Capacitor array

Abstract

A capacitor array (1) includes: a capacitor section (20) including a plurality of capacitor elements (10) arranged in a plane in a plane direction orthogonal to a thickness direction, the capacitor elements (10) adjacent to each other being disconnected from each other; a sealing layer (30) that seals the capacitor part (20); and a built-in member (40) disposed inside the sealing layer (30) together with the capacitor part (20). Each of the capacitor elements (10) includes a first electrode layer (for example, an anode plate (11)), a second electrode layer (for example, a cathode layer (12)), and a dielectric layer (13). The first electrode layer and the second electrode layer face each other in the thickness direction with the dielectric layer (13) therebetween. The built-in member (40) has a melting temperature higher than the melting temperature of the sealing layer (30), and is disposed on the outer peripheral portion in the surface direction of the capacitor portion (20).

Description

Technical Field

[0001] The present invention relates to capacitor arrays. Background Art

[0002] An electrolytic capacitor, which is one type of capacitor, is produced by sealing a capacitor element including an anode body, a dielectric layer provided on the surface of the anode body, and a cathode portion provided on the surface of the dielectric layer, with a resin, for example.

[0003] Patent document 1 discloses an electrolytic capacitor, which includes: a capacitor element, which includes an anode body, a dielectric layer formed on the above-mentioned anode body, and a cathode part formed on the above-mentioned dielectric layer; an anode terminal, which is electrically connected to the above-mentioned anode body; a cathode terminal, which is electrically connected to the above-mentioned cathode part; and a resin sealing material, which covers the above-mentioned capacitor element and exposes at least parts of the above-mentioned anode terminal and the above-mentioned cathode terminal, respectively, wherein the above-mentioned anode body includes a foil containing a valve-acting metal, and includes an insulating spacer on the surface of the above-mentioned cathode part.

[0004] Patent document 2 discloses an electronic component built-in wiring substrate, which has at least two solid electrolytic capacitors built-in and has a connecting terminal portion and an inductor formed on the surface, and is characterized in that the solid electrolytic capacitor is formed by providing a collector layer on at least one side of a valve metal sheet body (anode portion), the connecting terminal portion is composed of an anode connecting terminal portion and a cathode connecting terminal portion, the anode connecting terminal portion is electrically connected to the valve metal sheet body of the solid electrolytic capacitor at at least two locations via the wiring pattern and the inductor and / or the via electrode and / or the through electrode, the cathode connecting terminal portion is electrically connected to the collector layer (cathode portion) of the solid electrolytic capacitor via the wiring pattern and / or the inductor and / or the via electrode and / or the through electrode, and the inductor is formed by a conductor pattern shape.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2017-17122

[0008] Patent Document 2: Japanese Patent Application Publication No. 2009-252764 Summary of the invention

[0009] Problem that the invention aims to solve

[0010] When a capacitor array is produced by sealing a capacitor unit composed of a plurality of capacitor elements arranged in a plane with resin, no capacitor elements exist at the periphery of the capacitor unit. Therefore, when the resin flows to the periphery of the capacitor unit, the thickness of the obtained capacitor array becomes thinner toward the periphery.

[0011] In this way, for a capacitor array with non-constant thickness, when embedding processing is performed as a post-process, if the thickness of the embedded product is to be constant, the embedding resin layer covering the outer periphery of the capacitor array becomes thicker, while the embedding resin layer covering the central part of the capacitor array becomes thinner. Therefore, when forming a via conductor for connecting to the electrode portion of the capacitor element in the embedding resin layer, there is a possibility that the via conductor hole cannot be formed to the electrode portion of the capacitor element in the thicker portion of the embedding resin layer, or the via conductor hole is formed to reach the electrode portion of the capacitor element in the thinner portion of the embedding resin layer. Therefore, it is required to make the thickness of the entire capacitor array uniform.

[0012] An object of the present invention is to provide a capacitor array capable of making the overall thickness nearly uniform.

[0013] Solutions for solving problems

[0014] The capacitor array of the present invention includes: a capacitor unit, which includes a plurality of capacitor elements arranged in a plane in a surface direction orthogonal to the thickness direction, and the adjacent capacitor elements are disconnected from each other; a sealing layer, which seals the capacitor unit; and an internal component, which is arranged inside the sealing layer together with the capacitor unit. The capacitor elements each include a first electrode layer, a second electrode layer, and a dielectric layer, and the first electrode layer and the second electrode layer are opposite to each other in the thickness direction via the dielectric layer. The internal component has a melting temperature higher than that of the sealing layer, and is arranged at the outer periphery of the capacitor unit in the surface direction.

[0015] Effects of the Invention

[0016] According to the present invention, it is possible to provide a capacitor array in which the overall thickness can be made nearly uniform. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a cross-sectional view schematically showing an example of a capacitor array according to the first embodiment of the present invention.

[0018] Figure 2 yes Figure 1 A top view of the capacitor array at the P1 surface is shown.

[0019] Figure 3 This is a cross-sectional view schematically showing an example of a state where embedding processing is performed on a capacitor array of an embodiment having an embedded component.

[0020] Figure 4 It is a cross-sectional view schematically showing an example of a state where embedding processing is performed on a capacitor array of a comparative example having no built-in member.

[0021] Figure 5 It is a plan view schematically showing an example of a process of preparing a capacitor array sheet.

[0022] Figure 6 It is a cross-sectional view schematically showing an example of a process of preparing a capacitor array sheet.

[0023] Figure 7 It is a plan view schematically showing an example of a process of cutting a capacitor array sheet.

[0024] Figure 8 It is a cross-sectional view schematically showing an example of a process of cutting a capacitor array sheet.

[0025] Fig. 9 It is a plan view schematically showing an example of a process of arranging built-in components.

[0026] Fig.10 It is a cross-sectional view schematically showing an example of a process of arranging a built-in member.

[0027] Fig.11 It is a plan view schematically showing an example of a process of thermocompression bonding an insulating resin sheet.

[0028] Fig.12 This is a cross-sectional view schematically showing an example of a process of thermocompression bonding an insulating resin sheet.

[0029] Fig.13 It is a top view schematically showing an example of a process of individualizing a capacitor array.

[0030] Fig.14 It is a cross-sectional view schematically showing an example of a process of individualizing a capacitor array.

[0031] Fig.15 It is a cross-sectional view schematically showing a modification of the arrangement of the external electrode layer.

[0032] Fig.16 It is a plan view schematically showing an example of arrangement of built-in components.

[0033] Fig.17 It is a plan view schematically showing a first modified example of the arrangement of built-in components.

[0034] Fig.18 It is a plan view schematically showing a second modified example of the arrangement of the built-in components.

[0035] Fig.19 It is a plan view schematically showing a third modified example of the arrangement of the built-in components.

[0036] Fig. 20It is a plan view schematically showing a fourth modified example of the arrangement of built-in components.

[0037] Fig.21 It is a cross-sectional view schematically showing an example of a capacitor array according to a second embodiment of the present invention.

[0038] Fig. 22 It is a plan view schematically showing an example of a process of preparing a capacitor array sheet.

[0039] Fig.23 It is a cross-sectional view schematically showing an example of a process of preparing a capacitor array sheet.

[0040] Fig.24 It is a plan view schematically showing an example of a process of cutting a capacitor array sheet.

[0041] Fig.25 It is a cross-sectional view schematically showing an example of a process of cutting a capacitor array sheet.

[0042] Fig.26 It is a plan view schematically showing an example of a process of thermocompression bonding an insulating resin sheet.

[0043] Fig. 27 This is a cross-sectional view schematically showing an example of a process of thermocompression bonding an insulating resin sheet.

