, and regulates the steepness of the hole mobility interface and the heavy hole effective mass interface at the interface between the carrier concentration matching layer and the active layer and the upper cladding layer, thereby improving the conduction band order, reducing electron leakage and carrier delocalization, and improving the concentration matching and symmetry of electron and hole carriers in the active layer. At the same time, the peak electron drift velocity interface steepness and the transverse sound velocity interface steepness at the interface between the carrier concentration matching layer and the active layer and the upper cladding layer are regulated to reduce the valence band order of the laser, improve the hole injection efficiency and the hole transport efficiency, and improve the carrier injection uniformity and the laser gain uniformity, thereby improving the slope efficiency, optical power and photoelectric conversion efficiency of the laser, reducing power consumption and extending the service life. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a schematic structural diagram of a gallium nitride-based semiconductor laser element with a carrier concentration matching layer according to an embodiment of the present invention;

[0018] Figure 2 It is a SIMS secondary ion mass spectrum of a gallium nitride-based semiconductor laser element with a carrier concentration matching layer according to an embodiment of the present invention;

[0019] Figure 3 This is a TEM lens electron microscope image of a gallium nitride-based semiconductor laser element with a carrier concentration matching layer according to an embodiment of the present invention;

[0020] Figure 4 This is a TEM lens electron microscope image of a gallium nitride-based semiconductor laser element with a carrier concentration matching layer according to an embodiment of the present invention (a local enlarged image of the carrier concentration matching layer);

[0021] Figure 5 This is a TEM lens electron microscope image of a gallium nitride-based semiconductor laser element with a carrier concentration matching layer according to an embodiment of the present invention (partially enlarged image of the upper waveguide layer);

[0022] Figure 6 This is a TEM lens electron microscope image (partial magnified image of the active layer) of a gallium nitride-based semiconductor laser element with a carrier concentration matching layer according to an embodiment of the present invention;

[0023] Figure 7 This is a TEM lens electron microscope image of a gallium nitride-based semiconductor laser element with a carrier concentration matching layer according to an embodiment of the present invention (a local enlarged image of the lower waveguide layer).

[0024] In the figure: 100, substrate; 101, lower cladding layer; 102, lower waveguide layer; 103, active layer; 104, upper waveguide layer; 105, upper cladding layer; 106, carrier concentration matching layer. DETAILED DESCRIPTION

[0025] The present application is further described in detail below in conjunction with the accompanying drawings. It is necessary to point out here that the following specific implementation methods are only used to further illustrate the present application and cannot be understood as limiting the scope of protection of the present application. Technical personnel in this field can make some non-essential improvements and adjustments to the present application based on the above application content.

[0026] like Figure 1-Figure 7 As shown, a gallium nitride-based semiconductor laser element with a carrier concentration matching layer 106 includes, from bottom to top, a substrate 100, a lower cladding layer 101, a lower waveguide layer 102, an active layer 103, an upper waveguide layer 104, and an upper cladding layer 105, wherein a carrier concentration matching layer 106 is provided between the upper waveguide layer 104 and the upper cladding layer 105;

[0027] In semiconductor devices, differences in carrier concentrations in different materials or structures may lead to reflection or scattering of electrons or holes at the interface. By introducing the carrier concentration matching layer 106, these differences can be balanced, carrier transport and injection can be optimized, and device efficiency and performance can be improved.

[0028] The rising angle of the valley position of the hole mobility of the carrier concentration matching layer 106 toward the active layer 103 is α, the falling angle of the peak position of the heavy hole effective mass of the carrier concentration matching layer 106 toward the active layer 103 is β, the rising angle of the valley position of the peak electron drift velocity of the carrier concentration matching layer 106 toward the active layer 103 is γ, and the falling angle of the peak position of the transverse sound velocity of the carrier concentration matching layer 106 toward the active layer 103 is θ, wherein: 20°≤θ≤γ≤β≤α≤90°;

[0029] Hole mobility is used to describe the movement speed of holes in a material under the action of an external electric field. Controlling the rising angle of the valley position of hole mobility toward the active layer 103 can ensure the effective transmission and response speed of holes in the device. By adjusting this angle, the performance of the device can be optimized and the working efficiency and stability of the device can be improved.

[0030] The heavy hole effective mass usually refers to the effective mass of holes in the energy valley of a specific energy band in semiconductor materials. In some semiconductor materials, due to the special properties of the energy band structure, the effective mass of holes in the energy valley can be many times greater than the effective mass of electrons, so they are called "heavy holes". The descending angle of the peak position of the heavy hole effective mass toward the active layer 103 refers to the inclination angle of the position of the maximum effective mass of heavy holes in the semiconductor material relative to the active layer 103. By adjusting this angle, the performance of the device can be optimized and the working efficiency and stability of the device can be improved;

[0031] The peak electron drift rate refers to the maximum drift rate that electrons reach under the action of an electric field in a semiconductor device. Controlling the rising angle of the valley position of the peak electron drift rate toward the active layer 103 can affect the performance and stability of the device. By adjusting this angle, the working efficiency, response speed and energy consumption of the device can be optimized.

