Mask for oleds and method for manufacturing mask for oleds

Abstract

The present invention relates to a mask for an OLED and a method for manufacturing a mask for an OLED, and more particularly, to a mask for an OLED and a method for manufacturing a mask for an OLED capable of manufacturing a mask for an OLED having enhanced rigidity and elasticity so as to be reusable, and a mask for an OLED. The manufacturing method of the mask for the OLED comprises the following steps: providing a substrate; forming a thin film on the first surface of the substrate; forming a photosensitive film on the upper surface of the thin film; forming a pattern on the photosensitive film; a step of etching the thin film and a part of the upper surface of the substrate corresponding to the pattern; a step of removing the photosensitive film; a step of etching the second surface of the substrate to form a pattern hole corresponding to the pattern; and forming a metal film on the upper surface of the thin film.

Description

Technical Field

[0001] The present invention relates to an OLED mask and a method for manufacturing the OLED mask, and more particularly to an OLED mask capable of manufacturing an OLED mask having enhanced rigidity and elasticity so as to be reusable and a method for manufacturing the OLED mask. Background Art

[0002] OLED (Organic Light-Emitting Diode) is an organic light-emitting diode that uses organic compounds to generate light. Such organic compounds can emit light when electricity flows through each pixel. Unlike plasma displays or LCD (Liquid Crystal Display), OLED displays do not require a backlight or LED backlight, and individual pixels emit light directly, so they can provide high contrast and wide viewing angles.

[0003] Such OLED manufacturing includes various steps such as substrate manufacturing, transparent electrode pattern manufacturing, organic light-emitting material layer evaporation, electrode pattern manufacturing and protective layer attachment.

[0004] The organic light-emitting material layer is deposited by evaporating the core of OLED, the organic light-emitting material layer, on the pixel of TFT (Thinfilm transistor). Such an organic light-emitting material layer plays the role of emitting light, and various organic compounds are used to present various colors.

[0005] In order to vapor-deposit the aforementioned organic light-emitting material layer, a FM (Fine mask) or FMM (Fine metal mask) is used, and a metal plate with fine holes is formed in such a mask. That is, the organic matter is heated at the vapor deposition source, and the heated organic matter sublimates, and the green, red, blue and other organic light-emitting materials are accurately vapor-deposited through the holes of the mask located above and arranged in the OLED sub-pixels.

[0006] Among them, FM is a silicon-based mask. According to previous technologies, it is not made of metal. The characteristics of metal, namely low rigidity and elasticity, make it easy to be damaged during the cleaning process and cannot be reused. Summary of the invention

[0007] An object of the present invention is to solve the above-mentioned problems and to provide an OLED mask and a method for manufacturing an OLED mask by providing rigidity and elasticity to a silicon-based mask and preventing damage during cleaning so that the mask can be reused.

[0008] The object of the present invention as described above can be achieved by a mask manufacturing method for OLED, which includes: a step of providing a substrate; a step of forming a thin film on a first surface of the substrate; a step of forming a photosensitive film on the thin film; a step of forming a pattern on the photosensitive film; a step of etching the thin film and a portion of the top of the substrate corresponding to the pattern; a step of removing the photosensitive film; a step of etching the second surface of the substrate to form a pattern hole corresponding to the pattern; and a step of forming a metal film on the thin film.

[0009] In this case, the substrate may be produced from silicon.

[0010] Furthermore, the step of etching the thin film and a portion of the upper surface of the substrate may be performed by dry etching.

[0011] In addition, the step of etching the film and a portion of the top of the substrate may correspond to the pattern etching of the film and the top of the substrate to form a pattern recessed portion, and the pattern recessed portion is formed in the form of penetrating the film and digging out the top of the substrate at a predetermined depth.

[0012] In addition, when etching the second surface of the substrate, wet etching may be performed.

[0013] On the other hand, the step of etching the film and a portion of the top of the substrate may correspond to the pattern etching of the film and the top of the substrate to form a pattern recessed portion, the pattern recessed portion is formed in the form of penetrating the film and digging out the top of the substrate to a predetermined depth, and in the step of etching the pattern hole, the etching amount is adjusted so that the pattern recessed portion is exposed, and the pattern hole penetrates the film and the substrate.

[0014] Furthermore, the metal film may be composed of any one selected from beryllium, iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide and platinum, or an alloy of two or more thereof.

[0015] In addition, the metal film may be composed of beryllium, or an alloy of beryllium and at least one selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum.

[0016] On the other hand, the thin film may be composed of silicon nitride (Si3N4) or silicon oxide (SiO2).

[0017] Furthermore, the above-mentioned object of the present invention can be achieved by an OLED mask including: a substrate made of silicon; a thin film provided on the substrate and forming pattern holes; and a metal film provided on the thin film.

[0018] Here, the metal film may be made of beryllium, or an alloy of beryllium and at least one selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum.

