Stacking method of three-dimensional memristor and bonding method of semiconductor device

Abstract

The invention provides a stacking method of a three-dimensional memristor and a bonding method of a semiconductor device, and the stacking method comprises the steps: providing a first substrate which is provided with a first semiconductor composite layer; forming a memristor layer to cover the first semiconductor composite layer; providing a second substrate, wherein a second semiconductor composite layer is arranged on the second substrate; forming a bonding layer to cover the second semiconductor composite layer, wherein the bonding layer comprises an exposed silicon oxide layer; hydroxylation processing is carried out on the surfaces of the memristor layer and the silicon oxide layer; and carrying out thermocompression bonding on the memristor layer and the silicon oxide layer to enable the first semiconductor composite layer and the second semiconductor composite layer to be stacked and connected. According to the invention, the process difficulty of preparing the three-dimensional memristor can be reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of integrated circuit manufacturing, and in particular to a stacking method of three-dimensional memristors and a bonding method of semiconductor devices. Background Art

[0002] Three-dimensional memristor is a high-density storage device that uses a vertical stacking structure similar to 3D NAND Flash to improve storage density using three-dimensional space. It is an important development direction for on-chip storage. Each storage unit of a three-dimensional memristor can store multiple states, which can further improve storage density. Moreover, due to its special device characteristics, memristors have great advantages in the hardware implementation of artificial neural networks. With the rapid development of artificial intelligence technology and applications, three-dimensional memristors are also attracting more and more attention.

[0003] Among them, the most basic structural unit in the memristor is the memristor unit, and the structure of the memristor unit is relatively simple, including a memristor layer and electrode layers arranged on both sides of the memristor layer, but the structure of the three-dimensional memristor integrated by the above-mentioned memristor unit and other circuit units is relatively complex. The preparation method of the three-dimensional memristor is usually to prepare each film layer and each unit structure (i.e., film layer structure) layer by layer from bottom to top on a substrate, thereby stacking to form the above-mentioned three-dimensional memristor. Therefore, the preparation method of the three-dimensional memristor is relatively cumbersome and has considerable process difficulty, especially the high-performance three-dimensional memristor has a higher degree of structural complexity, and it is basically difficult to prepare a high-performance three-dimensional memristor using the above-mentioned method. Summary of the invention

[0004] The object of the present invention is to provide a stacking method of a three-dimensional memristor and a bonding method of a semiconductor device, so as to reduce the process difficulty of preparing the three-dimensional memristor.

[0005] In order to solve the above technical problems, the present invention provides a three-dimensional memristor stacking method, comprising:

[0006] Providing a first substrate, on which a first semiconductor composite layer is disposed;

[0007] forming a memristor layer to cover the first semiconductor composite layer;

[0008] providing a second substrate on which a second semiconductor composite layer is disposed;

[0009] forming an adhesive layer to cover the second semiconductor composite layer, wherein the adhesive layer comprises an exposed silicon oxide layer;

[0010] Performing hydroxylation treatment on the surfaces of the memristor layer and the silicon oxide layer;

[0011] The memristor layer and the silicon oxide layer are thermally pressed and bonded to make the first semiconductor composite layer and the second semiconductor composite layer stacked and connected.

[0012] Optionally, the memristive layer includes hafnium oxide, aluminum oxide, titanium oxide or titanium oxynitride.

[0013] Optionally, the flatness of the surface of the first semiconductor composite layer is better than the flatness of the surface of the second semiconductor composite layer.

[0014] Optionally, the step of hydroxylation treatment comprises:

[0015] The surfaces of the memristor layer and the silicon oxide layer are cleaned with a mixture of ammonia water and hydrogen peroxide, and / or,

[0016] performing a plasma activation treatment including hydrogen plasma and oxygen plasma on the surfaces of the memristor layer and the silicon oxide layer, and / or

[0017] The memristor layer and the silicon oxide layer are soaked in a weak alkaline solution.

[0018] Optionally, the step of performing thermocompression bonding on the memristor layer and the silicon oxide layer includes:

[0019] Aligning the memristor layer and the silicon oxide layer face to face;

[0020] performing a first hot pressing on the first substrate and the second substrate;

[0021] The first substrate and the second substrate after hot pressing are annealed to stack and connect the first semiconductor composite layer and the second semiconductor composite layer, and the annealing temperature is higher than the hot pressing temperature of the first hot pressing.

