Magnetron sputtering target for improving utilization rate of target material, control method and magnetron sputtering equipment
By combining the target seat, magnet assembly and detection sensor in the magnetron sputtering target, the magnetic field acts on the uneroded area of the target, the problem of low target usage is solved, and uniform erosion and utilization of the target are achieved. .
Patent Information
- Application Number
- CN202411279140.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-12
- Publication Date
- 2024-12-27
AI Technical Summary
During magnetron sputtering, the usage rate of the target is low, only 10%-40%. Due to the erosion of specific areas of the target, the uneroded part is discarded, resulting in a short life.
Design a magnetron sputtering target including a target base, a magnet assembly and multiple detection sensors, control the magnetic field strength and action area generated by the magnet assembly through a DC power supply, and detect the magnetic field strength of each area of the target through a detection sensor to determine the magnetic field In the weaker target area, adjust the voltage value of the magnet assembly to make the target erode evenly.
It improves the usage rate and use cycle of the target material, realizes uniform utilization of the target material, and extends the service life of the target material.
Smart Images
Figure CN119194383A_ABST
Abstract
Description
Technical Field
[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a magnetron sputtering target and a control method and a magnetron sputtering device for improving target material utilization. Background Art
[0002] In semiconductor processes, PVD (Physical Vapor Deposition) technology is widely used to deposit various materials, including metals (such as Al, Cu), metal alloys, and some specific compound materials (such as compounds containing Ta, Ni, Cr, Ti, Ca, etc.). The PVD deposition process involves three basic steps: evaporation, transport, and deposition. First, the target material is heated by electron beam, thermal evaporation, or other means to evaporate its atoms or molecules into a vapor state; then, these vapor substances are transported to the substrate surface in a vacuum environment; finally, when the vapor substances contact the substrate surface, they condense to form a thin film.
[0003] In the PVD deposition process, sputtering of a specific area can be achieved by adjusting the magnetic field. This technology is called magnetron sputtering, which uses a magnetic field to control ions to bombard a solid target, generate high-energy ions and release them onto the target surface. Magnetron sputtering has a higher deposition rate and a more uniform film thickness distribution, and is widely used in the preparation of semiconductor devices, optical films and other processes.
[0004] However, according to the characteristics of magnetron sputtering, only a specific area of the target material is sputtered, so erosion occurs in the specific area of the target material. The uneroded part is often no longer used and will be discarded. Therefore, the amount of target erosion determines the utilization rate and service life of the target material. In the prior art, the erosion amount of the target material, that is, the usage amount, often only accounts for 10%-40% of the total usage, resulting in a low utilization rate and a short life of the target material.
[0005] It should be noted that the above statements are only used to provide background technical information related to the present application and do not necessarily constitute prior art. Summary of the invention
[0006] The present application proposes a magnetron sputtering target for improving target material utilization, a control method thereof, and a magnetron sputtering device. The magnetron sputtering target for improving target material utilization can effectively improve the utilization rate and service life of the target material.
[0007] The first embodiment of the present application provides a magnetron sputtering target for improving target material utilization, comprising: a target holder, a magnet assembly, and a plurality of detection sensors;
[0008] The target base is provided with a fixing device for fixing the target material; the magnet assembly is arranged inside the target base and connected to a DC power supply, and the DC power supply is used to control the magnetic field strength and magnetic field action area generated by the magnet assembly;
[0009] The multiple detection sensors are dispersedly arranged on the same plane of the target seat away from the target material, and are used to detect the magnetic field intensity of various parts of the target material.
[0010] In some optional embodiments of the present application, the plurality of detection sensors are arranged along the length direction of the target material, and each of the detection sensors detects the magnetic field strength of a region of the target material.
[0011] In some optional embodiments of the present application, the detection sensor located at the edge among the plurality of detection sensors has an orthographic projection on the target material that coincides with the edge of the target material.
[0012] In some optional embodiments of the present application, the detection sensors are all non-contact sensors.
[0013] In some optional embodiments of the present application, the plurality of detection sensors are evenly arranged on a surface of the target base away from the target material.
[0014] In some optional embodiments of the present application, the distance between the detection sensor and the target material is 0.01 mm-900 mm.
[0015] An embodiment of the second aspect of the present application provides a magnetron sputtering device, including the magnetron sputtering target for improving target material utilization as described in the first aspect.