[0044] Fig.28 It is a top view schematically showing an example of a process of individualizing a capacitor array.

[0045] Fig.29 It is a cross-sectional view schematically showing an example of a process of individualizing a capacitor array.

[0046] Fig.30 It is a plan view schematically showing another example of the process of individualizing the capacitor array.

[0047] Fig.31 It is a cross-sectional view schematically showing another example of the capacitor array according to the second embodiment of the present invention. DETAILED DESCRIPTION

[0048] The capacitor array of the present invention is described below. In addition, the present invention is not limited to the following structure, and can be appropriately changed within the scope of the present invention. In addition, a structure obtained by combining multiple preferred structures described below is also the present invention.

[0049] In this specification, terms indicating the relationship between elements (such as "vertical", "parallel", "orthogonal", etc.) and terms indicating the shape of an element do not express only strict meanings, but rather express substantially equivalent ranges, for example, also including differences of several percentage points.

[0050] The embodiments shown below are examples, and it is self-evident that parts of the structures shown in different embodiments can be replaced or combined. After the second embodiment, the description of the matters common to the first embodiment is omitted, and only the different points are described. In particular, the same effects achieved by the same structure are not mentioned repeatedly in each embodiment.

[0051] In the following description, when there is no particular distinction between the embodiments, they are simply referred to as "capacitor arrays of the present invention."

[0052] The drawings shown below are schematic diagrams, and their dimensions, aspect ratios, and the like may differ from those of actual products.

[0053] [First embodiment]

[0054] In the capacitor array according to the first embodiment of the present invention, the built-in member includes a structure different from the capacitor element.

[0055] Figure 1 It is a cross-sectional view schematically showing an example of a capacitor array according to the first embodiment of the present invention. Figure 2 yes Figure 1 A top view of the capacitor array at the P1 surface is shown.

[0056] Figure 1 and Figure 2 The capacitor array 1 shown includes a capacitor unit 20 including a plurality of capacitor elements 10 , a sealing layer 30 sealing the capacitor unit 20 , and an internal member 40 disposed inside the sealing layer 30 together with the capacitor unit 20 .

[0057] The capacitor array 1 may further include an external electrode layer 50 provided on the surface of the sealing layer 30. In this case, the external electrode layer 50 includes a first external electrode layer 51 and a second external electrode layer 52, for example.

[0058] The number of capacitor elements 10 included in capacitor section 20 is not particularly limited as long as it is two or more.

[0059] In the capacitor section 20, the plurality of capacitor elements 10 are arranged in a direction parallel to the thickness direction (in Figure 1 The plane is arranged in a direction perpendicular to the up and down directions.

[0060] In the capacitor unit 20, the plurality of capacitor elements 10 may be arranged in a straight line, that is, along one direction (eg Figure 2 Alternatively, it may be arranged in a planar shape along multiple directions (e.g. Figure 2 In addition, the plurality of capacitor elements 10 may be arranged regularly or irregularly.

[0061] In the capacitor unit 20, adjacent capacitor elements 10 are disconnected from each other. Adjacent capacitor elements 10 may be physically disconnected from each other. Therefore, adjacent capacitor elements 10 may be electrically disconnected or electrically connected to each other. For example, when the capacitor unit 20 includes three or more capacitor elements 10, groups of electrically disconnected capacitor elements 10 and groups of electrically connected capacitor elements 10 may also be mixed.

[0062] Preferably, portions where adjacent capacitor elements 10 are disconnected from each other are filled with an insulating material such as sealing layer 30 .

[0063] The interval between adjacent capacitor elements 10 is not particularly limited, but is preferably 15 μm or more, more preferably 30 μm or more, and further preferably 50 μm or more. On the other hand, the interval between adjacent capacitor elements 10 is preferably 500 μm or less, more preferably 200 μm or less, and further preferably 150 μm or less.

[0064] The interval between adjacent capacitor elements 10 may be constant in the thickness direction or may be reduced in the thickness direction. For example, if the interval between adjacent capacitor elements 10 is reduced in the thickness direction and the portion where adjacent capacitor elements 10 are disconnected is tapered, it is easy to fill the insulating material such as the sealing layer 30.

[0065] Each of the capacitor elements 10 includes a first electrode layer, a second electrode layer, and a dielectric layer, and the first electrode layer and the second electrode layer are opposed to each other in the thickness direction with the dielectric layer interposed therebetween.

[0066] exist Figure 1 In the example shown, the first electrode layer is an anode plate 11, and the second electrode layer is a cathode layer 12. Thus, the capacitor element 10 constitutes an electrolytic capacitor.

[0067] Anode plate 11 includes core 11A made of metal, for example, and porous portion 11B provided on at least one main surface of core 11A. Dielectric layer 13 is provided on the surface of porous portion 11B, and cathode layer 12 is provided on the surface of dielectric layer 13.

[0068] Cathode layer 12 includes, for example, solid electrolyte layer 12A provided on the surface of dielectric layer 13. Preferably, cathode layer 12 further includes conductor layer 12B provided on the surface of solid electrolyte layer 12A. When cathode layer 12 includes solid electrolyte layer 12A, capacitor element 10 constitutes a solid electrolytic capacitor.

[0069] Preferably, the sealing layer 30 is provided on two main surfaces of the capacitor unit 20 that are opposed to each other in the thickness direction. The plurality of capacitor elements 10 are protected by the sealing layer 30 .

[0070] The sealing layer 30 may be composed of only one layer or may be composed of two or more layers. When the sealing layer 30 is composed of two or more layers, the materials constituting the respective layers may be the same or different.

[0071] The sealing layer 30 is formed so as to seal the capacitor unit 20 by, for example, a method of thermocompression bonding an insulating resin sheet or a method of applying an insulating resin paste and then thermally curing the paste.

[0072] like Figure 1 and Figure 2 As shown in FIG. 1 , the built-in member 40 is arranged on the outer periphery of the surface direction of the capacitor unit 20. Preferably, as Figure 1 As shown, the built-in member 40 is sealed together with the capacitor portion 20 by the sealing layer 30 from two surfaces facing each other in the thickness direction.

[0073] exist Figure 1 and Figure 2 In the illustrated example, built-in member 40 includes a structure different from capacitor element 10 and is electrically insulated from capacitor portion 20 .

[0074] Built-in member 40 may be in contact with capacitor unit 20 or may be separated from capacitor unit 20. When built-in member 40 is separated from capacitor unit 20, it is preferable that an insulating material such as sealing layer 30 is filled between built-in member 40 and capacitor unit 20.

[0075] The built-in member 40 may or may not be exposed from the sealing layer 30 in the plane direction. On the other hand, it is preferable that the built-in member 40 is not exposed from the sealing layer 30 in the thickness direction.

[0076] Figure 3 This is a cross-sectional view schematically showing an example of a state where embedding processing is performed on a capacitor array of an embodiment having an embedded component. Figure 4 It is a cross-sectional view schematically showing an example of a state where embedding processing is performed on a capacitor array of a comparative example having no built-in member.

[0077] like Figure 3As in the capacitor array 1 of the embodiment shown, the built-in member 40 is arranged on the outer periphery of the capacitor unit 20 in the plane direction, and the built-in member 40 and the capacitor unit 20 are sealed together by the sealing layer 30, so that the thickness of the entire capacitor array 1 can be made nearly uniform.

[0078] On the other hand, Figure 4 When the capacitor unit 20 is sealed only by the sealing layer 30 as in the capacitor array 1a of the comparative example shown, the capacitor element 10 does not exist at the periphery of the capacitor unit 20, so the thickness of the entire capacitor array 1a tends to decrease toward the periphery.

