Silicate glass powder for semiconductor passivation packaging and preparation method thereof

Abstract

The invention discloses silicate glass powder for passivating and packaging a semiconductor. The silicate glass powder is prepared from the following components in parts by weight: 40 to 60 parts of silicon dioxide, 5 to 20 parts of aluminum oxide, 20 to 30 parts of lead oxide, 10 to 25 parts of lanthanum oxide, 5 to 15 parts of barium oxide, 10 to 20 parts of silicon nitride, 10 to 20 parts of titanium dioxide and 5 to 15 parts of poly-p-phenylene terephthamide. The heat resistance and mechanical properties of the glass powder are improved, and the comprehensive properties of the glass powder are improved.

Description

Technical Field

[0001] The invention relates to the technical field of glass powder preparation, and in particular to silicate glass powder for semiconductor passivation packaging and a preparation method thereof. Background Art

[0002] The surface of semiconductor devices is relatively sensitive and easily affected by the surrounding environment, which can change their electrical properties and stability, thus affecting their performance. Since the surface of semiconductors is easily affected by the external atmosphere, in order to maintain their electrical properties and enable them to work stably for a long time, it is necessary to protect the surface of semiconductor devices.

[0003] The traditional process is to vapor-deposit a passivation film on the surface of the semiconductor device for protection. However, for the mesa structure, high voltage, and high power semiconductor products, the vapor-deposited film protection is easily broken down by high voltage, with poor stability and poor protection effect. At present, glass powder is used for surface passivation packaging of semiconductor devices. Glass powder has high reverse breakdown voltage, mechanical strength and thermal shock resistance. However, the existing glass powder for semiconductor passivation packaging cannot effectively improve the weather resistance of the passivation packaging material, and cannot effectively resist light and cold and heat performance.

[0004] Chinese patent CN2009100406724 discloses a lead-silicon-aluminum glass powder for semiconductor passivation packaging and a preparation method thereof. The lead-silicon-aluminum glass powder has good chemical stability and electrical performance passivation effect, but has the following disadvantages: poor weather resistance and poor overall performance.

[0005] Therefore, it is necessary to develop a silicate glass powder for semiconductor passivation packaging with good comprehensive performance. Summary of the invention

[0006] The technical problem to be solved by the present invention is to provide a silicate glass powder for semiconductor passivation packaging, improve the heat resistance and mechanical properties of the glass powder, and improve the comprehensive performance of the glass powder.

[0007] In order to solve the above technical problems, the present invention adopts the following technical solution: a silicate glass powder for semiconductor passivation packaging, comprising the following components in parts by weight: 40-60 parts of silicon dioxide, 5-20 parts of aluminum oxide, 20-30 parts of lead oxide, 10-25 parts of lanthanum oxide, 5-15 parts of barium oxide, 10-20 parts of silicon nitride, 10-20 parts of titanium dioxide and 5-15 parts of poly(p-phenylene terephthalamide).

[0008] Poly(p-phenylene terephthalamide) (PPTA) is a high-performance polymer with high strength, high modulus, chemical resistance and other characteristics. Adding PPTA to the passivation packaging glass powder can improve the performance of the material, such as improving the heat resistance, mechanical strength and chemical stability of the material. In addition, the addition of PPTA can also improve the processing performance of the material, making it easier to form and process, thereby meeting specific packaging requirements.

[0009] Furthermore, 5-15 parts of sepiolite powder are included.

[0010] The addition of sepiolite powder can improve the fire resistance and weather resistance of the material, making it more suitable for use in harsh environments. The addition of sepiolite powder has a positive significance for improving the performance of passivation encapsulation glass powder, especially in application scenarios where it is necessary to improve thermal insulation, fire resistance and other performance. The addition of sepiolite powder can significantly improve the comprehensive performance of the material.

[0011] Furthermore, it also includes 2-5 parts of a moisture and heat resistant system; the moisture and heat resistant system includes the following components in parts by weight: 3-chloropropylene and fluororubber raw rubber.

