Silicon wafer positioning assembly and silicon wafer grinding equipment

Abstract

The invention provides a silicon wafer positioning assembly and silicon wafer grinding equipment, the silicon wafer positioning assembly comprises a material carrying ring, the material carrying ring is constructed to be in a ring shape partially arranged in the circumferential direction of a silicon wafer, and at least partial area of the material carrying ring in the circumferential direction of the inner side is constructed to be a vacant area; the positioning piece is arranged in the vacant area, the positioning piece comprises a body part and a protruding part, the side, close to the silicon wafer in the radial direction of the material carrying ring, of the body part is a first edge, the protruding part is arranged on the first edge and protrudes towards the silicon wafer in the radial direction of the material carrying ring relative to the first edge, and the protruding part is used for being embedded into a notch in the silicon wafer; the inner circumferential surface of the material carrying ring is constructed to be an arc-shaped surface matched with the outer circumferential edge of the silicon wafer, the first edge is constructed to be a straight edge, a first gap is formed between the straight edge and the silicon wafer in the radial direction of the material carrying ring, a second gap is formed between the inner circumferential surface of the material carrying ring and the silicon wafer in the radial direction of the material carrying ring, and the first gap is larger than or equal to the second gap. According to the silicon wafer positioning assembly and the silicon wafer grinding equipment, the quality of the silicon wafer can be improved.

Description

Technical Field

[0001] The present invention relates to the technical field of semiconductor manufacturing, and in particular to a silicon wafer positioning component and a silicon wafer grinding device. Background Art

[0002] During the silicon wafer processing, double-sided grinding is often used to thin the silicon wafers for defect removal. Among them, the double-disc grinder used to grind 12-inch silicon wafers is widely used because of its high efficiency and the grinding method that does not require grinding fluid.

[0003] When the double-disc grinder processes silicon wafers, the silicon wafers are placed vertically in the grinding chamber, and the loading ring drives the silicon wafers to rotate. The grinding wheels continuously feed both sides of the silicon wafers for grinding and thinning.

[0004] The silicon wafer is supported by the carrier ring and the positioning piece. The carrier ring limits the position of the silicon wafer to prevent radial displacement of the silicon wafer. The tip of the positioning piece fits with the notch of the silicon wafer to limit the circumferential position of the silicon wafer, thereby driving the silicon wafer to rotate.

[0005] During the rotation of the silicon wafer, the notch area of ​​the silicon wafer is in direct contact with the positioning piece and is subjected to force. Therefore, the positioning piece will be worn out or even scrapped as the number of processed silicon wafers increases, and it needs to be replaced frequently. In addition, the quality of the processed silicon wafer will also be affected by the positioning piece. The shape, thickness, flatness and warping of the positioning piece will affect the surface morphology of the silicon wafer. For example, it will cause abnormal wear marks on the surface of the area near the notch of the silicon wafer, causing adverse damage to the surface of the silicon wafer. Summary of the invention

[0006] In order to solve at least one technical problem in the above-mentioned prior art, an embodiment of the present disclosure provides a silicon wafer positioning assembly and a silicon wafer grinding device.

[0007] The technical solutions provided by the embodiments of the present disclosure are as follows:

[0008] In a first aspect, an embodiment of the present disclosure provides a silicon wafer positioning assembly for positioning a silicon wafer, wherein a peripheral edge of the silicon wafer has a notch; the silicon wafer positioning assembly comprises:

[0009] A carrier ring, the carrier ring being configured as a ring partially arranged around the silicon wafer in a circumferential direction, and at least a portion of the inner circumferential area of ​​the carrier ring being configured as a vacant area; and

[0010] A positioning member, the positioning member is arranged in the vacant area, the positioning member includes a main body and a protruding portion, the side of the main body close to the silicon wafer along the radial direction of the carrier ring is a first edge, the protruding portion is arranged on the first edge and protrudes toward the silicon wafer along the radial direction of the carrier ring relative to the first edge, and the protruding portion is used to be embedded in the notch on the silicon wafer; wherein,

[0011] The inner circumferential surface of the carrier ring is constructed as an arc-shaped surface adapted to the outer circumferential edge of the silicon wafer, the first edge is constructed as a straight edge, and a first gap is provided between the straight edge and the silicon wafer along the radial direction of the carrier ring, and a second gap is provided between the inner circumferential surface of the carrier ring and the silicon wafer along the radial direction of the carrier ring, and the first gap is greater than or equal to the second gap.

