Method for manufacturing thin film with improved thermal conductivity on surface of aluminum substrate through deposition method

Abstract

The invention discloses a method for manufacturing a thin film with improved thermal conductivity on the surface of an aluminum substrate through a deposition method. In the method, a direct-current magnetron reactive sputtering method is selected as the deposition method. A direct-current magnetron reactive sputtering method is adopted, and a layer of aluminum nitride film with high thermal conductivity is deposited by controlling parameters in the sputtering method. Through the rate influence factor and the surface morphology influence factor, the film generation rate is controlled, and the surface morphology is controlled. By detecting the thickness and the surface form of the aluminum nitride film, the aluminum substrate meeting the high-quality requirement is selected. The electrical property of the aluminum nitride film is monitored in a multi-source data fusion mode, and the direct-current magnetron reactive sputtering method is improved.

Description

Technical Field

[0001] The invention belongs to the field of aluminum substrate manufacturing, and in particular relates to a method for manufacturing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method. Background Art

[0002] The aluminum substrate includes a metal base layer, an insulating layer and a conductive layer. Although the metal base layer has good thermal conductivity, an insulating layer with relatively poor thermal conductivity is also arranged between the metal base layer and the conductive layer. In order to meet the increasingly high requirements for aluminum substrates, an aluminum substrate with improved overall thermal conductivity is needed.

[0003] Aluminum nitride has the characteristics of high thermal conductivity, high resistivity, strong breakdown field, small dielectric constant, and low thermal expansion coefficient. Aluminum nitride film has a series of unique and excellent physical and chemical properties and has broad application prospects in electricity, optics, acoustics, and mechanics.

[0004] Although the DC magnetron reactive sputtering method has been applied to the deposition of aluminum nitride thin films, the control method for deposition has not achieved selective control of rate and morphology, and has not been able to achieve the selection of high-quality plates from a whole piece of deposited plate. Summary of the invention

[0005] In view of the above background, an object of the present invention is to provide a method for producing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method, so as to solve the problems in the prior art.

[0006] The specific scheme of the present invention is as follows:

[0007] A method for producing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method, wherein the deposition method is a DC magnetron reactive sputtering method.

[0008] In the DC magnetron reactive sputtering method,

[0009] The target material is an aluminum plate with a purity of 99.999% and a thickness of 2.0 mm. The target wire is cut into a circle with a diameter of 100 mm.

[0010] The substrate is an aluminum plate with a purity of 99.999%. Its thickness and size are selected according to the production requirements. The surface of the substrate is polished to a mirror surface, then ultrasonically cleaned in an acetone solution for 10 minutes, and finally ultrasonically cleaned in an ethanol solution for 10 minutes. The substrate is taken out and blown dry to prepare an aluminum substrate for deposition.

[0011] Select argon Ar with a purity of 99.999% and nitrogen N2 with a purity of 99.999%. Before coating, shield the target with a baffle and pre-sputter the target with argon Ar for 15 minutes. Introduce argon Ar and nitrogen N2 into the sputtering chamber in a dynamic proportion using a gas flow meter, and pre-sputter for 30 minutes again. After the voltage and current are stable, remove the baffle and start sputtering. The sputtering time is 2 hours.

[0012] Further,

[0013] The dynamic ratio is between 3:2 and 4:3, and the flow rate of the argon gas Ar is 12.0-16.0 cm 3 / min, the flow rate of nitrogen N2 is 8.0-12.0cm 3 / min, sputtering gas pressure P a is 0.3-1.0Pa, the target-substrate distance d is 3-7cm, and the sputtering power p s The power is 100-200W, and the temperature T of the substrate is 50-300℃.

[0014] Further,

[0015] The method also includes a sputtering control method based on multi-source data fusion, wherein the sputtering control method based on the target-substrate distance d and the sputtering power p collected during sputtering s , substrate temperature T, sputtering gas pressure P a The rate influencing factor φ is fitted to the influence of the aluminum nitride film generation rate and film surface morphology v and surface morphology factor φ s ,

[0016]

[0017] Among them, λ1 is the scaling factor, k1 is the influence coefficient of the target-substrate distance d on the deposition rate, and k2 is the sputtering power p s The coefficient of influence on the deposition rate. The larger the rate influence factor is, the greater the influence on the rate of aluminum nitride film formation is, and vice versa.

