High-frequency module and communication device

Abstract

Provided are a high-frequency module and a communication device with which desired characteristics can be obtained for a plurality of communication bands. The high-frequency module includes a low-noise amplifier, a switch, a first inductor, a second inductor, a first filter, and a second filter. The first inductor is connected between the low noise amplifier and the output terminal of the switch. The second inductor is connected between a path between the first inductor and the output terminal of the switch and the input / output terminal of the switch. The switch is capable of switching between a first state in which a first input terminal connected to the first filter is connected to the output terminal and the input / output terminal is connected to the ground terminal, and a second state in which a second input terminal connected to the second filter is connected to the input / output terminal.

Description

Technical Field

[0001] The invention relates to a high-frequency module and a communication device. Background Art

[0002] In the past, a high-frequency circuit (high-frequency module) capable of supporting multiple communication frequency bands is known (for example, refer to Patent Document 1). The high-frequency circuit described in Patent Document 1 includes a low-noise amplifier, a first inductor, and a second inductor. In the high-frequency circuit described in Patent Document 1, a second inductor connected to the ground is connected to a series circuit of a receiving path, a first inductor, and a low-noise amplifier. In the high-frequency circuit described in Patent Document 1, it is configured to be able to switch whether the first end of the second inductor is connected to the receiving path and the second end is connected to the ground, or the second end of the second inductor is connected to the receiving path and the first end is connected to the ground.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: International Publication No. 2021 / 039061 Summary of the invention

[0006] Problem that the invention aims to solve

[0007] In the high-frequency module of Patent Document 1, it is sometimes difficult to obtain desired characteristics in a plurality of communication frequency bands.

[0008] An object of the present invention is to provide a high-frequency module and a communication device capable of reducing the loss of received signals and reducing the leakage of transmitted signals in a plurality of communication frequency bands.

[0009] Solutions for solving problems

[0010] A high-frequency module according to one embodiment of the present invention comprises a low-noise amplifier, a switch, a first inductor, a second inductor, a first filter and a second filter. The switch has a first input terminal, a second input terminal, an output terminal, an input-output terminal and a ground terminal. The first inductor is connected between the low-noise amplifier and the output terminal. The second inductor is connected between the path between the first inductor and the output terminal and the input-output terminal. The first filter is connected to the first input terminal and has a passband including a receiving band of a first communication frequency band. The second filter is connected to the second input terminal and has a passband including a receiving band of a second communication frequency band. The gap between transmission and reception of the second communication frequency band is wider than the gap between transmission and reception of the first communication frequency band. The switch can switch between a first state and a second state. In the first state of the switch, the first input terminal is connected to the output terminal, the input-output terminal is connected to the ground terminal, and the second input terminal is not connected to the input-output terminal. When the switch is in the second state, the second input terminal is connected to the input-output terminal, the first input terminal is not connected to the output terminal, and the input-output terminal is not connected to the ground terminal.

[0011] In addition, a high-frequency module according to another embodiment of the present invention comprises a low-noise amplifier, a switch, a first inductor, a second inductor, a first filter and a second filter. The switch has a first input terminal, a second input terminal, an output terminal, a first input-output terminal, a second input-output terminal, a third input-output terminal and a ground terminal. The first inductor is connected between the path between the low-noise amplifier and the output terminal and the first input-output terminal. The second inductor is connected between the second input-output terminal and the third input-output terminal. The first filter is connected to the first input terminal and has a passband including a receiving band of the first communication frequency band. The second filter is connected to the second input terminal and has a passband including a receiving band of the second communication frequency band. The gap between sending and receiving of the second communication frequency band is wider than the gap between sending and receiving of the first communication frequency band. The switch can switch between the first state and the second state. When the switch is in the first state, the first input terminal is connected to the first input / output terminal, the first input terminal is connected to the third input / output terminal, the second input / output terminal is connected to the ground terminal, the second input terminal is not connected to the second input / output terminal, the third input / output terminal is not connected to the output terminal, and the first input / output terminal is not connected to the ground terminal. When the switch is in the second state, the second input terminal is connected to the second input / output terminal, the third input / output terminal is connected to the output terminal, the first input / output terminal is connected to the ground terminal, the first input terminal is not connected to the first input / output terminal, the first input terminal is not connected to the third input / output terminal, and the second input / output terminal is not connected to the ground terminal.

[0012] A communication device according to one aspect of the present invention includes: the high-frequency module; and a signal processing circuit connected to the high-frequency module.

[0013] Effects of the Invention

[0014] According to the high-frequency module and the communication device according to the above-described aspect, it is possible to achieve reduction in loss of received signals and reduction in leakage of transmitted signals in a plurality of communication frequency bands. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 This is a circuit configuration diagram of a communication device including the high-frequency module according to the first embodiment.

[0016] Figure 2 A is a schematic diagram showing the relationship between the transmission frequency band, the reception frequency band and the gap between transmission and reception in the first communication frequency band. Figure 2B is a schematic diagram showing the relationship between the transmission frequency band, the reception frequency band and the gap between transmission and reception in the second communication frequency band.

[0017] Figure 3 A is a partial circuit diagram showing a connection state when the switch of the high-frequency module is in the first state. Figure 3 B is a partial circuit diagram showing a connection state when the switch of the high-frequency module is in the second state.

[0018] Figure 4 This is a top view of the high-frequency module as above.

[0019] Figure 5 A is a partial circuit diagram showing a connection state when the switch of the high-frequency module according to the second embodiment is in the first state. Figure 5 B is a partial circuit diagram showing a connection state when the switch of the high-frequency module is in the second state.

[0020] Figure 6 This is a partial circuit diagram of a high-frequency module according to the third embodiment.

[0021] Figure 7 A is a partial circuit diagram showing a connection state when the switch of the high-frequency module according to the fourth embodiment is in the first state. Figure 7 B is a partial circuit diagram showing a connection state when the switch of the high-frequency module is in the second state.

[0022] Figure 8 A is a partial circuit diagram showing a connection state when the switch of the high-frequency module according to the fifth embodiment is in the third state. Figure 8 B is a partial circuit diagram showing a connection state when the switch of the high-frequency module is in the fourth state.

[0023] Fig. 9 A is a partial circuit diagram showing a connection state when the switch of the high-frequency module according to the sixth embodiment is in the fifth state. Fig. 9 B is a partial circuit diagram showing a connection state when the switch of the high-frequency module is in the sixth state.

[0024] Fig.10 This is a partial circuit diagram showing a connection state when the switch of the high-frequency module according to the seventh embodiment is in the first state.

[0025] Fig.11 This is a partial circuit diagram showing a connection state when the switch of the high-frequency module according to the seventh embodiment is in the seventh state.

[0026] Fig.12 1 is a plan view showing the relationship between the winding axis of the first inductor and the winding axis of the second inductor in the high-frequency module described above.

[0027] Fig.13 1 is a plan view of a high-frequency module according to a modification. DETAILED DESCRIPTION

[0028] Embodiments 1 to 7 are described below with reference to the drawings. The drawings referred to in the following embodiments are schematic drawings, and the sizes and thicknesses of the components in the drawings do not necessarily reflect the actual sizes, and the size ratios and thickness ratios between the components do not necessarily reflect the actual size ratios.

[0029] (Implementation Method 1)

[0030] (1) Structure of high-frequency module

[0031] First, refer to Figure 1 The structure of the high-frequency module 1 according to the first embodiment will be described.

[0032] The high-frequency module 1 involved in embodiment 1 is used for a communication device 100, for example. The communication device 100 is, for example, a portable phone such as a smartphone. In addition, the communication device 100 is not limited to a portable phone, and may also be, for example, a wearable terminal such as a smart watch. The high-frequency module 1 is, for example, a high-frequency module that can support 4G (fourth generation mobile communication) standards, 5G (fifth generation mobile communication) standards, etc. The 4G standard is, for example, the 3GPP (registered trademark, Third Generation Partnership Project) LTE (registered trademark, Long Term Evolution) standard. The 5G standard is, for example, 5G NR (New Radio). The high-frequency module 1 can, for example, support carrier aggregation and dual connectivity.

[0033] The high frequency module 1 is provided in, for example, a communication device 100 supporting multiple frequency bands in compliance with a communication standard such as LTE. The high frequency module 1 can allocate different frequencies to a transmission signal (a high frequency signal for transmission) and a reception signal (a high frequency signal for reception) by, for example, FDD (Frequency Division Duplex), thereby realizing bidirectional transmission of full-duplex communication.

[0034] In more detail, the high frequency module 1 supports a first communication frequency band and a second communication frequency band. The first communication frequency band and the second communication frequency band are, for example, communication frequency bands supporting FDD in accordance with the communication standard of LTE. The first communication frequency band is, for example, frequency band 20, and the second communication frequency band is, for example, frequency band 28B.

[0035] like Figure 2As shown in A of FIG. 1 , the first communication frequency band includes a receiving frequency band Rx1 and a transmitting frequency band Tx1. Figure 2 As shown in B, the second communication frequency band includes a receiving frequency band Rx2 and a transmitting frequency band Tx2. In addition, the transmit-receive gap G12 of the second communication frequency band is larger than the transmit-receive gap G11 of the first communication frequency band. Here, the transmit-receive gap G1 of the communication frequency band refers to the difference between the maximum frequency f1 of the frequency band on the low frequency side of the receiving frequency band and the transmitting frequency band and the minimum frequency f2 of the frequency band on the high frequency side of the receiving frequency band and the transmitting frequency band. Here, the maximum frequency f1 of the frequency band on the low frequency side of the receiving frequency band and the transmitting frequency band, and the minimum frequency f2 of the frequency band on the high frequency side of the receiving frequency band and the transmitting frequency band are values ​​based on the 3GPP standard, respectively. As shown in FIG. Figure 2 As shown in A, in the first communication frequency band, the frequency band on the low frequency side of the receiving frequency band Rx1 and the transmitting frequency band Tx1 is the transmitting frequency band Tx1, and the frequency band on the high frequency side is the receiving frequency band Rx1. Therefore, the transmission-reception gap G11 of the first communication frequency band is the difference between the maximum frequency f11 of the transmitting frequency band Tx1 and the minimum frequency f12 of the receiving frequency band Rx1. Specifically, the transmission-reception gap G11 of the first communication frequency band is 11MHz. In addition, as Figure 2 As shown in FIG. 1B, in the second communication frequency band, the frequency band on the low frequency side of the receiving frequency band Rx2 and the transmitting frequency band Tx2 is the transmitting frequency band Tx2, and the frequency band on the high frequency side is the receiving frequency band Rx2. Therefore, the transmission-reception gap G12 of the second communication frequency band is the difference between the maximum frequency f21 of the transmitting frequency band Tx2 and the minimum frequency f22 of the receiving frequency band Rx2. Specifically, the transmission-reception gap G12 of the second communication frequency band is 25 MHz.

[0036] In addition, the maximum output power of the power level of the transmission signal of the second communication frequency band is smaller than the maximum output power of the power level of the transmission signal of the first communication frequency band. The power level of the transmission signal of the first communication frequency band is, for example, power level 2. In addition, the power level of the transmission signal of the second communication frequency band is, for example, power level 3.

[0037] The high-frequency module 1 can be electrically connected to an external substrate (not shown). The external substrate is, for example, equivalent to the main board of a portable phone or a communication device. Here, the high-frequency module 1 can be electrically connected to the external substrate, including not only the case where the high-frequency module 1 is directly mounted on the external substrate, but also the case where the high-frequency module 1 is indirectly mounted on the external substrate. In addition, the case where the high-frequency module 1 is indirectly mounted on the external substrate refers to the case where the high-frequency module 1 is mounted on other high-frequency circuits mounted on the external substrate, etc.

[0038] (2) Circuit structure of high-frequency module

[0039] like Figure 1As shown, the high-frequency module 1 involved in the first embodiment includes a switch 40, a first inductor 18, and a second inductor 19. The high-frequency module 1 also includes a low-noise amplifier 51, a duplexer 13, and a duplexer 14. The duplexer 13 includes a first filter 131 having a passband including a reception band of a first communication frequency band. The duplexer 14 includes a second filter 141 having a passband including a reception band of a second communication frequency band. The high-frequency module 1 also includes a switch 10, matching circuits 11, 12, and 16, a switch 15, a power amplifier 17, and a plurality of external connection terminals 52. The plurality of external connection terminals 52 include an antenna terminal 521, a signal input terminal 522, and a signal output terminal 523.

[0040] (2.1) First inductor

[0041] The first inductor 18 functions as a part of a matching circuit connected between the first filter 131 or the second filter 141 and the low noise amplifier 51. The first inductor 18 has a first end 181 and a second end 182. The second end 182 of the first inductor 18 is connected to the low noise amplifier 51. The first end 181 of the first inductor 18 is connected to the switch 40 and the second inductor 19.