[0012] Exemplarily, the position of the notch of the silicon wafer corresponds to a first tangent point on the silicon wafer, wherein the first edge is parallel to a tangent line passing through the first tangent point.

[0013] Exemplarily, the notch is a V-shaped groove structure, the protrusion is a V-shaped convex structure adapted to the shape of the notch, the protrusion has a V-shaped tip area, and the shape of the V-shaped tip area is constructed as a circular arc chamfer shape.

[0014] Exemplarily, the chamfer radius of the V-shaped tip area is greater than or equal to 1 mm.

[0015] Exemplarily, a transitional connection between the protrusion and the first edge is performed with an arc chamfer structure.

[0016] Exemplarily, a chamfer radius at a transitional connection between the protrusion and the first edge is greater than or equal to 0.5 mm.

[0017] Exemplarily, the material density of the positioning member is greater than or equal to 1.35 g.cm -3 , Rockwell hardness is greater than or equal to 60HRC, and bending strength is greater than or equal to 100Mpa.

[0018] Exemplarily, the material of the positioning member includes polyimide.

[0019] Exemplarily, the thickness of the positioning member is H1, the target thickness of the silicon wafer is H2, H2 is greater than H1, and the difference between H2 and H1 is 70±2 μm.

[0020] Exemplarily, the warpage of the positioning member is less than or equal to ±30 μm, and the flatness is less than or equal to 20 μm.

[0021] In a second aspect, an embodiment of the present disclosure provides a silicon wafer grinding device, comprising the silicon wafer positioning assembly as described above.

[0022] The beneficial effects brought by the embodiments of the present disclosure are as follows:

[0023] In the above scheme, a carrier ring is provided in the silicon wafer positioning assembly, and the carrier ring can be arranged around the periphery of the silicon wafer to limit the position of the silicon wafer and prevent the silicon wafer from radially shifting. The carrier ring is annular and at least part of the inner circumference is a vacant area, and a positioning plate is provided in the vacant area. The positioning plate can fit with the notch on the silicon wafer by providing a protrusion to limit the circumferential position of the silicon wafer. There will be force in contact between the notch and the protrusion on the silicon wafer. By constructing the inner circumferential surface of the carrier ring as an arc surface adapted to the outer circumferential edge of the silicon wafer, the positioning plate can be placed on the silicon wafer. The edge of the positioning piece on one side close to the silicon wafer is constructed as a straight edge, so that the first gap between the straight edge and the edge of the silicon wafer along the radial direction of the silicon wafer can be larger than the second gap between the inner circumferential surface of the loading ring and the edge of the silicon wafer along the radial direction of the silicon wafer. Compared with the prior art in which the edge of the positioning piece on one side close to the silicon wafer is also constructed as an arc, the contact area between the silicon wafer and the positioning piece can be reduced, so that the silicon wafer and the positioning piece will only contact between the notch and the protrusion, thereby avoiding abnormal wear marks in the near-edge areas of the surfaces on both sides of the notch of the silicon wafer, avoiding adverse damage to the surface of the silicon wafer, and improving the quality of the silicon wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram showing the structure of a silicon wafer grinding device in some embodiments of the present disclosure;

[0025] Figure 2 A schematic diagram showing the structure of a silicon wafer transmission device in some embodiments of the present disclosure;

[0026] Figure 3 A schematic diagram showing the structure of a positioning member in some embodiments of the present disclosure;

[0027] Figure 4 A schematic diagram showing the division of the thickness measurement area of ​​the positioning member in some embodiments of the present disclosure. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0029] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0030] The features such as "parallel", "perpendicular", and "same" used in the embodiments of the present disclosure include the features such as "parallel", "perpendicular", and "same" in a strict sense, as well as the cases where "approximately parallel", "approximately perpendicular", "approximately the same", etc. include certain tolerances, taking into account the tolerances associated with the measurement of specific quantities (e.g., the limitations of the measurement system), and represent the acceptable deviation range for a specific value determined by ordinary technicians in the field. For example, "approximately" can mean within one or more standard deviations, or within 3% or 5% of the value.