[0018]

[0019] Among them, λ2 is the scaling factor, k3 is the influence coefficient of the target-substrate distance d on the surface morphology, Δd is the critical value of the target-substrate distance d, and k4 is the sputtering power p s Influence coefficient on surface morphology, Δp s is the sputtering power p s The critical value of the influence, the larger the surface morphology influence factor, the greater the influence on the roughness, that is, the rougher; conversely, the smaller the influence, the smoother.

[0020] Further,

[0021] The surface image of the aluminum nitride film is obtained by SEM, and the image is divided into m regions of equal area. When the SEM image is divided, the image regions with the same surface morphology are divided into the same region on the premise of ensuring that the areas are equal, and the interior of each divided region is interconnected.

[0022] According to the surface morphology of different areas after segmentation, the surface morphology influence factor φ is generated by analyzing the overall surface. s Based on this, m surface morphology influencing factors are generated for m different regions, which are recorded as φ1, φ2, ... φ m ,

[0023]

[0024] i=1、2、……m

[0025] Among them, γ i is the adjustment coefficient, Δφ is the adjusted difference;

[0026] According to the m surface morphology influencing factors, the m divided areas are graded according to the roughness, and the grading results provide a reference for the cutting method when the subsequent aluminum substrate is used for different requirements.

[0027] Further,

[0028] The thickness of the aluminum nitride film is obtained by using a surface topography measurement system, and the surface of the aluminum nitride film is divided into m regions of equal area. On the premise of ensuring that the areas are equal, aluminum nitride films of equal thickness are preferentially divided into the same region, and the interior of each divided region is interconnected;

[0029] Get the total thickness difference Δd of the aluminum nitride film m , the area after segmentation is S total is the total area of ​​the aluminum nitride film;

[0030] Prioritize the division of areas where the thickness difference is less than Δd = Δd', calculate the number of undivided areas n, and determine whether there is an area smaller than S seg The area is separated by the divided area; if there is no area, the area with a thickness difference less than Δd = Δd' + Δd" is divided, and Δd" is required to reduce the number of undivided areas by one; if there is, it is re-divided so that there is no area less than S segThe area is separated independently by the divided area, or divided according to the thickness difference less than Δd=Δd'+Δd"; repeat the above steps, the increase of Δd is Δd"'...Δd"""', the guidance area is divided into continuous areas, and the area division result provides a reference for the cutting method when the subsequent aluminum substrate is used for different requirements.

[0031] Further,

[0032] The thickness of the aluminum nitride film is obtained by using a surface topography measurement system. The surface of the aluminum nitride film is divided into λm regions of equal area, and the thickness difference Δd in each divided region is calculated. M , when Δd M ≥Δd N When Δd N If the difference threshold is reached, the deposition in this area is considered unqualified, and the deposition qualified area is obtained, and it is determined whether the area of ​​the deposition qualified area is greater than or equal to the minimum area S required by the design. N ; If it is greater than, it means that there are areas with qualified deposition; if it is less than, it means that there are no areas with qualified deposition, and it is necessary to adjust the parameters of each deposition in the subsequent deposition steps.

[0033] Further,

[0034] The overlap between the m regions divided according to the surface morphology influencing factor and the m regions divided according to the thickness difference of the aluminum nitride film is calculated, and the region with the highest overlap is preferentially selected as the optimal segmentation region.

[0035] Further,

[0036] The overlap between the m regions divided according to the surface morphology influencing factors and the qualified deposition region is calculated, and the region with the highest overlap is preferentially selected as the optimal segmentation region.

[0037] Further,

[0038] Considering the influence of the generation rate and surface morphology of aluminum nitride film on the performance of aluminum nitride film, electrical performance influencing factors are introduced into the sputtering control method of multi-source data fusion, and the electrical performance influencing factors are η1, η2, and η3 respectively;

[0039] The influencing factor η1 is the effect of nitrogen concentration on the electrical properties of aluminum nitride film. k5 is the influence coefficient;

[0040] The influencing factor η2 is the effect of sputtering pressure on the electrical properties of aluminum nitride films. k6 is the influence coefficient;

[0041] The influencing factor η3 is the influence of substrate temperature on the electrical properties of aluminum nitride film. k7 and k8 are influence coefficients;

[0042] Further,

[0043] Combining the electrical performance influencing factors η1, η2, and η3, the total influencing factor η=ω11η1+ω2η2+ω3η3, where ω1, ω2, and ω3 are the fusion coefficients of each factor.