[0016] In some optional embodiments of the present application, the magnetron sputtering device also includes a wafer heating system
[0017] An embodiment of the third aspect of the present application provides a method for controlling a magnetron sputtering target, which is applied to the magnetron sputtering target described in the first aspect, or the magnetron sputtering device described in the second aspect, and the method includes:
[0018] Determining a target area of a target material based on the detection values of the plurality of detection sensors, wherein the magnetic field of the target material is the weakest in the target area;
[0019] The voltage value of the DC power supply input to the magnet assembly is controlled so that the magnetic field generated by the magnet assembly acts on the target area.
[0020] In some optional embodiments of the present application, determining a target area of the target material based on the detection values of the multiple detection sensors, where the magnetic field of the target material is the weakest, includes:
[0021] Determining the magnetic field strength of each area of the target material based on the detection values of the multiple detection sensors and the distance between the detection sensors and the top surface of the target material;
[0022] Based on the magnetic field strength of each area of the target material, a target area of the target material is determined.
[0023] The technical solution provided in the embodiments of the present application has at least the following technical effects or advantages:
[0024] The magnetron sputtering target for improving the utilization rate of the target provided by the embodiment of the present application includes a target seat, a magnet assembly and a plurality of detection sensors, wherein the target seat is provided with a fixing device for fixing the target; the magnet assembly is arranged inside the target seat and connected to a DC power supply, and the DC power supply is used to control the magnetic field strength and magnetic field action area generated by the magnet assembly; the plurality of detection sensors are dispersedly arranged on the same plane of the target seat away from the target side, and are used to detect the magnetic field strength of each part of the target. Based on the magnetron sputtering target, the magnitude and action range of the magnetic field generated by the magnet assembly can be adjusted and controlled by the DC power supply, and the magnetic field strength of each area of the target can also be detected by the detection sensor. Then, during the magnetron sputtering process, the target area with a weaker magnetic field can be determined by obtaining the detection value of the detection sensor, that is, the target area that needs to be bombarded by the plasma, and then the magnitude and action range of the magnetic field generated by the magnet assembly can be adjusted by changing the voltage value of the DC power supply intervening the magnet assembly, so that the magnetic field generated by the magnet assembly can act on the target area, and then the target area of the target can be eroded, thereby realizing the uniform use of the target, and then improving the utilization rate and use cycle of the target. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] By reading the detailed description of the preferred embodiment below, various other advantages and benefits will become clear to those of ordinary skill in the art. The accompanying drawings are only used for the purpose of illustrating the preferred embodiment and are not considered to be limitations of the present application. In addition, the same reference symbols are used to represent the same components throughout the accompanying drawings.
[0026] In the attached picture:
[0027] Figure 1 A schematic structural diagram of a magnetron sputtering target for improving target material utilization provided by an embodiment of the present application is shown;
[0028] Figure 2 A schematic structural diagram of a magnetron sputtering device provided in an embodiment of the present application is shown;
[0029] Figure 3 A schematic flow chart of a method for controlling a magnetron sputtering target provided in one embodiment of the present application is shown;
[0030] Figure 4A specific flow chart of step S1 in the method for controlling a magnetron sputtering target provided in one embodiment of the present application is shown. DETAILED DESCRIPTION
[0031] The exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the accompanying drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided in order to enable a more thorough understanding of the present application and to fully convey the scope of the present application to those skilled in the art.
[0032] It should be noted that, unless otherwise specified, the technical terms or scientific terms used in this application should have the common meanings understood by technicians in the field to which this application belongs.
[0033] In the related art, due to the characteristics of magnetron sputtering, during the magnetron sputtering process, only specific areas of the target material are often sputtered, so there is a phenomenon of erosion of specific areas of the target material, that is, only the characteristic areas of the target material are bombarded by plasma to produce high-energy particles. The uneroded part, that is, the part that is not bombarded by plasma is often no longer used and will be discarded, so the amount of target material erosion determines the utilization rate and service life of the target material. In the prior art, the erosion amount of the target material, that is, the usage amount, often only accounts for 10%-40% of the total usage, which makes the utilization rate of the target material low and the life short.
[0034] In order to improve the utilization rate and service life of the target material, this embodiment studies the magnetron sputtering target and related control methods for magnetron sputtering, and finds that by changing the force and position of the magnetic field, the plasma can be guided to the uncorroded part of the target material, thereby increasing the utilization rate and service life of the target material.
