Silicon carbide powder synthesizing device
By adopting a hollow cylindrical graphite crucible and water-cooled structure in the silicon carbide powder synthesis device, the powder is heated evenly, and the problems of insufficient heating and temperature differences caused by poor thermal conductivity are solved, and the production efficiency and production capacity are improved.
Patent Information
- Application Number
- CN202411279724.4
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-12
- Publication Date
- 2025-01-03
AI Technical Summary
The existing silicon carbide powder synthesis device has poor thermal conductivity, resulting in insufficient heating of the central part, resulting in the failure of β-phase silicon carbide to complete the transition to the α-phase, and the temperature difference is too large, resulting in silicon inclusion and carbon inclusion. Affects yield.
A silicon carbide powder synthesis device including a furnace cover and a furnace base is designed, and a hollow cylindrical graphite crucible is used for heating, combining a water-cooled structure and a threaded circulation chamber, and flows through the circulation chamber through rapid cooling liquid to guide cooling, and use The heater diffuses heat to the surroundings with the heating chamber as the axis to ensure that the powder is heated evenly.
The uniform heating of the powder is achieved, the occurrence of silicon inclusions and carbon inclusions is avoided, the production efficiency and production capacity of silicon carbide powder is improved, and the cooling and cooling time is reduced.
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Figure CN119236860A_ABST
Abstract
Description
Technical Field
[0001] The invention belongs to the technical field of silicon carbide powder, in particular to a silicon carbide powder synthesis device. Background Art
[0002] As a representative of the third generation of semiconductor materials, silicon carbide is widely used in power electronics, radio frequency devices, optoelectronic devices and other fields due to its excellent properties such as large bandgap, high saturated electron mobility, strong breakdown field, and high thermal conductivity. At present, the mainstream technology for the synthesis of silicon carbide powder is the self-propagating method, that is, silicon powder and carbon powder are fully mixed and placed in a graphite crucible, and silicon carbide powder can be obtained by controlling the growth time and growth temperature.
[0003] A patent with publication number CN117695973B discloses a silicon carbide powder synthesis device, which provides a first mixed gas flow through a carbon source supply bin and a second mixed gas flow through a silicon source supply bin. The first mixed gas flow and the second mixed gas flow are both circulated to a reaction zone, so that hydrocarbon gas combines with silane, and the reaction zone can generate silicon carbide powder at the reaction temperature, thereby forming a third mixed gas flow mixed with silicon carbide powder. The third mixed gas flow continues to flow to the guide hole, wherein silicon carbide particles with larger particle size and heavier particle size will fall onto a diverter plate and slide down to a collecting bin under the action of gravity, so that silicon carbide powder that meets the particle size requirements in the third mixed gas flow can be sorted through the diverter plate. By setting the diverter plate, silicon carbide powder that meets the particle size requirements can be sorted out, thereby ensuring that the size of the silicon carbide particles collected in the collecting bin is more uniform, meeting the large particle size requirements, improving the output rate of the powder synthesis reaction, and reducing the powder cost.
[0004] There are still some problems in the actual application of the above scheme. When the size of the crucible continues to increase and the loading amount continues to increase, the center part is often not heated sufficiently due to the poor thermal conductivity of the powder, which will cause the β-phase silicon carbide to fail to complete the transformation to the α-phase silicon carbide. The large temperature difference will also lead to the appearance of silicon inclusions and carbon inclusions. Increasing the power or extending the reaction time can improve this situation, but it will cause the silicon carbide powder at the edge to graphitize, which is not worth the loss in terms of output.
[0005] To this end, the present invention provides a silicon carbide powder synthesis device. Summary of the invention
[0006] In order to make up for the deficiencies of the prior art, at least one technical problem raised in the background technology is solved.
[0007] The technical solution adopted by the present invention to solve the technical problem is as follows: a silicon carbide powder synthesis device described in the present invention comprises a furnace cover and a furnace base, the furnace cover and the furnace base are butted against each other, a support frame is installed at the bottom of the inner cavity of the furnace base, a heat-insulating shell is installed at the upper end of the support frame, and the heat-insulating shell is made of short-fiber hard felt, a graphite crucible is installed in the inner cavity of the heat-insulating shell, a heating chamber is arranged in the middle of the inner cavity of the graphite crucible, and a water-cooling structure is arranged inside the furnace cover; The water cooling structure includes a circulation chamber opened inside the furnace cover, the circulation chamber is threaded, the inner wall of the furnace cover is provided with a connecting port, and the connecting port is connected to one end of the circulation chamber, and a drainage port is opened on one side of the upper end surface of the furnace cover, and the drainage port is connected to one end of the circulation chamber.