[0012] The present invention adds a moisture and heat resistant system to the passivation packaging glass powder to enhance its stability and durability in a moist and hot environment, thereby improving the overall performance and service life of the semiconductor device. This addition can not only improve the chemical stability of the material, but also improve its mechanical properties and electrical insulation properties to a certain extent, ensuring that the semiconductor device can still work reliably under complex and changeable environmental conditions.

[0013] Furthermore, the mass ratio of the 3-chloropropylene to the fluororubber raw rubber is 1:5-20.

[0014] The present invention also provides a method for preparing silicate glass powder for semiconductor passivation packaging, comprising the following steps: (1) melting silicon dioxide, aluminum oxide, lead oxide, lanthanum oxide, barium oxide, silicon nitride and titanium dioxide at high temperature; (2) After heating poly(p-phenylene terephthalamide) to 300-450° C., add the mixture to step (2) and continue stirring to mix evenly; (3) cooling, annealing, and screening the raw material obtained in step (2) to obtain glass powder particles; (4) The glass powder particles of step (3) are mixed with zirconium oxide ceramic grinding balls, solvents and additives to obtain grinding slurry, which is ball-milled and then spray-dried to obtain silicate glass powder for semiconductor passivation packaging.

[0015] Furthermore, sepiolite powder is added to the raw materials in step (1).

[0016] Furthermore, the melt after step (2) is uniformly cooled to 200-250° C., and then the moisture and heat resistant system components are added and stirred evenly.

[0017] Furthermore, the solvent in step (4) is ethanol, and the mass of the solvent is 15-25% of the mass of the glass powder particles.

[0018] Furthermore, the additive in step (4) is polyvinyl pyrrolidone; and the mass of the solvent is 0.1-0.3% of the mass of the glass powder particles.

[0019] Furthermore, the mass of the zirconia ceramic grinding balls in step (4) is 40-60% of the mass of the glass powder particles.

[0020] The beneficial effects of the present invention are: 1) Poly(p-phenylene terephthalamide) (PPTA) is added to the silicate glass powder for semiconductor passivation packaging of the present invention. PPTA is added to the passivation packaging glass powder to improve the heat resistance, mechanical strength and chemical stability of the silicate glass powder, improve the processing performance of the material, make it easier to shape and process, thereby meeting specific packaging requirements.

[0021] 2) The sepiolite powder added in the present invention improves the heat insulation, fire resistance and other properties of the glass powder, and the addition of the sepiolite powder significantly improves the comprehensive properties of the material.

[0022] 3) Adding a moisture and heat resistant system to the passivation packaging glass powder of the present invention can enhance its stability and durability in a moist and hot environment, thereby improving the overall performance and service life of the semiconductor device. DETAILED DESCRIPTION

[0023] The technical solution of the present invention will be clearly and completely described below through specific implementation methods.

[0024] The silicate glass powder for semiconductor passivation packaging of the present invention comprises the following components in parts by weight: 40-60 parts of silicon dioxide, 5-20 parts of aluminum oxide, 20-30 parts of lead oxide, 10-25 parts of lanthanum oxide, 5-15 parts of barium oxide, 10-20 parts of silicon nitride, 10-20 parts of titanium dioxide and 5-15 parts of poly(p-phenylene terephthalamide). Example 1

[0025] A silicate glass powder for semiconductor passivation packaging of the present embodiment includes the following components in parts by weight: 40 parts of silicon dioxide, 5 parts of aluminum oxide, 20 parts of lead oxide, 10 parts of lanthanum oxide, 5 parts of barium oxide, 10 parts of silicon nitride, 10 parts of titanium dioxide and 5 parts of poly(p-phenylene terephthalamide).

