Plasma processing apparatus and method

By providing a support member in the plasma processing device to support the glass back plate and keep it in a horizontal state, the problem of uneven plasma processing intensity caused by gravity is solved, and the uniformity of the treatment effect is improved.

CN119542100APending Publication Date: 2025-02-28BOE TECHNOLOGY GROUP CO LTD +1
View PDF 8 Cites 0 Cited by

Patent Information

Application Number
CN202411720266.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-27
Publication Date
2025-02-28

AI Technical Summary

Technical Problem

Due to the gravity of the glass back plate in the plasma treatment device, the intermediate area naturally sags, resulting in uneven plasma treatment intensity, resulting in different treatment effects in different areas.

Method used

A plasma treatment device is designed, including a station and two electrode plates, and a support member is provided in the station to support the to-be-treated member so that it remains in a horizontal state, so that the distance from the electrode plate is the same at different positions on the same surface.

Benefits of technology

The support of the support member is kept in a horizontal state, avoiding differences in plasma treatment effects caused by gravity, and improving the uniformity of plasma treatment effects.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119542100A_ABST
    Figure CN119542100A_ABST
Patent Text Reader

Abstract

The invention provides a plasma processing device and method.The plasma processing device comprises an object placing table and two electrode plates, the object placing table comprises a hollow part and is arranged between the two electrode plates, and the plasma processing device further comprises a supporting piece, a first electrode plate and a second electrode plate, the supporting part is arranged in an orthographic projection area of the plane where the hollow part is located in the vertical direction and is used for supporting a to-be-processed piece placed on the object placing table. Wherein the part, exposed out of the hollow part, of the to-be-treated piece placed on the object placing table is supported through the supporting piece, so that the to-be-treated piece can be kept in a horizontal state, and the distances between the to-be-treated piece and the electrode plate on the same side are the same at different positions of the same side; the large difference between the plasma treatment effects of the middle and the edge due to the fact that the to-be-treated part droops under the influence of gravity is avoided, the difference between the plasma treatment effects of different positions of the to-be-treated part is reduced, and the uniformity of the plasma treatment effects is improved.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present disclosure relates to the field of plasma processing technology, and in particular to a plasma processing device and method. Background Art

[0002] This section is intended to provide a background or context to the embodiments of the disclosure that are recited in the claims. No description herein is admitted to be prior art by inclusion in this section.

[0003] The preparation process of light-emitting devices (such as OLED devices) requires multiple processes, among which plasma treatment of the glass backplane surface is a treatment process before the evaporation of the EL light-emitting film layer. Its main function is to remove surface residues and improve the surface work function, thereby improving the hole injection of the OLED device to improve the efficiency and life; therefore, the process of plasma treatment of the glass backplane is very important, but if the plasma treatment effect on different positions of the glass backplane is different, it will cause differences in product quality at different positions.

[0004] Since the glass machine in the plasma processing equipment in the related technology is completely hollow and the size of the glass back panel is relatively large, the middle area of ​​the glass will naturally sag due to gravity, resulting in significantly different distances between the middle area and the edge area from the upper and lower anodes and cathodes, resulting in different plasma processing intensities at different positions on the glass back panel, and ultimately differences in the processing effects of the plasma treatment process in different areas. Summary of the invention

[0005] In view of this, the purpose of the present disclosure is to provide a plasma processing device and method to at least solve one of the technical problems in the related art to a certain extent.

[0006] Based on the above-mentioned purpose, a first aspect of an exemplary embodiment of the present disclosure provides a plasma processing device, including a placement table and two electrode plates, wherein the placement table includes a hollow portion, which is arranged between the two electrode plates, and the plasma processing device also includes: a support member, which is arranged in the orthographic projection area of ​​the plane where the hollow portion is located in the vertical direction, and is used to support the workpiece to be processed placed on the placement table.

[0007] In some exemplary embodiments, the support member is disposed in an orthographic projection area of ​​a non-functional area of ​​the workpiece to be processed.

[0008] In some exemplary embodiments, the support member includes: a plurality of support rods;

[0009] One end of the support rod is arranged on the surface of the electrode plate;

[0010] The other end of the support rod is in contact with the surface of the workpiece to be processed.

[0011] In some exemplary embodiments, the axis of the support rod is perpendicular to the plane where the hollow portion is located.

[0012] In some exemplary embodiments, the cross-sectional shape of one end of the support rod that contacts the surface of the workpiece to be processed includes at least one of the following:

[0013] Circle, triangle, quadrilateral.