[0008] Preferably, a cooling cavity is provided inside the heat-insulating shell, a threaded liquid-guiding sheet is fixedly connected to the inner wall of the cooling cavity, and a water inlet is provided at the upper end of the heat-insulating shell, and the water inlet is communicated with the cooling cavity.
[0009] Preferably, a water return port is provided on the outside of the heat-insulating shell, the water return port is communicated with the cooling chamber, a conduit is fixedly connected to the outside of the water return port, and one end of the conduit is fixedly mounted to the communication port.
[0010] Preferably, a cross bar is installed inside the upper end of the heat-insulating shell, two clamping blocks are symmetrically installed on the upper end surface of the cross bar, and a heater is fixedly installed between the two clamping blocks, and the heater is plugged into the heating chamber.
[0011] Preferably, a threaded joint is provided at the upper end of the heater, an upper electrode is installed on the upper wall of the furnace hood inner cavity, a threaded interface is provided inside the lower end of the upper electrode, and the threaded joint is threadedly connected to the threaded interface.
[0012] Preferably, an insert block is provided at the lower end of the heater, a lower electrode is installed at the bottom of the inner cavity of the furnace base, a slot is provided at the upper end of the lower electrode, and the insert block is plugged into the slot.
[0013] Preferably, a copper electrode is installed on the upper wall of the inner cavity of the furnace hood, and the copper electrode is electrically connected to the upper electrode, and a plurality of induction heaters are installed on the lower end surface of the copper electrode.
[0014] Preferably, a copper electrode is provided at the bottom of the inner cavity of the furnace base, and the copper electrode is connected to the lower electrode motor.
[0015] Preferably, a plurality of clamping blocks are fixedly connected to the outside of the furnace cover, a plurality of buckles are fixedly connected to the outside of the furnace base, and the clamping blocks are clamped to the buckles.
[0016] Preferably, the upper electrode and the lower electrode are both graphite electrodes, and the upper end of the upper electrode is threadedly connected to the copper electrode.
[0017] The beneficial effects of the present invention are as follows: 1. The silicon carbide powder synthesis device described in the present invention is a device for synthesizing silicon carbide powder. The powder prepared by mixing silicon powder and carbon powder is put into a graphite crucible, and the graphite crucible is a hollow cylindrical shape. When the graphite crucible is heated, the heat can be diffused around the heating chamber as the axis, so that the powder prepared by mixing silicon powder and carbon powder in the inner cavity of the graphite crucible is evenly heated, and the temperature difference of the powder is prevented from being too large, resulting in the appearance of silicon inclusions and carbon inclusions. After the powder is heated, the cooling liquid in the circulation chamber is extracted by using an external water pump in conjunction with the drain port, and the cooling liquid is passed through the connecting port. The coolant is drawn into the circulation chamber, and after the coolant flows through the circulation chamber, the inner chamber of the furnace hood can be quickly cooled by cooling. Then, the synthesized silicon carbide powder is collected by opening the furnace hood, and new silicon powder and carbon powder are replaced at the same time, thereby improving the production efficiency of silicon carbide powder. The problem of insufficient heating of the center part often occurs in the existing silicon carbide powder synthesis device due to the poor thermal conductivity of the powder, which will cause the β-phase silicon carbide to fail to complete the transformation to the α-phase silicon carbide. The large temperature difference will also cause the problem of silicon inclusions and carbon inclusions.
[0018] 2. The silicon carbide powder synthesis device described in the present invention injects cooling liquid into the inner cavity of the water inlet, and the cooling liquid flows into the cooling cavity through the water inlet, and the inner wall of the cooling cavity is provided with a threaded liquid guide plate, so that the cooling liquid flowing into the inner cavity of the cooling cavity flows in a threaded manner along the threaded liquid guide plate, thereby realizing cooling of the entire graphite crucible, and after the cooling liquid flows to the tail end of the cooling cavity, it flows into the inlet conduit through the return water port, and at the same time flows into the inner cavity of the inlet connecting port through the conduit, and then the cooling liquid in the circulation cavity is extracted by an external water pump, and then after the cooling liquid flows through the circulation cavity, the inner cavity of the furnace cover can be cooled, thereby reducing the cooling and cooling time of the synthesis device, solving the problem that after the existing silicon carbide powder synthesis device heats the powder made by mixing silicon powder and carbon powder to prepare silicon carbide powder, the furnace cover is usually opened to collect the silicon carbide powder after waiting for the silicon carbide powder to cool naturally, and this collection method is not only inefficient, but also affects the production capacity of silicon carbide powder. BRIEF DESCRIPTION OF THE DRAWINGS
[0019] The present invention will be further described below in conjunction with the accompanying drawings.
