High-speed current commutation control circuit
Through the high-speed current commutation control circuit, the current switching is achieved using high-speed transistors and Schottky diodes, which solves the problem that the relay size cannot be reduced and improves the measurement density and current switching speed.
Patent Information
- Application Number
- CN202411323800.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-23
- Publication Date
- 2025-01-03
AI Technical Summary
In the traditional current commutation implementation method, the relay volume cannot continue to shrink, which limits the measurement density in the test and measurement field.
A high-speed current commutation control circuit is designed, including a commutation bridge circuit, a current mirror circuit and a load circuit. The current switching is achieved using high-speed transistors and Schottky diodes, and the high-speed switching of current is controlled through the commutation pulse signal.
High-speed commutation control of current is realized, replacing the relay method, improving the number of measurement channels and measurement density, and providing high-speed switching of sinking and pulling current.
Smart Images
Figure CN119254013A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of instrumentation test and measurement integrated circuits (ATE), and in particular to a high-speed current commutation control circuit. Background Art
[0002] Traditional current commutation is mostly achieved by changing the connection mode of certain components in the circuit to change the direction of the current. Relays or power field effect transistors are commonly used to provide high-resistance open circuits or low-resistance paths in the circuit. This has been widely used in electronic power. For example, it controls the current of motors to achieve energy conversion and motion control. In the field of test and measurement, especially in the field of high-density integrated circuit automatic testing, the size of relays can no longer be reduced to increase the measurement density. Summary of the invention
[0003] The present application provides a high-speed current commutation control circuit, which can solve the problem of measurement density limitation in related technologies.
[0004] In order to solve the technical problems described in the background technology, the present application provides a high-speed current commutation control circuit, the high-speed current commutation control circuit comprising: a commutation bridge circuit, a current mirror circuit and a load circuit connected in sequence; the commutation bridge circuit comprises a first current switching circuit unit and a second current switching circuit unit; the current mirror circuit comprises a first current mirror and a second current mirror; The first current switching circuit unit includes a first current path and a second current path; an input end of the first current path and an input end of the second current path are connected to a first current source CS - P, the output end of the first current path is connected to the excitation side of the first current mirror, and the response amplification side of the first current mirror is connected to the load circuit; the output end of the second current path is connected to the first voltage source VEE; The second current switching circuit unit includes a third current path and a fourth current path; the output end of the third current path and the output end of the fourth current path are connected to the second current source CS - N, the input end of the third current path is connected to the excitation side of the second current mirror, and the response amplification side of the second current mirror is connected to the load circuit; the input end of the fourth current path is connected to the second voltage source VCC; The control end of the first current path and the control end of the third current path are connected to a DC voltage source VCOM; The control end of the second current path and the control end of the fourth current path are connected to the commutation pulse signal V - ctrl ; The first current source CS - P provides a first switching current I CS-P, the second current source CS - N provides a second switching current I CS-N , the pulse signal V - ctrl controls the first switching current I CS-P Or the second switching current I CS-N It flows out of the commutation bridge circuit, reaches the current mirror circuit, and is output to the load circuit after being amplified by the current mirror circuit.
[0005] Optionally, the commutation pulse signal V - ctrl includes alternating high level and low level, the voltage value of the high level is greater than the voltage value of the DC voltage source VCOM, and the voltage value of the low level is less than the voltage value of the DC voltage source VCOM.
[0006] Optionally, the first current path includes a first Schottky diode and a first BTJ device; The input end of the first Schottky diode is the input end of the first current path, connected to the first current source CS - P; The first BTJ device is a PNP transistor, the emitter of the first BTJ device is connected to the output end of the first Schottky diode, the collector of the first BTJ device is the output end of the first current path, connected to the excitation side of the first current mirror, and the base of the first BTJ device is the control end of the first current path, connected to the DC voltage source VCOM.
[0007] Optionally, the second current path includes a second Schottky diode and a second BTJ device; The input end of the second Schottky diode is the input end of the second current path, connected to the first current source CS - P; The second BTJ device is a PNP transistor, the emitter of the second BTJ device is connected to the output end of the second Schottky diode, the collector of the second BTJ device is the output end of the second current path, connected to the first voltage source VEE, and the base of the second BTJ device is the control end of the second current path, connected to the commutation pulse signal V - ctrl.
