Wafer electroplating equipment

Abstract

The wafer electroplating equipment comprises an equipment main body, an electroplating box body is arranged in the equipment main body, a pre-cleaning tank, an electroplating tank and a QDR tank are arranged in the electroplating box body, the pre-cleaning tank is located on one side of the electroplating tank, the QDR tank is located on the other side of the electroplating tank, a drying box is arranged on the front portion of the upper end of the QDR tank, and the drying box is arranged on the front portion of the upper end of the QDR tank. And an electromagnetic valve box is installed at the rear end of the electroplating box body, and air draft adjusting plates are installed at the positions, located in the electroplating tank and the QDR tank, of the interior of the electroplating box body. According to the wafer electroplating equipment disclosed by the invention, DIW deionized water is uniformly sprayed out from the nozzle to fully wet a wafer, then the wafer is placed in the electroplating bath, the electroplating bath adopts a platinum titanium mesh as an anode, power line distribution in the electroplating process is improved, the uniformity of a plating layer is further improved, and the wafer electroplating clamp adopts a latest compression structure, so that the wafer electroplating equipment has the advantages that the production cost is reduced, and the production efficiency is improved. Therefore, the air tightness of the wafer electroplating clamp is better, and the liquid leakage phenomenon of the wafer electroplating clamp in the prior art is solved.

Description

Technical Field

[0001] The present invention relates to the technical field of wafer electroplating processing, and in particular to a wafer electroplating device. Background Art

[0002] Wafer electroplating equipment is a supporting equipment for wafer electroplating processing. Wafer refers to the silicon chip used to make silicon semiconductor circuits. The surface of the wafer is processed by electroplating. With the continuous development of science and technology, people have higher and higher requirements for the manufacturing process of wafer electroplating equipment.

[0003] The existing wafer electroplating equipment has certain drawbacks when in use. The electroplating effect of the existing wafer electroplating machine is not ideal, and mass production is not possible. The effect is not uniform enough. The cleaning and pretreatment effects of the wafer surface are too poor, and the wafer surface cannot be guaranteed to be clean and free of impurities. The power lines of the electroplating tank are not uniform enough, and the air tightness of the wafer electroplating fixture for clamping the wafer is relatively poor. The wafer electroplating effect is not good enough, which brings certain adverse effects to people's use process. For this reason, we propose a wafer electroplating equipment. Summary of the invention

[0004] Technical problem solved: In view of the shortcomings of the prior art, the present invention provides a wafer electroplating equipment, which evenly sprays DIW deionized water from a nozzle to fully wet the wafer, and then places it in an electroplating tank. The electroplating tank uses a platinum titanium mesh as an anode to improve the distribution of electric lines during the electroplating process and further improve the uniformity of the coating. The wafer electroplating fixture uses the latest compression structure to make the wafer electroplating fixture more airtight, which solves the leakage phenomenon of the previous wafer electroplating fixture and can effectively solve the problems in the background technology.

[0005] Technical solution: To achieve the above-mentioned purpose, the technical solution adopted by the present invention is: a wafer electroplating equipment, including an equipment main body, an electroplating box is arranged inside the equipment main body, and a pre-cleaning tank, an electroplating tank and a QDR tank are arranged inside the electroplating box, the pre-cleaning tank is located on one side of the electroplating tank, and the QDR tank is located on the other side of the electroplating tank, a drying box is arranged at the front of the upper end of the QDR tank, a solenoid valve box is installed at the rear end of the electroplating box, an exhaust adjustment plate is installed at the position of the electroplating tank and the QDR tank inside the electroplating box, a left and right sliding door is movably arranged at the front end of the electroplating box, an air valve is installed on the top of the equipment main body, a debugging socket, a three-color lamp, a control panel and a keyboard box are arranged at the front end of the upper part of the equipment main body, a maintenance door is arranged at the front end of the lower part of the equipment main body, and a power supply and electrical area door is arranged on the side of the equipment main body.

