Low-power-consumption semiconductor gas sensor aging test device

Abstract

The invention discloses an aging test device for a low-power semiconductor gas sensor. The aging test device comprises a control unit, an aging control unit and an acquisition control unit, the control unit sends a first control signal to the aging control unit, and the aging control unit provides a periodically output aging signal for the sensor to be tested according to the first control signal; the control unit sends a second control signal to the acquisition control unit, and the acquisition control unit outputs a test signal to the sensor to be tested according to the second control signal; and the control unit is also used for acquiring sampling data of the acquisition end. According to the low-power-consumption semiconductor gas sensor aging test device, independent detection of the to-be-tested sensor is realized, the reject ratio of subsequent application of the to-be-tested sensor is reduced, the production efficiency is improved, and the production cost is reduced.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of testing technology, and in particular to a low-power semiconductor gas sensor aging test device. Background Art

[0002] With the improvement of people's safety awareness and the promotion of national policies, the installation rate of gas alarms in households is increasing year by year. As the core component of gas alarms, the performance of low-power semiconductor gas sensors affects the quality of alarm products.

[0003] In the existing aging test of semiconductor sensors, alarm manufacturers usually mount semiconductor gas sensors directly on the gas alarm circuit board and use them after the entire machine ages. This method not only increases the maintenance and replacement costs of the sensor, but also reduces the detection yield of the gas alarm product. Summary of the invention

[0004] The present invention provides a low-power semiconductor gas sensor aging test device, which realizes independent detection of a sensor to be tested, reduces the defect rate of subsequent applications of the sensor to be tested, improves production efficiency, and reduces production costs.

[0005] The embodiment of the present invention provides a low-power semiconductor gas sensor aging test device, including: a control unit, an aging control unit and a collection control unit;

[0006] The control unit is connected to the aging control unit and the acquisition control unit respectively, and the aging control unit is connected to the aging end of the sensor to be tested; the control unit is used to send a first control signal to the aging control unit, and the aging control unit is used to provide a periodically output aging signal to the sensor to be tested according to the first control signal;

[0007] The acquisition control unit is connected to the acquisition end of the sensor to be tested; the control unit is used to send a second control signal to the acquisition control unit, and the acquisition control unit is used to output a test signal to the sensor to be tested according to the second control signal; the control unit is connected to the acquisition end of the sensor to be tested; the control unit is also used to collect sampling data from the acquisition end.

[0008] Optionally, the aging control unit and the acquisition control unit serve as aging test modules; the low-power semiconductor gas sensor aging test device comprises an analog switch unit and a plurality of the aging test modules; each of the aging test modules is connected to one of the sensors to be tested;

[0009] The control unit is respectively connected to the aging control unit and the acquisition control unit of each aging test module, and the acquisition end of each sensor to be tested is connected to the control unit through the analog switch unit; the analog switch unit is used to select and conduct the acquisition path between the acquisition end of any sensor to be tested and the control unit.

[0010] Optionally, the aging control unit and the acquisition control unit serve as aging test modules; the low-power semiconductor gas sensor aging test device comprises a plurality of analog switch units and a plurality of the aging test modules; each of the aging test modules is connected to one of the sensors to be tested;

[0011] The control unit is respectively connected to the aging control unit and the acquisition control unit of each aging test module;

[0012] A plurality of the aging test modules serve as a test group, and the control unit is connected to the collection end of the sensor to be tested in each test group through one of the analog switch units.

[0013] Optionally, the aging control unit includes a first switch unit and a second switch unit;

[0014] The control end of the first switch unit is connected to the first control signal output end of the control unit; the first end of the first switch unit is connected to the first signal source; the second end of the first switch unit is connected to the control end of the second switch unit, the first end of the second switch unit is connected to the aging power supply; the second end of the second switch unit is connected to the aging end of the sensor to be tested;

[0015] The first switch unit is used to periodically output a first signal according to the first control signal; the second switch unit is used to periodically turn on or off the path between the aging power supply and the aging end of the sensor to be tested according to the first signal.