[0042] (2.2) Second inductor

[0043] The second inductor 19 has a first end 191 and a second end 192. The first end 191 of the second inductor 19 is connected to the switch 40. The second end 192 of the second inductor 19 is connected to the switch 40 and the first end 181 of the first inductor 18.

[0044] (2.3) Switch

[0045] The switch 40 is a switch for selecting whether to connect the first end 181 of the first inductor 18 and the first end 191 of the second inductor 19 to any one of the first filter 131 of the duplexer 13, the second filter 141 of the duplexer 14, and the ground electrode, or to connect to none of them. The switch 40 can be formed of a DPDT (Dual Pole Dual Throw) type switch, for example.

[0046] The switch 40 has a first input terminal 401 and a second input terminal 402. The first input terminal 401 is connected to the first filter 131 of the duplexer 13. The second input terminal 402 is connected to the second filter 141 of the duplexer 14.

[0047] The switch 40 further includes an output terminal 403, an input / output terminal 404, and a ground terminal 400. The output terminal 403 is connected to the first end 181 of the first inductor 18. That is, the first inductor 18 is connected between the low noise amplifier 51 and the output terminal 403. The input / output terminal 404 is connected to the first end 191 of the second inductor 19. In addition, the second end 192 of the second inductor 19 is connected to the path between the output terminal 403 of the switch 40 and the first end 181 of the first inductor 18. That is, the second inductor 19 is connected between the path between the first inductor 18 and the output terminal 403 and the input / output terminal 404. The ground terminal 400 is connected to the ground electrode.

[0048] The switch 40 can switch between a first state and a second state.

[0049] In the first state, if Figure 3 As shown in A, the first input terminal 401 is connected to the output terminal 403, and the ground terminal 400 is connected to the input-output terminal 404. In addition, in the first state, the two terminals that are connected to each other in the second state described later are not connected to each other. That is, in the first state, the second input terminal 402 is not connected to the input-output terminal 404. That is, in the first state, the first inductor 18 is connected between the first filter 131 and the low-noise amplifier 51. In addition, in the first state, the path between the first inductor 18 and the first filter 131 is connected to the ground electrode via the second inductor 19.

[0050] In addition, in the second state, if Figure 3 As shown in B, the second input terminal 402 is connected to the input-output terminal 404. In addition, in the second state, the two terminals that are connected to each other in the first state are not connected to each other. That is, in the second state, the first input terminal 401 is not connected to the output terminal 403, and the input-output terminal 404 is not connected to the ground terminal 400. That is, in the second state, the series circuit of the first inductor 18 and the second inductor 19 is connected between the second filter 141 and the low-noise amplifier 51.

[0051] The switch 40 is controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2 .

[0052] (2.4) Low Noise Amplifier

[0053] The low noise amplifier 51 is an amplifier that amplifies the received signal in a low noise manner. In more detail, the low noise amplifier 51 amplifies the received signal of the first communication frequency band and the received signal of the second communication frequency band. The low noise amplifier 51 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the low noise amplifier 51 is connected to the second end 182 of the first inductor 18. The output terminal of the low noise amplifier 51 is connected to an external circuit (for example, a signal processing circuit 2) via a signal output terminal 523.

[0054] (2.5) Duplexer

[0055] The duplexer 13 includes a first filter 131 and a transmission filter 132. The first filter 131 and the transmission filter 132 are each, for example, an elastic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators. The elastic wave filter is, for example, a SAW (Surface Acoustic Wave) filter using surface acoustic waves.

[0056] The first filter 131 is a receiving filter having a passband including a receiving frequency band of the first communication frequency band. The first filter 131 has an input terminal and an output terminal. The input terminal of the first filter 131 is connected to the switch 10 via the matching circuit 11. The output terminal of the first filter 131 is connected to the first input terminal 401 of the switch 40.

[0057] The transmission filter 132 is a transmission filter having a passband including the transmission frequency band of the first communication frequency band. The transmission filter 132 has an input terminal and an output terminal. The input terminal of the transmission filter 132 is connected to the switch 15. The output terminal of the transmission filter 132 is connected to the switch 10 via the matching circuit 11.

[0058] In the high-frequency module 1 , an input terminal of the first filter 131 and an output terminal of the transmission filter 132 are connected to one selection terminal of the switch 10 via the matching circuit 11 .

[0059] The duplexer 14 includes a second filter 141 and a transmission filter 142. Each of the second filter 141 and the transmission filter 142 is, for example, an elastic wave filter including a plurality of series arm resonators and a plurality of parallel arm resonators. The elastic wave filter is, for example, a SAW (Surface Acoustic Wave) filter using surface acoustic waves.

[0060] The second filter 141 is a receiving filter having a passband including a receiving frequency band of the second communication frequency band. The second filter 141 has an input terminal and an output terminal. The input terminal of the second filter 141 is connected to the switch 10 via the matching circuit 12. The output terminal of the second filter 141 is connected to the second input terminal 402 of the switch 40.

[0061] The transmission filter 142 is a transmission filter having a passband including the transmission frequency band of the second communication frequency band. The transmission filter 142 has an input terminal and an output terminal. The input terminal of the transmission filter 142 is connected to the switch 15. The output terminal of the transmission filter 142 is connected to the switch 10 via the matching circuit 12.

[0062] In the high-frequency module 1 , an input terminal of the second filter 141 and an output terminal of the transmission filter 142 are connected to one selection terminal of the switch 10 via the matching circuit 12 .

[0063] (2.6) Switch

[0064] The switch 10 is a switch for selecting a path connected to the antenna terminal 521 from among the duplexer 13 and the duplexer 14. The switch 10 has a common terminal 101 and selection terminals 102 and 103.

[0065] The common terminal 101 is connected to the antenna terminal 521. The selection terminal 102 is connected to the duplexer 13 via the matching circuit 11. The selection terminal 103 is connected to the duplexer 14 via the matching circuit 12.

[0066] The switch 10 is controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2 .

[0067] The switch 15 is a switch for selecting a path connected to the power amplifier 17 from among the transmission filters 132 and 142. The switch 15 has a common terminal 150 and selection terminals 151 and 152.

[0068] The common terminal 150 is connected to the power amplifier 17 via the matching circuit 16. The selection terminal 151 is connected to the input terminal of the transmission filter 132 included in the duplexer 13. The selection terminal 152 is connected to the input terminal of the transmission filter 142 included in the duplexer 14.

[0069] The switch 15 is controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2 .

[0070] (2.7) Power amplifier

[0071] The power amplifier 17 is an amplifier for amplifying the transmission signal. The power amplifier 17 has an input terminal (not shown) and an output terminal (not shown). The input terminal of the power amplifier 17 is connected to an external circuit (for example, the signal processing circuit 2) via the signal input terminal 522. The output terminal of the power amplifier 17 is connected to the common terminal 150 of the switch 15 via the matching circuit 16.

[0072] (2.8) Matching circuit

[0073] The matching circuit 11 is a circuit for matching the impedance of the duplexer 13 connected via the matching circuit 11 with the impedance of the antenna terminal 521. The matching circuit 11 includes at least one of an inductor and a capacitor.

[0074] The matching circuit 12 is a circuit for matching the impedance of the duplexer 14 connected via the matching circuit 12 with the impedance of the antenna terminal 521. The matching circuit 12 includes at least one of an inductor and a capacitor.

[0075] The matching circuit 16 is a circuit for matching the impedance of the transmission filter 132 or the transmission filter 142 connected via the matching circuit 16 with the impedance of the power amplifier 17. The matching circuit 16 includes at least one of an inductor and a capacitor.

[0076] (2.9) External connection terminals

[0077] The plurality of external connection terminals 52 are terminals for electrically connecting to an external circuit (e.g., the signal processing circuit 2). The plurality of external connection terminals 52 include an antenna terminal 521, a signal input terminal 522, a signal output terminal 523, a plurality of control terminals (not shown), and a plurality of ground terminals (not shown).

[0078] The antenna 3 is connected to the antenna terminal 521 . In the high-frequency module 1 , the antenna terminal 521 is connected to the common terminal 101 of the switch 10 .

[0079] The signal input terminal 522 is a terminal for inputting a transmission signal from an external circuit (eg, the signal processing circuit 2 ) to the high-frequency module 1 . In the high-frequency module 1 , the signal input terminal 522 is connected to an input terminal of the power amplifier 17 .

[0080] The signal output terminal 523 is a terminal for outputting a reception signal from the high frequency module 1 to an external circuit (eg, the signal processing circuit 2 ). In the high frequency module 1 , the signal output terminal 523 is connected to an output terminal of the low noise amplifier 51 .

[0081] The plurality of control terminals are terminals for inputting control signals from an external circuit (eg, the signal processing circuit 2 ) to the high-frequency module 1 .

[0082] The plurality of ground terminals are terminals that are electrically connected to a ground electrode of an external substrate (not shown) provided in the communication device 100 and are provided with a ground potential. One of the plurality of ground terminals is connected to a ground terminal 400 of the switch 40. In the high frequency module 1, the plurality of ground terminals are connected to the substrate 6 (see Figure 4 ) is connected to a stratum (not shown).

[0083] (3) Structure of communication device

[0084] like Figure 1 As shown, the communication device 100 includes a high-frequency module 1 , a signal processing circuit 2 , and an antenna 3 .

[0085] Antenna 3 is connected to antenna terminal 521 of high frequency module 1. Antenna 3 has a transmission function of radiating a transmission signal output from high frequency module 1 as a radio wave, and a reception function of receiving a reception signal as a radio wave from the outside and outputting it to high frequency module 1.

[0086] The signal processing circuit 2 includes an RF signal processing circuit 21 and a baseband signal processing circuit 22. The signal processing circuit 2 processes the signal passing through the high frequency module 1. More specifically, the signal processing circuit 2 processes the transmission signal and the reception signal.

[0087] The RF signal processing circuit 21 is, for example, a RFIC (Radio Frequency Integrated Circuit) and performs signal processing on a high frequency signal.

[0088] The RF signal processing circuit 21 performs signal processing such as up-conversion and amplification on the transmission signal transmitted from the baseband signal processing circuit 22, and outputs the processed transmission signal to the high-frequency module 1. In addition, the RF signal processing circuit 21 performs signal processing such as amplification and down-conversion on the reception signal output from the high-frequency module 1, and outputs the processed reception signal to the baseband signal processing circuit 22.

[0089] The baseband signal processing circuit 22 is, for example, a BBIC (Baseband Integrated Circuit). The baseband signal processing circuit 22 performs predetermined signal processing on a transmission signal from the outside of the signal processing circuit 2. The reception signal processed by the baseband signal processing circuit 22 is used, for example, as an image signal for image display or as an audio signal for telephone calls.

[0090] In addition, the RF signal processing circuit 21 also has a function as a control unit that controls the connection of the switches 40, 10, and 15 of the high-frequency module 1 based on the transmission and reception of high-frequency signals (transmission signals, reception signals). Specifically, the RF signal processing circuit 21 uses a control signal (not shown) to switch the connection of the switches 40, 10, and 15 of the high-frequency module 1. In addition, the control unit may be provided outside the RF signal processing circuit 21, for example, it may be provided in the high-frequency module 1 or the baseband signal processing circuit 22.

[0091] (4) Structure of high-frequency module

[0092] Next, refer to Figure 4 The structure of the high-frequency module 1 according to the first embodiment will be described.

[0093] like Figure 4 As shown in FIG. 1 , the high frequency module 1 includes a substrate 6, matching circuits 11, 12, and 16, a duplexer 13, a duplexer 14, a power amplifier 17, a first inductor 18, a second inductor 19, and IC chips 71, 72, and 73. In the following description, the long axis direction of the substrate 6 is referred to as a first direction D1, the short axis direction of the substrate 6 is referred to as a second direction D2, and the thickness direction of the substrate 6 is referred to as a third direction D3. The first direction D1, the second direction D2, and the third direction D3 are orthogonal to each other.

[0094] The high frequency module 1 is electrically connected to an external substrate (not shown). The external substrate is, for example, a communication device 100 such as a mobile phone or a communication device (see Figure 1 ) motherboard.

[0095] (4.1)Substrate

[0096] like Figure 4 As shown, the substrate 6 has a first main surface 61 and a second main surface 62. The first main surface 61 and the second main surface 62 face each other in the thickness direction of the substrate 6, that is, the third direction D3. When the high-frequency module 1 is provided on an external substrate, the second main surface 62 faces the main surface of the external substrate on the side of the substrate 6. The substrate 6 is a double-sided mounting substrate in which matching circuits 11, 12, and 16, a duplexer 13, a duplexer 14, a power amplifier 17, a first inductor 18, and a second inductor 19 are mounted on the first main surface 61, and IC chips 71, 72, and 73, and a plurality of external connection terminals 52 are mounted on the second main surface 62.

