Silicon wafer cleaning method and device, electronic equipment and storage medium

Abstract

The embodiment of the invention provides a silicon wafer cleaning method and device, electronic equipment and a storage medium. The method comprises the following steps: according to a numerical relationship between an actual pH value and a preset pH value range, whether an identifier exists in a dirty wafer risk grade or an oxidized wafer risk, a theoretical pH value, an actual silicon wafer cleaning amount and a theoretical silicon wafer cleaning amount, determining whether the actual silicon wafer cleaning amount is smaller than the theoretical silicon wafer cleaning amount; determining a target pH value corresponding to the target medicament tank or a silicon wafer cleaning time length in a future preset time length; adding a medicament solution into the target medicament tank until the pH value of the medicament solution in the target medicament tank is the target pH value, and continuing to clean the silicon wafer; or the target agent tank cleans the silicon wafer according to the silicon wafer cleaning duration. According to the invention, the problems that oxidized wafers are generated when the surfaces of the silicon wafers are too clean and dirty wafers are generated when the surfaces of the silicon wafers are too dirty can be avoided, the production cost of the silicon wafers is reduced, and the production efficiency is improved.

Description

Technical Field

[0001] The present invention relates to the technical field of silicon wafer processing, and in particular to a silicon wafer cleaning method, device, electronic equipment and storage medium. Background Art

[0002] The silicon wafer processing process is slicing, inserting, cleaning, drying, and sorting. The working principle of the cleaning machine for cleaning silicon wafers is as follows: the inserting machine puts the cut silicon wafers into the basket, and the basket with silicon wafers enters the reagent tank and starts chemical corrosion cleaning. After cleaning, the silicon wafers enter multiple pure water tanks, and the residual metal ions, organic matter and other solid particles on the silicon wafers are removed through the comprehensive action of multiple pure water and ultrasonic waves. The alkali in the reagent tank is added according to the process parameters, and the process parameters are revised and verified based on the theoretical values.

[0003] However, when the surface of a batch of silicon wafers is too clean, oxide flakes will be produced, and when the surface of a batch of silicon wafers is too dirty, dirty flakes will appear, which will increase the production cost of silicon wafers and reduce production efficiency. Summary of the invention

[0004] In view of this, the purpose of the present application is to provide a silicon wafer cleaning method, device, electronic device and storage medium, which can avoid the problem of oxide wafers when the silicon wafer surface is too clean and dirty wafers when it is too dirty, thereby reducing the silicon wafer production cost and improving production efficiency.

[0005] In a first aspect, an embodiment of the present application provides a method for cleaning a silicon wafer, the method for cleaning a silicon wafer comprising:

[0006] Obtain the current risk level of contaminated wafers or whether there is an identification of the risk of oxidized wafers, the actual cleaning volume of silicon wafers, the theoretical cleaning volume of silicon wafers, and the actual value and theoretical value of the current pH value of the reagent solution in the target reagent tank;

[0007] Determine the target pH value corresponding to the target reagent tank or the cleaning time of the silicon wafer within the preset time period in the future according to the numerical relationship between the actual pH value and the preset pH range, whether there is an indication of the risk level of contaminated wafers or the risk of oxidized wafers, the theoretical pH value, the actual cleaning volume of the silicon wafers and the theoretical cleaning volume of the silicon wafers;

[0008] Add the reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continue to clean the silicon wafer; or make the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

[0009] In a possible implementation, the following steps are used to determine whether there is an indicator of the current contaminated tablet risk level and oxidized tablet risk corresponding to the target reagent tank:

[0010] Obtain the current silicon wafer cleaning quality corresponding to the target reagent tank and the number of silicon wafers whose silicon wafer cleaning quality is abnormally high and whose surface color brightness is greater than a preset standard color brightness;

[0011] If the number of silicon wafers is greater than the preset number of silicon wafers, then whether there is an oxidation risk mark is determined as a mark corresponding to the oxidation risk;

[0012] If the number of silicon wafers is less than the preset number of silicon wafers, the presence of an oxidation risk mark will be determined as the mark corresponding to no oxidation risk; and based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning volume and the theoretical silicon wafer cleaning volume, and the silicon wafer cleaning quality, the current contaminated wafer risk level corresponding to the target reagent tank is determined.

[0013] In a possible implementation, according to the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer, determining the current contaminated wafer risk level corresponding to the target reagent tank includes:

[0014] If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high, then the reagent solution in the target reagent tank is stirred; if the pH value of the reagent solution after stirring is less than the theoretical pH value, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk.

