Reactor and transistor processing technology

Abstract

The invention relates to the technical field of semiconductor processing, and discloses a reactor and a transistor processing technology. Wherein the reactor comprises a shell, a lifting device, a heating device and a spraying device. Specifically, the shell is provided with a reaction cavity; the lifting device comprises a lifting driving part and a carrying disc, the lifting driving part is arranged at the cavity bottom of the reaction cavity, and the lifting driving part is in driving connection with the carrying disc, so that the carrying disc moves up and down between the first reaction area and the second reaction area; the heating device comprises a first heating piece and a second heating piece, and the first heating piece is used for heating the first reaction area to a first preset temperature; the second heating element is used for heating the second reaction area to a second preset temperature; the first reaction zone is higher than the second reaction zone, and the first preset temperature is lower than the second preset temperature; the spraying device is arranged at the top of the reaction cavity and is used for spraying reactants. The growth of the drift layer and the polarization layer is carried out in one reactor, the migration rate of the two-dimensional electron gas is higher, and the pressure resistance is better.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor processing technology, and in particular to a reactor and a transistor processing technology. Background Art

[0002] The third generation semiconductor is a wide bandgap semiconductor material mainly composed of drift layer and polarization layer. The bandgap width of the drift layer is relatively large and can withstand high voltage. The material of the polarization layer needs to have strong spontaneous polarization, and nitride is often used. The two-dimensional electron gas of the polarization layer is relatively strong. The combination of the two has the characteristics of high breakdown electric field, high saturation electron velocity, high thermal conductivity, high electron density, high mobility, and can withstand high power.

[0003] However, the growth system of each layer of material is completely different, and the existing reaction chamber structure is not compatible with the growth of two material systems. If two reaction chambers are used, impurities between the two material systems will cause leakage during the growth process, reducing the mobility and withstand voltage of the third-generation semiconductor.

[0004] Based on this, a reactor and transistor processing technology are urgently needed to solve the above-mentioned problems. Summary of the invention

[0005] Based on the above, the purpose of the present invention is to provide a reactor and a transistor processing technology, which realizes the growth of a drift layer and a polarization layer in one reactor without replacing the reaction chamber. The mobility of the two-dimensional electron gas is higher, the voltage resistance is better, and the product quality is improved.

[0006] To achieve the above object, the present invention adopts the following technical solutions:

[0007] In one aspect, a reactor is provided, comprising:

[0008] A housing having a reaction chamber;

[0009] A lifting device, comprising a lifting drive and a carrier, wherein the lifting drive is disposed at the bottom of the reaction chamber, and the lifting drive is drivingly connected to the carrier to enable the carrier to move up and down between the first reaction zone and the second reaction zone;

[0010] The heating device comprises a first heating element and a second heating element, wherein the first heating element is used to heat the first reaction zone to a first preset temperature; the second heating element is used to heat the second reaction zone to a second preset temperature; the first reaction zone is higher than the second reaction zone, and the first preset temperature is lower than the second preset temperature;

[0011] A spray device is arranged at the top of the reaction chamber and is used for spraying reactants.

[0012] As an optimal technical solution for a reactor, the spray device includes a spray head, on which a plurality of air holes are evenly arranged, a pipeline is arranged in the air hole, a first gas channel is formed between the pipeline and the inner wall of the air hole, the pipeline is provided with a second gas channel, the first gas channel is used to spray a first reaction gas, and the second gas channel is used to spray a second reaction gas.

[0013] As a preferred technical solution for a reactor, the diameter of the pipeline is adjustable to adjust the ratio of the cross-sectional areas of the first gas channel and the second gas channel.

[0014] As a preferred technical solution for a reactor, the diameter of the second gas channel is D, the distance between the carrier plate and the spray device is A, and the ratio of D to A is in the range of 0.001-0.05.

[0015] As a preferred technical solution for a reactor, the first heating element and the second heating element are both heated by induction coils.

