Display device

Abstract

Provided is a display device having excellent heat dissipation properties. The black matrix substrate (3) includes a transparent substrate (31) having a first main surface and a second main surface, and a black matrix (32) provided on the first main surface and having a plurality of first through-holes; a resin layer (34) provided on the black matrix (32) and having second through-holes at the positions of the first through-holes; and a reflective layer (35) that at least partially covers the side wall of each of the second through-holes and the upper surface of the resin layer (34), and the portion of the reflective layer (35) that covers the upper surface of the resin layer (34) has an arithmetic mean height (Sa) in the range of 40-650 nm and a sharpness (Sku) of 3 or more.

Description

Technical Field

[0001] The invention relates to a display device. Background Art

[0002] In a display device, partition walls that separate pixels or sub-pixels from each other are sometimes provided (see Patent Documents 1 and 2). The partition walls can achieve, for example, efficient use of light or prevention of color mixing.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2018-189920

[0006] Patent Document 2: Japanese Patent Application Publication No. 2015-064391 Summary of the invention

[0007] An object of the present invention is to provide a display device having excellent heat dissipation performance.

[0008] According to one aspect of the present invention, a black matrix substrate is provided, comprising: a transparent substrate having a first main surface and a second main surface; a black matrix disposed on the first main surface and having a plurality of first through holes; a resin layer disposed on the black matrix and having a plurality of second through holes at the positions of the plurality of first through holes; and a reflective layer, at least partially covering the side walls of the plurality of second through holes and the upper surface of the resin layer, wherein the portion of the reflective layer covering the upper surface is, with an arithmetic mean height S a In the range of 40 to 650nm, the kurtosis is S ku 3 or more.

[0009] Here, the "arithmetic mean height S a ” is a surface property parameter defined in JIS B0681-2:2018. In addition, “sharpness S ku ” is a surface property parameter defined in JIS B0681-2:2018. In addition, JIS B0681-2:2018 corresponds to ISO25178-2.

[0010] According to another aspect of the present invention, there is provided a black matrix substrate according to the above aspect, wherein the portion of the reflective layer covering the side wall has an arithmetic mean height S a In the range of 40 to 650nm, the sharpness S ku 3 or more.

[0011] According to yet another aspect of the present invention, there is provided a black matrix substrate according to any one of the above aspects, wherein the reflective layer also partially covers the black matrix.

[0012] According to still another aspect of the present invention, there is provided a black matrix substrate according to any one of the above aspects, further comprising a plurality of wavelength conversion layers respectively disposed in at least a portion of the plurality of second through holes.

[0013] According to still another aspect of the present invention, there is provided a black matrix substrate according to any one of the above aspects, further comprising a color filter including a plurality of coloring layers respectively arranged at positions of at least a portion of the plurality of first through holes.

[0014] According to still another aspect of the present invention, there is provided a black matrix substrate according to any one of the above aspects, wherein the reflective layer includes a layer made of metal or alloy.

[0015] According to yet another aspect of the present invention, a display device is provided, comprising: a black matrix substrate according to any one of the above aspects; a dimming device arranged facing the first main surface; and an adhesive layer sandwiched between the black matrix substrate and the dimming device to bond them together.

[0016] According to yet another aspect of the present invention, a display device according to the above aspect is provided, further comprising: a heat sink located outside the stacked body consisting of the black matrix substrate, the dimming device and the adhesive layer; and a heat conductor that conducts heat from the reflective layer to the heat sink.

[0017] According to still another aspect of the present invention, there is provided a display device according to the above aspect, wherein the heat sink includes a back heat sink disposed opposite to the black matrix substrate with the dimming device and the adhesive layer sandwiched therebetween.

[0018] According to yet another aspect of the present invention, there is provided a display device according to the above aspect, wherein the back heat sink is a back heat dissipation layer provided on the dimming device.

[0019] According to yet another aspect of the present invention, there is provided a display device according to any one of the above aspects, wherein one or more through holes are provided on the dimming device, and the heat conductor is at least partially located in the one or more through holes.

[0020] According to yet another aspect of the present invention, there is provided a display device according to any one of the above aspects, wherein the dimming device comprises a plurality of light emitting elements.

[0021] According to yet another aspect of the present invention, there is provided a display device according to any one of the above aspects, wherein the dimming device comprises a plurality of light emitting diodes.

[0022] According to the present invention, a display device having excellent heat dissipation properties is provided. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a plan view showing a part of the display device according to the first embodiment of the present invention.

[0024] Figure 2 yes Figure 1 The equivalent circuit diagram of the display device shown.

[0025] Figure 3 yes Figure 1 The display device is shown in a cross-sectional view along line III-III.

[0026] Figure 4 yes Figure 1 The display device shown is a cross-sectional view taken along line IV-IV.

[0027] Figure 5 It is a cross-sectional view showing a part of a display device according to a second embodiment of the present invention. DETAILED DESCRIPTION

[0028] Below, while referring to the attached Figure 1 The embodiments of the present invention will be described below. The embodiments described below are further specific forms of any of the above aspects. The matters described below can be incorporated into each of the above aspects individually or in combination of multiples.

[0029] In addition, the embodiments shown below illustrate the configuration for embodying the technical concept of the present invention, and the technical concept of the present invention is not limited by the material, shape, and structure of the following components. Various changes can be made to the technical concept of the present invention within the technical scope specified by the claims described in the claims.

[0030] In addition, for elements having the same or similar functions, the same reference symbols are marked in the drawings referred to below, and repeated descriptions are omitted. In addition, the drawings are schematic drawings, and the relationship between the dimensions in a certain direction and the dimensions in other directions, and the relationship between the dimensions of a certain component and the dimensions of other components, etc. may be different from the actual situation.

[0031] <1> First Embodiment

[0032] Figure 1 It is a plan view showing a part of the display device according to the first embodiment of the present invention. Figure 2 yes Figure 1 The equivalent circuit diagram of the display device shown. Figure 3 yes Figure 1 The display device is shown in a cross-sectional view along line III-III. Figure 4 yes Figure 1 The cross-sectional view of the display device shown in FIG. Figure 1 In FIG. 1 , as will be described later, a region surrounded by a dotted line indicates an opening of a first through hole included in the black matrix 32 on the transparent substrate 31 side.

[0033] Figures 1 to 4 The display device 1A shown is capable of color display by active matrix driving, and each sub-pixel is a micro LED display including a light emitting diode (LED).

[0034] In each figure, the X direction and the Y direction are directions parallel to the display surface of the display device 1A and intersecting each other. According to one example, the X direction and the Y direction are perpendicular to each other. In addition, the Z direction is a direction perpendicular to the X direction and the Y direction. That is, the Z direction is the thickness direction of the display device 1A.