[0022] Optionally, the hot pressing temperature of the first hot pressing is 30° C. to 250° C., the hot pressing time is 5 minutes to 90 minutes, and the hot pressing pressure is 0.5 MPa to 2.5 MPa.

[0023] Optionally, the annealing treatment is furnace tube annealing, the annealing temperature of the annealing treatment is 150° C. to 400° C., and the annealing time is 30 minutes to 120 minutes.

[0024] Optionally, the annealing process is performed in a vacuum environment.

[0025] Optionally, the step of performing thermocompression bonding on the memristor layer and the silicon oxide layer includes:

[0026] Aligning the memristor layer and the silicon oxide layer face to face;

[0027] The first substrate and the second substrate are subjected to a second hot pressing so that the first semiconductor composite layer is stacked and connected with the second semiconductor composite layer, the hot pressing temperature of the second hot pressing is greater than the hot pressing temperature of the first hot pressing, and the hot pressing time of the second hot pressing is greater than the hot pressing time of the first hot pressing.

[0028] According to another aspect of the present invention, a bonding method for a semiconductor device is also provided, comprising:

[0029] Providing a first substrate, on which a first semiconductor composite layer is disposed;

[0030] forming a high dielectric constant dielectric layer to cover the first semiconductor composite layer;

[0031] providing a second substrate on which a second semiconductor composite layer is disposed;

[0032] forming a silicon oxide layer to cover the second semiconductor composite layer;

[0033] Performing hydroxylation treatment on the surfaces of the high dielectric constant dielectric layer and the silicon oxide layer;

[0034] The high dielectric constant medium layer and the silicon oxide layer are thermally pressed and bonded to bond the first semiconductor composite layer to the second semiconductor composite layer.

[0035] In summary, the stacking method of a three-dimensional memristor provided by the present invention includes: providing a first substrate, on which a first semiconductor composite layer is provided; forming a memristor layer to cover the first semiconductor composite layer; providing a second substrate, on which a second semiconductor composite layer is provided; forming an adhesive layer to cover the second semiconductor composite layer, the adhesive layer including an exposed silicon oxide layer; performing a hydroxylation treatment on the surface of the memristor layer and the silicon oxide layer; performing hot pressing bonding on the memristor layer and the silicon oxide layer, so that the first semiconductor composite layer and the second semiconductor composite layer are stacked and connected. Compared with sequentially forming each film layer structure from bottom to top on a substrate to prepare a three-dimensional memristor, in the present invention, the three-dimensional memristor to be prepared is split into two parts along the thickness direction with one of the memristor units as the center, and one part is formed on the first substrate and the second substrate respectively. In other words, the first semiconductor composite layer is formed on the first substrate, and the second semiconductor composite layer is formed on the second substrate, so that the complexity of the prepared structure is reduced and the process difficulty during preparation is reduced, and then the first semiconductor composite layer and the second semiconductor composite layer are bonded and connected to stack into a three-dimensional memristor, thereby reducing the process difficulty of preparing the three-dimensional memristor and simplifying its preparation process. Moreover, considering that the memristive layer on the surface of the first semiconductor composite layer is difficult to be directly bonded to the surface (electrode layer) of the second semiconductor composite layer, the present invention also forms an adhesive layer (including an exposed silicon oxide layer) on the surface of the second semiconductor composite layer before connecting the first substrate and the second substrate, performs hydroxylation treatment on the surfaces of the memristive layer and the adhesive layer so that hydroxyl groups are suspended on their surfaces, and then performs hot-press bonding on the memristive layer and the silicon oxide layer so that the hydroxyl groups on the surfaces of the memristive layer and the silicon oxide layer are condensed and dehydrated to form a stable chemical bond connection. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] Those skilled in the art should understand that the drawings are provided for a better understanding of the present invention, but do not constitute any limitation on the scope of the present invention.

[0037] Figure 1 It is a flow chart of a stacking method of three-dimensional memristors provided in one embodiment of the present invention.

[0038] Figure 2 The figure is a flow chart of a semiconductor device bonding method provided by one embodiment of the present invention. DETAILED DESCRIPTION

[0039] In order to make the purpose, advantages and features of the present invention clearer, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be noted that the drawings are all in a very simplified form and are not drawn to scale, and are only used to conveniently and clearly assist in explaining the purpose of the embodiments of the present invention. In addition, the structure shown in the drawings is often a part of the actual structure. In particular, the emphasis of each drawing is different, and sometimes different scales are used.

