Single crystal furnace temperature correction method and single crystal furnace

Abstract

The embodiment of the invention relates to the technical field of single crystal manufacturing, and provides a single crystal furnace temperature correction method and a single crystal furnace, and the method comprises the following steps: taking the seeding pulling speed, the equal diameter length and the seeding power during pulling of an Mth single crystal as a first reference value, a second reference value and reference power in sequence; s continuous positive reference intervals and T continuous negative reference intervals are set based on the maximum value and the minimum value in the first preset range; if the first reference value falls into the Sth positive reference interval and the second reference value is smaller than or equal to the minimum value of the second preset value, setting the positive correction and the seeding power when the (M + 1) th single crystal is drawn as the sum of the reference power and the S-time positive correction; and if the first reference value falls into the Tth negative reference interval and the second reference value is smaller than or equal to the minimum value of the second preset value, setting the negative correction and the seeding power during drawing of the (M + 1) th single crystal as the difference between the reference power and the T-time negative correction, and at least facilitating automatic correction of the seeding power so as to improve the shouldering survival rate.

Description

Technical Field

[0001] The disclosed embodiments relate to the technical field of single crystal manufacturing, and in particular to a temperature correction method for a single crystal furnace and a single crystal furnace. Background Art

[0002] At present, with the gradual depletion of fossil energy, photovoltaic cells are increasingly used as a new energy alternative. Photovoltaic cells are devices that convert sunlight into electrical energy. Photovoltaic cells use the principle of photovoltaics to generate carriers, and then use electrodes to lead out the carriers, which is conducive to the effective use of electrical energy. As a basic material for photovoltaic power generation, single-crystal silicon wafers have a wide market demand. The preparation process of single-crystal silicon materials is mainly based on the Czochralski process (CZ), which uses the Czochralski process to refine polycrystalline silicon raw materials into single-crystal silicon. The process of generating rod-shaped single-crystal silicon crystals in the Czochralski single crystal process is divided into the steps of loading, melting, adding, temperature adjustment, seeding, shoulder release, shoulder rotation, equal diameter, and finishing to obtain single-crystal silicon rods.

[0003] However, in order to maintain the stability of the melt and temperature field so that the crystals will grow at the set diameter, the operator needs to pay attention to and adjust many parameters related to the single crystal furnace. This requires high consistency in the operator's operations, and the shoulder release survival rate of the pulled single crystal remains unstable. Summary of the invention

[0004] The embodiments of the present disclosure provide a single crystal furnace temperature correction method and a single crystal furnace, which are at least conducive to automatically correcting the seeding power based on the relevant parameters when pulling the previous single crystal, so as to improve the shoulder release survival rate of the pulled single crystal.

[0005] According to some embodiments of the present disclosure, on the one hand, an embodiment of the present disclosure provides a single crystal furnace temperature correction method, including: obtaining the seeding pulling speed when pulling the Mth single crystal as a first reference value, the equal diameter length when pulling the Mth single crystal as a second reference value, and the seeding power when pulling the Mth single crystal as a reference power; if the first reference value is within a first preset range, and the second reference value is greater than the second preset value, setting the seeding power when pulling the (M+1)th single crystal as the reference power; setting S consecutive positive reference intervals based on the maximum value in the first preset range, the minimum value of the Sth positive reference interval is the maximum value of the (S-1)th positive reference interval, and the maximum value of the Sth positive reference interval is the minimum value of the (S+1)th positive reference interval; setting T consecutive negative reference intervals based on the minimum value in the first preset range, the minimum value of the Tth negative reference interval is The value is the maximum value of the (T-1)th negative reference interval, and the maximum value of the Tth negative reference interval is the minimum value of the (T+1)th negative reference interval; if the first reference value is greater than the minimum value of the Sth positive reference interval and less than or equal to the maximum value of the Sth positive reference interval, and the second reference value is less than or equal to the second preset value, the positive correction amount is set, and the seeding power when pulling the (M+1)th single crystal is set to be the sum of the reference power and S times the positive correction amount; if the first reference value is greater than or equal to the minimum value of the Tth negative reference interval and less than the maximum value of the Tth negative reference interval, and the second reference value is less than or equal to the second preset value, the negative correction amount is set, and the seeding power when pulling the (M+1)th single crystal is set to be the difference between the reference power and T times the negative correction amount; M, S, and T are all positive integers greater than or equal to 1.

[0006] In some embodiments, the single crystal furnace temperature correction method also includes: obtaining the liquid surface brightness when pulling the Mth single crystal as a reference brightness; if the first reference value is greater than the minimum value of the Sth positive reference interval and less than or equal to the maximum value of the Sth positive reference interval, and the second reference value is less than or equal to a second preset value, the single crystal furnace temperature correction method also includes: setting a positive adjustment amount, and setting the liquid surface brightness when pulling the (M+1)th single crystal to be the sum of the reference brightness and S times the positive adjustment amount; if the first reference value is greater than or equal to the minimum value of the Tth negative reference interval and less than the maximum value of the Tth negative reference interval, and the second reference value is less than or equal to the second preset value, the single crystal furnace temperature correction method also includes: setting a negative adjustment amount, and setting the liquid surface brightness when pulling the (M+1)th single crystal to be the difference between the reference brightness and T times the negative adjustment amount.

[0007] In some embodiments, the single crystal furnace temperature correction method also includes: obtaining the liquid nozzle distance when pulling the Mth single crystal as a third reference value; if the third reference value is within the third preset range, the first reference value is within the first preset range, and the second reference value is greater than the second preset value, setting the seeding power when pulling the (M+1)th single crystal to the reference power; setting R consecutive positive reference intervals based on the maximum value in the third preset range, the minimum value of the Rth positive reference interval is the maximum value of the (R-1)th positive reference interval, and the maximum value of the Rth positive reference interval is the minimum value of the (R+1)th positive reference interval; setting Q consecutive negative reference intervals based on the minimum value in the third preset range, and the minimum value of the Qth negative reference interval is the (Q-1)th negative reference interval. The maximum value of the Qth negative reference interval is the minimum value of the (Q+1)th negative reference interval; if the third reference value is greater than the minimum value of the Rth positive reference interval and less than or equal to the maximum value of the Rth positive reference interval, and the first reference value is within the first preset range, the positive reference value is set, and the seeding power when pulling the (M+1)th single crystal is set to be the sum of the reference power and R times the positive reference value; if the third reference value is greater than or equal to the minimum value of the Qth negative reference interval and less than the maximum value of the Qth negative reference interval, and the first reference value is within the first preset range, the negative reference value is set, and the seeding power when pulling the (M+1)th single crystal is set to be the difference between the reference power and Q times the negative reference value; R and Q are both positive integers greater than or equal to 1.

[0008] In some embodiments, the third preset range is 30 mm to 35 mm.

[0009] In some embodiments, the difference between the maximum value and the minimum value of a single positive reference interval is a first reference difference, the maximum value and the minimum value of a single negative reference interval is a second reference difference, and the first reference difference is equal to the second reference difference; the positive reference quantity is equal to the negative reference quantity; wherein, the first reference difference and the second reference difference are both 1mm to 6mm; the positive reference quantity and the negative reference quantity are both 0.1kw to 1kw.

[0010] In some embodiments, the difference between the maximum value and the minimum value of a single positive reference interval is a first reference difference, the maximum value and the minimum value of a single negative reference interval is a second reference difference, and the first reference difference is not equal to the second reference difference; the positive reference amount and the negative reference amount are not equal; wherein, the first reference difference is 1mm~3mm, the second reference difference is 3mm~6mm, the positive reference amount is 0.1kw~0.5kw, and the negative reference amount is 0.4kw~1kw; or, the first reference difference is 3mm~6mm, the second reference difference is 1mm~3mm, the positive reference amount is 0.4kw~1kw, and the negative reference amount is 0.1kw~0.5kw.

[0011] In some embodiments, the first preset range is 250 mm / h to 320 mm / h; and / or the second preset value is 400 mm to 600 mm.

[0012] In some embodiments, the difference between the maximum value and the minimum value of a single positive reference interval is a first deviation, the maximum value and the minimum value of a single negative reference interval is a second deviation, and the first deviation is equal to the second deviation; the positive correction is equal to the negative correction; wherein, the first deviation and the second deviation are both 10 mm / h to 30 mm / h; and the positive correction and the negative correction are both 0.1 kw to 1 kw.

[0013] In some embodiments, the difference between the maximum value and the minimum value of a single positive reference interval is a first deviation, the maximum value and the minimum value of a single negative reference interval is a second deviation, and the first deviation is not equal to the second deviation; the positive correction is not equal to the negative correction; wherein, the first deviation is 10mm / h to 15mm / h, the second deviation is 15mm / h to 30mm / h, the positive correction is 0.1kw to 0.5kw, and the negative correction is 0.4kw to 1kw; or, the first deviation is 15mm / h to 30mm / h, the second deviation is 10mm / h to 15mm / h, the positive correction is 0.4kw to 1kw, and the negative correction is 0.1kw to 0.5kw.