[0008] Optionally, the third current path includes a third Schottky diode and a third BTJ device; The output end of the third Schottky diode is the output end of the third current path, connected to the third current source CS - N; The third BTJ device is an NPN transistor, the emitter of the third BTJ device is connected to the input end of the first Schottky diode, the collector of the third BTJ device is the input end of the third current path, connected to the excitation side of the second current mirror, and the base of the third BTJ device is the control end of the third current path, connected to the DC voltage source VCOM.
[0009] Optionally, the fourth current path includes a fourth Schottky diode and a fourth BTJ device; The output end of the fourth Schottky diode is the output end of the fourth current path, connected to the second current source CS - N; The fourth BTJ device is an NPN transistor, the emitter of the fourth BTJ device is connected to the input end of the second Schottky diode, the collector of the fourth BTJ device is the input end of the fourth current path, connected to the second voltage source VCC, the base of the fourth BTJ device is the control end of the fourth current path, connected to the commutation pulse signal V - ctrl.
[0010] Optionally, the first switching current I CS-P The second switching current I CS-N Equal in size.
[0011] Optionally, the load circuit includes a resistor and a device under test, the response amplification side of the first current mirror is connected to the response amplification side of the second current mirror and is connected in series to one end of the resistor, and the other end of the resistor is connected to the device under test.
[0012] Optionally, the other end of the resistor is connected to a control end of the second current path and a control end of the fourth current path respectively through a buffer circuit.
[0013] Optionally, the first switching current I CS-P Flowing out of the commutation bridge circuit, reaching the current mirror circuit, being amplified by the current mirror circuit and output to the load circuit, generating a pull current in the load circuit; The second switching current I CS-N Flowing out of the commutation bridge circuit, reaching the current mirror circuit, being amplified by the current mirror circuit and output to the load circuit, generating a sink current in the load circuit; The pulse signal V - ctrl controls the switching of the source current and the sink current flowing through the load circuit.
[0014] The technical solution of the present application includes at least the following advantages: the control circuit that can realize high-speed current commutation can well replace the switching of the relay mode. It is realized by using modern integrated circuit technology to maximize the number of measurement channels and measurement density. High-speed transistors and Schottky diodes are used as the main elements to form the circuit and realize current switching. Their high-speed switching leads to high-speed switching of the output current, so that the required high-speed switching sink current and pull current are obtained on the load (device under test). BRIEF DESCRIPTION OF THE DRAWINGS
[0015] In order to more clearly illustrate the specific implementation methods of the present application or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.
[0016] Figure 1 A structural block diagram of a high-speed current commutation control circuit provided by an embodiment of the present application is shown; Figure 2 Shows Figure 1 A schematic diagram of the circuit structure of an embodiment of a high-speed current commutation control circuit is shown; Figure 3 Shows Figure 2 The illustrated embodiment is a schematic diagram of current flow direction of a pull current generated by a load circuit; Figure 4 Shows Figure 2 The illustrated embodiment is a schematic diagram of current flow when a current is generated by a load circuit; Figure 5 Shows Figure 1 A schematic diagram of the circuit structure of another embodiment of the high-speed current switching control circuit shown in FIG. Figure 6 Shows Figure 1 Schematic diagram of the circuit structure of other embodiments of the high-speed current commutation control circuit shown. DETAILED DESCRIPTION
[0017] The following will be combined with the accompanying drawings to clearly and completely describe the technical solutions in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.
[0018] In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present application and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present application. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.
[0019] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can also be the internal connection of two components, it can be a wireless connection, or it can be a wired connection. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.
[0020] In addition, the technical features involved in the different embodiments of the present application described below can be combined with each other as long as they do not conflict with each other.
[0021] Figure 1 The structure block diagram of the high-speed current commutation control circuit provided by an embodiment of the present application is shown. Figure 1 It can be seen that the high-speed current commutation control circuit includes a commutation bridge circuit 100, a current mirror circuit 200 and a load circuit 300; the commutation bridge circuit 100 includes a first current switching circuit unit 110 and a second current switching circuit unit 120; the current mirror circuit 200 includes a first current mirror 210 and a second current mirror 220.