[0040] As used in the present invention, the singular forms "one", "an", and "the" include plural objects, the term "or" is usually used to include the meaning of "and / or", the term "several" is usually used to include the meaning of "at least one", and the term "at least two" is usually used to include the meaning of "two or more". In addition, the terms "first", "second", and "third" are used only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined as "first", "second", and "third" may explicitly or implicitly include one or at least two of the features, unless the content clearly indicates otherwise.

[0041] An embodiment of the present invention provides a three-dimensional memristor stacking method.

[0042] Figure 1 4 is a flow chart of the stacking method of the three-dimensional memristor provided in this embodiment.

[0043] like Figure 1 As shown, the stacking method of the three-dimensional memristor provided in this embodiment includes:

[0044] S01: providing a first substrate, on which a first semiconductor composite layer is provided;

[0045] S02: forming a memristor layer covering the first semiconductor composite layer;

[0046] S03: providing a second substrate, on which a second semiconductor composite layer is disposed;

[0047] S04: forming an adhesive layer to cover the second semiconductor composite layer, wherein the adhesive layer includes an exposed silicon oxide layer;

[0048] S05: performing hydroxylation treatment on the surfaces of the memristor layer and the silicon oxide layer;

[0049] S06: performing thermocompression bonding on the memristor layer and the silicon oxide layer, so that the first semiconductor composite layer and the second semiconductor composite layer are stacked and connected.

[0050] First, step S01 is performed to provide a first substrate on which a first semiconductor composite layer is disposed.

[0051] The first substrate may be any suitable semiconductor substrate, and a first semiconductor composite layer is formed on the first substrate, and the first semiconductor composite layer may be a partial film layer structure of the three-dimensional memristor to be prepared. Compared with forming each film layer structure from bottom to top on a substrate to prepare a three-dimensional memristor, in this embodiment, the three-dimensional memristor to be prepared is divided (split) into at least two mutually connected parts along its thickness direction, such as a first semiconductor composite layer, a second semiconductor composite layer ... an nth semiconductor composite layer (n is greater than or equal to 2), and the above-mentioned first to nth semiconductor composite layers are respectively formed, and then they are bonded and stacked in sequence to prepare a three-dimensional memristor.

[0052] In this embodiment, the three-dimensional memristor is split into two parts (a first semiconductor composite layer and a second semiconductor composite layer) along the thickness direction with one of the memristor units as the center. Specifically, the memristor unit may include a memristor layer and two electrode layers (a first electrode and a second electrode) each disposed on one side of the memristor layer, the first semiconductor composite layer includes a film layer structure (including the first electrode) on one side of the first electrode, and the second semiconductor composite layer includes a film layer structure (including the second electrode) on one side of the second electrode (opposite to the first electrode side). Of course, in addition to the exposed corresponding electrodes, the surfaces of the first semiconductor composite layer and the second semiconductor composite layer are also provided with other film layers.

[0053] Next, step S02 is performed to form a memristor layer covering the first semiconductor composite layer.

[0054] The memristor layer (also called the resistive switching layer) can be any suitable material with memristor function, such as hafnium oxide, aluminum oxide, titanium oxide or titanium oxynitride. In the present embodiment, the material of the memristor layer can be hafnium oxide, and can be formed by atomic layer deposition process, and its specific thickness can be determined according to the requirements of the memristor unit, for example, it can be 3 angstroms to 30 angstroms. In the preferred example, the flatness (smoothness) of the surface of the first semiconductor composite layer is better than the flatness of the surface of the second semiconductor composite layer, so that the surface of the memristor layer is as flat as possible.

[0055] Next, step S03 is performed to provide a second substrate on which a second semiconductor composite layer is disposed.

[0056] The second substrate can be any suitable semiconductor substrate, and a second semiconductor composite layer is formed on the second substrate. As mentioned above, the second semiconductor composite layer matches the first semiconductor composite layer, and the second semiconductor composite layer includes a film layer structure (including the second electrode) on one side of the second electrode (the side opposite to the first electrode). It can be understood that since the second semiconductor composite layer forms each film layer structure layer by layer on the second substrate, which is equivalent to forming a partial film layer structure in a three-dimensional memristor from top to bottom, on the premise of ensuring that the function of each film layer structure in the second semiconductor composite layer meets the requirements, the orientation and position of each film layer structure can also be appropriately adjusted to facilitate the formation of the second semiconductor composite layer on the second substrate.

[0057] Next, step S04 is performed to form an adhesive layer to cover the second semiconductor composite layer, wherein the adhesive layer includes the exposed silicon oxide layer.