[0097] The substrate 6 is a multilayer substrate formed by stacking a plurality of dielectric layers. The substrate 6 has a plurality of conductive layers and a plurality of via conductors (including through electrodes). The plurality of conductive layers include a ground electrode of ground potential. The plurality of via conductors are used to electrically connect the components mounted on the first main surface 61 and the second main surface 62 respectively to the conductive layers of the substrate 6. The components mounted on the first main surface 61 and the second main surface 62 respectively include the above-mentioned matching circuits 11, 12 and 16, the duplexer 13, the duplexer 14, the power amplifier 17, the first inductor 18, the second inductor 19, the IC chips 71, 72 and 73, and a plurality of external connection terminals 52.

[0098] (4.2) IC chip

[0099] The IC chip 71 is disposed on the second main surface 62 of the substrate 6. The IC chip 71 includes the switch 10, for example.

[0100] The IC chip 72 is disposed on the second main surface 62 of the substrate 6. The IC chip 72 includes the switch 15, for example.

[0101] The IC chip 73 is disposed on the second main surface 62 of the substrate 6. The IC chip 73 includes the low-noise amplifier 51 and further includes the switch 40, for example.

[0102] (4.3) Configuration in high-frequency module

[0103] The first inductor 18 and the second inductor 19 are disposed adjacent to each other on the first main surface 61 of the substrate 6. Here, “the first inductor 18 and the second inductor 19 are disposed adjacent to each other on the first main surface 61 of the substrate 6” means that the first inductor 18 and the second inductor 19 are disposed on the first main surface 61 of the substrate 6, and nothing is disposed between the first inductor 18 and the second inductor 19 on the first main surface 61.

[0104] In addition, the direction A1 of the winding axis of the first inductor 18 (see Fig.12 ) and the direction A2 of the winding axis of the second inductor 19 (refer to Fig.12 Here, “the direction A1 of the winding axis of the first inductor 18 and the direction A2 of the winding axis of the second inductor 19 are parallel to each other” means: Fig.12As shown, the angle formed by the direction A1 of the winding axis of the first inductor 18 and the direction A2 of the winding axis of the second inductor 19 is less than 45 degrees. In addition, it is more preferred that the angle formed by the direction A1 of the winding axis of the first inductor 18 and the direction A2 of the winding axis of the second inductor 19 is less than 10 degrees. As a result, the magnetic field generated in the first inductor 18 and the magnetic field generated in the second inductor 19 further enhance each other, thereby magnetically coupling the first inductor 18 and the second inductor 19. As a result, for example, when the first inductor 18 and the second inductor 19 are connected in series, the Q value of the series circuit of the first inductor 18 and the second inductor 19 becomes larger than the Q value of the series circuit of the first inductor 18 and the second inductor 19 when the first inductor 18 and the second inductor 19 are not magnetically coupled. Therefore, when the matching circuit between the first filter 131 and the low-noise amplifier 51 is a circuit including both the first inductor 18 and the second inductor 19 , it is possible to reduce the loss of the received signal in the first communication frequency band.

[0105] In addition, the first inductor 18 is larger than the second inductor 19. The first inductor 18 must be connected in series between the low noise amplifier 51 and the first filter 131 or the second filter 141, so it is preferable that the resistance of the first inductor 18 is smaller than the resistance of the second inductor 19. On the other hand, when the second inductor 19 is connected in series between the low noise amplifier 51 and the first filter 131 or the second filter 141, the second inductor 19 is connected in series with the first inductor 18. As described above, the Q value of the series circuit of the first inductor 18 and the second inductor 19 is larger than the Q value of the series circuit of the first inductor 18 and the second inductor 19 when the first inductor 18 and the second inductor 19 are not magnetically coupled. Therefore, even when the second inductor 19 is small, the loss of the received signal is reduced compared with a single inductor having the same inductance as the series circuit of the first inductor 18 and the second inductor 19.

[0106] In addition, when viewed from the thickness direction of the substrate 6, that is, the third direction D3, the first inductor 18 overlaps with the IC chip 73. Here, "the first inductor 18 overlaps with the IC chip 73 when viewed from the third direction D3" means that at least a portion of the first inductor 18 overlaps with at least a portion of the IC chip 73 when viewed from the third direction D3. As a result, the length of the wiring portion between the second end 182 of the first inductor 18 and the low-noise amplifier 51 included in the IC chip 73 can be shortened. Therefore, the loss of the received signal of the high-frequency module 1 can be reduced. In addition, the length of the wiring portion between the first inductor 18 and the switch 40 included in the IC chip 73 can be shortened, thereby reducing the loss of the received signal of the high-frequency module 1.

[0107] In addition, when viewed from the third direction D3, which is the thickness direction of the substrate 6, the second inductor 19 overlaps with the IC chip 73. Here, “when viewed from the third direction D3, the second inductor 19 overlaps with the IC chip 73” means that at least a portion of the second inductor 19 overlaps with at least a portion of the IC chip 73 when viewed from the third direction D3. As a result, the length of the wiring portion between the output terminal 403 of the switch 40 and the second end 192 of the second inductor 19 and the length of the wiring portion between the input / output terminal 404 of the switch 40 and the first end 191 of the second inductor 19 can be shortened. Therefore, the loss of the received signal of the high-frequency module 1 can be reduced.

[0108] (5) Operation of high-frequency module

[0109] Below, refer to Figure 3 A and Figure 3 The operation of the high-frequency module 1 according to the first embodiment will be described with reference to FIG.

[0110] In the high frequency module 1 according to the first embodiment, the second end 182 of the first inductor 18 is connected to the input terminal of the low noise amplifier 51. In addition, the first end 181 of the first inductor 18 is connected to either the first filter 131 or the second filter 141 via the switch 40. Furthermore, the first end 181 of the first inductor 18 can be connected to the ground electrode via the second inductor 19.

[0111] When the second inductor 19 is connected to the ground electrode, the circuit between the first input terminal 401 or the second input terminal 402 of the switch 40 and the low noise amplifier 51 includes the first inductor 18 and the second inductor 19, causing impedance mismatch between the path transmitted from the antenna terminal 521 of the high frequency module 1 and the low noise amplifier 51. That is, even if a part of the transmission signal output from the power amplifier 17 leaks from the duplexer 13 or the duplexer 14 to the switch 40, the leaked part of the transmission signal is not easy to reach the low noise amplifier 51. On the other hand, in the structure in which the second inductor 19 is connected to the ground electrode and the structure in which the second inductor 19 is not connected to the ground electrode, the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 40 and the low noise amplifier 51 are different. Therefore, depending on the communication frequency band, sometimes not connecting the second inductor 19 to the ground can reduce the loss of the received signal and obtain good characteristics.

[0112] As described above, in the first communication frequency band, the transmit-receive gap G11 between the transmit frequency band Tx1 and the receive frequency band Rx1 is smaller than the transmit-receive gap G12 of the second communication frequency band. In addition, the transmit signal of the first communication frequency band is a transmit signal of power level 2, and its maximum output power is greater than that of the transmit signal of the second communication frequency band. Therefore, when receiving the receive signal of the first communication frequency band, the intensity of the transmit signal of the first communication frequency band entering the switch 40 from the first filter 131 is greater than the intensity of the transmit signal of the second communication frequency band entering the switch 40 from the second filter 141 when receiving the receive signal of the second communication frequency band.

[0113] In the high frequency module 1 according to the first embodiment, when receiving a signal in the first communication frequency band, Figure 3 As shown in A, the switch 40 is set to the first state. Therefore, the first end 181 of the first inductor 18 is connected to the first filter 131 via the switch 40. In addition, the first end 181 of the first inductor 18 is connected to the ground electrode via the second inductor 19. Therefore, when the high-frequency module 1 receives the reception signal of the first communication frequency band, it is possible to remove the transmission signal of the first communication frequency band entering the switch 40 from the first filter 131 with high accuracy.

[0114] On the other hand, in the high frequency module 1 according to the first embodiment, when receiving a signal in the second communication frequency band, as shown in FIG. Figure 3 As shown in B, the switch 40 is set to the second state. Therefore, the first end 181 of the first inductor 18 is connected to the second filter 141 via the second inductor 19 and the switch 40. That is, a series circuit of the first inductor 18 and the second inductor 19 is connected between the second filter 141 and the low-noise amplifier 51. Therefore, when the high-frequency module 1 receives a received signal of the second communication frequency band, the loss of the received signal of the second communication frequency band can be reduced, and the characteristics of the circuit between the second filter 141 and the low-noise amplifier 51 can be optimized.

[0115] (6) Effect

[0116] The high frequency module 1 according to the first embodiment includes: a low noise amplifier 51 that amplifies a received signal; a switch 40; a first inductor 18; a second inductor 19; a first filter 131; and a second filter 141. The switch 40 has a first input terminal 401, a second input terminal 402, an output terminal 403, an input / output terminal 404, and a ground terminal 400. The first inductor 18 is connected between the input terminal and the output terminal 403 of the low noise amplifier 51. The second inductor 19 is connected between the path between the first inductor 18 and the output terminal 403 and the input / output terminal 404. The first filter 131 is connected to the first input terminal 401 and has a passband including a receiving band of the first communication frequency band. The second filter 141 is connected to the second input terminal 402 and has a passband including a receiving band of the second communication frequency band. The gap between transmission and reception of the second communication frequency band is wider than the gap between transmission and reception of the first communication frequency band. The switch 40 can switch between the first state and the second state. In the switch 40, in the first state, the first input terminal 401 is connected to the output terminal 403, the input-output terminal 404 is connected to the ground terminal 400, and the second input terminal 402 is not connected to the input-output terminal 404. In the switch 40, in the second state, the second input terminal 402 is connected to the input-output terminal 404, the first input terminal 401 is not connected to the output terminal 403, and the input-output terminal 404 is not connected to the ground terminal 400.

[0117] Thus, in the high frequency module 1, when receiving a reception signal of the first communication frequency band, the switch 40 is in the first state, thereby reducing the leakage of the transmission signal of the first communication frequency band to the low noise amplifier 51. In addition, in the high frequency module 1, when receiving a reception signal of the second communication frequency band, the switch 40 is in the second state, thereby reducing the loss of the reception signal of the second communication frequency band.

[0118] In addition, the high-frequency module 1 involved in the first embodiment includes a substrate 6. The substrate 6 has a first main surface 61 and a second main surface 62 facing each other. The first inductor 18 and the second inductor 19 are adjacently arranged on the first main surface 61 of the substrate 6. The direction A1 of the winding axis of the first inductor 18 and the direction A2 of the winding axis of the second inductor 19 are parallel to each other. Therefore, when both the first inductor 18 and the second inductor 19 are used, the loss of the received signal in the second communication frequency band can be reduced.

[0119] In the high frequency module 1 according to the first embodiment, the transmission signal in the first communication frequency band is a transmission signal of power level 2. The transmission signal in the second communication frequency band is a transmission signal having a lower maximum output power than power level 2.

[0120] Thus, in the high frequency module 1, when receiving a reception signal in the first communication frequency band, leakage of the transmission signal in the first communication frequency band to the low noise amplifier 51 can be reduced, and when receiving a reception signal in the second communication frequency band, loss of the reception signal in the second communication frequency band can be reduced.

[0121] In addition, the high-frequency module 1 involved in the first embodiment includes a transmission filter 132, and the transmission filter 132 has a passband including the transmission frequency band of the first communication frequency band. The first filter 131 and the transmission filter 132 constitute a duplexer 13. Therefore, in the high-frequency module 1 involved in the first embodiment, while supporting both the transmission of the transmission signal and the reception of the reception signal in the first communication frequency band, the influence of the transmission signal in the first communication frequency band on the reception operation of the first communication frequency band can be reduced.

[0122] In addition, the high-frequency module 1 involved in the first embodiment includes a transmission filter 142, and the transmission filter 142 has a passband including the transmission frequency band of the second communication frequency band. The second filter 141 and the transmission filter 142 constitute a duplexer 14. Therefore, in the high-frequency module 1 involved in the first embodiment, while supporting both the transmission of the transmission signal and the reception of the reception signal in the second communication frequency band, the influence of the transmission signal in the second communication frequency band on the reception operation of the second communication frequency band can be reduced.

