Method for improving LPCVD quartz part transformation capacity

Abstract

The invention relates to an LPCVD (low pressure chemical vapor deposition) quartz part transformation productivity improvement method, which belongs to the technical field of wafer silicon wafer processing and comprises the following operation steps of: 1, placing a silicon wafer on a quartz boat and feeding the silicon wafer into a quartz tube; 2, the pneumatic ball valve is in a closed state, the tube plug cover is inserted into the quartz tube, and gas is conveyed into the quartz tube through the gas supply tube and the gas supply tube; and 3, after the gas in the quartz tube is saturated and pressurized, opening the pneumatic ball valve and the circulating pump, so that the gas in the quartz tube is supplemented to the gas supply tube after passing through the filter, and meanwhile, heating the heating tube to carry out an LPCVD (Low Pressure Chemical Vapor Deposition) process on the silicon wafer. 4, after the LPCVD process is completed, gas supply of the gas supply pipe and the circulating pipe is stopped, and at the moment, a pneumatic ball valve and a circulating pump are opened to enable the quartz tube to pass through a filter to be recycled. The device has the advantages of compact structure, good operation stability and remarkable productivity improvement. By improving the performance of the quartz part, the equipment stowage upper limit is prolonged; meanwhile, the cleaning technology is improved, and the cleaning period of each time is shortened.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer processing, and in particular to a method for improving the production capacity of LPCVD quartz components through modification. Background Art

[0002] LPCVD--Low Pressure Chemical Vapor Deposition is widely used for silicon oxide, nitride, and polysilicon deposition. The process is performed in a tube furnace and requires a very high temperature. The current daily production capacity of a 12-inch LPCVD is about 250 pieces, and the consumption load is 24,000A. The original quartz tube allows a load of 80,000A, and it needs to be cleaned every 3 days. Each cleaning verification takes 3 days, the actual processing days per month are 15 days, and the monthly production capacity is 3,750 pieces.

[0003] In order to meet the growing customer demand, a thickened quartz tube was designed without increasing the existing equipment to increase the stowage limit and improve the equipment capacity. If the set stowage value is exceeded, the quartz tube will break during the cleaning process, causing damage to the quartz boat and limiting the equipment capacity. Summary of the invention

[0004] The present invention mainly solves the deficiencies in the prior art and provides a method for improving the production capacity of LPCVD quartz components, which has the advantages of compact structure, good operation stability and significant production capacity improvement. The problem that frequent cleaning of existing quartz components affects production capacity is solved. By improving the performance of quartz components, the upper limit of equipment loading is extended; at the same time, the cleaning technology process is improved to shorten the cycle of each cleaning, thereby improving the equipment production capacity.

[0005] The above technical problems of the present invention are mainly solved by the following technical solutions: A method for improving the production capacity of LPCVD quartz components by modification, the LPCVD quartz components modification comprising a reaction furnace, a quartz tube is arranged in the reaction furnace, a heating tube is arranged between the quartz tube and the reaction furnace, a plurality of silicon wafers are arranged in the quartz tube, a quartz boat is arranged between the lower end of the silicon wafer and the quartz tube, an air supply pipe connected to the quartz tube is arranged at the front end of the quartz tube, a pipe plug cover is arranged between the air supply pipe and the quartz tube, an exhaust pipe extending out of the reaction furnace is arranged at the rear end of the quartz tube, and a pneumatic ball valve is arranged on the exhaust pipe.

[0006] A circulation pump is provided at the rear end of the exhaust pipe, a circulation pipe is provided between the circulation pump and the air supply pipe, a three-way valve is provided between the circulation pipe and the air supply pipe, an air supply pipe connected to the air supply pipe is provided on the three-way valve, and a filter is provided on the circulation pipe.

[0007] The method of increasing production capacity includes the following steps: Step 1: Place the silicon wafer on a quartz boat and send it into a quartz tube.

[0008] Step 2: The pneumatic ball valve is in a closed state, the pipe plug cover is inserted into the quartz tube, and the gas is transported to the quartz tube through the gas supply pipe and the gas delivery pipe.

[0009] Step 3: When the gas in the quartz tube is saturated and pressurized, open the pneumatic ball valve and the circulation pump to allow the gas in the quartz tube to pass through the filter and then be replenished to the gas supply pipe. At the same time, the heating tube is heated to increase the temperature and perform the LPCVD process on the silicon wafer.