[0058] The adhesive layer is disposed between the first electrode and the second electrode of the memristor unit, and is used to connect the first semiconductor composite layer and the second semiconductor composite layer. By selecting a suitable material, the adhesive layer disposed between the memristor unit and the second electrode has as little or expected influence on the function of the memristor unit as possible. On the other hand, the adhesive layer can also be regarded as a part of the memristor layer.

[0059] In this embodiment, the material of the bonding layer may include silicon oxide and may be formed by a vapor deposition process. The thickness of the bonding layer may be determined according to actual needs. Since the flatness of the surface of the second semiconductor composite layer is better than that of the surface of the first semiconductor composite layer, the thickness of the bonding layer may be greater than the thickness of the memristor layer to make the surface of the bonding layer as flat as possible. In some examples, a grinding process may be performed after the bonding layer is formed to obtain a relatively flat surface to ensure that the thickness of the bonding layer meets the requirements. In addition, in other examples, the bonding layer may also be a composite film layer including multiple film layers, the outermost layer of which is an exposed silicon oxide layer.

[0060] Next, step S05 is performed to perform hydroxylation treatment on the surfaces of the memristor layer and the silicon oxide layer.

[0061] It should be noted that the molecular structures and chemical bonds between the memristor layer and the silicon oxide layer are different, and it is difficult to form a stable chemical bond connection at the interface between the two by direct heating and pressurization. For this reason, in this embodiment, the surfaces of the memristor layer and the silicon oxide layer are hydroxylated so that hydroxyl groups are suspended on the surfaces of the memristor layer and the silicon oxide layer, and the dehydration reaction of the hydroxyl groups at the two interfaces under heating and pressurization is utilized to form a stable chemical bond connection between the memristor layer and the silicon oxide layer.

[0062] In this embodiment, the memristor layer may be a hafnium oxide layer. Before the hydroxylation treatment, the memristor layer and the silicon oxide layer may be cleaned, for example, by using anhydrous ethanol and deionized water to remove organic matter and particle impurities on the surface of the memristor layer and the silicon oxide layer.

[0063] In one example, the hydroxylation treatment method includes: using a mixture of ammonia and hydrogen peroxide to clean the surface of the oxide layer and the silicon oxide layer, and then using deionized water to clean the oxide layer and the silicon oxide layer. In the mixture of ammonia and hydrogen peroxide, the volume ratio of ammonia: hydrogen peroxide: water can be about 1:1:5.

[0064] In another example, the hydroxylation treatment method includes: performing a plasma activation treatment including hydrogen plasma and oxygen plasma on the surface of the memristor layer and the silicon oxide layer. When performing the plasma activation treatment, the process gas may include a mixed gas of argon / nitrogen / oxygen / hydrogen, the pressure of the mixed gas may be 50Pa to 100Pa, the vacuum degree of the plasma formed by the mixed gas may be 10Pa to 20Pa, and the plasma power may be 50W to 300W.

[0065] In another example, the hydroxylation treatment method includes: soaking the memristor layer and the silicon oxide layer in a weak alkaline solution, then washing them in deionized water, and drying them. The weak alkaline solution can be an ammonia solution, and its concentration can be 1% to 3%. The soaking time depends on the concentration of the weak alkaline solution, for example, 1 minute to 5 minutes.

[0066] In this embodiment, any one or several of the above three examples may be used for hydroxylation treatment.

[0067] Next, step S06 is performed to perform thermocompression bonding on the memristor layer and the silicon oxide layer, so that the first semiconductor composite layer and the second semiconductor composite layer are stacked and connected.

[0068] Specifically, the memristor layer of the first substrate and the silicon oxide layer of the second substrate can be aligned face to face, and the first hot pressing (hot pressing bonding) can be performed. Then, the first substrate and the second substrate after hot pressing can be annealed to make the first semiconductor composite layer and the second semiconductor composite layer stacked and connected, and the annealing temperature is greater than the hot pressing temperature of the first hot pressing. The first hot pressing can make the first substrate and the second substrate initially connected (partial reaction), and the annealing treatment makes the first substrate and the second substrate after hot pressing further connected until they are fully connected. This arrangement can save the machine time of the hot pressing step to improve the efficiency of the hot pressing step. Among them, the hot pressing temperature of the first hot pressing can be 30℃~250℃, the hot pressing pressure is 0.5Mpa~2.5Mpa, and the hot pressing time depends on the hot pressing temperature, which can be 5 minutes to 90 minutes. Taking the furnace tube process for annealing as an example, the annealing temperature of the annealing treatment is 150℃~400℃, and the annealing time is 30 minutes to 120 minutes. In addition, rapid thermal annealing or laser annealing can also be used to perform the above annealing treatment. In a preferred example, the annealing treatment can also be performed in a vacuum environment (vacuum atmosphere) to facilitate the escape of moisture in the dehydration condensation. Taking the material of the memristor layer as hafnium oxide as an example, the first substrate and the second substrate can be connected by using the Hf-O-Si chemical bond formed between the memristor layer and the silicon oxide layer.