[0044] The beneficial effects of the present invention are:

[0045] 1. The present invention adopts a DC magnetron reactive sputtering method to deposit a layer of aluminum nitride film with high thermal conductivity by controlling the parameters in the sputtering method.

[0046] 2. The present invention realizes the control of the film generation rate and the control of the surface morphology through the rate influencing factor and the surface morphology influencing factor.

[0047] 3. The present invention selects an aluminum substrate that meets high quality requirements by detecting the thickness and surface morphology of the aluminum nitride film.

[0048] 4. The present invention realizes monitoring of the electrical properties of aluminum nitride thin films by means of multi-source data fusion, thereby improving the DC magnetron reactive sputtering method.

[0049] Specific real-time method

[0050] The technical solutions in the embodiments of the present invention will be described clearly and completely below. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0051] The invention discloses a method for preparing a film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method. In the method, the deposition method is a direct current magnetron reactive sputtering method.

[0052] Embodiment 1

[0053] In the present invention, in the DC magnetron reactive sputtering method, the specific steps are as follows:

[0054] The target material is an aluminum plate with a purity of 99.999% and a thickness of 2.0 mm. The target is wire-cut into a circle with a diameter of 100 mm.

[0055] The base material is an aluminum plate with a purity of 99.999%, and its thickness and size are selected according to production requirements;

[0056] In order to improve the bonding strength of the substrate surface, the substrate surface was polished to a mirror surface, then ultrasonically cleaned in an acetone solution for 10 minutes, and finally ultrasonically cleaned in an ethanol solution for 10 minutes, and then taken out and blown dry for deposition. In order to ensure the purity of the surface, the best choice is to blow dry in a dust-free environment.

[0057] Select argon gas Ar with a purity of 99.999% and nitrogen gas N2 with a purity of 99.999%. In order to remove impurities on the surface of the target, it is shielded with a baffle before coating, and the target is pre-sputtered with argon gas Ar for 15 minutes. Argon gas Ar and nitrogen gas N2 are introduced into the sputtering chamber in a dynamic ratio by a gas flow meter, and pre-sputtered again for 30 minutes. After the voltage and current are stable, the baffle is removed and sputtering begins. The sputtering time is 2 hours.

[0058] The sputtering conditions of the present invention are as follows: the dynamic ratio is between 3:2 and 4:3, and the flow rate of the argon gas Ar is between 12.0 and 16.0 cm 3 / min, the flow rate of nitrogen N2 is 8.0-12.0cm 3 / min, sputtering gas pressure P a is 0.3-1.0Pa, the target-substrate distance d is 3-7cm, and the sputtering power p s The power is 100-200W, and the temperature T of the substrate is 50-300℃.

[0059] By dynamically controlling the ratio of argon gas Ar and nitrogen gas N2, it is possible to avoid the reduction of the ratio of nitrogen gas N2 after the nitrogen gas N2 is consumed, thereby affecting the formation of aluminum nitride on the surface of the substrate. The present invention controls the ratio dynamically according to the consumption of nitrogen gas. The consumption (or ratio) of nitrogen gas can be obtained by measurement or calculated according to the characteristics of the reaction. Since it belongs to the prior art, it will not be described here.

[0060] Embodiment 2

[0061] On the basis of the first embodiment, in this embodiment, the method further includes a sputtering control method based on multi-source data fusion, wherein the sputtering control method based on the multi-source data fusion is based on the target-substrate distance d and the sputtering power p collected during sputtering. s , substrate temperature T, sputtering gas pressure P a The rate influencing factor φ is fitted to the influence of the aluminum nitride film generation rate and film surface morphology v and surface morphology factor φ s ,

[0062]

[0063] Among them, λ1 is the scaling factor, k1 is the influence coefficient of the target-substrate distance d on the deposition rate, and k2 is the sputtering power p s The coefficient of influence on the deposition rate. The larger the rate influence factor is, the greater the influence on the rate of aluminum nitride film formation is, and vice versa.

