Cleaning fluid

Abstract

The invention discloses a cleaning solution. The raw materials of the cleaning solution comprise the following components in percentage by mass: 0.1-40% of an oxidizing agent, an amine organic matter, a corrosion inhibitor, a chelating agent, a surfactant and the balance of water, and the sum of the mass fractions of all the components is 100%. The amine organic matter is nitrogen alkyl ammonium hydroxide and / or alcohol amine; the chelating agent is one or more of n ethylene m amine, polyethylene polyamine and nitrogen-containing organic acid which are unsubstituted or substituted by one or more C1-C4 alkyl groups; n is an integer from 2 to 10, and m is an integer from 3 to 10; the surface active agent is polyetherimide and / or polyvinyl acetate; the cleaning solution does not contain ammonium fluoride; the cleaning solution does not contain metal ions. Compared with the prior art, the cleaning solution has one or more advantages as follows: the cleaning solution has a better cleaning effect on residues after etching and a better corrosion effect, a TiN hard mask can be selectively removed, and damage to copper or copper alloy and cobalt or cobalt alloy can be inhibited.

Description

Technical Field

[0001] The invention relates to a cleaning liquid. Background Art

[0002] In chip manufacturing technology, the cleaning solution for copper interconnect plasma etching residues is mainly composed of fluorine-containing cleaning solution compositions. With the continuous advancement of technology nodes, more and more materials are introduced, such as metal materials such as cobalt, titanium, tungsten, titanium nitride, and low-k dielectric materials, which in turn poses a challenge to the compatibility of traditional fluorine-containing cleaning solution compositions with various materials.

[0003] Plasma dry etching is commonly used to make vertical sidewall trenches and anisotropic interconnect vias in copper (Cu) / low-k dual-damascene manufacturing processes. As technology nodes evolve to 45nm and smaller (e.g., 28-14nm), the reduction in size of semiconductor devices makes it more challenging to achieve precise profile control of vias and trenches. Integrated circuit manufacturing companies are studying the use of various hard masks to improve the etching selectivity of low-k materials to achieve better profile control. Hard mask materials (such as Ti, TiN, silicon oxynitride or their analogs) need to be removed after playing an etching protection role. In the cleaning process of removing the hard mask material, other metals and dielectric materials need to be protected, which poses a challenge to the compatibility of traditional cleaning solution compositions with a variety of materials.

[0004] Developing a cleaning solution with strong compatibility for selectively removing hard masks has become an urgent problem to be solved in the art. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a cleaning solution in order to overcome the problem of poor compatibility in traditional cleaning solutions. The cleaning solution of the present invention has one or more of the following advantages: better cleaning effect on post-etching residues, better corrosion effect, selective removal of TiN hard mask, and inhibition of damage to copper or copper alloys and cobalt or cobalt alloys.

[0006] The present invention solves the above technical problems through the following technical solutions.

[0007] The present invention provides a cleaning liquid, the raw materials of which include the following components in mass fraction: 0.1-40% of an oxidant, an amine organic matter, a corrosion inhibitor, a chelating agent, a surfactant and water, the water makes up the balance, and the sum of the mass fractions of the components is 100%; the amine organic matter is a nitrogen alkyl ammonium hydroxide and / or an alcohol amine; the chelating agent is one or more of n-ethylene m-amine (single substance) that is unsubstituted or substituted with one or more C1-C4 alkyl groups, polyethylene polyamine (a co-product of ethylenediamine, diethylenetriamine, triethylenetetramine and tetraethylenepentamine) and a nitrogen-containing organic acid; n is an integer of 2-10, and m is an integer of 3-10; the surfactant is polyetherimide and / or polyvinyl acetate; the cleaning liquid does not contain ammonium fluoride; the cleaning liquid does not contain metal ions;

[0008] The mass fraction of each component is the mass percentage of the mass of each component to the total mass of all components in the cleaning solution.

[0009] The pH of the cleaning solution may be 7.5-13.5, preferably 8-12.

[0010] The cleaning solution may not contain one or more of hydrogen fluoride, ammonium fluoride, tetraalkylammonium fluoride, fluoroboric acid and ammonium tetrafluoroborate. The cleaning solution may not contain fluoride.