[0079] Therefore, in Figure 4 In the capacitor array 1a shown, when the embedding resin layer 60 is formed so as to cover the sealing layer 30 and the external electrode layer 50, if the thickness of the embedded product is to be constant, the embedding resin layer 60 is thicker at the periphery, while the embedding resin layer 60 is thinner at the center. As a result, when a via conductor for connecting to the external electrode layer 50 is formed in the embedding resin layer 60, processing defects may occur, such as the via conductor hole cannot be formed to the external electrode layer 50 in the thicker portion of the embedding resin layer 60, or the via conductor hole is formed to reach the external electrode layer 50 in the thinner portion of the embedding resin layer 60.

[0080] In contrast, Figure 3 In the capacitor array 1 shown, when the embedded resin layer 60 is formed so as to cover the sealing layer 30 and the external electrode layer 50, the thickness of the embedded resin layer 60 can be made nearly uniform. As a result, when the via conductor for connecting to the external electrode layer 50 is formed in the embedded resin layer 60, processing becomes easy. In addition, deformation at the peripheral portion can also be reduced.

[0081] From the viewpoint of preventing deformation caused by heat, the built-in member 40 has a melting temperature higher than the melting temperature of the sealing layer 30 .

[0082] The melting temperatures of the sealing layer 30 and the built-in component 40 can be confirmed by heating a small test piece obtained by cutting out a portion of each and measuring the temperature at which the small test piece melts. Alternatively, a differential scanning calorimeter (DSC) can be used to measure the melting point peak as the melting temperature.

[0083] The built-in member 40 is made of, for example, an insulating material. In this case, it is preferable that the built-in member 40 is made of an insulating resin. Furthermore, the built-in member 40 may contain a filler such as an inorganic filler.

[0084] The height (dimension in the thickness direction) of the built-in component 40 is not particularly limited, but in the case of manufacturing the capacitor array 1 by the method described later, it is preferred that the height of the built-in component 40 is equal to the thickness of the anode plate 11. The "equal" mentioned here may not be strictly the same, but may be limited to a substantially equivalent range, such as a range within a few percentage points. In addition, the height of the built-in component 40 may be different from the thickness of the anode plate 11. In the case where the height of the built-in component 40 is thinner than the thickness of the anode plate 11 or thicker than the thickness of the anode plate 11, a capacitor array with an overall thickness that is close to uniform can be provided compared to the case where the built-in component 40 is not present.

[0085] The width (dimension in the plane direction) of the built-in component 40 is not particularly limited, but is preferably 15 μm or more, more preferably 30 μm or more, and further preferably 50 μm or more. On the other hand, the width of the built-in component 40 is preferably 500 μm or less, more preferably 200 μm or less, and further preferably 150 μm or less. The width of the built-in component 40 may be the same as the spacing between adjacent capacitor elements 10, may be smaller than the spacing between adjacent capacitor elements 10, or may be larger than the spacing between adjacent capacitor elements 10.

[0086] The width of the built-in member 40 may be constant in the thickness direction, or may decrease in the thickness direction.

[0087] From the viewpoint of making the thickness of the capacitor array 1 as a whole close to uniform, it is preferred that the ratio occupied by the built-in member 40 is large, but on the other hand, if the ratio occupied by the built-in member 40 is too large, the ratio occupied by the capacitor element 10 becomes small. Based on the above, it is preferred that the ratio of the area of ​​the built-in member 40 to the area of ​​the whole capacitor array 1 when viewed from the thickness direction is 0.1% or more and 10% or less.

[0088] Hereinafter, the detailed structure of the capacitor array 1 will be described.

[0089] As the plane shape of the capacitor element 10 when viewed from the thickness direction, for example, a rectangle (square or rectangular), a quadrilateral other than a rectangle, a triangle, a pentagon, a hexagon or other polygon, a circle, an ellipse, a shape formed by combining these shapes, etc. In addition, the plane shape of the capacitor element 10 may also be an L-shape, a C-shape (Japanese U-shape), a step shape, etc.

[0090] The planar shapes of capacitor elements 10 when viewed in the thickness direction may be the same as or different from each other, or may be partially different from each other.

[0091] The areas of capacitor elements 10 when viewed in the thickness direction may be the same as or different from each other, or may be partially different from each other.

[0092] When the capacitor element 10 includes the anode plate 11 and the cathode layer 12, the anode plate 11 is preferably made of a valve metal that exhibits a so-called valve action. As the valve metal, for example, metal monomers such as aluminum, tantalum, niobium, titanium, and zirconium or alloys containing at least one of these metals can be cited. Among them, aluminum or an aluminum alloy is preferred.

[0093] The shape of the anode plate 11 is preferably a flat plate, and more preferably a foil. Thus, in this specification, "plate-like" also includes "foil-like".

[0094] The anode plate 11 may have the porous portion 11B on at least one main surface of the core 11A. That is, the anode plate 11 may have the porous portion 11B on only one main surface of the core 11A, or may have the porous portion 11B on both main surfaces of the core 11A. The porous portion 11B is preferably a porous layer formed on the surface of the core 11A, and more preferably an etching layer.

[0095] The thickness of the anode plate 11 before etching is preferably 60 μm or more and 200 μm or less. The thickness of the core 11A that is not etched after etching is preferably 15 μm or more and 70 μm or less. The thickness of the porous portion 11B is designed to match the required withstand voltage and electrostatic capacity, but preferably, the porous portions 11B on both sides of the core 11A are 10 μm or more and 180 μm or less in total.

[0096] The pore size of the porous portion 11B is preferably 10 nm or more and 600 nm or less. The pore size of the porous portion 11B refers to a median diameter D50 measured by a mercury porosimeter. The pore size of the porous portion 11B can be controlled by adjusting various conditions during etching, for example.

[0097] The dielectric layer 13 provided on the surface of the porous portion 11B is porous reflecting the surface state of the porous portion 11B and has a fine concavoconvex surface shape. Preferably, the dielectric layer 13 is composed of an oxide film of the above-mentioned valve-acting metal. For example, when an aluminum foil is used as the anode plate 11, the dielectric layer 13 composed of an oxide film can be formed by performing an anodic oxidation treatment (also called chemical conversion treatment) on the surface of the aluminum foil in an aqueous solution containing ammonium adipate or the like.

[0098] The thickness of the dielectric layer 13 is designed in accordance with the required withstand voltage and electrostatic capacitance, but is preferably not less than 10 nm and not more than 100 nm.

[0099] In the case where the cathode layer 12 includes a solid electrolyte layer 12A, as a material constituting the solid electrolyte layer 12A, for example, conductive polymers such as polypyrroles, polythiophenes, and polyanilines can be cited. Among them, polythiophenes are preferred, and poly (3,4-ethylenedioxythiophene) called PEDOT is particularly preferred. In addition, the conductive polymer may include a dopant such as polystyrene sulfonic acid (PSS). In addition, it is preferred that the solid electrolyte layer 12A includes an inner layer that fills the pores (recesses) of the dielectric layer 13 and an outer layer that covers the dielectric layer 13.

[0100] The thickness of solid electrolyte layer 12A from the surface of porous portion 11B is preferably 2 μm or more and 20 μm or less.

[0101] The solid electrolyte layer 12A is formed, for example, by a method of forming a polymer film of poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 using a treatment solution containing a monomer such as 3,4-ethylenedioxythiophene, or by a method of applying a dispersion of a polymer such as poly(3,4-ethylenedioxythiophene) or the like on the surface of the dielectric layer 13 and drying it.

[0102] The solid electrolyte layer 12A can be formed in a predetermined region by applying the above-mentioned treatment liquid or dispersion liquid to the surface of the dielectric layer 13 by a method such as sponge transfer, screen printing, dispenser coating, or inkjet printing.