[0006] As a preferred technical solution of the present application, the interior of the electroplating tank is provided with an inner tank back plate, a wafer electroplating fixture, a first guide rail movable rod, a liquid inlet box, a titanium mesh, a partition and a first liquid inlet pipe. The partition is arranged on the wafer electroplating fixture, the titanium mesh is installed on the first guide rail movable rod, the liquid inlet box is located on the inner side plate of the electroplating tank, and the first liquid inlet pipe is located at the bottom of the electroplating tank.

[0007] As a preferred technical solution of the present application, a second guide rail movable rod, a spray plate and a second liquid inlet pipe are arranged inside the pre-cleaning tank. The spray plate is on the second guide rail movable rod, the second liquid inlet pipe is at the bottom of the pre-cleaning tank, and the second guide rail movable rod drives the spray plate to swing.

[0008] As a preferred technical solution of the present application, the wafer electroplating fixture is provided with a fixture body, a pressure ring, a wafer assembly, a pressure cover, a conductive ring and a sealing gasket. The conductive ring is located at the middle rear end of the fixture body, the sealing gasket is located at the rear end of the conductive ring, the pressure ring is located at the middle front end of the fixture body, the wafer assembly is located between the pressure cover and the pressure ring, the sealing gasket is placed at the bottom of the fixture body, the conductive ring is pressed on, and it is tightened by the pressure ring, and the outermost side is sealed by the pressure cover.

[0009] As a preferred technical solution of the present application, a plurality of drying slots are provided inside the drying box, a heating plate is positioned on the side of the drying slot, a support frame is positioned inside the heating plate, an exhaust fan is installed at the bottom of the drying box below the drying slot, and an exhaust pipe is installed on the exhaust fan.

[0010] As a preferred technical solution of the present application, after the wafer is pre-cleaned in the pre-cleaning tank, it is placed in the electroplating tank, and finally the residual electroplating liquid is cleaned through the QDR tank. In this process, the exhaust adjustment plate draws away the water vapor in the flushing process through the air valve.

[0011] As a preferred technical solution of the present application, the spray plate in the pre-cleaning tank swings back and forth through the second guide rail movable rod to fully clean the wafer on the wafer electroplating fixture, and in this process, the solenoid valve box is constantly filled with liquid and overflows on three sides.

[0012] As a preferred technical solution of the present application, a layer of coating is deposited on the electroplating surface of the wafer in the electroplating tank through anodic oxidation and cathode reduction, wherein the anode is made of titanium mesh, the anode and the cathode are separated by the partition, and a homogenizing plate is hung on the first guide rail movable rod between the partition and the cathode to swing back and forth, and the first liquid inlet pipe continuously fills with liquid during the electroplating process, and overflows on three sides.

[0013] Beneficial effects: Compared with the prior art, the present invention provides a wafer electroplating equipment, which has the following beneficial effects: the wafer electroplating equipment evenly sprays DIW deionized water from the nozzle to fully wet the wafer, and then places it in the electroplating tank. The electroplating tank uses a platinum titanium mesh as an anode to improve the distribution of electric lines during the electroplating process and further improve the uniformity of the coating. The wafer electroplating fixture uses the latest compression structure to make the wafer electroplating fixture more airtight and solve the previous leakage phenomenon of the wafer electroplating fixture. The present application is easy to operate and easy to install, and has better cleaning and electroplating effects and a higher finished product yield. The entire wafer electroplating equipment has a simple structure and is easy to operate, and the effect of use is better than that of the traditional method. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 The figure is a schematic diagram of the overall structure of a wafer electroplating device according to the present invention.

[0015] Figure 2 It is a structural schematic diagram of a side view of a wafer electroplating device of the present invention.

[0016] Figure 3 It is a structural schematic diagram of a top view of a wafer electroplating device of the present invention.

[0017] Figure 4 The present invention is a schematic diagram of the structure of an electroplating tank in a wafer electroplating device.