[0035] Based on the above findings, the embodiments of the present application provide a magnetron sputtering target and a control method of a magnetron sputtering device for improving the utilization rate of target materials. The magnetron sputtering target for improving the utilization rate of target materials includes a target seat, a magnet assembly, and a plurality of detection sensors. The target seat is provided with a fixing device for fixing the target material; the magnet assembly is arranged inside the target seat and connected to a DC power supply, and the DC power supply is used to control the magnetic field strength and magnetic field action area generated by the magnet assembly; the plurality of detection sensors are dispersedly arranged on the same plane of the target seat away from the target material side, and are used to detect the magnetic field strength of various parts of the target material. Based on the magnetron sputtering target, the size and range of the magnetic field generated by the magnet assembly can be adjusted and controlled by a DC power supply, and the magnetic field strength of various regions of the target material can also be detected by a detection sensor. Then, during the magnetron sputtering process, the target area with a weaker magnetic field, that is, the target area that needs to be bombarded by plasma can be determined by obtaining the detection value of the detection sensor. Then, the size and range of the magnetic field generated by the magnet assembly can be adjusted by changing the voltage value of the DC power supply intervening in the magnet assembly, so that the magnetic field generated by the magnet assembly can act on the target area, and then the target area of the target material can be eroded, thereby achieving uniform use of the target material and then improving the utilization rate and use cycle of the target material.
[0036] The magnetron sputtering device is any magnetron sputtering device including the above-mentioned magnetron sputtering target that can improve the utilization rate of the target material, and this embodiment does not specifically limit its specific structure.
[0037] The embodiments of the present application are described in detail below with reference to the accompanying drawings.
[0038] Embodiment 1
[0039] Please refer to Figure 1 , is a schematic diagram of a structure of a magnetron sputtering target for improving target material utilization provided in an embodiment of the present application, as shown in the attached Figure 1 As shown, a magnetron sputtering target for improving target material utilization rate comprises: a target seat, a magnet assembly and a plurality of detection sensors; the target seat is provided with a fixing device for fixing the target material; the magnet assembly is arranged inside the target seat and connected to a DC power supply, and the DC power supply is used to control the magnetic field strength and magnetic field action area generated by the magnet assembly; the plurality of detection sensors are dispersedly arranged on the same plane of the target seat away from the target material side, and are used to detect the magnetic field strength of various parts of the target material.
[0040] The magnetron sputtering target for improving the utilization rate of the target material provided in this embodiment is started by a DC power supply, and the size of the magnetic field and the range of action generated by the magnet assembly can be adjusted and controlled by the voltage value of the DC power supply. It also includes a detection sensor for detecting the magnetic field strength of each area of the target material. Then, during the magnetron sputtering process, the target area with a weaker magnetic field, that is, the target area that needs to be bombarded by plasma can be determined by obtaining the detection value of the detection sensor while performing magnetron sputtering, and then the size of the magnetic field and the range of action generated by the magnet assembly can be adjusted by changing the voltage value of the DC power supply intervening in the magnet assembly, so that the magnetic field generated by the magnet assembly can act on the target area, and then the target area of the target material can be eroded, thereby achieving uniform use of the target material, and then improving the utilization rate and service life of the target material.
[0041] For the magnet assembly, it may include Figure 1 The two groups shown may also include more groups, which is not specifically limited in this embodiment. Specifically, the magnet assembly can be placed on the back of the target material, and the magnetic field generated by them passes through the surface of the target material to form a magnetic field. The magnetic field is combined with the electric field perpendicular to the target surface to form a drift field of the electric field and the magnetic field. The drift field has the effect of a trap for electrons, which increases the electron density near the target surface, thereby increasing the probability of collision between electrons and gas molecules, enhancing the ionization rate of the gas, and increasing the sputtering rate. The arrangement of the magnets in the magnet assembly will affect the distribution of the magnetic field, and then affect the distribution of the plasma on the target surface. For example, in a planar magnetron sputtering target, the magnets are usually arranged in a manner that the polarities of adjacent magnets are opposite (i.e., NSN or SNS) to form a magnetic field that is approximately parallel to the target surface. This arrangement can enhance the sputtering of a specific area of the target surface, but the utilization rate of the target material is usually low because the plasma is mainly confined to a local area of the target surface.
[0042] It can be understood that the magnetron sputtering target for improving target material utilization provided in this embodiment, in addition to the above-mentioned target holder, magnet assembly and sensor, can also include any components on the magnetron sputtering target, such as a cavity, a target material fixing device, and a magnet fixing assembly, etc. This embodiment does not make specific limitations on this.
[0043] In some optional embodiments, since the target material can be set in a long strip shape, the multiple detection sensors are arranged along the length direction of the target material, and each detection sensor detects the magnetic field strength of a region of the target material. In this way, the detection areas of the multiple detection sensors can cover the entire target material, thereby accurately detecting the magnetic field strength of each region of the target material, and then the target material can be used more evenly.