[0031] In addition, in this document, unless otherwise defined, the terms "substantially", "substantially", "approximately" and "about" are used to describe and explain small changes. When used with an event or situation, these terms can cover situations where the event or situation occurs exactly, and can also cover situations where the event or situation occurs approximately. For example, when used with a numerical value, these terms can include a range of variation of less than or equal to 10% of the numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, less than or equal to ±0.05%. The term "substantially coplanar" can refer to two surfaces being arranged along the same plane in the micrometer range, for example, arranged along the same plane within 40μm, 30μm, 20μm, 10μm or 1μm.

[0032] The embodiment of the present disclosure provides a silicon wafer positioning assembly for positioning a silicon wafer, wherein the peripheral edge of the silicon wafer has a notch. The silicon wafer positioning assembly can be applied to a silicon wafer grinding device, but is not limited thereto.

[0033] Figure 1 Shown is a schematic structural diagram of a silicon wafer grinding device.

[0034] See also Figure 1 As shown, the silicon wafer grinding equipment may be a double disc grinder.

[0035] The silicon wafer grinding equipment may include a first static pressure plate 100, a second static pressure plate 200, a first grinding wheel 300 and a second grinding wheel 400, wherein the first grinding wheel 300 and the second grinding wheel 400 are arranged opposite to each other and spaced apart, and the silicon wafer 10 may be impacted by the airflow of the first static pressure plate 100 and the second static pressure plate 200, and stand upright between the first grinding wheel 300 and the second grinding wheel 400.

[0036] During the grinding process of the silicon wafer 10, the silicon wafer 10 may rotate, and the first grinding wheel 300 and the second grinding wheel 400 may move toward each other while rotating to simultaneously feed toward the silicon wafer 10, thereby grinding and thinning the rotating silicon wafer 10 to a specified thickness.

[0037] The rotation of the silicon wafer 10 in the grinding chamber is achieved by a silicon wafer transmission device.

[0038] like Figure 1 and Figure 2 As shown, the silicon wafer transmission device includes a transmission component 500 and a silicon wafer positioning component 600 .

[0039] like Figure 1 and Figure 2 As shown, the transmission assembly 500 may include a carrier ring 510 , a gear ring 520 and a driving gear 530 , and the silicon wafer positioning assembly 600 includes a carrier ring 610 and a positioning member 620 .

[0040] The carrier ring 510 and the carrier ring 610 are both ring-shaped. The carrier ring 610 is constructed as a ring that is partially arranged circumferentially around the silicon wafer 10, and is used to limit the position of the silicon wafer 10 to prevent the silicon wafer 10 from radially shifting.

[0041] At least a portion of the inner circumferential area of ​​the carrier ring 610 is configured as a vacant area 611. The vacant area 611 is an area corresponding to the position of the notch on the silicon wafer 10.

[0042] The positioning member 620 is disposed in the vacant area 611 .

[0043] The positioning member 620 includes a main body 621 and a protruding portion 622 . The main body 621 may be provided with a connecting hole 6211 . By inserting a fastener 630 into the connecting hole 6211 , the positioning member 620 may be fixedly connected to the carrier ring 510 .

[0044] The side of the main body 621 close to the silicon wafer 10 along the radial direction of the carrier ring 610 is a first edge 6212. The protrusion 622 is arranged on the first edge 6212 and protrudes toward the silicon wafer 10 along the radial direction of the carrier ring 610 relative to the first edge 6212. The protrusion 622 is used to be embedded in the notch 11 on the silicon wafer 10 to limit the circumferential position of the silicon wafer 10.

[0045] The carrier ring 610 is nested and connected to the inner circumference of the carrier ring 510, and the gear ring 520 is nested in the inner circumference or outer circumference of the carrier ring 510, and the gear ring 520 can be meshed with the driving gear 530. When processing the silicon wafer 10, the driving gear 530 drives the carrier ring 510 to rotate, thereby driving the carrier ring 610 and the positioning member 620 to rotate together, so that the silicon wafer 10 can rotate.

