Plasma production assembly and thin film deposition equipment

Abstract

The invention provides a plasma production assembly and thin film deposition equipment, the plasma production assembly comprises a covering piece, a radio frequency piece and at least one magnetic piece, and the covering piece defines a reaction cavity; the radio frequency part is fixedly arranged on the outer surface of the covering part along the circumferential direction of the covering part and is used for generating a plasma area in the reaction cavity; the magnetic part is movably arranged on the periphery of the outer side of the radio frequency part and is used for deviating from the plasma area. According to the invention, the periphery of the outer side of the radio frequency part is provided with at least one magnetic part, and the position of the plasma area is adjusted by adjusting the position of the magnetic part and / or the magnetic pole of the magnetic part and / or the magnetic intensity of the magnetic part, so that the thickness of a film formed on the surface of a wafer is adjusted. The uniformity of the film thickness of the film deposited on the wafer surface is improved, and the product quality is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor production, and in particular to a plasma production component and a thin film deposition device. Background Art

[0002] With the development of intelligence, semiconductors are used more and more. They are used in integrated circuits, consumer electronics, communication systems, photovoltaic power generation, lighting, high-power power conversion and other fields. Most electronic products, such as computers, mobile phones or digital recorders, have a very close relationship with semiconductors in their core units. Among them, semiconductor production technology includes thin film deposition technology, which deposits layers of thin films on the surface of the wafer to create micro devices inside the chip.

[0003] In current thin film deposition equipment, PECVD or PEALD technology is used, and radio frequency is used to generate plasma to excite chemical sources. In actual use, due to the limitations of the reaction chamber structure, the film layer on the wafer surface will have eccentric sites, resulting in low film uniformity of the thin film deposited on the wafer surface. Summary of the invention

[0004] The embodiments of the present invention provide a plasma production component and a thin film deposition device to adjust the film thickness of the film formed on the surface of the wafer, improve the uniformity of the film thickness of the thin film deposited on the surface of the wafer, and improve the product quality.

[0005] The present invention provides a plasma production assembly, comprising:

[0006] A cover member, wherein the cover member encloses and forms a reaction chamber;

[0007] A radio frequency component, wherein the radio frequency component is fixedly mounted on the outer surface of the cover member along the circumference of the cover member, and is used to generate a plasma region in the reaction chamber;

[0008] At least one magnetic component is movably disposed around the outer side of the radio frequency component and is used to deviate the plasma region.

[0009] In the plasma production assembly provided by the present invention, the magnetic members are provided in a plurality of groups, the plurality of groups of magnetic members are arranged at intervals along the circumference of the cover member, and the two magnetic members in the same group are arranged oppositely on both sides of the cover member.

[0010] In the plasma production assembly provided by the present invention, the magnetic poles of the two magnetic members in the same group are opposite to each other.

[0011] In the plasma production component provided by the present invention, the plasma production component further comprises a protective cover, the protective cover is arranged to form a closed space, and the cover component, the radio frequency component and the magnetic component are all located in the closed space.

[0012] In the plasma production assembly provided by the present invention, the magnetic member is movably disposed on the inner wall of the protective cover and is extended along the height direction of the protective cover.

[0013] In the plasma production assembly provided by the present invention, an air inlet channel is provided at the top of the cover member, and the air inlet channel is used to connect the reaction chamber and the air inlet pipeline.

[0014] In the plasma production assembly provided by the present invention, the cover member is a semi-spherical structure.

[0015] In the plasma production assembly provided by the present invention, the magnetic component is a magnet or an electromagnet.

[0016] The present invention also provides a thin film deposition device, which comprises any one of the plasma production components described above.

[0017] In the thin film deposition equipment provided by the present invention, the thin film deposition equipment also includes a cavity and a shower plate, the plasma production component is fixed at the upper end of the cavity, and the shower plate is fixed at the top of the cavity and connects the reaction chamber and the inside of the cavity.

