Semiconductor coating equipment as well as spraying device and use method thereof

Abstract

The invention provides a spraying device, semiconductor coating equipment and a using method of the spraying device, the spraying device is applied to the semiconductor coating equipment, the spraying device comprises a spraying module and an air inlet module arranged on the spraying module, the spraying module comprises a spraying plate with a mounting groove, and the air inlet module is arranged on the spraying plate. The spraying cover plate is arranged in the mounting groove, the surface of the side, close to the mounting groove, of the spraying cover plate is an inner concave surface, and the concave degree of the inner concave surface is larger from the side away from the air inlet module to the side close to the air inlet module; a trumpet-shaped first gas distribution chamber is formed between the inner concave surface and the bottom wall of the mounting groove. The spraying device solves the problem that in an existing spraying device, gas cannot be quickly diffused in a gas distribution chamber, so that the thickness of a thin film is not uniform.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing equipment, and in particular to a semiconductor coating equipment and a spray device and a use method thereof. Background Art

[0002] In semiconductor coating equipment, when coating the surface of a substrate, at least two reaction gases are required to alternately enter the reaction chamber through a spray device and then react on the surface of the substrate, namely, chemical adsorption reaction and surface chemical reaction to form a thin film. In order to ensure the uniformity and film quality of the thin film, a multi-layer structure is used inside the spray device to form two mutually isolated gas channels. The shape of the gas distribution chamber along the positive direction of the spray device is a rectangle. Since the gas flow direction in the gas channel is at right angles to the gas diffusion direction in the gas distribution chamber, this will cause the gas to circulate in the gas distribution chamber not very smoothly, and then the gas cannot be quickly and evenly diffused in the gas distribution chamber, which ultimately leads to uneven thickness of the film.

[0003] Therefore, it is necessary to develop a semiconductor coating equipment and its spray device and use method to solve the above problems existing in the prior art. Summary of the invention

[0004] The object of the present invention is to provide a semiconductor coating device and a spray device and a use method thereof, which solves the problem that the gas in the existing spray device cannot diffuse quickly in the gas distribution chamber, thereby causing uneven thickness of the film.

[0005] To achieve the above-mentioned purpose, the present invention provides a spray device, which is applied to semiconductor coating equipment, wherein the spray device includes a spray module and an air intake module arranged on the spray module, wherein the spray module includes a spray plate having a mounting groove and a spray cover plate arranged in the mounting groove, wherein the surface of the spray cover plate close to the mounting groove is a concave surface, and the greater the degree of depression of the concave surface from the side away from the air intake module to the side close to the air intake module, the more a trumpet-shaped first gas distribution chamber is formed between the concave surface and the bottom wall of the mounting groove.

[0006] The beneficial effect of the spray device described in the present invention is that: the surface of the spray cover plate close to the mounting groove is a concave surface, and the greater the degree of depression of the concave surface from the side away from the air intake module to the side close to the air intake module, a trumpet-shaped first gas distribution chamber is formed between the concave surface and the bottom wall of the mounting groove, which can enable the gas to be quickly guided from the air intake module to the first gas distribution chamber and quickly diffuse in the first gas distribution chamber, and then allow the gas to pass through the spray device quickly and evenly, and finally allow the gas to evenly react with the wafer surface to obtain a thin film with uniform thickness. The present invention solves the problem that the gas in the existing spray device cannot quickly diffuse in the gas distribution chamber, resulting in uneven thickness of the film.

[0007] Optionally, the spray cover plate includes a plurality of guide holes, which are obliquely arranged on the spray cover plate and penetrate the spray cover plate, and the gas introduced by the air intake module is accelerated and guided to the first gas distribution chamber through the plurality of guide holes. The beneficial effect is that the plurality of guide holes are provided on the spray cover plate, so that the gas can quickly pass through the air intake module and then enter the first gas distribution chamber.

[0008] Optionally, a second gas distribution chamber is opened at the bottom of the shower plate, and the first gas distribution chamber is not connected to the second gas distribution chamber.

[0009] Optionally, the air intake module includes an air intake body, which is fixedly arranged on the spray cover plate, and the air intake body is sealed with the gas inlet of the first gas distribution chamber.