[0046] In an embodiment of the present disclosure, a silicon wafer positioning assembly 600 is provided, which includes the above-mentioned carrier ring 610 and positioning member 620, and the inner circumferential surface of the carrier ring 610 is constructed as an arc surface 612 adapted to the outer peripheral edge of the silicon wafer 10, the first edge 6212 is constructed as a straight edge, and there is a first gap between the straight edge and the silicon wafer 10 along the radial direction of the carrier ring 610, and there is a second gap between the inner circumferential surface of the carrier ring 610 and the silicon wafer 10 along the radial direction of the carrier ring 610, and the first gap is greater than or equal to the second gap.

[0047] In the related art, the edge of the positioning piece 620 close to the silicon wafer 10 is also constructed to be arc-shaped. During the processing of the silicon wafer 10, due to air flow, water flow impact and other reasons, the positioning piece 620 is easily caused to contact with the near-edge areas of the surfaces on both sides of the notch of the silicon wafer 10, causing wear marks.

[0048] In the above scheme, the inner circumferential surface of the carrier ring 610 is constructed as an arc surface 612 adapted to the outer peripheral edge of the silicon wafer 10, and the edge of the positioning member 620 close to the silicon wafer 10 is constructed as a straight edge, so that the first gap between the straight edge and the edge of the silicon wafer 10 along the radial direction of the silicon wafer 10 can be larger than the second gap between the inner circumferential surface of the carrier ring 610 and the edge of the silicon wafer 10 along the radial direction of the silicon wafer 10.

[0049] Compared with the prior art in which the edge of the positioning piece 620 close to the silicon wafer 10 is also constructed in an arc shape, the contact area between the silicon wafer 10 and the positioning piece 620 can be reduced, so that the silicon wafer 10 and the positioning piece 620 will only contact between the notch and the protrusion 622, thereby avoiding abnormal wear marks on the surface near the edge area on both sides of the notch of the silicon wafer 10, avoiding adverse damage to the surface of the silicon wafer 10, and improving the quality of the silicon wafer 10.

[0050] In some exemplary embodiments, Figure 1 and Figure 2 As shown, the position of the notch of the silicon wafer 10 corresponds to the first tangent point on the silicon wafer 10. The first edge 6212 is parallel to the tangent line a passing through the first tangent point.

[0051] By adopting the above scheme, the protrusion 622 on the first edge 6212 is embedded in the notch 11 on the silicon wafer 10, and the distance between other positions of the first edge 6212 and the outer peripheral edge of the silicon wafer 10 gradually increases, thereby effectively avoiding the first edge 6212 except the protrusion 622 from contacting the outer peripheral edge of the silicon wafer 10.

[0052] In addition, when the silicon wafer 10 and the carrying ring 610 rotate synchronously, the protrusion 622 is mainly subjected to force. In order to avoid problems such as stress concentration of the positioning piece 620 during use, breakage of the protrusion 622 due to excessive force, and damage to the notch 11 area of ​​the silicon wafer 10 caused by the protrusion 622 being too sharp, the sharp position on the protrusion 622 can be chamfered.

[0053] Specifically, in some exemplary embodiments, Figure 2 and Figure 3 As shown, the notch 11 is a V-shaped groove structure, the protrusion 622 is a V-shaped convex structure adapted to the shape of the notch 11, and the protrusion 622 has a V-shaped tip area, and the shape of the V-shaped tip area S is configured as a circular arc chamfer shape. Exemplarily, the chamfer radius R1 of the V-shaped tip area S is greater than or equal to 1 mm.

[0054] Furthermore, in some exemplary embodiments, Figure 3 As shown, the transition connection between the protrusion 622 and the first edge 6212 is performed with an arc chamfer structure.

[0055] Exemplarily, a chamfer radius R2 at a transitional connection between the protrusion 622 and the first edge 6212 is greater than or equal to 0.5 mm.

[0056] In addition, since the positioning member 620 is in direct contact with the silicon wafer 10 in the silicon wafer grinding equipment, driving the silicon wafer 10 to rotate clockwise or counterclockwise, the positioning member 620 and the silicon wafer 10 are directly subjected to force, which will affect the quality of the silicon wafer 10.

[0057] Therefore, in some embodiments of the present disclosure, the material of the positioning member 620 is optimized as follows:

[0058] First, since there is force acting between the positioning member 620 and the silicon wafer 10 , physical properties of the material of the positioning member 620 are required.