[0026] In this embodiment, a method for preparing a silicate glass powder for semiconductor passivation packaging includes the following steps: (1) melting silicon dioxide, aluminum oxide, lead oxide, lanthanum oxide, barium oxide, silicon nitride and titanium dioxide at high temperature; (2) After heating poly(p-phenylene terephthalamide) to 300° C., add the mixture to step (2), continue stirring, and mix evenly; (3) cooling, annealing, and screening the raw material obtained in step (2) to obtain glass powder particles; (4) The glass powder particles of step (3) are mixed with zirconium oxide ceramic grinding balls, solvents and additives to obtain grinding slurry, which is ball-milled and then spray-dried to obtain silicate glass powder for semiconductor passivation packaging. The solvent used is ethanol, and the mass of the solvent is 15% of the mass of the glass powder particles. The additive used is polyvinyl pyrrolidone; the mass of the solvent is 0.1% of the mass of the glass powder particles. The mass of the zirconium oxide ceramic grinding balls is 40% of the mass of the glass powder particles. Example 2

[0027] A silicate glass powder for semiconductor passivation packaging comprises the following components in parts by weight: 50 parts of silicon dioxide, 14 parts of aluminum oxide, 25 parts of lead oxide, 18 parts of lanthanum oxide, 9 parts of barium oxide, 14 parts of silicon nitride, 15 parts of titanium dioxide and 9 parts of poly(p-phenylene terephthalamide).

[0028] In this embodiment, a method for preparing a silicate glass powder for semiconductor passivation packaging includes the following steps: (1) melting silicon dioxide, aluminum oxide, lead oxide, lanthanum oxide, barium oxide, silicon nitride and titanium dioxide at high temperature; (2) After heating poly(p-phenylene terephthalamide) to 400° C., add the mixture to step (2), continue stirring, and mix evenly; (3) cooling, annealing, and screening the raw material obtained in step (2) to obtain glass powder particles; (4) The glass powder particles of step (3) are mixed with zirconium oxide ceramic grinding balls, solvents and additives to obtain grinding slurry, which is ball-milled and then spray-dried to obtain silicate glass powder for semiconductor passivation packaging. The solvent used is ethanol, and the mass of the solvent is 20% of the mass of the glass powder particles. The additive used is polyvinyl pyrrolidone; the mass of the solvent is 0.2% of the mass of the glass powder particles. The mass of the zirconium oxide ceramic grinding balls is 50% of the mass of the glass powder particles. Example 3

[0029] A silicate glass powder for semiconductor passivation packaging of the present embodiment includes the following components in parts by weight: 60 parts of silicon dioxide, 20 parts of aluminum oxide, 30 parts of lead oxide, 25 parts of lanthanum oxide, 15 parts of barium oxide, 20 parts of silicon nitride, 20 parts of titanium dioxide and 15 parts of poly(p-phenylene terephthalamide).

[0030] In this embodiment, a method for preparing a silicate glass powder for semiconductor passivation packaging includes the following steps: (1) Smelting silicon dioxide, aluminum oxide, lead oxide, lanthanum oxide, barium oxide, silicon nitride and titanium dioxide at high temperature; (2) After heating poly(p-phenylene terephthalamide) to 450° C., add the poly(p-phenylene terephthalamide) to step (2), continue stirring, and mix evenly; (3) cooling, annealing, and screening the raw material obtained in step (2) to obtain glass powder particles; (4) The glass powder particles of step (3) are mixed with zirconium oxide ceramic grinding balls, solvents and additives to obtain grinding slurry, which is ball-milled and then spray-dried to obtain silicate glass powder for semiconductor passivation packaging. The solvent used is ethanol, and the mass of the solvent is 25% of the mass of the glass powder particles. The additive used is polyvinyl pyrrolidone; the mass of the solvent is 0.3% of the mass of the glass powder particles. The mass of the zirconium oxide ceramic grinding balls is 60% of the mass of the glass powder particles. Example 4

[0031] The silicate glass powder for semiconductor passivation packaging of the present embodiment includes the following components in parts by weight: 40-60 parts of silicon dioxide, 5-20 parts of aluminum oxide, 20-30 parts of lead oxide, 10-25 parts of lanthanum oxide, 5-15 parts of barium oxide, 10-20 parts of silicon nitride, 10-20 parts of titanium dioxide, 5-15 parts of poly(p-phenylene terephthalamide), and 10 parts of sepiolite powder.