[0032] Among them, the rising angle of the valley position of the hole mobility of the carrier concentration matching layer 106 toward the p-type semiconductor direction is δ, the decreasing angle of the peak position of the heavy hole effective mass of the carrier concentration matching layer 106 toward the p-type semiconductor direction is σ, the rising angle of the valley position of the peak electron drift velocity of the carrier concentration matching layer 106 toward the p-type semiconductor direction is φ, and the decreasing angle of the peak position of the transverse sound velocity of the carrier concentration matching layer 106 toward the p-type semiconductor direction is ψ, wherein: 10°≤ψ≤φ≤σ≤δ≤90°.

[0033] In a specific embodiment, the rising angle of the hole mobility and the valley position of the peak electron drift velocity of the carrier concentration matching layer 106 toward the active layer 103, the falling angle of the heavy hole effective mass and the peak position of the transverse sound velocity of the carrier concentration matching layer 106 toward the active layer 103, the rising angle of the hole mobility and the valley position of the peak electron drift velocity of the carrier concentration matching layer 106 toward the p-type semiconductor, and the falling angle of the heavy hole effective mass and the peak position of the transverse sound velocity of the carrier concentration matching layer 106 toward the p-type semiconductor have the following relationship: 10°≤ψ≤φ≤σ≤δ≤θ≤γ≤β≤α≤90°.

[0034] By controlling the angle, the change of parameters in the carrier concentration matching layer 106 can be optimized to achieve the best device performance. The control of different parameters changing with angle can affect key performance indicators such as carrier transmission and drift rate, thereby improving the overall performance of the device.

[0035] In a specific embodiment, the hole mobility distribution and the peak electron drift velocity distribution of the carrier concentration matching layer 106 both have the function y=sinx / e x Curved distribution.

[0036] In a specific embodiment, the heavy hole effective mass distribution and the transverse sound velocity distribution of the carrier concentration matching layer 106 both have a function y=e x sinx curve distribution.

[0037] In a specific implementation, the carrier concentration matching layer 106 is any one or any combination of AlGaN, AlInGaN, AlN, GaN, AlInN, and InGaN.

[0038] In a specific embodiment, the active layer 103 is a periodic structure composed of a well layer and a barrier layer, the period number is 3 ≥ m ≥ 1, and the well layer is GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination thereof, with a thickness of 10 to 150 angstroms, and a barrier layer of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond or any combination thereof, with a thickness of 10 to 200 angstroms.

[0039] In a specific embodiment, the lower cladding layer 101, the upper waveguide layer 104, the lower waveguide layer 102, and the upper cladding layer 105 are GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga 2 O 3 , BN, diamond, any one or any combination.

[0040] In a specific embodiment, the substrate 100 includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO 2 Composite substrates, Mo, TiW, CuW, Cu, sapphire / AlN composite substrates, diamond, graphene, sapphire / SiNx , Sapphire / SiO 2 / SiN x Composite substrate, sapphire / SiN x / SiO 2 Composite substrate, magnesium aluminum spinel MgAl 2 O 4 、MgO、ZnO、ZrB 2 、LiAlO 2 and LiGaO 2 Any type of composite substrate.

[0041] In order to highlight the technical advantages of the present technical solution, this embodiment compares the performance of the laser element proposed by the present invention with that of the traditional laser element. The comparison results can be seen in Table 1.

[0042] Table 1

[0043]

[0044] By comparison, it can be found that the slope efficiency of the gallium nitride-based semiconductor laser element with a carrier concentration matching layer proposed by the present invention is improved from 1.12 to 1.98, with a change range of 77%, compared with the traditional laser, indicating that the laser generates higher optical power under unit current input. This means that the laser is more efficient in converting electrical energy into optical energy and can use the input power more effectively; the threshold current density is increased from 2.4kA / cm 2 Reduced to 0.83kA / cm 2 , a change of 65%, extending the service life of the laser and improving the reliability of the laser; the optical power increased from 4.8W to 7.61W, a change of 59%. The increase in optical power is usually accompanied by an increase in laser efficiency, that is, when the input power remains unchanged, the output power is higher and the energy utilization is more efficient; the photoelectric conversion efficiency increased from 32.50% to 44.60%, a change of 37%. The increase in photoelectric conversion efficiency means that more light energy is converted into electrical energy, thereby improving the energy utilization efficiency, and is usually accompanied by an improvement in device performance, such as increasing output power, stability and reliability, making the device more effective and reliable in practical applications.