[0018] Figure 5 The present invention is a schematic diagram of the structure of a pre-cleaning tank in a wafer electroplating device.

[0019] Figure 6 The present invention is a schematic structural diagram of a wafer electroplating fixture in a wafer electroplating device.

[0020] Figure 7 The present invention is a schematic diagram of the structure of a drying box in a wafer electroplating device.

[0021] In the figure: 1. Maintenance door; 2. Air exhaust adjustment plate; 3. Three-color light; 4. Air valve; 5. Left and right sliding doors; 6. Debug socket; 7. Control panel; 8. Keyboard box; 9. Electrical area door; 10. Power supply; 11. QDR tank; 12. Plating tank; 13. Pre-cleaning tank; 14. Solenoid valve box; 15. Inner tank back plate; 16. Wafer plating fixture; 17. First guide rail movable rod; 18. Liquid inlet box; 19. Titanium mesh; 20. Partition; 21. First liquid inlet pipe; 22. Second guide rail movable rod; 23. Spray plate; 24. Second liquid inlet pipe; 25. Sealing gasket; 26. Conductive ring; 27. Fixture body; 28. Pressing ring; 29. ​​Wafer assembly; 30. Pressure cover; 31. Equipment body; 32. Drying box; 33. Exhaust pipe; 34. Exhaust fan; 35. Heating plate; 36. Drying tank; 37. Support frame; 38. Electroplating box. DETAILED DESCRIPTION

[0022] The technical scheme of the present invention will be clearly and completely described below in conjunction with the accompanying drawings and specific embodiments, but it will be understood by those skilled in the art that the following described embodiments are part of embodiments of the present invention, rather than all embodiments, and are only used to illustrate the present invention, and should not be considered as limiting the scope of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by those of ordinary skill in the art without making creative work are within the scope of protection of the present invention. If specific conditions are not specified in the embodiments, they are carried out according to normal conditions or conditions recommended by the manufacturer. If the manufacturer is not specified in the reagents or instruments used, they are all conventional products that can be purchased commercially.

[0023] In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicating the orientation or positional relationship, are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as limiting the present invention. In addition, the terms "first", "second", and "third" are used for descriptive purposes only, and cannot be understood as indicating or implying relative importance.

[0024] In the description of the present invention, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be the internal communication of two components. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0025] like Figure 1-7As shown, a wafer electroplating device includes an equipment body 31, an electroplating box 38 is arranged inside the equipment body 31, a pre-cleaning tank 13, an electroplating tank 12 and a QDR tank 11 are arranged inside the electroplating box 38, the pre-cleaning tank 13 is located on one side of the electroplating tank 12, the QDR tank 11 is located on the other side of the electroplating tank 12, a drying box 32 is arranged at the front of the upper end of the QDR tank 11, a solenoid valve box 14 is installed at the rear end of the electroplating box 38, an exhaust adjustment plate 2 is installed at the position of the electroplating tank 12 and the QDR tank 11 inside the electroplating box 38, a left and right sliding door 5 is movably arranged at the front end of the electroplating box 38, and the equipment body 31 is provided with a plurality of electroplating boxes. A wind valve 4 is installed on the top, a debugging socket 6, a three-color lamp 3, a control panel 7 and a keyboard box 8 are arranged at the front end of the upper part of the equipment body 31, a maintenance door 1 is arranged at the front end of the lower part of the equipment body 31, and a power supply 10 and an electrical area door 9 are arranged on the side of the equipment body 31. DIW deionized water is sprayed evenly from the nozzle to fully wet the wafer, and then placed in the electroplating tank. The electroplating tank uses a platinum titanium mesh as an anode to improve the distribution of power lines during the electroplating process and further improve the uniformity of the coating. The wafer electroplating fixture uses the latest compression structure to make the wafer electroplating fixture more airtight, solving the previous leakage problem of the wafer electroplating fixture.