[0014] In some exemplary embodiments, the support member includes: a plurality of support bars;

[0015] The support bar is arranged in the hollow part;

[0016] The surface of the support bar is in contact with the surface of the workpiece to be processed.

[0017] In some exemplary embodiments, the plurality of support bars are parallel to each other.

[0018] In some exemplary embodiments, the plurality of support bars include two groups of support bars;

[0019] The support bars in the same group are parallel to each other;

[0020] The support bars in different groups are perpendicular to each other.

[0021] In some exemplary embodiments, the material of the support member includes at least one of the following: ceramic, mica.

[0022] Based on the same inventive concept, a second aspect of the exemplary embodiment of the present disclosure provides a plasma processing method, which is implemented by the plasma processing device as described in the first aspect, and the method includes:

[0023] Placing the workpiece to be processed on the storage table, and allowing the support member to support the workpiece to be processed;

[0024] The workpiece to be processed is subjected to plasma treatment through the two electrode plates.

[0025] From the above, it can be seen that the plasma processing device and method provided by the embodiment of the present disclosure include a placement table and two electrode plates, wherein the placement table includes a hollow portion, which is arranged between the two electrode plates, and the plasma processing device further includes: a support member, which is arranged in the vertical projection area of ​​the plane where the hollow portion is located, and is used to support the workpiece to be processed placed on the placement table. The support member provides support for the part of the workpiece to be processed placed on the placement table that is exposed in the hollow portion, so that the workpiece to be processed can maintain a horizontal state, so that the distance between the workpiece to be processed and the electrode plate on the side at different positions on the same surface is the same, thereby avoiding the large difference in plasma processing effects between the middle and the edge caused by the workpiece to be processed drooping due to gravity, reducing the difference between the plasma processing effects at different positions of the workpiece to be processed, and improving the uniformity of the plasma processing effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] In order to more clearly illustrate the technical solutions in the present disclosure or related technologies, the drawings required for use in the embodiments or related technical descriptions are briefly introduced below. Obviously, the drawings described below are only embodiments of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0027] Figure 1 A schematic structural diagram of a plasma processing device provided for an exemplary embodiment of the present disclosure;

[0028] Figure 2 A schematic diagram of a plasma treatment effect provided for an exemplary embodiment of the present disclosure;

[0029] Figure 3 Another schematic structural diagram of a plasma processing device provided for an exemplary embodiment of the present disclosure;

[0030] Figure 4 Another schematic structural diagram of a plasma processing device provided for an exemplary embodiment of the present disclosure;

[0031] Figure 5 A schematic diagram of the arrangement position of a support member provided for an exemplary embodiment of the present disclosure;

[0032] Figure 6 Another schematic structural diagram of a plasma processing device provided for an exemplary embodiment of the present disclosure;

[0033] Figure 7 Another schematic structural diagram of a plasma processing device provided for an exemplary embodiment of the present disclosure;

[0034] Figure 8Another schematic diagram of the arrangement position of the support member provided for the exemplary embodiment of the present disclosure;

[0035] Fig. 9 Another schematic diagram of the arrangement position of the support member provided for the exemplary embodiment of the present disclosure;

[0036] Fig.10 Another schematic diagram of the arrangement position of the support member provided for the exemplary embodiment of the present disclosure;

[0037] Fig.11 A schematic flow chart of a plasma treatment method provided for an exemplary embodiment of the present disclosure. DETAILED DESCRIPTION

[0038] In order to make the purpose, technical solutions and advantages of the present disclosure more clear, the principles and spirit of the present disclosure will be described with reference to several exemplary embodiments. It should be understood that these embodiments are provided only to enable those skilled in the art to better understand and implement the present disclosure, and are not intended to limit the scope of the present disclosure in any way. On the contrary, these embodiments are provided to make the present disclosure more thorough and complete, and to fully convey the scope of the present disclosure to those skilled in the art.

[0039] It should be understood herein that any number of elements in the drawings is for illustration rather than limitation, and any naming is only for distinction rather than having any limiting meaning.

[0040] It should be noted that, unless otherwise defined, the technical terms or scientific terms used in the embodiments of the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the embodiments of the present disclosure do not represent any order, quantity or importance, but are only used to distinguish different components. "Including" or "comprising" and similar words mean that the elements or objects appearing in front of the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. "Connecting" or "connected" and similar words are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly. The article "one" or "a" before an element does not exclude the existence of multiple such elements.