[0035] like Figure 2 As shown, the display device 1A includes a video signal line VSL, a power line PSL, a scanning signal line SSL, a pixel PX, a video signal line driver VDR, and a scanning signal line driver SDR.

[0036] The video signal lines VSL and the power supply lines PSL extend in the Y direction and are alternately arranged in the X direction. The scanning signal lines SSL extend in the X direction and are alternately arranged in the Y direction.

[0037] The pixels PX are arranged in the X direction and the Y direction. Each pixel PX includes a first sub-pixel PXR, a second sub-pixel PXG, and a third sub-pixel PXB. The first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB are arranged corresponding to the intersection of the video signal line VSL and the scanning signal line SSL.

[0038] The first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB emit light of different colors. Here, as an example, the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB emit red light, green light, and blue light, respectively.

[0039] In each pixel PX, the first subpixel PXR, the second subpixel PXG, and the third subpixel PXB are sequentially arranged in the X direction. The arrangement order of the first subpixel PXR, the second subpixel PXG, and the third subpixel PXB in each pixel PX can be changed.

[0040] In addition, here, the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB are arranged in a stripe shape, but the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB may also be arranged in other arrangements such as a delta arrangement and a mosaic arrangement.

[0041] The first subpixel PXR, the second subpixel PXG, and the third subpixel PXB include a light emitting element D, a driving control element DR, a switch SW, and a capacitor C, respectively.

[0042] The light-emitting element D is a light-emitting diode. The light-emitting diode is, for example, a light-emitting diode made of an inorganic substance. The light-emitting diode made of an inorganic substance is obtained, for example, by monolithicizing a laminate having the same layer structure as them into a plurality of parts. The light-emitting element D may also be a light-emitting diode made of an organic substance, i.e., an electroluminescent element. The cathode of the light-emitting element D is connected to the ground electrode. Here, as an example, it is assumed that the light-emitting element D is a blue light-emitting diode made of an inorganic substance and emitting blue light.

[0043] The drive control element DR and the switch SW are field effect transistors. Here, the drive control element DR is a p-channel thin film transistor, and the switch SW is an n-channel thin film transistor. The gate of the drive control element DR is connected to the drain of the switch SW, the source is connected to the power supply line PSL, and the drain is connected to the anode of the light emitting element D. The gate of the switch SW is connected to the scanning signal line SSL, and the source is connected to the video signal line VSL.

[0044] The capacitor C is, for example, a thin film capacitor, and one electrode of the capacitor C is connected to the gate of the drive control element DR, and the other electrode of the capacitor C is connected to the power supply line PSL.

[0045] The first sub-pixel PXR also includes Figure 3 as well as Figure 4 The first wavelength conversion layer 36R and the first coloring layer 33R are shown.

[0046] The first wavelength conversion layer 36R is disposed facing the light emitting element D of the first sub-pixel PXR. The first wavelength conversion layer 36R converts the light emitted by the light emitting element D of the first sub-pixel PXR into first light of a specific color. For example, the first wavelength conversion layer 36R converts the blue light emitted by the light emitting element D of the first sub-pixel PXR into red light.

[0047] The first colored layer 33R is disposed facing the light emitting element D of the first sub-pixel PXR with the first wavelength conversion layer 36R interposed therebetween. The first colored layer 33R transmits the light after the wavelength conversion by the first wavelength conversion layer 36R, and absorbs the light not converted by the wavelength by the first wavelength conversion layer 36R. The first colored layer 33R is, for example, a red colored layer that transmits the red light after the wavelength conversion by the first wavelength conversion layer 36R, and absorbs the blue light not converted by the first wavelength conversion layer 36R.

[0048] The second sub-pixel PXG also includes Figure 3 The second wavelength conversion layer 36G and the second coloring layer 33G are shown.

[0049] The second wavelength conversion layer 36G is disposed opposite to the light emitting element D of the second sub-pixel PXG. The second wavelength conversion layer 36G converts the light emitted by the light emitting element D of the second sub-pixel PXG into a second light of a color different from the first light. For example, the second wavelength conversion layer 36G converts the blue light emitted by the light emitting element D of the second sub-pixel PXG into green light.

[0050] The second colored layer 33G is disposed facing the light emitting element D of the second sub-pixel PXG with the second wavelength conversion layer 36G interposed therebetween. The second colored layer 33G transmits the light after the wavelength conversion by the second wavelength conversion layer 36G, and absorbs the light not converted by the wavelength by the second wavelength conversion layer 36G. The second colored layer 33G is, for example, a green colored layer that transmits the green light after the wavelength conversion by the second wavelength conversion layer 36G, and absorbs the blue light not converted by the wavelength by the second wavelength conversion layer 36G.

[0051] The third sub-pixel PXB also includes Figure 3 Shown are a base layer 33B and a filler layer 36B.

[0052] The filling layer 36B is provided to face the light emitting element D of the third sub-pixel PXB. The filling layer 36B is, for example, a colorless and transparent layer. The filling layer 36B can be omitted.

[0053] The base layer 33B is disposed facing the light emitting element D of the third sub-pixel PXB with the filling layer 36B interposed therebetween. The base layer 33B transmits the light emitted by the light emitting element D of the third sub-pixel PXB as the third light. The base layer 33B is, for example, a colorless light-transmitting layer or a blue colored layer that transmits the blue light emitted by the light emitting element D of the third sub-pixel PXB.

[0054] like Figure 2As shown, the video signal line driver VDR and the scanning signal line driver SDR are mounted on the display panel by a COG (chip on glass) method. The video signal line driver VDR and the scanning signal line driver SDR may be mounted by a TCP (tape carrier package) method instead of the COG method.

[0055] The video signal line driver VDR is connected to the video signal line VSL and the power supply line PSL. The video signal line driver VDR outputs a voltage signal as a video signal to the video signal line VSL.

[0056] The scanning signal line driver SDR is connected to the scanning signal line SSL. The scanning signal line driver SDR outputs a voltage signal to the scanning signal line SSL as a scanning signal. The power line PSL may be connected to the scanning signal line driver SDR instead of being connected to the video signal line driver VDR.

[0057] The display device 1A will be described in more detail.

[0058] like Figure 3 as well as Figure 4 As shown, the display device 1A includes a dimming device 2A, a black matrix substrate 3 , and an adhesive layer 4 .