[0045] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A gallium nitride-based semiconductor laser element with a carrier concentration matching layer, comprising, from bottom to top, a substrate, a lower cladding layer, a lower waveguide layer, an active layer, an upper waveguide layer, and an upper cladding layer, characterized in that: A carrier concentration matching layer is provided between the upper waveguide layer and the upper cladding layer; The rising angle of the valley position of the hole mobility of the carrier concentration matching layer toward the active layer is α, the falling angle of the peak position of the heavy hole effective mass of the carrier concentration matching layer toward the active layer is β, the rising angle of the valley position of the peak electron drift velocity of the carrier concentration matching layer toward the active layer is γ, and the falling angle of the peak position of the transverse sound velocity of the carrier concentration matching layer toward the active layer is θ, wherein: 20°≤θ≤γ≤β≤α≤90°; The rising angle of the valley position of the hole mobility of the carrier concentration matching layer toward the p-type semiconductor is δ, the falling angle of the peak position of the heavy hole effective mass of the carrier concentration matching layer toward the p-type semiconductor is σ, the rising angle of the valley position of the peak electron drift velocity of the carrier concentration matching layer toward the p-type semiconductor is φ, and the falling angle of the peak position of the transverse sound velocity of the carrier concentration matching layer toward the p-type semiconductor is ψ, wherein: 10°≤ψ≤φ≤σ≤δ≤90°.

2. The gallium nitride-based semiconductor laser device with a carrier concentration matching layer according to claim 1, characterized in that: The rising angle of the hole mobility and the valley position of the peak electron drift velocity of the carrier concentration matching layer toward the active layer, and the descending angle of the heavy hole effective mass and the peak position of the transverse sound velocity of the carrier concentration matching layer toward the active layer, the rising angle of the hole mobility and the valley position of the peak electron drift velocity of the carrier concentration matching layer toward the p-type semiconductor, and the descending angle of the heavy hole effective mass and the peak position of the transverse sound velocity of the carrier concentration matching layer toward the p-type semiconductor have the following relationship: 10°≤ψ≤φ≤σ≤δ≤θ≤γ≤β≤α≤90°.

3. The gallium nitride-based semiconductor laser device with a carrier concentration matching layer according to claim 2, characterized in that: The hole mobility distribution and peak electron drift velocity distribution of the carrier concentration matching layer both have the function y=sinx / e x Curved distribution.

4. The gallium nitride-based semiconductor laser device with a carrier concentration matching layer according to claim 3, characterized in that: The heavy hole effective mass distribution and the transverse sound velocity distribution of the carrier concentration matching layer both have the function y=e x sinx curve distribution.

5. The gallium nitride-based semiconductor laser device with a carrier concentration matching layer according to claim 4, characterized in that: The carrier concentration matching layer is any one or any combination of AlGaN, AlInGaN, AlN, GaN, AlInN, and InGaN.

6. The gallium nitride-based semiconductor laser device with a carrier concentration matching layer according to claim 5, characterized in that: The active layer is a periodic structure composed of a well layer and a barrier layer, the number of periods is 3≥m≥1, and the well layer is any one or any of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond. combination, with a thickness of 10 to 150 angstroms, and the barrier layer is any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, AlInAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN, and diamond, with a thickness of 10 to 200 angstroms.

7. The gallium nitride-based semiconductor laser device with a carrier concentration matching layer according to claim 6, characterized in that: The lower cladding layer, upper waveguide layer, lower waveguide layer and upper cladding layer are any one or any combination of GaN, InGaN, InN, AlInN, AlGaN, AlInGaN, AlN, GaAs, GaP, InP, AlGaAs, AlInGaAs, AlGaInP, InGaAs, InGaAsN, Al InAs, AlInP, AlGaP, InGaP, GaSb, InSb, InAs, InAsSb, AlGaSb, AlSb, InGaSb, AlGaAsSb, InGaAsSb, SiC, Ga2O3, BN and diamond.

8. A gallium nitride-based semiconductor laser device with a carrier concentration matching layer according to any one of claims 1 to 7, characterized in that: The substrate includes sapphire, silicon, Ge, SiC, AlN, GaN, GaAs, InP, InAs, GaSb, sapphire / SiO2 composite substrate, Mo, TiW, CuW, Cu, sapphire / AlN composite substrate, diamond, graphene, sapphire / SiN x , Sapphire / SiO2 / SiN x Composite substrate, sapphire / SiN x Any one of a / SiO2 composite substrate, a magnesium aluminum spinel MgAl2O4, MgO, ZnO, ZrB2, LiAlO2 and LiGaO2 composite substrate.

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