[0026] Furthermore, the interior of the electroplating tank 12 is provided with an inner tank back plate 15, a wafer electroplating fixture 16, a first guide rail movable rod 17, a liquid inlet box 18, a titanium mesh 19, a partition 20 and a first liquid inlet pipe 21. The partition 20 is arranged on the wafer electroplating fixture 16, the titanium mesh 19 is installed on the first guide rail movable rod 17, the liquid inlet box 18 is located on the inner side plate of the electroplating tank 12, and the first liquid inlet pipe 21 is located at the bottom of the electroplating tank 12.

[0027] Furthermore, a second guide rail movable rod 22, a spray plate 23 and a second liquid inlet pipe 24 are provided inside the pre-cleaning tank 13. The spray plate 23 is on the second guide rail movable rod 22. The second liquid inlet pipe 24 is at the bottom of the pre-cleaning tank 13. The second guide rail movable rod 22 drives the spray plate 23 to swing.

[0028] Furthermore, the wafer electroplating fixture 16 is provided with a fixture body 27, a pressure ring 28, a wafer assembly 29, a pressure cover 30, a conductive ring 26 and a sealing gasket 25. The conductive ring 26 is located at the middle rear end of the fixture body 27, the sealing gasket 25 is located at the rear end of the conductive ring 26, the pressure ring 28 is located at the middle front end of the fixture body 27, the wafer assembly 29 is located between the pressure cover 30 and the pressure ring 28, the sealing gasket 25 is placed at the bottom of the fixture body 27, the conductive ring 26 is pressed on, and it is pressed by the pressure ring 28, and the outermost is sealed by the pressure cover 30.

[0029] Furthermore, a plurality of drying slots 36 are provided inside the drying box 32, a heating plate 35 is positioned and installed on the side of the drying slots 36, a support frame 37 is positioned inside the heating plate 35, and an exhaust fan 34 is installed at the bottom of the drying box 32 below the drying slots 36, and an exhaust pipe 33 is installed on the exhaust fan 34.

[0030] Furthermore, after the wafer is pre-cleaned in the pre-cleaning tank 13, it is placed in the electroplating tank 12 and finally cleaned of the residual electroplating solution in the QDR tank 11. In this process, the exhaust adjustment plate 2 extracts the water vapor in the flushing process through the air valve 4.

[0031] Furthermore, the spray plate 23 in the pre-cleaning tank 13 swings back and forth through the second guide rail movable rod 22, so that the wafer on the wafer electroplating fixture 16 is fully cleaned, and in this process, the solenoid valve box 14 is continuously filled with liquid and overflows on three sides.

[0032] Furthermore, a layer of coating is deposited on the electroplating surface of the wafer in the electroplating tank 12 through anodic oxidation and cathode reduction, wherein the anode is a titanium mesh 19, the anode and the cathode are separated by a partition 20, and a homogenizing plate is hung between the partition 20 and the cathode on the first guide rail movable rod 17 to swing back and forth, and the first liquid inlet pipe 21 continuously fills with liquid during the electroplating process, and overflows on three sides.

[0033] The wafer electroplating equipment includes a pre-cleaning tank, an electroplating tank, and a wafer electroplating fixture placed in the electroplating tank. The wafer electroplating equipment includes a maintenance door, an exhaust adjustment plate during pre-cleaning, which is extracted through an air valve, and a left and right sliding door is used to prevent water vapor from escaping. It is equipped with a control panel and a keyboard box for easy control. The right side is the electrical area door and power supply. The pre-cleaning tank is bolted to the movable rod by the spray plate for back and forth movement. The liquid inlet pipe at the bottom of the pre-cleaning tank continuously fills with liquid during the pre-cleaning process, so that the whole process overflows continuously and the cleaning effect is better. The electroplating tank is placed in the electroplating tank by the wafer electroplating fixture, the anode platinum titanium mesh is screwed to the movable rod of the guide rail, separated by a partition in the middle, and the liquid inlet pipe fills the bottom of the electroplating tank. The wafer electroplating fixture is tightly attached to the fixture body by a sealing gasket, the conductive ring is pressed on the sealing gasket, the pressure ring is bolted to the fixture body, and finally locked to the fixture body by a pressure cover.