[0016] As a preferred technical solution of a reactor, the heating temperature range of the first heating element is 1000° C.-1300° C.; and / or

[0017] The heating temperature of the second heating element ranges from 1300°C to 1650°C.

[0018] As a preferred technical solution of a reactor, when the carrier plate is located in the first reaction zone, the distance between the carrier plate and the spray device is 30 mm-80 mm; and / or

[0019] When the carrier plate is located in the second reaction zone, the distance between the carrier plate and the spray device is 150 mm-200 mm.

[0020] On the other hand, a transistor processing technology is provided, using the reactor described in any of the above schemes, and the transistor processing technology comprises the following steps:

[0021] S1, placing the substrate on a carrier;

[0022] S2, the carrier moves to the second reaction zone, the spray device sprays the reactant, the second heating element heats the second reaction zone to a second preset temperature, and the reactant is deposited on the surface of the substrate to form a drift layer;

[0023] S3, the carrier moves to the first reaction zone, the spray device sprays the reactant, the first heating element heats the first reaction zone to a first preset temperature, and the reactant is deposited on the surface of the drift layer to form a polarization layer.

[0024] As a preferred technical solution for a transistor processing process, the spray device includes a plurality of first gas channels and a plurality of second gas channels, wherein the first gas channels and the second gas channels respectively spray different reaction gases to the carrier; the second gas channel is arranged around the first gas channel, and the diameter of the second gas channel is adjustable;

[0025] The diameter of the second gas channel in the step S2 is smaller than the diameter of the second gas channel in the step S3.

[0026] As a preferred technical solution for a transistor processing technology, the polarization layer includes a buffer layer, a channel layer, a barrier layer and a cap layer in sequence along a direction away from the drift layer;

[0027] In the step S3, the buffer layer, the channel layer, the barrier layer and the cap layer are formed in sequence.

[0028] The beneficial effects of the present invention are:

[0029] The present invention provides a reactor and transistor processing technology. During processing, a substrate is placed on a carrier; the carrier moves to a second reaction zone, a spray device sprays reactants, a second heating element heats the second reaction zone to a second preset temperature, and reactants are deposited on the surface of the substrate to form a drift layer, so as to meet the requirements that the drift layer needs a relatively high temperature and a relatively large reaction chamber height; then, the carrier moves to a first reaction zone, a spray device sprays reactants, a first heating element heats the first reaction zone to a first preset temperature, and reactants are deposited on the surface of the drift layer to form a polarization layer, so as to meet the requirements that the polarization layer needs a relatively low temperature and a relatively small reaction chamber height. The present invention realizes the growth of a drift layer and a polarization layer in one reactor without replacing the reaction chamber, reduces interface contamination and defects during the growth process, avoids impurities and contaminants that may be introduced due to the replacement of the reaction chamber during material conversion, and thus ensures a high-quality interface between the drift layer and the polarization layer. High-quality interfaces reduce the scattering and energy loss of electrons during transmission, thereby improving the mobility of the two-dimensional electron gas. The integrated growth also optimizes the stress distribution inside the material, allowing the polarization layer to more effectively exert its electrical properties, such as enhancing electric field shielding and increasing carrier concentration, all of which help to improve the device's voltage resistance. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments of the present invention. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on the contents of the embodiments of the present invention and these drawings without paying any creative work.

[0031] Figure 1 It is a schematic structural diagram of a reactor provided in a specific embodiment of the present invention;

[0032] Figure 2 It is a structural schematic diagram of a spray device provided in a specific embodiment of the present invention;

[0033] Figure 3 It is a flow chart of a transistor processing technology provided by a specific embodiment of the present invention.

[0034] The following are marked in the figure:

[0035] 1. Shell; 11. Reaction chamber; 12. First reaction zone; 13. Second reaction zone;

[0036] 2. Lifting device; 21. Carrying plate;

[0037] 3. Heating device; 31. First heating element; 32. Second heating element;

[0038] 4. Spraying device; 41. Spraying head; 42. Pipeline; 43. First gas channel; 44. Second gas channel. DETAILED DESCRIPTION

[0039] The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It is to be understood that the specific embodiments described herein are only used to explain the present invention, rather than to limit the present invention. It should also be noted that, for ease of description, only parts related to the present invention, rather than all structures, are shown in the accompanying drawings.