[0059] The light control device is a device that emits light toward the black matrix substrate and can adjust at least one of the intensity of the light and the time of emitting the light for each pixel or each sub-pixel. Figure 3 as well as Figure 4 The dimming device 2A shown includes a substrate 21 , a semiconductor layer 22 , conductor layers 23A, 23B, 23C, and 23D, insulating layers 24A, 24B, and 24C, a light emitting element 25 , a partition layer 26 , a filling layer 27 , and a conductor layer 28 .

[0060] The substrate 21 includes, for example, an insulating substrate such as a glass substrate. The substrate 21 may also include a primer layer provided on the main surface of the insulating substrate facing the black matrix substrate 3. The primer layer is, for example, a laminate of a silicon nitride layer and a silicon oxide layer sequentially stacked on the insulating substrate. The substrate 21 may also be a semiconductor substrate such as a silicon substrate. The substrate 21 may also be hard or flexible.

[0061] The semiconductor layer 22 is arranged on the main surface of the substrate 21 facing the black matrix substrate 3. The semiconductor layer 22 is, for example, a polysilicon layer. The semiconductor layer 22 is a semiconductor layer of a thin film transistor constituting the drive control element DR or the switch SW. Each semiconductor layer 22 includes a source electrode, a drain electrode, and a channel region sandwiched therebetween.

[0062] The conductor layer 23A is a conductor pattern provided on the main surface of the substrate 21. The conductor layer 23A constitutes the video signal line VSL, the power line PSL, the source electrode SE, the drain electrode DE, and the lower electrode (not shown) of the capacitor C. The source electrode SE and the drain electrode DE are connected to the source and the drain of the semiconductor layer 22, respectively. The conductor layer 23A is made of metal or alloy. The conductor layer 23A may have a single-layer structure or a multi-layer structure.

[0063] The insulating layer 24A covers the conductive layer 23A and the main surface of the substrate 21. The insulating layer 24A can be formed using TEOS (tetraethyl orthosilicate), for example. The gate insulating film of each thin film transistor constituting the drive control element DR or the switch SW is a part of the insulating layer 24A. In addition, the dielectric layer of each capacitor C is another part of the insulating layer 24A.

[0064] The conductor layer 23B is a conductor pattern provided on the insulating layer 24A. The gate electrode GE of each thin film transistor constituting the drive control element DR or the switch SW is a part of the conductor layer 23B. Each gate electrode GE sandwiches the insulating layer 24A and faces the channel region of the semiconductor layer 22. In addition, the upper electrode (not shown) of each capacitor C is another part of the conductor layer 23B. Each upper electrode is sandwiched by the insulating layer 24A and faces the lower electrode of the capacitor C including the upper electrode. The conductor layer 23B is composed of a metal or an alloy. The conductor layer 23B may have a single-layer structure or a multi-layer structure.

[0065] The insulating layer 24B covers the conductive layer 23B and the insulating layer 24A. The insulating layer 24B is an interlayer insulating film. The insulating layer 24B is made of, for example, an inorganic insulator such as silicon oxide. The insulating layer made of an inorganic insulator can be formed by, for example, a plasma CVD (chemical vapor deposition) method.

[0066] like Figure 4 As shown, the conductor layer 23C is a conductor pattern provided on the insulating layer 24B. The conductor layer 23C constitutes the scanning signal line SSL. The source electrode SE and the drain electrode DE may be provided on the insulating layer 24B instead of being provided on the insulating layer 24A. That is, the scanning signal line SSL, the source electrode SE, and the drain electrode DE may also be constituted by the conductor layer 23C.

[0067] The insulating layer 24C covers the conductive layer 23C and the insulating layer 24B. The insulating layer 24C is a passivation film and is made of an inorganic insulator such as silicon nitride.

[0068] The conductor layer 23D is a conductor pattern provided on the insulating layer 24C. The conductor layer 23D constitutes electrode pads arranged in the X direction and the Y direction corresponding to the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB. In the stacked body composed of the insulating layers 24A, 24B, and 24C, a through hole is provided at the position of the drain electrode DE connected to the drain of the drive control element DR. Each electrode pad is connected to the drain electrode DE via the through hole. The conductor layer 23D is composed of, for example, metal or alloy. The conductor layer 23D may have a single-layer structure or a multi-layer structure.

[0069] The contour of the orthographic projection of each electrode pad onto a plane perpendicular to the Z direction is separated from the orthographic projection of the light emitting element 25 disposed on the electrode pad onto the above-mentioned plane, and surrounds the orthographic projection of the light emitting element 25. That is, the electrode pad is larger in the direction perpendicular to the Z direction than the light emitting element 25. Therefore, the electrode pad also functions as a reflective layer that reflects light traveling toward the substrate 21. The electrode pad may not be responsible for the role of the reflective layer. In this case, the reflective layer that plays this role may be provided separately from the electrode pad or may not be provided.

[0070] Figure 3 as well as Figure 4 The light emitting element 25 shown is Figure 2 The light emitting element D shown. The light emitting element 25 is arranged on the electrode pad.

[0071] Here, the light emitting element 25 is a light emitting diode made of an inorganic substance. In addition, a substrate including a light emitting diode as the light emitting element 25 is sometimes referred to as an "LED substrate".

[0072] The light emitting element 25 has a multilayer structure including a plurality of layers, for example, a first layer 251, a second layer 252, and a third layer 253. Here, the stacking direction of the layers included in the light emitting element 25 is the Z direction. The stacking direction may be perpendicular to the Z direction.

[0073] Each light emitting element 25 includes an anode and a cathode. The light emitting element 25 has an anode and a cathode on one surface. The anode of the light emitting element 25 is connected to the electrode pad via a bonding wire (not shown). In the case where the light emitting element 25 has an anode on one surface and a cathode on the other surface, the light emitting element 25 can be bonded to the electrode pad and the anode can be connected to the electrode pad by die-bonding using a conductive material such as a conductive paste as a bonding material. In the case where the light emitting element 25 has an anode and a cathode on one surface, the conductor layer 28 can be omitted, and an electrode pad for connecting to the cathode of the light emitting element 25 can be further provided on the insulating layer 24C, and wiring connected to these electrode pads can be further provided between the insulating layers, and the light emitting element 25 can be bonded to the electrode pad and the conductor layer 28, and the anode and cathode can be connected to the electrode pad by flip-chip bonding.

[0074] The size of the light emitting element 25 in the X and Y directions is preferably in the range of 1 to 100 μm, more preferably in the range of 5 to 80 μm, and further preferably in the range of 10 to 60 μm. The size of the light emitting element 25 in the Z direction is preferably in the range of 1 to 20 μm, more preferably in the range of 1 to 15 μm, and further preferably in the range of 1 to 10 μm.