[0064]

[0065] Among them, λ2 is the scaling factor, k3 is the influence coefficient of the target-substrate distance d on the surface morphology, Δd is the critical value of the target-substrate distance d, and k4 is the sputtering power p s Influence coefficient on surface morphology, Δp s is the sputtering power p s The critical value of the influence, the larger the surface morphology influence factor, the greater the influence on the roughness, that is, the rougher; conversely, the smaller the influence, the smoother.

[0066] Embodiment 3

[0067] On the basis of the second embodiment, in this embodiment, an image of the surface of the aluminum nitride film is obtained by SEM, and the image is divided into m regions of equal area. When the SEM image is divided, image regions with the same surface morphology are preferentially divided into the same region on the premise of ensuring that the areas are equal, and the interior of each divided region is interconnected;

[0068] According to the surface morphology of different areas after segmentation, the surface morphology influence factor φ is generated by analyzing the overall surface. s Based on this, m surface morphology influencing factors are generated for m different regions, which are recorded as φ1, φ2, ... φ m ,

[0069]

[0070] i=1、2、……m

[0071] Among them, γ i is the adjustment coefficient, Δφ is the adjusted difference;

[0072] According to the m surface morphology influencing factors, the m divided areas are graded according to the roughness, and the grading results provide a reference for the cutting method when the subsequent aluminum substrate is used for different requirements.

[0073] The thickness of the aluminum nitride film is obtained by using a surface topography measurement system, and the surface of the aluminum nitride film is divided into m regions of equal area. On the premise of ensuring that the areas are equal, aluminum nitride films of equal thickness are preferentially divided into the same region, and the interior of each divided region is interconnected;

[0074] Get the total thickness difference Δd of the aluminum nitride film m , the area after segmentation is S total is the total area of ​​the aluminum nitride film;

[0075] Prioritize the division of areas where the thickness difference is less than Δd = Δd', calculate the number of undivided areas n, and determine whether there is an area smaller than S segThe area is separated by the divided area; if there is no area, the area with a thickness difference less than Δd = Δd' + Δd" is divided, and Δd" is required to reduce the number of undivided areas by one; if there is, it is re-divided so that there is no area less than S seg The area is separated independently by the divided area, or divided according to the thickness difference less than Δd=Δd'+Δd"; repeat the above steps, the increase of Δd is Δd"'...Δd"""', the guidance area is divided into continuous areas, and the area division result provides a reference for the cutting method when the subsequent aluminum substrate is used for different requirements.

[0076] The thickness of the aluminum nitride film is obtained by using a surface topography measurement system. The surface of the aluminum nitride film is divided into λm regions of equal area, and the thickness difference Δd in each divided region is calculated. M , when Δd M ≥Δd N When Δd N If the difference threshold is reached, the deposition in this area is considered unqualified, and the deposition qualified area is obtained, and it is determined whether the area of ​​the deposition qualified area is greater than or equal to the minimum area S required by the design. N ; If it is greater than, it means that there are areas with qualified deposition; if it is less than, it means that there are no areas with qualified deposition, and it is necessary to adjust the parameters of each deposition in the subsequent deposition steps.

[0077] The overlap between the m regions divided according to the surface morphology influencing factor and the m regions divided according to the thickness difference of the aluminum nitride film is calculated, and the region with the highest overlap is preferentially selected as the optimal segmentation region.

[0078] The overlap between the m regions divided according to the surface morphology influencing factors and the qualified deposition region is calculated, and the region with the highest overlap is preferentially selected as the optimal segmentation region.

[0079] Embodiment 4

[0080] On the basis of the third embodiment, in this embodiment, considering the influence of the generation rate and surface morphology of the aluminum nitride film on the performance of the aluminum nitride film, electrical performance influencing factors are introduced into the sputtering control method of multi-source data fusion, and the electrical performance influencing factors are η1, η2, and η3 respectively;

[0081] The influencing factor η1 is the effect of nitrogen concentration on the electrical properties of aluminum nitride film. k5 is the influence coefficient;

[0082] The influencing factor η2 is the effect of sputtering pressure on the electrical properties of aluminum nitride films. k6 is the influence coefficient;

[0083] The influencing factor η3 is the influence of substrate temperature on the electrical properties of aluminum nitride film. k7 and k8 are influence coefficients;

[0084] Further,

[0085] Combining the electrical performance influencing factors η1, η2, and η3, the total influencing factor η=ω1η1+ω2η2+ω3η3, where ω1, ω2, and ω3 are the fusion coefficients of each factor.