[0014] According to some embodiments of the present disclosure, on the other hand, the embodiments of the present disclosure further provide a single crystal furnace, comprising: a heater, a crucible, a parameter detection device and a single crystal furnace temperature correction device, wherein the single crystal furnace temperature correction device is configured to implement the single crystal furnace temperature correction method as described in any one of the above items; the single crystal furnace temperature correction device is communicatively connected with the heater and the parameter detection device; the heater is configured to heat the crucible, and the seeding power is the working power of the heater; the parameter detection device is configured to at least obtain the seeding pulling speed when pulling the Mth single crystal, the equal diameter length when pulling the Mth single crystal, and the seeding power when pulling the Mth single crystal.

[0015] The technical solution provided by the embodiments of the present disclosure has at least the following advantages:

[0016] First, a first preset range is set for the seeding pulling speed, and a second preset value is set for the equal-diameter length. The seeding pulling speed when pulling the Mth single crystal is taken as the first reference value, and the equal-diameter length when pulling the Mth single crystal is taken as the second reference value. When it is determined that the seeding pulling speed and the equal-diameter length when pulling the Mth single crystal both meet the set requirements, the seeding power when pulling the (M+1)th single crystal is not additionally corrected, that is, the seeding power when pulling the (M+1)th single crystal is set as the reference power, that is, the seeding power when pulling the Mth single crystal. This is beneficial to avoiding the error when manually setting the parameters again to ensure the consistency of temperature regulation during the crystal pulling process and improve the crystal pulling efficiency.

[0017] Secondly, based on the maximum value and the minimum value in the first preset range, S consecutive positive reference intervals and T consecutive negative reference intervals are set respectively, and the positive correction amount and the negative correction amount are set respectively. When it is determined that the seeding pulling speed and the equal-diameter length when pulling the Mth single crystal do not meet the set requirements, based on the seeding pulling speed when pulling the Mth single crystal, that is, which positive reference interval or negative reference interval the first reference value falls into, the seeding power when pulling the (M+1)th single crystal is automatically corrected in combination with the set positive correction amount or negative correction amount, which is beneficial to further improve the consistency of temperature control during the crystal pulling process, so as to improve the shoulder release survival rate of the pulled single crystal. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] One or more embodiments are exemplarily illustrated by pictures in the corresponding drawings, and these exemplified descriptions do not constitute a limitation on the embodiments. Unless otherwise specified, the pictures in the drawings do not constitute a scale limitation. In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the traditional technology, the drawings required for use in the embodiments are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0019] Figure 1 A schematic flow chart of a single crystal furnace temperature correction method provided by an embodiment of the present disclosure;

[0020] Figure 2 A numerical axis schematic diagram of a first preset range, a positive reference interval, and a negative reference interval in a single crystal furnace temperature correction method provided by an embodiment of the present disclosure;

[0021] Figure 3 Another schematic diagram of a flow chart of a single crystal furnace temperature correction method provided by an embodiment of the present disclosure;

[0022] Figure 4 A schematic diagram of another process flow of a single crystal furnace temperature correction method provided in an embodiment of the present disclosure;

[0023] Figure 5 A numerical axis diagram of the third preset range, the positive reference interval and the negative reference interval in the single crystal furnace temperature correction method provided in one embodiment of the present disclosure. DETAILED DESCRIPTION

[0024] It can be seen from the background technology that the shoulder release survival rate of pulled single crystals needs to be improved.

[0025] After analysis, it was found that with the vigorous development of the single crystal industry, the quality requirements for single crystals are getting higher and higher. The process requirements of each process in the single crystal preparation process must be strictly controlled. The temperature control steps of single crystal pulling require a lot of manpower costs. Moreover, the temperature control target power and brightness during the crystal pulling operation need to be set manually. There are errors in human setting, which will also lead to continued instability in the shoulder release survival rate.

[0026] The present disclosure provides a temperature correction method for a single crystal furnace and a single crystal furnace. In the temperature correction method for the single crystal furnace, a first preset range is first set for the seeding pulling speed, and a second preset value is set for the equal-diameter length. The seeding pulling speed when pulling the Mth single crystal is used as the first reference value, and the equal-diameter length when pulling the Mth single crystal is used as the second reference value. When it is determined that the seeding pulling speed and the equal-diameter length when pulling the Mth single crystal both meet the set requirements, the seeding power when pulling the (M+1)th single crystal is not additionally corrected, that is, the seeding power when pulling the (M+1)th single crystal is set as the reference power, that is, the seeding power when pulling the Mth single crystal. This is beneficial to avoiding the error when manually setting the parameters again to ensure the consistency of temperature regulation during the crystal pulling process and improve the crystal pulling efficiency. Secondly, based on the maximum value and the minimum value in the first preset range, S consecutive positive reference intervals and T consecutive negative reference intervals are set respectively, and the positive correction amount and the negative correction amount are set respectively. When it is determined that the seeding pulling speed and the equal-diameter length when pulling the Mth single crystal do not meet the set requirements, based on the seeding pulling speed when pulling the Mth single crystal, that is, which positive reference interval or negative reference interval the first reference value falls into, the seeding power when pulling the (M+1)th single crystal is automatically corrected in combination with the set positive correction amount or negative correction amount, which is beneficial to further improve the consistency of temperature control during the crystal pulling process, so as to improve the shoulder release survival rate of the pulled single crystal.

[0027] In the description of the embodiments of the present disclosure, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present disclosure, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0028] Reference to "embodiments" herein means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present disclosure. The appearance of the phrase in various places in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described herein may be combined with other embodiments.

[0029] In the description of the embodiments of the present disclosure, the term "and / or" is only a description of the association relationship of associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists, A and B exist at the same time, and B exists. In addition, the character " / " in this article generally indicates that the associated objects before and after are in an "or" relationship.

[0030] In the description of the embodiments of the present disclosure, the term "multiple" refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple pieces" refers to more than two pieces (including two pieces).

[0031] In the description of the embodiments of the present disclosure, the orientations or positional relationships indicated by technical terms such as "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", and "circumferential" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the embodiments of the present disclosure and simplifying the description. They do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as limiting the embodiments of the present disclosure.

[0032] In the description of the embodiments of the present disclosure, unless otherwise clearly specified and limited, technical terms such as "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium, and it can be the internal connection of two elements or the interaction relationship between two elements. For those of ordinary skill in the art, the specific meanings of the above terms in the embodiments of the present disclosure can be understood according to the specific circumstances.

[0033] In the accompanying drawings corresponding to the embodiments of the present disclosure, the thickness and area of ​​the layers are magnified for better understanding and ease of description. When describing a component (such as a layer, a film, a region or a substrate) on another component or on the surface of another component, the component may be "directly" located on the surface of the other component, or a third component may be present between the two components. On the contrary, when describing a component on the surface of another component or when another component is formed or provided on the surface of a component, it means that there is no third component between the two components. In addition, when describing a component as being "substantially" formed on another component, it means that the component is not formed on the entire surface (or front surface) of the other component, nor is it formed on a partial edge of the entire surface.

[0034] In the description of the embodiments of the present disclosure, when a component "includes" another component, unless otherwise specified, other components are not excluded, and other components may be further included. In addition, when a component such as a layer, a film, a region, or a plate is referred to as being "on / located on" another component, it may be "directly on" the other component (i.e., located on the surface of the other component with no other components between them), or another component may exist in between. In addition, when a component such as a layer, a film, a region, a plate, etc. is "directly located on" another component, or when a component such as a layer, a film, a region, a plate, etc. is located on the surface of another component, it means that no other components are located in between.

[0035] The terms used in the description of the various embodiments described herein are only used to describe specific embodiments and are not intended to be limiting. As used in the description of the various embodiments described and in the appended claims, "the components" are also intended to include plural forms unless the context clearly indicates otherwise. Among them, components include components such as layers, films, regions, or plates.

[0036] The following will describe the various embodiments of the present disclosure in detail with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that in the various embodiments of the present disclosure, many technical details are provided in order to enable the reader to better understand the embodiments of the present disclosure. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the embodiments of the present disclosure can be implemented.

[0037] An embodiment of the present disclosure provides a single crystal furnace temperature correction method. The single crystal furnace temperature correction method provided by an embodiment of the present disclosure will be described in detail below with reference to the accompanying drawings.

[0038] refer to Figure 1 and Figure 2 , Figure 1 A schematic diagram of a flow chart of a single crystal furnace temperature correction method provided by an embodiment of the present disclosure, Figure 2 The figure is a schematic diagram of the first preset range, the positive reference interval and the negative reference interval in the temperature correction method of the single crystal furnace provided in one embodiment of the present disclosure. The temperature correction method of the single crystal furnace includes at least the following steps:

[0039] S1: Obtain the seeding pulling speed when pulling the Mth single crystal as the first reference value Re1, the equal diameter length when pulling the Mth single crystal as the second reference value Re2, and the seeding power when pulling the Mth single crystal as the reference power Re3.

[0040] S2: If the first reference value Re1 is within the first preset range 100, and the second reference value Re2 is greater than the minimum value of the second preset value, the seeding power when pulling the (M+1)th single crystal is set to the reference power Re3.

[0041] S3: Reference Figure 2 , S consecutive positive reference intervals 101 are set based on the maximum value in the first preset range 100.

[0042] It is worth noting that reference Figure 2 , S consecutive positive reference intervals 101 mean: the minimum value of the Sth positive reference interval 101 is the maximum value of the (S-1)th positive reference interval 101, and the maximum value of the Sth positive reference interval 101 is the minimum value of the (S+1)th positive reference interval 101.

[0043] S4 : setting T consecutive negative reference intervals 102 based on the minimum value in the first preset range 100 .