[0018] The present invention provides a plasma production component and a thin film deposition device, wherein the plasma production component includes a cover member, a radio frequency member and at least one magnetic member, wherein the cover member encloses a reaction chamber; the radio frequency member is fixedly arranged on the outer surface of the cover member along the circumference of the cover member, and is used to generate a plasma region in the reaction chamber; the magnetic member is movably arranged around the outer side of the radio frequency member, and is used to offset the plasma region. The present application provides at least one magnetic member around the outer side of the radio frequency member, and by adjusting the position of the magnetic member and / or the magnetic pole of the magnetic member and / or the magnetic strength of the magnetic member, the position of the plasma region is adjusted, and then the film thickness of the film formed on the wafer surface is adjusted, thereby improving the uniformity of the film thickness of the thin film deposited on the wafer surface and improving the product quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying any creative work.

[0020] Figure 1a-Figure 1c These are cross-sectional views of the current thin film deposition equipment;

[0021] Figure 2a-2c Each cross-sectional view of a thin film deposition device provided with a group of magnetic components in an embodiment of the present invention;

[0022] Figure 3a-Figure 3b The structure diagram of the thin film deposition device at various angles in the embodiment of the present invention;

[0023] Figure 4 A perspective view of a thin film deposition device according to an embodiment of the present invention having three sets of magnetic components;

[0024] Figure 5a-5c 1 are cross-sectional views of a thin film deposition device according to an embodiment of the present invention having three groups of magnetic components.

[0025] The reference numerals in the figures are:

[0026] 1. Plasma production components; 10. Covering parts; 11. Reaction chamber; 12. Air inlet channel; 20. Radio frequency parts; 30. Magnetic parts; 40. Protective cover; 41. Enclosed space; 2. Cavity; 3. Spray plate; 4. Heating plate. DETAILED DESCRIPTION

[0027] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. Now, in conjunction with the accompanying drawings, the preferred embodiments of the present invention are described in detail.

[0028] Reference Figures 2a to 5c As shown, it shows an embodiment of the plasma production component 1 and thin film deposition equipment of the present invention. The plasma production component 1 includes a cover member 10, a radio frequency component 20 and at least one magnetic component 30, the cover member 10 encloses a reaction chamber 11; the radio frequency component 20 is fixedly arranged on the outer surface of the cover member 10 along the circumference of the cover member 10, and is used to generate a plasma region in the reaction chamber 11; the magnetic component 30 is movably arranged around the outer side of the radio frequency component 20, and is used to offset the plasma region.

[0029] Specifically, refer to Figure 1a to Figure 1cAs shown, in the semiconductor production process, thin film deposition is one of the important stages. The thin film deposition technology includes plasma enhanced chemical vapor deposition technology (PECVD) and plasma enhanced atomic layer deposition technology (PEALD). The gas molecules are excited by plasma to cause them to undergo chemical reactions on the substrate surface, thereby depositing a thin film. Therefore, the thin film deposition equipment includes a plasma production component 1, which is used to generate plasma. In current thin film deposition equipment, PECVD or PEALD technology is used, and radio frequency is used to generate plasma to excite chemical sources. In actual use, due to the limitation of the reaction chamber 11 structure, the film layer on the wafer surface will have eccentric sites, thereby causing the film layer uniformity of the thin film deposited on the wafer surface to be low.

[0030] The plasma production component 1 includes a cover member 10 and a radio frequency component 20. The cover member 10 encloses a reaction chamber 11. The reaction chamber 11 is an ionization area for reaction gas. The reaction gas enters the reaction chamber 11 and is ionized to generate plasma. The radio frequency component 20 is fixed on the cover member 10. The radio frequency component 20 is located on the outer surface of the cover member 10 and is extended along the circumference of the cover member 10. The radio frequency component 20 is used to generate a plasma area in the reaction chamber 11. An alternating current is passed through the radio frequency component 20. The alternating current generates an alternating magnetic field. The alternating magnetic field generates alternating electric current in the reaction chamber 11, thereby forming a plasma area in the reaction chamber 11. When the reaction gas flows through the plasma area, the reaction gas is ionized to generate plasma, thereby causing the reaction gas to undergo a chemical reaction in the thin film deposition chamber to generate a thin film on the wafer surface.