[0022] The first current switching circuit unit 110 includes a first current path 111 and a second current path 112; an input end of the first current path 111 and an input end of the second current path 112 are connected to a first current source CS - P, the output end of the first current path 111 is connected to the excitation side of the first current mirror 210, and the response amplification side of the first current mirror 210 is connected to the load circuit 300; the output end of the second current path 112 is connected to the first voltage source VEE.
[0023] The second current switching circuit unit 120 includes a third current path 121 and a fourth current path 122; the output end of the third current path 121 and the output end of the fourth current path 122 are connected to the second current source CS -N, the input end of the third current path 121 is connected to the excitation side of the second current mirror 220, and the response amplification side of the second current mirror 220 is connected to the load circuit 300; the input end of the fourth current path 122 is connected to the second voltage source VCC.
[0024] The control end of the first current path 111 and the control end of the third current path 121 are connected to a DC voltage source VCOM. The control end of the second current path 112 and the control end of the fourth current path 122 are connected to the commutation pulse signal V - ctrl.
[0025] The first current source CS - P provides a first switching current I CS-P , the second current source CS - N provides a second switching current I CS-N , the pulse signal V - ctrl controls the first switching current I CS-P Or the second switching current I CS-N Flows out of the commutation bridge circuit 100 .
[0026] In this embodiment, a high-speed current switching bridge composed of a first current switching circuit unit 110 and a second current switching circuit unit 120 is used to switch the first current source CS - P provides a first switching current I CS-P to the first current switching circuit unit 110, the second current source CS - N provides a second switching current I CS-N To the second current switching circuit unit 120, the pulse signal V - ctrl controls the first switching current I CS-P Or the second switching current I CS-N flows out of the commutation bridge circuit 100, reaches the current mirror circuit 200, and is amplified by the current mirror circuit 200 and output to the load circuit 300. CS-P The load circuit 300 generates a pull current, and the second switching current I CS-N The load circuit 300 generates a sink current. - The high-speed switching of the ctrl high and low levels enables the source current and the sink current flowing through the load circuit 300 to switch at a high speed.
[0027] It should be noted that the switching frequency of the source current and the sink current flowing through the load circuit 300 depends on the pulse signal V - The steady-state maintenance time of the steady-state source current and steady-state sink current depends on the pulse signal V - The width of the high level and the width of the low level in ctrl.
[0028] Among them, the commutation pulse signal V - ctrl includes alternating high level and low level, the voltage value of the high level is greater than the voltage value of the DC voltage source VCOM, and the voltage value of the low level is less than the voltage value of the DC voltage source VCOM. The first switching current I CS-P The second switching current I CS-N Equal in size.
[0029] Figure 2 Shows Figure 1 The circuit structure diagram of an embodiment of the high-speed current commutation control circuit shown in FIG. Figure 2 As can be seen from the figure, the first current path 111 of the high-speed current commutation control circuit includes a first Schottky diode D1 and a first BTJ device Q1. The input end of the first Schottky diode D1 is the input end of the first current path 111, which is connected to the first current source CS - P.
[0030] The first BTJ device Q1 is a PNP transistor, the emitter of the first BTJ device Q1 is connected to the output end of the first Schottky diode D1, the collector of the first BTJ device Q1 is the output end of the first current path 111, connected to the excitation side of the first current mirror 210, and the base of the first BTJ device Q1 is the control end of the first current path 111, connected to the DC voltage source VCOM.
[0031] The second current path 112 includes a second Schottky diode D2 and a second BTJ device Q2. The input end of the second Schottky diode D2 is the input end of the second current path 112, connected to the first current source CS - P.
[0032] The second BTJ device Q2 is a PNP transistor. The emitter of the second BTJ device Q2 is connected to the output end of the second Schottky diode D2. The collector of the second BTJ device Q2 is the output end of the second current path 112 and is connected to the first voltage source VEE. The base of the second BTJ device Q2 is the control end of the second current path 112 and is connected to the commutation pulse signal V - ctrl.
[0033] The third current path 121 includes a third Schottky diode D3 and a third BTJ device Q3; the output end of the third Schottky diode D3 is the output end of the third current path 121, connected to the third current source CS - N.
[0034] The third BTJ device Q3 is an NPN transistor, the emitter of the third BTJ device Q3 is connected to the input end of the first Schottky diode D1, the collector of the third BTJ device Q3 is the input end of the third current path 121, connected to the excitation side of the second current mirror 220, and the base of the third BTJ device Q3 is the control end of the third current path 121, connected to the DC voltage source VCOM.