[0010] Optionally, a first air intake channel and a second air intake channel are provided on the air intake body, the first air intake channel is arranged around the outer periphery of the second air intake channel and the first air intake channel and the second air intake channel are arranged coaxially, the gas enters the first gas distribution chamber through the first air intake channel, and the gas enters the second gas distribution chamber through the second air intake channel.

[0011] Optionally, the shower plate is provided with a plurality of first vent holes, the plurality of first vent holes are evenly distributed on the shower plate and the plurality of first vent holes penetrate the shower plate, and the gas in the first gas distribution chamber flows into the reaction chamber through the plurality of first vent holes.

[0012] Optionally, the first vent hole includes a large diameter vent hole and a small diameter vent hole, the large diameter vent hole is connected with the small diameter vent hole, and the large diameter vent hole is located on the spray plate close to one side of the first gas distribution chamber.

[0013] Optionally, the diameter of the large-diameter vent hole is 1-3 times the diameter of the small-diameter vent hole.

[0014] Optionally, the shower plate is provided with a plurality of second vent holes, and the gas in the second air inlet channel flows into the second gas distribution chamber through the plurality of second vent holes.

[0015] Optionally, the diameter of the large-diameter vent hole is smaller than the diameter of the second vent hole.

[0016] Optionally, the diameter of the second ventilation hole is 2-6 times the diameter of the large-diameter ventilation hole.

[0017] Optionally, the shower plate is provided with a plurality of third vent holes, the plurality of third vent holes are evenly distributed on the shower plate, and the gas in the second gas distribution chamber flows into the reaction chamber through the plurality of third vent holes.

[0018] Optionally, the diameter of the small-diameter vent hole is the same as the diameter of the third vent hole.

[0019] Optionally, a heating structure is provided on the shower plate surrounding the first gas distribution chamber, and the heating structure is used for placing a heating element.

[0020] Optionally, the heating structure is a plurality of heating slots, and the plurality of heating slots are obliquely arranged on the spray plate; the heating element is a plurality of heating rods, and the plurality of heating rods are placed in the plurality of heating slots.

[0021] Optionally, an annular groove is provided on the spray plate surrounding the first gas distribution chamber, and the annular groove is used for introducing the first cooling substance.

[0022] Optionally, the spray device further comprises a heat insulation plate, wherein the heat insulation plate is fixedly connected to the spray cover plate, and a second cooling structure is provided on the heat insulation plate, wherein the second cooling structure is used for placing a second cooling substance.

[0023] Optionally, a third cooling structure is provided on the spray cover plate, and the third cooling structure is used for placing a third cooling material.

[0024] Optionally, the spray device also includes a first degassing module and a second degassing module, the first degassing module and the second degassing module are fixedly arranged on the spray cover plate, the first degassing module includes a first degassing channel and a first degassing valve, the first degassing channel is connected to the first gas distribution chamber, the first degassing valve is arranged in the first degassing channel to control the on-off of the first degassing channel, the second degassing module includes a second degassing channel and a second degassing valve, the second degassing channel is connected to the second gas distribution chamber, and the second degassing valve is arranged in the second degassing channel to control the on-off of the second degassing channel.

[0025] The present invention further provides a semiconductor coating device, comprising the spray device and a reaction chamber, wherein the spray device is arranged above the reaction chamber.

[0026] The beneficial effect of the semiconductor coating equipment described in the present invention is that the gas passes through the first gas distribution chamber in the spray device, so that the gas quickly diffuses in the first gas distribution chamber, and then the gas quickly and evenly passes through the spray device. By using the semiconductor coating equipment of the present invention, a thin film with uniform thickness can be obtained.

[0027] The present invention also provides a method for using a semiconductor coating device, comprising the following steps: gas enters the reaction chamber through the spray device so that the gas reacts with the wafer in the reaction chamber to obtain a film with uniform thickness on the wafer.

