Hard alloy polishing method

Abstract

The invention provides a hard alloy polishing method which comprises the following steps: clamping a hard alloy on a machine tool, and carrying out rough polishing treatment on the surface of the hard alloy by adopting grinding abrasive paper, so that annular grains are formed on the surface of the hard alloy; and then the polishing wheel coated with the grinding paste is used for conducting fine polishing treatment on the hard alloy. The hard alloy is sequentially subjected to rough polishing and fine polishing, the surface roughness of the alloy is effectively reduced, meanwhile, the surface glossiness of the alloy is improved, and the polishing quality is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of material polishing and relates to a polishing method for hard alloy. Background Art

[0002] Cemented carbide is widely used in the field of semiconductor sputtering targets. A good initial surface state of the sputtering target is a prerequisite for obtaining excellent thin films. It must have excellent uniformity, less abnormal discharge, and smaller particle generation. However, due to the high hardness and wear resistance of cemented carbide, this poses great difficulties for the surface polishing process.

[0003] Traditionally, lathe processing is used to control the surface quality of the target blank. Due to the hard and brittle characteristics of cemented carbide, high requirements are placed on the quality of turning tools and tools are more expensive. At the same time, problems such as chip jamming and corner collapse are prone to occur during processing, and the processing stability is poor. The method of rough processing with a grinder and abrasive belt polishing can improve the surface well, but the abrasive belt polishing texture is more obvious and the glossiness is uneven.

[0004] However, the existing technology mostly uses CMP polishing to process cemented carbide, which is costly, takes a long time to polish, has a complex polishing process and is difficult to operate. Therefore, how to simplify the polishing difficulty of cemented carbide and obtain a surface appearance with uniform texture has become a difficult problem. Summary of the invention

[0005] In view of the shortcomings of the prior art, the purpose of the present invention is to provide a method for polishing cemented carbide, which has high stability, and the surface of the cemented carbide after polishing has uniform texture, high gloss and low roughness.

[0006] To achieve this object, the present invention adopts the following technical solutions:

[0007] The present invention provides a method for polishing cemented carbide, the method comprising:

[0008] The cemented carbide is clamped on a machine tool, and the surface of the cemented carbide is roughly polished with abrasive paper to form annular patterns on the surface of the cemented carbide;

[0009] The cemented carbide is then fine-polished using a polishing wheel coated with abrasive paste.

[0010] The invention firstly performs rough polishing by using abrasive paper, and then performs fine polishing by using a combination of a polishing wheel and abrasive paste, thereby obtaining uniform annular textures, effectively reducing the surface roughness of the cemented carbide, and improving the surface quality.

[0011] The polishing method provided by the present invention has a wide range of applications, has no requirements on the shape and size of cemented carbide, is suitable for polishing cemented carbide materials of any type and size, and can adjust the clamping tools on the machine tool according to the specific shape and size of the cemented carbide material.

[0012] As a preferred technical solution of the present invention, in the rough polishing process, the rotation speed of the machine tool is 300-600r / min, for example, it can be 300r / min, 310r / min, 320r / min, 350r / min, 380r / min, 400r / min, 410r / min, 420r / min, 450r / min, 480r / min, 500r / min, 510r / min, 520r / min, 550r / min, 560r / min, 580r / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0013] As a preferred technical solution of the present invention, the mesh number of the grinding sandpaper is 200-600 mesh, for example, it can be 200 mesh, 220 mesh, 250 mesh, 300 mesh, 350 mesh, 380 mesh, 400 mesh, 450 mesh, 500 mesh, 520 mesh, 550 mesh or 600 mesh, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0014] Preferably, the grinding sandpaper includes any one of diamond sandpaper, aluminum oxide sandpaper, brown corundum sandpaper, ceramic corundum sandpaper, zirconium corundum sandpaper or silicon carbide sandpaper.