[0044] It can be understood that the plurality of detection sensors are arranged along the length direction of the target material, and the positions of the plurality of detection sensors can be on a straight line, such as Figure 1 As shown. They can also be arranged slightly staggered, as long as the magnetic field strength in different areas along the length direction can be detected.
[0045] Specifically, the detection sensor located at the edge of the plurality of detection sensors has its orthographic projection on the target material coincident with the edge of the target material. In this way, it can be ensured that the detection sensor can detect the thickness at the edge of the target material, avoiding the phenomenon of high utilization rate in the middle and low utilization rate at the edge. This can further improve the utilization rate of the target material and the service life of the target material.
[0046] Furthermore, the plurality of detection sensors may be evenly arranged on the surface of the target holder away from the target material, so that the magnetic field strength of each area of the target material may be detected more accurately.
[0047] In some other optional embodiments, the detection sensors may all be non-contact sensors.
[0048] Non-contact sensor technology, such as the Hall Effect sensor, can measure the magnetic field strength without touching the target object, thus achieving precise control of the magnetic field. In the PVD (Physical Vapor Deposition) deposition process, by adjusting the current or voltage value of the magnet power supply, the strength of the magnetic field can be changed, thereby achieving precise treatment of the erosion formation site during the sputtering process.
[0049] Specifically, the distance between the detection sensor and the target material is 0.01 mm-900 mm, so as to adapt to magnetron sputtering targets with more structures and improve the universal performance of the magnetron sputtering target.
[0050] It can be understood that the process description of forming a magnetron sputtering target for improving target material utilization in this embodiment is for illustrative purposes only, and this embodiment does not specifically limit the specific process for forming the above-mentioned magnetron sputtering target for improving target material utilization, as long as the above-mentioned magnetron sputtering target for improving target material utilization can be achieved.
[0051] Embodiment 2
[0052] Based on the same concept of the above-mentioned magnetron sputtering target for improving target material utilization, this embodiment also provides a magnetron sputtering device, including the magnetron sputtering target for improving target material utilization of any of the above-mentioned embodiments.
[0053] The magnetron sputtering device provided in this embodiment includes the above-mentioned magnetron sputtering target for improving target material utilization, so it can at least achieve the beneficial effects that can be achieved by the above-mentioned magnetron sputtering target for improving target material utilization, and any of the above-mentioned implementation modes can be applied to the magnetron sputtering device provided in this embodiment, which will not be repeated here.
[0054] In some other optional embodiments, Figure 2 As shown, the magnetron sputtering equipment may also include a wafer heating system to achieve the function of heating the wafer and improve the efficiency and effect of magnetron sputtering.
[0055] Embodiment 3
[0056] Based on the same concept of the magnetron sputtering target for improving the utilization rate of the target material, this embodiment also provides a control method for the magnetron sputtering target, which can be applied to the magnetron sputtering target or magnetron sputtering device for improving the utilization rate of the target material provided in the above embodiment, such as the attached Figure 3 As shown, the control method of the magnetron sputtering target includes the following steps:
[0057] Step S1, determining a target area of a target material based on the detection values of the plurality of detection sensors, wherein the magnetic field of the target material in the target area is the weakest;
[0058] Step S2, controlling the voltage value of the DC power supply input to the magnet assembly so that the magnetic field generated by the magnet assembly acts on the target area.
[0059] Specifically, the specific process of the magnetron sputtering target control method is as follows: Place the wafer in the sputtering chamber, and evacuate the sputtering chamber to obtain a high vacuum environment to reduce gas interference during the sputtering process. Then select a high-purity metal as the sputtering target, and then introduce the reaction gas into the sputtering chamber. Then, a DC power supply can be applied to generate a magnetic field. The target material is continuously sputtered under the action of the magnetic field, and high-energy particles fly out from the surface of the target material, combine with the reaction gas to generate corresponding compounds, and deposit on the wafer. As the sputtering process proceeds, a thin film is gradually formed. During the sputtering process, based on the multiple detection sensors, such as Figure 1 The sensors S1-S8 are detected, and their detection values are obtained to determine the target area of the target material, that is, the magnetic field of the target material in the target area is the weakest, such as Figure 1 Then, the voltage value of the DC power supply input to the magnet assembly is controlled so that the magnetic field generated by the magnet assembly acts on the target area, thereby eroding the target area of the target material, thereby achieving uniform use of the target material, and then improving the use rate and use cycle of the target material.