[0031] At the same time, the plasma production component 1 also includes at least one magnetic component 30, which is movably arranged around the outer side of the RF component 20 along the circumferential direction of the RF component 20. The magnetic component 30 has magnetism. The plasma region is offset by adjusting the position of the magnetic component 30 and / or the magnetic pole of the magnetic component 30 and / or the magnetic strength of the magnetic component 30. Under the action of the magnetic component 30, the alternating magnetic field generated by the RF component 20 after power is turned on will produce eccentricity, thereby affecting the plasma region formed by the RF component 20, causing the plasma region to be eccentric, so as to offset the plasma region to a specified position, thereby affecting the film thickness of the film formed on the wafer surface, so as to achieve the purpose of adjusting the uniformity of the film thickness.

[0032] There is no specific limit to the number of the magnetic parts 30, but multiple magnetic parts 30 will enhance the offset effect. The influence area of ​​a single magnetic part 30 is limited. If the plasma area to be changed is small, a single magnetic part 30 can be used; when there is only one magnetic part 30, the magnetic part 30 moves circumferentially around the RF part 20, and / or adjusts the magnetic poles of the magnetic part 30, and / or the magnetic strength of the magnetic part 30 to adjust the plasma area in the reaction chamber 11 to a specified position; when there are multiple magnetic parts 30, the positions of the multiple magnetic parts 30 are adjusted together to make the multiple magnetic parts 30 move circumferentially around the RF part 20, and / or adjust the magnetic poles of the multiple magnetic parts 30, and / or adjust the magnetic strength of the multiple magnetic parts 30, so as to jointly adjust the plasma area in the reaction chamber 11 to a specified position.

[0033] In the present application, at least one magnetic component 30 is provided around the outer side of the radio frequency component 20. By adjusting the position of the magnetic component 30 and / or the magnetic pole of the magnetic component 30 and / or the magnetic strength of the magnetic component 30, the position of the plasma region is adjusted, and then the film thickness of the film formed on the wafer surface is adjusted, thereby improving the uniformity of the film thickness of the thin film deposited on the wafer surface and improving product quality.

[0034] In one embodiment, referring to Figure 4 to Figure 5c As shown, the magnetic members 30 are provided in a plurality of groups, and the plurality of groups of the magnetic members 30 are arranged at intervals along the circumferential direction of the cover member 10 , and two magnetic members 30 in the same group are arranged on both sides of the cover member 10 opposite to each other. Specifically, the magnetic member 30 is provided with a plurality of groups, and the plurality of groups of magnetic members 30 are arranged around the cover member 10 at intervals along the circumference of the cover member 10, and the plurality of groups of magnetic members 30 are located on the outside of the radio frequency member 20. The more groups of the magnetic members 30 there are, the higher the control accuracy of the offset of the plasma region can be, and the offset of the plasma region can be precisely controlled by adjusting the position of each group of the magnetic members 30, and / or adjusting the magnetic pole strength of each group of the magnetic members 30, and / or adjusting the magnetism of the magnetic poles of each group of the magnetic members 30, thereby improving the uniformity of the film thickness; at the same time, when the magnetic members 30 are used in groups, they need to be aligned, that is, the two magnetic members 30 in the same group need to be relatively arranged on both sides of the cover member 10, and the two magnetic members 30 in the same group are located in a radial direction of the cover member 10, so that magnetic flux lines are generated between the two magnetic members 30, and the plasma region is offset along the magnetic flux lines, and the offset effect is optimal, further improving the uniformity of the film thickness and improving the product quality.