[0015] As a preferred technical solution of the present invention, after the rough polishing treatment, the roughness Ra of the cemented carbide surface is 0.2-0.3 μm, for example, it can be 0.2 μm, 0.21 μm, 0.22 μm, 0.23 μm, 0.24 μm, 0.25 μm, 0.26 μm, 0.27 μm, 0.28 μm, 0.29 μm or 0.3 μm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0016] As a preferred technical solution of the present invention, the Vickers hardness of the cemented carbide is greater than 1000 HV.

[0017] As a preferred technical solution of the present invention, the polishing method further comprises: during the fine polishing process, dripping an auxiliary agent onto the surface of the polishing wheel.

[0018] The invention continuously drips an auxiliary agent onto the polishing wheel coated with the abrasive paste during the fine polishing process, which can play a cooling role and make the abrasive paste evenly dispersed, thereby improving the polishing effect.

[0019] Preferably, the auxiliary agent is alcohol.

[0020] Preferably, the concentration of the alcohol is 90-95%, for example, it can be 90%, 91%, 92%, 93%, 94% or 95%, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0021] Preferably, the dripping rate of the auxiliary agent is 60 to 90 drops / min, for example, it can be 60 drops / min, 62 drops / min, 65 drops / min, 66 drops / min, 68 drops / min, 70 drops / min, 72 drops / min, 75 drops / min, 76 drops / min, 78 drops / min, 80 drops / min, 82 drops / min, 85 drops / min, 86 drops / min, 88 drops / min or 90 drops / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0022] As a preferred technical solution of the present invention, the grinding paste includes abrasive particles and a dispersion liquid.

[0023] Preferably, the particle size of the abrasive is 0.1-0.2 μm, for example, it can be 0.1 μm, 0.11 μm, 0.12 μm, 0.13 μm, 0.14 μm, 0.15 μm, 0.16 μm, 0.17 μm, 0.18 μm, 0.19 μm or 0.2 μm, but it is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0024] Preferably, the coating thickness of the abrasive paste is 0.2-0.6 mm, for example, 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.45 mm, 0.5 mm, 0.55 mm or 0.6 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0025] Preferably, the abrasive grains include any one of diamond, aluminum oxide, brown corundum and zirconium corundum, or a combination of at least two of them. Typical but non-limiting combinations include: a combination of diamond and aluminum oxide, a combination of aluminum oxide and brown corundum, a combination of brown corundum and zirconium corundum, a combination of diamond and brown corundum, a combination of diamond, brown corundum and zirconium corundum, and the like.

[0026] Preferably, the dispersion liquid is water and / or glycerol.

[0027] As a preferred technical solution of the present invention, the rotation speed of the polishing wheel is 300-600r / min, for example, it can be 300r / min, 310r / min, 320r / min, 350r / min, 380r / min, 400r / min, 410r / min, 420r / min, 450r / min, 480r / min, 500r / min, 510r / min, 520r / min, 550r / min, 560r / min, 580r / min or 600r / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0028] Preferably, the diameter of the polishing wheel is 100-150 mm, for example, it can be 100 mm, 105 mm, 110 mm, 125 mm, 115 mm, 120 mm, 125 mm, 130 mm, 135 mm, 140 mm, 145 mm or 150 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0029] Preferably, the polishing wheel is a wool wheel.

[0030] The present invention does not specifically limit the type of wool wheel, and can adopt a split-roll wool wheel or a pure wool wheel commonly used by technicians in this field, which can play a good buffering role during the polishing process and achieve a grinding and polishing effect on the cemented carbide surface.

[0031] As a preferred technical solution of the present invention, the time for the fine polishing treatment is 60 to 180 min, for example, it can be 60 min, 80 min, 90 min, 100 min, 110 min, 120 min, 130 min, 140 min, 150 min, 160 min, 170 min or 180 min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0032] Preferably, during the fine polishing process, the grinding paste is additionally coated on the surface of the polishing wheel every 20 to 30 minutes.

