Method and device for correcting measurement error of charge level gauge based on temperature compensation

Abstract

The invention discloses a method and device for correcting the measurement error of a level gage based on temperature compensation, and the method comprises the following steps: S1, installing at least one temperature measurement platinum resistor at one end, which is not connected with an electronic assembly, of a crystal of the level gage, and enabling the temperature measurement platinum resistor to be connected with a temperature transmitter in an electrical cabinet; s2, at least one temperature sensor is installed in an electronic assembly of the level gage; s3, data fed back by the temperature sensor and data fed back by the temperature measuring platinum resistor are T1 and T2 respectively and are fed back to the single-chip microcomputer; s4, the T1 and the T2 are used for compensating and correcting the counting rate measured by the electronic component of the level gage; the device has the beneficial effect that the measurement error caused by the influence of the temperature on the level gage is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of material level meter measurement, and in particular to a method and a device for correcting material level meter measurement errors based on temperature compensation. Background Art

[0002] Hydrometallurgy technology refers to the process of separating and extracting metals by placing metal ores in acidic solutions through a series of processes such as leaching, extraction, and reduction.

[0003] In the process of hydrometallurgical technology, the material level in the reactor is an important process parameter. The reactor often has special working conditions such as high temperature, high pressure, and strong acidity, and may have equipment such as stirring devices in the reactor that interfere with the measurement. Conventional measuring instruments are difficult to achieve accurate material level measurement. Non-contact radioactive nuclear radiation level meters are not affected by the measured medium, are easy to install and maintain, and are therefore often selected in actual production. Due to the limitations of various practical conditions, typical nuclear radiation level meters usually increase the measuring range by increasing the length of the crystal, thereby achieving the ability to measure the material level in a reactor with a larger width and height.

[0004] Due to the limitations of the size and manufacturing materials of the long crystal, it is inevitable that the light flashes generated at the far end of the crystal will be attenuated by the conduction path when transmitted to the electronic components, which will cause the typical change trend of the counting rate corresponding to the working voltage of the photomultiplier tube to be different from that of the conventional nuclear radiation level meter with a short crystal; on the other hand, due to the limitations of the material and process manufacturing of the long crystal, the sensitivity of the long crystal to gamma rays is more affected by temperature changes than that of the short crystal. The level meter with a long crystal has a larger measurement error than the level meter with a short crystal, but the nuclear radiation level meter inevitably increases the measuring range by increasing the length of the crystal, so the correction of its error is one of the problems that need to be solved at present. Summary of the invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art; to this end, the present invention proposes a method and device for correcting the measurement error of a level meter based on temperature compensation, which is used to solve the technical problem that the sensitivity of long crystals to gamma rays is greatly affected by temperature changes due to the need to increase the measuring range and thus increase the length of the crystal in the prior art, resulting in large measurement errors.

[0006] To achieve the above object, the present invention provides a method for correcting the measurement error of a material level meter based on temperature compensation, comprising the following steps:

[0007] S1: Install at least one temperature measuring platinum resistor at one end of the crystal of the level meter that is not connected to the electronic components, and the temperature measuring platinum resistor is connected to the temperature transmitter in the electrical box;

[0008] S2: Install at least one temperature sensor inside the electronic component of the level meter;

[0009] S3: The feedback data of the temperature sensor and the temperature measuring platinum resistor are T1 and T2 respectively, and both are fed back to the single chip microcomputer;

[0010] S4: Use T1 and T2 to compensate and correct the counting rate measured by the electronic components of the level meter.

[0011] Further: the compensation correction in S4 is implemented by a count rate compensation program contained in the single chip microcomputer, and the compensation formula is as follows:

[0012] Nc=N*(a*T1+b)*(c*T2+d);

[0013] Wherein, (a*T1+b) is the compensation factor for compensating the effect of the electronic components on the count rate N during the process from cold startup to reaching thermal equilibrium;

[0014] (c*T2+d) is the compensation factor for compensating the change in crystal sensitivity to gamma rays caused by changes in ambient temperature, which affects the counting rate N.

[0015] Nc is the compensated counting rate;

[0016] N is the count rate measured by the electronic component in real time;

[0017] T1 is the temperature of the electronic components fed back by the temperature sensor;

[0018] T2 is the ambient temperature fed back by the temperature measuring platinum resistor;

[0019] a, b, c, and d are all compensation parameters;

[0020] The purpose of this step is to reduce the overall measurement offset error.