[0123] In addition, in the high-frequency module 1 involved in the first embodiment, when viewed from the thickness direction D3 of the substrate 6, the first inductor 18 is larger than the second inductor 19. Therefore, when receiving a reception signal of the first communication frequency band, the Q value of the first inductor 18 is large, thereby reducing the loss of the reception signal. In addition, when receiving a reception signal of the second communication frequency band, the Q value of the circuit including the first inductor 18 and the second inductor 19 is large, so even if the second inductor 19 is smaller than the first inductor 18, it is not easy to cause an increase in the loss of the reception signal.

[0124] In the high-frequency module 1 according to the first embodiment, the IC chip 73 is arranged on the second main surface 62 of the substrate 6. The IC chip 73 includes the low-noise amplifier 51. When viewed from the thickness direction D3 of the substrate 6, the first inductor 18 overlaps with the IC chip 73. Thus, the length of the wiring portion between the second end 182 of the first inductor 18 and the low-noise amplifier 51 included in the IC chip 73 can be shortened. Therefore, the loss of the received signal of the high-frequency module 1 can be reduced.

[0125] In the high-frequency module 1 according to the first embodiment, the IC chip 73 further includes the switch 40. The second inductor 19 is arranged on the first main surface 61 of the substrate 6. The IC chip 73 is arranged on the second main surface 62 of the substrate 6. When viewed from the thickness direction D3 of the substrate 6, the second inductor 19 overlaps with the IC chip 73. As a result, the length of the wiring portion between the output terminal 403 of the switch 40 and the second end 192 of the second inductor 19 and the length of the wiring portion between the input / output terminal 404 of the switch 40 and the first end 191 of the second inductor 19 can be shortened. Therefore, the loss of the received signal of the high-frequency module 1 can be reduced.

[0126] (Implementation Method 2)

[0127] (1) Structure

[0128] Regarding the high frequency module 1 according to the second embodiment, Figure 5 A and Figure 5 As shown in FIG. 1B , the switch 40 includes a first switch 41 and a second switch 42. The high frequency module 1 according to the second embodiment includes all the configurations of the high frequency module 1 according to the first embodiment except the switch 40, and thus descriptions of the same configurations are omitted.

[0129] The first switch 41 is a switch for selecting whether to connect the first end 181 of the first inductor 18 to the first filter 131 .

[0130] The first switch 41 has a first input terminal 401 and an output terminal 403. The first input terminal 401 is connected to the first filter 131. The output terminal 403 is connected to the first end 181 of the first inductor 18. The second end 192 of the second inductor 19 is connected to the path between the output terminal 403 of the switch 40 and the first end 181 of the first inductor 18.

[0131] The first switch 41 can switch between the first state and the second state. Figure 5 As shown in A of FIG. 1 , the first input terminal 401 is connected to the output terminal 403. In the second state, as shown in FIG. Figure 5 As shown in B, the first input terminal 401 and the output terminal 403 are set to be disconnected.

[0132] The second switch 42 is a switch for selecting a path connected to the first end 191 of the second inductor 19 from the second filter 141 of the duplexer 14 and the ground electrode.

[0133] The second switch 42 has a second input terminal 402, an input-output terminal 404, and a ground terminal 400. The second input terminal 402 is connected to the second filter 141. The input-output terminal 404 is connected to the first end 191 of the second inductor 19. The ground terminal 400 is connected to a ground electrode.

[0134] The second switch 42 can switch between the first state and the second state. Figure 5 As shown in A, the input / output terminal 404 is connected to the ground terminal 400, and the second input terminal 402 is not connected to the input / output terminal 404. In the second state, as shown in Figure 5 As shown in FIG. 1B , the second input terminal 402 is connected to the input-output terminal 404 , and the ground terminal 400 is not connected to the input-output terminal 404 .

[0135] The first switch 41 and the second switch 42 are controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2 .

[0136] In the high-frequency module 1 involved in the second embodiment, when receiving the reception signal of the first communication frequency band, the first switch 41 and the second switch 42 are both set to the first state. Thus, as in the first embodiment, the leakage of the transmission signal of the first communication frequency band to the low-noise amplifier 51 can be reduced. In addition, in the high-frequency module 1 involved in the second embodiment, when receiving the reception signal of the second communication frequency band, the first switch 41 and the second switch 42 are both set to the second state. Thus, as in the first embodiment, the loss of the reception signal of the second communication frequency band can be reduced. In addition, in the high-frequency module 1 involved in the second embodiment, the switch 40 is separated into the first switch 41 and the second switch 42, so that the loss in the switch 40 can be reduced.

[0137] (2) Effect

[0138] The high frequency module 1 according to the second embodiment includes a first switch 41 and a second switch 42 instead of the switch 40. The first switch 41 includes a first input terminal 401 and an output terminal 403, and can switch between connection and non-connection of the first input terminal 401 and the output terminal 403. The second switch 42 includes a second input terminal 402, an input / output terminal 404, and a ground terminal 400, and can connect the input / output terminal 404 to the second input terminal 402 or the ground terminal 400. In a first state, the first switch 41 connects the first input terminal 401 to the output terminal 403. In addition, in the first state, the second switch 42 connects the input / output terminal 404 to the ground terminal 400, and does not connect the second input terminal 402 to the input / output terminal 404. In a second state, the first switch 41 does not connect the first input terminal 401 to the output terminal 403. In the second state, the second switch 42 connects the second input terminal 402 to the input / output terminal 404, and does not connect the input / output terminal 404 to the ground terminal 400.

[0139] Thus, in the high-frequency module 1 involved in the second embodiment, similarly to the high-frequency module 1 involved in the first embodiment, when receiving the reception signal of the first communication frequency band, the leakage of the transmission signal of the first communication frequency band to the low-noise amplifier 51 can be reduced. In addition, in the high-frequency module 1 involved in the second embodiment, similarly to the high-frequency module 1 involved in the first embodiment, when receiving the reception signal of the second communication frequency band, the loss of the reception signal of the second communication frequency band can be reduced. In addition, in the high-frequency module 1 involved in the second embodiment, the switch 40 is separated into the first switch 41 and the second switch 42, so the loss in the switch 40 can be reduced.

[0140] (Implementation 3)

[0141] (1) Structure

[0142] like Figure 6 As shown, compared with the high-frequency module 1 according to the second embodiment, the high-frequency module 1 according to the third embodiment further includes a second low-noise amplifier 512 and a third inductor 189, and the switch 40 includes a second switch 42a instead of the second switch 42. In addition, the high-frequency module 1 according to the third embodiment includes all the structures of the high-frequency module 1 according to the second embodiment except the second switch 42, and therefore the description of the same structures is omitted.

[0143] The second switch 42a has a second input terminal 402, an input / output terminal 404, a ground terminal 400, and a third input terminal 409. The second input terminal 402 is connected to the second filter 141 of the duplexer 14 (see Figure 1 ) is connected. The input / output terminal 404 is connected to the first end 191 of the second inductor 19. The ground terminal 400 is connected to the ground electrode. The third input terminal 409 is, for example, a terminal for inputting a reception signal of a third communication frequency band, and is connected to a filter (not shown) having a passband including a reception frequency band of the third communication frequency band.

[0144] In addition to being able to switch between the first state and the second state, the second switch 42a can also be switched to a third state. In the first state, the ground terminal 400 is connected to the input / output terminal 404, and the input / output terminal 404 is not connected to any of the second input terminal 402 and the third input terminal 409. In the second state, the second input terminal 402 is connected to the input / output terminal 404, and the input / output terminal 404 is not connected to any of the third input terminal 409 and the ground terminal 400. In the third state, the third input terminal 409 is connected to the input / output terminal 404, and the input / output terminal 404 is not connected to any of the second input terminal 402 and the ground terminal 400.

[0145] The second low noise amplifier 512 is an amplifier that amplifies the received signal in a low noise manner. In more detail, the second low noise amplifier 512 is an amplifier that amplifies the received signal of the third communication frequency band. The second low noise amplifier 512 is different from the low noise amplifier 51. In embodiment 3, the low noise amplifier 51 is equivalent to the first low noise amplifier. The input terminal of the second low noise amplifier 512 is connected to the third inductor 189. The output terminal of the second low noise amplifier 512 is connected to an external circuit (for example, a signal processing circuit 2) via one of the external connection terminals 52.

[0146] A first end of the third inductor 189 is connected to an input terminal of the second low noise amplifier 512. A second end of the third inductor 189 is connected between a path between the first inductor 18 and the output terminal 403 and the second inductor 19. That is, the third inductor 189 is connected between a path between the second inductor 19 and the first inductor 18 and the second low noise amplifier 512.

[0147] The high-frequency module 1 according to the third embodiment performs the same operation as the high-frequency module 1 according to the second embodiment for each of the reception in the first communication frequency band and the reception in the second communication frequency band. Furthermore, the high-frequency module 1 according to the third embodiment switches the first switch 41 and the second switch 42a to the third state during the reception in the third communication frequency band. In the third state, the first switch 41 sets the first input terminal 401 and the output terminal 403 to be disconnected as in the second state. In addition, in the third state, the third input terminal 409 of the second switch 42a is connected to the input-output terminal 404.

[0148] Therefore, in the high-frequency module 1 involved in the third embodiment, in the reception of the first communication frequency band, the first inductor 18 is connected in series between the first input terminal 401 and the first low-noise amplifier 51, and the path between the first inductor 18 and the first input terminal 401 is connected to the ground electrode via the second inductor 19. In addition, in the high-frequency module 1 involved in the third embodiment, in the reception of the second communication frequency band, a series circuit of the second inductor 19 and the first inductor 18 is connected between the second input terminal 402 and the first low-noise amplifier 51. And, in the high-frequency module 1 involved in the third embodiment, in the reception of the third communication frequency band, a series circuit of the second inductor 19 and the third inductor 189 is connected between the third input terminal 409 and the second low-noise amplifier 512. Therefore, in the high-frequency module 1 involved in embodiment 3, in the reception of the second communication frequency band and the reception of the third communication frequency band, it is possible to switch which of the first low-noise amplifier 51 and the second low-noise amplifier 512 is used, and the characteristics of the circuit between the second input terminal 402 of the switch 40 and the first low-noise amplifier 51, and the characteristics of the circuit between the third input terminal 409 of the switch 40 and the second low-noise amplifier 512 can be easily changed.

[0149] (2) Effect

[0150] The high-frequency module 1 according to the third embodiment further includes: a second low-noise amplifier 512 different from the first low-noise amplifier 51; and a third inductor 189 connected to the second low-noise amplifier 512. The third inductor 189 is connected between the path between the second inductor 19 and the first inductor 18 and the second low-noise amplifier 512. Thus, in the high-frequency module 1 according to the third embodiment, the second low-noise amplifier 512 can be used in the reception of a communication band different from the first communication band and the second communication band, and the third inductor 189 and the second inductor 19 are connected between the second low-noise amplifier 512 and the reception path of the communication band. Therefore, the reception characteristics of the third communication band can be optimized.

[0151] (Implementation 4)

[0152] (1) Structure

[0153] like Figure 7 A and Figure 7As shown in FIG. 1B , the high-frequency module 1 according to the fourth embodiment includes a first inductor 18a, a second inductor 19a, and a switch 43, in place of the first inductor 18, the second inductor 19, and the switch 40, in contrast to the high-frequency module 1 according to the first embodiment. The high-frequency module 1 according to the fourth embodiment includes all the structures of the high-frequency module 1 according to the first embodiment except for the first inductor 18, the second inductor 19, and the switch 40, and thus descriptions of the same structures are omitted.

[0154] The switch 43 is a switch for selecting to which of the first inductor 18a, the second inductor 19a, and the low noise amplifier 51 the first filter 131 of the duplexer 13 and the second filter 141 of the duplexer 14 are connected. In addition, the switch 43 is a switch for selecting whether to connect the first inductor 18a and the second inductor 19a to each other, and to which of the first inductor 18a and the second inductor 19a the ground terminal 400 is connected. The switch 43 can be configured by, for example, a DPDT (Dual Pole Dual Throw) type switch.

[0155] The switch 43 has a first input terminal 401, a second input terminal 402, and a ground terminal 400. The first input terminal 401 is connected to the first filter 131 of the duplexer 13. The second input terminal 402 is connected to the second filter 141 of the duplexer 14. The ground terminal 400 is connected to a ground electrode.

[0156] The switch 43 further includes an output terminal 431, a first input-output terminal 432, a second input-output terminal 433, and a third input-output terminal 434. The output terminal 431 is connected to the low-noise amplifier 51. The first input-output terminal 432 is connected to the first inductor 18a. That is, the first inductor 18a is connected between the path between the output terminal 431 and the low-noise amplifier 51 and the first input-output terminal 432. The second input-output terminal 433 and the third input-output terminal 434 are connected to the second inductor 19a. More specifically, the second inductor 19a is connected between the second input-output terminal 433 and the third input-output terminal 434.