[0035] The fourth current path 122 includes a fourth Schottky diode D4 and a fourth BTJ device Q4; the output end of the fourth Schottky diode D4 is the output end of the fourth current path 122, connected to the second current source CS - N.
[0036] The fourth BTJ device Q4 is an NPN transistor, the emitter of the fourth BTJ device Q4 is connected to the input end of the second Schottky diode D2, the collector of the fourth BTJ device Q4 is the input end of the fourth current path 122, connected to the second voltage source VCC, the base of the fourth BTJ device Q4 is the control end of the fourth current path 122, connected to the commutation pulse signal V - ctrl.
[0037] The load circuit 300 includes a resistor and a device under test. The response amplification side of the first current mirror 210 is connected to the response amplification side of the second current mirror 220 and connected in series with one end of the resistor Rs. The other end of the resistor Rs is connected to the device under test V - RL. Exemplarily, the resistance value of the resistor Rs may be 50Ω.
[0038] Figure 3 Shows Figure 2 The embodiment shown is a schematic diagram of the current flow direction of the load circuit 300 to generate a pull current. Figure 3 It can be seen that in the commutation pulse signal V - When ctrl is at a high level, the commutation pulse signal V - When the voltage value of ctrl is higher than the voltage value of the DC voltage source VCOM, the first current path 111 is turned on and the second current path 112 is turned off, that is, the first Schottky diode D1 and the first BTJ device Q1 are turned on, and the second Schottky diode D2 and the second BTJ device Q2 are turned off, so that the first current source CS - The first switching current I generated by P CS-P After passing through the first Schottky diode D1 and the first BTJ device Q1 in the first current path 111, the current flows into the first current mirror 210 to form Figure 3At the same time, the third current path 121 is turned off, and the fourth current path 122 is turned on, that is, the third Schottky diode D3 and the third BTJ device Q3 are turned off, the fourth Schottky diode D4 and the fourth BTJ device Q4 are turned on, and the second current source CS - N can only obtain the required current from the second voltage source VCC through the fourth BTJ device Q4 and the fourth Schottky diode D4 of the fourth current path 122, forming Figure 3 Finally, a source current is generated in the load circuit 300 to form a first steady state.
[0039] Figure 4 Shows Figure 2 The embodiment shown is a schematic diagram of current flow for generating a sink current for the load circuit 300. Figure 4 It can be seen that in the commutation pulse signal V - When ctrl is at a low level, the commutation pulse signal V - When the voltage value of ctrl is lower than the voltage value of the DC voltage source VCOM, the third current path 121 is turned on and the fourth current path 122 is turned off, that is, the third Schottky diode D3 and the third BTJ device Q3 are turned on, and the fourth Schottky diode D4 and the fourth BTJ device Q4 are turned off, so that the second current source CS - The second switching current I generated by N CS-N After passing through the third Schottky diode D3 and the third BTJ device Q3 in the third current path 121, the current flows into the second current mirror 220 to form Figure 4 At the same time, the first current path 111 is turned off, and the second current path 112 is turned on, that is, the first Schottky diode D1 and the first BTJ device Q1 are turned off, the second Schottky diode D2 and the second BTJ device Q2 are turned on, and the first current source CS - P can only obtain the required current from the first voltage source VEE through the second BTJ device Q2 and the second Schottky diode D2 of the second current path 112, forming Figure 3 Finally, a sink current is generated in the load circuit 300 to form a second steady state.
[0040] Figure 5 Shows Figure 1 The circuit structure diagram of another embodiment of the high-speed current commutation control circuit shown in FIG. Figure 5 It can be seen that Figure 5 The embodiment shown is in Figure 2 Based on the illustrated embodiment, the other end of the resistor Rs is connected to the control end of the second current path 112 and the control end of the fourth current path 122 through a buffer circuit Buffer.