[0103] When cathode layer 12 includes conductor layer 12B, conductor layer 12B includes at least one of a conductive resin layer and a metal layer. Conductor layer 12B may be only a conductive resin layer or only a metal layer. Preferably, conductor layer 12B covers the entire surface of solid electrolyte layer 12A.

[0104] Examples of the conductive resin layer include a conductive adhesive layer containing at least one conductive filler selected from the group consisting of a silver filler, a copper filler, a nickel filler, and a carbon filler.

[0105] As the metal layer, for example, metal plating, metal foil, etc. can be cited. Preferably, the metal layer is composed of at least one metal selected from the group consisting of nickel, copper, silver, and alloys containing these metals as main components. In addition, the "main component" refers to the element component with the largest weight ratio.

[0106] The conductor layer 12B includes, for example, a carbon layer provided on the surface of the solid electrolyte layer 12A and a copper layer provided on the surface of the carbon layer.

[0107] The carbon layer is provided to electrically and mechanically connect the solid electrolyte layer 12A to the copper layer. The carbon layer can be formed in a predetermined area by applying carbon paste to the surface of the solid electrolyte layer 12A by sponge transfer, screen printing, dispenser coating, inkjet printing, etc. In addition, it is preferred that the carbon layer is laminated with the copper layer of the next process in a sticky state before drying. The thickness of the carbon layer is preferably 2 μm or more and 20 μm or less.

[0108] The copper layer can be formed in a predetermined region by applying a copper paste to the surface of the carbon layer by sponge transfer, screen printing, spray coating, dispenser coating, inkjet printing, etc. The thickness of the copper layer is preferably 2 μm or more and 20 μm or less.

[0109] The sealing layer 30 is made of an insulating material. In this case, it is preferable that the sealing layer 30 is made of an insulating resin.

[0110] Examples of the insulating resin constituting the sealing layer 30 include epoxy resin and phenol resin.

[0111] Preferably, the sealing layer 30 further contains a filler.

[0112] Examples of the filler contained in the sealing layer 30 include inorganic fillers such as silica particles and alumina particles.

[0113] A layer such as a stress relaxation layer or a moisture-proof film may be provided between the capacitor unit 20 and the sealing layer 30 .

[0114] Preferably, if Figure 1 As shown, the capacitor array 1 further includes a through-hole conductor 70 .

[0115] Preferably, the through-hole conductor 70 includes at least one of a first through-hole conductor 71 electrically connected to the first electrode layer (eg, anode plate 11 ) of the capacitor element 10 and a second through-hole conductor 72 electrically connected to the second electrode layer (eg, cathode layer 12 ) of the capacitor element 10 .

[0116] The first through-hole conductor 71 penetrates the capacitor portion 20 and the sealing layer 30 in the thickness direction.

[0117] First through-hole conductor 71 may be provided at least on the inner wall surface of first through-hole 81 penetrating capacitor unit 20 and sealing layer 30 in the thickness direction. First through-hole conductor 71 may be provided only on the inner wall surface of first through-hole 81 or throughout the entire interior of first through-hole 81.

[0118] Preferably, the first through-hole conductor 71 is electrically connected to the anode plate 11 at the inner wall surface of the first through-hole 81. More specifically, preferably, the first through-hole conductor 71 is electrically connected to the end surface of the anode plate 11 that is opposite to the inner wall surface of the first through-hole 81 in the plane direction. Thus, the anode plate 11 is electrically conducted to the outside via the first through-hole conductor 71.

[0119] Preferably, core 11A and porous portion 11B are exposed on the end surface of anode plate 11 and electrically connected to first through-hole conductor 71. In this case, core 11A is electrically connected to first through-hole conductor 71, and porous portion 11B is also electrically connected to first through-hole conductor 71.

[0120] Preferably, when viewed in the thickness direction, the first through-hole conductor 71 is electrically connected to the anode plate 11 over the entire circumference of the first through-hole 81. In this case, the connection resistance between the anode plate 11 and the first through-hole conductor 71 is easily reduced, so the equivalent series resistance (ESR) of the capacitor element 10 is easily reduced.

[0121] The first through-hole conductor 71 is formed, for example, as follows. First, a first through-hole 81 is formed that penetrates the capacitor portion 20 and the sealing layer 30 in the thickness direction by drilling, laser processing, etc. Then, the first through-hole conductor 71 is formed by metallizing the inner wall surface of the first through-hole 81 with a metal material containing a low-resistance metal such as copper, gold, or silver. When forming the first through-hole conductor 71, for example, by metallizing the inner wall surface of the first through-hole 81 with an electroless copper plating process, an electrolytic copper plating process, etc., the processing becomes easy. In addition, regarding the method of forming the first through-hole conductor 71, in addition to the method of metallizing the inner wall surface of the first through-hole 81, a method of filling the first through-hole 81 with a metal material, a composite material of metal and resin, etc. may also be used.

[0122] An anode connection layer may be provided between the anode plate 11 and the first through-hole conductor 71 in the plane direction. That is, the anode plate 11 and the first through-hole conductor 71 may be electrically connected via the anode connection layer.

[0123] The anode connection layer is provided between the anode plate 11 and the first through-hole conductor 71 in the surface direction, so that the anode connection layer functions as a barrier layer for the anode plate 11, more specifically, as a barrier layer for the core portion 11A and the porous portion 11B. When the anode connection layer functions as a barrier layer for the anode plate 11, the melting of the anode plate 11 generated during the treatment of the chemical solution for forming the external electrode layer 50 (for example, the first external electrode layer 51) is suppressed, and further, the penetration of the chemical solution into the capacitor portion 20 is suppressed, so that the reliability of the capacitor array 1 is easily improved.

[0124] Preferably, the anode connection layer includes a layer containing nickel as a main component. In this case, damage to the metal (for example, aluminum) constituting the anode plate 11 is reduced, so the barrier property of the anode connection layer to the anode plate 11 is easily improved.

[0125] Furthermore, the anode connection layer may not be provided between the anode plate 11 and the first through-hole conductor 71 in the plane direction. In this case, the first through-hole conductor 71 may be directly connected to the end surface of the anode plate 11 .

[0126] When the first through-hole conductor 71 is provided only on the inner wall surface of the first through-hole 81, a resin-filled portion filled with a resin material may be provided in the first through-hole 81. In this case, the resin-filled portion is provided in the space surrounded by the first through-hole conductor 71 in the first through-hole 81. If the space in the first through-hole 81 is eliminated by providing the resin-filled portion, the occurrence of delamination of the first through-hole conductor 71 can be suppressed.

[0127] The first external electrode layer 51 is electrically connected to the first electrode layer (for example, the anode plate 11) of the capacitor element 10. Figure 1 In the example shown, the first external electrode layer 51 is provided on the surface of the first through-hole conductor 71 and functions as a connection terminal of the capacitor array 1 (capacitor element 10). Figure 1 In the illustrated example, the first external electrode layer 51 is electrically connected to the anode plate 11 via the first through-hole conductor 71 , and functions as a connection terminal for the anode plate 11 .

[0128] Examples of the constituent material of the first external electrode layer 51 include metal materials containing low-resistance metals such as silver, gold, and copper. In this case, the first external electrode layer 51 can be formed by plating the surface of the first through-hole conductor 71, for example.

[0129] In order to improve the tightness between the first external electrode layer 51 and other components, here, in order to improve the tightness between the first external electrode layer 51 and the first through-hole conductor 71, as the constituent material of the first external electrode layer 51, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can also be used.

[0130] The second through-hole conductor 72 penetrates the capacitor portion 20 and the sealing layer 30 in the thickness direction.