[0044] It is worth noting that reference Figure 2 , T consecutive negative reference intervals 102 mean: the minimum value of the Tth negative reference interval 102 is the maximum value of the (T-1)th negative reference interval 102, and the maximum value of the Tth negative reference interval 102 is the minimum value of the (T+1)th negative reference interval 102.

[0045] S5: If the first reference value Re1 is greater than the minimum value of the Sth positive reference interval 101 and less than or equal to the maximum value of the Sth positive reference interval 101, and the second reference value Re2 is less than or equal to the second preset value, the positive correction amount t1 is set, and the seeding power when pulling the (M+1)th single crystal is set to the sum of the reference power Re3 and S times the positive correction amount t1; if the first reference value Re1 is greater than or equal to the minimum value of the Tth negative reference interval 102 and less than the maximum value of the Tth negative reference interval 102, and the second reference value Re2 is less than or equal to the second preset value, the negative correction amount t2 is set, and the seeding power when pulling the (M+1)th single crystal is set to the difference between the reference power Re3 and T times the negative correction amount t2.

[0046] Wherein, M, S, and T are all positive integers greater than or equal to 1.

[0047] In other words, on the basis that the second reference value Re2 is less than or equal to the second preset value, that is, the equal diameter length when pulling the Mth single crystal does not meet the standard, if the first reference value Re1 is greater than the minimum value of the Sth positive reference interval 101 and less than or equal to the maximum value of the Sth positive reference interval 101, that is, the first reference value Re1 falls into the Sth positive reference interval 101, the seeding power P when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re3+S*t1; if the first reference value Re1 is greater than or equal to the minimum value of the Tth negative reference interval 102 and less than the maximum value of the Tth negative reference interval 102, that is, the first reference value Re1 falls into the Tth negative reference interval 102, the seeding power P when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re3-T*t2.

[0048] It is worth noting that in order to improve the shoulder release survival rate of pulled single crystals, in the single crystal furnace temperature correction method provided in an embodiment of the present disclosure, at least the seeding pulling speed and the equal-diameter length when pulling the Mth single crystal are used as references to correct the seeding power when pulling the (M+1)th single crystal, and the correction logic is roughly divided into the following three situations, and different correction logics are adopted based on different situations.

[0049] First, a first preset range is set for the seeding speed, a second preset value is set for the equal diameter length, the seeding speed when pulling the Mth single crystal is taken as the first reference value Re1, and the equal diameter length when pulling the Mth single crystal is taken as the second reference value Re2. Moreover, based on the maximum value and the minimum value in the first preset range 100, S consecutive positive reference intervals 101 and T consecutive negative reference intervals 102 are set, respectively, and the positive correction amount t1 and the negative correction amount t2 are set, respectively.

[0050] Case 1: If the seeding speed and the equal diameter length when pulling the Mth single crystal meet the preset requirements, that is, the first reference value Re1 is within the first preset range, and the second reference value Re2 is greater than the second preset value, the seeding power when pulling the (M+1)th single crystal is not additionally corrected, that is, the seeding power when pulling the (M+1)th single crystal is set to the reference power Re3. In other words, P (M+1) = Re3. In this way, the seeding power when pulling the Mth single crystal is conducive to avoiding the error when manually resetting the parameters to ensure the consistency of temperature adjustment during the crystal pulling process, and to improve the crystal pulling efficiency and reduce the labor intensity of operators to save manpower. It should be noted that the second reference value Re2 is greater than the second preset value, which is generally determined to be successful in seeding.

[0051] Scenario 2: On the basis that the second reference value Re2 is less than or equal to the second preset value, that is, the equal diameter length when pulling the Mth single crystal does not meet the standard, if the first reference value Re1 is greater than the minimum value of the Sth positive reference interval 101 and less than or equal to the maximum value of the Sth positive reference interval 101, that is, the first reference value Re1 falls into the Sth positive reference interval 101, the seeding power when pulling the (M+1)th single crystal is automatically corrected to be the sum of the reference power Re3 and the S times positive correction amount t1. In other words, P (M+1) =Re3+S*t1.

[0052] Scenario 3: On the basis that the second reference value Re2 is less than or equal to the second preset value, that is, the equal diameter length when pulling the Mth single crystal does not meet the standard, if the first reference value Re1 is greater than or equal to the minimum value of the Tth negative reference interval 102 and less than the maximum value of the Tth negative reference interval 102, that is, the first reference value Re1 falls into the Tth negative reference interval 102, the seeding power when pulling the (M+1)th single crystal is automatically corrected to be the difference between the reference power Re3 and the negative correction amount t2 times of T. In other words, P (M+1) =Re3-T*t2.

[0053] It can be seen that on the basis that the second reference value Re2 is less than or equal to the second preset value, that is, the equal-diameter length when pulling the Mth single crystal does not meet the standard, whether the first reference value in situation two exceeds the maximum value of the first preset range, or the first reference value in situation two is less than the minimum value of the first preset range, the induction power when pulling the (M+1)th single crystal can be automatically corrected in combination with the set positive correction amount t1 or negative correction amount t2, which is beneficial to further improve the consistency of temperature control during the crystal pulling process, so as to improve the shoulder release survival rate of the pulled single crystal.

[0054] In some embodiments, the single crystal furnace temperature correction method provided by an embodiment of the present disclosure is used to at least increase the shoulder release survival rate of the pulled single crystal by 2%.

[0055] In some embodiments, in the single crystal furnace temperature correction method provided by an embodiment of the present disclosure, a proportional, integral, and differential (PID) control program can be used to adjust the seeding power.

[0056] The following is a detailed description of each step in the single crystal furnace temperature correction method provided in one embodiment of the present disclosure.

[0057] In some embodiments, the first preset range is set to 250 mm / h to 320 mm / h in step S2. Thus, if the seeding speed when pulling the Mth single crystal in step S2, i.e., the first reference value Re1, meets the following condition: 250 mm / h ≥ Re1 ≥ 320 mm / h, then it is determined that the first reference value Re1 is within the first preset range 100, i.e., the first reference value Re1 meets the standard.

[0058] In some embodiments, the second preset value set in step S2 can be any value between 400mm and 600mm. For example, the second preset value can be 410mm, 420mm, 430mm, 440mm, 450mm, 460mm, 470mm, 480mm, 490mm, 500mm, 510mm, 520mm, 530mm, 540mm, 550mm, 560mm, 570mm, 580mm or 590mm, etc.

[0059] It is worth noting that the second preset value can be set according to actual needs based on the different diameters of the single crystals to be pulled, the different raw materials used to pull the single crystals, or the different equipment or environment for pulling the single crystals. In this way, in some cases, the second preset value is 400 mm, and the equal diameter length when pulling the Mth single crystal, that is, the second reference value Re2 is greater than 400 mm, and it can be determined that the second reference value Re2 meets the standard.

[0060] The division of the positive reference interval 101 and the negative reference interval 102, and the values ​​of the positive correction amount t1 and the negative correction amount t2 include at least the following embodiments:

[0061] In some embodiments, reference Figure 2 The difference between the maximum value and the minimum value of the single positive reference interval 101 is the first deviation, the maximum value and the minimum value of the single negative reference interval 102 is the second deviation, the first deviation is equal to the second deviation, and the positive correction amount t1 is equal to the negative correction amount t2.

[0062] It is worth noting that when the first reference value Re1 is greater than the maximum value of the first preset range 100, the degree to which the first reference value Re1 is greater than the maximum value of the first preset range 100 is divided into multiple levels, each level corresponds to a positive reference interval 101, and the first deviation amount can be regarded as a division standard for the positive reference interval 101. Then, based on the different degrees to which the first reference value Re1 is greater than the maximum value of the first preset range 100, the crystal induction power when pulling the (M+1)th single crystal is increased to different degrees, so as to improve the consistency of temperature control during the crystal pulling process, which is beneficial to improve the shoulder release survival rate of the pulled single crystal.

[0063] Similarly, when the first reference value Re1 is less than the minimum value of the first preset range 100, the degree to which the first reference value Re1 is less than the minimum value of the first preset range 100 is divided into multiple levels, each level corresponds to a negative reference interval 102, and the second deviation can be regarded as a division standard for the negative reference interval 102. Then, based on the different degrees to which the first reference value Re1 is less than the minimum value of the first preset range 100, the crystal induction power when pulling the (M+1)th single crystal is reduced to different degrees to improve the consistency of temperature control during the crystal pulling process, which is beneficial to improving the shoulder release survival rate of the pulled single crystal.

[0064] On this basis, the first deviation is designed to be equal to the second deviation, and the positive correction amount t1 is equal to the negative correction amount t2. In other words, the same division standard is used for the positive reference interval 101 and the negative reference interval 102, and the same correction amount is used to adjust the seeding power when pulling the (M+1)th single crystal, which is conducive to making the seeding temperature when pulling different single crystals change as uniformly as possible based on the uniform adjustment of the seeding power, so as to further ensure the consistency of temperature adjustment, and subsequently many problems in the crystal pulling process can be analyzed based on the uniform power change.

[0065] In some examples, the first deviation and the second deviation can both be 10 mm / h to 30 mm / h. For example, the first deviation and the second deviation can both be 12 mm / h, 13 mm / h, 15 mm / h, 16 mm / h, 18 mm / h, 20 mm / h, 22 mm / h, 23 mm / h, 25 mm / h, 26 mm / h, 28 mm / h or 29 mm / h, etc.