[0041] Figure 6 Shows Figure 1 The circuit structure diagram of other embodiments of the high-speed current commutation control circuit shown in FIG. Figure 6 It can be seen that this embodiment Figure 2 On the basis of the embodiment shown, the first BTJ device Q1 can be replaced by the first MOS tube M1, the second BTJ device Q2 can be replaced by the second MOS tube M2, the first MOS tube M1 and the second MOS tube M2 are both P-type MOS tubes. The third BTJ device Q3 can be replaced by the third MOS tube M3, the fourth BTJ device Q4 can be replaced by the fourth MOS tube M4, the third MOS tube M3 and the fourth MOS tube M4 are both N-type MOS tubes.
[0042] The source of the first MOS transistor M1 is connected to the output end of the first Schottky diode D1, the drain of the first MOS transistor M1 is the output end of the first current path 111, and is connected to the excitation side of the first current mirror 210, and the gate of the first MOS transistor M1 is the control end of the first current path 111, and is connected to the DC voltage source VCOM.
[0043] The source of the second MOS transistor M2 is connected to the output end of the second Schottky diode D2, the drain of the second MOS transistor M2 is the output end of the second current path 112, connected to the first voltage source VEE, and the gate of the second MOS transistor M2 is the control end of the second current path 112, connected to the commutation pulse signal V - ctrl.
[0044] The source of the third MOS tube M3 is connected to the input end of the first Schottky diode D1, the drain of the third MOS tube M3 is the input end of the third current path 121, connected to the excitation side of the second current mirror 220, and the gate of the third MOS tube M3 is the control end of the third current path 121, connected to the DC voltage source VCOM.
[0045] The source of the fourth MOS tube M4 is connected to the input end of the second Schottky diode D2, the drain of the fourth MOS tube M4 is the input end of the fourth current path 122, connected to the second voltage source VCC, and the gate of the fourth MOS tube M4 is the control end of the fourth current path 122, connected to the commutation pulse signal V - ctrl.
[0046] when Figures 1 to 6 The first current source CS in the high-speed current switching control circuit shown in any one of the figures - P and the second current source CS - N is adjustable, and the high-speed current switching control circuit is adjustable. Exemplarily, the first current source CS - P and the second current source CS -N can use a 16-bit digitally adjustable current source. Through simulation, it can be determined that when the first current source CS - When P changes, the steady-state source current of the output changes with the first current source CS - When the second current source CS - When N changes, the output steady-state sink current increases with the second current source CS. - It changes linearly with the change of N.
[0047] In the pulse signal V - When ctrl switches from high level to low level, or from low level to high level, there must be a period of potential close to the voltage value of the DC voltage source VCOM, and there is a moment when the voltage value is equal to the voltage value of the DC voltage source VCOM. The absolute value of the voltage difference is within 100mV (|V - RL-VCOM|<100mV), the sink current and source current are in the switching transition zone. - When ctrl=VCOM, theoretically due to the first switching current I CS-P = the second switching current I CS-N , that is, all the sinking current is absorbed by the sourcing current, and at this time there is no current in the load circuit 300.
[0048] The high-speed current switching control circuit provided by the present application can well replace the switching of the relay mode, and can be implemented by modern integrated circuit technology, maximizing the number of measurement channels and measurement density. High-speed transistors and Schottky diodes are used as the main elements for forming the circuit and realizing current switching. Their high-speed switching leads to high-speed switching of the output current, thereby obtaining the required high-speed switching sink current and pull current on the load (device under test).
[0049] Obviously, the above embodiments are merely examples for the purpose of clear explanation, and are not intended to limit the implementation methods. For those skilled in the art, other different forms of changes or modifications can be made based on the above description. It is not necessary and impossible to list all the implementation methods here. The obvious changes or modifications derived therefrom are still within the scope of protection created by this application.
Claims
1. A high-speed current commutation control circuit, characterized in that: The high-speed current commutation control circuit comprises: a commutation bridge circuit, a current mirror circuit and a load circuit connected in sequence; the commutation bridge circuit comprises a first current switching circuit unit and a second current switching circuit unit; the current mirror circuit comprises a first current mirror and a second current mirror; The first current switching circuit unit includes a first current path and a second current path; an input end of the first current path and an input end of the second current path are connected to a first current source CS - P, the output end of the first current path is connected to the excitation side of the first current mirror, and the response amplification side of the first current mirror is connected to the load circuit; the output end of the second current path is connected to the first voltage source VEE; The second current switching circuit unit includes a third current path and a fourth current path; the output end of the third current path and the output end of the fourth current path are connected to the second current source CS - N, the input end of the third current path is connected to the excitation side of the second current mirror, and the response amplification side of the second current mirror is connected to the load circuit; the input end of the fourth current path is connected to the second voltage source VCC; The control end of the first current path and the control end of the third current path are connected to a DC voltage source VCOM; The control end of the second current path and the control end of the fourth current path are connected to the commutation pulse signal V - ctrl ; The first current source CS - P provides a first switching current I CS-P , the second current source CS - N provides a second switching current I CS-N , the pulse signal V - ctrl controls the first switching current I CS-P Or the second switching current I CS-N It flows out of the commutation bridge circuit, reaches the current mirror circuit, and is output to the load circuit after being amplified by the current mirror circuit.