[0016] Optionally, the acquisition control unit includes a third switch unit,

[0017] The control end of the third switch unit is connected to the second control signal output end of the control unit; the first end of the third switch unit is connected to the test power supply, and the second end of the third switch unit is connected to the collection end of the sensor to be tested, and the third switch unit is used to open the path between the test power supply and the collection end of the sensor to be tested according to the second control signal.

[0018] Optionally, the first switch unit, the second switch unit and the third switch unit are crystal switch tubes.

[0019] Optionally, the aging control unit also includes a connecting socket; the connecting socket is used to plug the sensor to be tested, and the second end of the second switch unit is connected to the aging end of the sensor to be tested through the connecting socket; the second end of the third switch unit is connected to the collection end of the sensor to be tested through the connecting socket.

[0020] Optionally, the first control signal is a pulse width modulation signal.

[0021] Optionally, the analog switch unit is an analog switch, and a model of the analog switch is TMUX1109PWR.

[0022] Optionally, the low-power semiconductor gas sensor aging test device further includes a serial communication unit, and the control unit is communicatively connected to the host computer via the serial communication unit.

[0023] The low-power semiconductor gas sensor aging test device provided by the embodiment of the present invention connects the aging control unit to the aging end of the sensor to be tested, and the acquisition control unit to the acquisition end of the sensor to be tested. The control unit sends a first control signal to the aging control unit, and the aging control unit provides a periodically output aging signal to the sensor to be tested according to the first control signal, thereby realizing a periodic aging test of the sensor. Then, the control unit sends a second control signal to the acquisition control unit, and the acquisition control unit outputs a test signal to the sensor to be tested according to the second control signal. The control unit obtains sampling data from the acquisition end to realize the acquisition process of the sensor to be tested. The low-power semiconductor gas sensor aging test device provided by the embodiment of the present invention is suitable for independent detection of different types of sensors to be tested, thereby reducing the defective rate of subsequent sensor applications to be tested, improving production efficiency, and reducing production costs. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 A schematic diagram of the structure of a low-power semiconductor gas sensor aging test device is provided for an embodiment of the present invention;

[0025] Figure 2 A schematic diagram of the internal electrical structure of a gas sensor is shown;

[0026] Figure 3 A structural schematic diagram of another low-power semiconductor gas sensor aging test device is provided for an embodiment of the present invention;

[0027] Figure 4 A structural schematic diagram of another low-power semiconductor gas sensor aging test device is provided for an embodiment of the present invention;

[0028] Figure 5 A schematic diagram of the circuit structure of an aging test module is provided for an embodiment of the present invention;

[0029] Figure 6 A schematic diagram of the structure of a pin-to-pin interface provided in an embodiment of the present invention;

[0030] Figure 7 A schematic diagram of the structure of an analog switch unit provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0032] In the existing aging test of semiconductor sensors, alarm manufacturers usually mount semiconductor gas sensors directly on the gas alarm circuit board and use them after the whole device ages. This method not only increases the maintenance and replacement costs of the sensor, but also reduces the detection yield of the gas alarm product. Based on the above problems, a device that provides aging testing for the sensor alone is needed.

[0033] In view of this, Figure 1 A schematic diagram of a low-power semiconductor gas sensor aging test device is provided for an embodiment of the present invention. Figure 1 , including: a control unit 110, an aging control unit 120 and a collection control unit 130;

[0034] The control unit 110 is connected to the aging control unit 120 and the acquisition control unit 130 respectively, and the aging control unit 120 is connected to the aging end of the sensor 140 to be tested; the control unit 110 is used to send a first control signal to the aging control unit 120, and the aging control unit 120 is used to provide a periodically output aging signal to the sensor 140 to be tested according to the first control signal;

[0035] The acquisition control unit 130 is connected to the acquisition end of the sensor to be tested 140; the control unit 110 is used to send a second control signal to the acquisition control unit 130, and the acquisition control unit 130 is used to output a test signal to the sensor to be tested 140 according to the second control signal; the control unit 110 is connected to the acquisition end of the sensor to be tested 140; the control unit 110 is also used to collect sampling data from the acquisition end.