[0066] In some examples, the positive correction amount t1 and the negative correction amount t2 may both be 0.1 kW to 1 kW. For example, the positive correction amount t1 and the negative correction amount t2 may both be 0.2 kW, 0.3 kW, 0.4 kW, 0.5 kW, 0.6 kW, 0.7 kW, 0.8 kW or 0.9 kW.

[0067] In one example, the first preset range is 250 mm / h to 320 mm / h, the second preset value may be 500 mm, the first deviation and the second deviation are both 20 mm / h, and the positive correction t1 and the negative correction t2 are both 0.3 kw.

[0068] Thus, in step S5, on the basis that the second reference value Re2 is less than or equal to 500 mm, that is, Re2≤500 mm, if the first reference value Re1 is greater than the minimum value of the first positive reference interval 101 and less than or equal to the maximum value of the first positive reference interval 101, that is, 320 mm / h<Re1≤340 mm / h, S is 1, and the seeding power P when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re3+1*t1, that is, P (M+1) =Re3+0.3kw; if the first reference value Re1 is greater than the minimum value of the second positive reference interval 101 and less than or equal to the maximum value of the second positive reference interval 101, that is, 340mm / h<Re1≤360mm / h, S is 2, the seeding power P when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re3+2*t1, that is, P (M+1) =Re3+0.6kw.

[0069] Alternatively, on the basis that the second reference value Re2 is less than or equal to 500 mm, that is, Re2≤500 mm, if the first reference value Re1 is greater than or equal to the minimum value of the first negative reference interval 102 and less than the maximum value of the first negative reference interval 102, that is, 300 mm / h≤Re1<320 mm / h, T is 1, the seeding power P when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re3-1*t2, that is, P (M+1)=Re3-0.3kw; if the first reference value Re1 is greater than or equal to the minimum value of the second negative reference interval 102 and less than the maximum value of the second negative reference interval 102, that is, 280mm / h≤Re1<300mm / h, T is 2, the seeding power P when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re3-2*t2, that is, P (M+1) =Re3-0.6kw.

[0070] In other words, on the basis that the second reference value Re2 is less than or equal to 500mm, the first reference value Re1 exceeds the first preset range by 20mm / h, the seeding power when pulling the (M+1)th single crystal is automatically corrected to increase by 0.3kw on the basis of the reference power Re3; the first reference value Re1 is lower than the first preset range by 20mm / h, the seeding power when pulling the (M+1)th single crystal is automatically corrected to reduce by 0.3kw on the basis of the reference power Re3.

[0071] In other embodiments, the difference between the maximum value and the minimum value of a single positive reference interval 101 is a first deviation, and the maximum value and the minimum value of a single negative reference interval 102 are a second deviation. The first deviation and the second deviation may also be different; the positive correction amount t1 and the negative correction amount t2 may also be different. In other words, different division standards are used for the positive reference interval 101 and the negative reference interval 102, and different correction amounts are used to adjust the seeding power when pulling the (M+1)th single crystal, which is conducive to making the seeding power have different correction logics when the seeding pulling speed is in different numerical ranges, so as to further meet the actual needs when pulling the (M+1)th single crystal, thereby facilitating further improving the shoulder release survival rate of the pulled single crystal.

[0072] In some examples, the first deviation may be 10 mm / h to 15 mm / h, for example, the first deviation may be 11 mm / h, 12 mm / h, 13 mm / h or 14 mm / h, etc.; the second deviation may be 15 mm / h to 30 mm / h, for example, the second deviation may be 16 mm / h, 17 mm / h, 18 mm / h, 19 mm / h, 20 mm / h, 21 mm / h, 22 mm / h, 23 mm / h , 24mm / h, 25mm / h, 26mm / h, 27mm / h, 28mm / h or 29mm / h, etc.; the positive correction amount t1 can be 0.1kw~0.5kw, for example, the positive correction amount t1 can be 0.2kw, 0.3kw or 0.4kw, etc.; the negative correction amount t2 can be 0.4kw~1kw, for example, the negative correction amount t2 can be 0.5kw, 0.6kw, 0.7kw, 0.8kw or 0.9kw, etc.

[0073] In one example, in step S5, the first preset range is 250 mm / h to 320 mm / h, the second preset value may be 500 mm, the first deviation is 10 mm / h, the second deviation is 20 mm / h, the positive correction t1 is 0.2 kW, and the negative correction t2 is 0.5 kW.

[0074] Thus, in step S5, on the basis that the second reference value Re2 is less than or equal to the second preset value, i.e., Re2≤500mm, if the first reference value Re1 is greater than the minimum value of the first positive reference interval 101 and less than or equal to the maximum value of the first positive reference interval 101, i.e., 320mm / h<Re1≤330mm / h, S is 1, and the seeding power P when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re3+1*t1, that is, P (M+1) =Re3+0.2kw; if the first reference value Re1 is greater than the minimum value of the second positive reference interval 101 and less than or equal to the maximum value of the second positive reference interval 101, that is, 330mm / h<Re1≤340mm / h, S is 2, the seeding power P when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re3+2*t1, that is, P (M+1) =Re3+0.4kw.

[0075] Alternatively, on the basis that the second reference value Re2 is less than or equal to 500 mm, that is, Re2≤500 mm, if the first reference value Re1 is greater than or equal to the minimum value of the first negative reference interval 102 and less than the maximum value of the first negative reference interval 102, that is, 300 mm / h≤Re1<320 mm / h, T is 1, the seeding power P when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re3-1*t2, that is, P (M+1) =Re3-0.5kw; if the first reference value Re1 is greater than or equal to the minimum value of the second negative reference interval 102 and less than the maximum value of the second negative reference interval 102, that is, 280mm / h≤Re1<300mm / h, T is 2, the seeding power P when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re3-2*t2, that is, P (M+1) =Re3-1kw.

[0076] In other words, on the basis that the second reference value Re2 is less than or equal to 500mm, the first reference value Re1 exceeds the first preset range by 10mm / h, the seeding power when pulling the (M+1)th single crystal is automatically corrected to increase by 0.2kw on the basis of the reference power Re3; the first reference value Re1 is lower than the first preset range by 20mm / h, the seeding power when pulling the (M+1)th single crystal is automatically corrected to reduce by 0.5kw on the basis of the reference power Re3.

[0077] In other examples, the first deviation may be 15 mm / h to 30 mm / h, the second deviation may be 10 mm / h to 15 mm / h, the positive correction amount t1 may be 0.4 kw to 1 kw, and the negative correction amount t2 may be 0.1 kw to 0.5 kw. It should be noted that the same or corresponding parts as those in the above examples are not described in detail here.

[0078] It is worth noting that when the first deviation is larger than the second deviation, the corresponding positive correction amount t1 is also larger than the negative correction amount t2; vice versa, when the first deviation is smaller than the second deviation, the corresponding positive correction amount t1 is also smaller than the negative correction amount t2. This is conducive to improving the matching degree of seeding speed and seeding power when pulling the (M+1)th single crystal.

[0079] In some embodiments, the seeding power when pulling the Mth single crystal, that is, the reference power Re3 can be 60kw to 65kw. For example, the reference power Re3 can be 61kw, 62kw, 63kw or 64kw.

[0080] In some embodiments, in conjunction with reference Figure 2 and Figure 3 , Figure 3 Another schematic flow chart of a single crystal furnace temperature correction method provided by an embodiment of the present disclosure is provided. The single crystal furnace temperature correction method may further include the following steps:

[0081] After step S1 and before step S2, the method further includes step S11: obtaining the liquid surface brightness when pulling the Mth single crystal as the reference brightness Re4.

[0082] On the basis of step S5, step S51 is also included: if the first reference value Re1 is greater than the minimum value of the Sth positive reference interval 101 and less than or equal to the maximum value of the Sth positive reference interval 101, and the second reference value Re2 is less than or equal to the second preset value, the positive adjustment amount a1 is set, and the liquid surface brightness when pulling the (M+1)th single crystal is set to be the sum of the reference brightness Re4 and S times the positive adjustment amount a1, that is, the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re4+S*a1; if the first reference value Re1 is greater than or equal to the minimum value of the Tth negative reference interval 102 and less than the maximum value of the Tth negative reference interval 102, and the second reference value Re2 is less than or equal to the second preset value, the negative adjustment amount a2 is set, and the liquid surface brightness when pulling the (M+1)th single crystal is set to be the difference between the reference brightness Re4 and T times the negative adjustment amount a2, that is, the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re4-T*a2.

[0083] It should be noted that the seeding power is the working power of the heater crucible for heating, and the liquid surface brightness is the actual brightness of the liquid surface after the raw material is melted into liquid, which can be specifically detected by a sensor.

[0084] It is worth noting that in order to adjust the temperature in the single crystal furnace, in addition to adjusting the seeding power, the liquid surface brightness can also be adjusted, which is beneficial to further improve the consistency of temperature control during the crystal pulling process, so as to improve the shoulder release survival rate of the pulled single crystal. In order to improve the shoulder release survival rate of the pulled single crystal, in the single crystal furnace temperature correction method provided in an embodiment of the present disclosure, at least the seeding pulling speed and the equal diameter length when pulling the Mth single crystal are used as references to correct the liquid surface brightness when pulling the (M+1)th single crystal, and the correction logic is roughly divided into three situations, and different correction logics are adopted based on different situations. It should be noted that the parts that are the same or corresponding to the aforementioned correction of the seeding power when pulling the (M+1)th single crystal will not be repeated here.