[0020] Figure 1 It is a schematic diagram of the structure of the main view of the present invention as a whole; Figure 2 It is a structural schematic diagram of the furnace cover of the present invention being opened; Figure 3 It is a schematic diagram of the structure of the interior of the cooling chamber of the present invention in half section; Figure 4 It is a schematic diagram of the structure of a half-section of a furnace cover of the present invention; Figure 5It is a schematic diagram of the structure of the present invention when viewed from above; Figure 6 It is a schematic diagram of the planar structure of the graphite crucible of the present invention; Figure 7 It is a schematic diagram of the structure of the interior of a half-section furnace cover of the present invention; In the figure: 1. furnace cover; 2. furnace base; 3. clamping block; 4. buckle; 5. support frame; 6. insulation shell; 7. graphite crucible; 8. copper electrode; 9. lower electrode; 10. upper electrode; 11. heating chamber; 12. heater; 13. induction heater; 14. cross bar; 15. water inlet; 16. lifting ear; 17. cooling chamber; 18. threaded liquid guide plate; 19. threaded joint; 20. plug-in block; 21. slot; 22. threaded interface; 23. water return port; 24. clamping block; 25. circulation chamber; 26. connecting port; 27. drain port; 28. conduit. DETAILED DESCRIPTION
[0021] In order to make the technical means, creative features, objectives and effects achieved by the present invention easy to understand, the present invention is further explained below in conjunction with specific implementation methods. Embodiment 1
[0022] like Figures 1 to 7 As shown, a silicon carbide powder synthesis device according to an embodiment of the present invention comprises a furnace cover 1 and a furnace base 2, the furnace cover 1 and the furnace base 2 are butted against each other, a support frame 5 is installed at the bottom of the inner cavity of the furnace base 2, a heat-insulating shell 6 is installed at the upper end of the support frame 5, and the heat-insulating shell 6 is made of short-fiber hard felt, a graphite crucible 7 is installed in the inner cavity of the heat-insulating shell 6, a heating chamber 11 is arranged in the middle of the inner cavity of the graphite crucible 7, and a water-cooling structure is arranged inside the furnace cover 1; The water cooling structure includes a circulation chamber 25 opened inside the furnace cover 1, the circulation chamber 25 is threaded, a connecting port 26 is opened on the inner wall of the furnace cover 1, and the connecting port 26 is connected to one end of the circulation chamber 25, and a drainage port 27 is opened on one side of the upper end surface of the furnace cover 1, and the drainage port 27 is connected to one end of the circulation chamber 25.
[0023] Specifically, in the prior art, due to the poor thermal conductivity of the powder made by mixing silicon powder and carbon powder, the central part is often not heated sufficiently, which will cause the β-phase silicon carbide to fail to complete the transformation to the α-phase silicon carbide. The large temperature difference will also lead to the appearance of silicon inclusions and carbon inclusions. Increasing the power or extending the reaction time can improve this situation, but it will cause the silicon carbide powder at the edge to graphitize, resulting in a significant reduction in production. When preparing silicon carbide powder, the present invention disassembles and separates the furnace cover 1 from the furnace base 2, and then opens the heat-insulating shell 6 in the inner cavity of the furnace cover 1, and puts the powder made by mixing silicon powder and carbon powder into the graphite crucible 7, and the graphite crucible 7 is a hollow cylinder, and the hole in the center is a heating chamber 11, so that when the graphite crucible 7 is heated, the heat can be diffused to the surroundings in a cylindrical ring shape, so that the powder made by mixing silicon powder and carbon powder in the inner cavity of the graphite crucible 7 is evenly heated, and the temperature difference of the powder is prevented from being too large, which leads to the appearance of silicon inclusions and carbon inclusions. After the powder is heated, By connecting with the drain port 27 through an external hose, and using an external water pump to extract the coolant in the circulation chamber 25, and then pumping the coolant into the circulation chamber 25 through the connecting port 26, the circulation chamber 25 is threadedly arranged inside the furnace cover 1, and then after the coolant flows through the circulation chamber 25, the inner cavity of the furnace cover 1 can be quickly cooled, so that the heated and synthesized silicon carbide powder can be quickly cooled down, and then the synthesized silicon carbide powder can be collected by opening the furnace cover 1, and the new powder made by mixing silicon powder and carbon powder can be replaced, thereby improving the production efficiency of silicon carbide powder, thereby solving the above-mentioned problems.