[0040] In the description of the present invention, unless otherwise clearly specified and limited, the terms "connected", "connected", and "fixed" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0041] In the present invention, unless otherwise clearly specified and limited, a first feature being "above" or "below" a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being "above", "above" and "above" a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being "below", "below" and "below" a second feature includes that the first feature is directly below and obliquely below the second feature, or simply indicates that the first feature is lower in level than the second feature.

[0042] In the description of this embodiment, the terms "upper", "lower", "left", "right" and other directions or positional relationships are based on the directions or positional relationships shown in the drawings, and are only for the convenience of description and simplification of operation, rather than indicating or implying that the device or element referred to must have a specific direction, be constructed and operate in a specific direction, and therefore cannot be understood as limiting the present invention. In addition, the terms "first" and "second" are only used to distinguish in the description and have no special meaning.

[0043] like Figure 1 As shown, this embodiment provides a reactor, which includes a shell 1, a lifting device 2, a heating device 3 and a spray device 4. Specifically, the shell 1 is provided with a reaction chamber 11; the lifting device 2 includes a lifting drive (not shown) and a carrier 21, the lifting drive is arranged at the bottom of the reaction chamber 11, and the lifting drive is driven and connected to the carrier 21, so that the carrier 21 can be lifted and moved between the first reaction zone 12 and the second reaction zone 13; the heating device 3 includes a first heating element 31 and a second heating element 32, the first heating element 31 is used to heat the first reaction zone 12 to a first preset temperature; the second heating element 32 is used to heat the second reaction zone 13 to a second preset temperature; the first reaction zone 12 is higher than the second reaction zone 13, and the first preset temperature is lower than the second preset temperature; the spray device 4 is arranged at the top of the reaction chamber 11, and the spray device 4 is used to spray the reactant.

[0044] During processing, the substrate is placed on the carrier 21; the carrier 21 moves to the second reaction zone 13, the spray device 4 sprays the reactant, the second heating element 32 heats the second reaction zone 13 to the second preset temperature, and the reactant is deposited on the surface of the substrate to form a drift layer, so as to meet the requirements that the drift layer needs a relatively high temperature and a relatively large height of the reaction chamber 11; then, the carrier 21 moves to the first reaction zone 12, the spray device 4 sprays the reactant, the first heating element 31 heats the first reaction zone 12 to the first preset temperature, and the reactant is deposited on the surface of the drift layer to form a polarization layer, so as to meet the requirements that the polarization layer needs a relatively low temperature and a relatively small height of the reaction chamber 11. This embodiment realizes the growth of the drift layer and the polarization layer in one reactor without replacing the reaction chamber 11, and the mobility of the two-dimensional electron gas is higher, the pressure resistance is better, and the product quality is improved.

[0045] Preferably, if Figure 1 and Figure 2 As shown, the spray device 4 includes a spray head 41, and a plurality of vents are evenly arranged on the spray head 41. A pipeline 42 is arranged in the vent, and a first gas channel 43 is formed between the pipeline 42 and the inner wall of the vent. The pipeline 42 is provided with a second gas channel 44. The first gas channel 43 is used to spray the first reaction gas, and the second gas channel 44 is used to spray the second reaction gas. Among them, the first gas channel 43 is arranged around the second gas channel 44. When the first gas channel 43 sprays the first reaction gas and the second gas channel 44 sprays the second reaction gas, it is convenient to mix the first reaction gas and the second reaction gas, thereby improving the uniformity of the mixing of the reactants and thus improving the molding quality of the product.