[0032] In this embodiment, a method for preparing a silicate glass powder for semiconductor passivation packaging includes the following steps: (1) melting silicon dioxide, aluminum oxide, lead oxide, lanthanum oxide, barium oxide, silicon nitride, titanium dioxide and sepiolite powder at high temperature; (2) After heating poly(p-phenylene terephthalamide) to 300-450° C., add the mixture to step (2) and continue stirring to mix evenly; (3) cooling, annealing, and screening the raw material obtained in step (2) to obtain glass powder particles; (4) The glass powder particles of step (3) are mixed with zirconium oxide ceramic grinding balls, solvents and additives to obtain grinding slurry, which is ball-milled and then spray-dried to obtain silicate glass powder for semiconductor passivation packaging. The solvent used is ethanol, and the mass of the solvent is 15-25% of the mass of the glass powder particles. The additive used is polyvinyl pyrrolidone; the mass of the solvent is 0.1-0.3% of the mass of the glass powder particles. The mass of the zirconium oxide ceramic grinding balls is 40-60% of the mass of the glass powder particles. Example 5

[0033] A silicate glass powder for semiconductor passivation packaging of the present embodiment includes the following components in parts by weight: 42 parts of silicon dioxide, 15 parts of aluminum oxide, 22 parts of lead oxide, 14 parts of lanthanum oxide, 13 parts of barium oxide, 11 parts of silicon nitride, 16 parts of titanium dioxide, 10 parts of poly(p-phenylene terephthalamide) and 2 parts of moisture-heat resistant system.

[0034] The moisture and heat resistant system includes the following components in parts by weight: 3-chloropropylene and fluororubber raw rubber. The mass ratio of 3-chloropropylene to fluororubber raw rubber is 1:5.

[0035] In this embodiment, a method for preparing a silicate glass powder for semiconductor passivation packaging includes the following steps: (1) melting silicon dioxide, aluminum oxide, lead oxide, lanthanum oxide, barium oxide, silicon nitride and titanium dioxide at high temperature; (2) After heating poly(p-phenylene terephthalamide) to 380° C., add the mixture to step (2) and continue stirring to mix evenly; (3) After the melt of step (2) is cooled uniformly to 220°C, the moisture and heat resistant system components are added and stirred evenly; (4) cooling, annealing, and screening the raw material obtained in step (3) to obtain glass powder particles; (5) The glass powder particles of step (4) are mixed with zirconium oxide ceramic grinding balls, solvents and additives to obtain grinding slurry, which is ball-milled and then spray-dried to obtain silicate glass powder for semiconductor passivation packaging. The solvent used is ethanol, and the mass of the solvent is 18% of the mass of the glass powder particles. The additive used is polyvinyl pyrrolidone; the mass of the solvent is 0.15% of the mass of the glass powder particles. The mass of the zirconium oxide ceramic grinding balls is 42% of the mass of the glass powder particles. Example 6

[0036] A silicate glass powder for semiconductor passivation packaging of the present embodiment includes the following components in parts by weight: 55 parts of silicon dioxide, 18 parts of aluminum oxide, 28 parts of lead oxide, 22 parts of lanthanum oxide, 8 parts of barium oxide, 12 parts of silicon nitride, 18 parts of titanium dioxide, 8 parts of poly(p-phenylene terephthalamide), 5 parts of sepiolite powder and 5 parts of moisture-heat resistant system.

[0037] The moisture and heat resistant system includes the following components in parts by weight: 3-chloropropylene and fluororubber raw rubber. The mass ratio of 3-chloropropylene to fluororubber raw rubber is 1:20.