[0033] The interval time for supplementing the coating of the abrasive paste can be 20 min, 21 min, 22 min, 23 min, 24 min, 25 min, 26 min, 27 min, 28 min, 29 min or 30 min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0034] As a preferred technical solution of the present invention, after the fine polishing treatment, the roughness Ra of the cemented carbide surface is less than 0.2 μm.

[0035] The present invention sequentially performs rough polishing and fine polishing on cemented carbide to achieve the effects of uniform texture, high gloss and low roughness on the alloy surface, thereby effectively improving the surface quality of the cemented carbide.

[0036] The numerical range described in the present invention not only includes the point values ​​listed above, but also includes any point values ​​between the above numerical ranges that are not listed. Due to space limitations and for the sake of simplicity, the present invention no longer exhaustively lists the specific point values ​​included in the range.

[0037] Compared with the prior art, the present invention has the following beneficial effects:

[0038] The invention firstly uses abrasive sandpaper for rough polishing and then uses a combination of a polishing wheel and abrasive paste for fine polishing, which simplifies the process flow, has high stability, obtains uniform annular textures, effectively reduces the surface roughness of the cemented carbide, and improves the surface glossiness. DETAILED DESCRIPTION

[0039] The technical solution of the present invention is further illustrated below through specific implementation methods.

[0040] The present invention provides a method for polishing cemented carbide, the method comprising the following steps:

[0041] (1) Clamp the cemented carbide on the machine tool, and the Vickers hardness of the cemented carbide is greater than 1000 HV;

[0042] (2) using abrasive paper to roughly polish the surface of the cemented carbide so that annular patterns are formed on the surface of the cemented carbide, and the roughness Ra of the surface of the cemented carbide is 0.2 to 0.3 μm;

[0043] The rotation speed of the machine tool is 300-600 r / min, the mesh number of the grinding sandpaper is 200-600 mesh, and the grinding sandpaper includes any one of diamond sandpaper, aluminum oxide sandpaper, brown corundum sandpaper, ceramic corundum sandpaper, zirconium corundum sandpaper or silicon carbide sandpaper;

[0044] (3) performing fine polishing on the cemented carbide for 60 to 180 minutes using a polishing wheel coated with abrasive paste. During the fine polishing process, an auxiliary agent is dripped onto the surface of the polishing wheel to cool it down, and the abrasive paste is evenly dispersed. The abrasive paste is additionally applied to the surface of the polishing wheel every 20 to 30 minutes, so that the roughness Ra of the cemented carbide surface is less than 0.2 μm.

[0045] Among them, the rotation speed of the polishing wheel is 300-600r / min, the diameter of the polishing wheel is 100-150mm, and the polishing wheel is a wool wheel; the auxiliary agent is preferably alcohol, the concentration of the alcohol is 90-95%, and the dripping rate of the auxiliary agent is 60-90 drops / min; the grinding paste includes abrasive particles and a dispersion liquid, the particle size of the abrasive particles is 0.1-0.2μm, and the coating thickness of the grinding paste is 0.2-0.6mm; preferably, the abrasive particles include any one of diamond, aluminum oxide, brown corundum and zirconium corundum or a combination of at least two; the dispersion liquid is water and / or glycerin.

[0046] Example 1

[0047] This embodiment provides a method for polishing cemented carbide, which polishes tungsten silicon alloy, and specifically includes the following steps:

[0048] (1) Clamp the tungsten silicon alloy material on the machine tool, and the Vickers hardness of the tungsten silicon alloy is greater than 1000 HV;

[0049] (2) The surface of the tungsten silicon alloy is roughly polished using 400-mesh diamond sandpaper to form annular patterns on the surface of the tungsten silicon alloy, and the roughness Ra is 0.25 μm, and the speed of the machine tool is maintained at 350 r / min;

[0050] (3) The tungsten silicon alloy was then fine-polished for 60 minutes using a wool wheel coated with abrasive paste. The rotation speed of the wool wheel was 500 r / min, and the diameter of the polishing wheel was 120 mm. During the fine-polishing process, 95% alcohol was added to the surface of the wool wheel at a rate of 65 drops / min to cool it down. At the same time, the abrasive paste was evenly dispersed. Every 25 minutes, the abrasive paste was applied to the surface of the wool wheel to maintain a coating thickness of 0.5 mm. The abrasive paste used was composed of gold quartz abrasive grains and glycerin, and the particle size of the diamond abrasive grains was 0.15 μm.