[0028] The beneficial effect of the method of using the semiconductor coating equipment described in the present invention is that the gas passes through the spray device, so that the gas can react quickly and evenly with the wafer surface in the reaction chamber, and finally a thin film with uniform thickness is obtained on the wafer surface. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 A schematic diagram of a spray device of a semiconductor coating device according to an embodiment of the present invention;

[0030] Figure 2 A schematic structural diagram of an air intake module according to an embodiment of the present invention;

[0031] Figure 3 is a schematic structural diagram of a first degassing module according to an embodiment of the present invention;

[0032] Figure 4 is a structural schematic diagram of a second degassing module according to an embodiment of the present invention;

[0033] Figure 5 This is a schematic diagram of the structure of a spray cover plate according to an embodiment of the present invention;

[0034] Figure 6 A schematic diagram of the structure of a spray plate according to an embodiment of the present invention;

[0035] Figure 7 It is a schematic structural diagram of part B of the shower plate according to an embodiment of the present invention;

[0036] Figure 8 A schematic diagram of the structure of a ventilator according to an embodiment of the present invention;

[0037] Fig. 9 It is a schematic structural diagram of a spray plate and a cooling device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention. Unless otherwise defined, the technical terms or scientific terms used herein should be understood by people with general skills in the field to which the present invention belongs. "Including" and similar words used in this article mean that the elements or objects appearing before the word include the elements or objects listed after the word and their equivalents, without excluding other elements or objects.

[0039] The present invention provides a semiconductor coating equipment and its spray device and use method. The present invention uses a first air inlet channel and a second air inlet channel to independently pass a first process gas and a second process gas into a spray plate, so that the first process gas enters a first gas distribution chamber and the second process gas enters a second gas distribution chamber, thereby avoiding the first process gas and the second process gas from reacting during the transportation process; the first gas distribution chamber and the second gas distribution chamber of the present invention are equipped with independent degassing modules, which can assist in quickly discharging the gas in the spray plate during gas purging, shorten the process time, and improve the coating efficiency; the first gas distribution chamber of the present invention diffuses the first process gas to the external space through an inclined surface, which is conducive to uniform gas dispersion.

[0040] Figure 1 A schematic diagram of a spray device of a semiconductor coating device according to an embodiment of the present invention; Figure 2 A schematic structural diagram of an air intake module according to an embodiment of the present invention; Figure 3 is a schematic structural diagram of a first degassing module according to an embodiment of the present invention; Figure 4 is a structural schematic diagram of a second degassing module according to an embodiment of the present invention; Figure 5 This is a schematic diagram of the structure of a spray cover plate according to an embodiment of the present invention; Figure 6 A schematic diagram of the structure of a spray plate according to an embodiment of the present invention;

[0041] Figure 7 It is a schematic structural diagram of part B of the shower plate according to an embodiment of the present invention; Figure 8 A schematic diagram of the structure of a ventilator according to an embodiment of the present invention; Fig. 9 It is a schematic structural diagram of a spray plate and a cooling device according to an embodiment of the present invention.

[0042] Reference Figure 1An embodiment of the present invention provides a spray device 100, which is applied to semiconductor coating equipment. The spray device 100 includes a spray module 1 and an air intake module 2 arranged on the spray module 1. The spray module 1 includes a spray plate 12 with a mounting groove, and a spray cover plate 11 arranged in the mounting groove. The surface of the spray cover plate 11 close to the mounting groove is an inner concave surface. The greater the degree of depression of the inner concave surface from the side away from the air intake module 2 to the side close to the air intake module 2, the more a trumpet-shaped first gas distribution chamber 31 is formed between the inner concave surface and the bottom wall of the mounting groove. The present invention has a concave surface on the side of the spray cover plate close to the mounting groove. The greater the degree of depression of the concave surface from the side away from the air intake module to the side close to the air intake module, a trumpet-shaped first gas distribution chamber is formed between the concave surface and the bottom wall of the mounting groove, which can enable the gas to be quickly guided from the air intake module to the first gas distribution chamber and quickly diffuse in the first gas distribution chamber, and then allow the gas to pass through the spray device quickly and evenly, and finally allow the gas to evenly react with the wafer surface to obtain a film of uniform thickness. The present invention solves the problem that in the existing spray device, the gas cannot quickly diffuse in the gas distribution chamber, resulting in uneven thickness of the film.

[0043] Some embodiments of the present invention refer to Figure 1 and Figure 5 The spray cover plate 11 includes a plurality of guide holes 114, which are obliquely arranged on the spray cover plate 11 and penetrate the spray cover plate 11. The gas introduced by the air intake module 2 is accelerated and guided to the first gas distribution chamber 31 through the plurality of guide holes 114. The plurality of guide holes 114 are opened on the spray cover plate 11, so that the gas can quickly pass through the air intake module 2 and then enter the first gas distribution chamber 31.