[0024] like Figure 3 , Figure 6 and Figure 7 As shown, a cooling cavity 17 is provided inside the heat-insulating shell 6 , a threaded liquid guide plate 18 is fixedly connected to the inner wall of the cooling cavity 17 , a water inlet 15 is provided at the upper end of the heat-insulating shell 6 , and the water inlet 15 is communicated with the cooling cavity 17 .
[0025] like Figure 3 , Figure 6 and Figure 7 As shown, a water return port 23 is provided outside the heat preservation shell 6 , and the water return port 23 is connected to the cooling chamber 17 . A conduit 28 is fixedly connected to the outside of the water return port 23 , and one end of the conduit 28 is fixedly installed with the connecting port 26 .
[0026] Specifically, after the powder material made by mixing silicon powder and carbon powder is heated, the coolant is poured into the inner cavity of the water inlet 15, and the coolant flows into the cooling cavity 17 through the water inlet 15, and the inner wall of the cooling cavity 17 is provided with a threaded liquid guide sheet 18, so that the coolant flowing into the inner cavity of the cooling cavity 17 flows along the threaded liquid guide sheet 18 in a threaded manner, thereby realizing the cooling of the entire graphite crucible 7, and after the coolant flows to the tail end of the cooling cavity 17, it flows into the inlet conduit 28 through the water return port 23, and at the same time flows into the inner cavity of the inlet communication port 26 through the conduit 28, and then the external water pump is used to extract the circulation cavity The cooling liquid in 25 is drawn into the circulation chamber 25 through the connecting port 26, and the circulation chamber 25 is threadedly arranged inside the furnace cover 1. After the cooling liquid flows through the circulation chamber 25, the inner cavity of the furnace cover 1 can be cooled, thereby reducing the cooling time of the synthesis device. This solves the problem that after the existing silicon carbide powder synthesis device heats the powder made by mixing silicon powder and carbon powder to prepare silicon carbide powder, it usually waits for the silicon carbide powder to cool naturally before opening the furnace cover to collect the silicon carbide powder. This collection method is not only inefficient, but also affects the production capacity of silicon carbide powder. Embodiment 2
[0027] like Figures 1 to 7 As shown, a cross bar 14 is installed inside the upper end of the heat-insulating shell 6 , two clamping blocks 24 are symmetrically installed on the upper end surface of the cross bar 14 , and a heater 12 is fixedly installed between the two clamping blocks 24 , and the heater 12 is plugged into the heating chamber 11 .
[0028] like Figure 3 , Figure 4 and Figure 6 As shown, a threaded joint 19 is provided at the upper end of the heater 12 , an upper electrode 10 is installed on the upper wall of the inner cavity of the furnace cover 1 , a threaded interface 22 is provided inside the lower end of the upper electrode 10 , and the threaded joint 19 is threadedly connected with the threaded interface 22 .
[0029] like Figures 1 to 7 As shown, an insert block 20 is provided at the lower end of the heater 12 , a lower electrode 9 is installed at the bottom of the inner cavity of the furnace base 2 , a slot 21 is provided at the upper end of the lower electrode 9 , and the insert block 20 is plugged into the slot 21 .
[0030] Specifically, when preparing silicon carbide powder, the heater 12 is fixed to the upper electrode 10 by using the threaded joint 19 and the threaded interface 22, and then the furnace cover 1 is used to connect with the furnace base 2. At the same time, the furnace cover 1 drives the heater 12 to be inserted into the heating chamber 11, and the heater 12 drives the plug 20 to be inserted into the inner cavity of the slot 21, so that the heater 12 is connected to the lower electrode 9, and then the heater 12 is used to diffusely heat the surrounding area with the heating chamber 11 as the axis, thereby improving the uniformity of the thermal field. At the same time, the induction heater 13 is started to heat the graphite crucible 7 from the outside, so that the powder in the graphite crucible 7 can be heated evenly, which solves the problem that when the existing silicon carbide powder synthesis device heats the silicon carbide powder, the radial gradient of the crucible is large when only the induction heater is used for heating. As the loading amount increases, the diameter of the crucible also increases continuously, and the temperature difference between the edge and the core of the powder becomes larger and larger, resulting in serious carbonization of the outer side of the powder, while the reaction in the center of the powder cannot be completely carried out.