[0086] The beneficial effects of the present invention are:

[0087] 1. The present invention adopts a DC magnetron reactive sputtering method to deposit a layer of aluminum nitride film with high thermal conductivity by controlling the parameters in the sputtering method.

[0088] 2. The present invention controls the film generation rate and the surface morphology through the rate influencing factor and the surface morphology influencing factor, thereby improving the thermal conductivity of the aluminum nitride film.

[0089] 3. The present invention detects the thickness and surface morphology of the aluminum nitride film to select an aluminum substrate suitable for high quality requirements, thereby improving the thermal conductivity of the aluminum nitride film.

[0090] 4. The present invention realizes monitoring of the electrical properties of aluminum nitride film by means of multi-source data fusion, realizes improvement of the DC magnetron reactive sputtering method, and improves the thermal conductivity of the aluminum nitride film.

[0091] Finally, it should be noted that the above is only a preferred embodiment of the present invention and is not intended to limit the present invention. Although the present invention has been described in detail with reference to the aforementioned embodiments, it is still possible for those skilled in the art to modify the technical solutions described in the aforementioned embodiments or to make equivalent substitutions for some of the technical features therein. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for producing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method, characterized in that: In the method, the deposition method is a DC magnetron reactive sputtering method. In the DC magnetron reactive sputtering method, The target material is an aluminum plate with a purity of 99.999% and a thickness of 2.0 mm. The target wire is cut into a circle with a diameter of 100 mm. The substrate is an aluminum plate with a purity of 99.999%. Its thickness and size are selected according to the production requirements. The surface of the substrate is polished to a mirror surface, then ultrasonically cleaned in an acetone solution for 10 minutes, and finally ultrasonically cleaned in an ethanol solution for 10 minutes. The substrate is taken out and blown dry to prepare an aluminum substrate for deposition. Select argon Ar with a purity of 99.999% and nitrogen N2 with a purity of 99.999%. Before coating, shield the target with a baffle and pre-sputter the target with argon Ar for 15 minutes. Introduce argon Ar and nitrogen N2 into the sputtering chamber in a dynamic proportion using a gas flow meter, and pre-sputter for 30 minutes again. After the voltage and current are stable, remove the baffle and start sputtering. The sputtering time is 2 hours.

2. The method of claim 1 for producing a thin film having improved thermal conductivity on the surface of an aluminum substrate by a deposition method, characterized in that: The dynamic ratio is between 3:2 and 4:3, and the flow rate of the argon gas Ar is 12.0-16.0 cm 3 / min, the flow rate of nitrogen N2 is 8.0-12.0cm 3 / min, sputtering gas pressure P a is 0.3-1.0Pa, the target-substrate distance d is 3-7cm, and the sputtering power p s The power is 100-200W, and the temperature T of the substrate is 50-300℃.

3. The method of manufacturing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method according to claim 2, characterized in that: The method also includes a sputtering control method based on multi-source data fusion, wherein the sputtering control method based on the target-substrate distance d and the sputtering power p collected during sputtering s , substrate temperature T, sputtering gas pressure P a The rate influencing factor φ is fitted to the influence of the aluminum nitride film generation rate and film surface morphology v and surface morphology factor φ s , Among them, λ1 is the scaling factor, k1 is the influence coefficient of the target-substrate distance d on the deposition rate, and k2 is the sputtering power p s The influence coefficient on the deposition rate. The larger the rate influence factor is, the greater the influence on the rate of aluminum nitride film formation is, and vice versa. Among them, λ2 is the scaling factor, k3 is the influence coefficient of the target-substrate distance d on the surface morphology, Δd is the critical value of the target-substrate distance d, and k4 is the sputtering power p s Influence coefficient on surface morphology, Δp s is the sputtering power p s The critical value of the influence, the larger the surface morphology influence factor, the greater the influence on the roughness, that is, the rougher; conversely, the smaller the influence, the smoother.