[0044] Some embodiments of the present invention refer to Figure 1 , Figure 4 and Figure 5 The spray cover plate 11 is provided with a first degassing gas channel 111 and a second degassing gas channel 112. The first degassing channel 7111 is connected to the first gas distribution chamber 31 through the first degassing gas channel 111, and the second degassing channel 7211 is connected to the second gas distribution chamber 32 through the second degassing gas channel 112.

[0045] Some embodiments of the present invention refer to Figure 1 A second gas distribution chamber 32 is opened at the bottom of the shower plate 12 , and the first gas distribution chamber 31 is not connected to the second gas distribution chamber 32 .

[0046] Some embodiments of the present invention refer to Figure 1The air intake module 2 includes an air intake body 21 , and the air intake body 21 is fixedly disposed on the spray cover plate 11 . The air intake body 21 is sealed with the gas inlet of the first gas distribution chamber 31 .

[0047] Some embodiments of the present invention refer to Figure 1 The air intake body 21 is provided with a first air intake channel 211 and a second air intake channel 212. The first air intake channel 211 is arranged around the outer periphery of the second air intake channel 212 and the first air intake channel 211 and the second air intake channel 212 are arranged coaxially. The gas enters the first gas distribution chamber 31 through the first air intake channel 211, and the gas enters the second gas distribution chamber 32 through the second air intake channel 212.

[0048] Some embodiments of the present invention refer to Figure 1 and Figure 2 The air inlet body 21 is provided with a first air inlet 213 and a second air inlet 214, the first air inlet 213 is communicated with the first air inlet channel 211, the second air inlet 214 is communicated with the second air inlet channel 212, the first air inlet 213 is connected to a first air supply unit (not shown in the figure), the first air supply unit (not shown in the figure) provides gas for the first air inlet 213, the first air supply unit (not shown in the figure) includes a first switch valve (not shown in the figure), the first switch valve (not shown in the figure) is used to control the on and off of the first air supply unit (not shown in the figure), the second air inlet 214 is connected to the second air supply unit (not shown in the figure), the second air supply unit (not shown in the figure) provides gas for the second air inlet 214, the second air supply unit (not shown in the figure) includes a second switch valve (not shown in the figure), the second switch valve (not shown in the figure) is used to control the on and off of the second air supply unit (not shown in the figure).

[0049] Some embodiments of the present invention refer to Figure 6 , Figure 7 and Figure 8, the shower plate 12 is provided with a plurality of first vents 131, a plurality of second vents 132 and a plurality of third vents 133, the plurality of first vents 131 are evenly distributed on the shower plate 12 and the plurality of first vents 131 penetrate the shower plate 12, the gas in the first gas distribution chamber 31 flows into the reaction chamber through the plurality of first vents 131, the gas in the second gas inlet channel 212 flows into the second gas distribution chamber 32 through the plurality of second vents 132, the plurality of third vents 133 are evenly distributed on the bottom of the shower plate 12, and the gas in the second gas distribution chamber 32 flows into the reaction chamber through the plurality of third vents 133. In some other embodiments, the plurality of second vents 132 are connected to each other, and one of the plurality of second vents 132 is sealed and connected to the second gas inlet channel 212. In some other embodiments, each of the plurality of second vents 132 is sealed and connected to the second gas inlet channel 212. Different numbers of the first vent holes 131 , the second vent holes 132 , and the third vent holes 133 may be designed according to process requirements and cost considerations.

[0050] Some embodiments of the present invention refer to Figure 6 and Figure 7 The shape of the shower plate 12 is circular, a first vent hole 131 is provided at the center of the shower plate 12, the number of the second vent holes 132 is 4, and the second vent holes 132 are evenly distributed around the first vent hole 131 with the center of the shower plate 12 as the center.

[0051] Some specific embodiments of the present invention refer to Figure 1 and Figure 7 The air inlet body 21 is sealed and connected to any one of the four second air vents 132 so that the second air inlet passage 212 is connected to the second air vent 132, and the four second air vents 132 are connected. Figure 1 and Figure 7 The air intake body 21 is sealedly connected to the four second air vents 132 so that the second air intake channel 212 is connected to the second air vents 132, and the four second air vents 132 are not connected.