[0015] In a possible implementation, the current contaminated wafer risk level corresponding to the target reagent tank is determined according to the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality, including:

[0016] If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer;

[0017] If the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual silicon wafer cleaning volume to the theoretical silicon wafer cleaning volume, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk;

[0018] If the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0019] In a possible implementation, the current contaminated wafer risk level corresponding to the target reagent tank is determined according to the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality, including:

[0020] If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer;

[0021] If the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual silicon wafer cleaning volume to the theoretical silicon wafer cleaning volume, the current contaminated wafer risk level corresponding to the target reagent tank is high contaminated wafer risk;

[0022] If the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is no contaminated wafer risk.

[0023] In a possible implementation, according to the numerical relationship between the actual pH value and the preset pH range, whether there is an indicator of the risk level of contaminated wafers or the risk of oxidized wafers, the theoretical pH value, the actual cleaning amount of silicon wafers, and the theoretical cleaning amount of silicon wafers, the target pH value corresponding to the target reagent tank or the cleaning time of the silicon wafer within a preset time in the future is determined, including:

[0024] If the actual pH value is within the preset pH range corresponding to the target reagent tank, and the indicator of whether there is a risk of oxidation of the wafer is the corresponding indicator of the risk of oxidation of the wafer, then the cleaning time of the silicon wafer within the preset time in the future is calculated according to the actual pH value and the theoretical pH value;

[0025] If the actual pH value is within the preset pH range corresponding to the target reagent tank, and the contaminated wafer risk level is the target contaminated wafer risk level, the target pH value corresponding to the target reagent tank is calculated based on the actual cleaning volume of the silicon wafer, the theoretical cleaning volume of the silicon wafer and the preset pH range;

[0026] If the actual pH value is less than the lower limit of the preset pH range, the target pH value corresponding to the target reagent tank is calculated according to the actual cleaning volume of the silicon wafer, the theoretical cleaning volume of the silicon wafer and the preset pH range;

[0027] If the actual pH value is greater than the upper limit of the preset pH range, the cleaning time of the silicon wafer within the preset time period in the future is calculated based on the actual pH value and the upper limit of the preset pH range.

[0028] In a possible implementation, the target pH value corresponding to the target reagent tank is calculated according to the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range, including:

[0029] Substitute the actual cleaning volume of the silicon wafer, the theoretical cleaning volume of the silicon wafer and the preset pH range into the following formula to obtain the target pH value corresponding to the target reagent tank;

[0030] PH x =A-(C x / C total )*(AB);

[0031] Among them, PH x is the target pH value corresponding to the target reagent tank, A is the upper limit of the preset pH range, C x is the actual cleaning amount of the silicon wafer, C total is the theoretical cleaning volume of the silicon wafer, and B is the lower limit of the preset pH range.

[0032] In a second aspect, an embodiment of the present application further provides a silicon wafer cleaning device, the silicon wafer cleaning device comprising:

[0033] An acquisition module is used to obtain the current risk level of contaminated wafers or the presence of an oxidation wafer risk indicator corresponding to the target reagent tank, the actual cleaning volume of the silicon wafers, the theoretical cleaning volume of the silicon wafers, and the actual pH value and theoretical pH value of the reagent solution in the target reagent tank;

[0034] A determination module is used to determine a target pH value corresponding to a target reagent tank or a cleaning time of a silicon wafer within a preset time period in the future according to a numerical relationship between an actual pH value and a preset pH range, whether there is an indication of a contaminated wafer risk level or an oxidized wafer risk, a theoretical pH value, an actual cleaning amount of a silicon wafer, and a theoretical cleaning amount of a silicon wafer;

[0035] The control module is used to add a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continue to clean the silicon wafer; or make the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

[0036] In a third aspect, an embodiment of the present application further provides an electronic device, comprising: a processor, a storage medium and a bus, wherein the storage medium stores machine-readable instructions executable by the processor, and when the electronic device is running, the processor communicates with the storage medium through the bus, and the processor executes the machine-readable instructions to perform the steps of the silicon wafer cleaning method as described in any one of the first aspects.

[0037] In a fourth aspect, an embodiment of the present application further provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the silicon wafer cleaning method as described in any one of the first aspects are executed.