2. The high-speed current commutation control circuit according to claim 1, characterized in that: The commutation pulse signal V - ctrl includes alternating high level and low level, the voltage value of the high level is greater than the voltage value of the DC voltage source VCOM, and the voltage value of the low level is less than the voltage value of the DC voltage source VCOM.
3. The high-speed current commutation control circuit according to claim 1, characterized in that: The first current path includes a first Schottky diode and a first BTJ device; The input end of the first Schottky diode is the input end of the first current path, connected to the first current source CS - P; The first BTJ device is a PNP transistor, the emitter of the first BTJ device is connected to the output end of the first Schottky diode, the collector of the first BTJ device is the output end of the first current path, connected to the excitation side of the first current mirror, and the base of the first BTJ device is the control end of the first current path, connected to the DC voltage source VCOM.
4. The high-speed current commutation control circuit according to claim 1, characterized in that: The second current path includes a second Schottky diode and a second BTJ device; The input end of the second Schottky diode is the input end of the second current path, connected to the first current source CS - P; The second BTJ device is a PNP transistor, the emitter of the second BTJ device is connected to the output end of the second Schottky diode, the collector of the second BTJ device is the output end of the second current path, connected to the first voltage source VEE, and the base of the second BTJ device is the control end of the second current path, connected to the commutation pulse signal V - ctrl.
5. The high-speed current commutation control circuit according to claim 1, characterized in that: The third current path includes a third Schottky diode and a third BTJ device; The output end of the third Schottky diode is the output end of the third current path, connected to the third current source CS - N; The third BTJ device is an NPN transistor, the emitter of the third BTJ device is connected to the input end of the first Schottky diode, the collector of the third BTJ device is the input end of the third current path, connected to the excitation side of the second current mirror, and the base of the third BTJ device is the control end of the third current path, connected to the DC voltage source VCOM.
6. The high-speed current commutation control circuit according to claim 1, characterized in that: The fourth current path includes a fourth Schottky diode and a fourth BTJ device; The output end of the fourth Schottky diode is the output end of the fourth current path, connected to the second current source CS - N; The fourth BTJ device is an NPN transistor, the emitter of the fourth BTJ device is connected to the input end of the second Schottky diode, the collector of the fourth BTJ device is the input end of the fourth current path, connected to the second voltage source VCC, the base of the fourth BTJ device is the control end of the fourth current path, connected to the commutation pulse signal V - ctrl.
7. The high-speed current commutation control circuit according to claim 1, characterized in that: The first switching current I CS-P The second switching current I CS-N Equal in size.
8. The high-speed current commutation control circuit according to claim 1, characterized in that: The load circuit includes a resistor and a device under test, the response amplification side of the first current mirror is connected to the response amplification side of the second current mirror and is connected in series with one end of the resistor, and the other end of the resistor is connected to the device under test.
9. The high-speed current commutation control circuit according to claim 8, characterized in that: The other end of the resistor is connected to the control end of the second current path and the control end of the fourth current path respectively through a buffer circuit.
10. The high-speed current commutation control circuit according to claim 1, characterized in that: The first switching current I CS-P Flowing out of the commutation bridge circuit, reaching the current mirror circuit, being amplified by the current mirror circuit and output to the load circuit, generating a pull current in the load circuit; The second switching current I CS-N Flowing out of the commutation bridge circuit, reaching the current mirror circuit, being amplified by the current mirror circuit and output to the load circuit, generating a sink current in the load circuit; The pulse signal V - ctrl controls the switching of the source current and the sink current flowing through the load circuit.