[0131] Second through-hole conductor 72 may be provided at least on the inner wall surface of second through-hole 82 penetrating capacitor unit 20 and sealing layer 30 in the thickness direction. Second through-hole conductor 72 may be provided only on the inner wall surface of second through-hole 82 or throughout the entire interior of second through-hole 82.

[0132] The second through-hole conductor 72 is formed, for example, as follows. First, a through-hole is formed that penetrates the capacitor portion 20 in the thickness direction by drilling, laser processing, etc. Next, an insulating material is filled in the through-hole. The second through-hole 82 is formed by drilling, laser processing, etc. for the portion filled with the insulating material. At this time, by making the diameter of the second through-hole 82 smaller than the diameter of the through-hole filled with the insulating material, the insulating material is present between the inner wall surface of the through-hole previously formed and the inner wall surface of the second through-hole 82 in the surface direction. Thereafter, the inner wall surface of the second through-hole 82 is metallized using a metal material containing a low-resistance metal such as copper, gold, or silver, thereby forming the second through-hole conductor 72. When forming the second through-hole conductor 72, for example, by metallizing the inner wall surface of the second through-hole 82 using an electroless copper plating process, an electrolytic copper plating process, etc., the processing becomes easy. In addition, the second through-hole conductor 72 may be formed by filling the second through-hole 82 with a metal material, a composite material of metal and resin, or the like, other than metalizing the inner wall surface of the second through-hole 82 .

[0133] When the second through-hole conductor 72 is provided only on the inner wall surface of the second through-hole 82, a resin-filled portion filled with a resin material may be provided in the second through-hole 82. In this case, the resin-filled portion is provided in the space surrounded by the second through-hole conductor 72 in the second through-hole 82. If the space in the second through-hole 82 is eliminated by providing the resin-filled portion, the delamination of the second through-hole conductor 72 can be suppressed.

[0134] The second external electrode layer 52 is electrically connected to the second electrode layer (eg, cathode layer 12) of the capacitor element 10. Figure 1 In the illustrated example, the second external electrode layer 52 is provided on the surface of the second through-hole conductor 72 , and functions as a connection terminal of the capacitor array 1 (capacitor element 10 ).

[0135] As a constituent material of the second external electrode layer 52, for example, a metal material containing a low-resistance metal such as silver, gold, copper, etc. In this case, the second external electrode layer 52 can be formed by plating the surface of the second through-hole conductor 72, for example.

[0136] In order to improve the tightness between the second external electrode layer 52 and other components, here, in order to improve the tightness between the second external electrode layer 52 and the second through-hole conductor 72, as the constituent material of the second external electrode layer 52, a mixed material of at least one conductive filler selected from the group consisting of silver filler, copper filler, nickel filler and carbon filler and resin can also be used.

[0137] The first external electrode layer 51 and the second external electrode layer 52 are preferably composed of the same material at least in terms of type, but may be composed of different materials.

[0138] exist Figure 1 In the example shown, a first external electrode layer 51 electrically connected to the anode plate 11 and a second external electrode layer 52 electrically connected to the cathode layer 12 are provided in each of the plurality of capacitor elements 10, but the plurality of capacitor elements 10 may also be provided in such a manner that at least one of the first external electrode layer 51 and the second external electrode layer 52 is shared by the plurality of capacitor elements 10.

[0139] exist Figure 1 In the illustrated example, the first external electrode layer 51 and the second external electrode layer 52 are provided on both main surfaces of the sealing layer 30 , but may be provided on only one main surface of the sealing layer 30 .

[0140] exist Figure 1 Although not shown in the figure, the through-hole conductor 70 may include a third through-hole conductor that is not electrically connected to the first electrode layer (eg, anode plate 11 ) and the second electrode layer (eg, cathode layer 12 ) of the capacitor element 10 .

[0141] Preferably, if Figure 1 As shown, the capacitor array 1 further includes a via conductor 90 .

[0142] The via conductor 90 penetrates the sealing layer 30 in the thickness direction and is connected to the cathode layer 12 and the second external electrode layer 52 .

[0143] Examples of the constituent material of via conductor 90 include metal materials containing a low-resistance metal such as silver, gold, or copper.

[0144] Via conductor 90 is formed, for example, by plating the inner wall surface of a through hole that penetrates sealing layer 30 in the thickness direction with the above-mentioned metal material or by performing heat treatment after filling with a conductive paste.

[0145] exist Figure 1 In the illustrated example, the second through-hole conductor 72 is electrically connected to the cathode layer 12 through the second external electrode layer 52 and the via conductor 90 .

[0146] exist Figure 1 In the illustrated example, the second external electrode layer 52 is electrically connected to the cathode layer 12 via the through conductor 90 , and functions as a connection terminal for the cathode layer 12 .

[0147] When the capacitor array 1 includes the through-hole conductors 70 , the capacitor element 10 preferably further includes an insulating layer 35 provided around the through-hole conductors 70 on at least one main surface of the anode plate 11 .

[0148] exist Figure 1 and Figure 2 In the example shown in FIG. 1 , an insulating layer 35 is provided between the first through-hole conductor 71 and the cathode layer 12. Figure 1 and Figure 2 In the illustrated example, an insulating material such as a sealing layer 30 is filled between the second through-hole conductor 72 and the capacitor element 10 , and an insulating layer 35 is provided between the insulating material and the cathode layer 12 .

[0149] exist Figure 1 and Figure 2 Although not shown in the figure, the capacitor element 10 may further include an insulating layer provided on at least one main surface of the anode plate 11 so as to surround the cathode layer 12. By surrounding the cathode layer 12 with the insulating layer, insulation between the anode plate 11 and the cathode layer 12 is ensured, thereby preventing a short circuit between the two.

[0150] The insulating layer may be provided so as to partially surround the cathode layer 12 , but it is preferable that the insulating layer be provided so as to entirely surround the cathode layer 12 .

[0151] The insulating layer such as the insulating layer 35 is made of an insulating material. In this case, it is preferable that the insulating layer is made of an insulating resin.

[0152] Examples of insulating resins constituting insulating layers such as the insulating layer 35 include polyphenylsulfone resins, polyethersulfone resins, cyanate resins, fluororesins (tetrafluoroethylene, tetrafluoroethylene-perfluoroalkyl vinyl ether copolymers, etc.), polyimide resins, polyamide-imide resins, epoxy resins, and derivatives or precursors thereof.

[0153] Insulating layer 35 or the like may be formed of the same resin as sealing layer 30. Unlike sealing layer 30, when an insulating layer contains an inorganic filler, this may adversely affect the effective capacitance portion of capacitor element 10, so it is preferred that the insulating layer be formed of a single type of resin.

[0154] The insulating layer 35 or the like can be formed in a predetermined region by applying a masking material such as a composition containing an insulating resin to the surface of the porous portion 11B by a method such as sponge transfer, screen printing, dispenser coating, or inkjet printing.

[0155] The insulating layer such as the insulating layer 35 may be formed in the porous portion 11B before or after the dielectric layer 13 is formed.

[0156] Figure 1 and Figure 2 The capacitor array 1 shown can be manufactured by the following method, for example.

[0157] Figure 5 It is a plan view schematically showing an example of a process of preparing a capacitor array sheet. Figure 6 It is a cross-sectional view schematically showing an example of a process of preparing a capacitor array sheet.

[0158] exist Figure 5 and Figure 6 In the process shown, a capacitor array sheet 100 in which a cathode layer 12 is provided in a predetermined region of an anode plate 11 is prepared.

[0159] First, an anode plate 11 made of a valve metal is prepared. Figure 6 As shown, a dielectric layer 13 is provided on at least one main surface of the anode plate 11 .

[0160] For example, by subjecting anode plate 11 having porous portion 11B provided on at least one principal surface of core portion 11A to anodization, dielectric layer 13 is formed on the surface of porous portion 11B.