[0036] Specifically, the control unit 110 has the capabilities of data processing, data acquisition, storage and reading, and is the main control unit of the low-power semiconductor gas sensor aging test device. Exemplarily, the control unit 110 can use a single-chip microcomputer. In the aging stage, the control unit 110 can send a first control signal to the aging control unit 120. The first control signal can be a voltage signal or a level signal. The first control signal is used to allow the aging control unit 120 to periodically output an aging signal.

[0037] For example, in an optional working mode, the control unit 110 may send an intermittent first control signal, and when the aging control unit 120 receives the first control signal, it outputs the aging signal to the sensor to be tested 140, and when the aging control unit 120 does not receive the first control signal, it stops outputting the aging signal to the sensor to be tested 140. In another optional working mode, the control unit 110 may send a continuous first control signal, wherein the first control signal may be a pulse width modulation signal, and therefore, the first control signal has a high level timing and a low level timing, and when the aging control unit 120 receives a pulse width modulation signal with a high level timing, it may output the aging signal to the sensor to be tested 140, and when the aging control unit 120 receives a pulse width modulation signal with a low level timing, it may stop outputting the aging signal to the sensor to be tested 140. In some embodiments, the working mode of the aging control unit 120 can also be that when the aging control unit 120 receives a pulse width modulation signal with a high level timing, it stops outputting the aging signal to the sensor to be tested 140, and when the aging control unit 120 receives a pulse width modulation signal with a low level timing, it outputs the aging signal to the sensor to be tested 140.

[0038] Since the functions and models of the sensor 140 to be tested are different, the sensor 140 to be tested usually has pins with different functions. According to the model and pin type of the sensor 140 to be tested, as well as the usage method, the aging end of the sensor 140 to be tested and the acquisition end of the sensor 140 to be tested can be determined. For example, the sensor 140 to be tested takes the low-power semiconductor methane gas sensor SMB-95-11 as an example. Figure 2The schematic diagram of the internal electrical structure of a gas sensor is shown. The first pin 1 of the sensor is the negative pole -, the third pin 3 is the positive pole +, there is a thermal resistor RH for pulse heating aging between the first pin 1 and the third pin 3, the first pin 1 is grounded, and the third pin 3 is the aging end of the sensor. The aging signal periodically output by the aging control unit 120 can be output to the third pin 3, and the purpose of pulse heating aging of the sensor is achieved through periodic changes. A variable internal resistor RS is connected between the first pin 1 and the second pin 2, and the second pin 2 is the collection end of the sensor that needs to be collected. When the collection control unit 130 outputs a test signal to the sensor 140 to be tested according to the second control signal, the second pin 2 has a certain voltage, and the voltage at the second pin 2 is the voltage that needs to be collected.

[0039] The control unit 110 may send a second control signal to the acquisition control unit 130. The second control signal may be a voltage signal or a level signal. The second control signal is used to make the acquisition control unit 130 output a test signal. For example, in an optional working mode, the control unit 110 may send a second control signal. When the acquisition control unit 130 receives the second control signal, it outputs the test signal to the acquisition end of the sensor 140 to be tested. When the acquisition control unit 130 does not receive the second control signal, it stops outputting the test signal to the sensor 140 to be tested. Figure 2 There is a variable internal resistance RS between the first pin 1 and the second pin 2 inside the sensor. The test signal causes the second pin 2 to have a certain voltage, and the control unit 110 obtains the sampling data from the second pin 2. The control unit 110 can send the sampling data to an external host computer through a serial communication unit, and the external host computer processes and analyzes the data to obtain the sensor performance parameters. Among them, the serial communication unit includes an RS232 interface.