[0010] Step 4: After completing the LPCVD process, stop the gas supply from the gas supply pipe and the circulation pipe. At this time, open the pneumatic ball valve and the circulation pump to recycle the quartz tube through the filter.

[0011] Preferably, the wall thickness of the quartz tube is increased from 2±0.3mm to 3.9±0.3mm; from the original daily production capacity of about 250 pieces, the consumption load is 24000A, the allowable load is 80000A, and cleaning is required every 3 days; after the wall thickness is increased, the upper limit of the load is 250000A, and the daily production of 250 pieces remains unchanged, the original cleaning time is increased from once every 3 days to once every 10 days, and the cleaning times per month are reduced to three times per month, and the consumption of chemical cleaning is reduced by 70%; the original monthly processing time is 15 days, which is increased to 24 days per month, with a monthly production capacity of 6000 pieces, and a capacity increase of 37.5%.

[0012] Preferably, when the loading in the quartz tube approaches the upper limit, the pipe plug cover is not installed, and the quartz tube is backwashed by opening the pneumatic ball valve and the circulation pump.

[0013] Preferably, an air supply pump is provided between the air supply pipe and the three-way valve, and a gas controller is provided between the air supply pump and the three-way valve. The gas controller controls the air supply pump to control the air supply amount to the quartz tube.

[0014] Preferably, the pipe plug cover and the exhaust pipe are both provided with pressure gauges. When the pressure value of the pressure gauge on the pipe plug cover decreases, the gas supply of the gas supply pump to the quartz tube is increased through the gas controller. When the pressure value of the pressure gauge on the exhaust pipe is too large, the gas supply of the gas supply pump to the quartz tube is reduced through the gas controller, and the pneumatic ball valve and the circulation pump are opened at the same time.

[0015] Preferably, an energy storage tank is provided between the exhaust pipe and the pneumatic ball valve, and the energy storage tank is used to prevent the gas pressure value in the quartz tube from fluctuating unstably.

[0016] Preferably, the reaction furnace is provided with a temperature controller which is in electrical circuit communication with the heating tube, and the temperature required by the quartz tube is monitored and controlled and adjusted in real time through the temperature controller.

[0017] The present invention can achieve the following effects: The present invention provides a method for improving the production capacity of LPCVD quartz components. Compared with the prior art, the method has the advantages of compact structure, good operation stability and significant production capacity improvement. The problem that frequent cleaning of existing quartz components affects production capacity is solved. By improving the performance of quartz components, the upper limit of equipment loading is extended; at the same time, the cleaning technology process is improved to shorten the cleaning cycle each time, thereby improving the equipment production capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] Figure 1 It is a structural schematic diagram of the present invention.

[0019] In the figure: air supply pipe 1, pipe plug cover 2, heating tube 3, reaction furnace 4, quartz tube 5, silicon wafer 6, quartz boat 7, pressure gauge 8, exhaust pipe 9, energy storage tank 10, pneumatic ball valve 11, circulation pump 12, circulation pipe 13, filter 14, thermostat 15, air supply pipe 16, three-way valve 17, air supply pump 18, gas controller 19. DETAILED DESCRIPTION

[0020] The technical solution of the invention is further specifically described below through embodiments and in conjunction with the accompanying drawings.

[0021] Example: Figure 1 As shown, a method for improving the production capacity of LPCVD quartz components, the LPCVD quartz components modification includes a reaction furnace 4, a quartz tube 5 is arranged in the reaction furnace 4, a heating tube 3 is arranged between the quartz tube 5 and the reaction furnace 4, 30 silicon wafers 6 are arranged in the quartz tube 5, a quartz boat 7 is arranged between the lower end of the silicon wafer 6 and the quartz tube 5, an air supply pipe 1 connected to the quartz tube 5 is arranged at the front end of the quartz tube 5, a pipe plug cover 2 is arranged between the air supply pipe 1 and the quartz tube 5, an exhaust pipe 9 extending out of the reaction furnace 4 is arranged at the rear end of the quartz tube 5, a pneumatic ball valve 11 is arranged on the exhaust pipe 9, and an energy storage tank 10 is arranged between the exhaust pipe 9 and the pneumatic ball valve 11, and the energy storage tank 10 is used to prevent the gas pressure value in the quartz tube 5 from fluctuating unstably. A circulation pump 12 is provided at the rear end of the exhaust pipe 9, a circulation pipe 13 is provided between the circulation pump 12 and the air supply pipe 1, a three-way valve 17 is provided between the circulation pipe 13 and the air supply pipe 1, an air supply pipe 16 connected to the air supply pipe 1 is provided on the three-way valve 17, and a filter 14 is provided on the circulation pipe 13. An air supply pump 18 is provided between the air supply pipe 1 and the three-way valve 17, and a gas controller 19 is provided between the air supply pump 18 and the three-way valve 17. The gas supply amount of the quartz tube 5 is controlled by controlling the air supply pump 18 through the gas controller 19.