[0085] The division of the positive reference interval 101 and the negative reference interval 102, and the values ​​of the positive adjustment amount a1 and the negative adjustment amount a2 include at least the following embodiments:

[0086] In some embodiments, the difference between the maximum and minimum values ​​of a single positive reference interval 101 is a first deviation, the maximum and minimum values ​​of a single negative reference interval 102 are a second deviation, the first deviation is equal to the second deviation, and the positive adjustment amount a1 is equal to the negative adjustment amount a2.

[0087] In other words, the same division standard is used for the positive reference interval 101 and the negative reference interval 102, and the same adjustment amount is used to adjust the liquid surface brightness when pulling the (M+1)th single crystal. This is beneficial for making the crystal induction temperature when pulling different single crystals vary as evenly as possible based on the uniform adjustment of the liquid surface brightness, so as to further ensure the consistency of temperature adjustment. Subsequently, many problems in the crystal pulling process can also be analyzed based on the uniform power change.

[0088] In some examples, the first deviation amount and the second deviation amount may both be 10 mm / h to 30 mm / h.

[0089] In some examples, the positive adjustment amount a1 and the negative adjustment amount a2 can both be 0.2 to 0.8. It is worth noting that the positive adjustment amount a1 and the negative adjustment amount a2 both refer to the adjustment amount of the liquid surface brightness, and the liquid surface brightness can also be understood as a grayscale value. For example, the positive adjustment amount a1 and the negative adjustment amount a2 can both be 0.3 units, 0.4 units, 0.5 units, 0.6 units, or 0.7 units, etc.

[0090] In an example, the first preset range is 250 mm / h to 320 mm / h, the second preset value may be 500 mm, the first deviation and the second deviation are both 20 mm / h, and the positive adjustment amount a1 and the negative adjustment amount a2 are both 0.5 units.

[0091] Thus, in step S5, on the basis that the second reference value Re2 is less than or equal to 500 mm, if the first reference value Re1 is greater than the minimum value of the first positive reference interval 101 and less than or equal to the maximum value of the first positive reference interval 101, that is, 320 mm / h<Re1≤340 mm / h, S is 1, and the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re4+1*a1, that is, A (M+1) =Re4+0.5; if the first reference value Re1 is greater than the minimum value of the second positive reference interval 101 and less than or equal to the maximum value of the second positive reference interval 101, that is, 340mm / h<Re1≤360mm / h, S is 2, the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re4+2*a1, that is, A (M+1) =Re4+1.0.

[0092] Alternatively, on the basis that the second reference value Re2 is less than or equal to 500 mm, if the first reference value Re1 is greater than or equal to the minimum value of the first negative reference interval 102 and less than the maximum value of the first negative reference interval 102, that is, 300 mm / h≤Re1<320 mm / h, T is 1, and the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re4-1*a2, that is, A (M+1) =Re4-0.5; if the first reference value Re1 is greater than or equal to the minimum value of the second negative reference interval 102 and less than the maximum value of the second negative reference interval 102, that is, 280mm / h≤Re1<300mm / h, T is 2, the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re4-2*a2, that is, A (M+1) =Re4-1.0.

[0093] In other words, on the basis that the second reference value Re2 is less than or equal to 500mm, the first reference value Re1 exceeds the first preset range by 20mm / h, and the liquid surface brightness during the pulling of the (M+1)th single crystal is automatically corrected to increase by 0.5 units based on the reference brightness Re4; the first reference value Re1 is lower than the first preset range by 20mm / h, and the liquid surface brightness during the pulling of the (M+1)th single crystal is automatically corrected to decrease by 0.5 units based on the reference brightness Re4.

[0094] In other embodiments, the difference between the maximum value and the minimum value of a single positive reference interval 101 is a first deviation, and the maximum value and the minimum value of a single negative reference interval 102 are a second deviation. The first deviation and the second deviation may also be different; the positive adjustment amount a1 and the negative adjustment amount a2 may also be different. In other words, different division standards are used for the positive reference interval 101 and the negative reference interval 102, and different adjustment amounts are used to adjust the liquid surface brightness when pulling the (M+1)th single crystal, which is conducive to making the liquid surface brightness have different correction logics when the seeding speed is in different numerical ranges, so as to further meet the actual needs when pulling the (M+1)th single crystal, thereby facilitating further improving the shoulder release survival rate of the pulled single crystal.

[0095] In some examples, the first deviation may be 10 mm / h to 15 mm / h. For example, the first deviation may be 11 mm / h, 12 mm / h, 13 mm / h, or 14 mm / h. The second deviation may be 15 mm / h to 30 mm / h. For example, the second deviation may be 16 mm / h, 17 mm / h, 18 mm / h, 19 mm / h, 20 mm / h, 21 mm / h, 22 mm / h, 23 mm / h, 24 mm / h, 25 mm / h, 26 mm / h, 27 mm / h, 28 mm / h, or 29 mm / h. The positive adjustment amount a1 may be 0.2 to 0.5. For example, the positive adjustment amount a1 may be 0.3 units or 0.4 units. The negative adjustment amount a2 may be 0.4 to 0.8. For example, the negative adjustment amount a2 may be 0.5 units, 0.6 units, or 0.7 units.

[0096] In one example, in step S5, the first preset range is 250 mm / h to 320 mm / h, the second preset value can be 500 mm, the first deviation is 10 mm / h, the second deviation is 20 mm / h, the positive adjustment amount a1 is 0.3 units, and the negative adjustment amount a2 can be 0.7 units.

[0097] Thus, in step S5, on the basis that the second reference value Re2 is less than or equal to the second preset value, i.e., Re2≤500mm, if the first reference value Re1 is greater than the minimum value of the first positive reference interval 101 and less than or equal to the maximum value of the first positive reference interval 101, i.e., 320mm / h<Re1≤330mm / h, S is 1, and the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re4+1*a1, that is, A (M+1)=Re4+0.3; if the first reference value Re1 is greater than the minimum value of the second positive reference interval 101 and less than or equal to the maximum value of the second positive reference interval 101, that is, 330mm / h<Re1≤340mm / h, S is 2, and the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re4+2*a1, that is, A (M+1) =Re4+0.6.

[0098] Alternatively, on the basis that the second reference value Re2 is less than or equal to 500 mm, that is, Re2≤500 mm, if the first reference value Re1 is greater than or equal to the minimum value of the first negative reference interval 102 and less than the maximum value of the first negative reference interval 102, that is, 300 mm / h≤Re1<320 mm / h, T is 1, the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re4-1*a2, that is, A (M+1) =Re4-0.7; if the first reference value Re1 is greater than or equal to the minimum value of the second negative reference interval 102 and less than the maximum value of the second negative reference interval 102, that is, 280mm / h≤Re1<300mm / h, T is 2, the liquid surface brightness A when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re4-2*a2, that is, A (M+1) =Re4-1.4.

[0099] In other words, on the basis that the second reference value Re2 is less than or equal to 500mm, the first reference value Re1 exceeds the first preset range by 10mm / h, and the liquid surface brightness during the pulling of the (M+1)th single crystal is automatically corrected to increase by 0.3 units based on the reference brightness Re4; the first reference value Re1 is lower than the first preset range by 20mm / h, and the liquid surface brightness during the pulling of the (M+1)th single crystal is automatically corrected to decrease by 0.7 units based on the reference brightness Re4.

[0100] In other examples, the first deviation may be 15 mm / h to 30 mm / h, the second deviation may be 10 mm / h to 15 mm / h, the positive adjustment amount a1 may be 0.4 to 0.8, and the negative adjustment amount a2 may be 0.2 to 0.5. It should be noted that the same or corresponding parts as those in the above examples are not described in detail here.

[0101] It is worth noting that when the first deviation is larger than the second deviation, the corresponding positive adjustment amount a1 is also larger than the negative adjustment amount a2; vice versa, when the first deviation is smaller than the second deviation, the corresponding positive adjustment amount a1 is also smaller than the negative adjustment amount a2. This is conducive to improving the matching degree between the seeding speed and the liquid surface brightness when pulling the (M+1)th single crystal.

[0102] In some embodiments, the liquid surface brightness when pulling the Mth single crystal, that is, the reference brightness Re4, can be 65 to 70. For example, the reference brightness Re4 can be 66 units, 67 units, 68 units, or 69 units.

[0103] In some embodiments, the crystal induction power when pulling the (M+1)th single crystal can be adjusted over a period of time to change the liquid surface temperature, thereby changing the liquid surface brightness value, thereby lowering or raising the liquid surface brightness when pulling the (M+1)th single crystal.

[0104] In some embodiments, in conjunction with reference Figure 2 , Figure 4 and Figure 5 , Figure 4 This is another flow chart of a single crystal furnace temperature correction method provided by an embodiment of the present disclosure. Figure 5 This is a numerical axis diagram of a third preset range, a positive reference interval, and a negative reference interval in a single crystal furnace temperature correction method provided in an embodiment of the present disclosure. The single crystal furnace temperature correction method also includes the following steps:

[0105] After step S1 and before step S2, the method further includes step S12: obtaining the liquid nozzle distance when pulling the Mth single crystal as a third reference value Re5.