[0038] The embodiments of the present application provide a silicon wafer cleaning method, device, electronic device and storage medium, the method comprising: obtaining a current contamination wafer risk level or oxidation wafer risk indicator corresponding to a target reagent tank, an actual silicon wafer cleaning amount, a theoretical silicon wafer cleaning amount, and a current actual pH value and a theoretical pH value of a reagent solution in the target reagent tank; determining a target pH value corresponding to the target reagent tank or a silicon wafer cleaning time within a preset time period in the future according to a numerical relationship between the actual pH value and a preset pH range, whether there is a contamination wafer risk level or oxidation wafer risk indicator, a theoretical pH value, an actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount; adding a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continuing to clean the silicon wafer; or causing the target reagent tank to clean the silicon wafer according to the silicon wafer cleaning time. The present application adds reagent solution to the target reagent tank or adjusts the cleaning time of the silicon wafer according to the current risk level of contaminated wafers, the actual cleaning amount of the silicon wafers, the theoretical cleaning amount of the silicon wafers and the actual pH value, thereby avoiding the problem of oxide wafers when the silicon wafer surface is too clean and contaminated wafers when it is too dirty, thereby reducing the production cost of silicon wafers and improving production efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0039] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0040] Figure 1 A flow chart of a silicon wafer cleaning method provided in an embodiment of the present application is shown;

[0041] Figure 2 A flow chart showing another silicon wafer cleaning method provided in an embodiment of the present application is shown;

[0042] Figure 3 A schematic structural diagram of a silicon wafer cleaning device provided in an embodiment of the present application is shown;

[0043] Figure 4 A schematic structural diagram of an electronic device provided in an embodiment of the present application is shown. DETAILED DESCRIPTION

[0044] To make the purpose, technical scheme and advantages of the embodiments of the present application clearer, the technical scheme in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. It should be understood that the drawings in the present application only serve the purpose of explanation and description and are not used to limit the scope of protection of the present application. In addition, it should be understood that the schematic drawings are not drawn in real proportion. The flowchart used in this application shows the operations implemented according to some embodiments of the present application. It should be understood that the operations of the flowchart can be implemented out of sequence, and the steps without logical context can be reversed in order or implemented simultaneously. In addition, those skilled in the art can add one or more other operations to the flowchart under the guidance of the content of the present application, or remove one or more operations from the flowchart.

[0045] In addition, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various configurations. Therefore, the following detailed description of the embodiments of the present application provided in the drawings is not intended to limit the scope of the application claimed for protection, but merely represents the selected embodiments of the present application. Based on the embodiments of the present application, all other embodiments obtained by those skilled in the art without making creative work belong to the scope of protection of the present application.

[0046] In order to enable those skilled in the art to use the content of this application, the following implementation is provided in conjunction with a specific application scenario, "the field of cleaning silicon wafers". For those skilled in the art, the general principles defined herein can be applied to other embodiments and application scenarios without departing from the spirit and scope of this application. Although this application is mainly described around the "field of cleaning silicon wafers", it should be understood that this is only an exemplary embodiment.

[0047] It should be noted that the term "comprising" will be used in the embodiments of the present application to indicate the existence of the features declared thereafter, but does not exclude the addition of other features.

[0048] A method for cleaning a silicon wafer provided in an embodiment of the present application is described in detail below.

[0049] Reference Figure 1 As shown, it is a schematic diagram of a process flow of a silicon wafer cleaning method provided in an embodiment of the present application. The exemplary steps of the embodiment of the present application are described below:

[0050] S101, obtaining the current risk level of contaminated wafers or the existence of an identification of the risk of oxidized wafers, the actual cleaning volume of silicon wafers, the theoretical cleaning volume of silicon wafers, and the actual value and theoretical value of the current pH value of the reagent solution in the target reagent tank.

[0051] In the implementation mode of the present application, the current risk level of dirty wafers refers to the risk level of the silicon wafers currently cleaned by the target reagent tank as dirty wafers (such as no risk, low risk, medium-low risk, medium-high risk and high risk). The actual cleaning amount of silicon wafers refers to the actual number of silicon wafers cleaned by the target reagent tank in the current cycle up to the current moment. The theoretical cleaning amount of silicon wafers refers to the theoretical number of silicon wafers cleaned by the target reagent tank in the current dressing cycle up to the current moment. The actual value of pH is the pH value. According to the preset time interval corresponding to the current cleaning time period of the target reagent tank in the current dressing cycle, the current risk level of dirty wafers or the existence of an identification of the risk of oxide wafers corresponding to the target reagent tank, the actual cleaning amount of silicon wafers, the theoretical cleaning amount of silicon wafers, and the actual pH value and theoretical pH value of the reagent solution in the target reagent tank are obtained. Specifically, if the existence of the oxidation wafer risk is marked as the corresponding mark of the oxidation risk, then the current existence of the oxidation wafer risk mark, the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer, and the current actual pH value and theoretical pH value of the reagent solution in the target reagent tank corresponding to the target reagent tank are obtained; if the existence of the oxidation wafer risk is marked as the corresponding mark of the oxidation risk is not present, then the current oxidation wafer risk, the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer, and the current actual pH value and theoretical pH value of the reagent solution in the target reagent tank are obtained.