[0041] The principle and spirit of the present disclosure are explained in detail below with reference to several representative embodiments of the present disclosure.

[0042] refer to Figure 1The plasma processing apparatus provided in this exemplary embodiment includes a placement table 100 and two electrode plates 200 .

[0043] The storage platform 100 is used to carry the workpiece 300 to be processed.

[0044] The object to be processed 300 includes a glass back plate.

[0045] The placement table 100 specifically includes a hollow portion 102 for exposing a region of the workpiece 300 to be processed by plasma.

[0046] The two electrode plates 200 are respectively arranged on both sides of the plane where the storage table is located, and are used to provide an electric field for plasma processing.

[0047] The two electrode plates 200 specifically include a first electrode plate 202 and a second electrode plate 204 .

[0048] One of the first electrode plate 202 and the second electrode plate 204 is an anode plate, and the other electrode plate is a cathode plate. For example, when the first electrode plate 202 is an anode plate, the second electrode plate 204 is a cathode plate; when the first electrode plate 202 is a cathode plate, the second electrode plate 204 is an anode plate.

[0049] Among them, since the size of the workpiece 300 to be processed is relatively large (for example, the length and width are both about 1m to 2m), the workpiece 300 to be processed cannot remain in a horizontal state due to the influence of gravity, and sags, resulting in different distances between the workpiece 300 and the electrode plate on that side at different positions on the same surface, especially the distance difference between the middle area and the edge area is relatively large.

[0050] As a specific example, see Figure 1 , the distance h1 between the edge area of ​​the workpiece 300 to be processed and the first electrode plate 202 is much smaller than the distance h3 between the middle area of ​​the workpiece 300 to be processed and the first electrode plate 202;

[0051] The distance h2 between the edge area of ​​the workpiece 300 to be processed and the second electrode plate 204 is much greater than the distance h4 between the middle area of ​​the workpiece 300 to be processed and the second electrode plate 204 .

[0052] Since different positions of the workpiece 300 on the same surface are at different distances from the electrode plate on that side, there are differences in the plasma treatment effects of the workpiece 300 at different positions on the same surface, especially the differences in the plasma treatment effects between the middle area and the edge area.

[0053] As a specific example, see Figure 2, showing the plasma treatment effect at different positions on the same surface of the workpiece 300 to be treated, wherein the numerical values ​​(e.g., 1.11, 1.05, 0.82, 0.68, etc.) are used to represent the normalized performance indicators (e.g., product life) for evaluating the plasma treatment effect of the area. Specifically, the plasma treatment effect in the central area (e.g., 0.82, 0.68, etc.) is much worse than the plasma treatment effect in the edge area (e.g., 1.11, 1.05, etc.).

[0054] In order to avoid the large difference in plasma treatment effects between the middle and the edge of the workpiece to be treated due to the drooping of gravity, reduce the difference between the plasma treatment effects at different positions of the workpiece to be treated, and improve the uniformity of the plasma treatment effect, the present invention provides support for the exposed part of the hollow portion of the workpiece to be treated placed on the storage table by adding a support member, so that the workpiece to be treated can maintain a horizontal state, so that the distance between the workpiece to be treated and the electrode plate on the side at different positions on the same surface is the same, thereby improving the uniformity of the plasma treatment effect.

[0055] It should be noted that the present disclosure is particularly suitable for workpieces to be processed that are larger in size. In the above exemplary embodiments, the size of the workpiece to be processed is taken as an example of a length and width of about 1m to 2m. In other embodiments, the size of the workpiece to be processed can be about 2m to 3m in length and width.

[0056] refer to Figure 3 The plasma processing apparatus provided in this exemplary embodiment includes a placement table 100 and two electrode plates 200 .

[0057] The storage platform 100 is used to carry the workpiece 300 to be processed.

[0058] The object to be processed 300 includes a glass back plate.

[0059] The placement table 100 specifically includes a hollow portion 102 for exposing a region of the workpiece 300 to be processed by plasma.

[0060] The two electrode plates 200 are respectively arranged on both sides of the plane where the storage table is located, and are used to provide an electric field for plasma processing.

[0061] The two electrode plates 200 specifically include a first electrode plate 202 and a second electrode plate 204 .

[0062] One of the first electrode plate 202 and the second electrode plate 204 is an anode plate, and the other electrode plate is a cathode plate. For example, when the first electrode plate 202 is an anode plate, the second electrode plate 204 is a cathode plate; when the first electrode plate 202 is a cathode plate, the second electrode plate 204 is an anode plate.

