Preparation method of low-roughness molybdenum film with novel surface structure

Abstract

The invention discloses a preparation method of a low-roughness molybdenum film with a novel surface structure. The preparation method comprises the following steps: S1, cleaning a substrate; s2, placing a sample wafer, wherein when the sample wafer is placed, an included angle between the sample wafer and the normal direction is 60 degrees, and an included angle between the sample wafer and the incident direction of the target material is 120 degrees; and S3, plating a molybdenum film, namely plating a layer of molybdenum film with the thickness of 250-450 nm by taking metal Mo as a target material. The surface structure of the plated molybdenum film has the characteristic of directional arrangement, and the roughness Ra / Rq of the molybdenum film is less than 0.6. The preparation method has the beneficial effects that the surface structure with the directionally arranged surface is prepared, the method is simple, the electrical property of the film is effectively improved, the performance of the modified film can be improved when the Mo film is subjected to surface modification, the difficulty of preparing molybdenum disulfide is reduced, and the preparation cost is reduced. And the performances of binding force and the like of the molybdenum film and other film layers in the CIGS back electrode are improved.

Description

Technical Field

[0001] The invention belongs to the technical field of glass film manufacturing and relates to a method for preparing a low-roughness molybdenum film with a novel surface structure. Background Art

[0002] Molybdenum electrodes have been used in CIGS thin-film solar cells for a long time, and the technology of preparing molybdenum disulfide by molybdenum thin film catalysis has become increasingly mature. Under the current magnetron sputtering process conditions, molybdenum thin films can only produce worm-like and disorderly surface structures (such as Figure 1 As shown), and the lowest resistivity is 3*10 -5 The disordered surface structure will increase the difficulty of subsequent preparation of MoS2 thin film, and the high resistivity is also the biggest difference between Mo conductive film and Cu and Ag conductive film. The roughness Ra / Rq of ordinary Mo film is above 2. The higher roughness will increase the difficulty of preparing two-dimensional materials and have a greater impact on the subsequent process of CIGS thin-film solar cells. Summary of the invention

[0003] The purpose of the present invention is to improve the electrical properties, surface morphology and roughness of the film and to provide a method for preparing a low-roughness molybdenum film with a novel surface structure.

[0004] In order to achieve the above object, the technical solution adopted by the present invention is as follows: A low-roughness molybdenum film with a novel surface structure, characterized by comprising the following steps: (1) Clean the ordinary white glass substrate to remove surface stains, and then blow dry or bake it for later use; (2) The dried ordinary glass substrate is coated by magnetron sputtering. When placing the glass substrate, the substrate should be at an angle of 60° to the normal direction and 120° to the incident direction of the target. Metal Mo is used as the target to coat a molybdenum film with a thickness of 250-450nm.

[0005] Furthermore, the surface structure of the molybdenum film is directional and the roughness Ra / Rq is less than 0.6.

[0006] The beneficial effects of the present invention are as follows: the present invention utilizes magnetron sputtering technology, and can prepare a surface structure with a directional arrangement surface only by changing the angle between the substrate and the magnetic field and the electric field, and by non-horizontally placing the substrate. The method is simple, and effectively improves the electrical properties of the film. When the Mo film is surface modified, the performance of the modified film can be improved, the difficulty of preparing molybdenum disulfide can be reduced, and the bonding strength between the molybdenum film and other film layers in the CIGS back electrode can be improved. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 Surface structure of normal sputtered molybdenum film; Figure 2 Application Example 1 Surface structure diagram; Figure 3 Surface structure diagram of application example 2. DETAILED DESCRIPTION

[0007] A method for preparing a low-roughness molybdenum film with a novel surface structure, the specific implementation steps are as follows: Example

[0008] The present invention provides a low-roughness molybdenum film with a novel surface structure, comprising the following steps: S1. Use 1.1mm ordinary glass as the substrate, clean the substrate, remove stains on the surface of the substrate and blow dry; S2. Place the cleaned substrate into the magnetron sputtering coating equipment. When placing it, place the substrate at an angle of 30° to the horizontal direction and 120° to the incident direction of the target. Evacuate the sputtering chamber. When the vacuum degree is 5*10 -5 When the target material is Mo, a DC power supply of 300W is used, and 30sccm of argon gas is introduced for pre-sputtering. After the pre-sputtering is completed, the vacuum degree is adjusted to 5*10 -1 Pa, sputtering coating, coating thickness 300nm, resistivity 1.5*10 -5 Ω*cm, roughness Ra=0.460nm, Rq=0.591nm molybdenum film.

[0009] Example 2 S1. Use 1.1mm ordinary glass as the substrate, clean the substrate, remove stains on the surface of the substrate and blow dry; S2. Place the cleaned substrate into the magnetron sputtering coating equipment. When placing it, place the substrate at an angle of 60° to the normal direction and 120° to the incident direction of the target. Evacuate the sputtering chamber. When the vacuum degree is 5*10 -5 When the target material is Mo, a DC power supply of 300W is used, and 30sccm of argon gas is introduced for pre-sputtering. After the pre-sputtering is completed, the vacuum degree is adjusted to 5*10 -1 Pa, sputtering coating, coating thickness 400nm, resistivity 1.2*10 -5 Molybdenum film with Ω*cm, roughness Ra=0.427nm, Rq=0.555nm.

[0010] The above is only a preferred embodiment of the patent of the present invention, and does not limit the patent of the present invention in any form; any technician familiar with the field can use the above disclosed methods and technical contents to make many possible changes and modifications to the technical solution of the patent of the present invention without departing from the scope of the technical solution of the patent of the present invention, or modify it into an equivalent embodiment of equivalent changes. Therefore, any simple modification, equivalent replacement, equivalent change and modification made to the above embodiments based on the technical essence of the patent of the present invention without departing from the content of the technical solution of the patent of the present invention still falls within the scope of protection of the technical solution of the present invention.

Claims

1. A method for preparing a low-roughness molybdenum film with a novel surface structure, characterized in that: The following steps are involved: S1, cleaning substrate; S2. Place the sample. The sample should be placed at an angle of 60° to the normal direction and 120° to the incident direction of the target; S3, coating a molybdenum film, using metal Mo as a target material, coating a molybdenum film with a thickness of 250-450nm.

2. The method for preparing a low-roughness molybdenum film with a novel surface structure according to claim 1, characterized in that: The surface structure of the deposited molybdenum film has the characteristic of directional arrangement.

3. The method for preparing a low-roughness molybdenum film with a novel surface structure according to claim 1, characterized in that: The roughness Ra / Rq of the plated molybdenum film is less than 0.6.

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