[0161] Alternatively, a chemically formed foil may be prepared as the anode plate 11 in which the dielectric layer 13 is provided on the surface of the porous portion 11B.

[0162] exist Figure 5 and Figure 6 Although not shown in the figure, in order to divide each capacitor element 10 (refer to Figure 1 and Figure 2 ) in a predetermined area, for example, by applying an insulating resin to the surface of the dielectric layer 13 using a method such as screen printing or dispenser coating, thereby forming an insulating layer in a predetermined area.

[0163] If necessary, the through-hole conductor 70 (see Figure 1 and Figure 2 ) region to form an insulating layer 35 (see Figure 1 and Figure 2 ).

[0164] Next, for example, solid electrolyte layer 12A is formed on the surface of dielectric layer 13 , and then conductor layer 12B is formed on the surface of solid electrolyte layer 12A. In this way, cathode layer 12 is formed.

[0165] Figure 7 It is a plan view schematically showing an example of a process of cutting a capacitor array sheet. Figure 8 It is a cross-sectional view schematically showing an example of a process of cutting a capacitor array sheet.

[0166] exist Figure 7 and Figure 8In the process shown in the figure, the capacitor array sheet 100 is cut to form the through groove 110, thereby breaking into individual capacitor elements 10. In addition, the part that becomes the product is removed (see Fig.13 and Fig.14 ) to form a slit 120 on the outer periphery.

[0167] As a method for forming the through groove 110 and the slit 120, for example, laser processing, cutting processing, etc. can be cited. The method for forming the through groove 110 may be the same as or different from the method for forming the slit 120. In addition, the order of forming the through groove 110 and the slit 120 is not particularly limited.

[0168] Fig. 9 It is a plan view schematically showing an example of a process of arranging built-in components. Fig.10 It is a cross-sectional view schematically showing an example of a process of arranging a built-in member.

[0169] exist Fig. 9 and Fig.10 In the illustrated process, the built-in member 40 is disposed inside the slit 120. For example, an insulating material having a melting temperature higher than that of the insulating material constituting the sealing layer 30 is flowed into the slit 120.

[0170] Fig.11 It is a plan view schematically showing an example of a process of thermocompression bonding an insulating resin sheet. Fig.12 This is a cross-sectional view schematically showing an example of a process of thermocompression bonding an insulating resin sheet.

[0171] exist Fig.11 and Fig.12 In the process shown, for example, the insulating resin sheet 130 is thermally compressed from both main surface sides of the capacitor array sheet 100. At this time, the inside of the through groove 110 is filled with the insulating resin.

[0172] Fig.13 It is a top view schematically showing an example of a process of individualizing a capacitor array. Fig.14 It is a cross-sectional view schematically showing an example of a process of individualizing a capacitor array.

[0173] exist Fig.13 and Fig.14 In the process shown, by following Fig.11 and Fig.12 The cut line CL shown cuts the capacitor array sheet 100 and the insulating resin sheet 130 to separate the capacitor array 1. At this time, in the surface direction, the built-in component 40 can be cut in a manner that is exposed from the sealing layer 30, or it can be cut in a manner that is not exposed. In addition, when the built-in component 40 is exposed from the sealing layer 30, it is also possible to cut on the built-in component 40.

[0174] Thereafter, the external electrode layer 50, the through-hole conductor 70, and the via conductor 90 are formed as necessary to manufacture the Figure 1 and Figure 2 The capacitor array 1 is shown.

[0175] Fig.15 It is a cross-sectional view schematically showing a modification of the arrangement of the external electrode layer.

[0176] It can also be, Fig.15 As in the capacitor array 1A shown in FIG. 1 , the external electrode layer 50 is provided directly above the internal member 40 in the thickness direction.

[0177] Fig.16 It is a plan view schematically showing an example of arrangement of built-in components.

[0178] exist Fig.16 In the example shown, the built-in components 40A are continuously arranged over the entire outermost periphery of the product portion.

[0179] Fig.17 It is a plan view schematically showing a first modified example of the arrangement of built-in components.

[0180] exist Fig.17 In the example shown, the built-in component 40B is not arranged in the outermost part of the product portion. Fig.17 In the embodiment, the built-in member 40B is not arranged at the four corners, but the built-in member 40B may be not arranged at at least one corner.

[0181] Fig.18 It is a plan view schematically showing a second modified example of the arrangement of the built-in components.

[0182] exist Fig.18 In the example shown, the internal components 40C are arranged at intervals on the outermost periphery of the product portion. The intervals between the internal components 40C may be the same, different, or partially different. Fig.18 In the embodiment, the built-in member 40C is not arranged at the four corners, but the built-in member 40C may not be arranged at at least one corner.

[0183] Fig.19 It is a plan view schematically showing a third modified example of the arrangement of the built-in components.

[0184] exist Fig.19 In the example shown, the internal component 40D is arranged along the outermost periphery of the product portion at a position inside the outermost periphery of the product portion. In this case, the internal component 40D may be arranged continuously, partially not arranged, or arranged at intervals.

[0185] Fig. 20 It is a plan view schematically showing a fourth modified example of the arrangement of built-in components.

[0186] exist Fig. 20 In the example shown, the built-in component 40E is arranged along the outer shape of the product part. In this case, the built-in component 40E can be arranged continuously, can be not arranged locally, or can be arranged at intervals. In addition, the built-in component 40E can also be arranged along the outer shape of the product part at a position closer to the inner side than the outermost periphery of the product part.

[0187] [Second embodiment]

[0188] In the capacitor array according to the second embodiment of the present invention, the built-in member includes the same structure as the capacitor element.

[0189] Fig.21 It is a cross-sectional view schematically showing an example of a capacitor array according to a second embodiment of the present invention.

[0190] exist Fig.21 In the capacitor array 2 shown, the internal member 41 includes the same structure as the capacitor element 10 , and is electrically insulated from the capacitor section 20 at a position separated from the capacitor section 20 . Fig.21 The capacitor array 2 shown has the same structure as that shown in FIG. 1 except that it includes an internal component 41 instead of the internal component 40. Figure 1 The capacitor array 1 shown has a common structure.

[0191] In capacitor array 2 , built-in member 41 includes the same structure as capacitor element 10 , and therefore, there is no need to prepare a separate material as with built-in member 40 including a structure different from capacitor element 10 . Therefore, capacitor array 2 can be easily manufactured.

[0192] exist Fig.21 In the example shown, the built-in member 41 includes the same structure as the anode plate 11 and is electrically insulated from the capacitor section 20 at a position separated from the capacitor section 20. Therefore, the built-in member 41 has a melting temperature higher than that of the sealing layer 30.

[0193] Preferably, the built-in member 41 includes a core portion 11A made of metal and a porous portion 11B provided on at least one main surface of the core portion 11A, similarly to the anode plate 11. The dielectric layer 13 may be provided on the surface of the porous portion 11B.

[0194] like Fig.21 As shown in FIG. 1 , the built-in member 41 is arranged on the outer periphery of the surface direction of the capacitor unit 20. Preferably, as Fig.21As shown, the built-in member 41 is sealed by the sealing layer 30 from both sides facing each other in the thickness direction together with the capacitor unit 20 .

[0195] The built-in member 41 is separated from the capacitor unit 20. Preferably, an insulating material such as a sealing layer 30 is filled between the built-in member 41 and the capacitor unit 20.