[0040] The low-power semiconductor gas sensor aging test device provided by the embodiment of the present invention connects the aging control unit 120 to the aging end of the sensor 140 to be tested, and the acquisition control unit 130 to the acquisition end of the sensor 140 to be tested. The control unit 110 sends a first control signal to the aging control unit 120, and the aging control unit 120 provides a periodically output aging signal to the sensor 140 to be tested according to the first control signal, thereby realizing a periodic aging test of the sensor, and then sends a second control signal to the acquisition control unit 130 through the control unit 110, and the acquisition control unit 130 outputs a test signal to the sensor 140 to be tested according to the second control signal. The control unit 110 obtains sampling data from the acquisition end to realize the acquisition process of the sensor 140 to be tested. The low-power semiconductor gas sensor aging test device provided by the embodiment of the present invention is suitable for independent detection of different types of sensors 140 to be tested, thereby reducing the defective rate of subsequent applications of the sensor 140 to be tested, improving production efficiency, and reducing production costs.

[0041] Based on the above embodiments, Figure 3 A schematic diagram of a low-power semiconductor gas sensor aging test device is provided for an embodiment of the present invention. Figure 3 , the aging control unit 120 and the acquisition control unit 130 serve as an aging test module 210; the low-power semiconductor gas sensor aging test device comprises an analog switch unit 150 and a plurality of aging test modules 210; each aging test module 210 is connected to a sensor to be tested 140;

[0042] The control unit 110 is respectively connected to the aging control unit 120 and the acquisition control unit 130 of each aging test module 210, and the acquisition end of each sensor 140 to be tested is connected to the control unit 110 through the analog switch unit 150; the analog switch unit 150 is used to select and conduct the acquisition path between the acquisition end of any sensor 140 to be tested and the control unit 110.

[0043] Specifically, in order to further improve the test efficiency, batch testing can be adopted. Therefore, the low-power semiconductor gas sensor aging test device has multiple aging test modules 210, and each aging test module 210 is connected to a sensor to be tested 140. That is to say, the control unit 110 can simultaneously send a first control signal to the aging control unit 120 of each aging test module 210. Exemplarily, taking the first control signal as a pulse width modulation signal, the aging control unit 120 outputs the aging signal at a high level timing as an example. When each aging control unit 120 receives a pulse width modulation signal with a high level timing, it can output the aging signal to the corresponding connected sensor to be tested 140. When the aging control unit 120 receives a pulse width modulation signal with a low level timing, it can stop outputting the aging signal to the sensor to be tested 140, thereby realizing batch and centralized periodic aging testing of the sensors to be tested 140. For the collection of sampled data of the sensor 140 to be tested, the collection end of each sensor 140 to be tested is connected to the control unit 110 through the analog switch unit 150, and the control unit 110 sends a second control signal to the collection control unit 130. The second control signal can be a voltage signal or a level signal, and the collection control unit 130 outputs a test signal according to the second control signal. The analog switch unit 150 is used to select the data channel between the collection end of the sensor 140 to be tested and the control unit 110, so that the sampled data of the collection end of the sensor 140 to be tested can be collected in a manner of all or any selection through timing control.

[0044] Based on the above embodiments, Figure 4 The present invention provides a structural schematic diagram of another low-power semiconductor gas sensor aging test device, combined with Figure 3 , see Figure 4 , the aging control unit 120 and the acquisition control unit 130 serve as an aging test module 210; the low-power semiconductor gas sensor aging test device comprises a plurality of analog switch units 150 and a plurality of aging test modules 210; each aging test module 210 is connected to a sensor to be tested 140;

[0045] The control unit 110 is connected to the aging control unit 120 and the acquisition control unit 130 of each aging test module 210 respectively; multiple aging test modules 210 are used as a test group 310, and the control unit 110 is connected to the acquisition end of the sensor 140 to be tested in each test group through an analog switch unit 150.

[0046] Specifically, when the control unit 110 has multiple data terminals, multiple test groups 310 can be set in parallel, and multiple aging test modules 210 are set in each test group 310, wherein the data terminal is a port for collecting sampled data of the sensor 140 to be tested. Each aging test module 210 is connected to a corresponding sensor 140 to be tested. That is to say, the control unit 110 can simultaneously send a first control signal (line not shown) to the aging control unit 120 in each test group 310. Exemplarily, taking the first control signal as a pulse width modulation signal, the aging control unit 120 outputs the aging signal at a high level timing as an example, when each aging control unit 120 receives a pulse width modulation signal with a high level timing, it can output the aging signal to the corresponding connected sensor 140 to be tested, and when the aging control unit 120 receives a pulse width modulation signal with a low level timing, it can stop outputting the aging signal to the sensor 140 to be tested, thereby realizing batch and centralized periodic aging test of the sensor 140 to be tested.