[0157] The switch 43 can switch between a first state and a second state.

[0158] In the first state, if Figure 7As shown in A, the first input terminal 401 is connected to the first input-output terminal 432, and the first input terminal 401 is connected to the third input-output terminal 434, and the second input-output terminal 433 is connected to the ground terminal 400. In the first state, the second input terminal 402 is not connected to the second input-output terminal 433, and the third input-output terminal 434 is not connected to the output terminal 431, and the first input-output terminal 432 is not connected to the ground terminal 400. That is, in the first state, the first inductor 18a is connected between the first filter 131 and the low-noise amplifier 51. In addition, in the first state, the path between the first inductor 18a and the first filter 131 is connected to the ground electrode via the second inductor 19a.

[0159] In addition, in the second state, if Figure 7 As shown in B, the second input terminal 402 is connected to the second input-output terminal 433, the third input-output terminal 434 is connected to the output terminal 431, and the first input-output terminal 432 is connected to the ground terminal 400. In the second state, the first input terminal 401 is not connected to the first input-output terminal 432, the first input terminal 401 is not connected to the third input-output terminal 434, and the second input-output terminal is not connected to the ground terminal 400.

[0160] The switch 43 is controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2 .

[0161] Each of the first inductor 18 a and the second inductor 19 a functions as a part of a circuit connected between the first filter 131 or the second filter 141 and the low-noise amplifier 51 .

[0162] It is preferable that the first inductor 18 a and the second inductor 19 a be arranged adjacent to each other.

[0163] In addition, it is preferable that the direction of the winding axis of the first inductor 18 a and the direction of the winding axis of the second inductor 19 a are parallel to each other.

[0164] (2) Action

[0165] Below, refer to Figure 7 A and Figure 7 The operation of the high-frequency module 1 according to the fourth embodiment will be described with reference to FIG.

[0166] In the high frequency module 1 according to the fourth embodiment, when receiving a signal in the first communication frequency band, Figure 7As shown in A, the switch 43 is set to the first state. Therefore, the low noise amplifier 51 is connected to the first filter 131 via the first inductor 18a. And the path between the first inductor 18a and the first filter 131 is connected to the ground electrode via the second inductor 19a. Therefore, when the high frequency module 1 receives the reception signal of the first communication frequency band, it is possible to remove the transmission signal of the first communication frequency band entering the switch 43 from the first filter 131 with high accuracy.

[0167] On the other hand, in the high frequency module 1 according to the fourth embodiment, when receiving a signal in the second communication frequency band, as shown in FIG. Figure 7 As shown in B, the switch 43 is set to the second state. Thus, the low-noise amplifier 51 is connected to the second filter 141 via the second inductor 19a. And, the path between the low-noise amplifier 51 and the second inductor 19a is connected to the ground electrode via the first inductor 18a. That is, the high-frequency module 1 exchanges the inductor connected to the low-noise amplifier 51 with the inductor connected to the ground electrode when receiving a reception signal of the first communication frequency band and when receiving a reception signal of the second communication frequency band. Thus, the high-frequency module 1 can easily change the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 43 and the low-noise amplifier 51 when receiving a reception signal of the first communication frequency band and when receiving a reception signal of the second communication frequency band.

[0168] (3) Effect

[0169] The high frequency module 1 according to the fourth embodiment includes: a low noise amplifier 51 that amplifies a received signal; a switch 43; a first inductor 18a; a second inductor 19a; a first filter 131; and a second filter 141. The switch 43 has a first input terminal 401, a second input terminal 402, an output terminal 431, a first input-output terminal 432, a second input-output terminal 433, a third input-output terminal 434, and a ground terminal 400. The first inductor 18a is connected between the path between the input terminal and the output terminal 431 of the low noise amplifier 51 and the first input-output terminal 432. The second inductor 19a is connected between the second input-output terminal 433 and the third input-output terminal 434. The first filter 131 is connected to the first input terminal 401 and has a passband including a reception band of the first communication frequency band. The second filter 141 is connected to the second input terminal 402 and has a passband including a reception band of the second communication frequency band. The gap between transmission and reception of the second communication frequency band is wider than the gap between transmission and reception of the first communication frequency band. The switch 43 can switch between the first state and the second state. In the first state of the switch 43, the first input terminal 401 is connected to the first input-output terminal 432, and the first input terminal 401 is connected to the third input-output terminal 434, and the second input-output terminal 433 is connected to the ground terminal 400, and the second input terminal 402 is not connected to the second input-output terminal 433, and the third input-output terminal 434 is not connected to the output terminal 431, and the first input-output terminal 432 is not connected to the ground terminal 400. In the second state of the switch 43, the second input terminal 402 is connected to the second input-output terminal 433, and the third input-output terminal 434 is connected to the output terminal 431, and the first input-output terminal 432 is connected to the ground terminal 400, and the first input terminal 401 is not connected to the first input-output terminal 432, and the first input terminal 401 is not connected to the third input-output terminal 434, and the second input-output terminal 433 is not connected to the ground terminal 400.

[0170] Thus, in the high frequency module 1, when receiving a reception signal of the first communication frequency band, the switch 43 is in the first state, thereby reducing the leakage of the transmission signal of the first communication frequency band to the low noise amplifier 51. In addition, in the high frequency module 1, when receiving a reception signal of the second communication frequency band, the switch 43 is in the second state, thereby reducing the loss of the reception signal of the second communication frequency band.

[0171] (Implementation method 5)

[0172] (1) Action

[0173] The high frequency module 1 according to the fifth embodiment has the same structure as the high frequency module 1 according to the fourth embodiment. In the high frequency module 1 according to the fifth embodiment, the switch 43 can be switched between the third state and the fourth state in addition to the first state and the second state.

[0174] In the third state, if Figure 8 As shown in A, the first input terminal 401 is connected to the second input-output terminal 433, and the first input-output terminal 432 is connected to the third input-output terminal 434. In the third state, the second input terminal 402 is not connected to the first input-output terminal 432, the second input terminal 402 is not connected to the second input-output terminal 433, and the third input-output terminal 434 is not connected to the output terminal 431. That is, in the third state, the series circuit of the first inductor 18a and the second inductor 19a is connected between the first filter 131 and the low-noise amplifier 51.

[0175] In addition, in the fourth state, if Figure 8 As shown in B, the second input terminal 402 is connected to the first input-output terminal 432, and the second input terminal 402 is connected to the second input-output terminal 433, and the third input-output terminal 434 is connected to the output terminal 431. In the fourth state, the first input terminal 401 is not connected to the second input-output terminal 433, and the first input-output terminal 432 is not connected to the third input-output terminal 434. That is, in the fourth state, the parallel circuit of the first inductor 18a and the second inductor 19a is connected between the second filter 141 and the low-noise amplifier 51.

[0176] Thus, the high-frequency module 1 can easily change the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 43 and the low-noise amplifier 51 when receiving a signal in the first communication frequency band or a signal in the second communication frequency band.

[0177] In addition, in the high-frequency module 1 involved in the fifth embodiment, the switch 43 may be set to the third state when receiving a reception signal of the first communication frequency band, and the switch 43 may be set to the second state when receiving a reception signal of the second communication frequency band. Similarly, in the high-frequency module 1 involved in the fifth embodiment, the switch 43 may be set to the first state when receiving a reception signal of the first communication frequency band, and the switch 43 may be set to the fourth state when receiving a reception signal of the second communication frequency band.

[0178] In addition, in the high-frequency module 1 involved in Embodiment 5, it can also be set that, when receiving a reception signal of the first communication frequency band, the same connection as in the fourth state is performed. That is, it can also be that, when receiving a reception signal of the first communication frequency band, the first input terminal 401 is connected to the first input-output terminal 432, the first input terminal 401 is connected to the second input-output terminal 433, and the third input-output terminal 434 is connected to the output terminal 431. In this case, the second input terminal 402 is not connected to the second input-output terminal 433, and the first input-output terminal 432 is not connected to the third input-output terminal 434.

[0179] In addition, in the high-frequency module 1 involved in the fifth embodiment, it is also possible to set that, when receiving a reception signal of the second communication frequency band, the same connection as the third state is performed. That is, it is also possible that the second input terminal 402 is connected to the second input-output terminal 433, and the first input-output terminal 432 is connected to the third input-output terminal 434. In this case, the first input terminal 401 is not connected to the first input-output terminal 432, the first input terminal 401 is not connected to the second input-output terminal 433, and the third input-output terminal 434 is not connected to the output terminal 431.

[0180] Thus, in the high frequency module 1, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, at least one of the leakage of the transmission signal of the first communication frequency band to the low noise amplifier 51 and the loss of the reception signal of the second communication frequency band can be reduced. Furthermore, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, the reception characteristics can be optimized.

[0181] (2) Effect

[0182] In the high-frequency module 1 involved in embodiment 5, the switch 43 can be switched to the following state: one of the first input terminal 401 and the second input terminal 402 is connected to the second input-output terminal 433, and the first input-output terminal 432 is connected to the third input-output terminal 434, and the other of the first input terminal 401 and the second input terminal 402 is not connected to the first input-output terminal 432, and the other of the first input terminal 401 and the second input terminal 402 is not connected to the second input-output terminal 433, and the third input-output terminal 434 is not connected to the output terminal 431. In addition, in the high frequency module 1 according to the fifth embodiment, the switch 43 can be switched to the following state: the other of the first input terminal 401 and the second input terminal 402 is connected to the first input / output terminal 432, and the other of the first input terminal 401 and the second input terminal 402 is connected to the second input / output terminal 433, and the third input / output terminal 434 is connected to the output terminal 431, and the one of the first input terminal 401 and the second input terminal 402 is not connected to the second input / output terminal 433, and the first input / output terminal 432 is not connected to the third input / output terminal 434. Thus, in the high frequency module 1, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, at least one of the reduction of the leakage of the transmission signal of the first communication frequency band to the low noise amplifier 51 and the reduction of the loss of the reception signal of the second communication frequency band can be performed. Furthermore, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, the reception characteristics can be optimized.

[0183] (Implementation 6)

[0184] (1) Action

[0185] The high frequency module 1 according to the sixth embodiment has the same structure as the high frequency module 1 according to the fourth embodiment. In the high frequency module 1 according to the sixth embodiment, the switch 43 can be switched to a fifth state and a sixth state in addition to the first state and the second state.

[0186] In the fifth state, if Fig. 9 As shown in A, the first input terminal 401 is connected to the first input-output terminal 432. In the fifth state, the second input terminal 402 is not connected to the second input-output terminal 433, and the third input-output terminal 434 is not connected to the output terminal 431. That is, in the fifth state, the first inductor 18a is connected between the first filter 131 and the low-noise amplifier 51.

[0187] In addition, in the sixth state, if Fig. 9As shown in B, the second input terminal 402 is connected to the second input-output terminal 433, and the third input-output terminal 434 is connected to the output terminal 431. In the sixth state, the first input terminal 401 is not connected to the first input-output terminal 432. That is, in the sixth state, the second inductor 19a is connected between the second filter 141 and the low noise amplifier 51.

[0188] Thus, the high-frequency module 1 can easily change the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 43 and the low-noise amplifier 51 when receiving a signal in the first communication frequency band or a signal in the second communication frequency band.

[0189] In addition, in the high-frequency module 1 involved in the sixth embodiment, the switch 43 may be set to the fifth state when receiving a reception signal of the first communication frequency band, and the switch 43 may be set to the second state when receiving a reception signal of the second communication frequency band. Similarly, in the high-frequency module 1 involved in the sixth embodiment, the switch 43 may be set to the first state when receiving a reception signal of the first communication frequency band, and the switch 43 may be set to the sixth state when receiving a reception signal of the second communication frequency band.

[0190] In addition, in the high-frequency module 1 involved in the sixth embodiment, when receiving a reception signal of the second communication frequency band, the same connection as in the fifth state may be performed. That is, the second input terminal 402 may be connected to the first input-output terminal 432. In this case, the first input terminal 401 is not connected to the second input-output terminal 433, and the third input-output terminal 434 is not connected to the output terminal 431.

[0191] In addition, in the high-frequency module 1 involved in the sixth embodiment, when receiving a reception signal of the first communication frequency band, the same connection as in the sixth state may be performed. That is, the first input terminal 401 may be connected to the second input-output terminal 433, and the third input-output terminal 434 may be connected to the output terminal 431. In this case, the second input terminal 402 is not connected to the first input-output terminal 432.