[0106] Based on step S5, step S52 is also included: if the third reference value Re5 is within the third preset range 103, the first reference value Re1 is within the first preset range 100, and the second reference value Re2 is greater than the second preset value, the seeding power when pulling the (M+1)th single crystal is set to the reference power Re3.

[0107] Step S53 : setting R consecutive positive reference intervals 104 based on the maximum value in the third preset range 103 .

[0108] It is worth noting that reference Figure 5 , R consecutive positive reference intervals 104 means: the minimum value of the Rth positive reference interval 104 is the maximum value of the (R-1)th positive reference interval 104, and the maximum value of the Rth positive reference interval 104 is the minimum value of the (R+1)th positive reference interval 104.

[0109] Step S54 : setting Q consecutive negative reference intervals 105 based on the minimum value in the third preset range 103 .

[0110] It is worth noting that reference Figure 5, Q consecutive negative reference intervals 105 mean: the minimum value of the Qth negative reference interval 105 is the maximum value of the (Q-1)th negative reference interval 105, and the maximum value of the Qth negative reference interval 105 is the minimum value of the (Q+1)th negative reference interval 105.

[0111] Step S55: If the third reference value Re5 is greater than the minimum value of the Rth positive reference interval 104 and less than or equal to the maximum value of the Rth positive reference interval 104, and the first reference value Re1 is within the first preset range 100, the positive reference quantity t3 is set, and the seeding power when pulling the (M+1)th single crystal is set to the sum of the reference power Re3 and R times the positive reference quantity t3; if the third reference value Re5 is greater than or equal to the minimum value of the Qth negative reference interval 105 and less than the maximum value of the Qth negative reference interval 105, and the first reference value Re1 is within the first preset range 100, the negative reference quantity t4 is set, and the seeding power when pulling the (M+1)th single crystal is set to the difference between the reference power Re3 and Q times the negative reference quantity t4; R and Q are both positive integers greater than or equal to 1.

[0112] It is worth noting that when the first reference value Re1 is within the first preset range 100, that is, when the seeding pulling speed when pulling the Mth single crystal meets the standard, but the third reference value Re5 is not within the third preset range 103, that is, when the liquid nozzle distance when pulling the Mth single crystal does not meet the standard, it is not necessary to consider whether the second reference value Re2 is greater than the second preset value, that is, it is not necessary to consider whether the equal diameter length when pulling the Mth single crystal meets the standard. In order to improve the shoulder release survival rate of pulling single crystals, in the single crystal furnace temperature correction method provided by an embodiment of the present disclosure, on the basis of taking the seeding pulling speed and the equal diameter length when pulling the Mth single crystal as references, the liquid nozzle distance when pulling the Mth single crystal is also used as a reference in some cases to correct the seeding power when pulling the (M+1)th single crystal, and the correction logic is roughly divided into the following three situations, and different correction logics are adopted based on different situations.

[0113] First, a third preset range is set for the liquid inlet distance, and the liquid inlet distance when pulling the Mth single crystal is used as the third reference value Re5. Moreover, R consecutive positive reference intervals 104 and Q consecutive negative reference intervals 105 are set based on the maximum and minimum values ​​in the third preset range 103, respectively, and the positive reference amount t3 and the negative reference amount t4 are set respectively. It should be noted that the liquid inlet distance refers to the distance between the lower edge of the heat shield or guide tube in the single crystal furnace and the molten silicon liquid level in the crucible of the single crystal furnace.

[0114] Scenario 4: If the seeding speed and the liquid nozzle distance when pulling the Mth single crystal meet the preset requirements, that is, the first reference value Re1 is within the first preset range 100, and the third reference value Re5 is within the third preset range 103, the seeding power when pulling the (M+1)th single crystal is not additionally corrected, that is, the seeding power when pulling the (M+1)th single crystal is set to the reference power Re3. In other words, P (M+1) =Re3.

[0115] Scenario 5: When the first reference value Re1 is within the first preset range 100, but the third reference value Re5 is greater than the minimum value of the Rth positive reference interval 104 and less than or equal to the maximum value of the Rth positive reference interval 104, that is, when the third reference value Re5 falls into the Rth positive reference interval 104, the seeding power when pulling the (M+1)th single crystal is automatically corrected to be the sum of the reference power Re3 and the R times positive reference amount t3. In other words, P (M+1) =Re3+R*t3.

[0116] Case 6: When the first reference value Re1 is within the first preset range 100, but the third reference value Re5 is greater than or equal to the minimum value of the Qth negative reference interval 105 and less than the maximum value of the Qth negative reference interval 105, that is, when the third reference value Re5 falls into the Qth negative reference interval 105, the seeding power when pulling the (M+1)th single crystal is automatically corrected to be the difference between the reference power Re3 and the Q times negative reference amount t4. In other words, P (M+1) =Re3-Q*t4.

[0117] It can be seen that when the seeding pulling speed meets the standard when pulling the Mth single crystal, but the liquid nozzle distance does not meet the standard when pulling the Mth single crystal, no matter the third reference value in situation five exceeds the maximum value of the third preset range, or the third reference value in situation six is ​​less than the minimum value of the third preset range, the seeding power when pulling the (M+1)th single crystal can be automatically corrected in combination with the set positive reference value t3 or negative reference value t4, which is beneficial to further improve the consistency of temperature control in the crystal pulling process, so as to improve the shoulder release survival rate of the pulled single crystal.

[0118] It is worth noting that, based on step S1, step S11 and step S12 can exist at the same time, that is, while obtaining the seeding pulling speed and equal diameter length of the Mth single crystal, the liquid surface brightness and liquid port distance when pulling the Mth single crystal can be obtained. Further, based on step S5, step S51, step S52 to step S54 can exist at the same time.

[0119] In other words, on the basis of adjusting the seeding power when pulling the (M+1)th single crystal based on both the seeding pulling speed and the equal diameter length when pulling the Mth single crystal, when the seeding pulling speed when pulling the Mth single crystal meets the standard but the liquid nozzle distance when pulling the Mth single crystal does not meet the standard, the seeding power when pulling the (M+1)th single crystal can also be adjusted according to the liquid nozzle distance when pulling the Mth single crystal. In addition, the seeding power when pulling the (M+1)th single crystal is adjusted based on the relevant parameters when pulling the Mth single crystal, and the liquid surface brightness when pulling the (M+1)th single crystal can also be adjusted based on the relevant parameters when pulling the Mth single crystal.

[0120] Steps S52 to S54 are described in detail below.

[0121] In some embodiments, reference Figure 5 , the third preset range 103 set in step S52 can be 30 mm to 35 mm. Thus, if the liquid nozzle distance when pulling the Mth single crystal in step S52, i.e., the third reference value Re5, meets the following condition: 30 mm ≥ Re5 ≥ 35 mm, then it is determined that the third reference value Re5 is within the third preset range 103, i.e., the third reference value Re5 meets the standard.

[0122] The division of the positive reference interval 104 and the negative reference interval 105, and the values ​​of the positive reference amount t3 and the negative reference amount t4 include at least the following embodiments:

[0123] In some embodiments, reference Figure 5 The difference between the maximum value and the minimum value of the single positive reference interval 104 is the first reference difference, the maximum value and the minimum value of the single negative reference interval 105 is the second reference difference, the first reference difference is equal to the second reference difference, and the positive reference amount t3 is equal to the negative reference amount t4.

[0124] It is worth noting that when the third reference value Re5 is greater than the maximum value of the third preset range 103, the degree to which the third reference value Re5 is greater than the maximum value of the third preset range 103 is divided into multiple levels, each level corresponds to a positive reference interval 104, and the first deviation amount can be regarded as a division standard for the positive reference interval 104. Then, based on the different degrees to which the third reference value Re5 is greater than the maximum value of the third preset range 103, the crystal induction power when pulling the (M+1)th single crystal is increased to different degrees, so as to improve the consistency of temperature control during the crystal pulling process, which is beneficial to improve the shoulder release survival rate of the pulled single crystal.

[0125] Similarly, when the third reference value Re5 is less than the minimum value of the third preset range 103, the degree to which the third reference value Re5 is less than the minimum value of the third preset range 103 is divided into multiple levels, each level corresponds to a negative reference interval 105, and the second deviation can be regarded as a division standard for the negative reference interval 105. Then, based on the different degrees to which the third reference value Re5 is less than the minimum value of the third preset range 103, the crystal induction power when pulling the (M+1)th single crystal is reduced to different degrees to improve the consistency of temperature control during the crystal pulling process, which is beneficial to improving the shoulder release survival rate of the pulled single crystal.

[0126] On this basis, the first deviation is designed to be equal to the second deviation, and the positive reference amount t3 is designed to be equal to the negative reference amount t4. In other words, the same division standard is used for the positive reference interval 104 and the negative reference interval 105, and the same correction amount is used to adjust the seeding power when pulling the (M+1)th single crystal, which is conducive to making the seeding temperature when pulling different single crystals change as uniformly as possible based on the uniform adjustment of the seeding power, so as to further ensure the consistency of temperature adjustment, and subsequently many problems in the crystal pulling process can be analyzed based on the uniform power change.

[0127] In some examples, the first reference difference and the second reference difference may both be 1 mm to 6 mm. For example, the first reference difference and the second reference difference may both be 2 mm, 3 mm, 4 mm, or 5 mm.