[0011] In the cleaning solution, the oxidant can be a conventional oxidant in the cleaning solution in the art, preferably one or more of hydrogen peroxide, N-methylmorpholine oxide, benzoyl peroxide, tetrabutylammonium peroxymonosulfate, ozone, ammonium peroxydisulfate, peracetic acid, urea peroxide, nitric acid, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, urea peroxide and peracetic acid, such as hydrogen peroxide.

[0012] In the cleaning solution, the mass fraction of the oxidant is preferably 0.5-30%, such as 25%.

[0013] In the cleaning liquid, in the amine organic matter, the azanyl ammonium hydroxide can be tetramethyl ammonium hydroxide; the alcohol amine can be one or more of monoethanolamine, diethanolamine and triethanolamine, such as monoethanolamine and / or diethanolamine.

[0014] In the cleaning solution, the mass fraction of the amine organic matter can be the conventional mass fraction of cleaning solutions in the art, preferably 0.01-20%, more preferably 0.1-15%, such as 13% or 10%.

[0015] In the cleaning solution, the corrosion inhibitor can be a conventional corrosion inhibitor for cleaning solutions in the art, preferably benzotriazole, toluenetriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole, hydroxybenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole, 3-amino-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 5-benzenethiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole, 5-bromobenzotriazole, 4-bromobenzotriazole, 5-fluorobenzotriazole, 4 One or more of -fluorobenzotriazole, naphthotriazole, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 5-aminotetrazolyl, 5-aminotetrazolyl monohydrate, 5-amino-1,3,4-thiadiazole-2-thiol, 2,4-diamino-6-methyl-1,3,5-triazine, thiazole, triazine, methyltetrazolyl, 1,3-dimethyl-2-imidazolidinone, 1,5-pentamethylenetetrazolyl, 1-phenyl-5-mercaptotetrazolyl, diaminomethyltriazine, imidazolinethione, mercaptobenzimidazole, 4-methyl-4H-1,2,4-triazole-3-thiol, 5-amino-1,3,4-thiadiazole-2-thiol and benzothiazole, such as benzotriazole (BTA).

[0016] In the cleaning solution, the mass fraction of the corrosion inhibitor can be the conventional mass fraction of cleaning solutions in the art, preferably 0.001-5%, more preferably 0.01-3%, such as 0.5%.

[0017] In the cleaning liquid, in the chelating agent, the n-ethylene-m-amine can be diethylenetriamine and / or pentamethyldiethylenetriamine, such as pentamethyldiethylenetriamine; the nitrogen-containing organic acid can be one or more of 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, nitrilotriacetic acid and ethylenediaminetetraacetic acid, such as iminodiacetic acid.

[0018] In the cleaning solution, the mass fraction of the chelating agent can be the conventional mass fraction of cleaning solutions in the art, preferably 0.001%-5%, more preferably 0.01%-3%, such as 1.5%.

[0019] In the cleaning solution, the surfactant may be polyetherimide, the CAS number of the polyetherimide may be 61128-46-9, and the CAS number of the polyvinyl acetate may be 9003-20-7.

[0020] In the cleaning solution, the mass fraction of the surfactant can be the conventional mass fraction of cleaning solutions in the art, preferably 0.001%-5%, more preferably 0.01%-3%, for example 1%.

[0021] In the cleaning solution, the water can be conventional water used in the field of cleaning solutions, preferably one or more of deionized water, distilled water and pure water, such as deionized water.

[0022] In a certain technical implementation scheme, the raw materials of the cleaning solution include the following components in mass fraction:

[0023] The oxidant is hydrogen peroxide;

[0024] The mass fraction of the oxidant is 0.1-40%;

[0025] The amine organic compound is one or more of tetramethylammonium hydroxide, monoethanolamine and diethanolamine;

[0026] The mass fraction of the amine organic matter is 0.01-20%;

[0027] The corrosion inhibitor is benzotriazole;

[0028] The mass fraction of the corrosion inhibitor is 0.001-5%;

[0029] The chelating agent is pentamethyldiethylenetriamine and / or iminodiacetic acid;

[0030] The mass fraction of the chelating agent is 0.001%-5%;

[0031] The surfactant is polyetherimide;

[0032] The mass fraction of the surfactant is 0.001%-5%;

[0033] The water is deionized water, and the deionized water makes up the balance.