[0192] Thus, in the high frequency module 1, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, at least one of the leakage of the transmission signal of the first communication frequency band to the low noise amplifier 51 and the loss of the reception signal of the second communication frequency band can be reduced. Furthermore, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, the reception characteristics can be optimized.

[0193] (2) Effect

[0194] In the high-frequency module 1 according to the sixth embodiment, the switch 43 can be switched to a state in which one of the first input terminal 401 and the second input terminal 402 is connected to the first input-output terminal 432, the other of the first input terminal 401 and the second input terminal 402 is not connected to the second input-output terminal 433, and the third input-output terminal 434 is not connected to the output terminal 431. In addition, in the high-frequency module 1 according to the sixth embodiment, the switch 43 can be switched to a state in which the other of the first input terminal 401 and the second input terminal 402 is connected to the second input-output terminal 433, the third input-output terminal 434 is connected to the output terminal 431, and the one of the first input terminal 401 and the second input terminal 402 is not connected to the first input-output terminal 432. Thus, in the high frequency module 1, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, at least one of the leakage of the transmission signal of the first communication frequency band to the low noise amplifier 51 and the loss of the reception signal of the second communication frequency band can be reduced. Furthermore, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, the reception characteristics can be optimized.

[0195] (Implementation 7)

[0196] (1) Structure

[0197] like Fig.10 and Fig.11 As shown, compared with the structure of the high-frequency module 1 according to the fourth embodiment, the high-frequency module 1 according to the seventh embodiment further includes a third inductor 18b and a fourth inductor 19b, and includes a switch 44 instead of the switch 43. In addition, the high-frequency module 1 according to the seventh embodiment includes all the structures of the high-frequency module 1 according to the fourth embodiment except the switch 43, and therefore the description of the same structures is omitted.

[0198] The switch 44 is a switch for selecting which of the first inductor 18a, the second inductor 19a, the third inductor 18b, the fourth inductor 19b and the low noise amplifier 51 the first filter 131 of the duplexer 13 and the second filter 141 of the duplexer 14 are connected to. In addition, the switch 44 is a switch for selecting whether to connect the first inductor 18a, the second inductor 19a, the third inductor 18b and the fourth inductor 19b to each other. In addition, the switch 44 is a switch for selecting which of the first inductor 18a, the second inductor 19a, the third inductor 18b and the fourth inductor 19b the ground electrode is connected to. The switch 44 can be composed of a DPDT (Dual Pole Dual Throw) type switch, for example.

[0199] The switch 44 has a first input terminal 401, a second input terminal 402, and a ground terminal 400. The first input terminal 401 is connected to the first filter 131 of the duplexer 13. The second input terminal 402 is connected to the second filter 141 of the duplexer 14. The ground terminal 400 is connected to a ground electrode.

[0200] The switch 44 further includes an output terminal 431, a first input-output terminal 432, a second input-output terminal 433, a third input-output terminal 434, a fourth input-output terminal 441, a fifth input-output terminal 442, and a sixth input-output terminal 443. The output terminal 431 is connected to the low-noise amplifier 51. The first input-output terminal 432 is connected to the first inductor 18a. That is, the first inductor 18a is connected between the path between the output terminal 431 and the low-noise amplifier 51 and the first input-output terminal 432. The second input-output terminal 433 and the third input-output terminal 434 are connected to the second inductor 19a. More specifically, the second inductor 19a is connected between the second input-output terminal 433 and the third input-output terminal 434. The fourth input-output terminal 441 is connected to the third inductor 18b. That is, the third inductor 18b is connected between the path between the output terminal 431 and the low-noise amplifier 51 and the fourth input-output terminal 441. The fifth input / output terminal 442 and the sixth input / output terminal 443 are connected to the fourth inductor 19 b . More specifically, the fourth inductor 19 b is connected between the fifth input / output terminal 442 and the sixth input / output terminal 443 .

[0201] The switch 44 can switch between a first state and a seventh state.

[0202] In the first state, if Fig.10 As shown, the first input terminal 401 is connected to the first input-output terminal 432, the first input terminal 401 is connected to the third input-output terminal 434, and the second input-output terminal 433 is connected to the ground terminal 400. In the first state, the second input terminal 402 is not connected to the fourth input-output terminal 441, the second input terminal 402 is not connected to the sixth input-output terminal 443, and the fifth input-output terminal 442 is not connected to the ground terminal 400. That is, in the first state, the first inductor 18a is connected between the first filter 131 and the low-noise amplifier 51. In addition, in the first state, the path between the first inductor 18a and the first filter 131 is connected to the ground electrode via the second inductor 19a.

[0203] In addition, in the seventh state, if Fig.11As shown, the second input terminal 402 is connected to the fourth input-output terminal 441, and the second input terminal 402 is connected to the sixth input-output terminal 443, and the fifth input-output terminal 442 is connected to the ground terminal 400. In the seventh state, the first input terminal 401 is not connected to the first input-output terminal 432, and the first input terminal 401 is not connected to the third input-output terminal 434, and the second input-output terminal 433 is not connected to the ground terminal 400. That is, in the seventh state, the third inductor 18b is connected between the second filter 141 and the low-noise amplifier 51. In addition, in the seventh state, the path between the third inductor 18b and the second filter 141 is connected to the ground electrode via the fourth inductor 19b.

[0204] The switch 44 is controlled by, for example, the RF signal processing circuit 21 of the signal processing circuit 2 .

[0205] (2) Action

[0206] In the first state, if Fig.10 As shown, the first input terminal 401 is connected to the first input-output terminal 432, the first input terminal 401 is connected to the third input-output terminal 434, and the second input-output terminal 433 is connected to the ground terminal 400. That is, in the first state, the first inductor 18a is connected between the first filter 131 and the low-noise amplifier 51. In addition, in the first state, the path between the first inductor 18a and the first filter 131 is connected to the ground electrode via the second inductor 19a.

[0207] In addition, in the seventh state, if Fig.11 As shown, the second input terminal 402 is connected to the fourth input-output terminal 441, the second input terminal 402 is connected to the sixth input-output terminal 443, and the fifth input-output terminal 442 is connected to the ground terminal 400. That is, in the seventh state, the third inductor 18b is connected between the second filter 141 and the low-noise amplifier 51. In addition, in the seventh state, the path between the third inductor 18b and the second filter 141 is connected to the ground electrode via the fourth inductor 19b.

[0208] Thus, the high-frequency module 1 can easily change the characteristics of the circuit between the first input terminal 401 or the second input terminal 402 of the switch 44 and the low-noise amplifier 51 when receiving a signal in the first communication frequency band or a signal in the second communication frequency band.

[0209] In addition, in the high-frequency module 1 involved in Embodiment 7, it is also possible to set the switch 44 to the second state when receiving a reception signal of the second communication frequency band, and to perform the same connection as the seventh state when receiving a reception signal of the first communication frequency band. That is, it is also possible to set the first input terminal 401 to be connected to the fourth input-output terminal 441, the first input terminal 401 to be connected to the sixth input-output terminal 443, and the fifth input-output terminal 442 to the ground terminal 400 when receiving a reception signal of the first communication frequency band. At this time, the second input terminal 402 is not connected to the first input-output terminal 432, the second input terminal 402 is not connected to the third input-output terminal 434, and the second input-output terminal 433 is not connected to the ground terminal 400.

[0210] Thus, in the high frequency module 1, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, it is possible to reduce the leakage of the transmission signal of the first communication frequency band to the low noise amplifier 51. In addition, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, it is possible to optimize the reception characteristics.

[0211] (3) Effect

[0212] The high frequency module 1 according to Embodiment 7 further includes a third inductor 18b and a fourth inductor 19b. The switch 44 includes a fourth input / output terminal 441, a fifth input / output terminal 442, and a sixth input / output terminal 443. The third inductor 18b is connected between the path between the input terminal and the output terminal 431 of the low noise amplifier 51 and the fourth input / output terminal 441. The fourth inductor 19b is connected between the fifth input / output terminal 442 and the sixth input / output terminal 443. The switch 44 can be switched to the following states: connecting one of the first input terminal 401 and the second input terminal 402 to the fourth input-output terminal 441, and connecting the one of the first input terminal 401 and the second input terminal 402 to the sixth input-output terminal 443, and connecting the fifth input-output terminal 442 to the ground terminal 400, and not connecting the other of the first input terminal 401 and the second input terminal 402 to the first input-output terminal 432, and not connecting the other of the first input terminal 401 and the second input terminal 402 to the third input-output terminal 434, and not connecting the second input-output terminal 433 to the ground terminal 400.

[0213] Thus, in the high frequency module 1, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, it is possible to reduce the leakage of the transmission signal of the first communication frequency band to the low noise amplifier 51. In addition, when receiving the reception signal of the first communication frequency band and when receiving the reception signal of the second communication frequency band, it is possible to optimize the reception characteristics.

[0214] (Variation Example)

[0215] Next, modifications of the embodiment will be described.

[0216] like Fig.13 As shown, the high-frequency module 1 involved in embodiments 1 to 7 may also include an IC chip 73a that includes a second inductor 19 in addition to the low-noise amplifier 51 and the switch 40, instead of the IC chip 73 and the second inductor 19. The second inductor 19 is, for example, an IPD (Integrated Passive Device) formed on a silicon substrate by a thin film process. That is, the second inductor 19 is not formed on the first main surface 61 of the substrate 6, but is formed inside the IC chip 73a. As a result, the second inductor 19 can be miniaturized and can be connected to the switch 40 inside the IC chip 73a, thereby reducing the loss of the received signal. In addition, the IC chip 73a may include a switch 43 or 44 instead of the switch 40, and may include a second inductor 19a instead of the second inductor 19.

[0217] In the high-frequency modules 1 according to the first to seventh embodiments, the first inductor 18 or 18a may overlap with the IC chip 73 including the switch 40, 43, or 44 when viewed from the third direction D3. Here, "the first inductor 18 or 18a overlaps with the IC chip 73 when viewed from the third direction D3" means that at least a portion of the first inductor 18 or 18a overlaps with at least a portion of the IC chip 73 when viewed from the third direction D3. Thus, the length of the wiring portion between the first inductor 18 or 18a and the switch 40, 43, or 44 can be shortened, and the loss of the received signal of the high-frequency module 1 can be reduced.

[0218] Furthermore, the high-frequency module 1 according to the first to seventh embodiments may be a high-frequency module for reception that does not include the transmission filters 132 and 142 , the switch 15 , the matching circuit 16 , and the power amplifier 17 .

[0219] In the high-frequency module 1 according to the seventh embodiment, the switch 44 may be capable of connection similar to any of the first to sixth states of the switch 43 in the high-frequency module 1 according to each of the third to sixth embodiments. Similarly, in the high-frequency module 1 according to the sixth embodiment, the switch 43 may be capable of connection similar to the third or fourth state of the switch 43 in the high-frequency module 1 according to the fourth embodiment.

[0220] In addition, the high frequency module 1 involved in the first to seventh embodiments may be capable of receiving reception signals of three or more communication frequency bands, and the switches 40, 43, 44, or the first switch 41 and the second switches 42, 42a may switch between three or more states depending on which communication frequency band the reception signal is received. The three or more states are the first to seventh states described above, or states in which a terminal connected to a filter for reception is connected instead of the first input terminal 401 or the second input terminal 402, in relation to the first to seventh states described above.

[0221] In addition, the high-frequency module 1 according to the third embodiment may include a single switch capable of performing similar connection instead of the first switch 41 and the second switch 42 a .

[0222] In the high-frequency module 1 according to the fourth to seventh embodiments, the second input-output terminal 433 and the third input-output terminal 434 may be connected in one or more of the first to seventh states of the switch 43 or 44. This is because the second input-output terminal 433 and the third input-output terminal 434 correspond to the two ends of the second inductor 19a, respectively, and may be used in reverse. Similarly, in the high-frequency module 1 according to the seventh embodiment, the fifth input-output terminal 442 and the sixth input-output terminal 443 may be connected in one or more of the states of the switch 44.

[0223] (Way)

[0224] The high-frequency module (1) involved in the first embodiment includes a low-noise amplifier (51), a switch (40), a first inductor (18), a second inductor (19), a first filter (131) and a second filter (141). The switch (40) has a first input terminal (401), a second input terminal (402), an output terminal (403), an input-output terminal (404) and a ground terminal (400). The first inductor (18) is connected between the low-noise amplifier (51) and the output terminal (403). The second inductor (19) is connected between the path between the first inductor (18) and the output terminal (403) and the input-output terminal (404). The first filter (131) is connected to the first input terminal (401) and has a passband including a reception band of a first communication frequency band. The second filter (141) is connected to the second input terminal (402) and has a passband including a reception band of a second communication frequency band. The gap (G1) between transmission and reception of the second communication frequency band is wider than the gap (G1) between transmission and reception of the first communication frequency band. The switch (40) is capable of switching between a first state and a second state. In the first state of the switch (40), the first input terminal (401) is connected to the output terminal (403), and the input-output terminal (404) is connected to the ground terminal (400), and the second input terminal (402) is not connected to the input-output terminal (404). In the second state of the switch (40), the second input terminal (402) is connected to the input-output terminal (404), and the first input terminal (401) is not connected to the output terminal (403), and the input-output terminal (404) is not connected to the ground terminal (400).