[0069] In other examples of this embodiment, after the memristor layer and the silicon oxide layer are aligned face to face, the first substrate and the second substrate may be subjected to a second hot pressing to stack and connect the first semiconductor composite layer and the second semiconductor composite layer, the hot pressing temperature of the second hot pressing is greater than the hot pressing temperature of the first hot pressing, and the hot pressing time of the second hot pressing is greater than the hot pressing time of the first hot pressing. In this example, the annealing step can be saved by increasing the hot pressing temperature of the hot pressing bonding and extending the hot pressing time of the hot pressing bonding.

[0070] It should be noted that after the first substrate and the second substrate are bonded to form a three-dimensional memristor, part of the thickness of the first substrate and / or part of the thickness of the second substrate can be removed, or even the first substrate or the second substrate can be completely removed to reduce the overall thickness and facilitate subsequent electrical lead-out.

[0071] An embodiment of the present invention further provides a bonding method for a semiconductor device.

[0072] Figure 2 It is a flow chart of the semiconductor device bonding method provided in this embodiment.

[0073] like Figure 2 As shown, the bonding method of the semiconductor device provided in this embodiment includes:

[0074] S01: providing a first substrate, on which a first semiconductor composite layer is provided;

[0075] S02: forming a high dielectric constant dielectric layer to cover the first semiconductor composite layer;

[0076] S03: providing a second substrate, on which a second semiconductor composite layer is disposed;

[0077] S04: forming a silicon oxide layer to cover the second semiconductor composite layer;

[0078] S05: performing hydroxylation treatment on the surfaces of the high dielectric constant dielectric layer and the silicon oxide layer;

[0079] S06: performing thermocompression bonding on the high dielectric constant medium layer and the silicon oxide layer to bond the first semiconductor composite layer to the second semiconductor composite layer.

[0080] The bonding method of the semiconductor device provided in this embodiment is basically similar to the stacking method of the three-dimensional memristor described above, and the only difference is that the semiconductor device prepared in this embodiment is not limited to the three-dimensional memristor. Therefore, the film layer formed on the first semiconductor composite layer can be other high dielectric constant dielectric layers required by the semiconductor device in addition to the memristor layer. The specific steps and details of the bonding method of the above-mentioned semiconductor device can be specifically referred to the stacking method of the three-dimensional memristor described above, and will not be repeated here.

[0081] In summary, the stacking method of a three-dimensional memristor provided by the present invention includes: providing a first substrate, on which a first semiconductor composite layer is provided; forming a memristor layer to cover the first semiconductor composite layer; providing a second substrate, on which a second semiconductor composite layer is provided; forming an adhesive layer to cover the second semiconductor composite layer, the adhesive layer including an exposed silicon oxide layer; performing a hydroxylation treatment on the surface of the memristor layer and the silicon oxide layer; performing hot pressing bonding on the memristor layer and the silicon oxide layer, so that the first semiconductor composite layer and the second semiconductor composite layer are stacked and connected. Compared with sequentially forming each film layer structure from bottom to top on a substrate to prepare a three-dimensional memristor, in the present invention, the three-dimensional memristor to be prepared is split into two parts along the thickness direction with one of the memristor units as the center, and one part is formed on the first substrate and the second substrate respectively. In other words, the first semiconductor composite layer is formed on the first substrate, and the second semiconductor composite layer is formed on the second substrate, so that the complexity of the prepared structure is reduced and the process difficulty during preparation is reduced, and then the first semiconductor composite layer and the second semiconductor composite layer are bonded and connected to stack into a three-dimensional memristor, thereby reducing the process difficulty of preparing the three-dimensional memristor and simplifying its preparation process. Moreover, considering that the memristive layer on the surface of the first semiconductor composite layer is difficult to be directly bonded to the surface (electrode layer) of the second semiconductor composite layer, the present invention also forms an adhesive layer (including an exposed silicon oxide layer) on the surface of the second semiconductor composite layer before connecting the first substrate and the second substrate, performs hydroxylation treatment on the surfaces of the memristive layer and the adhesive layer so that hydroxyl groups are suspended on their surfaces, and then performs hot-press bonding on the memristive layer and the silicon oxide layer so that the hydroxyl groups on the surfaces of the memristive layer and the silicon oxide layer are condensed and dehydrated to form a stable chemical bond connection.