[0052] Some embodiments of the present invention refer to Figure 1 , Figure 7 and Figure 8The first vent hole 131 includes a large diameter vent hole 1311 and a small diameter vent hole 1312, the large diameter vent hole 1311 is connected with the small diameter vent hole 1312, the large diameter vent hole 1311 is located on the spray plate 12 near the first gas distribution chamber 31, the diameter of the large diameter vent hole 1311 is smaller than the diameter of the second vent hole 132, and the diameter of the small diameter vent hole 1312 is the same as the diameter of the third vent hole 133. Since the length of the first vent hole 131 is relatively long, the large diameter vent hole 1311 is provided at the upper end of the first vent hole 131 to reduce the gas flow resistance and accelerate the outflow of the process gas.

[0053] In some embodiments of the present invention, the diameter of the second vent hole is 2-6 times the diameter of the large diameter vent hole. Figure 7 , the diameter of the second vent hole 132 is 4 times the diameter of the large diameter vent hole 1311. In some specific embodiments, the diameter of the large diameter vent hole is 1-3 times the diameter of the small diameter vent hole. In some more specific embodiments, the diameter of the second vent hole is any one of 2 times, 2.5 times, 3 times, 3.5 times, 4 times, 4.5 times, 5 times, 5.5 times, and 6 times the diameter of the large diameter vent hole; the diameter of the large diameter vent hole 1311 is any one of 1 times, 1.5 times, 2 times, 2.5 times, and 3 times the diameter of the small diameter vent hole 1312. In other specific embodiments, the diameter of the large diameter vent hole 1311 is 2 times the diameter of the small diameter vent hole 1312, the diameter of the large diameter vent hole 1311 is R, the diameter of the small diameter vent hole 1312 is r, and the relationship between R and r is R=2r.

[0054] In some embodiments of the present invention, a heating structure is provided on the spray plate surrounding the first gas distribution chamber, and the heating structure is used to place a heating element, and the heating element is used to adjust the temperature of the spray device.

[0055] Some embodiments of the present invention refer to Fig. 9 The heating structure is a plurality of heating grooves 121, and the plurality of heating grooves 121 are obliquely arranged on the spray plate 12. The heating element is a plurality of heating rods 122, and the plurality of heating rods 122 are placed in the plurality of heating grooves for adjusting the temperature of the spray device 100.

[0056] In some embodiments of the present invention, a first cooling structure is provided on the spray plate surrounding the first gas distribution chamber, and the first cooling structure is used to introduce a first cooling substance, and the first cooling substance cooperates with the heating element to adjust the temperature of the spray device.

[0057] Some embodiments of the present invention refer to Fig. 9 , the first cooling structure is an annular groove 123, the annular groove 123 is provided on the spray plate 12, the annular groove 123 is passed through the first cooling substance to adjust the temperature of the spray device. In some specific embodiments, the inlet of the annular groove 123 is used to enter the cooling substance, the outlet of the annular groove 123 is used to discharge the cooling substance, the cooling substance is passed through the cooling device 8 and enters the inlet of the annular groove 123, the cooling substance includes wind, water, organic matter and mist, the organic matter includes perfluorinated oil and ethylene glycol. In other specific embodiments, refer to Fig. 9 If the cooling substance is mist, the cooling device 8 includes an atomizer 81, a gas channel 82 and a liquid channel 83, the gas channel 82 is in communication with the atomizer 81, the liquid channel 83 is in communication with the atomizer 81, the liquid enters the atomizer 81 through the liquid channel 83, the gas enters the atomizer 81 through the gas channel 82, the gas and the liquid are mixed in the atomizer 81 and then provide mist to the inlet of the annular groove 123. In some other specific embodiments, referring to the figure, if the cooling substance is wind, water or organic matter, the cooling device 8 only includes the liquid channel 83.