[0022] The wall thickness of quartz tube 5 increased from 2±0.3mm to 3.9±0.3mm; from the original daily production capacity of about 250 pieces, the consumption load was 24000A, the allowable load was 80000A, and cleaning was required every 3 days; after the wall thickness was increased, the upper limit of the load was 250000A, and the daily production of 250 pieces remained unchanged, the cleaning was increased from once every 3 days to once every 10 days, and the cleaning times per month were reduced from 10 times to three times per month, and the consumption of chemical cleaning was reduced by 70%.

[0023] The steps are as follows: The first step: placing the silicon wafer 6 on the quartz boat 7 and sending it into the quartz tube 5.

[0024] Step 2: The pneumatic ball valve 11 is in a closed state, the pipe plug cover 2 is inserted into the quartz tube 5, and the gas is transported into the quartz tube 5 through the gas supply pipe 16 and the gas delivery pipe 1.

[0025] Step 3: When the gas in the quartz tube 5 is saturated and pressurized, the pneumatic ball valve 11 and the circulation pump 12 are opened, so that the gas in the quartz tube 5 passes through the filter 14 and is replenished to the gas supply pipe 16, and at the same time, the heating tube 3 is heated to perform the LPCVD process on the silicon wafer 6. The reaction furnace 4 is provided with a temperature controller 15 connected to the heating tube 3 phase circuit, and the temperature required by the quartz tube 5 is monitored and controlled in real time through the temperature controller 15.

[0026] Step 4: After the LPCVD process is completed, the gas supply from the gas supply pipe 16 and the circulation pipe 13 is stopped. At this time, the quartz tube 5 is recovered after passing through the filter 14 by opening the pneumatic ball valve 11 and the circulation pump 12.

[0027] Pressure gauges 8 are provided on the pipe plug cover 2 and the exhaust pipe 9. When the pressure value of the pressure gauge 8 on the pipe plug cover 2 decreases, the gas supply of the air supply pump 18 to the quartz tube 5 is increased through the gas controller 19; when the pressure value of the pressure gauge 8 on the exhaust pipe 9 is too large, the gas supply of the air supply pump 18 to the quartz tube 5 is reduced through the gas controller 19, and the pneumatic ball valve 11 and the circulation pump 12 are opened at the same time.

[0028] When the load in the quartz tube 5 approaches the upper limit, the pipe plug cover 2 is not installed, and the pneumatic ball valve 11 and the circulation pump 12 are opened to backwash the quartz tube 5.

[0029] In summary, the method for improving the production capacity of LPCVD quartz components has the advantages of compact structure, good operation stability and significant production capacity improvement. It solves the problem that frequent cleaning of existing quartz components affects production capacity. By improving the performance of quartz components, the upper limit of equipment loading is extended; at the same time, improved cleaning technology and process are adopted to shorten the cycle of each cleaning, thereby improving equipment production capacity.

[0030] The above description is only a specific embodiment of the present invention, but the structural features of the present invention are not limited thereto. Any changes or modifications made by any technician in the field of the present invention are included in the patent scope of the present invention.