[0196] The width between the built-in component 41 and the capacitor part 20 is not particularly limited, but is preferably 15 μm or more, more preferably 30 μm or more, and further preferably 50 μm or more. On the other hand, the width between the built-in component 41 and the capacitor part 20 is preferably 500 μm or less, more preferably 200 μm or less, and further preferably 150 μm or less. The width between the built-in component 41 and the capacitor part 20 can be the same as the interval between adjacent capacitor elements 10, can be smaller than the interval between adjacent capacitor elements 10, and can be larger than the interval between adjacent capacitor elements 10.

[0197] The built-in member 41 may or may not be exposed from the sealing layer 30 in the plane direction. On the other hand, it is preferable that the built-in member 41 is not exposed from the sealing layer 30 in the thickness direction.

[0198] The height (dimension in the thickness direction) of the built-in component 41 is not particularly limited, but when the anode plate 11 and the built-in component 41 are manufactured from the capacitor array sheet 100 by the method described later, it is preferred that the height of the built-in component 41 is equal to the thickness of the anode plate 11. The "equal" mentioned here may not be strictly the same, but may be limited to a substantially equivalent range, such as a range within a few percentage points.

[0199] The width (dimension in the plane direction) of the built-in component 41 is not particularly limited, but is preferably 15 μm or more, more preferably 30 μm or more, and further preferably 50 μm or more. On the other hand, the width of the built-in component 41 is preferably 500 μm or less, more preferably 200 μm or less, and further preferably 150 μm or less. The width of the built-in component 41 may be the same as the spacing between adjacent capacitor elements 10, smaller than the spacing between adjacent capacitor elements 10, or larger than the spacing between adjacent capacitor elements 10. In addition, the width of the built-in component 41 may be the same as the width between the built-in component 41 and the capacitor portion 20, smaller than the width between the built-in component 41 and the capacitor portion 20, or larger than the width between the built-in component 41 and the capacitor portion 20.

[0200] From the viewpoint of making the thickness of the capacitor array 2 as a whole close to uniform, it is preferred that the ratio occupied by the built-in member 41 is large, but on the other hand, if the ratio occupied by the built-in member 41 is too large, the ratio occupied by the capacitor element 10 becomes small. Based on the above, it is preferred that the ratio of the area of ​​the built-in member 41 to the area of ​​the entire capacitor array 2 when viewed from the thickness direction is 0.1% or more and 10% or less.

[0201] Fig.21 The capacitor array 2 shown can be manufactured by the following method, for example.

[0202] Fig. 22 It is a plan view schematically showing an example of a process of preparing a capacitor array sheet. Fig.23 It is a cross-sectional view schematically showing an example of a process of preparing a capacitor array sheet.

[0203] exist Fig. 22 and Fig.23 In the process shown, Figure 5 and Figure 6 In the same manner as shown in the steps shown, a capacitor array sheet 100 is prepared in which a cathode layer 12 is provided in a predetermined region of an anode plate 11 .

[0204] Fig.24 It is a plan view schematically showing an example of a process of cutting a capacitor array sheet. Fig.25 It is a cross-sectional view schematically showing an example of a process of cutting a capacitor array sheet.

[0205] exist Fig.24 and Fig.25 In the process shown in the figure, the capacitor array sheet 100 is cut to form the through groove 110, thereby breaking into individual capacitor elements 10. In addition, the portion that becomes the product is removed (see Fig.28 and Fig.29 ) forms a slit 120 at the inner portion of the outer periphery.

[0206] As a method for forming the through groove 110 and the slit 120, for example, laser processing, cutting processing, etc. can be cited. The method for forming the through groove 110 may be the same as or different from the method for forming the slit 120. In addition, the order of forming the through groove 110 and the slit 120 is not particularly limited.

[0207] Fig.26 It is a plan view schematically showing an example of a process of thermocompression bonding an insulating resin sheet. Fig. 27 This is a cross-sectional view schematically showing an example of a process of thermocompression bonding an insulating resin sheet.

[0208] exist Fig.26 and Fig. 27In the process shown, for example, the insulating resin sheet 130 is thermally compressed from both main surface sides of the capacitor array sheet 100. At this time, the inside of the through groove 110 and the slit 120 is filled with the insulating resin.

[0209] Fig.28 It is a top view schematically showing an example of a process of individualizing a capacitor array. Fig.29 It is a cross-sectional view schematically showing an example of a process of individualizing a capacitor array.

[0210] exist Fig.28 and Fig.29 In the process shown, by following Fig.26 and Fig. 27 The cut line CL shown cuts the capacitor array sheet 100 and the insulating resin sheet 130 to separate the capacitor array 2. Thus, a part of the anode plate 11 remains as the built-in component 41 on the outer periphery of the product part. Preferably, the built-in component 41 is exposed from the sealing layer 30 in the surface direction.

[0211] Fig.30 It is a plan view schematically showing another example of the process of individualizing the capacitor array.

[0212] It can also be that from Fig.30 After the insulating resin sheets 130 (not shown) are thermally pressed against the two main surfaces of the capacitor array sheet 100 in the state shown, Fig.30 The cut line CL shown cuts the capacitor array sheet 100 and the insulating resin sheet 130. In this case, the built-in component 41 is shared between adjacent capacitor arrays 2 (see Fig.28 ), so that a plurality of capacitor arrays 2 can be manufactured by one cutting.

[0213] Thereafter, the external electrode layer 50, the through-hole conductor 70, and the via conductor 90 are formed as necessary to manufacture the Fig.21 The capacitor array 2 is shown.

[0214] exist Fig.21 The capacitor array 2 shown may also be, as Fig.15 As in the capacitor array 1A shown in FIG. 1 , the external electrode layer 50 is provided just above the internal member 41 in the thickness direction.

[0215] exist Fig.21 In the example shown, a first external electrode layer 51 electrically connected to the anode plate 11 and a second external electrode layer 52 electrically connected to the cathode layer 12 are provided in each of the plurality of capacitor elements 10, but it may also be provided in a manner such that at least one of the first external electrode layer 51 and the second external electrode layer 52 is shared by the plurality of capacitor elements 10.

[0216] Fig.31 It is a cross-sectional view schematically showing another example of the capacitor array according to the second embodiment of the present invention.

[0217] exist Fig.31 In the capacitor array 2A shown in FIG. 1 , the width between the built-in component 41 and the capacitor portion 20 decreases in the thickness direction. Fig.21 The capacitor array 2 shown is common.

[0218] The width between the built-in component 41 and the capacitor portion 20 can be Fig.21 It is constant in the thickness direction as shown, or it can be Fig.31 As shown in the figure, it becomes smaller in the thickness direction. Fig.31 As shown, if the width between the built-in member 41 and the capacitor unit 20 decreases in the thickness direction and the portion between the built-in member 41 and the capacitor unit 20 is tapered, it is easy to fill the insulating material such as the sealing layer 30 .

[0219] [Other embodiments]

[0220] The capacitor array of the present invention is not limited to the above-mentioned embodiment as long as the built-in component having a melting temperature higher than that of the sealing layer is arranged on the outer periphery of the surface direction of the capacitor part. Therefore, various applications and modifications can be applied to the structure and manufacturing conditions of the capacitor array within the scope of the present invention.

[0221] In the capacitor array of the present invention, the capacitor element is not limited to the electrolytic capacitor of the solid electrolytic capacitor. In the capacitor array of the present invention, the capacitor element may also be, for example, a ceramic capacitor using barium titanate, a thin film capacitor using silicon nitride (SiN), silicon dioxide (SiO2), hydrogen fluoride (HF), etc., a trench capacitor having a MIM (Metal Insulator Metal) structure, etc.

[0222] In the capacitor array of the present invention, from the viewpoint of thinning and increasing the area of ​​the capacitor part and improving the mechanical properties such as rigidity and flexibility of the capacitor part, the capacitor element is preferably a capacitor with a metal such as aluminum as a substrate, and more preferably an electrolytic capacitor with a metal such as aluminum as a substrate.