[0075] The partition layer 26 is provided on the insulating layer 24C. The partition layer 26 has through holes at the positions of the electrode pads. The light-emitting elements 25 are respectively located in these through holes. The partition layer 26 is made of, for example, resin. Such a partition layer 26 can be formed by photolithography using a photosensitive resin. The partition layer 26 may also include a resin layer having through holes, and a reflective layer covering the side walls of the through holes and the upper surface of any resin layer. The reflective layer may have a single-layer structure or a multi-layer structure. The layers included in the reflective layer are, for example, metals, alloys, or transparent dielectrics. The partition layer 26 may be omitted.

[0076] The filling layer 27 fills the gap between the light emitting element 25 and the partition layer 26. The filling layer 27 is a light-transmitting layer that transmits the light emitted by the light emitting element 25. In addition, the filling layer 27 also functions as a protective layer for protecting the light emitting element 25 and the joint between the light emitting element 25 and the electrode. The filling layer 27 is composed of, for example, a resin. The refractive index of the filling layer 27 is preferably different from the refractive index of the material constituting the surface of the partition layer 26.

[0077] The conductor layer 28 is provided on the partition layer 26 and the filling layer 27. The cathode of the light emitting element 25 is connected to the conductor layer 28. When the conductor layer 28 is composed of a conductive transparent oxide, it can be provided to cover the entire cathode of the light emitting element 25. When the conductor layer 28 is composed of a metal or an alloy, it is preferably provided to partially cover the cathode of the light emitting element 25.

[0078] The black matrix substrate 3 faces the dimming device 2A. Specifically, the black matrix substrate 3 faces the substrate 21 with the light emitting element 25 and the like interposed therebetween.

[0079] The black matrix substrate 3 includes a transparent substrate 31, a black matrix 32, a resin layer 34, a reflective layer 35, a color filter including a first colored layer 33R and a second colored layer 33G, a base layer 33B, a first wavelength conversion layer 36R, a second wavelength conversion layer 36G, and a filling layer 36B.

[0080] The transparent substrate 31 has visible light transmittance. The transparent substrate 31 is, for example, a colorless substrate. The transparent substrate 31 may have a single-layer structure or a multi-layer structure. The transparent substrate 31 is, for example, made of glass, a transparent resin, or a combination thereof. The transparent substrate 31 may be hard or flexible. The transparent substrate 31 has a first main surface facing the dimming device 2A and a second main surface as the back surface thereof.

[0081] The black matrix 32 is disposed on the first main surface of the transparent substrate 31. The black matrix 32 is a black layer that blocks visible light. The black matrix 32 is composed of, for example, a mixture including an adhesive resin and a colorant. The colorant is, for example, a mixture of black pigment or pigments that appear black by subtractive color mixing, such as a mixture containing a blue pigment, a green pigment, and a red pigment. According to one example, the black matrix 32 is a layer of a carbon material containing graphite, graphene, and carbon nanotubes. According to other examples, the black matrix 32 is a laminate of a chromium layer and a chromium oxide layer.

[0082] The black matrix 32 has first through holes at the positions of the light emitting elements 25. The opening of each first through hole on the transparent substrate 31 side has a larger dimension in the direction perpendicular to the Z direction than the light emitting element 25.

[0083] Here, if Figure 1 As shown by the middle dotted line, the opening of the transparent substrate 31 side of the first through hole has a shape extending in the Y direction. The portions corresponding to the pixel PX in the black matrix 32 include a first through hole arranged at the position of the first sub-pixel PXR, a first through hole arranged at the position of the second sub-pixel PXG, and a first through hole arranged at the position of the third sub-pixel PXB, and these three first through holes are arranged in the X direction. A plurality of first through hole groups formed by these three first through holes are arranged in the X direction and the Y direction. The distance between adjacent first through hole groups in the X direction is greater than the distance between the first through holes included in the same through hole group. The distance between adjacent first through hole groups in the Y direction is also greater than the distance between the first through holes included in the same through hole group.

[0084] The aperture ratio of the black matrix 32 is preferably in the range of 5 to 66%, more preferably in the range of 5 to 40%, and further preferably in the range of 5 to 20%. The light-emitting diode composed of inorganic substances can emit light brightly and has a long life even when the light emission surface is small. Therefore, in the case where the light-emitting element 25 is a light-emitting diode composed of inorganic substances, even if the aperture ratio of the black matrix 32 is reduced, a bright display can be performed. Moreover, when the aperture ratio of the black matrix 32 is reduced, the reflection of external light can be suppressed, and a deeper black can be displayed, thereby achieving a higher contrast.

[0085] The thickness of the black matrix 32 is preferably in the range of 0.1 to 30 μm, more preferably in the range of 1 to 15 μm, and further preferably in the range of 1 to 5 μm. A thicker black matrix 32 is advantageous in achieving higher light shielding properties. However, when the black matrix 32 is thickened, in the pattern exposure to the coating film composed of the photosensitive black composition, the light cannot reach the deep part of the coating film with sufficient intensity, and it may not be possible to achieve higher shape accuracy.

[0086] like Figure 3 as well as Figure 4 As shown, the resin layer 34 is provided on the black matrix 32. According to one example, the resin layer 34 is transparent. In this case, the resin layer 34 may be colored or colorless. The resin layer 34 may also have light scattering properties. The transparent resin layer 34 is preferably such that, for example, when the film thickness is assumed to be 5 μm, the maximum value of the transmittance of light in the range of 350 to 480 nm incident in the thickness direction thereof is 20% or more.

[0087] The resin layer 34 has second through holes at the positions of the first through holes. These second through holes constitute a second through hole group corresponding to the first through hole group. Here, the second through hole group is composed of three second through holes arranged in the X direction. The second through hole group is arranged in the first direction and the second direction intersecting each other, in this case, the X direction and the Y direction.

[0088] The distance W between the adjacent second through hole groups in the X direction x 1 is greater than the distance W1 between the second through holes included in the same through hole group. The distance W1 between the second through hole groups adjacent to each other in the Y direction y 1 is also larger than the distance W1 between the second through holes included in the same through hole group.

[0089] The distance W1 is preferably in the range of 5 to 80 μm, more preferably in the range of 5 to 40 μm, and further preferably in the range of 5 to 20 μm.

[0090] Distance W x1 is preferably in the range of 5 to 250 μm, more preferably in the range of 50 to 250 μm, further preferably in the range of 100 to 250 μm.

[0091] Distance W y 1 is preferably in the range of 5 to 250 μm, more preferably in the range of 5 to 100 μm, further preferably in the range of 5 to 50 μm.