[0060] It can be understood that the magnetron sputtering process may also include but is not limited to processes such as wafer cleaning and wafer heating. This embodiment does not specifically limit the specific process as long as the above-mentioned magnetron sputtering control method can be implemented.
[0061] In some optional embodiments, such as Figure 4As shown, the above-mentioned step S1, i.e., determining the target area of the target material based on the detection values of the multiple detection sensors, where the magnetic field of the target material is the weakest in the target area, may specifically include the following processing: step S11, determining the magnetic field strength of each area of the target material based on the detection values of the multiple detection sensors and the distance between the detection sensors and the top surface of the target material; step S12, determining the target area of the target material based on the magnetic field strength of each area of the target material, where the magnetic field of the target material is the weakest in the target area.
[0062] Specifically, the magnetic field can be precisely regulated by closed-loop control of the magnetic field using the PID (proportional-integral-differential) algorithm. The PID controller automatically adjusts the magnet power output based on the magnetic field value obtained by the Hall sensor as feedback to achieve stable control of the magnetic field. This control method can effectively reduce magnetic field offset and improve the stability and uniformity of the deposition process.
[0063] It should be noted that the various steps of the above-mentioned control method are only specific descriptions of this embodiment, and this embodiment is not limited thereto, and the control method provided in this embodiment is not limited to only including these steps. As long as the magnetron sputtering steps include the above-mentioned steps, they belong to the protection scope of this embodiment.
[0064] The control method of the magnetron sputtering target for improving the utilization rate of the target material provided in this embodiment can obtain the detection values of the multiple detection sensors based on the multiple detection sensors, determine the target area of the target material, and the magnetic field of the target material in the target area is the weakest. Then, the voltage value of the DC power supply input to the magnet assembly is controlled so that the magnetic field generated by the magnet assembly acts on the target area, so that the target area of the target material can be eroded, thereby achieving uniform use of the target material, and then improving the utilization rate and service life of the target material.
[0065] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them; although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein by equivalents; and these modifications or replacements do not make the essence of the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application, and they should all be included in the scope of the claims and specification of the present application. In particular, as long as there is no structural conflict, the various technical features mentioned in the various embodiments can be combined in any way. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions that fall within the scope of the claims.
Claims
1. A magnetron sputtering target for improving target material utilization, characterized in that: include: A target holder, a magnet assembly and a plurality of detection sensors; The target base is provided with a fixing device for fixing the target material; the magnet assembly is arranged inside the target base and connected to a DC power supply, and the DC power supply is used to control the magnetic field strength and magnetic field action area generated by the magnet assembly; The multiple detection sensors are dispersedly arranged on the same plane of the target seat away from the target material, and are used to detect the magnetic field intensity of various parts of the target material.
2. The magnetron sputtering target according to claim 1, characterized in that The plurality of detection sensors are arranged along the length direction of the target material, and each of the detection sensors detects the magnetic field intensity of a region of the target material.
3. The magnetron sputtering target according to claim 2, characterized in that: The detection sensor located at the edge among the plurality of detection sensors has an orthographic projection on the target material that coincides with the edge of the target material.
4. The magnetron sputtering target according to any one of claims 1 to 3, characterized in that: The detection sensors are all non-contact sensors.
5. The magnetron sputtering target according to any one of claims 1 to 3, characterized in that: The plurality of detection sensors are evenly arranged on the surface of the target base away from the target material.
6. The magnetron sputtering target according to any one of claims 1 to 3, characterized in that: The distance between the detection sensor and the target material is 0.01mm-900mm.
7. A magnetron sputtering device, characterized in that: The invention comprises the magnetron sputtering target for improving the target material utilization rate as described in any one of claims 1 to 6.
8. The magnetron sputtering device according to claim 7, characterized in that: Also included is a wafer heating system.
9. A method for controlling a magnetron sputtering target, characterized in that: Applied to the magnetron sputtering target according to any one of claims 1 to 6, or the magnetron sputtering device according to claim 7 or 8, the method comprises: Determining a target area of a target material based on the detection values of the plurality of detection sensors, wherein the magnetic field of the target material is the weakest in the target area; The voltage value of the DC power supply input to the magnet assembly is controlled so that the magnetic field generated by the magnet assembly acts on the target area.
10. The method for controlling a magnetron sputtering target according to claim 9, wherein: The step of determining a target area of the target material based on the detection values of the plurality of detection sensors, wherein the magnetic field of the target material in the target area is the weakest, comprises: Determining the magnetic field strength of each area of the target material based on the detection values of the multiple detection sensors; Claims Based on the magnetic field strength of each area of the target material, a target area of the target material is determined.