[0034] In a certain technical implementation scheme, the raw materials of the cleaning solution include the following components in mass fraction:

[0035] The oxidant is hydrogen peroxide;

[0036] The mass fraction of the oxidant is 25%;

[0037] The amine organic compound is one or more of tetramethylammonium hydroxide, monoethanolamine and diethanolamine;

[0038] The mass fraction of the amine organic matter is 13% or 10%;

[0039] The corrosion inhibitor is benzotriazole;

[0040] The mass fraction of the corrosion inhibitor is 0.5%;

[0041] The chelating agent is pentamethyldiethylenetriamine and / or iminodiacetic acid;

[0042] The mass fraction of the chelating agent is 1.5%;

[0043] The surfactant is polyetherimide;

[0044] The mass fraction of the surfactant is 1%;

[0045] The water is deionized water, and the deionized water makes up the balance.

[0046] In a preferred technical solution, the raw materials of the cleaning solution include any combination of the following components in mass fractions:

[0047] Combination 1: 25% hydrogen peroxide, 13% tetramethylammonium hydroxide, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0048] Combination 2: 25% hydrogen peroxide, 10% tetramethylammonium hydroxide, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0049] Combination 3: 25% hydrogen peroxide, 13% diethanolamine, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0050] Combination 4: 25% hydrogen peroxide, 10% diethanolamine, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0051] Combination 5: 25% hydrogen peroxide, 13% monoethanolamine, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0052] Combination 6: 25% hydrogen peroxide, 10% monoethanolamine, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0053] Combination 7: 25% hydrogen peroxide, 13% tetramethylammonium hydroxide, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0054] Combination 8: 25% hydrogen peroxide, 10% tetramethylammonium hydroxide, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0055] Combination 9: 25% hydrogen peroxide, 13% diethanolamine, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0056] Combination 10: 25% hydrogen peroxide, 10% diethanolamine, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0057] Combination 11: 25% hydrogen peroxide, 13% monoethanolamine, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance;

[0058] Combination 12: 25% hydrogen peroxide, 10% monoethanolamine, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with the balance being made up with deionized water.

[0059] In a certain technical implementation, the raw materials of the cleaning solution are composed of the following components in mass fractions: the above-mentioned oxidant, the above-mentioned amine organic matter, the above-mentioned corrosion inhibitor, the above-mentioned chelating agent, the above-mentioned surfactant and the above-mentioned water, with water making up the balance.

[0060] The components of the present invention can be packaged separately and can be mixed temporarily when used.

[0061] The present invention also provides a kit, which comprises one or more containers, wherein the oxidant, the amine organic matter, the corrosion inhibitor, the chelating agent, the surfactant and the water are placed in one or more containers.

[0062] The present invention also provides a method for preparing the cleaning liquid, which comprises the following steps: mixing the above components to obtain the cleaning liquid.

[0063] The mixing is preferably performed by adding the solid components in the components into the liquid components and stirring them evenly.

[0064] Wherein, the mixing temperature may be room temperature.

[0065] The present invention also provides the use of the cleaning liquid in cleaning the semiconductor chip after etching and ashing.

[0066] Wherein, the semiconductor chip is preferably a copper interconnect or cobalt interconnect semiconductor chip.

[0067] Wherein, the cleaning temperature may be 10-90°C, preferably 20-60°C, more preferably 40-45°C.

[0068] In the present invention, "room temperature" refers to 10-30°C.

[0069] Without violating the common sense in the art, the above-mentioned preferred conditions can be arbitrarily combined to obtain the preferred embodiments of the present invention.

[0070] The reagents and raw materials of the present invention are commercially available.

[0071] The positive improvement effect of the present invention is that the cleaning solution provided by the present invention has a better cleaning effect on the residues after etching, has a better corrosion effect, can selectively remove the TiN hard mask, and can inhibit the damage of copper or copper alloy and cobalt or cobalt alloy. DETAILED DESCRIPTION

[0072] The present invention is further described below by way of examples, but the present invention is not limited to the scope of the examples. The experimental methods in the following examples without specifying specific conditions are carried out according to conventional methods and conditions, or selected according to the product specifications.