[0058] Some embodiments of the present invention refer to Figure 1 , Figure 3 and Figure 4 , the spray device 100 also includes a heat insulation plate 5, the heat insulation plate 5 is fixedly connected to the spray cover plate 11, a second cooling structure is provided on the heat insulation plate 5, and a third cooling structure is provided on the spray cover plate 11, the second cooling structure is used to place a second cooling substance, and the third cooling structure is used to place a third cooling substance, and the second cooling substance and the third cooling substance are used to adjust the temperature of the spray device. In some specific embodiments, the second cooling structure and the third cooling structure are both cooling troughs, the second cooling substance includes water and wind, and the third cooling substance includes water and wind. In other specific embodiments, the second cooling substance and the third cooling substance are the same, the second cooling substance is water, and the third cooling substance is water, refer to Figure 1 The spray cover plate 11 is provided with a first cooling groove 113, water is passed into the first cooling groove 113 to adjust the temperature of the spray device 100, and the heat insulation plate 5 is provided with a second cooling groove 51, water is passed into the second cooling groove 51 to adjust the temperature of the spray device 100. In some other specific embodiments, the second cooling substance and the third cooling substance are different, the second cooling substance is water, and the third cooling substance is wind.

[0059] Some embodiments of the present invention refer to Figure 1The heat insulation plate 5 is provided with a first air intake module channel, and the air intake module 2 is fixedly connected to the spray cover plate 11 through the first air intake module channel.

[0060] Some embodiments of the present invention refer to Figure 1 and Figure 6 The spray device 100 also includes a fixed cover plate 6 , which is disposed above the heat insulation plate 5 and fixedly connected to the heat insulation plate 5 .

[0061] Some embodiments of the present invention refer to Figure 1 The fixed cover plate 6 is provided with a second air intake module channel, and the air intake module 2 is fixedly connected to the spray cover plate 11 through the second air intake module channel and the first air intake module channel.

[0062] Some embodiments of the present invention refer to Figure 1 The spray device 100 further includes a first degassing module 71 and a second degassing module 72 . The first degassing module 71 and the second degassing module 72 penetrate the fixed cover plate 6 and the heat insulation plate 5 and are fixedly disposed on the spray cover plate 11 .

[0063] In some embodiments of the present invention, the first degassing module includes a first degassing channel and a first degassing valve, the first degassing channel is connected to the first gas distribution chamber, and the first degassing valve is arranged in the first degassing channel to control the on-off of the first degassing channel; the second degassing module includes a second degassing channel and a second degassing valve, the second degassing channel is connected to the second gas distribution chamber, and the second degassing valve is arranged in the second degassing channel to control the on-off of the second degassing channel.

[0064] Some specific embodiments of the present invention refer to Figure 1 and Figure 3The first degassing module 71 includes a first degassing body 711 and a first degassing valve 712. The first degassing body 711 penetrates the fixed cover plate 6 and the insulation plate 5 and is fixedly arranged on the spray cover plate 11. The first degassing body 711 is provided with a first degassing channel 7111. The first degassing valve 712 is arranged in the first degassing channel 7111 for controlling the on-off of the first degassing channel 7111. The first degassing channel 7111 is connected to the first gas distribution chamber 31 so as to quickly discharge the residual gas in the first gas distribution chamber 31 during purging. The second degassing module 72 includes a second degassing body 721 and a second degassing valve 722. The second degassing body 721 penetrates the fixed cover plate 6 and the insulation plate 5 and is fixedly arranged on the spray cover plate 11. The second degassing body 721 is provided with a second degassing channel 7211. The second degassing valve 722 is arranged in the second degassing channel 7211 to control the on-off of the second degassing channel 7211. The second degassing channel 7211 is connected to the second gas distribution chamber 32 for quickly discharging the residual gas in the second gas distribution chamber 32 during purging.

[0065] Some embodiments of the present invention refer to Figure 1 , Figure 3 , Figure 4 and Figure 5 The first degassing channel 7111 is connected to the first gas distribution chamber 31 through the first degassing gas channel 111, and the second degassing channel 7211 is connected to the second gas distribution chamber 32 through the second degassing gas channel 112. One end of the first degassing gas channel 111 is connected to the first degassing channel 7111, and the other end of the first degassing gas channel 111 is connected to an exhaust pump (not shown in the figure), and the exhaust pump (not shown in the figure) is used to extract the gas in the first gas distribution chamber 31, one end of the second degassing gas channel 112 is connected to the second degassing channel 7211, and the other end of the second degassing gas channel 112 is connected to the exhaust pump (not shown in the figure), and the exhaust pump (not shown in the figure) is used to extract the gas in the second gas distribution chamber 32.