[0019] According to the present invention having the above-mentioned structure, a metal layer is formed on a silicon-based mask to impart rigidity and elasticity, and the mask is prevented from being damaged during cleaning, thereby being reusable. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 is a diagram showing the steps of forming a thin film and a photosensitive film on a first surface of a substrate according to an embodiment of the present invention,

[0021] Figure 2 is a diagram showing the steps of forming a pattern on a photosensitive film,

[0022] Figure 3 It is shown in Figure 2 A diagram showing a state in which a thin film and a portion of a substrate are etched according to a pattern,

[0023] Figure 4 It is shown in Figure 3 A diagram of a mask for an OLED according to the prior art, in which a photosensitive film is removed and the second surface of the substrate is etched,

[0024] Figure 5 It is shown that according to the present invention, Figure 4 A mask for forming a metal layer of an OLED is shown in FIG.

[0025] Figure 6 It is shown Figure 5 A plan view of a mask for an OLED shown in FIG.

[0026] (Explanation of Reference Numerals)

[0027] 100: Substrate

[0028] 110: Depression

[0029] 200: film

[0030] 300: Photosensitive film

[0031] 310: Pattern

[0032] 400: Metal film

[0033] 510: Pattern recess

[0034] 610: Pattern hole

[0035] 800: Mask for OLED DETAILED DESCRIPTION

[0036] The following is a detailed description of the method for manufacturing an OLED (Organic Light-Emitting Diode) mask according to an embodiment of the present invention with reference to the accompanying drawings. It is first clarified that the OLED mask used in this specification corresponds to the FM (Fine Mask) used for evaporating the organic light-emitting material layer in the OLED manufacturing step.

[0037] According to an embodiment of the present invention, a method for manufacturing a mask for an OLED may include: providing a substrate 100; forming a thin film 200 on an upper surface 101 of the substrate 100; forming a photosensitive film 300 on an upper surface 201 of the thin film 200; forming a pattern 310 on the photosensitive film 300; etching the thin film 200 and a portion of the substrate 100 corresponding to the pattern 310; etching the lower surface 102 of the substrate 100 to form a pattern hole 610 corresponding to the pattern 310; and forming a metal film 400 on the thin film 200.

[0038] Figure 1 1 is a diagram showing a step of forming a thin film 200 and a photosensitive film 300 on the upper surface 101 or the first surface of the substrate 100 according to an embodiment of the present invention.

[0039] First, if Figure 1 As shown in (A), the substrate 100 is provided. The substrate 100 may have a first surface 101 and a second surface 102 located opposite to the first surface 101. For example, the first surface 101 may correspond to the upper surface of the substrate 100, and the second surface 102 may correspond to the lower surface of the substrate 100. Here, the substrate 100 may be made of silicon.

[0040] Then, if Figure 1 As shown in (B), a thin film 200 is formed on the upper surface 101 of the substrate 100 .

[0041] The thin film 200 can be formed on the upper surface 101 of the substrate 100 by evaporation or other methods with a thickness of approximately 1 μm to 9 μm. In this case, the thin film 200 can be made of, for example, silicon nitride (Si3N4) or silicon oxide (SiO2). However, this structure is only an example and is not limited thereto.

[0042] Next, a photoresist film 300 may be formed on the upper surface 201 of the thin film 200 , and a pattern 310 may be formed on the photoresist film 300 . Figure 2 FIG. 1 is a diagram showing a state where the pattern 310 is formed on the photosensitive film 300 .

[0043] Reference Figure 2 The method for forming the pattern 310 manufactures a mask (not shown) for accurately configuring sub-pixels of each color in consideration of the pixel structure of the OLED display, and such a mask is disposed above the photosensitive film 300 and irradiated with UV (ultra violet) light to form the pattern 310.

[0044] on the other hand, Figure 3 It is shown in Figure 2 FIG. 1 is a diagram showing a state in which a portion of the thin film 200 and the substrate 100 are etched.

[0045] like Figure 2 as well as Figure 3 As shown, after the pattern 310 is formed on the photosensitive film 300, the thin film 200 and the upper surface 101 of the substrate 100 are etched corresponding to the pattern 310 to form a pattern recess 510. The upper surface 101 of the substrate 100 can be etched with a predetermined thickness. The etching step can be performed, for example, by dry etching, but is not limited thereto.

[0046] exist Figure 3 In the state, after the photosensitive film 300 is removed by using a solvent or the like, the bottom surface 102 of the substrate 100 is etched. Figure 4 It is shown in Figure 3 FIG. 1 is a diagram showing a state in which the lower surface 102 of the substrate 100 is etched.

[0047] Reference Figure 4 , the bottom surface 102 of the substrate 100 may be wet-etched using, for example, a KOH solution. Thus, when etching the bottom surface 102 of the substrate 100, the etching amount may be adjusted so that the pattern recessed portion 510 formed on the top surface 101 of the substrate 100 is exposed. Figure 4 As shown, a pattern hole 610 penetrating the film 200 and the substrate 100 is formed.

[0048] The OLED mask 800 manufactured through the above process is manufactured by forming a thin film on a silicon-based substrate 100. Therefore, it has a very soft property, but lacks appropriate rigidity and elasticity. Therefore, if such an OLED mask 800 is used in a process and then cleaned, it will be damaged or damaged and cannot be used again. The purpose of the present invention is to provide a method for manufacturing an OLED mask 800' that solves such a problem and can be reused.