[0047] For the collection of sampled data of the sensor 140 to be tested, a data terminal of the control unit 110 is connected to the collection terminal of each sensor 140 to be tested in the test group 310 through an analog switch unit 150. The control unit 110 sends a second control signal (line not shown) to the collection control unit 130. The second control signal can be a voltage signal or a level signal. The collection control unit 130 outputs a test signal according to the second control signal, and uses the analog switch unit 150 corresponding to each test group 310 to select the data channel between the collection terminal of the sensor 140 to be tested and the data terminal of the control unit 110, so that the sampled data of the collection terminal of the sensor 140 to be tested in each test group 310 can be collected in a manner of all or any selection through timing control. Thereby further expanding the aging and collection capabilities of the low-power semiconductor gas sensor aging test device, and effectively improving the detection efficiency.

[0048] Optionally, the low-power semiconductor gas sensor aging test device also includes a serial communication unit 160, and the control unit 110 is connected to the host computer through the serial communication unit 160. Specifically, serial communication has strong stability, can realize data transmission within a long transmission distance, and is not easily affected by external interference. The control unit 110 can send the sampled data to an external host computer through the serial communication unit 160, and the external host computer performs data processing and analysis to obtain sensor performance parameters. Among them, the serial communication unit 160 includes an RS232 interface. The low-power semiconductor gas sensor aging test device also includes a power management module 170, which can provide power output for the aging test module 210, the control unit 110, the sensor to be tested 140 and the serial communication unit 160, such as an aging power supply, a test power supply, etc.

[0049] Based on the above embodiments, Figure 5 A schematic diagram of the circuit structure of an aging test module is provided in an embodiment of the present invention. Figure 5 , wherein the aging control unit 120 includes a first switch unit 410 and a second switch unit 420;

[0050] The control end of the first switch unit 410 is connected to the first control signal output end FIS_VH1 of the control unit 110; the first end of the first switch unit 410 is connected to the first signal source; the second end of the first switch unit 410 is connected to the control end of the second switch unit 420, and the first end of the second switch unit 420 is connected to the aging power supply VCC_FIS1; the second end of the second switch unit 420 is connected to the aging end of the sensor 140 to be tested;

[0051] The first switch unit 410 is used to periodically output the first signal according to the first control signal; the second switch unit 420 is used to periodically turn on or off the path between the aging power supply VCC_FIS1 and the aging end of the sensor 140 under test according to the first signal.

[0052] Specifically, the first switch unit 410 can be turned on or off according to the first control signal sent by the control unit 110, wherein when the first switch unit 410 is in the on state, the second end of the first switch unit 410 outputs the first signal, and the second switch unit 420 switches to the on state. When the first switch unit 410 is in the off state, the second end of the first switch unit 410 cuts off the output of the first signal, and the second switch unit 420 switches to the off state. When the first switch unit 410 is in the on state and the second switch unit 420 is in the on state, the aging signal of the aging power supply VCC_FIS1 can be input to the aging end of the sensor 140 to be tested through the second switch unit 420. By controlling the first switch unit 410 to be periodically turned on or off, the second switch unit 420 is also periodically turned on or off, thereby obtaining the periodic output of the aging signal.