[0021] Further: the electronic component temperature T1 in the compensation factor (a*T1+b) is adjusted by the limiting parameters TH1 and TL1;

[0022] TH1 is the maximum operating temperature of the electronic components recorded;

[0023] The TL1 is the recorded minimum operating temperature of the electronic component;

[0024] When T1>TH1, take T1=T2+E, that is, T2+E replaces the original T1, where E is the temperature rise;

[0025] When TH1≥T1≥TL1, take T1, which changes with the measured temperature of the electronic component;

[0026] When TL1>T1, take T1=TL1, that is, TL1 replaces the original T1;

[0027] When electronic components are turned on from a cold state, the temperature is low and the carrier concentration is low, so the initial count rate will drift; as the equipment starts and runs, the components gradually heat up and reach a thermal equilibrium state; in this process, the generation and recombination processes of carriers will establish a dynamic balance, that is, a thermal equilibrium state. When the system reaches thermal equilibrium, the carrier concentration is stable and the distribution of electrons in the quantum state also tends to be stable, which will cause the count rate to tend to be stable. Therefore, it is necessary to compensate for the count rate of the electronic components from cold startup to thermal equilibrium, and its thermal equilibrium state is greatly limited by the working environment temperature of the equipment, and it is further adjusted according to the working environment of the equipment.

[0028] Further: the ambient temperature T2 in the compensation factor (c*T2+d)) is adjusted by the limiting parameters TH2 and TL2;

[0029] TH2 is the maximum temperature of the equipment working environment recorded;

[0030] The TL2 is the lowest temperature of the equipment working environment recorded;

[0031] When T2≥TH2, take T2=TH2, that is, TH2 replaces the original T2;

[0032] When TH2≥T2≥TL2, take T2, which changes with the actual ambient temperature value measured;

[0033] When TL2>T2, take T2=TL2, that is, TL2 replaces the original T2;

[0034] Due to the limitations of the size and manufacturing materials of the long crystal, it is inevitable that the light flicker generated at the far end of the crystal will be attenuated by the conduction path when it is transmitted to the electronic components. In addition, the sensitivity of the long crystal to gamma rays is more affected by temperature changes, and it is also necessary to compensate for the change in the crystal's sensitivity to gamma rays caused by changes in ambient temperature.

[0035] Further: the compensation parameters a, b, c, d are all obtained by fitting and calculating the data collected by performing high and low temperature cycle tests on the material level meter, the number of cycle collection is at least 5000 times but not more than 80000 times, and the collected data is iterated, cleaned, and then polynomial fitting is used to obtain the compensation parameters;

[0036] Different level meters have different counting rate change trends due to factors such as temperature. It is necessary to conduct separate tests on different types of level meters to determine the compensation parameters of the same type of level meters.

[0037] The present invention also provides a device for correcting the measurement error of a material level meter based on temperature compensation, comprising: a crystal;

[0038] One end of the crystal is an electronic component, and the other end is equipped with a temperature measuring platinum resistor;

[0039] The temperature measuring platinum resistor is connected to the temperature transmitter in the electrical box through a heat conduction path fixed to the electrical box;

[0040] The temperature transmitter feeds back the measured ambient temperature data to the electronic component.

[0041] Further: the electronic component includes: a single chip microcomputer, an analog signal input interface, an analog-to-digital converter and a temperature sensor;

[0042] The single chip microcomputer receives the ambient temperature data fed back from the analog signal input interface and the analog-to-digital converter;

[0043] The single chip microcomputer also receives electronic component temperature data directly fed back from the temperature sensor;

[0044] The single chip computer also includes the steps of a method for correcting the measurement error of the material level meter based on temperature compensation as described above.