[0063] The plasma processing apparatus provided in this exemplary embodiment further includes a support member 400 , which is disposed in the orthographic projection area of ​​the plane where the hollow portion 102 is located in the vertical direction, and is used to support the workpiece 300 to be processed placed on the placement table 100 .

[0064] The support member 400 provides support for the exposed portion of the hollow portion 102 of the workpiece 300 placed on the storage table 100, so that the workpiece 300 can remain in a horizontal state, so that the distance between the workpiece 300 and the electrode plate 200 on the same side at different positions on the same surface is the same.

[0065] As a specific example, see Figure 4 , the distance h1 between the edge area of ​​the workpiece 300 to be processed and the first electrode plate 202 is equal to the distance h3 between the middle area of ​​the workpiece 300 to be processed and the first electrode plate 202;

[0066] The distance h2 between the edge area of ​​the workpiece 300 to be processed and the second electrode plate 204 is equal to the distance h4 between the middle area of ​​the workpiece 300 to be processed and the second electrode plate 204 .

[0067] Since the distances between the workpiece 300 to be processed and the electrode plate 200 on that side at different positions on the same surface are the same, the large difference in plasma treatment effects between the middle and the edge caused by the workpiece 300 to sag due to gravity is avoided, the difference between the plasma treatment effects at different positions of the workpiece 300 to be processed is reduced, and the uniformity of the plasma treatment effect is improved.

[0068] In this exemplary embodiment, the support member 400 includes: a plurality of support rods;

[0069] One end of the support rod is disposed on the surface of the electrode plate 200;

[0070] The other end of the support rod is in contact with the surface of the workpiece 300 to be processed.

[0071] In this exemplary embodiment, the axis of the support rod is perpendicular to the plane where the hollow portion 102 is located.

[0072] In this exemplary embodiment, the cross-sectional shape of one end of the support rod that is in contact with the surface of the workpiece 300 includes at least one of the following:

[0073] Circle, triangle, quadrilateral.

[0074] In this exemplary embodiment, the material of the support member 400 includes at least one of the following: ceramic and mica.

[0075] When the material of the support member 400 is ceramic or mica, it will not affect the gas flow and electric field in the chamber of the plasma processing device.

[0076] The support member 400 may also be made of other materials other than ceramic and mica that do not affect the gas flow and electric field in the chamber of the plasma processing device.

[0077] In this exemplary embodiment, the support member 400 is disposed in the orthographic projection area of ​​the non-functional area of ​​the workpiece 300 to be processed.

[0078] Among them, the workpiece 300 to be processed is usually a larger plate. After the plasma treatment is completed, the larger plate will be cut into several smaller plates (i.e., functional areas). Among them, the area between several smaller plates in the larger plate is reserved for cutting, i.e., the non-functional area.

[0079] As a specific example, see Figure 5 There are 4 functional areas in the workpiece 300 to be processed.

[0080] It is understandable that in an actual production process, the workpiece 300 to be processed usually has a large number of functional areas. This example uses four functional areas as an example for the convenience of description.

[0081] The workpiece 300 to be processed is a rectangle, and between the four functional regions in the workpiece 300 there is a non-functional region 302 extending along the long side of the rectangle, and there is also a non-functional region 302 extending along the short side of the rectangle.

[0082] The support member 400 is disposed in the orthographic projection area of ​​the non-functional area 302 of the workpiece 300 to be processed.

[0083] refer to Figure 6 The plasma processing apparatus provided in this exemplary embodiment includes a placement table 100 and two electrode plates 200 .

[0084] The storage platform 100 is used to carry the workpiece 300 to be processed.

[0085] The object to be processed 300 includes a glass back plate.

[0086] The placement table 100 specifically includes a hollow portion 102 for exposing a region of the workpiece 300 to be processed by plasma.

[0087] The two electrode plates 200 are respectively arranged on both sides of the plane where the storage table is located, and are used to provide an electric field for plasma processing.

[0088] The two electrode plates 200 specifically include a first electrode plate 202 and a second electrode plate 204 .

[0089] One of the first electrode plate 202 and the second electrode plate 204 is an anode plate, and the other electrode plate is a cathode plate. For example, when the first electrode plate 202 is an anode plate, the second electrode plate 204 is a cathode plate; when the first electrode plate 202 is a cathode plate, the second electrode plate 204 is an anode plate.