[0031] like Figure 3 , Figure 4 and Figure 6 As shown, a copper electrode 8 is installed on the upper wall of the inner cavity of the furnace cover 1, and the copper electrode 8 is electrically connected to the upper electrode 10, and a plurality of induction heaters 13 are installed on the lower end surface of the copper electrode 8.
[0032] like Figure 3 , Figure 4 and Figure 6 As shown, a copper electrode 8 is provided at the bottom of the inner cavity of the furnace base 2, and the copper electrode 8 is electrically connected to the lower electrode 9.
[0033] like Figure 1 and Figure 6 As shown, a plurality of clamping blocks 3 are fixedly connected to the outside of the furnace cover 1 , a plurality of buckles 4 are fixedly connected to the outside of the furnace base 2 , and the clamping blocks 3 are buckled with the buckles 4 .
[0034] like Figures 1 to 7 As shown, the upper electrode 10 and the lower electrode 9 are both graphite electrodes, and the upper end of the upper electrode 10 is threadedly connected to the copper electrode 8.
[0035] Working principle: when preparing silicon carbide powder, the furnace cover 1 and the furnace base 2 are disassembled and separated, and then the heat-insulating shell 6 in the inner cavity of the furnace cover 1 is opened, and the powder made by mixing silicon powder and carbon powder is put into the graphite crucible 7, and the graphite crucible 7 is a hollow cylinder, and the hole in the center is a heating chamber 11, and then when the graphite crucible 7 is heated, the heat can be diffused to the surroundings in a cylindrical ring shape, so that the powder made by mixing silicon powder and carbon powder in the inner cavity of the graphite crucible 7 is evenly heated, and the temperature difference of the powder is prevented from being too large, which leads to the appearance of silicon inclusions and carbon inclusions, and in the powder After the heating is completed, the external hose is connected to the drain port 27, and the external water pump is used to extract the coolant in the circulation chamber 25, and the coolant is pumped into the circulation chamber 25 through the connecting port 26. The circulation chamber 25 is threadedly arranged inside the furnace cover 1, and then after the coolant flows through the circulation chamber 25, the inner cavity of the furnace cover 1 can be quickly cooled by conducting cooling, so that the heated and synthesized silicon carbide powder is quickly cooled down, and then the synthesized silicon carbide powder is collected by opening the furnace cover 1, and the new powder made by mixing silicon powder and carbon powder is replaced, thereby improving the production efficiency of silicon carbide powder; When preparing silicon carbide powder, the heater 12 is fixed to the upper electrode 10 by using the threaded joint 19 and the threaded interface 22, and then the furnace cover 1 is used to dock with the furnace base 2. At the same time, the furnace cover 1 drives the heater 12 to be inserted into the heating chamber 11, and the heater 12 drives the plug 20 to be inserted into the inner cavity of the slot 21, so that the heater 12 is connected to the lower electrode 9, and then the heater 12 is used to diffuse the heating around the heating chamber 11 as the axis, thereby improving the uniformity of the thermal field, and at the same time, the induction heater 13 is started to heat the graphite crucible 7 from the outside, so that the powder in the graphite crucible 7 can be evenly heated; After the powder material made by mixing silicon powder and carbon powder is heated, cooling liquid is poured into the inner cavity of the water inlet 15, and the cooling liquid flows into the cooling cavity 17 through the water inlet 15, and the inner wall of the cooling cavity 17 is provided with a threaded liquid guide plate 18, so that the cooling liquid flowing into the inner cavity of the cooling cavity 17 flows along the threaded liquid guide plate 18 in a threaded manner, thereby cooling the entire graphite crucible 7, and after the cooling liquid flows to the tail end of the cooling cavity 17, it flows into the inlet conduit 28 through the return water port 23, and at the same time flows into the inner cavity of the inlet connecting port 26 through the conduit 28, and then an external water pump is used to extract the cooling liquid in the circulation cavity 25, and the cooling liquid is pumped into the circulation cavity 25 through the connecting port 26, and the circulation cavity 25 is threadedly arranged inside the furnace cover 1, and after the cooling liquid flows through the circulation cavity 25, the inner cavity of the furnace cover 1 can be cooled by conduction, thereby increasing the cooling time of the synthesis device.