[0223] The capacitor array of the present invention is used, for example, in a composite electronic component. Such a composite electronic component includes, for example, the capacitor array of the present invention and an electronic component electrically connected to an external electrode layer of the capacitor array of the present invention.

[0224] In the composite electronic component, the electronic component electrically connected to the external electrode layer may be a passive element, an active element, both a passive element and an active element, or a composite of a passive element and an active element.

[0225] As a passive element, an inductor etc. can be mentioned, for example.

[0226] Examples of active components include a memory, a GPU (Graphical Processing Unit), a CPU (Central Processing Unit), an MPU (Micro Processing Unit), and a PMIC (Power Management IC).

[0227] In the case where the capacitor array of the present invention is used for a composite electronic component, the capacitor array of the present invention is, for example, treated as a substrate for mounting the electronic component. Therefore, by making the capacitor array of the present invention as a whole sheet-shaped, and making the electronic component mounted on the capacitor array of the present invention sheet-shaped, the capacitor array of the present invention and the electronic component can be electrically connected in the thickness direction via a through-hole conductor that penetrates the electronic component in the thickness direction. As a result, the passive component and the active component as the electronic component can be configured as a unified module.

[0228] For example, a switching regulator can be formed by electrically connecting the capacitor array of the present invention between a voltage regulator including a semiconductor active element and a load to which a converted DC voltage is supplied.

[0229] In a composite electronic component, a circuit layer may be formed on one main surface of a capacitor array sheet in which a plurality of capacitor arrays of the present invention are arranged, and the circuit layer may be electrically connected to a passive element or an active element as the electronic component.

[0230] Alternatively, the capacitor array of the present invention may be arranged in a cavity pre-formed in the substrate, embedded in resin, and then a circuit layer may be formed on the resin. Alternatively, passive or active elements as other electronic components may be mounted in other cavities of the substrate.

[0231] Alternatively, the capacitor array of the present invention may be mounted on a smooth carrier such as a wafer or glass, and after forming the outer layer using resin, a circuit layer is formed, and on this basis, the circuit layer is electrically connected to a passive element or an active element as an electronic component.

[0232] In this specification, the following contents are disclosed.

[0233] <1>

[0234] A capacitor array, wherein:

[0235] The capacitor array includes:

[0236] A capacitor portion including a plurality of capacitor elements arranged in a plane in a plane direction perpendicular to the thickness direction, wherein adjacent capacitor elements are disconnected from each other;

[0237] a sealing layer that seals the capacitor portion; and

[0238] an internal component, which is arranged inside the sealing layer together with the capacitor unit,

[0239] Each of the capacitor elements includes a first electrode layer, a second electrode layer, and a dielectric layer, wherein the first electrode layer and the second electrode layer are opposed to each other in the thickness direction with the dielectric layer interposed therebetween.

[0240] The built-in member has a melting temperature higher than that of the sealing layer, and is disposed on an outer peripheral portion of the capacitor portion in the plane direction.

[0241] <2>

[0242] The capacitor array according to <1>, wherein:

[0243] The built-in member includes the same structure as the capacitor element, and is electrically insulated from the capacitor portion at a position separated from the capacitor portion.

[0244] <3>

[0245] The capacitor array according to <1> or <2>, wherein:

[0246] The width between the built-in member and the capacitor portion decreases in the thickness direction.

[0247] <4>

[0248] The capacitor array according to any one of <1> to <3>, wherein:

[0249] The built-in member is exposed from the sealing layer in the surface direction.

[0250] <5>

[0251] The capacitor array according to any one of <1> to <4>, wherein:

[0252] The first electrode layer is an anode plate having a core portion and a porous portion, wherein the core portion is made of metal and the porous portion is provided on at least one main surface of the core portion.

[0253] The dielectric layer is provided on the surface of the porous portion.

[0254] The second electrode layer is a cathode layer provided on the surface of the dielectric layer.

[0255] <6>

[0256] The capacitor array according to <5>, wherein:

[0257] The cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer.

[0258] <7>

[0259] The capacitor array according to <5> or <6>, wherein:

[0260] The height of the built-in component is equal to the thickness of the anode plate.

[0261] <8>

[0262] The capacitor array according to any one of <5> to <7>, wherein:

[0263] The built-in member includes the same structure as the anode plate, and is electrically insulated from the capacitor portion at a position separated from the capacitor portion.

[0264] <9>

[0265] The capacitor array according to any one of <5> to <8>, wherein:

[0266] The width between the built-in member and the capacitor portion decreases in the thickness direction.

[0267] <10>

[0268] The capacitor array according to any one of <5> to <9>, wherein:

[0269] The built-in member is exposed from the sealing layer in the surface direction.

[0270] Description of Reference Numerals

[0271] 1, 1a, 1A, 2, 2A, capacitor array; 10, capacitor element; 11, anode plate (first electrode layer); 11A, core; 11B, porous portion; 12, cathode layer (second electrode layer); 12A, solid electrolyte layer; 12B, conductor layer; 13, dielectric layer; 20, capacitor portion; 30, sealing layer; 35, insulating layer; 40, 40A, 40B, 40C, 40D, 40E, 41. built-in component; 50. external electrode layer; 51. first external electrode layer; 52. second external electrode layer; 60. embedded resin layer; 70. through-hole conductor; 71. first through-hole conductor; 72. second through-hole conductor; 81. first through-hole; 82. second through-hole; 90. via conductor; 100. capacitor array sheet; 110. through-groove; 120. slit; 130. insulating resin sheet; CL, cutting line.

Claims

1. A capacitor array, wherein: The capacitor array includes: A capacitor portion including a plurality of capacitor elements arranged in a plane in a plane direction orthogonal to the thickness direction, wherein adjacent capacitor elements are disconnected from each other; a sealing layer that seals the capacitor portion; and an internal member disposed inside the sealing layer together with the capacitor unit, Each of the capacitor elements includes a first electrode layer, a second electrode layer, and a dielectric layer, wherein the first electrode layer and the second electrode layer are opposed to each other in the thickness direction with the dielectric layer interposed therebetween. The built-in member has a melting temperature higher than that of the sealing layer, and is disposed on an outer peripheral portion of the capacitor portion in the plane direction.

2. The capacitor array according to claim 1, wherein: The built-in member includes the same structure as the capacitor element, and is electrically insulated from the capacitor portion at a position separated from the capacitor portion.

3. The capacitor array according to claim 1 or 2, wherein: A width between the built-in member and the capacitor portion decreases in the thickness direction.

4. The capacitor array according to any one of claims 1 to 3, wherein: The built-in component is exposed from the sealing layer in the surface direction.

5. The capacitor array according to any one of claims 1 to 4, wherein: The first electrode layer is an anode plate having a core portion and a porous portion, the core portion being made of metal, and the porous portion being provided on at least one main surface of the core portion. The dielectric layer is provided on the surface of the porous portion. The second electrode layer is a cathode layer provided on the surface of the dielectric layer.

6. The capacitor array according to claim 5, wherein: The cathode layer includes a solid electrolyte layer provided on a surface of the dielectric layer.

7. The capacitor array according to claim 5 or 6, wherein: The height of the built-in component is equal to the thickness of the anode plate.

8. The capacitor array according to any one of claims 5 to 7, wherein: The built-in member includes the same structure as the anode plate, and is electrically insulated from the capacitor portion at a position separated from the capacitor portion.

9. The capacitor array according to any one of claims 5 to 8, wherein: A width between the built-in member and the capacitor portion decreases in the thickness direction.

10. The capacitor array according to any one of claims 5 to 9, wherein: The built-in component is exposed from the sealing layer in the surface direction.

Images