[0128] In some examples, the positive reference amount t3 and the negative reference amount t4 can both be 0.1kw~1kw. For example, the positive reference amount t3 and the negative reference amount t4 can both be 0.2kw, 0.3kw, 0.4kw, 0.5kw, 0.6kw, 0.7kw, 0.8kw or 0.9kw, etc.

[0129] It is worth noting that, in practical applications, the values ​​of the positive reference amount and the positive correction amount may be the same or different, and the values ​​of the negative reference amount and the negative correction amount may be the same or different.

[0130] In one example, the first preset range is 250 mm / h to 320 mm / h, the third preset range is 30 mm to 35 mm, the first reference difference and the second reference difference are both 2 mm, and the positive reference amount t3 and the negative reference amount t4 are both 0.3 kW.

[0131] Thus, in step S5, on the basis that the first reference value Re1 is within the first preset range 100, i.e., 250 mm / h≤Re1≤320 mm / h, if the third reference value Re5 is greater than the minimum value of the first positive reference interval 104 and less than or equal to the maximum value of the first positive reference interval 104, i.e., 35 mm<Re5≤37 mm, R is 1, the seeding power P when pulling the (M+1)th single crystal is automatically corrected.(M+1) =Re3+1*t3, that is, P (M+1) =Re3+0.3kw; if the third reference value Re5 is greater than the minimum value of the second positive reference interval 104 and less than or equal to the maximum value of the second positive reference interval 104, that is, 37mm<Re5≤39mm, R is 2, the seeding power P when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re3+2*t3, that is, P (M+1) =Re3+0.6kw.

[0132] Alternatively, on the basis that the first reference value Re1 is within the first preset range 100, i.e., 250 mm / h≤Re1≤320 mm / h, if the third reference value Re5 is greater than or equal to the minimum value of the first negative reference interval 105 and less than the maximum value of the first negative reference interval 105, i.e., 28 mm≤Re5<30 mm, Q is 1, the seeding power P when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re3-1*t4, that is, P (M+1) =Re3-0.3kw; if the first reference value Re1 is greater than or equal to the minimum value of the second negative reference interval 105 and less than the maximum value of the second negative reference interval 105, that is, 26mm≤Re5<28mm, Q is 2, the seeding power P when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re3-2*t4, that is, P (M+1) =Re3-0.6kw.

[0133] In other words, on the basis that the first reference value Re1 is within the first preset range 100, for every 2mm that the third reference value Re5 exceeds the third preset range, the seeding power when pulling the (M+1)th single crystal is automatically corrected to increase by 0.3kw on the basis of the reference power Re3; for every 2mm that the third reference value Re5 is lower than the third preset range, the seeding power when pulling the (M+1)th single crystal is automatically corrected to reduce by 0.3kw on the basis of the reference power Re3.

[0134] In other embodiments, reference Figure 5 , the difference between the maximum value and the minimum value of a single positive reference interval 104 is the first reference difference, the maximum value and the minimum value of a single negative reference interval 105 is the second reference difference, the first reference difference and the second reference difference are also acceptable; the positive reference amount t3 and the negative reference amount t4 are also acceptable. In other words, different division standards are used for the positive reference interval 104 and the negative reference interval 105, and different reference amounts are used to adjust the seeding power when pulling the (M+1)th single crystal, which is conducive to making the seeding power have different correction logics when the liquid mouth distance is in different numerical ranges, so as to further meet the actual needs when pulling the (M+1)th single crystal, thereby facilitating further improving the shoulder release survival rate of the pulled single crystal.

[0135] In some examples, the first reference difference can be 1mm~3mm, for example, the first reference difference can be 2mm; the second reference difference can be 3mm~6mm, for example, the second reference difference can be 4mm or 5mm; the positive reference amount t3 can be 0.1kw~0.5kw, for example, the positive reference amount t3 can be 0.2kw, 0.3kw or 0.4kw, etc.; the negative reference amount t4 can be 0.4kw~1kw, for example, the negative reference amount t4 can be 0.5kw, 0.6kw, 0.7kw, 0.8kw or 0.9kw, etc.

[0136] In one example, the first preset range is 250 mm / h to 320 mm / h, the third preset range is 30 mm to 35 mm, the first reference difference is 1 mm, the second reference difference is 5 mm, the positive reference amount t3 is 0.1 kW, and the negative reference amount t4 is 0.8 kW.

[0137] Thus, in step S5, on the basis that the first reference value Re1 is within the first preset range 100, i.e., 250 mm / h≤Re1≤320 mm / h, if the third reference value Re5 is greater than the minimum value of the first positive reference interval 104 and less than or equal to the maximum value of the first positive reference interval 104, i.e., 35 mm<Re5≤36 mm, R is 1, the seeding power P when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re3+1*t3, that is, P (M+1) =Re3+0.1kw; if the third reference value Re5 is greater than the minimum value of the second positive reference interval 104 and less than or equal to the maximum value of the second positive reference interval 104, that is, 36mm<Re5≤37mm, R is 2, the seeding power P when pulling the (M+1)th single crystal is automatically corrected (M+1) =Re3+2*t3, that is, P (M+1) =Re3+0.2kw.

[0138] Alternatively, on the basis that the first reference value Re1 is within the first preset range 100, i.e., 250 mm / h≤Re1≤320 mm / h, if the third reference value Re5 is greater than or equal to the minimum value of the first negative reference interval 105 and less than the maximum value of the first negative reference interval 105, i.e., 25 mm≤Re5<30 mm, Q is 1, the seeding power P when pulling the (M+1)th single crystal is automatically corrected. (M+1) =Re3-1*t4, that is, P (M+1) =Re3-0.8kw; if the first reference value Re1 is greater than or equal to the minimum value of the second negative reference interval 105 and less than the maximum value of the second negative reference interval 105, that is, 20mm≤Re5<25mm, Q is 2, the seeding power P when pulling the (M+1)th single crystal is automatically corrected (M+1)=Re3-2*t4, that is, P (M+1) =Re3-1.6kw.

[0139] In other words, on the basis that the first reference value Re1 is within the first preset range 100, for every 1mm that the third reference value Re5 exceeds the third preset range, the seeding power when pulling the (M+1)th single crystal is automatically corrected to increase by 0.1kw on the basis of the reference power Re3; for every 5mm that the third reference value Re5 is lower than the third preset range, the seeding power when pulling the (M+1)th single crystal is automatically corrected to reduce by 0.8kw on the basis of the reference power Re3.

[0140] In other examples, the first reference difference may be 3 mm to 6 mm, the second reference difference may be 1 mm to 3 mm, the positive reference amount t3 may be 0.4 kw to 1 kw, and the negative reference amount t4 may be 0.1 kw to 0.5 kw. It should be noted that the same or corresponding parts as those in the above examples are not described in detail here.

[0141] It is worth noting that when the first reference difference is larger than the second reference difference, the corresponding positive reference amount t3 is also larger than the negative reference amount t4; vice versa, when the first reference difference is smaller than the second reference difference, the corresponding positive reference amount t3 is also smaller than the negative reference amount t4. This is conducive to improving the matching degree between the liquid mouth distance and the seeding power when pulling the (M+1)th single crystal.

[0142] To summarize, when it is determined that the seeding pulling speed and the equal-diameter length when pulling the Mth single crystal meet the set requirements, the seeding power when pulling the (M+1)th single crystal is not additionally corrected, that is, the seeding power when pulling the (M+1)th single crystal is set as the reference power, that is, the seeding power when pulling the Mth single crystal. This is beneficial to avoid the error when manually setting the parameters again to ensure the consistency of temperature control during the crystal pulling process and improve the crystal pulling efficiency. Secondly, based on the maximum value and the minimum value in the first preset range, S consecutive positive reference intervals and T consecutive negative reference intervals are set respectively, and the positive correction amount and the negative correction amount are set respectively. When it is determined that the seeding pulling speed and the equal-diameter length when pulling the Mth single crystal do not meet the set requirements, based on the seeding pulling speed when pulling the Mth single crystal, that is, which positive reference interval or negative reference interval the first reference value falls into, the seeding power when pulling the (M+1)th single crystal is automatically corrected in combination with the set positive correction amount or negative correction amount, which is beneficial to further improve the consistency of temperature control during the crystal pulling process, so as to improve the shoulder release survival rate of the pulled single crystal.

[0143] Another embodiment of the present disclosure further provides a single crystal furnace temperature correction device, which is used to implement the single crystal furnace temperature correction method provided in the above embodiment. The single crystal furnace temperature correction device provided in another embodiment of the present disclosure will be described in detail below in conjunction with the accompanying drawings. It should be noted that the parts that are the same or corresponding to the above embodiment will not be repeated here.

[0144] The single crystal furnace temperature correction device includes: a processor, a communication interface, a memory and a communication bus, wherein the processor, the communication interface and the memory communicate with each other through the communication bus; the memory is used to store computer programs or instructions; the processor is used to run the computer programs or instructions stored in the memory to implement the single crystal furnace temperature correction method provided in the above-mentioned embodiment.

[0145] Another embodiment of the present disclosure further provides a single crystal furnace, and the single crystal furnace temperature correction method or single crystal furnace temperature correction device provided in the above embodiment is applied to the single crystal furnace. The single crystal furnace provided in another embodiment of the present disclosure will be described in detail below in conjunction with the accompanying drawings. It should be noted that the parts that are the same or corresponding to the above embodiment will not be repeated here.