[0051] The roughness Ra of the surface of the tungsten silicon alloy after fine polishing in this embodiment is less than 0.2 μm, and the surface glossiness is relatively high.

[0052] Example 2

[0053] This embodiment provides a method for polishing cemented carbide, which polishes tungsten silicon alloy, and specifically includes the following steps:

[0054] (1) Clamp the tungsten silicon alloy material on the machine tool, and the Vickers hardness of the tungsten silicon alloy is greater than 1000 HV;

[0055] (2) The surface of the tungsten silicon alloy was roughly polished using 300-mesh diamond sandpaper to form annular patterns on the surface of the tungsten silicon alloy, and the roughness Ra was 0.2 μm, and the speed of the machine tool was maintained at 400 r / min;

[0056] (3) The tungsten silicon alloy is then fine-polished for 120 minutes using a wool wheel coated with abrasive paste. The rotation speed of the wool wheel is 600 r / min, and the diameter of the polishing wheel is 120 mm. During the fine-polishing process, 95% alcohol is added to the surface of the wool wheel at a rate of 60 drops / min to cool it down. At the same time, the abrasive paste is evenly dispersed. Every 20 minutes, the abrasive paste is applied to the surface of the wool wheel to maintain a coating thickness of 0.3 mm. The abrasive paste used is composed of gold quartz abrasive grains and glycerin, and the particle size of the diamond abrasive grains is 0.12 μm.

[0057] The roughness Ra of the surface of the tungsten silicon alloy after fine polishing in this embodiment is less than 0.18 μm, and the surface glossiness is relatively high.

[0058] Example 3

[0059] This embodiment provides a method for polishing cemented carbide, which polishes tungsten silicon alloy, and specifically includes the following steps:

[0060] (1) Clamp the tungsten silicon alloy material on the machine tool, and the Vickers hardness of the tungsten silicon alloy is greater than 1000 HV;

[0061] (2) The surface of the tungsten silicon alloy was roughly polished using 200-mesh diamond sandpaper to form annular patterns on the surface of the tungsten silicon alloy, and the roughness Ra was 0.2 μm, and the speed of the machine tool was maintained at 550 r / min;

[0062] (3) The tungsten silicon alloy was then fine-polished for 90 minutes using a wool wheel coated with abrasive paste. The rotation speed of the wool wheel was 450 r / min, and the diameter of the polishing wheel was 110 mm. During the fine-polishing process, 95% alcohol was added to the surface of the wool wheel at a rate of 80 drops / min to cool it down. At the same time, the abrasive paste was evenly dispersed. Every 30 minutes, the abrasive paste was applied to the surface of the wool wheel to maintain a coating thickness of 0.5 mm. The abrasive paste used was composed of gold quartz abrasive grains and glycerin, and the particle size of the diamond abrasive grains was 0.16 μm.

[0063] The roughness Ra of the surface of the tungsten silicon alloy after fine polishing in this embodiment is less than 0.16 μm, and the surface glossiness is relatively high.