[0052] Taking the dressing cycle of 24 hours (i.e. the target drug tank changes the drug solution once every 24 hours) as an example, the data is obtained once every 3 hours in the first 6 hours; once every 2 hours from 7 to 18 hours; and once every 1 hour from 19 to 24 hours;

[0053] Here, a medicine dispensing mechanism is installed on the side of the target medicine tank, and the medicine dispensing mechanism automatically obtains the medicine solution from the target medicine tank according to the preset pH detection time interval; the obtained medicine solution is dropped on the pH test finger, and the pH test paper with the medicine solution is compared with the detection color card by AI intelligent recognition to obtain the actual pH value of the target medicine tank in the future corresponding to the pH acquisition time interval; or the medicine dispensing mechanism automatically obtains the medicine solution from the target medicine tank according to the preset pH detection time interval; the obtained medicine solution is analyzed to obtain the actual pH value of the target medicine tank in the future corresponding to the pH acquisition time interval.

[0054] For example, if the preset pH acquisition time interval is 1 hour, the actual pH value obtained is the actual pH value within the next 1 hour.

[0055] Here, the theoretical pH of the current pH value of the reagent solution in the target reagent tank is calculated by the following formula: theory :

[0056] PHtheory =A-[x*(AB) / 24];

[0057] Among them, A is the upper limit value of the preset pH range of the medicine solution in the target medicine tank, x is the current cleaning time of the target medicine tank in the current medicine change cycle, and B is the lower limit value of the preset pH range.

[0058] Furthermore, the following steps are used to obtain the current risk level of contaminated tablets and whether there is an indicator of oxidized tablet risk corresponding to the target reagent tank:

[0059] Step 1: Obtain the current silicon wafer cleaning quality corresponding to the target reagent tank and the number of silicon wafers whose silicon wafer cleaning quality is abnormally high and whose surface color brightness is greater than a preset standard color brightness.

[0060] In an embodiment of the present application, obtaining the current silicon wafer cleaning quality corresponding to the target reagent tank includes: obtaining the surface silicon powder amount of the silicon wafer in the sorting process according to a preset quality detection time interval, if the surface silicon powder amount is greater than the preset maximum silicon powder amount, then the silicon wafer cleaning quality of the target reagent tank in the future time period corresponding to the quality detection time interval is low quality (i.e., the silicon wafer currently cleaned by the target reagent tank is dirty); if the surface silicon powder amount is less than or equal to the preset maximum silicon powder amount and greater than the preset minimum silicon powder amount, then the silicon wafer cleaning quality of the target reagent tank in the future time period corresponding to the quality detection time interval is high quality (i.e., the silicon wafer currently cleaned by the target reagent tank is clean); if the surface silicon powder amount is less than the preset minimum silicon powder amount, then the silicon wafer cleaning quality of the target reagent tank in the future time period corresponding to the quality detection time interval is abnormally high quality (i.e., the silicon wafer currently cleaned by the target reagent tank is abnormally clean, and oxidation wafers may appear when it is abnormally clean).

[0061] Step 2: If the number of silicon wafers is greater than the preset number of silicon wafers (which can be set to 800), the presence or absence of an oxidation risk mark is determined as a mark corresponding to the oxidation risk.

[0062] Step three, if the number of silicon wafers is less than the preset number of silicon wafers, the mark of whether there is an oxidation risk is determined as the mark corresponding to no oxidation risk; and based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual silicon wafer cleaning amount and the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality, determine the current contaminated wafer risk level corresponding to the target reagent tank.

[0063] Specifically, if the actual pH value is less than the theoretical pH value, the actual silicon wafer cleaning amount is less than the theoretical silicon wafer cleaning amount and the silicon wafer cleaning quality is high, the reagent solution in the target reagent tank is stirred; if the pH value of the reagent solution after stirring is less than the theoretical pH value, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk.

[0064] Specifically, if the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0065] In an embodiment of the present application, if the ratio of the actual pH value to the theoretical pH value is greater than or less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, it means that the actual pH value and the theoretical cleaning amount of the silicon wafer do not increase or decrease in proportion; if the ratio of the actual pH value to the theoretical pH value is equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, it means that the actual pH value and the theoretical cleaning amount of the silicon wafer increase or decrease in proportion.

[0066] Specifically, if the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0067] Specifically, if the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0068] Specifically, if the actual pH value is greater than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-low risk; if the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0069] Specifically, if the actual pH value is greater than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, then the current contaminated wafer risk level corresponding to the target reagent tank is low risk.