[0036] The above shows and describes the basic principles, main features and advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited to the above embodiments. The above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, which fall within the scope of the present invention. The scope of protection of the present invention is defined by the attached claims and their equivalents.
Claims
1. A silicon carbide powder synthesis device, characterized in that: The furnace hood (1) and the furnace base (2) are connected to each other, a support frame (5) is installed at the bottom of the inner cavity of the furnace base (2), a heat-insulating shell (6) is installed at the upper end of the support frame (5), and the heat-insulating shell (6) is made of short-fiber hard felt, a graphite crucible (7) is installed in the inner cavity of the heat-insulating shell (6), a heating chamber (11) is arranged in the middle of the inner cavity of the graphite crucible (7), and a water-cooling structure is arranged inside the furnace hood (1); The water cooling structure comprises a circulation chamber (25) provided inside the furnace cover (1), the circulation chamber (25) being arranged in a threaded manner, a connecting port (26) being provided on the inner wall of the furnace cover (1), and the connecting port (26) being in communication with one end of the circulation chamber (25), and a drainage port (27) being provided on one side of the upper end surface of the furnace cover (1), and the drainage port (27) being in communication with one end of the circulation chamber (25).
2. A silicon carbide powder synthesis device according to claim 1, characterized in that: A cooling cavity (17) is provided inside the heat-insulating outer shell (6), a threaded liquid guide plate (18) is fixedly connected to the inner wall of the cooling cavity (17), and a water inlet (15) is provided at the upper end of the heat-insulating outer shell (6), and the water inlet (15) is in communication with the cooling cavity (17).
3. A silicon carbide powder synthesis device according to claim 2, characterized in that: A water return port (23) is provided on the outside of the heat-insulating outer shell (6), the water return port (23) being in communication with the cooling chamber (17), a conduit (28) being fixedly connected to the outside of the water return port (23), and one end of the conduit (28) being fixedly mounted to the communication port (26).
4. The silicon carbide powder synthesis device according to claim 1, characterized in that: A cross bar (14) is installed inside the upper end of the heat-insulating outer shell (6), two clamping blocks (24) are symmetrically installed on the upper end surface of the cross bar (14), and a heater (12) is fixedly installed between the two clamping blocks (24), and the heater (12) is plugged into the interior of the heating chamber (11).
5. The silicon carbide powder synthesis device according to claim 4, characterized in that: The upper end of the heater (12) is provided with a threaded joint (19), an upper electrode (10) is mounted on the upper wall of the inner cavity of the furnace cover (1), a threaded interface (22) is provided inside the lower end of the upper electrode (10), and the threaded joint (19) is threadedly connected to the threaded interface (22).
6. The silicon carbide powder synthesis device according to claim 5, characterized in that: An insert block (20) is provided at the lower end of the heater (12), a lower electrode (9) is installed at the bottom of the inner cavity of the furnace base (2), a slot (21) is provided at the upper end of the lower electrode (9), and the insert block (20) is plugged into the slot (21).
7. The silicon carbide powder synthesis device according to claim 5, characterized in that: A copper electrode (8) is installed on the upper wall of the inner cavity of the furnace cover (1), and the copper electrode (8) is electrically connected to the upper electrode (10). A plurality of induction heaters (13) are installed on the lower end surface of the copper electrode (8).
8. The silicon carbide powder synthesis device according to claim 6, characterized in that: A copper electrode (8) is provided at the bottom of the inner cavity of the furnace base (2), and the copper electrode (8) is electrically connected to a lower electrode (9).
9. The silicon carbide powder synthesis device according to claim 1, characterized in that: The furnace cover (1) is fixedly connected to a plurality of clamping blocks (3) on the outside, the furnace base (2) is fixedly connected to a plurality of buckles (4) on the outside, and the clamping blocks (3) are clamped to the buckles (4).
10. The silicon carbide powder synthesis device according to claim 6, characterized in that: The upper electrode (10) and the lower electrode (9) are both graphite electrodes, and the upper end of the upper electrode (10) is threadedly connected to the copper electrode (8).