[0064] Example 4

[0065] This embodiment provides a method for polishing cemented carbide, which polishes tungsten silicon alloy, and specifically includes the following steps:

[0066] (1) Clamp the tungsten silicon alloy material on the machine tool, and the Vickers hardness of the tungsten silicon alloy is greater than 1000 HV;

[0067] (2) The surface of the tungsten silicon alloy was roughly polished using 500-mesh diamond sandpaper to form annular patterns on the surface of the tungsten silicon alloy, and the roughness Ra was 0.2 μm, and the speed of the machine tool was maintained at 450 r / min;

[0068] (3) The tungsten silicon alloy was then fine-polished for 180 minutes using a wool wheel coated with abrasive paste. The rotation speed of the wool wheel was 600 r / min, and the diameter of the polishing wheel was 110 mm. During the fine-polishing process, 95% alcohol was added to the surface of the wool wheel at a rate of 90 drops / min to cool it down. At the same time, the abrasive paste was evenly dispersed. Every 20 minutes, the abrasive paste was applied to the surface of the wool wheel to maintain a coating thickness of 0.6 mm. The abrasive paste used was composed of gold quartz abrasive grains and glycerin, and the particle size of the diamond abrasive grains was 0.14 μm.

[0069] The roughness Ra of the surface of the tungsten silicon alloy after fine polishing in this embodiment is less than 0.16 μm, and the surface glossiness is relatively high.

[0070] Example 5

[0071] This embodiment provides a method for polishing cemented carbide, and performs polishing treatment on tungsten silicon alloy. The difference from Embodiment 1 is that during the fine polishing treatment, alcohol is not added, and the remaining method steps are the same as those of Embodiment 1.

[0072] The roughness Ra of the surface of the tungsten silicon alloy after fine polishing in this embodiment is less than 0.2 μm, and the uniformity of the surface texture is lower than that of the tungsten silicon alloy after the treatment in Example 1.

[0073] Example 6

[0074] This embodiment provides a method for polishing cemented carbide, and performs polishing treatment on tungsten silicon alloy. The difference from Embodiment 2 is that during the fine polishing treatment, alcohol is not added, and the remaining method steps are the same as those of Embodiment 2.

[0075] The roughness Ra of the surface of the tungsten silicon alloy after fine polishing in this embodiment is less than 0.2 μm, and the uniformity of the surface texture is lower than that of the tungsten silicon alloy after the treatment in Example 2.

[0076] Comparative Example 1

[0077] This comparative example provides a method for polishing cemented carbide, and performs polishing treatment on tungsten silicon alloy. The difference from Example 1 is that the tungsten silicon alloy is not finely polished, and the remaining method steps are the same as those of Example 1.

[0078] In this comparative example, the roughness Ra of the surface of the tungsten silicon alloy after polishing is 0.25 μm, and the surface glossiness is relatively low.

[0079] Comparative Example 2

[0080] This comparative example provides a method for polishing cemented carbide, and performs polishing treatment on tungsten silicon alloy. The difference from Example 2 is that: the tungsten silicon alloy is not finely polished, and the remaining method steps are the same as those of Example 2.

[0081] In this comparative example, the roughness Ra of the surface of the tungsten silicon alloy after polishing is 0.2 μm, and the surface glossiness is relatively low.

[0082] Comparative Example 3

[0083] This comparative example provides a method for polishing cemented carbide, and performs polishing treatment on tungsten silicon alloy. The difference from Example 3 is that the tungsten silicon alloy is not finely polished, and the remaining method steps are the same as those of Example 3.

[0084] In this comparative example, the roughness Ra of the surface of the tungsten silicon alloy after polishing is 0.2 μm, and the surface glossiness is relatively low.

[0085] Comparative Example 4

[0086] This comparative example provides a method for polishing cemented carbide, and performs polishing treatment on tungsten silicon alloy. The difference from Example 1 is that the tungsten silicon alloy is not subjected to rough polishing treatment, and the remaining method steps are the same as those of Example 1.

[0087] In this comparative example, the roughness Ra of the surface of the tungsten silicon alloy after polishing is 0.22 μm, and the uniformity of the texture on the alloy surface is poor.

[0088] Comparative Example 5

[0089] This comparative example provides a method for polishing cemented carbide, and performs polishing treatment on tungsten silicon alloy. The difference from Example 2 is that the tungsten silicon alloy is not subjected to rough polishing treatment, and the remaining method steps are the same as those of Example 2.