[0066] In some embodiments of the present invention, taking the atomic layer deposition process as an example, the first degassing valve 712 and the second degassing valve 722 are closed, the first process gas is introduced into the first gas inlet channel 211, and the inert gas is introduced into the second gas inlet channel 212 at the same time, the first process gas is rapidly and evenly diffused in the first gas distribution chamber 31, and the diffused first process gas flows out of the spray device 100 through the first vent 131, the inert gas enters the second vent 132 through the second gas inlet channel 212, and then enters the second gas distribution chamber 32 and diffuses, and the diffused inert gas flows out of the spray device 100 through the third vent 133, and after the first process gas completes the reaction, the purge gas is introduced, the first degassing valve 712 is opened to start the first degassing module 71, and the second degassing valve 722 is opened at the same time. The second degassing module 72 is started to accelerate the exhaust. After the purging is completed, the first degassing valve 712 and the second degassing valve 722 are closed, and the second process gas is introduced into the second air inlet channel 212. At the same time, an inert gas is introduced into the first air inlet channel 211. The second process gas enters the second gas distribution chamber 32 through the second air vent 132 and quickly diffuses. The diffused second process gas flows out of the spray device 100 through the third air vent 133. The inert gas quickly diffuses in the first gas distribution chamber, and then flows out of the spray device through the first air vent 131. After the second process gas completes the reaction, the purging gas is introduced, the first degassing valve 712 is opened to start the first degassing module 71, and the second degassing valve 722 is opened to start the second degassing module 72 to accelerate the exhaust. The above process is repeated.

[0067] In some embodiments of the present invention, since the trumpet shape of the first gas distribution chamber 31 is more conducive to the introduction of process gases with small flow and high viscosity, the second gas distribution chamber 32 is more conducive to the introduction of process gases with large flow and easy to purge.

[0068] In some embodiments of the present invention, in a chemical vapor deposition process, a first process gas enters the first gas distribution chamber 31 through the first gas inlet channel 211, a second process gas first enters the second gas distribution chamber 32 through the second gas inlet channel 212 and then through the second vent hole 132, the first process gas flows out of the spray device 100 through the first vent hole 131, and the second process gas flows out of the spray device through the third vent hole 133, the first process gas and the second process gas flowing out of the spray device 100 are mixed, and then enter the reaction chamber at the same time to react.

[0069] The embodiment of the present invention further provides a semiconductor coating device including the spray device 100 and a reaction chamber, wherein the spray device 100 is arranged above the reaction chamber. The gas passes through the first gas distribution chamber in the spray device, so that the gas quickly diffuses in the first gas distribution chamber, and then the gas quickly and evenly passes through the spray device. By using the semiconductor coating device of the present invention, a film with uniform thickness can be obtained.

[0070] The embodiment of the present invention also provides a method for using a semiconductor coating device, comprising the following steps: the gas enters the reaction chamber through the spray device so that the gas reacts with the wafer in the reaction chamber to obtain a film of uniform thickness on the wafer. The gas passes through the spray device so that the gas can react quickly and evenly with the surface of the wafer in the reaction chamber, and finally a film of uniform thickness is obtained on the surface of the wafer.

[0071] Although the embodiments of the present invention are described in detail above, it is obvious to those skilled in the art that various modifications and variations can be made to these embodiments. However, it should be understood that such modifications and variations are within the scope and spirit of the present invention as described in the claims. Moreover, the present invention described herein may have other embodiments and may be implemented or realized in a variety of ways.

Claims

1. A spray device, applied to semiconductor coating equipment, characterized in that: The spray device includes a spray module and an air intake module arranged on the spray module. The spray module includes a spray plate with a mounting groove and a spray cover plate arranged in the mounting groove. The surface of the spray cover plate close to the mounting groove is a concave surface. The greater the degree of depression of the concave surface from the side away from the air intake module to the side close to the air intake module, the more a trumpet-shaped first gas distribution chamber is formed between the concave surface and the bottom wall of the mounting groove.

2. The spray device according to claim 1, characterized in that: The spray cover plate includes a plurality of guide holes, which are obliquely arranged on the spray cover plate and penetrate the spray cover plate. The gas introduced into the air intake module is accelerated and guided to the first gas distribution chamber through the plurality of guide holes.