[0225] According to the high-frequency module (1) involved in the above-mentioned method, when receiving a reception signal of the first communication frequency band, the switch (40) is in the first state, thereby reducing the leakage of the transmission signal of the first communication frequency band to the low-noise amplifier (51). In addition, in the high-frequency module (1), when receiving a reception signal of the second communication frequency band, the switch (40) is in the second state, thereby reducing the loss of the reception signal of the second communication frequency band.

[0226] Regarding the high-frequency module (1) involved in the second embodiment, in the first embodiment, the switch (40) includes a first switch (41) and a second switch (42). The first switch (41) has a first input terminal (401) and an output terminal (403), and can switch between connection and non-connection of the first input terminal (401) and the output terminal (403). The second switch (42) has a second input terminal (402), an input-output terminal (404), and a ground terminal (400), and can connect the input-output terminal (404) to the second input terminal (402) or the ground terminal (400). In a first state, the first switch (41) connects the first input terminal (401) to the output terminal (403). In a first state, the second switch (42) connects the input-output terminal (404) to the ground terminal (400), and does not connect the second input terminal (402) to the input-output terminal (404). In the second state, the first switch (41) does not connect the first input terminal (401) to the output terminal (403). In the second state, the second switch (42) connects the second input terminal (402) to the input / output terminal (404) and does not connect the input / output terminal (404) to the ground terminal (400).

[0227] According to the high-frequency module (1) involved in the above-mentioned method, when receiving a reception signal of the first communication frequency band, the leakage of the transmission signal of the first communication frequency band to the low-noise amplifier (51) can be reduced. In addition, in the high-frequency module (1), when receiving a reception signal of the second communication frequency band, the loss of the reception signal of the second communication frequency band can be reduced. In addition, in the high-frequency module (1), the switch (40) is separated into a first switch (41) and a second switch (42), so that the loss in the switch (40) can be reduced.

[0228] The high frequency module (1) according to the third embodiment, in any one of the first and second embodiments, further comprises a second low noise amplifier (512) and a third inductor (189). The second low noise amplifier (512) is different from the first low noise amplifier (51). The third inductor (189) is connected to the second low noise amplifier (512). The third inductor (189) is connected between the path between the second inductor (19) and the first inductor (18) and the second low noise amplifier (512).

[0229] According to the high-frequency module (1) involved in the above-mentioned method, in receiving a communication frequency band different from the first communication frequency band and the second communication frequency band, the second low-noise amplifier (512) can be used, and the third inductor (189) and the second inductor (19) are connected between the second low-noise amplifier (512) and the receiving path of the communication frequency band. Therefore, the receiving characteristics of the third communication frequency band can be optimized.

[0230] The high-frequency module (1) involved in the fourth embodiment includes a low-noise amplifier (51), a switch (43; 44), a first inductor (18a), a second inductor (19a), a first filter (131) and a second filter (141). The switch (43; 44) has a first input terminal (401), a second input terminal (402), an output terminal (431), a first input-output terminal (432), a second input-output terminal (433), a third input-output terminal (434) and a ground terminal (400). The first inductor (18a) is connected between the path between the low-noise amplifier (51) and the output terminal (431) and the first input-output terminal (432). The second inductor (19a) is connected between the second input-output terminal (433) and the third input-output terminal (434). The first filter (131) is connected to the first input terminal (401) and has a passband including a reception frequency band of a first communication frequency band. The second filter (141) is connected to the second input terminal (402) and has a passband including a receiving frequency band of the second communication frequency band. The gap (G1) between transmission and reception of the second communication frequency band is wider than the gap (G1) between transmission and reception of the first communication frequency band. The switch (43; 44) is capable of switching between a first state and a second state. In the first state of the switch (43; 44), the first input terminal (401) is connected to the first input-output terminal (432), and the first input terminal (401) is connected to the third input-output terminal (434), and the second input-output terminal (433) is connected to the ground terminal (400), and the second input terminal (402) is not connected to the second input-output terminal (433), and the third input-output terminal (434) is not connected to the output terminal (431), and the first input-output terminal (432) is not connected to the ground terminal (400). When the switch (43; 44) is in the second state, the second input terminal (402) is connected to the second input-output terminal (433), and the third input-output terminal (434) is connected to the output terminal (431), and the first input-output terminal (432) is connected to the ground terminal (400), and the first input terminal (401) is not connected to the first input-output terminal (432), and the first input terminal (401) is not connected to the third input-output terminal (434), and the second input-output terminal (433) is not connected to the ground terminal (400).

[0231] According to the high-frequency module (1) involved in the above-mentioned method, when receiving a reception signal of the first communication frequency band, the switch (43) is in the first state, thereby reducing the leakage of the transmission signal of the first communication frequency band to the low-noise amplifier (51). In addition, in the high-frequency module (1), when receiving a reception signal of the second communication frequency band, the switch (43) is in the second state, thereby reducing the loss of the reception signal of the second communication frequency band.

[0232] Regarding the high-frequency module (1) involved in the fifth embodiment, in the fourth embodiment, the switch (43; 44) can also be switched to at least one of the following states: one of the first input terminal (401) and the second input terminal (402) is connected to the second input-output terminal (433), and the first input-output terminal (432) is connected to the third input-output terminal (434), and the other of the first input terminal (401) and the second input terminal (402) is not connected to the first input-output terminal (432), and the other of the first input terminal (401) and the second input terminal (402) is not connected to the second input-output terminal (433), and the third input-output terminal (434) is not connected. The invention relates to a state in which the output terminal (434) is connected to the output terminal (431); and a state in which the other of the first input terminal (401) and the second input terminal (402) is connected to the first input-output terminal (432), and the other of the first input terminal (401) and the second input terminal (402) is connected to the second input-output terminal (433), and the third input-output terminal (434) is connected to the output terminal (431), and the one of the first input terminal (401) and the second input terminal (402) is not connected to the second input-output terminal (433), and the first input-output terminal (432) is not connected to the third input-output terminal (434).

[0233] According to the high-frequency module (1) involved in the above-mentioned method, when receiving a reception signal of the first communication frequency band and when receiving a reception signal of the second communication frequency band, at least one of the leakage of the transmission signal of the first communication frequency band to the low-noise amplifier (51) can be reduced and the loss of the reception signal of the second communication frequency band can be reduced. Furthermore, when receiving a reception signal of the first communication frequency band and when receiving a reception signal of the second communication frequency band, the reception characteristics can be optimized.

[0234] Regarding the high-frequency module (1) involved in the sixth embodiment, in any one of the fourth and fifth embodiments, the switch (43; 44) can also be switched to at least one of the following states: a state in which one of the first input terminal (401) and the second input terminal (402) is connected to the first input-output terminal (432), and the other of the first input terminal (401) and the second input terminal (402) is not connected to the second input-output terminal (433), and the third input-output terminal (434) is not connected to the output terminal (431); and a state in which the other of the first input terminal (401) and the second input terminal (402) is connected to the second input-output terminal (433), and the third input-output terminal (434) is connected to the output terminal (431), and the one of the first input terminal (401) and the second input terminal (402) is not connected to the first input-output terminal (432).

[0235] According to the high-frequency module (1) involved in the above-mentioned method, when receiving a reception signal of the first communication frequency band and when receiving a reception signal of the second communication frequency band, at least one of the leakage of the transmission signal of the first communication frequency band to the low-noise amplifier (51) can be reduced and the loss of the reception signal of the second communication frequency band can be reduced. Furthermore, when receiving a reception signal of the first communication frequency band and when receiving a reception signal of the second communication frequency band, the reception characteristics can be optimized.

[0236] The high frequency module (1) according to the seventh aspect is, in any one of the fourth aspect to the sixth aspect, further comprising a third inductor (18b) and a fourth inductor (19b). The switch (44) further comprises a fourth input / output terminal (441), a fifth input / output terminal (442), and a sixth input / output terminal (443). The third inductor (18b) is connected between the path between the low noise amplifier (51) and the output terminal (431) and the fourth input / output terminal (441). The fourth inductor (19b) is connected between the fifth input / output terminal (442) and the sixth input / output terminal (443). The switch (44) can also be switched to a state in which one of the first input terminal (401) and the second input terminal (402) is connected to the fourth input / output terminal (441), and the one of the first input terminal (401) and the second input terminal (402) is connected to the sixth input / output terminal (443), and the fifth input / output terminal (442) is connected to the ground terminal (400), and the other of the first input terminal (401) and the second input terminal (402) is not connected to the first input / output terminal (432), and the other of the first input terminal (401) and the second input terminal (402) is not connected to the third input / output terminal (434), and the second input / output terminal (433) is not connected to the ground terminal (400).

[0237] According to the high-frequency module (1) involved in the above-mentioned method, when receiving a reception signal of the first communication frequency band and when receiving a reception signal of the second communication frequency band, the leakage of the transmission signal of the first communication frequency band to the low-noise amplifier (51) can be reduced. In addition, when receiving a reception signal of the first communication frequency band and when receiving a reception signal of the second communication frequency band, the reception characteristics can be optimized.

[0238] The high-frequency module (1) according to the eighth aspect is, in any one of the first to seventh aspects, further comprising a substrate (6). The substrate (6) has a first main surface (61) and a second main surface (62) facing each other. The first inductor (18; 18a) and the second inductor (19; 19a) are adjacently arranged on the first main surface (61) of the substrate (6). The direction (A1) of the winding axis of the first inductor (18; 18a) and the direction (A2) of the winding axis of the second inductor (19; 19a) are parallel to each other.

[0239] According to the high-frequency module (1) involved in the above aspect, when both the first inductor (18) and the second inductor (19) are used, the loss of the received signal in the first communication frequency band or the received signal in the second communication frequency band can be reduced.

[0240] Regarding the high frequency module (1) according to the ninth aspect, in any one of the first to eighth aspects, the transmission signal of the first communication frequency band is a transmission signal of power level 2. The transmission signal of the second communication frequency band is a transmission signal having a lower maximum output power than power level 2.

[0241] According to the high-frequency module (1) involved in the above-mentioned method, when receiving a reception signal in the first communication frequency band, the leakage of the transmission signal in the first communication frequency band to the low-noise amplifier (51) can be reduced, and when receiving a reception signal in the second communication frequency band, the loss of the reception signal in the second communication frequency band can be reduced.

[0242] The high frequency module (1) according to the tenth aspect is, in any one of the first to ninth aspects, further comprising a transmission filter (132). The transmission filter (132) has a passband including a transmission frequency band of a first communication frequency band. The first filter (131) and the transmission filter (132) constitute a duplexer (13).

[0243] According to the high frequency module (1) involved in the above aspect, while supporting both the transmission of transmission signals and the reception of reception signals in the first communication frequency band, the influence of the transmission signals in the first communication frequency band on the reception operation in the first communication frequency band can be reduced.

[0244] The high frequency module (1) according to the eleventh aspect is, in any one of the first to tenth aspects, further comprising a transmission filter (142). The transmission filter (142) has a passband including a transmission frequency band of a second communication frequency band. The second filter (141) and the transmission filter (142) constitute a duplexer (14).

[0245] According to the high frequency module (1) involved in the above aspect, while supporting both the transmission of transmission signals and the reception of reception signals in the second communication frequency band, the influence of the transmission signals in the second communication frequency band on the reception operation in the second communication frequency band can be reduced.

[0246] The high-frequency module (1) according to the twelfth aspect is, in any one of the first to eleventh aspects, further comprising a substrate (6). The substrate (6) has a first main surface (61) and a second main surface (62) facing each other. The first inductor (18; 18a) and the second inductor (19; 19a) are arranged on the first main surface (61) of the substrate (6). When viewed from above in the thickness direction (D3) of the substrate (6), the first inductor (18; 18a) is larger than the second inductor (19; 19a).

[0247] According to the high-frequency module (1) involved in the above-mentioned mode, when the first inductor (18; 18a) is connected between the low-noise amplifier (51) and the first filter (131) or the second filter (141), the loss of the received signal can be reduced. In addition, when the first inductor (18; 18a) and the second inductor (19; 19a) are connected between the low-noise amplifier (51) and the first filter (131) or the second filter (141), the influence of the second inductor (19; 19a) is also low, so it is not easy to cause an increase in the loss of the received signal.