[0035] In a specific embodiment, the magnetic poles of the two magnetic members 30 in the same group are opposite to each other (not shown in the figure). Specifically, the magnetic member 30 is extended along the height direction of the cover member 10 and arranged around the cover member 10, the two poles of the magnetic member 30 are arranged adjacent to each other, and each pole is extended from top to bottom, one magnetic pole of the magnetic member 30 faces the center of the cover member 10, and the other magnetic pole faces the position away from the center of the cover member 10, that is, the two poles of the magnetic member 30 are arranged left and right along the radial direction of the cover member 10, and the magnetic poles of the two magnetic members 30 in the same group facing the center of the cover member 10 are opposite to each other, that is, the magnetic poles of the two magnetic members 30 located on the opposite sides of the cover member 10 are opposite, and the two magnetic members 30 in the same group form magnetic lines of force, so that the plasma region is eccentric along the magnetic lines of force, thereby improving the accuracy of offsetting the plasma region.

[0036] In one embodiment, referring to Figures 2a to 5c As shown, the plasma production assembly 1 further includes a protective cover 40 , which is arranged to form a closed space 41 , and the cover component 10 , the radio frequency component 20 and the magnetic component 30 are all located in the closed space 41 . Specifically, the plasma production component 1 is fixed above the cavity 2 of the thin film deposition equipment, the bottom end of the reaction chamber 11 is communicated with the internal thin film deposition space of the cavity 2, the cover member 10 is fixed above the cavity 2, and the bottom end of the cover member 10 is communicated with the internal space of the cavity 2, a protective cover 40 is added to the outside of the cover member 10, and the protective cover 40 encloses a closed space 41, and the closed space 41 is used to seal the cover member 10, the radio frequency component 20 and the magnetic component 30, that is, the cover member 10, the radio frequency component 20 and the magnetic component 30 are all located in the closed space 41 to protect the internal structure of the plasma production component 1, and further seal the reaction gas to prevent the reaction gas from leaking from the cover member 10 to the outside of the cover member 10 after passing into the cover member 10, thereby improving the safety of the plasma production component 1.

[0037] In a specific embodiment, refer to Figures 2a to 5cAs shown, the magnetic component 30 is movably arranged on the inner wall of the protective cover 40 and is extended along the height direction of the protective cover 40. Specifically, the protective cover 40 is used to protect the internal structural components of the plasma production component 1. The cover component 10, the radio frequency component 20 and the magnetic component 30 are all located inside the protective cover 40. In this embodiment, the magnetic component 30 is connected to the protective cover 40, and the magnetic component 30 is arranged on the inner wall of the protective cover 40, thereby improving the integration of the plasma production component 1 and reducing the volume of the plasma production component 1; and the magnetic component 30 can move along the circumference of the protective cover 40 relative to the protective cover 40, so that the position of the plasma region can be adjusted according to the position of the magnetic component 30, thereby improving the uniformity of the film thickness.

[0038] In one embodiment, referring to Figures 2a to 5c As shown, an air inlet channel 12 is provided at the top of the cover member 10, and the air inlet channel 12 is used to connect the reaction chamber 11 and the air inlet pipe. Specifically, the cover member 10 is a gas cover, that is, a cover of the reaction chamber 11. The cover member 10 itself is made of quartz and does not participate in the radio frequency reaction. Therefore, an air inlet channel 12 is provided at the top of the cover member 10, and the air inlet channel 12 is used to connect the reaction chamber 11 and the air inlet pipe. The reaction gas flows along the air inlet pipe, and the air inlet pipe guides the reaction gas to the air inlet channel 12 and finally flows into the reaction chamber 11. By providing the air inlet channel 12 to connect the air inlet pipe and the reaction chamber 11, the fluidity of the reaction gas and the sealing of the reaction gas flow path are improved, and at the same time, the assembly efficiency of the air inlet pipe and the reaction chamber 11 is improved.

[0039] More specifically, the air intake passage 12 is disposed in the protective cover 40 along a direction parallel to the ground, and the air intake passage 12 passes through the protective cover 40 to be connected with the air intake pipe.