Claims

1. A method for improving the production capacity of LPCVD quartz components, characterized in that: The LPCVD quartz component modification comprises a reaction furnace (4), a quartz tube (5) is arranged in the reaction furnace (4), a heating tube (3) is arranged between the quartz tube (5) and the reaction furnace (4), a plurality of silicon wafers (6) are arranged in the quartz tube (5), a quartz boat (7) is arranged between the lower end of the silicon wafer (6) and the quartz tube (5), a gas supply pipe (1) connected to the quartz tube (5) is arranged at the front end of the quartz tube (5), a pipe plug cover (2) is arranged between the gas supply pipe (1) and the quartz tube (5), an exhaust pipe (9) extending out of the reaction furnace (4) is arranged at the rear end of the quartz tube (5), and a pneumatic ball valve (11) is arranged on the exhaust pipe (9); A circulation pump (12) is provided at the rear end of the exhaust pipe (9); a circulation pipe (13) is provided between the circulation pump (12) and the air supply pipe (1); a three-way valve (17) is provided between the circulation pipe (13) and the air supply pipe (1); an air supply pipe (16) connected to the air supply pipe (1) is provided on the three-way valve (17); and a filter (14) is provided on the circulation pipe (13); The method of increasing production capacity includes the following steps: Step 1: placing the silicon wafer (6) on a quartz boat (7) and placing it into a quartz tube (5); Step 2: The pneumatic ball valve (11) is in a closed state, the pipe plug cover (2) is inserted into the quartz tube (5), and the gas is transported into the quartz tube (5) through the gas supply pipe (16) and the gas delivery pipe (1); Step 3: When the gas in the quartz tube (5) is saturated and pressurized, the pneumatic ball valve (11) and the circulation pump (12) are opened, so that the gas in the quartz tube (5) passes through the filter (14) and is replenished to the gas supply pipe (16), and at the same time, the heating tube (3) is heated to perform the LPCVD process on the silicon wafer (6); Step 4: After the LPCVD process is completed, the gas supply from the gas supply pipe (16) and the circulation pipe (13) is stopped. At this time, the quartz tube (5) is recycled after passing through the filter (14) by opening the pneumatic ball valve (11) and the circulation pump (12).

2. The method for improving the production capacity of LPCVD quartz components according to claim 1, characterized in that: The wall thickness of the quartz tube (5) is increased from 2±0.3 mm to 3.9±0.3 mm; from the original daily production capacity of about 250 pieces, the consumption load is 24000A, the allowable load is 80000A, and cleaning is required every 3 days; after the wall thickness is increased, the upper limit of the load is 250000A, and the daily production of 250 pieces remains unchanged, the cleaning is increased from once every 3 days to once every 10 days, and the cleaning frequency is reduced from 10 times a month to three times a month, and the consumption of chemical cleaning is reduced by 70%.

3. The method for improving the production capacity of LPCVD quartz components according to claim 2, characterized in that: When the load in the quartz tube (5) approaches the upper limit, the pipe plug cover (2) is not installed, and the quartz tube (5) is backwashed by opening the pneumatic ball valve (11) and the circulation pump (12).

4. The method for improving the production capacity of LPCVD quartz components according to claim 1, characterized in that: An air supply pump (18) is provided between the air supply pipe (1) and the three-way valve (17), and a gas controller (19) is provided between the air supply pump (18) and the three-way valve (17); the air supply pump (18) is controlled by the gas controller (19) to control the air supply amount to the quartz tube (5).

5. The method for improving the production capacity of LPCVD quartz components according to claim 4, characterized in that: The pipe plug cover (2) and the exhaust pipe (9) are both provided with a pressure gauge (8); when the pressure value of the pressure gauge (8) on the pipe plug cover (2) decreases, the gas supply of the gas supply pump (18) to the quartz tube (5) is increased through the gas controller (19); when the pressure value of the pressure gauge (8) on the exhaust pipe (9) is too large, the gas supply of the gas supply pump (18) to the quartz tube (5) is reduced through the gas controller (19), and the pneumatic ball valve (11) and the circulation pump (12) are opened at the same time.

6. The method for improving the production capacity of LPCVD quartz components according to claim 1, characterized in that: An energy storage tank (10) is provided between the exhaust pipe (9) and the pneumatic ball valve (11), and the energy storage tank (10) is used to prevent the gas pressure value in the quartz tube (5) from fluctuating unstably.

7. The method for improving the production capacity of LPCVD quartz components according to claim 1, characterized in that: The reaction furnace (4) is provided with a temperature controller (15) which is in electrical communication with the heating tube (3). The temperature controller (15) is used to monitor and control the required temperature of the quartz tube (5) in real time.

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