[0053] Optional, continue to see Figure 5, the first switch unit 410 and the second switch unit 420 can be crystal switch tubes. For example, the first switch unit 410 is a transistor Q1, and the second switch unit 420 is a first MOS switch tube Q5. The first MOS switch tube Q5 adopts a P-type MOS switch tube. The base of the transistor Q1 is connected to the first control signal output terminal FIS_VH1 of the control unit 110 as the control terminal of the first switch unit 410. The emitter E of the transistor Q1 is connected to the first signal source as the first end of the first switch unit 410, wherein the first signal source is the ground terminal GND. The collector C of the transistor Q1 is connected to the control terminal of the second switch unit 420 as the second end of the first switch unit 410, and the gate G of the first MOS switch tube Q5 is connected to the control terminal of the second switch unit 420. The source S of the first MOS switch tube Q5 is connected to the aging power supply VCC_FIS1 as the first end of the second switch unit 420; the drain D of the first MOS switch tube Q5 is connected to the aging end of the sensor 140 to be tested as the second end of the second switch unit 420. A first pull-down resistor R1 may be provided between the base and the emitter of the transistor Q1 , and a second pull-down resistor R9 may be provided between the gate and the source of the first MOS switch tube Q5 .

[0054] Exemplarily, the first control signal is a pulse width modulation signal, and the first control signal output terminal FIS_VH1 of the control unit 110 outputs the first control signal. The alternating change of the high and low level timing of the first control signal turns the transistor Q1 on or off. When the transistor Q1 is turned off, the gate of the first MOS switch tube Q5 has no input signal, and the first MOS switch tube Q5 is in a cut-off state. At this time, the aging signal output by the aging power supply VCC_FIS1 is cut off and input to the aging end of the sensor to be tested 140. When the transistor Q1 is turned on, the gate of the first MOS switch tube Q5 is grounded, and the first MOS switch tube Q5 is also in a conducting state. The aging signal output by the aging power supply VCC_FIS1 can be input to the aging end of the sensor to be tested 140. Therefore, the control unit 110 causes the sensor to be tested 140 to undergo periodic power supply changes through the first control signal, thereby achieving the purpose of pulse heating aging of the sensor. The sensor to be tested 140 takes the low-power methane semiconductor gas sensor SMB-95-11 as an example, and the third pin 3 is the aging end of the sensor.

[0055] Continue to see Figure 5Optionally, the acquisition control unit 130 includes a third switch unit 430, the control end of the third switch unit 430 is connected to the second control signal output end FIS_VC_EN1 of the control unit 110; the first end of the third switch unit 430 is connected to the test power supply VCC_FIS2, and the second end of the third switch unit 430 is connected to the acquisition end of the sensor to be tested 140. The third switch unit 430 is used to conduct the path between the test power supply VCC_FIS2 and the acquisition end of the sensor to be tested 140 according to the second control signal. It should be noted that the voltage values ​​of the aging power supply VCC_FIS1 and the test power supply VCC_FIS2 can be the same or different, and there is no specific limitation here.

[0056] Specifically, the third switch unit 430 can be turned on or off according to the second control signal sent by the control unit 110, wherein when the third switch unit 430 is in the on state, the second end of the third switch unit 430 outputs the test signal to the collection end of the sensor 140 to be tested. Figure 2 , the sensor 140 to be tested takes the low-power consumption methane semiconductor gas sensor SMB-95-11 as an example, and the second pin 2 is the acquisition end of the sensor. When the test signal is output to the acquisition end of the sensor 140 to be tested, due to the electrical structure of the sensor 140 to be tested, there is a variable internal resistance RS between the first pin 1 and the second pin 2, so that the second pin 2 has a certain voltage, so that the sampling data can be obtained at the second pin 2.

[0057] Optional, continue to see Figure 5 The third switch unit 430 may be a crystal switch tube. For example, the third switch unit 430 is a second MOS switch tube Q9. The second MOS switch tube Q9 may also be a P-type MOS switch tube. The gate of the second MOS switch tube Q9 is connected to the second control signal output terminal FIS_VC_EN1 of the control unit 110 as the control terminal of the third switch unit 430. The source electrode S of the second MOS switch tube Q9 is connected to the test power supply VCC_FIS2 as the first terminal of the third switch unit 430; the drain electrode D of the second MOS switch tube Q9 is connected to the collection terminal of the sensor 140 to be tested as the second terminal of the third switch unit 430.