[0034] Working principle: The present invention comprises a maintenance door 1, an exhaust adjustment plate 2, a three-color lamp 3, an air valve 4, a left and right sliding door 5, a debugging socket 6, a control panel 7, a keyboard box 8, an electrical area door 9, a power supply 10, a QDR tank 11, a plating tank 12, a pre-cleaning tank 13, a solenoid valve box 14, an inner tank back plate 15, a wafer plating fixture 16, a first guide rail movable rod 17, a liquid inlet box 18, a titanium mesh 19, a partition 20, a first liquid inlet pipe 21, a second guide rail movable rod 22, a spray plate 23, a second liquid inlet pipe 24, a sealing pad 25, a conductive ring 26, a fixture body 27, a pressure Ring 28, wafer assembly 29, pressure cover 30, equipment body 31, drying box 32, exhaust pipe 33, exhaust fan 34, heating plate 35, drying tank 36, support frame 37 and electroplating box 38, DIW deionized water is evenly sprayed from the nozzle to fully wet the wafer, and then placed in the electroplating tank. The electroplating tank uses platinum titanium mesh as the anode to improve the distribution of power lines during the electroplating process and further improve the uniformity of the coating. The wafer electroplating fixture uses the latest compression structure to make the wafer electroplating fixture more airtight and solve the previous leakage problem of the wafer electroplating fixture.

[0035] The wafer electroplating equipment includes left and right sliding doors, with a keyboard box, control panel, and debugging switch on the left. After pre-cleaning in the pre-cleaning tank, it is placed in the electroplating tank, and finally the residual electroplating liquid is cleaned through the QDR tank. In this process, the exhaust adjustment plate removes the water vapor in the rinsing process through the air valve. The spray plate in the pre-cleaning tank swings back and forth through the movable rod to fully clean the wafer on the wafer electroplating fixture. In this process, the bottom liquid inlet pipe keeps inletting liquid and overflows on three sides to achieve better rinsing effect. In the electroplating tank, a layer of plating is deposited on the electroplating surface of the wafer through the principle of anodic oxidation and cathode reduction. The anode uses a platinum titanium mesh, and the anode and the cathode are separated by a partition. The partition and the cathode are hung on the movable rod with a homogenizing plate to swing back and forth. The bottom liquid inlet pipe keeps inletting liquid during the electroplating process and overflows on three sides. The wafer electroplating fixture adopts a PPN body, a sealing gasket is placed at the bottom, a conductive ring is pressed on it, and it is pressed by a pressure ring, and the outermost is sealed by a pressure cover.

[0036] It should be noted that, in this article, relational terms such as first and second (number one, number two), etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the sentence "including one..." do not exclude the existence of other identical elements in the process, method, article or device including the elements.

[0037] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It should be understood by those skilled in the art that the present invention is not limited by the above embodiments, and the above embodiments and descriptions are only for explaining the principles of the present invention. Without departing from the spirit and scope of the present invention, the present invention may have various changes and improvements, and these changes and improvements all fall within the scope of the present invention to be protected.

Claims

1. A wafer electroplating device, comprising a device body (31), characterized in that: The equipment body (31) is provided with an electroplating box (38) inside, and the electroplating box (38) is provided with a pre-cleaning tank (13), an electroplating tank (12) and a QDR tank (11) inside, the pre-cleaning tank (13) is located on one side of the electroplating tank (12), the QDR tank (11) is located on the other side of the electroplating tank (12), a drying box (32) is provided at the front of the upper end of the QDR tank (11), a solenoid valve box (14) is installed at the rear end of the electroplating box (38), and the interior of the electroplating box (38) is located at the electroplating tank. An exhaust adjustment plate (2) is installed at the position of the QDR slot (11), a left and right sliding door (5) is movably provided at the front end of the electroplating box (38), a wind valve (4) is installed on the top of the equipment body (31), a debugging socket (6), a three-color light (3), a control panel (7) and a keyboard box (8) are arranged at the front end of the upper part of the equipment body (31), a maintenance door (1) is arranged at the front end of the lower part of the equipment body (31), and a power supply (10) and an electrical area door (9) are arranged on the side of the equipment body (31).