[0059] In the embodiment of the present disclosure, the material density of the positioning member 620 is not less than 1.35 g.cm -3 , Rockwell hardness (HR) is greater than or equal to 60. With the above solution, the material density and hardness conditions of the positioning member 620 can ensure that the positioning member 620 is slowly worn out during use and has a longer service life.

[0060] In addition, in the embodiment of the present disclosure, the bending strength of the material of the positioning member 620 is greater than or equal to 100 MPa, so that the positioning member 620 has a strong ability to resist deformation.

[0061] For example, in some embodiments of the present disclosure, the material of the positioning member 620 can be polyimide (PI), which can simultaneously meet the above material density, hardness and bending strength conditions, so that the positioning member 620 has a longer service life. However, the material selection for the positioning member 620 is not limited to this.

[0062] In addition, the positioning piece 620 is in direct contact with the notch 11 of the silicon wafer 10. In order to prevent the near-edge surfaces on both sides of the notch 11 of the silicon wafer 10 from causing undesirable morphology during the grinding process of the silicon wafer 10 and improve the quality of the silicon wafer 10, the thickness of the positioning piece 620, the warping and flatness of the positioning piece 620, which are directly related to the surface morphology of the silicon wafer 10, are also improved in the embodiment of the present disclosure.

[0063] Taking silicon wafer grinding equipment as an example, when the grinding wheel is fed into the silicon wafer 10, the thickness of the silicon wafer 10 gradually decreases until it reaches the target thickness. If the thickness of the positioning member 620 is greater than or equal to the silicon wafer 10, the grinding wheel will damage the positioning member 620, affecting the life of the positioning member 620.

[0064] Therefore, in some embodiments of the present disclosure, the silicon wafer positioning assembly 600 can be applied to the processing of silicon wafers 10 with various target thicknesses, and the thickness of the positioning member 620 can meet the following conditions:

[0065] The thickness of the positioning member 620 is H1, and the target thickness of the silicon wafer 10 is H2, H2 is greater than H1, and the difference between H2 and H1 is 70±2 μm.

[0066] That is, the thickness of the positioning member 620 should differ from the target thickness of the silicon wafer 10 by about 70 μm, with an error within a range of plus or minus 2 μm. For example, the thickness of the positioning member 620 may be 0.7±0.02 mm.

[0067] In some exemplary embodiments, the warpage of the positioning member 620 is less than or equal to ±30 μm, and the flatness is less than or equal to 20 μm.

[0068] The warpage is less than or equal to ±30 μm, which means that the maximum deviation of the surface of the silicon wafer 10 relative to the ideal plane does not exceed ±30 microns. The flatness is less than or equal to 20 μm, which means that the vertical distance difference between the highest point and the lowest point of the silicon wafer 10 is within 20 μm.

[0069] For example, see Figure 4 As shown, the positioning member 620 is divided into four areas, which are respectively marked as A, B, C, and D. Any position point in each of the four areas and the center position E of the silicon wafer 10 are used as test points to measure the thickness, and five thickness values ​​are obtained. The difference between the maximum thickness value and the minimum thickness value among the five thickness values ​​is less than or equal to 20μm.

[0070] In summary, the silicon wafer positioning assembly provided by the embodiment of the present disclosure can increase the service life of the positioning member and reduce the cost of silicon wafer processing; indirectly, it reduces the replacement frequency and improves the equipment utilization rate. For example, a single positioning member in the prior art can process 1500 silicon wafers, while a single positioning member in the present application can process 2500 silicon wafers.

[0071] Furthermore, the silicon wafer positioning assembly provided in the embodiment of the present disclosure solves the problem that wear marks are easily generated in the area near the notch on the surface of the silicon wafer, causing adverse damage to the surface of the silicon wafer, thereby improving the quality of silicon wafer products.

[0072] In addition, it should be noted that the silicon wafer positioning assembly 600 provided in the embodiment of the present disclosure can be applied to silicon wafer grinding equipment, but is not limited thereto, and can also be applied to other silicon wafer processing equipment besides silicon wafer grinding equipment.

[0073] The embodiment of the present disclosure provides a silicon wafer grinding device, including the silicon wafer positioning assembly 600 provided in the embodiment of the present disclosure.