3. The spray device according to claim 1 or 2, characterized in that: A second gas distribution chamber is provided at the bottom of the shower plate, and the first gas distribution chamber is not connected to the second gas distribution chamber.

4. The spray device according to claim 3, characterized in that: The air intake module comprises an air intake body, which is fixedly arranged on the spray cover plate, and the air intake body is sealed with the gas inlet of the first gas distribution chamber.

5. The spray device according to claim 4, characterized in that: The air intake body is provided with a first air intake channel and a second air intake channel, the first air intake channel is arranged around the outer periphery of the second air intake channel and the first air intake channel and the second air intake channel are arranged coaxially, the gas enters the first gas distribution chamber through the first air intake channel, and the gas enters the second gas distribution chamber through the second air intake channel.

6. The spray device according to claim 5, characterized in that: The shower plate is provided with a plurality of first vent holes, which are evenly distributed on the shower plate and penetrate the shower plate, and the gas in the first gas distribution chamber flows into the reaction chamber through the plurality of first vent holes.

7. The spray device according to claim 6, characterized in that: The first vent holes include a large diameter vent hole and a small diameter vent hole, the large diameter vent hole is connected with the small diameter vent hole, and the large diameter vent hole is located on the spray plate close to one side of the first gas distribution chamber.

8. The spray device according to claim 7, characterized in that: The diameter of the large-diameter vent hole is 1-3 times the diameter of the small-diameter vent hole.

9. The spray device according to claim 7, characterized in that: The shower plate is provided with a plurality of second vent holes, and the gas in the second air inlet channel flows into the second gas distribution chamber through the plurality of second vent holes.

10. The spray device according to claim 9, characterized in that: The diameter of the large-diameter vent hole is smaller than the diameter of the second vent hole.

11. The spray device according to claim 9, characterized in that: The diameter of the second vent hole is 2-6 times the diameter of the large-diameter vent hole.

12. The spray device according to claim 7, characterized in that: The shower plate is provided with a plurality of third vent holes, which are evenly distributed on the shower plate, and the gas in the second gas distribution chamber flows into the reaction chamber through the plurality of third vent holes.

13. The spray device according to claim 12, characterized in that: The diameter of the small-diameter vent hole is the same as the diameter of the third vent hole.

14. The spray device according to claim 1, characterized in that: A heating structure is provided on the shower plate surrounding the first gas distribution chamber, and the heating structure is used for placing a heating element.

15. The spray device according to claim 14, characterized in that: The heating structure is a plurality of heating slots, and the plurality of heating slots are obliquely arranged on the spray plate. The heating element is a plurality of heating rods, and the plurality of heating rods are placed in the plurality of heating slots.

16. The spray device according to claim 1, characterized in that: An annular groove is provided on the spray plate surrounding the first gas distribution chamber, and the annular groove is used for introducing the first cooling material.

17. The spray device according to claim 1, characterized in that: It also includes a heat insulation plate, which is fixedly connected to the spray cover plate. A second cooling structure is provided on the heat insulation plate, and the second cooling structure is used to place a second cooling material.

18. The spray device according to claim 1, characterized in that: The spray cover plate is provided with a third cooling structure, and the third cooling structure is used for placing a third cooling material.

19. The spray device according to claim 3, characterized in that: It also includes a first degassing module and a second degassing module, the first degassing module and the second degassing module are fixedly arranged on the spray cover plate, the first degassing module includes a first degassing channel and a first degassing valve, the first degassing channel is connected to the first gas distribution chamber, the first degassing valve is arranged in the first degassing channel to control the on-off of the first degassing channel, the second degassing module includes a second degassing channel and a second degassing valve, the second degassing channel is connected to the second gas distribution chamber, and the second degassing valve is arranged in the second degassing channel to control the on-off of the second degassing channel.

20. A semiconductor coating device, characterized in that: It comprises the spray device and reaction chamber as described in any one of claims 1 to 19, wherein the spray device is arranged above the reaction chamber.

21. A method for using the semiconductor coating device according to claim 20, characterized in that: The following steps are involved: The gas enters the reaction chamber through the spray device so that the gas reacts with the wafer in the reaction chamber to obtain a film with uniform thickness on the wafer.

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