[0046] Since the heights of the carrier 21 in the first reaction zone 12 and the second reaction zone 13 are different, in order to ensure that the mixing position of the first reaction gas and the second reaction gas is located on the carrier 21. In this embodiment, the diameter of the pipeline 42 is adjustable to adjust the ratio of the first gas channel 43 and the second gas channel 44, thereby adjusting the mixing ratio of the first reaction gas and the second reaction gas on the carrier 21. In this embodiment, by adjusting the ratio of the cross-sectional areas of the first gas channel 43 and the second gas channel 44, the mixed concentration ratio of the reaction gas on the surface of the growth carrier 21 is adjusted. Different concentration ratios determine different properties of the grown material. For example, when generating a drift layer, the first reaction gas is SiH4 and the second reaction gas is CH4. The diameter of the pipeline 42 is adjusted, and the ratio of the cross-sectional areas of the first gas channel 43 and the second gas channel 44 is 0.05, so that the concentration ratio of the first reaction gas and the second reaction gas is 1:1. When generating the polarization layer, the first reaction gas is TMGa (Trimethyl Gallium) and TMAl (Trimethylaluminium), and the second reaction gas is NH3. The diameter of the pipeline 42 is adjusted, and the ratio of the cross-sectional area of ​​the first gas channel 43 and the second gas channel 44 is 0.005, so that the proportion of NH3 in the mixed gas is greater than 95%. Therefore, by adjusting the diameter of the pipeline 42, the ratio of the first gas channel 43 and the second gas channel 44 is adjusted, and then the concentration ratio of the first reaction gas and the second reaction gas is adjusted to ensure that the above-mentioned concentration ratio requirements are met when generating the polarization layer and the drift layer.

[0047] Furthermore, when the drift layer is generated, the background impurity concentration of the first reaction gas and the second reaction gas is required to be low, ensuring that the background impurity concentration is less than 1E15cm -3 Therefore, it is necessary to make the mixing length of the first gas channel 43 and the second gas channel 44 as short as possible to reduce the introduction of impurities. In this embodiment, when the drift layer is generated, the carrier plate 21 is located in the first reaction zone 12, shortening the mixing length of the first reaction gas and the second reaction gas, reducing the background impurity concentration in the mixed gas, increasing the diameter of the pipeline 42, and then reducing the gas flow rate of the second reaction gas, ensuring that the first reaction gas and the second reaction gas are completely mixed on the carrier plate 21 in the first reaction zone 12.

[0048] When generating the polarization layer, the first reaction gas and the second reaction gas have a premixing process to fully eliminate defects such as vacancies in the material. Therefore, it is necessary to increase the mixing length of the first gas channel 43 and the second gas channel 44 for premixing. In this embodiment, when generating the polarization layer, the carrier plate 21 is located in the second reaction zone 13, and the mixing length of the first reaction gas and the second reaction gas is increased so that the first reaction gas and the second reaction gas are fully premixed to eliminate vacancy defects in the material. Reduce the diameter of the pipeline 42, and then increase the gas flow rate of the second reaction gas, to ensure that the mixing position of the first reaction gas and the second reaction gas is located on the carrier plate 21 of the second reaction zone 13.

[0049] In this embodiment, the pipeline 42 can be formed by winding a sheet of a certain length. The more turns the sheet is wound, the smaller the diameter of the pipeline 42; conversely, the smaller the number of turns the sheet is wound, the larger the diameter of the pipeline 42, thereby achieving adjustable diameter of the pipeline 42. Of course, in other embodiments, pipelines 42 of different diameters can be directly replaced to achieve adjustment of the ratio of the first gas channel 43 and the second gas channel 44.