[0038] In this embodiment, a method for preparing a silicate glass powder for semiconductor passivation packaging includes the following steps: (1) melting silicon dioxide, aluminum oxide, lead oxide, lanthanum oxide, barium oxide, silicon nitride, titanium dioxide and sepiolite powder at high temperature; (2) After heating poly(p-phenylene terephthalamide) to 400° C., add the mixture to step (2), continue stirring, and mix evenly; (3) After the melt of step (2) is cooled uniformly to 240°C, the moisture and heat resistant system components are added and stirred evenly; (4) cooling, annealing, and screening the raw material obtained in step (3) to obtain glass powder particles; (5) The glass powder particles of step (4) are mixed with zirconium oxide ceramic grinding balls, solvents and additives to obtain grinding slurry, which is ball-milled and then spray-dried to obtain silicate glass powder for semiconductor passivation packaging. The solvent used is ethanol, and the mass of the solvent is 22% of the mass of the glass powder particles. The additive used is polyvinyl pyrrolidone; the mass of the solvent is 0.2% of the mass of the glass powder particles. The mass of the zirconium oxide ceramic grinding balls is 55% of the mass of the glass powder particles.

[0039] The glass powder of the invention has good toughness, high fracture strength, strong weather resistance, and excellent mechanical and electrical properties.

[0040] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Those skilled in the art may make various modifications or equivalent substitutions to the present invention within the essence and protection scope of the present invention, and such modifications or equivalent substitutions should also be deemed to fall within the protection scope of the technical solution of the present invention.

Claims

1. A silicate glass powder for semiconductor passivation packaging, Features: The composition comprises the following components in parts by weight: 40-60 parts of silicon dioxide, 5-20 parts of aluminum oxide, 20-30 parts of lead oxide, 10-25 parts of lanthanum oxide, 5-15 parts of barium oxide, 10-20 parts of silicon nitride, 10-20 parts of titanium dioxide and 5-15 parts of poly(p-phenylene terephthalamide).

2. The silicate glass powder for semiconductor passivation packaging according to claim 1, Features: Also include 5-15 parts of meerschaum powder.

3. The silicate glass powder for semiconductor passivation packaging according to claim 1, Features: It also includes 2-5 parts of a moisture and heat resistant system; the moisture and heat resistant system includes the following components in parts by weight: 3-chloropropylene and fluororubber raw rubber.

4. The silicate glass powder for semiconductor passivation packaging according to claim 3, Features: The mass ratio of 3-chloropropylene to fluororubber raw rubber is 1:5-20.

5. The method for preparing the silicate glass powder for semiconductor passivation packaging according to claim 1, Features: The steps include: (1) melting silicon dioxide, aluminum oxide, lead oxide, lanthanum oxide, barium oxide, silicon nitride and titanium dioxide at high temperature; (2) After heating poly(p-phenylene terephthalamide) to 300-450° C., add the mixture to step (2) and continue stirring to mix evenly; (3) cooling, annealing, and screening the raw material obtained in step (2) to obtain glass powder particles; (4) The glass powder particles of step (3) are mixed with zirconium oxide ceramic grinding balls, solvents and additives to obtain grinding slurry, which is ball-milled and then spray-dried to obtain silicate glass powder for semiconductor passivation packaging.

6. The method for preparing a silicate glass powder for semiconductor passivation packaging according to claim 5, Features: Add sepiolite powder to the raw materials in step (1).

7. The method for preparing a silicate glass powder for semiconductor passivation packaging according to claim 6, Features: The melt after step (2) is cooled uniformly to 200-250°C, and then the moisture and heat resistant system components are added and stirred evenly.

8. The method for preparing a silicate glass powder for semiconductor passivation packaging according to claim 5, Features: The solvent in step (4) is ethanol, and the mass of the solvent is 15-25% of the mass of the glass powder particles.

9. The method for preparing a silicate glass powder for semiconductor passivation packaging according to claim 5, Features: The additive in step (4) is polyvinyl pyrrolidone; the mass of the solvent is 0.1-0.3% of the mass of the glass powder particles.

10. The method for preparing a silicate glass powder for semiconductor passivation packaging according to claim 5, Features: The mass of the zirconium oxide ceramic grinding balls in step (4) is 40-60% of the mass of the glass powder particles.