[0146] The single crystal furnace includes: a heater, a crucible, a parameter detection device and a single crystal furnace temperature correction device. The single crystal furnace temperature correction device is configured to implement the single crystal furnace temperature correction method provided in the aforementioned embodiment; the single crystal furnace temperature correction device is communicatively connected with the heater and the parameter detection device; the heater is configured to heat the crucible, and the seeding power is the working power of the heater; the parameter detection device is configured to at least obtain the seeding pulling speed when pulling the Mth single crystal, the equal diameter length when pulling the Mth single crystal, and the seeding power when pulling the Mth single crystal.

[0147] In some embodiments, the parameter detection device may also be configured to obtain the liquid surface brightness when pulling the Mth single crystal. In this way, the single crystal furnace temperature correction device can not only adjust the seeding power, but also adjust the liquid surface brightness to adjust the temperature in the single crystal furnace, thereby facilitating further improving the temperature adjustment consistency during the crystal pulling process, so as to improve the shoulder release survival rate of the pulled single crystal.

[0148] In some embodiments, the parameter detection device may also be configured to obtain the liquid nozzle distance when pulling the Mth single crystal. In this way, the single crystal furnace temperature correction device may not only adjust the seeding power when pulling the (M+1)th single crystal based on both the seeding pulling speed and the equal diameter length when pulling the Mth single crystal, but may also adjust the seeding power when pulling the (M+1)th single crystal according to the liquid nozzle distance when pulling the Mth single crystal when the seeding pulling speed meets the standard but the liquid nozzle distance when pulling the Mth single crystal does not meet the standard.

[0149] Those skilled in the art can understand that the above-mentioned embodiments are specific examples for implementing the present disclosure, and in practical applications, various changes can be made to them in form and detail without departing from the spirit and scope of the embodiments of the present disclosure. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the embodiments of the present disclosure, so the protection scope of the embodiments of the present disclosure shall be based on the scope defined in the claims.

Claims

1. A single crystal furnace temperature correction method, characterized in that: include: Obtaining a seeding pulling speed when pulling an M-th single crystal as a first reference value, an equal diameter length when pulling the M-th single crystal as a second reference value, and a seeding power when pulling the M-th single crystal as a reference power; If the first reference value is within a first preset range and the second reference value is greater than a second preset value, the seeding power when pulling the (M+1)th single crystal is set to the reference power; Based on the maximum value in the first preset range, S consecutive positive reference intervals are set, the minimum value of the Sth positive reference interval is the maximum value of the (S-1)th positive reference interval, and the maximum value of the Sth positive reference interval is the minimum value of the (S+1)th positive reference interval; T consecutive negative reference intervals are set based on the minimum value in the first preset range, the minimum value of the Tth negative reference interval is the maximum value of the (T-1)th negative reference interval, and the maximum value of the Tth negative reference interval is the minimum value of the (T+1)th negative reference interval; If the first reference value is greater than the minimum value of the Sth positive reference interval and less than or equal to the maximum value of the Sth positive reference interval, and the second reference value is less than or equal to the second preset value, a positive correction amount is set, and the seeding power when pulling the (M+1)th single crystal is set to be the sum of the reference power and S times the positive correction amount; If the first reference value is greater than or equal to the minimum value of the Tth negative reference interval and less than the maximum value of the Tth negative reference interval, and the second reference value is less than or equal to the second preset value, a negative correction amount is set, and the seeding power when pulling the (M+1)th single crystal is set to be the difference between the reference power and T times the negative correction amount; M, S, and T are all positive integers greater than or equal to 1.

2. The single crystal furnace temperature correction method according to claim 1, characterized in that: Also includes: Obtaining the liquid surface brightness when pulling the Mth single crystal as a reference brightness; If the first reference value is greater than the minimum value of the Sth positive reference interval and less than or equal to the maximum value of the Sth positive reference interval, and the second reference value is less than or equal to a second preset value, the single crystal furnace temperature correction method further includes: setting a positive adjustment amount, and setting the liquid surface brightness when pulling the (M+1)th single crystal to be the sum of the reference brightness and S times the positive adjustment amount; If the first reference value is greater than or equal to the minimum value of the Tth negative reference interval and less than the maximum value of the Tth negative reference interval, and the second reference value is less than or equal to a second preset value, the single crystal furnace temperature correction method also includes: setting a negative adjustment amount, and setting the liquid surface brightness when pulling the (M+1)th single crystal to the difference between the reference brightness and T times the negative adjustment amount.

3. The single crystal furnace temperature correction method according to claim 1, characterized in that: Also includes: Obtaining the liquid nozzle distance when pulling the Mth single crystal as a third reference value; If the third reference value is within the third preset range, the first reference value is within the first preset range, and the second reference value is greater than the second preset value, the seeding power when pulling the (M+1)th single crystal is set to the reference power; R consecutive positive reference intervals are set based on the maximum value in the third preset range, the minimum value of the Rth positive reference interval is the maximum value of the (R-1)th positive reference interval, and the maximum value of the Rth positive reference interval is the minimum value of the (R+1)th positive reference interval; Q consecutive negative reference intervals are set based on the minimum value in the third preset range, the minimum value of the Qth negative reference interval is the maximum value of the (Q-1)th negative reference interval, and the maximum value of the Qth negative reference interval is the maximum value of the (Q-1)th negative reference interval. The minimum value of Q+1) negative reference intervals; If the third reference value is greater than the minimum value of the Rth positive reference interval and less than or equal to the maximum value of the Rth positive reference interval, and the first reference value is within the first preset range, a positive reference value is set, and the seeding power when pulling the (M+1)th single crystal is set to be the sum of the reference power and R times the positive reference value; If the third reference value is greater than or equal to the minimum value of the Qth negative reference interval and less than the maximum value of the Qth negative reference interval, and the first reference value is within the first preset range, a negative reference value is set, and the seeding power when pulling the (M+1)th single crystal is set to be the difference between the reference power and Q times the negative reference value; R and Q are both positive integers greater than or equal to 1.

4. The single crystal furnace temperature correction method according to claim 3, characterized in that: The third preset range is 30 mm to 35 mm.

5. The single crystal furnace temperature correction method according to claim 3, characterized in that: The difference between the maximum value and the minimum value of a single positive reference interval is a first reference difference, the maximum value and the minimum value of a single negative reference interval is a second reference difference, and the first reference difference is equal to the second reference difference; The positive reference amount and the negative reference amount are equal; Wherein, the first reference difference and the second reference difference are both 1mm-6mm; the positive reference amount and the negative reference amount are both 0.1kw-1kw.

6. The single crystal furnace temperature correction method according to claim 3, characterized in that: The difference between the maximum value and the minimum value of a single positive reference interval is a first reference difference, and the maximum value and the minimum value of a single negative reference interval is a second reference difference, and the first reference difference is not equal to the second reference difference; The positive reference amount and the negative reference amount are not equal; Among them, the first reference difference is 1mm~3mm, the second reference difference is 3mm~6mm, the positive reference amount is 0.1kw~0.5kw, and the negative reference amount is 0.4kw~1kw; or, the first reference difference is 3mm~6mm, the second reference difference is 1mm~3mm, the positive reference amount is 0.4kw~1kw, and the negative reference amount is 0.1kw~0.5kw.

7. The single crystal furnace temperature correction method according to any one of claims 1 to 6, characterized in that: The first preset range is 250 mm / h to 320 mm / h; and / or the second preset value is 400 mm to 600 mm.

8. The single crystal furnace temperature correction method according to any one of claims 1 to 6, characterized in that: The difference between the maximum value and the minimum value of a single positive reference interval is a first deviation, the maximum value and the minimum value of a single negative reference interval is a second deviation, the first deviation is equal to the second deviation; the positive correction is equal to the negative correction; Wherein, the first deviation amount and the second deviation amount are both 10 mm / h to 30 mm / h; the positive correction amount and the negative correction amount are both 0.1 kw to 1 kw.

9. The single crystal furnace temperature correction method according to any one of claims 1 to 6, characterized in that: The difference between the maximum value and the minimum value of a single positive reference interval is a first deviation, the maximum value and the minimum value of a single negative reference interval is a second deviation, the first deviation is not equal to the second deviation; the positive correction is not equal to the negative correction; Among them, the first deviation is 10mm / h~15mm / h, the second deviation is 15mm / h~30mm / h, the positive correction is 0.1kw~0.5kw, and the negative correction is 0.4kw~1kw; or, the first deviation is 15mm / h~30mm / h, the second deviation is 10mm / h~15mm / h, the positive correction is 0.4kw~1kw, and the negative correction is 0.1kw~0.5kw.

10. A single crystal furnace, characterized in that: The single crystal furnace comprises: a heater, a crucible, a parameter detection device and a single crystal furnace temperature correction device, wherein the single crystal furnace temperature correction device is configured to implement the single crystal furnace temperature correction method according to any one of claims 1 to 9; The single crystal furnace temperature correction device is communicatively connected with the heater and the parameter detection device; The heater is configured to heat the crucible, and the seeding power is the working power of the heater; the parameter detection device is configured to at least obtain the seeding pulling speed when pulling the Mth single crystal, the equal diameter length when pulling the Mth single crystal, and the seeding power when pulling the Mth single crystal.

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