[0058] When the second control signal output terminal FIS_VC_EN1 of the control unit 110 outputs a low level signal, the third switch unit 430 is turned on, and the test signal output by the test power supply VCC_FIS2 is input to the aging end of the sensor to be tested 140 through the voltage divider resistor R16. According to the electrical structure of the sensor to be tested 140, there is a variable internal resistance RS between the first pin 1 and the second pin 2, so that the second pin 2 has a certain voltage, and the control unit 110 can obtain voltage type sampling data at the second pin 2. After the sampling of the acquisition end of the sensor to be tested 140 is completed, the second control signal output terminal FIS_VC_EN1 of the control unit 110 outputs a high level, and the third switch unit 430 is turned off. Among them, FIS_VC1 in the figure represents the node of the same connection.

[0059] In order to facilitate the installation of the sensor 140 to be tested, the aging control unit 120 also includes a connector P1, which has a plug-in interface corresponding to the sensor pin, supports the insertion of a low-power semiconductor gas sensor with three pins, and has a polarity mark on the circuit board to avoid reverse plugging. Figure 6 The schematic diagram of the structure of the pin-to-pin interface provided in the embodiment of the present invention shows that for the low-power methane semiconductor gas sensor SMB-95-11, the connection socket P1 can be provided with three plug-in interfaces, and the numbers 1, 2, and 3 in the figure correspond to the first pin 1, the second pin 2, and the third pin 3, respectively. Therefore, by plugging the sensor 140 to be tested into the connection socket P1, the connection between the sensor 140 to be tested and the aging control unit 120 and the acquisition control unit 130 can be quickly realized.

[0060] When batch testing is adopted, the low-power semiconductor gas sensor aging test device is also provided with at least one analog switch unit 150, combined with Figure 3 and Figure 4 The analog switch unit 150 is arranged between the acquisition end of the sensor to be tested 140 and the control unit 110. The analog switch unit 150 is used to select the data channel between the acquisition end of the sensor to be tested 140 and the control unit 110 that needs to be collected, so that the sampling data of the acquisition end of the sensor to be tested 140 can be collected in sequence or arbitrarily on demand through timing control.

[0061] Exemplarily, the analog switch unit 150 can use an analog switch of model TMUX1109PWR, which has two independent groups of channels, each group of channels can select 4 channels, that is, each group of analog switch units 150 can be connected to the collection ends of 8 sensors 140 to be tested. When three groups of analog switch units 150 are selected, batch testing of 24 sensors 140 to be tested can be achieved.

[0062] Figure 7A schematic diagram of the structure of an analog switch unit provided by an embodiment of the present invention is shown in FIG. Figure 7 , A0-1 and A1-1 are channel selection terminals. Different true value (0, 1) combination inputs can select one of the two groups of channels. EN1 is the enable terminal, which is enabled by high level. FIS_VS1, FIS_VS2, FIS_VS3, and FIS_VS4 are the input terminals of the first group of channels, which can be connected to the acquisition terminals of the four sensors 140 to be tested that need to be collected in the four aging test modules 210. FIS_VS5, FIS_VS6, FIS_VS7, and FIS_VS8 are the input terminals of the second group of channels, which can be connected to the acquisition terminals of the four sensors 140 to be tested that need to be collected in the other four aging test modules 210. ADC_IN4 is the output terminal of the first group of channels, and ADC_IN5 is the output terminal of the second group of channels. The output terminals of the first group of channels and the output terminals of the second group of channels are both connected to the sampling terminal of the control unit 110.

[0063] When the acquisition end of the first sensor 140 to be tested needs to be sampled, the control unit 110 controls the output channel selection end A0-1, the channel selection end A1-1 and the enable end EN1 signal, so that the input end FIS_VS1 of a first group of channels is connected to the output end ADC_IN4 of the first group of channels, and then the control unit 110 starts voltage sampling. After the sampling of the sensor 140 to be tested is completed, the control unit 110 continues to control the output channel selection end A0-1, the channel selection end A1-1 and the enable end EN1 signal, starts the sampling of the second sensor 140 to be tested, and then the sampling of the third sensor 140 to be tested, ... until the voltage acquisition of all sensor pins is completed.