[0050] In this embodiment, the diameter of the second gas channel 44 is D, the distance between the carrier 21 and the spray device 4 is A, and the ratio of D to A ranges from 0.001 to 0.05. In computational fluid dynamics (CFD), heat diffusion and concentration diffusion between gases are the key to understanding the multi-component gas mixing process. These two diffusion mechanisms act together in the gas mixture, driving different gas components to migrate from high concentration or high temperature areas to low concentration or low temperature areas until an equilibrium state is reached. In this embodiment, the ratio of D to A ranges from 0.001 to 0.05. This ratio is obtained by CFD simulation and experimental data inversion, mainly considering the heat diffusion and concentration diffusion effects of the first reaction gas and the second reaction gas within the distance from the shower head 41 to the carrier 21. By simulating the dynamic process of gas mixing under different D / A ratios, the diffusion behavior and mixing efficiency of the first reaction gas and the second reaction gas between the spray device 4 and the carrier 21 can be observed. When the ratio is within this range, it can ensure that the first reaction gas and the second reaction gas are completely mixed on the carrier 21, and effective coverage is achieved within the distance from the shower head 41 to the carrier 21. If the ratio is too large, the completely mixed position of the first reaction gas and the second reaction gas will be too short and unable to reach the carrier 21. If the ratio is too small, the completely mixed position will exceed the position of the carrier 21, and high-quality materials cannot be formed on the carrier 21.

[0051] In the prior art, in addition to the different supply of respective source gases, the growth of drift layer materials requires relatively high temperature. Moreover, in order to avoid pre-reaction of the shower head at high temperature, the height of the reaction chamber is relatively large. In addition, in order to increase the growth rate of nitride materials, the height of the reaction chamber is generally relatively low.

[0052] Further, both the first heating element 31 and the second heating element 32 are heated by induction coils. In this embodiment, when generating a polarization layer, the first heating element 31 is used for heating, and the growth temperature of the nitride material in the polarization layer is relatively low, and the heating temperature range of the first heating element 31 is 1000°C-1300°C, which meets the low growth temperature requirement of the polarization layer; and / or when generating a drift layer, the second heating element 32 is used for heating, and the growth temperature of the SiC or GaO material in the drift layer is relatively high, and the heating temperature range of the second heating element 32 is 1300°C-1650°C, which meets the high growth temperature requirement of the SiC or GaO material in the drift layer. In this embodiment, the heating temperature of the first heating element 31 can be 1000℃, 1050℃, 1100℃, 1150℃, 1200℃, 1250℃ or 1300℃; the heating temperature of the second heating element 32 can be 1300℃, 1350℃, 1400℃, 1450℃, 1500℃, 1550℃, 1600℃ or 1650℃.

[0053] Furthermore, when generating the polarization layer, in order to improve the growth efficiency of the nitride material, the distance between the first reaction zone 12 and the spray device 4 is relatively small, so that the carrier 21 can accumulate a large amount of AlGaN (aluminum gallium nitride) based materials in a short time. In this embodiment, the carrier 21 is located in the first reaction zone 12, and the distance between the carrier 21 and the spray device 4 is 30mm-80mm, which improves the growth efficiency of the nitride material. If the distance between the carrier 21 and the spray device 4 is too large, it will cause the byproducts of TMAl and NH3 to accumulate on the carrier 21 located in the first reaction zone 12, and the growth efficiency will be too low; if the distance between the carrier 21 and the spray device 4 is too small, the first reaction gas and the second reaction gas will accumulate on the carrier 21 before they are completely mixed, affecting the molding quality.

[0054] When the drift layer is generated, in order to prevent the high temperature environment of the second reaction zone 13 from causing the gas in the spray device 4 to pre-react, the distance between the second reaction zone 13 and the spray device 4 is relatively large. In this embodiment, and / or when the carrier 21 is located in the second reaction zone 13, the distance between the carrier 21 and the spray device 4 is 150mm-200mm. If the distance between the carrier 21 and the spray device 4 is too small, the high temperature environment of the second reaction zone 13 will cause the gas in the spray device to pre-react, resulting in defective products; if the distance between the carrier 21 and the spray device 4 is too large, too many byproducts of SiH4 and CH4 growth will accumulate on the carrier 21, and the growth efficiency will be too low.

[0055] In this embodiment, when the carrier plate 21 is located in the first reaction zone 12, the distance between the carrier plate 21 and the spray device 4 can be set to 30 mm, 40 mm, 50 mm, 60 mm, 70 mm or 80 mm. When the carrier plate 21 is located in the second reaction zone 13, the distance between the carrier plate 21 and the spray device 4 can be set to 150 mm, 160 mm, 170 mm, 180 mm, 190 mm or 200 mm. In this embodiment, the lifting drive member is a lifting motor or a hydraulic cylinder.