[0092] Distance W x The ratio W of 1 to the distance W1 x 1 / W1 is preferably in the range of 0.1 to 50, more preferably in the range of 2 to 20, and further preferably in the range of 5 to 15. x 1 can be equal to the distance W1 or smaller than the distance W1.

[0093] Distance W y The ratio W of 1 to the distance W1 y 1 / W1 is preferably in the range of 0.1 to 50, more preferably in the range of 0.1 to 10, and further preferably in the range of 0.1 to 5. Distance W y 1 can be equal to the distance W1 or smaller than the distance W1.

[0094] Here, the second through hole is arranged so that the outline of the opening on the transparent substrate 31 side projected onto the first main surface (hereinafter referred to as the second outline) respectively surrounds the outline of the first through hole projected onto the first main surface (hereinafter referred to as the first outline). The second outline may not surround the first outline. In the structure where the second outline surrounds the first outline, compared with the structure where the second outline does not surround the first outline, the influence of stray light on the display is smaller.

[0095] The portion of the resin layer 34 sandwiched between the adjacent second through holes has a forward tapered cross-sectional shape. This portion may have a rectangular cross-sectional shape, an inverted tapered cross-sectional shape, or other cross-sectional shapes.

[0096] The thickness of the resin layer 34 is preferably in the range of 5 to 50 μm, more preferably in the range of 5 to 40 μm, and further preferably in the range of 10 to 25 μm. When the thickness of the resin layer 34 is small, it is difficult to increase the total thickness of the layers formed in the second through hole. When the resin layer 34 is thickened, the shape accuracy of the partition wall portion sandwiched between adjacent second through holes is reduced.

[0097] The reflective layer 35 at least partially covers the sidewalls of each of the second through holes and the upper surface of the resin layer 34. Figure 3 to Figure 4As shown, the reflective layer 35 covers the entire side wall of each second through hole, the entire upper surface of the resin layer 34, and the portion of the black matrix 32 not covered by the resin layer 34. The reflective layer 35 may not cover a portion of the side wall of the second through hole. For example, the reflective layer 35 may not cover at least one of the portion near the black matrix 32 in at least one side wall of the second through hole and the portion near the upper surface of the resin layer 34 in at least one side wall of the second through hole. In addition, the reflective layer 35 may not cover the portion of the black matrix 32 not covered by the resin layer 34.

[0098] The portion of the reflective layer 35 located in the second through hole opens at the position of the first colored layer 33R, the second colored layer 33G, or the base layer 33B. The area S2 of each of these openings is preferably larger than the area S1 of the opening of the first through hole. The ratio S2 / S1 of the area S2 to the area S1 is preferably in the range of 1 to 100, more preferably in the range of 1 to 30, and further preferably in the range of 1 to 2.

[0099] The reflective layer 35 may have a single layer structure or a multilayer structure. The layer included in the reflective layer 35 is, for example, a metal, an alloy, or a transparent dielectric. From the viewpoint of thermal conductivity, the reflective layer 35 preferably includes a layer composed of a metal or an alloy. According to an example, the reflective layer 35 is composed of aluminum, an aluminum alloy, or a neodymium alloy.

[0100] The thickness of the portion of the reflective layer 35 covering the upper surface of the resin layer 34 is preferably in the range of 100 to 500 nm, more preferably in the range of 100 to 250 nm. When the reflective layer 35 is thickened, the thermal conductivity in the in-plane direction is improved. However, when the reflective layer 35 is thickened, the manufacturing cost increases.

[0101] The reflective layer 35 can be formed, for example, by sequentially performing the following steps: film formation based on a vapor deposition method such as sputtering and vacuum evaporation; formation of an etching mask; and etching such as wet etching. The etching mask can be formed by photolithography using a photosensitive resin. The transparent resin layer used as the etching mask may or may not be removed after the above-mentioned etching.

[0102] like Figure 3 as well as Figure 4 As shown in FIG. 1 , the first colored layer 33R fills the first through hole at the position of the first sub-pixel PXR. As described above, here, the first colored layer 33R is a red colored layer.

[0103] like Figure 3 As shown in FIG. 1 , the second colored layer 33G fills the first through hole at the position of the second sub-pixel PXG. As described above, here, the second colored layer 33G is a green colored layer.

[0104] like Figure 3 As shown in FIG. 1 , the base layer 33B fills the first through hole at the position of the third sub-pixel PXB. As described above, here, it is a colorless light-transmitting layer or a blue colored layer.

[0105] The first wavelength conversion layer 36R is provided on the first coloring layer 33R, and fills at least the bottom of the second concave portion. The first wavelength conversion layer 36R is a layer containing a fluorescent substance such as a quantum dot fluorescent substance and a transparent resin. As described above, here, the first wavelength conversion layer 36R converts the blue light emitted by the light emitting element D of the first sub-pixel PXR into red light.

[0106] The second wavelength conversion layer 36G is provided on the second coloring layer 33G, and fills at least the bottom of the second concave portion. The second wavelength conversion layer 36G is a layer containing a fluorescent substance such as a quantum dot fluorescent substance and a transparent resin. As described above, here, the second wavelength conversion layer 36G converts the blue light emitted by the light emitting element D of the second sub-pixel PXG into red light.

[0107] The filling layer 36B is provided on the base layer 33B, and fills at least the bottom of the second recess. As described above, the filling layer 36B is a colorless and transparent layer. In this case, the filling layer 36B is made of, for example, a transparent resin.

[0108] The adhesive layer 4 is interposed between the dimming device 2A and the black matrix substrate 3 to bond them to each other. The adhesive layer 4 transmits the light emitted by the light emitting element 25. The adhesive layer 4 is, for example, a colorless and transparent layer. The adhesive layer 4 is made of an adhesive or a bonding agent.

[0109] In the display device 1A, the portion of the reflective layer 35 that covers the upper surface of the resin layer 34 has an arithmetic mean height S a In the range of 40 to 650nm, the sharpness S ku The portion of the reflective layer 35 that covers the side wall of the second through hole provided in the resin layer 34 also preferably has an arithmetic mean height S of 3. a In the range of 40 to 650nm, the sharpness S ku is greater than 3. These arithmetic mean heights S a It is preferably 100 nm or more, and also preferably 400 nm or less. ku For example, it is less than 6. ku Indicates the sharpness of the height distribution.

[0110] In the display device 1A, the light emitting element 25 is the main heat source. Part of the heat generated in the light emitting element 25 is conducted to the reflective layer 35 via the adhesive layer 4. When the portion of the reflective layer 35 covering the upper surface of the resin layer 34 has the above-mentioned surface properties, heat exchange between the adhesive layer 4 and the reflective layer 35 can be more efficiently generated compared to the case where the portion is smoother.