[0090] The plasma processing apparatus provided in this exemplary embodiment further includes a support member 400 , which is disposed in the orthographic projection area of ​​the plane where the hollow portion 102 is located in the vertical direction, and is used to support the workpiece 300 to be processed placed on the placement table 100 .

[0091] The support member 400 provides support for the exposed portion of the hollow portion 102 of the workpiece 300 placed on the storage table 100, so that the workpiece 300 can remain in a horizontal state, so that the distance between the workpiece 300 and the electrode plate 200 on the same side at different positions on the same surface is the same.

[0092] As a specific example, see Figure 7 , the distance h1 between the edge area of ​​the workpiece 300 to be processed and the first electrode plate 202 is equal to the distance h3 between the middle area of ​​the workpiece 300 to be processed and the first electrode plate 202;

[0093] The distance h2 between the edge area of ​​the workpiece 300 to be processed and the second electrode plate 204 is equal to the distance h4 between the middle area of ​​the workpiece 300 to be processed and the second electrode plate 204 .

[0094] Since the distances between the workpiece 300 to be processed and the electrode plate 200 on that side at different positions on the same surface are the same, the large difference in plasma treatment effects between the middle and the edge caused by the workpiece 300 to sag due to gravity is avoided, the difference between the plasma treatment effects at different positions of the workpiece 300 to be processed is reduced, and the uniformity of the plasma treatment effect is improved.

[0095] In this exemplary embodiment, the support member 400 includes: a plurality of support bars;

[0096] The support bar is disposed in the hollow portion 102;

[0097] The surface of the support bar is in contact with the surface of the workpiece 300 to be processed.

[0098] In this exemplary embodiment, the plurality of support bars are parallel to each other.

[0099] In this exemplary embodiment, the plurality of support bars include two groups of support bars;

[0100] The support bars in the same group are parallel to each other;

[0101] The support bars in different groups are perpendicular to each other.

[0102] In this exemplary embodiment, the material of the support member 400 includes at least one of the following: ceramic and mica.

[0103] When the material of the support member 400 is ceramic or mica, it will not affect the gas flow and electric field in the chamber of the plasma processing device.

[0104] The support member 400 may also be made of other materials other than ceramic and mica that do not affect the gas flow and electric field in the chamber of the plasma processing device.

[0105] In this exemplary embodiment, the support member 400 is disposed in the orthographic projection area of ​​the non-functional area of ​​the workpiece 300 to be processed.

[0106] Among them, the workpiece 300 to be processed is usually a larger plate. After the plasma treatment is completed, the larger plate will be cut into several smaller plates (i.e., functional areas). Among them, the area between several smaller plates in the larger plate is reserved for cutting, i.e., the non-functional area.

[0107] As a specific example, see Figure 8 There are 4 functional areas in the workpiece 300 to be processed.

[0108] It is understandable that in an actual production process, the workpiece 300 to be processed usually has a large number of functional areas. This example uses four functional areas as an example for the convenience of description.

[0109] The workpiece 300 to be processed is a rectangle, and between the four functional regions in the workpiece 300 there is a non-functional region 302 extending along the long side of the rectangle, and there is also a non-functional region 302 extending along the short side of the rectangle.

[0110] The support member 400 is disposed in the orthographic projection area of ​​the non-functional area 302 of the workpiece 300 extending along the long side of the rectangle.

[0111] As a specific example, see Fig. 9 There are 4 functional areas in the workpiece 300 to be processed.

[0112] It is understandable that in an actual production process, the workpiece 300 to be processed usually has a large number of functional areas. This example uses four functional areas as an example for the convenience of description.

[0113] The workpiece 300 to be processed is a rectangle, and between the four functional regions in the workpiece 300 there is a non-functional region 302 extending along the long side of the rectangle, and there is also a non-functional region 302 extending along the short side of the rectangle.

[0114] The support member 400 is disposed in the orthographic projection area of ​​the non-functional area 302 of the workpiece 300 extending along the short side of the rectangle.

[0115] As a specific example, see Fig.10 There are 4 functional areas in the workpiece 300 to be processed.

[0116] It is understandable that in an actual production process, the workpiece 300 to be processed usually has a large number of functional areas. This example uses four functional areas as an example for the convenience of description.

[0117] The workpiece 300 to be processed is a rectangle, and between the four functional regions in the workpiece 300 there is a non-functional region 302 extending along the long side of the rectangle, and there is also a non-functional region 302 extending along the short side of the rectangle.