[0056] like Figure 1-Figure 3 As shown, this embodiment also provides a transistor processing technology, using the above reactor, the transistor processing technology includes the following steps:

[0057] S1, placing the substrate on the carrier 21;

[0058] S2, the carrier plate 21 moves to the second reaction zone 13, the spray device 4 sprays the reactants, the second heating element 32 heats the second reaction zone 13 to a second preset temperature, and the reactants are deposited on the substrate surface to form a drift layer;

[0059] S3, the carrier plate 21 moves to the first reaction zone 12, the spray device 4 sprays the reactants, the first heating element 31 heats the first reaction zone 12 to a first preset temperature, and the reactants are deposited on the surface of the drift layer to form a polarization layer.

[0060] The transistor processing technology realizes the growth of the drift layer and the polarization layer in one reactor without replacing the reaction chamber 11. The mobility of the two-dimensional electron gas is higher, the pressure resistance is better, and the product quality is improved.

[0061] In step S2, the drift layer uses a SiC drift layer, and the carrier 21 with the substrate is moved to the second reaction zone 13. At this time, the distance between the carrier 21 and the spray device 4 is 180 mm. The second reaction zone 13 is heated to 1650°C, which is the best generation condition for the SiC drift layer. The spray device 4 sprays the reactants, and a 50um SiC drift layer is formed on the surface of the substrate. In other embodiments, the drift layer can also use GA2O3 or SiN.

[0062] In step S3, the polarization layer includes a buffer layer, a channel layer, a barrier layer and a cap layer in the direction away from the drift layer; in step S3, the buffer layer, the channel layer, the barrier layer and the cap layer are formed in sequence. In this embodiment, the buffer layer adopts an AlN buffer layer, the channel layer adopts a GaN channel layer, the barrier layer adopts an AlGaN barrier layer, and the cap layer adopts a GaN cap layer. During processing, the carrier 21 rises and moves to the first reaction zone 12. At this time, the distance between the carrier 21 and the spray device 4 is 60mm. The first reaction zone 12 is heated to 1300°C, which is the best generation condition for the polarization layer. The spray device 4 sprays reactants to grow an AlN buffer layer on the surface of the drift layer. The thickness of the AlN buffer layer is about 50nm; a 300nm GaN channel layer is grown on the surface of the AlN buffer layer; a 20nm AlGaN barrier layer is grown on the surface of the GaN channel layer, and the Al component is 25%; finally, a 5nm GaN cap layer is grown on the surface of the AlGaN barrier layer. In other embodiments, the polarization layer may also be nitride such as InN or AlN.

[0063] Preferably, the spray device 4 includes a plurality of first gas channels 43 and a plurality of second gas channels 44, and the first gas channels 43 and the second gas channels 44 respectively spray different reaction gases to the carrier 21; the second gas channel 44 is arranged around the first gas channel 43, and the diameter of the second gas channel 44 is adjustable; the diameter of the second gas channel 44 in step S2 is smaller than the diameter of the second gas channel 44 in step S3. In this embodiment, in step S2, the diameter of the second gas channel 44 is 1 mm, which increases the gas flow velocity of the reaction gas in the second gas channel 44 to ensure that the mixing position of the reaction gas is located in the second reaction zone 13; in step S3, the diameter of the second gas channel 44 is 2 mm, which reduces the gas flow velocity of the reaction gas in the second gas channel 44 to ensure that the mixing position of the reaction gas is located in the first reaction zone 12, thereby improving the processing quality of the transistor.

[0064] Note that the above are only preferred embodiments of the present invention and the technical principles used. Those skilled in the art will understand that the present invention is not limited to the specific embodiments described herein, and that various obvious changes, readjustments and substitutions can be made by those skilled in the art without departing from the scope of protection of the present invention. Therefore, although the present invention has been described in more detail through the above embodiments, the present invention is not limited to the above embodiments, and may include more other equivalent embodiments without departing from the concept of the present invention, and the scope of the present invention is determined by the scope of the appended claims.