[0073] The CAS number of the polyetherimide used in the examples is 61128-46-9.

[0074] In the following examples and comparative examples, the preparation method of the cleaning solution includes the following steps: adding the solid component to the liquid component and stirring evenly.

[0075] In the following embodiments, if no specific operating temperature is specified, the operation is performed at room temperature.

[0076] The types of the raw material components in the cleaning solution of each embodiment are the raw material components and deionized water shown in Table 1.

[0077] Table 1: Types of raw material components in the cleaning solution of the embodiment and comparative example

[0078]

[0079]

[0080] The mass fractions of the raw material components in the cleaning solutions of the embodiments and comparative examples are shown in Table 2.

[0081] Table 2: Mass fraction of each raw material component in the cleaning solution of the embodiment and the comparative example (%)

[0082]

[0083] Effect Example

[0084] 1. Etching rate determination

[0085] Etching rate sample to be tested: a dummy wafer with a single material deposited on a silicon wafer, such as copper, titanium nitride, cobalt, dielectric material, etc.

[0086] Etching experiment: The sample to be tested was statically immersed in a semi-aqueous cleaning solution at 25°C for 60 minutes (10 minutes is recommended), then cleaned with deionized water and dried with nitrogen.

[0087] Measure the etching rate (A / min) Method: The thickness of the samples before and after etching was detected respectively. The metal samples were tested by a four-point probe instrument (CRESTEST-e from Napson, Japan), and the non-metallic samples were tested by an optical film thickness meter (Filmetrics F50 from the United States).

[0088] The corrosion effect is divided into four levels: A-good compatibility, no undercut; B-very slight undercut; C-a small amount of undercut; D-the undercut is more obvious and serious.

[0089] 2. Determination of cleaning effect

[0090] Cleaning effect samples to be tested: patterned wafers with graphic features (trench / VIA, etc.) and residues after plasma etching and residues after ashing.

[0091] Cleaning effect experimental method: The sample was statically immersed in the cleaning solution at 25°C for 2 minutes, then cleaned with deionized water and dried with nitrogen. The cleaning and corrosion effects were observed using an electron microscope (SEM).

[0092] The cleaning effect is divided into four levels: A-no residue is observed; B-very small amount of residue is observed; C-small amount of residue is observed; D-significantly more residue is observed.

[0093] Etching rate of the cleaning solution of Examples 1-12 and Comparative Examples 1-4 The etching effect and cleaning effect are shown in Table 3 below.

[0094] Table 3

[0095]

[0096]

[0097] It can be seen from the above table that, compared with comparative examples 1-4, the cleaning solution of embodiment 1-12 has significantly lower etching rates for Cu and Co, and has better corrosion inhibition performance.

Claims

1. A cleaning liquid, characterized in that: The raw materials include the following components in mass fraction: 0.1-40% oxidant, amine organic matter, corrosion inhibitor, chelating agent, surfactant and water, the water makes up the balance, and the sum of the mass fractions of each component is 100%; the amine organic matter is nitrogen alkyl ammonium hydroxide and / or alcohol amine; the chelating agent is one or more of n-ethylene m-amine, polyethylene polyamine and nitrogen-containing organic acid that are unsubstituted or substituted with one or more C1-C4 alkyl groups; n is an integer of 2-10, and m is an integer of 3-10; the surfactant is polyetherimide and / or polyvinyl acetate; the cleaning solution does not contain ammonium fluoride; the cleaning solution does not contain metal ions; The mass fraction of each component is the mass percentage of the mass of each component to the total mass of all components in the cleaning solution.