[0074] Since the principle of solving the problem by the silicon wafer grinding equipment is similar to the principle of solving the problem by the above-mentioned silicon wafer positioning assembly 600, the embodiment of the silicon wafer grinding equipment provided in the embodiment of the present disclosure can refer to the embodiment of the above-mentioned silicon wafer positioning assembly 600 provided in the embodiment of the present disclosure, and will not be repeated here.

[0075] There are a few points to note:

[0076] (1) The drawings of the embodiments of the present disclosure only relate to the structures related to the embodiments of the present disclosure, and other structures may refer to the general design.

[0077] (2) For the sake of clarity, in the drawings used to describe the embodiments of the present disclosure, the thickness of layers or regions is exaggerated or reduced, that is, these drawings are not drawn according to the actual scale. It is understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "under" another element, the element may be "directly" "on" or "under" the other element or there may be intermediate elements.

[0078] (3) In the absence of conflict, the embodiments of the present disclosure and the features therein may be combined with each other to obtain new embodiments.

[0079] The above are only specific implementations of the present disclosure, but the protection scope of the present disclosure is not limited thereto, and the protection scope of the present disclosure shall be based on the protection scope of the claims.

Claims

1. A silicon wafer positioning assembly, used for positioning a silicon wafer, wherein the peripheral edge of the silicon wafer has a notch; characterized in that: The silicon wafer positioning assembly comprises: A carrier ring, the carrier ring being configured as a ring partially arranged around the silicon wafer in a circumferential direction, and at least a portion of the inner circumferential area of ​​the carrier ring being configured as a vacant area; and A positioning member, the positioning member is arranged in the vacant area, the positioning member includes a main body and a protruding portion, the side of the main body close to the silicon wafer along the radial direction of the carrier ring is a first edge, the protruding portion is arranged on the first edge and protrudes toward the silicon wafer along the radial direction of the carrier ring relative to the first edge, and the protruding portion is used to be embedded in the notch on the silicon wafer; wherein, The inner circumferential surface of the carrier ring is constructed as an arc-shaped surface adapted to the outer circumferential edge of the silicon wafer, the first edge is constructed as a straight edge, and a first gap is provided between the straight edge and the silicon wafer along the radial direction of the carrier ring, and a second gap is provided between the inner circumferential surface of the carrier ring and the silicon wafer along the radial direction of the carrier ring, and the first gap is greater than or equal to the second gap.

2. The silicon wafer positioning assembly according to claim 1, characterized in that: The position of the notch of the silicon wafer corresponds to a first tangent point on the silicon wafer, wherein the first edge is parallel to a tangent line passing through the first tangent point.

3. The silicon wafer positioning assembly according to claim 1, characterized in that: The notch is a V-shaped groove structure, the protrusion is a V-shaped convex structure adapted to the shape of the notch, the protrusion has a V-shaped tip area, and the shape of the V-shaped tip area is constructed as a circular arc chamfer shape.

4. The silicon wafer positioning assembly according to claim 3, characterized in that: The chamfer radius of the V-shaped tip area is greater than or equal to 1 mm.

5. The silicon wafer positioning assembly according to claim 1, characterized in that: The transition connection between the protrusion and the first edge is performed with an arc chamfer structure for transition.

6. The silicon wafer positioning assembly according to claim 5, characterized in that: The chamfer radius at the transition connection between the protrusion and the first edge is greater than or equal to 0.5 mm.

7. The silicon wafer positioning assembly according to claim 1, characterized in that: The material density of the positioning piece is greater than or equal to 1.35 g.cm -3 , Rockwell hardness is greater than or equal to 60HRC, and bending strength is greater than or equal to 100Mpa.

8. The silicon wafer positioning assembly according to claim 1, characterized in that: The thickness of the positioning member is H1, and the target thickness of the silicon wafer is H2, H2 is greater than H1, and the difference between H2 and H1 is 70±2 μm.

9. The silicon wafer positioning assembly according to claim 1, characterized in that: The warping degree of the positioning piece is less than or equal to ±30 μm, and the flatness is less than or equal to 20 μm.

10. A silicon wafer grinding device, characterized in that: It comprises a silicon wafer positioning assembly as claimed in any one of claims 1 to 9.

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