[0045] The invention has the beneficial effect of reducing the measurement error of the material level meter caused by the influence of temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the embodiments of the present invention and the technical solutions in the prior art, the drawings required for use in the embodiments and the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some implementation methods recorded in the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0047] Figure 1 is a flow chart of the method of the present invention;

[0048] Figure 2 It is a schematic diagram of the connection of the temperature measuring components of the device for correcting the measurement error of the material level meter with temperature compensation of the present invention;

[0049] Figure 3 It is a schematic diagram of the external components of the device for correcting the measurement error of a material level meter with temperature compensation according to the present invention;

[0050] Figure 4 This is a comparison diagram of the count rate before and after compensation according to a specific embodiment of the present invention. DETAILED DESCRIPTION

[0051] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application is described and illustrated below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present application and are not intended to limit the present application. Based on the embodiments provided in the present application, all other embodiments obtained by ordinary technicians in the field without making creative work are within the scope of protection of the present application.

[0052] Obviously, the drawings described below are only some examples or embodiments of the present application. For ordinary technicians in this field, the present application can be applied to other similar scenarios based on these drawings without any creative work.

[0053] In addition, it can be understood that although the efforts made in this development process may be complex and lengthy, for ordinary technicians in the field related to the contents disclosed in this application, some design, manufacturing or production changes based on the technical contents disclosed in this application are just conventional technical means and should not be understood as the contents disclosed in this application are insufficient.

[0054] If not otherwise specified, all embodiments and optional embodiments of the present application can be combined with each other to form a new technical solution.

[0055] See also Figure 1 , the method flow chart of the present invention comprises the following steps:

[0056] S1: Install at least one temperature measuring platinum resistor at one end of the crystal of the level meter that is not connected to the electronic components, and the temperature measuring platinum resistor is connected to the temperature transmitter in the electrical box;

[0057] S2: Install at least one temperature sensor inside the electronic component of the level meter;

[0058] S3: The feedback data of the temperature sensor and the temperature measuring platinum resistor are T1 and T2 respectively, and both are fed back to the single chip microcomputer;

[0059] S4: Use T1 and T2 to compensate and correct the counting rate measured by the electronic components of the level meter.

[0060] Specifically:

[0061] There are two specific factors that cause the offset error of the counting rate measurement: one is the influence of the carrier concentration from low to high during the process of the electronic components from cold startup to thermal equilibrium on the counting rate N; the other is that the temperature affects the sensitivity of the crystal to gamma rays, which in turn affects the counting rate N. Therefore, two compensation factors are proposed to compensate the counting rate of the level meter, as shown in the following formula:

[0062] Nc=N*(a*T1+b)*(c*T2+d);

[0063] Wherein, (a*T1+b) is the compensation factor for compensating the effect of the electronic components on the count rate N during the process from cold startup to reaching thermal equilibrium;

[0064] (c*T2+d) is the compensation factor for compensating the change in crystal sensitivity to gamma rays caused by changes in ambient temperature, which affects the counting rate N.

[0065] Nc is the compensated counting rate;

[0066] N is the count rate measured by the electronic component in real time;

[0067] T1 is the temperature of the electronic components fed back by the temperature sensor;

[0068] T2 is the ambient temperature fed back by the temperature measuring platinum resistor;

[0069] a, b, c, and d are all compensation parameters;

[0070] Among them, the compensation factors (a*T1+b) and (c*T2+d) also need to be limited;

[0071] The compensation factor (a*T1+b) is mainly adjusted according to the equipment working environment and the thermal balance state of the system;

[0072] Therefore, the electronic component temperature T1 in the compensation factor (a*T1+b) is adjusted by the limit parameters TH1, TL1 and the ambient temperature T2 measured in real time;

[0073] TH1 is the maximum operating temperature of the electronic components recorded;

[0074] The TL1 is the recorded minimum operating temperature of the electronic component;

[0075] According to the thermal balance theory, when T1>TH1, T1=T2+E, that is, T2+E replaces the original T1. The electronic components are subject to the real-time measured external temperature and internal temperature to achieve thermal balance, and are also affected by the temperature rise E of the electronic components themselves;

[0076] When TH1≥T1≥TL1, take T1, which changes with the measured temperature of the electronic component;

[0077] When TL1>T1, take T1=TL1, that is, TL1 replaces the original T1;

[0078] Among them, T1 is the temperature of the electronic component detected in real time, which is a non-constant number;

[0079] The compensation factor (c*T2+d) is the compensation for the crystal sensitivity, due to its installation position such as Figure 3 As shown, it is less affected by the temperature of electronic components, and is mainly affected by the ambient temperature. Therefore, the ambient temperature T2 in the compensation factor (c*T2+d) is also adjusted by the limiting parameters TH2 and TL2.