4. The method of manufacturing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method according to claim 3, characterized in that: The surface image of the aluminum nitride film is obtained by SEM, and the image is divided into m regions of equal area. When the SEM image is divided, the image regions with the same surface morphology are divided into the same region on the premise of ensuring that the areas are equal, and the interior of each divided region is interconnected. According to the surface morphology of different areas after segmentation, the surface morphology influence factor φ is generated by analyzing the overall surface. s Based on this, m surface morphology influencing factors are generated for m different regions, which are recorded as φ1, φ2, ... φ m , i=1、2、……m Among them, γ i is the adjustment coefficient, Δφ is the adjusted difference; According to the m surface morphology influencing factors, the m divided areas are graded according to the roughness, and the grading results provide a reference for the cutting method when the subsequent aluminum substrate is used for different requirements.

5. The method for producing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method according to claim 4, characterized in that: The thickness of the aluminum nitride film is obtained by using a surface topography measurement system, and the surface of the aluminum nitride film is divided into m regions of equal area. On the premise of ensuring that the areas are equal, aluminum nitride films of equal thickness are preferentially divided into the same region, and the interior of each divided region is interconnected; Get the total thickness difference Δd of the aluminum nitride film m , the area after segmentation is S total is the total area of ​​the aluminum nitride film; Prioritize the division of areas where the thickness difference is less than Δd = Δd', calculate the number of undivided areas n, and determine whether there is an area smaller than S seg The area is separated by the divided area; If there is no such difference, the area with a thickness difference less than Δd = Δd' + Δd" is divided, and Δd" is required to reduce the number of undivided areas by one; if there is such a difference, it is re-divided so that there is no area less than S seg The area is separated independently by the divided area, or divided according to the thickness difference less than Δd=Δd'+Δd"; repeat the above steps, the increase of Δd is Δd"'...Δd"""', the guidance area is divided into continuous areas, and the area division result provides a reference for the cutting method when the subsequent aluminum substrate is used for different requirements.

6. The method of claim 4 for producing a thin film having improved thermal conductivity on the surface of an aluminum substrate by a deposition method, characterized in that: The thickness of the aluminum nitride film is obtained by using a surface topography measurement system. The surface of the aluminum nitride film is divided into λm regions of equal area, and the thickness difference Δd in each divided region is calculated. M , when Δd M ≥Δd N When Δd N If the difference threshold is reached, the deposition in this area is considered unqualified, and the deposition qualified area is obtained, and it is determined whether the area of ​​the deposition qualified area is greater than or equal to the minimum area S required by the design. N ; If it is greater than, it means that there are areas with qualified deposition; if it is less than, it means that there are no areas with qualified deposition, and it is necessary to adjust the parameters of each deposition in the subsequent deposition steps.

7. The method for producing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method according to claim 5, characterized in that: The overlap between the m regions divided according to the surface morphology influencing factor and the m regions divided according to the thickness difference of the aluminum nitride film is calculated, and the region with the highest overlap is preferentially selected as the optimal segmentation region.

8. The method of manufacturing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method according to claim 6, characterized in that: The overlap between the m regions divided according to the surface morphology influencing factors and the qualified deposition region is calculated, and the region with the highest overlap is preferentially selected as the optimal segmentation region.

9. A method for producing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method according to claim 8 or 7, characterized in that: Considering the influence of the generation rate and surface morphology of aluminum nitride film on the performance of aluminum nitride film, electrical performance influencing factors are introduced into the sputtering control method of multi-source data fusion, and the electrical performance influencing factors are η1, η2, and η3 respectively; The influencing factor η1 is the effect of nitrogen concentration on the electrical properties of aluminum nitride film. k5 is the influence coefficient; The influencing factor η2 is the effect of sputtering pressure on the electrical properties of aluminum nitride films. k6 is the influence coefficient; The influence factor η3 is the influence of substrate temperature on the electrical properties of aluminum nitride film. k7 and k8 are influence coefficients.

10. The method of manufacturing a thin film with improved thermal conductivity on the surface of an aluminum substrate by a deposition method according to claim 9, characterized in that: Combining the electrical performance influencing factors η1, η2, and η3, the total influencing factor η=ω1η1+ω2η2+ω3η3, where ω1, ω2, and ω3 are the fusion coefficients of each factor.

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