[0049] Figure 5 FIG. 8 is a side view showing an OLED mask 800 ′ manufactured according to the manufacturing method of the present invention.

[0050] Reference Figure 5 In the manufacturing method according to the present invention, a metal film 400 can be formed on the thin film 200 in the mask manufactured by the aforementioned process. Such a metal film 400 can be formed with a thickness of approximately 1 μm to 9 μm, and can be formed by CVD (Chemical vapor deposition), sputtering, electron beam (e-beam), etc., without particular limitation.

[0051] The metal film 400 may be made of any one selected from beryllium, iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide and platinum, or an alloy of two or more thereof. Preferably, the metal film 400 is made of beryllium, or an alloy of beryllium and any one or more selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide and platinum.

[0052] Here, if we look at the physical properties of beryllium, its specific gravity is about 0.7 times that of aluminum and about 0.23 times that of iron. Its rigidity is more than 50% higher than that of steel, and it is lighter and harder than titanium. In addition, when beryllium is used, it can be reused by washing due to the characteristics of the material. Furthermore, due to its light weight, it can also prevent the phenomenon of pattern destruction due to sagging of the mask.

[0053] As described above, when the metal film 400 is formed on the thin film 200, the metal film 400 can impart appropriate rigidity and elasticity to the OLED mask 800'. Thus, when the OLED mask 800' is cleaned, breakage and damage can be prevented, and the OLED mask 800' can be reused.

[0054] Figure 6FIG. 8 is a plan view showing a mask 800 ′ for an OLED completed according to the present invention.

[0055] like Figure 5 as well as Figure 6 As shown, the OLED mask 800' may include a substrate 100 made of silicon, a film 200 disposed on the substrate 100 and having pattern holes 610 formed thereon, and a metal film 400 disposed on the film 200. Holes corresponding to the pattern holes 610 may also be formed in the metal film 400.

[0056] In addition, the metal film 400 is made of beryllium, or an alloy of beryllium and at least one selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum.

[0057] The above description is made with reference to the preferred embodiments of the present invention, and those skilled in the art can make various modifications and changes to the present invention without departing from the concept and scope of the present invention as described in the attached claims. Therefore, if the implementation of the modification basically includes the constituent elements of the claims of the present invention, it should be deemed to be included in the technical scope of the present invention.

Claims

1. A method for manufacturing a mask for OLED, characterized in that: include: providing a substrate; A step of forming a thin film on a first surface of the substrate; The step of forming a photosensitive film on the film; The step of forming a pattern on the photosensitive film; A step of etching the thin film and a portion of an upper surface of the substrate corresponding to the pattern; A step of removing the photosensitive film; A step of etching the second surface of the substrate to form pattern holes corresponding to the pattern; as well as The step of forming a metal film on the thin film.

2. The method for manufacturing an OLED mask according to claim 1, wherein: The substrate is made of silicon.

3. The method for manufacturing an OLED mask according to claim 1, wherein: The step of etching the thin film and a portion of the upper surface of the substrate is performed by dry etching.

4. The method for manufacturing an OLED mask according to claim 3, characterized in that: The step of etching a portion of the thin film and the upper surface of the substrate is to form a pattern recessed portion by etching the thin film and the upper surface of the substrate in accordance with the pattern. The pattern recessed portion is formed in a form of penetrating the thin film and digging out the upper surface of the substrate at a predetermined depth.

5. The method for manufacturing an OLED mask according to claim 1, wherein: When etching the second side of the substrate, wet etching is performed.

6. The method for manufacturing an OLED mask according to claim 5, characterized in that: The step of etching a portion of the thin film and the upper surface of the substrate is to form a pattern recessed portion by etching the thin film and the upper surface of the substrate in accordance with the pattern. The pattern recessed portion is formed in a form that penetrates the film and digs out the upper surface of the substrate at a predetermined depth. In the step of etching the pattern holes, an etching amount is adjusted so that the pattern recessed portion is exposed, and the pattern holes penetrate the thin film and the substrate.

7. The method for manufacturing an OLED mask according to claim 1, wherein: The metal film is composed of any one selected from beryllium, iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide and platinum, or an alloy of two or more thereof.

8. The method for manufacturing an OLED mask according to claim 1, wherein: The metal film is made of beryllium, or an alloy of the beryllium and at least one selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum.

9. The method for manufacturing an OLED mask according to claim 1, wherein: The thin film is made of silicon nitride or silicon oxide.

10. A mask for OLED, characterized in that: have: A substrate made of silicon; A thin film disposed on the substrate and forming pattern holes; and A metal film is disposed on the upper surface of the thin film.

11. The OLED mask according to claim 10, characterized in that: The metal film is made of beryllium, or an alloy of the beryllium and at least one selected from iron, nickel, chromium, tungsten, cobalt, molybdenum, tin, zinc-titanium, aluminum, tungsten carbide, and platinum.

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