[0080] TH2 is the maximum temperature of the equipment working environment recorded;

[0081] TL2 is the lowest temperature of the equipment working environment recorded;

[0082] When T2≥TH2, take T2=TH2, that is, TH2 replaces the original T2;

[0083] When TH2≥T2≥TL2, take T2, which changes with the actual ambient temperature value measured;

[0084] When TL2>T2, take T2=TL2, that is, TL2 replaces the original T2;

[0085] Among them, T2 is the ambient temperature detected in real time, which is also a non-constant number;

[0086] Among them, different level meters have different counting rate change trends affected by factors such as temperature. It is necessary to conduct separate tests on different types of level meters to determine the compensation parameters of the same type of level meters. The compensation parameters a, b, c, and d are all obtained by fitting and calculating the data collected by the high and low temperature cycle test of the level meter. The number of cycle collection is at least 5,000 times but not more than 80,000 times. The collected data is iterated and cleaned, and then polynomial fitting is used to obtain the compensation parameters;

[0087] A specific embodiment provided by the present invention is shown in Table 1 below:

[0088] Table 1

[0089]

[0090]

[0091] Iterate and clean the large sample data, extract the count rate N of several sample data of the material level meter with high data similarity after cold startup to complete thermal equilibrium, as well as the current test electronic component temperature T1 and test environment temperature T2 corresponding to the sample data. Since it is a test, the parameters limiting T1 and T2 are not set here, and the current electronic component temperature T1 and test environment temperature T2 are directly used as the limiting conditions; NA is the count rate calibrated by this material level meter, that is, the best count rate that can be achieved in theory; take the N, NA and T2 pairs (c*T2+ d) Perform the first fitting, specifically NA=N(c*T2+d), c and d are both the median of the fitting results of c and d, thus c and d can be obtained, c=-0.020, d=2.011 in this embodiment; then the obtained c, d and known T1, T2, NA, N are fitted again, specifically: NA=N(a*T1+b)*(-0.0195*T2+2.011) are fitted again, a and b are solved, and the median of the fitting results of a and b is also taken, a=0.062, b=-0.725 in this embodiment.

[0092] See also Figure 2-3 , which is a schematic diagram of the connection of the temperature measuring components of the device for correcting the measurement error of the material level meter with temperature compensation of the present invention and a schematic diagram of the external components of the device for correcting the measurement error of the material level meter with temperature compensation;

[0093] It includes a crystal; one end of the crystal is an electronic component, and the other end is equipped with a temperature measuring platinum resistor; the temperature measuring platinum resistor is fixedly connected with the crystal through a structure to form a heat conduction path, measures the temperature data that changes with the working environment of the crystal in real time, and is connected to a temperature transmitter in an electrical box; the temperature transmitter feeds back the measured ambient temperature data to the electronic component.

[0094] Specifically:

[0095] The electronic components include: a single chip microcomputer, an analog signal input interface, an analog-to-digital converter and a temperature sensor;

[0096] The temperature transmitter feeds back the ambient temperature data measured by the platinum resistor to the single-chip microcomputer through the analog signal input interface and the analog-to-digital converter; the single-chip microcomputer also receives the temperature data of the electronic components directly fed back from the temperature sensor; the single-chip microcomputer also includes the steps of a method for correcting the measurement error of the level meter based on temperature compensation as mentioned above, that is, the counting rate compensation program in the single-chip microcomputer.

[0097] See also Figure 4, is a comparison of the count rate before and after compensation of a specific embodiment of the present invention, wherein the horizontal axis represents the data of several samplings experienced by the electronic component from cold startup to stable state (where 1 represents the first sampling, 1622 represents the 1622nd sampling, and so on), each sampling point includes the currently sampled electronic component temperature T1 and ambient temperature T2, and the electronic component temperature T1 and ambient temperature T2 change with the sampling time; the vertical axis represents its count rate, N is a schematic diagram of the count rate curve before compensation, and Nc is a schematic diagram of the count rate curve after compensation. It can be clearly seen that its count rate is effectively compensated and stable at any time point from the cold startup of the electronic component to the stable state.