2. The wafer electroplating equipment according to claim 1, characterized in that: The interior of the electroplating tank (12) is provided with an inner tank back plate (15), a wafer electroplating fixture (16), a first guide rail movable rod (17), a liquid inlet box (18), a titanium mesh (19), a partition plate (20) and a first liquid inlet pipe (21); the partition plate (20) is arranged on the wafer electroplating fixture (16); the titanium mesh (19) is installed on the first guide rail movable rod (17); the liquid inlet box (18) is located on the inner side plate of the electroplating tank (12); and the first liquid inlet pipe (21) is located at the bottom of the electroplating tank (12).

3. The wafer electroplating equipment according to claim 1, characterized in that: A second guide rail movable rod (22), a spray plate (23) and a second liquid inlet pipe (24) are arranged inside the pre-cleaning tank (13); the spray plate (23) is on the second guide rail movable rod (22); the second liquid inlet pipe (24) is at the bottom of the pre-cleaning tank (13); and the second guide rail movable rod (22) drives the spray plate (23) to swing.

4. The wafer electroplating equipment according to claim 2, characterized in that: The wafer electroplating fixture (16) is provided with a fixture body (27), a pressure ring (28), a wafer assembly (29), a pressure cover (30), a conductive ring (26) and a sealing gasket (25); the conductive ring (26) is located at the middle rear end of the fixture body (27); the sealing gasket (25) is located at the rear end of the conductive ring (26); the pressure ring (28) is located at the middle front end of the fixture body (27); the wafer assembly (29) is located between the pressure cover (30) and the pressure ring (28); the sealing gasket (25) is placed at the bottom of the fixture body (27), the conductive ring (26) is pressed on top, and is pressed by the pressure ring (28); the outermost part is sealed by the pressure cover (30).

5. The wafer electroplating equipment according to claim 1, characterized in that: The drying box (32) has a plurality of drying slots (36) disposed inside, a heating plate (35) is positioned and installed on the side of the drying slots (36), a support frame (37) is positioned and installed inside the heating plate (35), an exhaust fan (34) is installed at a position below the drying slots (36) at the bottom of the drying box (32), and an exhaust pipe (33) is installed on the exhaust fan (34).

6. The wafer electroplating equipment according to claim 1, characterized in that: After the wafer is pre-cleaned in the pre-cleaning tank (13), it is placed in the electroplating tank (12) and finally cleaned of the residual electroplating liquid through the QDR tank (11). During this process, the exhaust adjustment plate (2) removes the water vapor in the flushing process through the air valve (4).

7. The wafer electroplating equipment according to claim 3, characterized in that: The spray plate (23) in the pre-cleaning tank (13) swings back and forth via the second guide rail movable rod (22) so that the wafer on the wafer electroplating fixture (16) is fully cleaned, and during this process, the solenoid valve box (14) is continuously filled with liquid and overflows on three sides.

8. The wafer electroplating equipment according to claim 2, characterized in that: In the electroplating tank (12), a layer of plating is deposited on the electroplating surface of the wafer by anodic oxidation and cathode reduction, wherein the anode is a titanium mesh (19), the anode and the cathode are separated by the partition (20), and a homogenizing plate is hung on the first guide rail movable rod (17) between the partition (20) and the cathode to swing back and forth, and the first liquid inlet pipe (21) continuously fills with liquid during the electroplating process, and overflows on three sides.

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