[0111] In addition, among the elements located between the adhesive layer 4 and the transparent substrate 31, the reflective layer 35 has particularly excellent thermal conductivity. Moreover, in the display device 1A, the reflective layer 35 not only covers the upper surface of the resin layer 34, but also covers the side walls of the through holes provided in the resin layer 34, and further partially covers the black matrix 32. That is, the reflective layer 35 includes a portion located near the transparent substrate 31 in addition to the portion adjacent to the adhesive layer 4. Moreover, the black matrix 32 sandwiched between the reflective layer 35 and the transparent substrate 31 is composed of black materials such as carbon-containing resin and chromium oxide. These black materials are materials with high thermal conductivity. Therefore, the heat conducted from the adhesive layer 4 to the reflective layer 35 is quickly conducted to the transparent substrate 31.

[0112] Therefore, the display device 1A can quickly dissipate part of the heat generated in the light emitting element 25 to the outside air via the black matrix substrate 3. Therefore, the display device 1A is less likely to accumulate heat inside and has excellent heat dissipation.

[0113] As described above, the display device 1A has excellent heat dissipation properties, and thus is less likely to suffer from degradation, reduction in brightness, and color difference as described below.

[0114] In recent years, in the face of the expansion of the use of display devices, in order to improve outdoor visibility, it is necessary to increase the output and realize a high-brightness display device. However, when the output is high in a display device using a light-emitting diode, due to the heat generated by the light-emitting diode, sometimes there will be undesirable conditions such as thermal degradation of components such as wiring and sealing resin located near it. In addition, phosphors such as quantum dots will produce thermal degradation and brightness reduction and color difference (shift of the wavelength representing the maximum intensity in the visible region; hereinafter referred to as wavelength shift) when emitting light at high temperatures. In particular, in a display device including a light-emitting diode and having a structure in which a pair of substrates are bonded via an adhesive layer, the light-emitting diode as a heat source is isolated from the atmosphere, so it is easy to accumulate heat inside. Therefore, in a high-brightness display device that uses a phosphor such as quantum dots to convert short-wavelength light (blue light or ultraviolet light) emitted by a light-emitting diode into blue, green and red light for full-color display, excellent heat dissipation is required.

[0115] As described above, the display device 1A dissipates part of the heat generated in the light emitting element 25 to the outside of the display device 1A quickly via the black matrix substrate 3. Therefore, the display device 1A is unlikely to accumulate heat inside, and the inside temperature is unlikely to become too high. Therefore, the display device 1A is unlikely to cause degradation of quantum dots, brightness reduction, and color difference (wavelength shift).

[0116] In addition, when the portion of the reflective layer 35 covering the side wall of the second through hole provided in the resin layer 34 has the above-mentioned surface properties, the portion can appropriately scatter the light from the light emitting element 25. As a result, the wavelength conversion efficiency in the first wavelength conversion layer 36R and the second wavelength conversion layer 36G is improved, and high brightness or low power consumption can be achieved.

[0117] The reflective layer 35 having the above-mentioned surface properties can be obtained by, for example, performing a surface roughening treatment such as an O2 plasma treatment on the resin layer 34 and then forming the reflective layer 35. That is, by performing the surface roughening treatment, the arithmetic mean height S of the resin layer 34 can be increased. a And the sharpness S ku , so the arithmetic mean height S of the reflective layer 35 can also be increased a And the sharpness S ku For example, by calculating the arithmetic mean height S a The arithmetic mean height S can be obtained by performing O2 plasma treatment on the 30nm thick resin layer. a The reflective layer 35 is 40 nm or more.

[0118] The reflective layer 35 having the above-mentioned surface properties can also be obtained by including particles in the material of the resin layer 34. By appropriately setting the particle size and content of the particles, the resin layer 34 having the desired surface properties can be obtained, and thus the reflective layer 35 having the above-mentioned surface properties can also be obtained.

[0119] When the material of the resin layer 34 contains particles, these particles are preferably composed of a highly thermally conductive material such as a metal oxide. In this case, the thermal conductivity of the resin layer 34 is improved, and the heat dissipation is improved.

[0120] When the material of the resin layer 34 contains particles, the proportion of the particles in the material is preferably 50 volume % or less, more preferably 20 volume % or less. If the proportion is increased, the shape accuracy of the resin layer 34 decreases.

[0121] In order to obtain the above-mentioned light scattering effect, the portion of the reflective layer 35 that covers the side wall of the second through hole provided in the resin layer 34 preferably has an arithmetic mean height S a It is about the same as the wavelength in the visible region.

[0122] The portion of the reflective layer 35 that covers the upper surface of the resin layer 34 and the portion that covers the side wall of the second through hole provided in the resin layer 34 preferably has an arithmetic mean height S of 1. a In order to form the arithmetic mean height S of these parts a The larger reflective layer 35 needs to form an arithmetic mean height S a A larger resin layer 34 is formed. In such a resin layer 34, when a part of the reflective material layer is removed by etching in order to form the reflective layer 35 thereon, etching residue is easily generated. a When it is too large, the peeling property of the protective resist used as a mask during etching is reduced.

[0123] In addition, in the display device 1A, the black matrix substrate 3 includes a partition layer composed of a resin layer 34 provided with a second through hole and a reflective layer 35 covering the resin layer 34. The structure in which the partition layer including the resin layer having the through hole and the metal layer covering the resin layer 34 is provided on the black matrix substrate is conducive to the repair of the LED substrate before the LED substrate is bonded to the black matrix substrate. This is described below.

[0124] In order to increase the brightness of micro-LED displays, it is more effective to increase the reflectivity of the partitions that separate the light-emitting diodes. In addition, in order to prevent color mixing between adjacent pixels, it is necessary to improve the light-shielding properties of the partitions. Based on the above situation, a partition that can take into account both high reflectivity and light-shielding properties is required.

[0125] When the partition wall layer including the partition walls has a structure in which a reflective layer is formed on a resin layer having through holes, it is possible to achieve ease of production, high reflectivity, and high light shielding properties.

[0126] When forming a resin layer having through holes, it is preferable to use a known photolithography method including exposure and development steps. However, it is difficult to uniformly form a photoresist film on an LED substrate having large unevenness on the surface. In addition, when forming the resin layer, the LED substrate may be defective during the process of contacting with the solution such as photoresist coating and development.

[0127] In order to solve the above problem, a protective film can be formed on the light emitting diode. However, if a defect is found in the light emitting diode after the protective film is formed, the LED substrate cannot be repaired, which results in a significant reduction in yield.