[0098] The above is a very detailed description of one or more embodiments of the present invention, but the content is only a specific example of the present invention and cannot be considered to limit the scope of application of the present invention. Any other methods and changes proposed based on the content of the present invention should fall within the scope of patent protection of the present invention.

Claims

1. A method for correcting the measurement error of a material level meter based on temperature compensation, characterized in that: The steps include: S1: Install at least one temperature measuring platinum resistor at one end of the crystal of the level meter that is not connected to the electronic components, and the temperature measuring platinum resistor is connected to the temperature transmitter in the electrical box; S2: Install at least one temperature sensor inside the electronic component of the level meter; S3: The feedback data of the temperature sensor and the temperature measuring platinum resistor are T1 and T2 respectively, and both are fed back to the single chip microcomputer; S4: Use T1 and T2 to compensate and correct the counting rate measured by the electronic components of the level meter.

2. A method for correcting the measurement error of a material level meter based on temperature compensation according to claim 1, characterized in that: The compensation correction in S4 is implemented by the count rate compensation program contained in the single chip microcomputer, and the compensation formula is as follows: Nc=N*(a*T1+b)*(c*T2+d); Wherein, (a*T1+b) is the compensation factor for compensating the effect of the electronic components on the count rate N during the process from cold startup to reaching thermal equilibrium; (c*T2+d) is the compensation factor for compensating the change in crystal sensitivity to gamma rays caused by changes in ambient temperature, which affects the counting rate N. Nc is the count rate after compensation; N is the count rate measured by the electronic component in real time; T1 is the temperature of the electronic components fed back by the temperature sensor; T2 is the ambient temperature fed back by the temperature measuring platinum resistor; a, b, c, and d are all compensation parameters.

3. A method for correcting the measurement error of a material level meter based on temperature compensation according to claim 2, characterized in that: The electronic component temperature T1 in the compensation factor (a*T1+b) is adjusted by the limiting parameters TH1 and TL1; TH1 is the maximum operating temperature of the electronic components recorded; The TL1 is the recorded minimum operating temperature of the electronic component; When T1>TH1, take T1=T2+E, that is, T2+E replaces the original T1, where E is the temperature rise; When TH1≥T1≥TL1, take T1, which changes with the measured temperature of the electronic component; When TL1>T1, T1=TL1, that is, TL1 replaces the original T1.

4. The method for correcting the measurement error of a material level meter based on temperature compensation according to claim 2 is characterized in that: The ambient temperature T2 in the compensation factor (c*T2+d)) is adjusted by the limiting parameters TH2 and TL2; TH2 is the maximum temperature of the equipment working environment recorded; The TL2 is the lowest temperature of the equipment working environment recorded; When T2≥TH2, take T2=TH2, that is, TH2 replaces the original T2; When TH2≥T2≥TL2, take T2, which changes with the actual ambient temperature value measured; When TL2>T2, T2=TL2, that is, TL2 replaces the original T2.

5. The method for correcting the measurement error of a material level meter based on temperature compensation according to claim 2, characterized in that: The compensation parameters a, b, c, and d are all obtained by fitting and calculating the data collected by performing high and low temperature cycle tests on the level meter. The number of cycle collection is at least 5,000 times but not more than 80,000 times. The collected data is iterated and cleaned, and then polynomial fitting is used to obtain the compensation parameters.

6. A device for correcting the measurement error of a material level meter based on temperature compensation, characterized in that: include: Crystals; One end of the crystal is an electronic component, and the other end is equipped with a temperature measuring platinum resistor; The temperature measuring platinum resistor is connected to the temperature transmitter in the electrical box through a heat conduction path fixed to the electrical box; The temperature transmitter feeds back the measured ambient temperature data to the electronic component.

7. The device for correcting the measurement error of a material level meter based on temperature compensation according to claim 6, characterized in that: The electronic component includes: a single chip microcomputer, an analog signal input interface, an analog-to-digital converter and a temperature sensor; The single chip microcomputer receives the ambient temperature data fed back from the analog signal input interface and the analog-to-digital converter; The single chip microcomputer also receives electronic component temperature data directly fed back from the temperature sensor; The single chip computer also includes the steps of a method for correcting the measurement error of a level meter based on temperature compensation as described in any one of claims 2 to 5.

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