2. The cleaning solution according to claim 1, characterized in that The cleaning solution meets one or more of the following conditions: (1) The pH of the cleaning solution is 7.5-13.5; (2) The cleaning solution does not contain one or more of hydrogen fluoride, ammonium fluoride, tetramethylammonium fluoride, tetraethylammonium fluoride, tetrabutylammonium fluoride, fluoroboric acid and ammonium tetrafluoroborate; (3) the oxidant is one or more of hydrogen peroxide, N-methylmorpholine oxide, benzoyl peroxide, tetrabutylammonium peroxymonosulfate, ozone, ammonium peroxydisulfate, peracetic acid, urea peroxide, nitric acid, ammonium chlorite, ammonium chlorate, ammonium iodate, ammonium perborate, ammonium perchlorate, ammonium periodate, ammonium persulfate, tetramethylammonium chlorite, tetramethylammonium chlorate, tetramethylammonium iodate, tetramethylammonium perborate, tetramethylammonium perchlorate, tetramethylammonium periodate, tetramethylammonium persulfate, urea peroxide and peracetic acid; (4) The azanyl ammonium hydroxide is tetramethyl ammonium hydroxide; (5) The alcohol amine is one or more of monoethanolamine, diethanolamine and triethanolamine; (6) The corrosion inhibitor is benzotriazole, toluenetriazole, 5-phenyl-benzotriazole, 5-nitro-benzotriazole, 3-amino-5-mercapto-1,2,4-triazole, 1-amino-1,2,4-triazole, hydroxybenzotriazole, 2-(5-amino-pentyl)-benzotriazole, 1-amino-1,2,3-triazole, 1-amino-5-methyl-1,2,3-triazole, 3-amino-1,2,4-triazole, 3-mercapto-1,2,4-triazole, 3-isopropyl-1,2,4-triazole, 5-benzenethiol-benzotriazole, 5-chlorobenzotriazole, 4-chlorobenzotriazole, 5-bromobenzotriazole, 4-bromobenzotriazole, 5-fluorobenzotriazole, 4-fluorobenzotriazole one or more of oxazole, naphthotriazole, 2-mercaptobenzimidazole, 2-mercaptobenzothiazole, 4-methyl-2-phenylimidazole, 2-mercaptothiazoline, 5-aminotetrazole, 5-aminotetrazole monohydrate, 5-amino-1,3,4-thiadiazole-2-thiol, 2,4-diamino-6-methyl-1,3,5-triazine, thiazole, triazine, methyltetrazole, 1,3-dimethyl-2-imidazolidinone, 1,5-pentamethylenetetrazole, 1-phenyl-5-mercaptotetrazole, diaminomethyltriazine, imidazolinethione, mercaptobenzimidazole, 4-methyl-4H-1,2,4-triazole-3-thiol, 5-amino-1,3,4-thiadiazole-2-thiol and benzothiazole; (7) The n-ethylene-m-amine is diethylenetriamine and / or pentamethyldiethylenetriamine; (8) The nitrogen-containing organic acid is one or more of 2-aminoacetic acid, 2-aminobenzoic acid, iminodiacetic acid, nitrilotriacetic acid and ethylenediaminetetraacetic acid; (9) The surfactant is polyetherimide; (10) The CAS number of the polyvinyl acetate is 9003-20-7; and (11) The water is one or more of deionized water, distilled water and pure water.

3. The cleaning solution according to claim 2, characterized in that The cleaning solution meets one or more of the following conditions: (1) The pH of the cleaning solution is 8-12; (2) The cleaning solution does not contain fluoride; (3) The oxidant is hydrogen peroxide; (4) The alcohol amine is monoethanolamine and / or diethanolamine; (5) The corrosion inhibitor is benzotriazole; (6) The n-ethylene-m-amine is pentamethyldiethylenetriamine; (7) The nitrogen-containing organic acid is iminodiacetic acid; (8) The CAS number of the polyetherimide is 61128-46-9; and (9) The water is deionized water.

4. The cleaning solution according to claim 1, characterized in that The cleaning solution meets one or more of the following conditions: (1) The mass fraction of the oxidant is 0.5-30%; (2) The mass fraction of the amine organic matter is 0.01-20%; (3) The mass fraction of the corrosion inhibitor is 0.001-5%; (4) The mass fraction of the chelating agent is 0.001%-5%; and (5) The mass fraction of the surfactant is 0.001%-5%.