[0248] A high-frequency module (1) according to a thirteenth aspect is, in any one of the first to twelfth aspects, further comprising an IC chip (73a) including a second inductor (19) and a switch (40; 43; 44).

[0249] According to the high-frequency module (1) involved in the above-mentioned aspect, the second inductor (19; 19a) can be miniaturized and connected to the switch (40; 43; 44) inside the IC chip (73a), thereby reducing the loss of the received signal.

[0250] Regarding the high-frequency module (1) involved in the 14th embodiment, in any one of the 1st to 12th embodiments, it further includes a substrate (6) and an IC chip (73). The substrate (6) has a first main surface (61) and a second main surface (62) facing each other. The IC chip (73) includes a low-noise amplifier (51). The first inductor (18; 18a) is arranged on the first main surface (61) of the substrate (6). The IC chip (73) is arranged on the second main surface (62) of the substrate (6). When viewed from above in the thickness direction (D3) of the substrate (6), the first inductor (18; 18a) and the IC chip (73) overlap.

[0251] According to the high-frequency module (1) involved in the above aspect, the length of the wiring portion between the first inductor (18; 18a) and the low-noise amplifier (51) can be shortened, thereby reducing the loss of the received signal of the high-frequency module (1).

[0252] Regarding the high-frequency module (1) involved in the 15th aspect, in the 14th aspect, the IC chip (73) further includes a switch (40; 43; 44). The second inductor (19; 19a) is arranged on the first main surface (61) of the substrate (6). The IC chip (73) is arranged on the second main surface (62) of the substrate (6). When viewed from above in the thickness direction (D3) of the substrate (6), the second inductor (19; 19a) overlaps with the IC chip (73).

[0253] Regarding the high-frequency module (1) involved in the 16th embodiment, in any one of the 1st to 12th embodiments, it also includes a substrate (6) and an IC chip (73). The substrate (6) has a first main surface (61) and a second main surface (62) facing each other. The IC chip (73) includes a low-noise amplifier (51) and a switch (40; 43; 44). The second inductor (19; 19a) is arranged on the first main surface (61) of the substrate (6). The IC chip (73) is arranged on the second main surface (62) of the substrate (6). When viewed from above in the thickness direction (D3) of the substrate (6), the second inductor (19; 19a) overlaps with the IC chip (73).

[0254] According to the high-frequency module (1) of the fifteenth or sixteenth aspect, the length of the wiring portion between the second inductor (19; 19a) and the switch (40; 43; 44) can be shortened, thereby reducing the loss of the received signal of the high-frequency module (1).

[0255] A communication device (100) according to a seventeenth aspect comprises: a high-frequency module (1) according to any one of the first to sixteenth aspects; and a signal processing circuit (2) connected to the high-frequency module (1).

[0256] According to the communication device (100) involved in the above-mentioned method, it is possible to change the characteristics of the circuit between the low-noise amplifier (51) and the first filter (131) when receiving a reception signal in the first communication frequency band, and the characteristics of the circuit between the low-noise amplifier (51) and the second filter (141) when receiving a reception signal in the second communication frequency band.

[0257] Description of Reference Numerals

[0258] 1: high frequency module; 10: switch; 101: common terminal; 102, 103: selection terminal; 11, 12, 16: matching circuit; 13: duplexer; 131: first filter; 132: transmission filter; 14: duplexer; 141: second filter; 142: transmission filter; 15: switch; 150: common terminal; 151: selection terminal; 152: selection terminal; 17: power amplifier; 18, 18a: first inductor; 181: first end; 182: second end ; 18b: third inductor; 189: third inductor; 19, 19a: second inductor; 191: first end; 192: second end; 19b: fourth inductor; 40, 43, 44: switch; 400: ground terminal; 401: first input terminal; 402: second input terminal; 403: output terminal; 404: input-output terminal; 409: third input terminal; 431: output terminal; 432: first input-output terminal; 433: second input-output terminal; 434: third Input / output terminal; 441: fourth input / output terminal; 442: fifth input / output terminal; 443: sixth input / output terminal; 41: first switch; 42, 42a: second switch; 51: first low noise amplifier (low noise amplifier); 512: second low noise amplifier; 52: external connection terminal; 521: antenna terminal; 522: signal input terminal; 523: signal output terminal; 6: substrate; 61: first main surface; 62: second main surface; 71, 73a, 72, 73 : IC chip; 100: communication device; 2: signal processing circuit; 21: RF signal processing circuit; 22: baseband signal processing circuit; 3: antenna; A1: direction of winding axis; A2: direction of winding axis; D1: first direction; D2: second direction; D3: third direction; f1, f11, f12: maximum frequency; f2, f21, f22: minimum frequency; G1, G11, G12: gap between sending and receiving; Rx1, Rx2: receiving frequency band; Tx1, Tx2: transmitting frequency band.

Claims

1. A high frequency module, comprising: Low noise amplifier; a switch having a first input terminal, a second input terminal, an output terminal, an input-output terminal, and a ground terminal; a first inductor connected between the low noise amplifier and the output terminal; a second inductor connected between a path between the first inductor and the output terminal and the input-output terminal; A first filter connected to the first input terminal and having a passband including a reception frequency band of a first communication frequency band; as well as a second filter connected to the second input terminal, having a passband including a receiving frequency band of a second communication frequency band, wherein a gap between transmission and reception of the second communication frequency band is wider than a gap between transmission and reception of the first communication frequency band, The switch can switch between a first state and a second state. In the first state, the first input terminal is connected to the output terminal, the input-output terminal is connected to the ground terminal, and the second input terminal is not connected to the input-output terminal. In the second state, the second input terminal is connected to the input-output terminal, the first input terminal is disconnected from the output terminal, and the input-output terminal is disconnected from the ground terminal.

2. The high frequency module according to claim 1, wherein: The switch comprises: a first switch having the first input terminal and the output terminal, capable of switching connection and non-connection between the first input terminal and the output terminal; and The second switch has the second input terminal, the input-output terminal, and the ground terminal, and is capable of connecting the input-output terminal to the second input terminal or the ground terminal. In the first state, The first switch connects the first input terminal to the output terminal. The second switch connects the input-output terminal to the ground terminal and does not connect the second input terminal to the input-output terminal. In the second state, The first switch does not connect the first input terminal to the output terminal, The second switch connects the second input terminal to the input-output terminal and does not connect the input-output terminal to the ground terminal.

3. The high frequency module according to claim 1 or 2, wherein: Also available: a second low noise amplifier different from the first low noise amplifier as the low noise amplifier; as well as a third inductor connected to the second low noise amplifier, The third inductor is connected between a path between the second inductor and the first inductor and the second low noise amplifier.

4. A high frequency module, comprising: Low noise amplifier; a switch having a first input terminal, a second input terminal, an output terminal, a first input-output terminal, a second input-output terminal, a third input-output terminal, and a ground terminal; A first inductor connected between a path between the low noise amplifier and the output terminal and the first input-output terminal; a second inductor connected between the second input-output terminal and the third input-output terminal; A first filter connected to the first input terminal and having a passband including a reception frequency band of a first communication frequency band; as well as a second filter connected to the second input terminal, having a passband including a receiving frequency band of a second communication frequency band, wherein a gap between transmission and reception of the second communication frequency band is wider than a gap between transmission and reception of the first communication frequency band, The switch can switch between a first state and a second state. In the first state, the first input terminal is connected to the first input / output terminal, the first input terminal is connected to the third input / output terminal, the second input / output terminal is connected to the ground terminal, the second input terminal is not connected to the second input / output terminal, the third input / output terminal is not connected to the output terminal, and the first input / output terminal is not connected to the ground terminal. In the second state, the second input terminal is connected to the second input-output terminal, and the third input-output terminal is connected to the output terminal, and the first input-output terminal is connected to the ground terminal, and the first input terminal and the first input-output terminal are not connected to each other, and the first input terminal and the third input-output terminal are not connected to each other, and the second input-output terminal is not connected to the ground terminal.

5. The high frequency module according to claim 4, wherein: The switch can also be switched to at least one of the following states: A state in which one of the first input terminal and the second input terminal is connected to the second input / output terminal, and the first input / output terminal is connected to the third input / output terminal, and the other of the first input terminal and the second input terminal is not connected to the first input / output terminal, and the other of the first input terminal and the second input terminal is not connected to the second input / output terminal, and the third input / output terminal is not connected to the output terminal; as well as A state in which the other of the first input terminal and the second input terminal is connected to the first input-output terminal, the other of the first input terminal and the second input terminal is connected to the second input-output terminal, the third input-output terminal is connected to the output terminal, and the one of the first input terminal and the second input terminal is not connected to the second input-output terminal, and the first input-output terminal is not connected to the third input-output terminal.

6. The high frequency module according to claim 4 or 5, wherein: The switch can also be switched to at least one of the following states: A state in which one of the first input terminal and the second input terminal is connected to the first input / output terminal, the other of the first input terminal and the second input terminal is not connected to the second input / output terminal, and the third input / output terminal is not connected to the output terminal; as well as The other of the first input terminal and the second input terminal is connected to the second input / output terminal, the third input / output terminal is connected to the output terminal, and the one of the first input terminal and the second input terminal is not connected to the first input / output terminal.

7. The high frequency module according to any one of claims 4 to 6, further comprising: a third inductor; and The fourth inductor, The switch further has a fourth input-output terminal, a fifth input-output terminal and a sixth input-output terminal. The third inductor is connected between the path between the low noise amplifier and the output terminal and the fourth input-output terminal. The fourth inductor is connected between the fifth input / output terminal and the sixth input / output terminal. The switch can also be switched to the following states: one of the first input terminal and the second input terminal is connected to the fourth input-output terminal, and the one of the first input terminal and the second input terminal is connected to the sixth input-output terminal, and the fifth input-output terminal is connected to the ground terminal, and the other of the first input terminal and the second input terminal is not connected to the first input-output terminal, and the other of the first input terminal and the second input terminal is not connected to the third input-output terminal, and the second input-output terminal is not connected to the ground terminal.

8. The high frequency module according to any one of claims 1 to 7, wherein: The device further comprises a substrate having a first main surface and a second main surface facing each other, wherein the first inductor and the second inductor are disposed adjacent to each other on the first main surface of the substrate. A direction of a winding axis of the first inductor and a direction of a winding axis of the second inductor are parallel to each other.

9. The high frequency module according to any one of claims 1 to 8, wherein: The transmission signal of the first communication frequency band is a transmission signal of power level 2, The transmission signal of the second communication frequency band is a transmission signal having a lower maximum output power than power level 2.

10. The high frequency module according to any one of claims 1 to 9, wherein: further comprising a first transmission filter having a passband including a transmission frequency band of the first communication frequency band, The first filter and the first transmit filter constitute a duplexer.

11. The high frequency module according to any one of claims 1 to 10, wherein: further comprising a second transmission filter having a passband including a transmission frequency band of the second communication frequency band, The second filter and the second transmit filter constitute a duplexer.

12. The high frequency module according to any one of claims 1 to 11, wherein: The invention further comprises a substrate having a first main surface and a second main surface facing each other, The first inductor and the second inductor are arranged on the first main surface of the substrate. The first inductor is larger than the second inductor when viewed in plan from a thickness direction of the substrate.

13. The high frequency module according to any one of claims 1 to 12, wherein: The device further includes an integrated circuit chip (IC chip), wherein the IC chip includes the second inductor and the switch.

14. The high frequency module according to any one of claims 1 to 12, wherein: The invention also comprises: a substrate having a first main surface and a second main surface facing each other; and an integrated circuit chip (IC chip) including the low noise amplifier. The first inductor is disposed on the first main surface of the substrate. The IC chip is arranged on the second main surface of the substrate. The first inductor overlaps with the IC chip when viewed in plan from the thickness direction of the substrate.

15. The high frequency module according to claim 14, wherein: The IC chip also includes the switch, The second inductor is disposed on the first main surface of the substrate. The second inductor overlaps with the IC chip when viewed in plan from the thickness direction of the substrate.

16. The high frequency module according to any one of claims 1 to 12, further comprising: A substrate having a first main surface and a second main surface facing each other; and An integrated circuit chip, i.e., an IC chip, comprises the low noise amplifier and the switch, The second inductor is disposed on the first main surface of the substrate. The IC chip is arranged on the second main surface of the substrate. The second inductor overlaps with the IC chip when viewed in plan from the thickness direction of the substrate.

17. A communication device comprising: The high frequency module according to any one of claims 1 to 16; and The signal processing circuit is connected to the high frequency module.

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