[0040] In a specific embodiment, refer to Figures 2a to 5c As shown, the cover member 10 is a semi-spherical structure. Specifically, the cover member 10 encloses a reaction chamber 11 so that the reaction gas is ionized in the reaction chamber 11. The cover member 10 is set as a semi-spherical structure, which is convenient for fixing the radio frequency component 20 on the cover member 10, and the radio frequency component 20 is arranged around the cover member 10. The radio frequency component 20 can be provided in plurality, and is fixed on the outer surface of the cover member 10 from top to bottom. The cover member 10 is a semi-spherical structure, thereby saving the cost of the radio frequency component 20, and the reaction chamber 11 has a large volume, the cover member 10 occupies a small area, and has a higher degree of integration.

[0041] More specifically, the RF component 20 can be a metal with high conductivity. In the present embodiment, the RF component 20 uses a copper ring, and an alternating current is passed through the copper ring. The alternating current generates an alternating magnetic field, and the alternating magnetic field generates alternating electric current in the cover component 10, thereby ionizing the gas and generating plasma. The number of the copper rings is not limited, and the reference number is 2-10. The larger the number, the larger the current required and the greater the plasma energy.

[0042] In one embodiment, the magnetic component 30 is a magnet or an electromagnet. Specifically, the magnetic component 30 refers to a structural component with magnetic poles. In this embodiment, the magnetic component 30 refers to a magnet or an electromagnet. Magnetic poles are added around the cover component 10 to change the alternating magnetic field generated by the radio frequency component 20 under the action of radio frequency. The alternating magnetic field is a plasma region. The reaction gas is ionized in the plasma region. The alternating magnetic field changes, causing the magnetic field generated by it to be eccentric, thereby affecting the region where the radio frequency generates free radicals and the film thickness of the film formed on the wafer surface, thereby achieving the purpose of adjusting the uniformity and eccentricity of the film thickness.

[0043] When the magnetic member 30 is a magnet, the magnet is movably disposed on the inner wall of the protective cover 40, and when there are multiple magnets, the multiple magnets are spaced apart on the protective cover 40, and the multiple magnets can be evenly disposed, or spaced apart according to actual needs, which is not limited here; and the number of the magnets can also be increased or decreased according to the precision of control required, and the more the number of the magnets, the higher the control precision of the plasma region. In this embodiment, the alternating magnetic field is changed by changing the position of the magnet or the magnetic pole of the magnet, so that the plasma region is eccentric, so that the plasma region is offset to a specified position, which affects the film thickness of the film formed on the surface of the wafer, and achieves the adjustment of the uniformity of the film thickness.

[0044] When the magnetic member 30 is an electromagnet, the electromagnet can be moved or completely fixed on the inner wall of the protective cover 40. When there are multiple electromagnets, the multiple electromagnets are evenly distributed, or the multiple electromagnets do not need to be evenly arranged according to the affected magnetic pole areas, which is not limited here; and the number of the electromagnets can also be increased or decreased according to the required control accuracy. The more the number of the electromagnets, the higher the control accuracy of the plasma area; at the same time, the multiple electromagnets can be independently controlled, by changing the current direction of the electromagnet to change the magnetic pole direction, so as to eccentric the plasma area to adjust the film thickness of the specified area; or by changing the magnetic pole strength of the electromagnet, so as to eccentric the plasma area to adjust the film thickness of the specified area; and the eccentricity of the plasma area can be further adjusted by adjusting the current size of the electromagnet.

[0045] Reference Figures 2a to 5cAs shown, this embodiment also provides a thin film deposition device, which includes a plasma production component 1. The plasma production component 1 can adopt any plasma production component 1 provided by the present invention. Since the previous specification has already made a detailed introduction to the specific structure and working principle of the plasma production component 1, it will not be repeated here for the sake of brevity of the specification.

[0046] The thin film deposition equipment in this embodiment adopts the plasma production component 1 provided by the present invention. The plasma area of ​​the plasma production component 1 can be adjusted by the magnetic component 30, so that the plasma area can be offset to a specified position to adjust the film thickness of the thin film and improve the uniformity of the film thickness after thin film deposition. The operation is simple, thereby making the product quality produced by the thin film deposition equipment high, the adjustment is simple, and the working efficiency is high.

