Gas distribution and supply device for magnetron sputtering

By designing a gas distribution structure including a detachable sleeve, a vent pipe and a pore in a magnetron sputtering device, the problem of poor uniformity of the process gas is solved, the film quality is improved and the gas consumption is saved.

CN119433473AActive Publication Date: 2025-02-14CNBM RESEARCH INSTITUTE FOR ADVANCED GLASS MATERIALS GROUP CO LTD
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Patent Information

Application Number
CN202411538426.2
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-10-31
Publication Date
2025-02-14
Estimated Expiration
2044-10-31

AI Technical Summary

Technical Problem

In the existing magnetron sputtering technology, the uniformity of the process gas is poor, resulting in poor film quality and excessive use of process gas, resulting in waste and increased production costs.

Method used

A magnetron sputtering gas distribution structure is designed, including the main air pipe and the gas distribution unit at both ends. The gas distribution unit is composed of a detachable sleeve, a gas distribution tube and a vent hole. The length of the vent pipe decreases and the air pores are distributed in the sleeve. On the side wall of the cathode, the process gas evenly covers the surface of the cathode target through the air holes.

Benefits of technology

Through this gas distribution structure, the uniformity of the process gas is improved, the uniformity and quality of the film is enhanced, and the amount of process gas is saved and the production cost is reduced.

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Abstract

The invention provides a gas distribution structure for magnetron sputtering, which comprises a main gas pipe (1) and is characterized in that two gas distribution units (2) are respectively arranged at two ends of the main gas pipe (1), and correspondingly matched cathodes (3) are arranged between the two gas distribution units (2). According to the gas distribution structure provided by the invention, the uniformity of the process gas is improved, so that the quality of a film formed by magnetron sputtering is improved, the gas distribution quantity of the cathode target material can be more conveniently adjusted, and the process gas can be uniformly covered on the surface of the target material and the consumption of the process gas is also saved because the process gas is directly sprayed on two sides of the cathode.
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Description

Technical Field

[0001] The invention relates to the field of magnetron sputtering, in particular to a gas distribution and supply device for magnetron sputtering. Background Art

[0002] With the widespread application of magnetron sputtering technology in the field of thin films, the quality requirements for thin films are getting higher and higher. Among them, the uniformity of the thin film is particularly important. The existing conventional gas distribution method uses a pipe directly connected to the chamber or cathode. When the sample holder reciprocates, it is easy to cause the process gas flow inside the chamber to be turbulent, and when the equipment is running, the process gas flow will flow to the vacuum pump exhaust port. This has caused poor uniformity of the process gas and affected the quality of the film. In order to evenly cover the surface of the target material, it is necessary to increase the amount of process gas injection, thereby ensuring that the process gas completely and evenly covers the surface of the target material, which in turn increases the amount of process gas used, causing waste and increasing production costs. Summary of the invention

[0003] The utility model aims to overcome the deficiencies in the prior art and provide a gas distribution and supply device for magnetron sputtering.

[0004] This application provides the following technical solutions: A gas distribution structure for magnetron sputtering includes a main gas pipe, characterized in that: a gas distribution unit is respectively provided at both ends of the main gas pipe, a corresponding cathode is provided between the two gas distribution units, and the gas distribution unit includes: a sleeve detachably connected to the main gas pipe, the lower end of the sleeve is sealed, a group of gas distribution pipes are connected to the main gas pipe in the sleeve, each gas distribution pipe has a different length, and a group of air holes are evenly distributed on the wall of the sleeve on one side near the cathode.

[0005] On the basis of the above technical solutions, there are also the following further technical solutions: The group of air distribution pipes consists of five pipes distributed in a row along the diameter direction, and the lengths of the five air distribution pipes decrease gradually from the side far from the cathode to the side near the cathode.

[0006] The air distribution pipe does not contact the sleeve.

[0007] A gap is left between each of the air distribution pipes in the group of air distribution pipes, and the axial direction of each air distribution pipe is parallel to the sleeve and perpendicular to the axial direction of the main air pipe.

[0008] Advantages of the invention: The gas distribution structure provided by the present invention improves the uniformity of the process gas to improve the quality of the film formed by magnetron sputtering, and can more conveniently adjust the gas distribution amount of the cathode target. Since the process gas is directly sprayed on both sides of the cathode, it can evenly cover the target surface and save the amount of process gas. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1It is a schematic diagram of the structure of the present invention; Figure 2 yes Figure 1 A-axis enlarged view. DETAILED DESCRIPTION

[0010] like Figure 1 and 2 As shown, a gas distribution structure for magnetron sputtering includes a main gas pipe 1, to which a process gas inlet pipe 1a is connected.

[0011] An air distribution unit 2 is respectively provided at both ends of the main air pipe 1 , and a space for placing a corresponding cathode 3 is provided between the two air distribution units 2 .

[0012] The air distribution unit 2 includes: a sleeve 2a detachably connected to the main air pipe 1 by a thread, the lower end of the sleeve 2a is a sealing structure, and a group of air distribution pipes 2b with the same air output are connected to the main air pipe 1 inside the sleeve 2a. The five air distribution pipes 2b are arranged in a row along the diameter direction, and gaps are left between the air distribution pipes 2b. The axial direction of each air distribution pipe 2b is parallel to the sleeve 2a and perpendicular to the axial direction of the main air pipe 1.

[0013] The lengths of the five air distribution pipes 2b decrease one by one from the side far from the cathode 3 to the side near the cathode 3, and the decreasing lengths are the same. A group of air holes 2c are evenly distributed on the wall of the sleeve 2a on the side near the cathode 3.

[0014] When the magnetron sputtering device is working, the process gas is evenly covered on the cathode target surface through the pores 2c, thereby improving the uniformity of the film. In production, according to the actual sputtering situation, some pores 2c can be blocked by sealing mud or tape to improve the applicability of the device.

Claims

1. A gas distribution structure for magnetron sputtering, comprising a main gas pipe (1), characterized in that: An air distribution unit (2) is provided at each end of the main air pipe (1), and a corresponding cathode (3) is provided between the two air distribution units (2). The air distribution unit (2) comprises: a sleeve (2a) detachably connected to the main air pipe (1), the lower end of the sleeve (2a) being sealed, a group of air distribution pipes (2b) being connected to the main air pipe (1) in the sleeve (2a), the lengths of the air distribution pipes (2b) being different, and a group of air holes (2c) being uniformly distributed on a side wall of the sleeve (2a) close to the cathode (3).

2. The gas distribution structure for magnetron sputtering according to claim 1, characterized in that: The group of gas distribution pipes (2b) consists of five gas distribution pipes (2b) arranged in a row along the diameter direction, and the lengths of the five gas distribution pipes (2b) decrease gradually from the side far from the cathode (3) to the side near the cathode (3).

3. The gas distribution structure for magnetron sputtering according to claim 1, characterized in that: The air distribution pipe (2b) does not contact the sleeve (2a).

4. The gas distribution structure for magnetron sputtering according to claim 1, characterized in that: A gap is left between each of the air distribution pipes (2b) in the group of air distribution pipes (2b), and the axial direction of each air distribution pipe (2b) is parallel to the sleeve (2a).

Citation Information

Patent Citations

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  • Magnetron sputtering gas distribution device capable of improving gas distribution uniformity

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  • Gas distribution pipe capable of uniformly distributing gas

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  • Magnetron sputtering apparatus

    KR1020130118154A