[0082] The above description is only a description of the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention. Any changes or modifications made by a person skilled in the art in the field of the present invention based on the above disclosure shall fall within the scope of protection of the claims.

Claims

1. A three-dimensional memristor stacking method, characterized in that: include: Providing a first substrate, on which a first semiconductor composite layer is disposed; forming a memristor layer to cover the first semiconductor composite layer; providing a second substrate on which a second semiconductor composite layer is disposed; forming an adhesive layer to cover the second semiconductor composite layer, wherein the adhesive layer comprises an exposed silicon oxide layer; Performing hydroxylation treatment on the surfaces of the memristor layer and the silicon oxide layer; The memristor layer and the silicon oxide layer are thermally pressed and bonded to make the first semiconductor composite layer and the second semiconductor composite layer stacked and connected.

2. The three-dimensional memristor stacking method according to claim 1, characterized in that: The memristive layer includes hafnium oxide, aluminum oxide, titanium oxide or titanium oxynitride.

3. The stacking method of three-dimensional memristors according to claim 1, characterized in that: The flatness of the surface of the first semiconductor composite layer is better than the flatness of the surface of the second semiconductor composite layer.

4. The stacking method of three-dimensional memristors according to claim 1, characterized in that: The step of hydroxylation treatment comprises: The surfaces of the memristor layer and the silicon oxide layer are cleaned with a mixture of ammonia water and hydrogen peroxide, and / or, performing a plasma activation treatment including hydrogen plasma and oxygen plasma on the surfaces of the memristor layer and the silicon oxide layer, and / or The memristor layer and the silicon oxide layer are soaked in a weak alkaline solution.

5. The three-dimensional memristor stacking method according to claim 1, characterized in that: The step of performing thermal compression bonding on the memristor layer and the silicon oxide layer comprises: Aligning the memristor layer and the silicon oxide layer face to face; performing a first hot pressing on the first substrate and the second substrate; The first substrate and the second substrate after hot pressing are annealed to stack and connect the first semiconductor composite layer and the second semiconductor composite layer, and the annealing temperature is higher than the hot pressing temperature of the first hot pressing.

6. The three-dimensional memristor stacking method according to claim 5, characterized in that: The first hot pressing has a hot pressing temperature of 30° C. to 250° C., a hot pressing time of 5 minutes to 90 minutes, and a hot pressing pressure of 0.5 MPa to 2.5 MPa.

7. The three-dimensional memristor stacking method according to claim 6, characterized in that: The annealing treatment is furnace tube annealing, the annealing temperature of the annealing treatment is 150° C. to 400° C., and the annealing time is 30 minutes to 120 minutes.

8. The method for stacking three-dimensional memristors according to any one of claims 5 to 7, characterized in that: The annealing process is performed in a vacuum environment.

9. The three-dimensional memristor stacking method according to claim 1, characterized in that: The step of performing thermal compression bonding on the memristor layer and the silicon oxide layer comprises: Aligning the memristor layer and the silicon oxide layer face to face; The first substrate and the second substrate are subjected to a second hot pressing so that the first semiconductor composite layer is stacked and connected with the second semiconductor composite layer, the hot pressing temperature of the second hot pressing is greater than the hot pressing temperature of the first hot pressing, and the hot pressing time of the second hot pressing is greater than the hot pressing time of the first hot pressing.

10. A method for bonding a semiconductor device, characterized in that: include: Providing a first substrate, on which a first semiconductor composite layer is disposed; forming a high dielectric constant dielectric layer to cover the first semiconductor composite layer; providing a second substrate on which a second semiconductor composite layer is disposed; forming a silicon oxide layer to cover the second semiconductor composite layer; Performing hydroxylation treatment on the surfaces of the high dielectric constant dielectric layer and the silicon oxide layer; The high dielectric constant medium layer and the silicon oxide layer are thermally pressed and bonded to bond the first semiconductor composite layer to the second semiconductor composite layer.

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