[0090] In this comparative example, the roughness Ra of the surface of the tungsten silicon alloy after polishing is 0.2 μm, and the surface texture uniformity is poor.

[0091] Comparative Example 6

[0092] This comparative example provides a method for polishing cemented carbide, and performs polishing treatment on tungsten silicon alloy. The difference from Example 3 is that the tungsten silicon alloy is not subjected to rough polishing treatment, and the remaining method steps are the same as those of Example 3.

[0093] In this comparative example, the roughness Ra of the surface of the tungsten silicon alloy after polishing is 0.22 μm, and the surface texture uniformity is poor.

[0094] The present invention firstly adopts abrasive sandpaper for rough polishing, and then adopts a combination of a wool wheel and abrasive paste for fine polishing. During the fine polishing process, the coating thickness of the abrasive paste is maintained, and alcohol is added for cooling, thereby improving the uniformity of the abrasive paste, thereby obtaining a cemented carbide with uniform texture, high gloss, and a roughness Ra less than 0.2 μm.

[0095] The applicant declares that the above is only a specific implementation mode of the present invention, but the protection scope of the present invention is not limited thereto. Those skilled in the art should understand that any changes or substitutions that can be easily thought of by those skilled in the art within the technical scope disclosed by the present invention shall fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for polishing cemented carbide, characterized in that: The polishing method comprises: The cemented carbide is clamped on a machine tool, and the surface of the cemented carbide is roughly polished with abrasive paper to form annular patterns on the surface of the cemented carbide; The cemented carbide is then fine-polished using a polishing wheel coated with abrasive paste.

2. The polishing method according to claim 1, characterized in that: In the rough polishing process, the rotation speed of the machine tool is 300-600 r / min.

3. The polishing method according to claim 1 or 2, characterized in that: The mesh number of the grinding sandpaper is 200 to 600 mesh; Preferably, the grinding sandpaper includes any one of diamond sandpaper, aluminum oxide sandpaper, brown corundum sandpaper, ceramic corundum sandpaper, zirconium corundum sandpaper or silicon carbide sandpaper.

4. The polishing method according to any one of claims 1 to 3, characterized in that: After the rough polishing treatment, the roughness Ra of the cemented carbide surface is 0.2-0.3 μm.

5. The polishing method according to any one of claims 1 to 4, characterized in that: The Vickers hardness of the cemented carbide is greater than 1000 HV.

6. The polishing method according to any one of claims 1 to 5, characterized in that: The polishing method further comprises: during the fine polishing process, dripping an auxiliary agent onto the surface of the polishing wheel; Preferably, the auxiliary agent is alcohol; Preferably, the concentration of the alcohol is 90-95%; Preferably, the drop rate of the auxiliary agent is 60 to 90 drops / min.

7. The polishing method according to any one of claims 1 to 6, characterized in that: The abrasive paste comprises abrasive particles and a dispersion; Preferably, the particle size of the abrasive particles is 0.1 to 0.2 μm; Preferably, the coating thickness of the abrasive paste is 0.2 to 0.6 mm; Preferably, the abrasive grains include any one of diamond, aluminum oxide, brown corundum and zirconium corundum, or a combination of at least two thereof; Preferably, the dispersion liquid is water and / or glycerol.

8. The polishing method according to any one of claims 1 to 7, characterized in that: The rotating speed of the polishing wheel is 300-600 r / min; Preferably, the diameter of the polishing wheel is 100-150 mm; Preferably, the polishing wheel is a wool wheel.

9. The polishing method according to any one of claims 1 to 8, characterized in that: The time of the fine polishing treatment is 60 to 180 minutes; Preferably, during the fine polishing process, the grinding paste is additionally coated on the surface of the polishing wheel every 20 to 30 minutes.

10. The polishing method according to any one of claims 1 to 9, characterized in that: After the fine polishing treatment, the roughness of the cemented carbide surface Ra is less than 0.2 μm.