Claims

1. A reactor, characterized in that: include: A housing (1) provided with a reaction chamber (11); A lifting device (2), comprising a lifting drive and a carrier plate (21), wherein the lifting drive is arranged at the bottom of the reaction chamber (11), and the lifting drive is drivingly connected to the carrier plate (21) so as to enable the carrier plate (21) to move up and down between the first reaction zone (12) and the second reaction zone (13); A heating device (3), comprising a first heating element (31) and a second heating element (32), wherein the first heating element (31) is used to heat the first reaction zone (12) to a first preset temperature; and the second heating element (32) is used to heat the second reaction zone (13) to a second preset temperature; the first reaction zone (12) is higher than the second reaction zone (13), and the first preset temperature is lower than the second preset temperature; A spray device (4) is arranged at the top of the reaction chamber (11), and the spray device (4) is used to spray reactants.

2. The reactor according to claim 1, characterized in that The spray device (4) comprises a spray head (41), a plurality of vent holes are evenly arranged on the spray head (41), a pipeline (42) is arranged in the vent hole, a first gas channel (43) is formed between the pipeline (42) and the inner wall of the vent hole, and a second gas channel (44) is arranged in the pipeline (42), the first gas channel (43) is used to spray a first reaction gas, and the second gas channel (44) is used to spray a second reaction gas.

3. The reactor according to claim 2, characterized in that The diameter of the pipeline (42) is adjustable to adjust the ratio of the cross-sectional areas of the first gas channel (43) and the second gas channel (44).

4. The reactor according to claim 3, characterized in that The diameter of the second gas channel (44) is D, the distance between the carrier plate (21) and the spray device (4) is A, and the ratio of D to A is in the range of 0.001-0.

05.

5. The reactor according to claim 1, characterized in that The first heating element (31) and the second heating element (32) are both heated by induction coils.

6. The reactor according to claim 1, characterized in that The heating temperature of the first heating element (31) is in the range of 1000°C to 1300°C; and / or The heating temperature of the second heating element (32) ranges from 1300°C to 1650°C.

7. The reactor according to claim 1, characterized in that When the carrier plate (21) is located in the first reaction zone (12), the distance between the carrier plate (21) and the spray device (4) is 30 mm to 80 mm; and / or When the carrier plate (21) is located in the second reaction zone (13), the distance between the carrier plate (21) and the spray device (4) is 150 mm-200 mm.

8. A transistor processing process, characterized in that: Using the reactor as described in any one of claims 1 to 7, the transistor processing process comprises the following steps: S1, placing a substrate on a carrier plate (21); S2, the carrier (21) moves to the second reaction zone (13), the spray device (4) sprays the reactants, the second heating element (32) heats the second reaction zone (13) to a second preset temperature, and the reactants are deposited on the surface of the substrate to form a drift layer; S3, the carrier (21) moves to the first reaction zone (12), the spray device (4) sprays the reactants, the first heating element (31) heats the first reaction zone (12) to a first preset temperature, and the reactants are deposited on the surface of the drift layer to form a polarization layer.

9. The transistor processing process according to claim 8, characterized in that: The spray device (4) comprises a plurality of first gas channels (43) and a plurality of second gas channels (44), wherein the first gas channels (43) and the second gas channels (44) respectively spray different reaction gases toward the carrier plate (21); the second gas channels (44) are arranged around the first gas channels (43), and the diameter of the second gas channels (44) is adjustable; The diameter of the second gas channel (44) in the step S2 is smaller than the diameter of the second gas channel (44) in the step S3.

10. The transistor processing process according to claim 8, characterized in that: The polarization layer includes a buffer layer, a channel layer, a barrier layer and a cap layer in sequence along a direction away from the drift layer; In the step S3, the buffer layer, the channel layer, the barrier layer and the cap layer are formed in sequence.

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