[0128] When a partition layer including a resin layer having a through hole and a metal layer covering the resin layer is provided on a black matrix substrate, it is not necessary to form a partition with a large height on the LED substrate, and the partition can be omitted from the LED substrate according to circumstances. Therefore, it is possible to achieve ease of manufacturing, high reflectivity, and high light-shielding properties without reducing the yield rate.

[0129] <2> Second Embodiment

[0130] Figure 5 It is a cross-sectional view showing a part of a display device according to a second embodiment of the present invention.

[0131] Figure 5 The display device 1B shown is the same as the display device 1A except that the following configuration is adopted. That is, the display device 1B includes a dimming device 2B instead of the dimming device 2A, and the dimming device 2B is the same as the dimming device 2A except that one or more through holes extending in the Z direction are provided. In addition, the display device 1B also includes a heat sink 5 and a heat conductor.

[0132] The heat sink 5 is located outside the laminated body composed of the dimming device 2A, the black matrix substrate 3, and the adhesive layer 4. Here, the heat sink 5 is a back heat sink disposed facing the black matrix substrate 3 with the dimming device 2B and the adhesive layer 4 sandwiched therebetween. More specifically, here, the heat sink 5 is a back heat sink layer disposed on the dimming device 2B.

[0133] The heat sink 5 is made of a high thermal conductivity material. Examples of high thermal conductivity materials include metals such as copper, aluminum, iron, silver, titanium, molybdenum, tantalum, tungsten, and niobium; alloys containing one or more of these metals; carbides such as tungsten carbide; carbon materials such as graphite, graphene, carbon nanotubes, and diamond; other insulating ceramics; or composite materials containing one or more of these. The heat sink 5 may have a single-layer structure or a multi-layer structure.

[0134] The surface of the heat sink 5 is flat. The heat sink 5 with a flat surface can be formed, for example, by forming a film on the dimming device 2A. Alternatively, the heat sink 5 with a flat surface can be attached to the dimming device 2B and then installed on the dimming device B. The heat sink 5 with a flat surface is easy to form or install on the dimming device 2B.

[0135] The surface of the heat sink 5 may have irregularities. For example, the heat sink 5 may have a plurality of fins or pins on the surface. Such a heat sink 5 has a large surface area and excellent heat dissipation.

[0136] The apparent area S of the heat sink 5 is RB (without considering the area of ​​the concave and convex) and the area S of the back side of the dimming device 2A B Ratio SRB / S B It is preferably 0.005 or more, and more preferably 0.5 or more. RB / S B The larger the size, the better the heat dissipation. RB / S B The upper limit value of is, for example, 1. RB / S B It can also be greater than 1.

[0137] The minimum thickness of the heat sink 5 is preferably 50 μm or more, and more preferably 500 μm or more. When the minimum thickness of the heat sink 5 is increased, the heat capacity of the heat sink 5 increases, and the thermal resistance of the heat sink 5 decreases. There is no upper limit to the minimum thickness of the heat sink 5, but when the minimum thickness of the heat sink 5 is increased, the display device 1B becomes thicker. From this viewpoint, the minimum thickness of the heat sink 5 is preferably 5 mm or less.

[0138] The heat conductor is provided inside the stacked body and conducts heat from the reflective layer 35 to the heat sink 5 .

[0139] Here, the heat conductor is composed of the main heat conductor 29 and the auxiliary heat conductor 6. In addition, here, the heat conductor is at least partially located in the through hole of the dimming device 2B.

[0140] Specifically, the main heat-generating body 29 is made of a high thermal conductivity material that fills the through hole provided in the dimming device 2B. The main heat-generating body 29 may also cover the side wall of the through hole provided in the dimming device 2B with a high thermal conductivity material. The main heat-generating body 29 promotes heat conduction from the reflective layer 35 to the radiator 5.

[0141] The auxiliary heat conductor 6 is provided between the main heat conductor 29 and the reflective layer 35. The auxiliary heat conductor 6 is made of a material with high thermal conductivity. The auxiliary heat conductor 6 promotes heat conduction from the reflective layer 35 to the main heat conductor 29. The auxiliary heat conductor 6 can be omitted.

[0142] As described above, the main heat conductor 29 and the auxiliary heat conductor 6 are made of a high thermal conductivity material. As the high thermal conductivity material, for example, the materials exemplified for the heat sink 5 can be used. The main heat conductor 29 and the auxiliary heat conductor 6 may each have a single-layer structure or a multi-layer structure.

[0143] In the display device 1B, the light emitting element 25 is the main heat source. Another part of the heat generated in the light emitting element 25 is dissipated to the outside air through the black matrix substrate 3 as in the display device 1A. Another part of the heat generated in the light emitting element 25 is conducted to the heat sink 5 provided outside the above-mentioned stacked body through the reflective layer 35 and the heat conductor. Therefore, the display device 1B is less likely to accumulate heat inside the above-mentioned stacked body, and has particularly excellent heat dissipation.

[0144] In the display device 1B, the heat sink 5 is provided on the back surface, so the heat sink 5 does not hinder the display. Therefore, the heat sink 5 can adopt various structures.

[0145] Furthermore, in the display device 1B, a partition layer including a resin layer having a through hole and a metal layer covering the resin layer is also provided on the black matrix substrate, so there is no need to form a partition with a large height on the LED substrate, and the partition can be omitted from the LED substrate according to circumstances. Therefore, it is possible to achieve ease of manufacturing, high reflectivity, and high light shielding without reducing the yield rate.

[0146] <3> Modification example

[0147] The above-mentioned display device and black matrix substrate can be variously modified as exemplified below.

[0148] For example, in the display device 1B, the heat conductor that thermally connects the reflective layer 35 to the heat sink 5 may be at least partially located outside the stack of the dimming device 2B, the black matrix substrate 3, and the adhesive layer 4. For example, the heat conductor may be provided on the end surface of the stack.

[0149] Alternatively, the display device 1A may further include a front heat dissipation layer as a heat dissipation body, the front heat dissipation layer being provided on the second main surface of the transparent substrate 31 and opening at the position of the first through hole provided in the black matrix 32. In this case, the display device 1A may further include a heat conductor that thermally connects the reflective layer 35 to the front heat dissipation layer. The heat conductor may be provided inside the laminated body composed of the dimming device 2A, the black matrix substrate 3, and the adhesive layer 4, or may be provided to be at least partially located outside the laminated body.