[0047] In one embodiment, referring to Figures 2a to 5c As shown, the thin film deposition device also includes a cavity 2 and a shower plate 3, the plasma production component 1 is fixed at the upper end of the cavity 2, the shower plate 3 is fixed at the top of the cavity 2 and connects the reaction cavity 11 and the interior of the cavity 2. Specifically, the thin film deposition device also includes a cavity 2 and a shower plate 3, the wafer is deposited in the internal space of the cavity 2, the cavity 2 is used for sealing; the shower plate 3 is used to improve the uniformity of the reaction gas when it flows to the wafer, so that the thin film deposition is more uniform; the plasma production component 1 is fixed at the upper end of the cavity 2, the shower plate 3 is fixed at the top of the cavity 2, and the shower plate 3 is used to connect the reaction cavity 11 and the interior of the cavity 2; when the thin film deposition device is started, the reaction gas flows into the reaction cavity 11 from the air inlet pipe, and chemical reactions occur after ionization in the plasma area, and flows to the interior of the cavity 2 through the shower plate 3, and is deposited on the surface of the wafer. The structure of the thin film deposition device is simple, the film thickness and area uniformity of the thin film deposition are higher, and the product quality is improved.

[0048] More specifically, the plasma production assembly 1 is fixed at the upper end of the cavity 2, and a mounting hole is provided at the top of the cavity 2, the mounting hole connects the reaction cavity 11 and the interior of the cavity 2, the spray plate 3 is embedded in the mounting hole, and the spray plate 3 connects the reaction cavity 11 and the interior of the cavity 2, and a heating plate 4 is also provided inside the cavity 2, and the wafer is located on the heating plate 4, and the reaction gas flows from the air intake pipe to the air intake channel 12 to enter the reaction cavity 11, and chemically reacts after being ionized in the plasma region, and flows to the interior of the cavity 2 through the spray plate 3, and is deposited on the surface of the wafer. The thin film deposition equipment has high structural stability.

[0049] The above is only a specific embodiment of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed by the present invention, and these modifications or replacements should be included in the protection scope of the present invention. Therefore, the protection scope of the present invention shall be based on the protection scope of the claims.

Claims

1. A plasma production component, characterized in that include: A cover member, wherein the cover member encloses and forms a reaction chamber; A radio frequency component, wherein the radio frequency component is fixedly mounted on the outer surface of the cover member along the circumference of the cover member, and is used to generate a plasma region in the reaction chamber; At least one magnetic component is movably disposed around the outer side of the radio frequency component and is used to deviate the plasma region.

2. The plasma production assembly according to claim 1, characterized in that The magnetic members are provided in a plurality of groups, and the plurality of groups of magnetic members are arranged at intervals along the circumferential direction of the cover member, and two magnetic members in the same group are arranged oppositely on two sides of the cover member.

3. The plasma production assembly according to claim 2, characterized in that The magnetic poles of the two magnetic members in the same group are opposite to each other.

4. The plasma production assembly according to claim 1, characterized in that The plasma production component further comprises a protective cover, which is arranged to form a closed space, and the cover component, the radio frequency component and the magnetic component are all located in the closed space.

5. The plasma production assembly according to claim 4, characterized in that The magnetic member is movably arranged on the inner wall of the protective cover and is extended along the height direction of the protective cover.

6. The plasma production assembly according to claim 1, characterized in that An air inlet channel is arranged at the top of the cover member, and the air inlet channel is used to connect the reaction chamber and the air inlet pipeline.

7. The plasma production assembly according to claim 1, characterized in that The cover member is a semi-spherical structure.

8. The plasma production assembly according to any one of claims 1 to 7, characterized in that The magnetic member is a magnet or an electromagnet.

9. A thin film deposition device, characterized in that: The invention comprises a plasma production component according to any one of claims 1 to 8.

10. The thin film deposition device according to claim 9, characterized in that: The thin film deposition equipment also includes a cavity and a shower plate. The plasma production component is fixedly arranged at the upper end of the cavity. The shower plate is fixedly arranged at the top of the cavity and connects the reaction cavity and the inside of the cavity.

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