[0118] The support members 400 are respectively disposed in the non-functional area 302 extending along the long side of the rectangle and the orthographic projection area of ​​the non-functional area 302 extending along the short side of the rectangle of the workpiece 300 to be processed.

[0119] Based on the same inventive concept, corresponding to any of the above-mentioned embodiment devices, the present disclosure also provides a plasma processing method.

[0120] refer to Fig.11 , a plasma treatment method comprising the following steps:

[0121] Step S710: placing the workpiece to be processed on the storage table, and allowing the support member to support the workpiece to be processed.

[0122] Wherein, the part to be processed includes a glass back panel.

[0123] Step S720: performing plasma treatment on the workpiece to be processed by using the two electrode plates.

[0124] The method of the above embodiment is implemented by the corresponding plasma processing device in any of the above embodiments, and has the beneficial effects of the corresponding device embodiment, which will not be described in detail here.

[0125] Those skilled in the art should understand that the discussion of any of the above embodiments is merely illustrative and is not intended to imply that the scope of the present application (including the claims) is limited to these examples. In line with the concept of the present application, the technical features in the above embodiments or different embodiments may be combined, the steps may be implemented in any order, and there are many other variations of the different aspects of the embodiments of the present application as described above, which are not provided in detail for the sake of simplicity.

[0126] Although the present application has been described in conjunction with specific embodiments thereof, many alternatives, modifications and variations of these embodiments will be apparent to those skilled in the art in light of the foregoing description.

[0127] The embodiments of the present application are intended to cover all such substitutions, modifications and variations that fall within the broad scope of the appended claims. Therefore, any omissions, modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the embodiments of the present application should be included in the scope of protection of the present application.

[0128] Although the spirit and principle of the present disclosure have been described with reference to several specific embodiments, it should be understood that the present disclosure is not limited to the disclosed specific embodiments, and the division of various aspects does not mean that the features in these aspects cannot be combined to benefit, and such division is only for the convenience of expression. The present disclosure is intended to cover various modifications and equivalent arrangements included in the spirit and scope of the attached claims. The scope of the attached claims conforms to the broadest interpretation, thereby including all such modifications and equivalent structures and functions.

Claims

1. A plasma processing device, comprising a storage platform and two electrode plates, wherein the storage platform comprises a hollow portion disposed between the two electrode plates, characterized in that: The plasma processing device further includes: a support member, which is arranged in the orthographic projection area of ​​the plane where the hollow portion is located in the vertical direction, and is used to support the workpiece to be processed placed on the placement table.

2. The plasma processing device according to claim 1, characterized in that: The support member is arranged in the orthographic projection area of ​​the non-functional area of ​​the workpiece to be processed.

3. The plasma processing device according to claim 1, characterized in that: The support member comprises: a plurality of support rods; One end of the support rod is arranged on the surface of the electrode plate; The other end of the support rod is in contact with the surface of the workpiece to be processed.

4. The plasma processing device according to claim 3, characterized in that: The axis of the support rod is perpendicular to the plane where the hollow portion is located.

5. The plasma processing device according to claim 3, characterized in that: The cross-sectional shape of one end of the support rod that contacts the surface of the workpiece to be processed includes at least one of the following: Circle, triangle, quadrilateral.

6. The plasma processing device according to claim 1, characterized in that: The support member comprises: a plurality of support bars; The support bar is arranged in the hollow part; The surface of the support bar is in contact with the surface of the workpiece to be processed.

7. The plasma processing device according to claim 6, characterized in that: The plurality of support bars are parallel to each other.

8. The plasma processing device according to claim 6, characterized in that: The plurality of support bars include two groups of support bars; The support bars in the same group are parallel to each other; The support bars in different groups are perpendicular to each other.

9. The plasma processing device according to claim 1, characterized in that: The material of the support member includes at least one of the following: ceramic and mica.

10. A plasma treatment method, characterized in that: The method is implemented by the plasma processing device according to any one of claims 1 to 9, comprising: Placing the workpiece to be processed on the storage table, and allowing the support member to support the workpiece to be processed; The workpiece to be processed is subjected to plasma treatment through the two electrode plates.

Citation Information

Patent Citations

  • Support mechanism for machining double-sided ITO (Indium Tin Oxide) glass

    CN103663994A

  • Base and physical vapor deposition device

    CN107227448A

  • Heating base in semiconductor process equipment and semiconductor process equipment

    CN112331609A

  • Film layer growth equipment and film layer growth method

    CN114059044A

  • Semiconductor processing separator and semiconductor processing apparatus

    CN117821920A