[0150] In an electronic device including a display device, the front surface of the display device is usually exposed to the outside of the electronic device, and the back surface of the display device is disposed in a housing in such a manner as to be adjacent to the internal space of the housing. Therefore, when the display device 1A having a front surface heat dissipation layer as a heat dissipator is mounted in the electronic device, heat exchange between the heat dissipator and the outside air is easily generated.

[0151] The display device 1B may further include the above-mentioned front heat dissipation layer. In this case, the display device 1B may further include a heat conductor that thermally connects the reflective layer 35 and the front heat dissipation layer.

[0152] The circuits provided in the dimming devices 2A and 2B can be configured in the same manner as Figure 2 Different composition.

[0153] For example, the image signal line driver VDR may supply a current signal as an image signal to the image signal line VSL. In this case, each of the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB may be configured such that during a writing period of the image signal, the gate-source voltage of the drive control element DR is set to a value corresponding to the current signal, and during a light-emitting period, a drive current having a magnitude corresponding to the gate-source voltage flows to the light-emitting element D. In addition, in the dimming devices 2A and 2B, a circuit for displaying an image by a passive matrix drive method may be used instead of a circuit for displaying an image by an active matrix drive method.

[0154] As the light emitting element 25, an ultraviolet light emitting diode may be used instead of a blue light emitting diode. In this case, the filling layer 36B is a wavelength conversion layer that converts the light emitted by the light emitting element 25 of the third sub-pixel PXB into a third light having a color different from the first light and the second light. For example, the first wavelength conversion layer 36R, the second wavelength conversion layer 36G, and the filling layer 36B convert the ultraviolet light emitted by the light emitting element 25 into red light, green light, and blue light, respectively.

[0155] As the light emitting element 25, a plurality of types of light emitting diodes may be used instead of a single type of light emitting diode. For example, a red light emitting diode, a green light emitting diode, and a blue light emitting diode may be used in the first sub-pixel PXR, the second sub-pixel PXG, and the third sub-pixel PXB, respectively. In this case, the same layer as that described above for the base layer 33B may be provided instead of the first coloring layer 33R and the second coloring layer 33G, and the same layer as that described above for the filling layer 36B may be provided instead of the first wavelength conversion layer 36R and the second wavelength conversion layer 36G.

[0156] The above-mentioned display device can display color images, but the display device can also display black and white images. For example, in the display device 1A, the first sub-pixel PXR and the second sub-pixel PXG are omitted, a blue light-emitting diode is used as the light-emitting element 25, and the filling layer 36B is a wavelength conversion layer that converts blue light into yellow light. When the filling layer 36B can convert part of the blue light incident thereon into yellow light and transmit the remaining light, white can be displayed based on additive color mixing of blue and yellow.

[0157] The black matrix substrate may further include an outer coating layer sandwiched between the black matrix 32 and the resin layer 34. The outer coating layer may include one or more of a transparent resin, an ultraviolet absorber, a yellow pigment, and transparent particles. When the stray light incident on the resin layer 34 is ultraviolet light, the outer coating layer including the ultraviolet absorber can absorb it.

[0158] The display device may be an organic electroluminescent display device or the like other than a micro LED display device. However, the display device preferably includes a light emitting element.

[0159] Description of Reference Numerals

[0160] 1A: display device, 1B: display device, 2A: dimming device, 2B: dimming device, 3: black matrix substrate, 4: adhesive layer, 5: heat sink, 6: auxiliary heat conductor, 21: substrate, 22: semiconductor layer, 23A: conductor layer, 23B: conductor layer, 23C: conductor layer, 23D: conductor layer, 24A: insulating layer, 24B: insulating layer, 24C: insulating layer, 25: light emitting element, 26: partition layer, 27: filling layer, 28: conductor layer, 29: main heat conductor, 31: transparent substrate, 32: black matrix, 33B: base layer, 33G: second coloring layer , 33R: first coloring layer, 34: resin layer, 35: reflective layer, 36B: filling layer, 36G: second wavelength conversion layer, 36R: first wavelength conversion layer, 251: first layer, 252: second layer, 253: third layer, C: capacitor, D: light-emitting element, DR: drive control element, PSL: power line, PX: pixel, PXB: third sub-pixel, PXG: second sub-pixel, PXR: first sub-pixel, SDR: scan signal line driver, SSL: scan signal line, SW: switch, VDR: image signal line driver, VSL: image signal line.

Claims

1. A black matrix substrate, comprising: A transparent substrate having a first main surface and a second main surface; A black matrix, disposed on the first main surface, having a plurality of first through holes; A resin layer, disposed on the black matrix, having a plurality of second through holes at positions of the plurality of first through holes; as well as a reflective layer that at least partially covers the side walls of each of the plurality of second through holes and the upper surface of the resin layer, The portion of the reflective layer that covers the upper surface has an arithmetic mean height S a In the range of 40 to 650nm, the sharpness S ku 3 or more.

2. The black matrix substrate according to claim 1, wherein: The portion of the reflective layer that covers the side wall has an arithmetic mean height S a In the range of 40 to 650nm, the sharpness S ku 3 or more.

3. The black matrix substrate according to claim 1 or 2, wherein: The reflective layer also partially covers the black matrix.

4. The black matrix substrate according to any one of claims 1 to 3, wherein The method further includes a plurality of wavelength conversion layers respectively disposed in at least a portion of the plurality of second through holes.

5. The black matrix substrate according to any one of claims 1 to 4, wherein The device further includes a color filter including a plurality of coloring layers respectively arranged at positions of at least a portion of the plurality of first through holes.

6. The black matrix substrate according to any one of claims 1 to 5, wherein: The reflective layer includes a layer composed of a metal or an alloy.

7. A display device comprising: The black matrix substrate according to any one of claims 1 to 6; a dimming device, arranged facing the first main surface; and The adhesive layer is sandwiched between the black matrix substrate and the dimming device to bond them together.

8. The display device according to claim 7, further comprising: a heat sink located outside the laminate consisting of the black matrix substrate, the dimming device, and the adhesive layer; and A heat conductor conducts heat from the reflective layer to the heat sink.

9. The display device according to claim 8, wherein: The heat sink includes a back heat sink disposed facing the black matrix substrate with the dimming device and the adhesive layer interposed therebetween.

10. The display device according to claim 9, wherein: The back heat sink is a back heat dissipation layer arranged on the dimming device.

11. The display device according to any one of claims 8 to 10, wherein: The dimming device is provided with one or more through holes, and the heat conductor is at least partially located in the one or more through holes.

12. The display device according to any one of claims 7 to 11, wherein: The dimming device includes a plurality of light emitting elements.

13. The display device according to any one of claims 7 to 12, wherein: The dimming device includes a plurality of light emitting diodes.

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