5. The cleaning solution according to claim 4, characterized in that The cleaning solution meets one or more of the following conditions: (1) The mass fraction of the oxidant is 25%; (2) The mass fraction of the amine organic matter is 0.1-15%; (3) The mass fraction of the corrosion inhibitor is 0.01-3%; (4) The mass fraction of the chelating agent is 0.01%-3%; and (5) The mass fraction of the surfactant is 0.01%-3%.

6. The cleaning solution according to claim 5, characterized in that The cleaning solution meets one or more of the following conditions: (1) The mass fraction of the amine organic matter is 13% or 10%; (2) The mass fraction of the corrosion inhibitor is 0.5%; (3) The mass fraction of the chelating agent is 1.5%; and (4) The mass fraction of the surfactant is 1%.

7. The cleaning solution according to claim 1, characterized in that The cleaning solution is the following scheme 1 or scheme 2; Solution 1: The raw materials of the cleaning solution include the following components by mass fraction: The oxidant is hydrogen peroxide; The mass fraction of the oxidant is 0.1-40%; The amine organic compound is one or more of tetramethylammonium hydroxide, monoethanolamine and diethanolamine; The mass fraction of the amine organic matter is 0.01-20%; The corrosion inhibitor is benzotriazole; The mass fraction of the corrosion inhibitor is 0.001-5%; The chelating agent is pentamethyldiethylenetriamine and / or iminodiacetic acid; The mass fraction of the chelating agent is 0.001%-5%; The surfactant is polyetherimide; The mass fraction of the surfactant is 0.001%-5%; The water is deionized water, and the deionized water makes up the balance; Solution 2 The raw materials of the cleaning solution include the following components by mass fraction: The oxidant is hydrogen peroxide; The mass fraction of the oxidant is 25%; The amine organic compound is one or more of tetramethylammonium hydroxide, monoethanolamine and diethanolamine; The mass fraction of the amine organic matter is 13% or 10%; The corrosion inhibitor is benzotriazole; The mass fraction of the corrosion inhibitor is 0.5%; The chelating agent is pentamethyldiethylenetriamine and / or iminodiacetic acid; The mass fraction of the chelating agent is 1.5%; The surfactant is polyetherimide; The mass fraction of the surfactant is 1%; The water is deionized water, and the deionized water makes up the balance.

8. The cleaning solution according to claim 1, characterized in that The raw materials of the cleaning solution include any combination of the following components in mass fraction: Combination 1: 25% hydrogen peroxide, 13% tetramethylammonium hydroxide, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 2: 25% hydrogen peroxide, 10% tetramethylammonium hydroxide, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 3: 25% hydrogen peroxide, 13% diethanolamine, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 4: 25% hydrogen peroxide, 10% diethanolamine, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 5: 25% hydrogen peroxide, 13% monoethanolamine, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 6: 25% hydrogen peroxide, 10% monoethanolamine, 0.5% benzotriazole, 1.5% pentamethyldiethylenetriamine, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 7: 25% hydrogen peroxide, 13% tetramethylammonium hydroxide, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 8: 25% hydrogen peroxide, 10% tetramethylammonium hydroxide, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 9: 25% hydrogen peroxide, 13% diethanolamine, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 10: 25% hydrogen peroxide, 10% diethanolamine, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 11: 25% hydrogen peroxide, 13% monoethanolamine, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with deionized water making up the balance; Combination 12: 25% hydrogen peroxide, 10% monoethanolamine, 0.5% benzotriazole, 1.5% iminodiacetic acid, 1% polyetherimide and deionized water, with the balance being made up with deionized water.

9. The cleaning solution according to any one of claims 1 to 8, characterized in that The raw materials of the cleaning liquid are composed of the following components in mass fraction: the oxidant, the amine organic matter, the corrosion inhibitor, the chelating agent, the surfactant and water, and the water makes up the balance.

10. A kit, characterized in that: The kit comprises one or more containers, wherein the oxidant according to any one of claims 1 to 8, the amine organic substance according to any one of claims 1 to 8, the corrosion inhibitor according to any one of claims 1 to 8, the chelating agent according to any one of claims 1 to 8, the surfactant according to any one of claims 1 to 8 and the water according to any one of claims 1 to 8 are placed in one or more containers.

Images