[0064] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A low-power semiconductor gas sensor aging test device, characterized in that: include: Control unit, aging control unit and acquisition control unit; The control unit is connected to the aging control unit and the acquisition control unit respectively, and the aging control unit is connected to the aging end of the sensor to be tested; the control unit is used to send a first control signal to the aging control unit, and the aging control unit is used to provide a periodically output aging signal to the sensor to be tested according to the first control signal; The acquisition control unit is connected to the acquisition end of the sensor to be tested; the control unit is used to send a second control signal to the acquisition control unit, and the acquisition control unit is used to output a test signal to the sensor to be tested according to the second control signal; the control unit is connected to the acquisition end of the sensor to be tested; the control unit is also used to collect sampling data from the acquisition end.

2. The low power semiconductor gas sensor aging test device according to claim 1, characterized in that: The aging control unit and the acquisition control unit serve as aging test modules; the low-power semiconductor gas sensor aging test device comprises an analog switch unit and a plurality of aging test modules; each aging test module is connected to one of the sensors to be tested; The control unit is respectively connected to the aging control unit and the acquisition control unit of each aging test module, and the acquisition end of each sensor to be tested is connected to the control unit through the analog switch unit; the analog switch unit is used to select and conduct the acquisition path between the acquisition end of any sensor to be tested and the control unit.

3. The low power semiconductor gas sensor aging test device according to claim 1, characterized in that: The aging control unit and the acquisition control unit serve as aging test modules; the low-power semiconductor gas sensor aging test device comprises a plurality of analog switch units and a plurality of the aging test modules; each of the aging test modules is connected to one of the sensors to be tested; The control unit is respectively connected to the aging control unit and the acquisition control unit of each aging test module; A plurality of the aging test modules serve as a test group, and the control unit is connected to the collection end of the sensor to be tested in each test group through one of the analog switch units.

4. The low power semiconductor gas sensor aging test device according to any one of claims 1 to 3, characterized in that: The aging control unit includes a first switch unit and a second switch unit; The control end of the first switch unit is connected to the first control signal output end of the control unit; the first end of the first switch unit is connected to the first signal source; the second end of the first switch unit is connected to the control end of the second switch unit, the first end of the second switch unit is connected to the aging power supply; the second end of the second switch unit is connected to the aging end of the sensor to be tested; The first switch unit is used to periodically output a first signal according to the first control signal; the second switch unit is used to periodically turn on or off the path between the aging power supply and the aging end of the sensor to be tested according to the first signal.

5. The low power semiconductor gas sensor aging test device according to claim 4, characterized in that: The acquisition control unit comprises a third switch unit, The control end of the third switch unit is connected to the second control signal output end of the control unit; the first end of the third switch unit is connected to the test power supply, and the second end of the third switch unit is connected to the collection end of the sensor to be tested, and the third switch unit is used to open the path between the test power supply and the collection end of the sensor to be tested according to the second control signal.

6. The low power semiconductor gas sensor aging test device according to claim 5, characterized in that: The first switch unit, the second switch unit and the third switch unit are crystal switch tubes.

7. The low power semiconductor gas sensor aging test device according to claim 5, characterized in that: The aging control unit also includes a connecting socket; the connecting socket is used to plug the sensor to be tested, and the second end of the second switch unit is connected to the aging end of the sensor to be tested through the connecting socket; the second end of the third switch unit is connected to the collection end of the sensor to be tested through the connecting socket.

8. The low power semiconductor gas sensor aging test device according to claim 4, characterized in that: The first control signal is a pulse width modulation signal.

9. The low power semiconductor gas sensor aging test device according to any one of claims 2-3, characterized in that: The analog switch unit is an analog switch, and the model of the analog switch is TMUX1109PWR.

10. The low power semiconductor gas sensor aging test device according to claim 1, characterized in that: It also includes a serial communication unit, and the control unit is connected to the host computer through the serial communication unit.

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