[0070] Specifically, if the actual pH value is greater than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is medium-low risk; if the ratio of the actual pH value to the theoretical pH value is equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is low risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0071] Specifically, if the actual pH value is greater than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is medium-low risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is high risk; if the ratio of the actual pH value to the theoretical pH value is equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk.

[0072] Furthermore, the theoretical cleaning amount of the silicon wafer is calculated by the following formula:

[0073] C theory =x*C / T;

[0074] Among them, C theory is the theoretical cleaning amount of the silicon wafer, x is the current cleaning time of the target reagent tank in the current reagent change cycle, and C is the preset total cleaning amount of the silicon wafer in a reagent change cycle T.

[0075] S102. Determine the target pH value corresponding to the target reagent tank or the cleaning time of the silicon wafer within a preset time period in the future based on the numerical relationship between the actual pH value and the preset pH range, whether there is an indicator of the risk level of wafer contamination or the risk of wafer oxidation, the theoretical pH value, the actual cleaning volume of the silicon wafer, and the theoretical cleaning volume of the silicon wafer.

[0076] Specifically, if the actual pH value is within the preset pH range corresponding to the target reagent tank, and the presence of the risk of wafer oxidation is indicated by the corresponding mark, then the silicon wafer cleaning time within the future preset time period is calculated based on the actual pH value and the theoretical pH value.

[0077] In the implementation mode of the present application, the actual pH value and the theoretical pH value are substituted into the following formula to obtain the cleaning time of the silicon wafer within the future preset time:

[0078] t=Z-[(L-PH theory ) / Z];

[0079] Among them, t is the cleaning time of the silicon wafer within the preset time in the future, Z is the current cleaning time of a single silicon wafer in the target reagent tank, L is the actual value of pH, PH theory It is the theoretical value of pH.

[0080] Here, when oxide sheets are present, the above formula can reduce the silicon wafer cleaning time and prevent the appearance of oxide sheets.

[0081] Specifically, if the actual pH value is less than the lower limit of the preset pH range, the target pH value corresponding to the target reagent tank is calculated based on the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range.

[0082] In the implementation mode of the present application, the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range are substituted into the following formula to obtain the target pH value corresponding to the target reagent tank;

[0083] PH x =A-(C x / C total )*(AB);

[0084] Among them, PH x is the target pH value corresponding to the target reagent tank, A is the upper limit of the preset pH range, C x is the actual cleaning amount of the silicon wafer, C total is the theoretical cleaning volume of the silicon wafer, and B is the lower limit of the preset pH range.

[0085] Specifically, if the actual pH value is greater than the upper limit value in the preset pH range, the silicon wafer cleaning time within a future preset time period is calculated based on the actual pH value and the upper limit value in the preset pH range.

[0086] In the implementation mode of the present application, the actual pH value and the upper limit value in the preset pH range are substituted into the following formula to obtain the silicon wafer cleaning time within the future preset time period;

[0087] t = Z - [(LA) / Z];

[0088] Among them, t is the cleaning time of the silicon wafer within the future preset time, Z is the current cleaning time of a single silicon wafer in the target reagent tank, L is the actual pH value, and A is the upper limit value in the preset pH range.

[0089] Here, when the actual pH value is greater than the upper limit value in the preset pH range, the above formula can reduce the silicon wafer cleaning time and prevent the occurrence of oxidation wafers.

[0090] S103, adding a reagent solution to the target reagent tank, and continuing to clean the silicon wafer until the pH value of the reagent solution in the target reagent tank reaches the target pH value; or making the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

[0091] The embodiment of the present application provides a method for cleaning silicon wafers, the method comprising: obtaining the current risk level of dirty wafers, the actual cleaning amount of silicon wafers, the theoretical cleaning amount of silicon wafers, and the actual pH value of the reagent solution in the target reagent tank corresponding to the target reagent tank; determining the target pH value corresponding to the target reagent tank or the cleaning time of the silicon wafer within a preset time in the future according to the numerical relationship between the actual pH value and the preset pH range, the risk level of dirty wafers, the actual cleaning amount of silicon wafers, and the theoretical cleaning amount of silicon wafers; adding reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continuing to clean the silicon wafer; or making the target reagent tank clean the silicon wafer according to the cleaning time of the silicon wafer. The present application adds reagent solution to the target reagent tank or adjusts the cleaning time of the silicon wafer by using the current risk level of dirty wafers, the actual cleaning amount of silicon wafers, the theoretical cleaning amount of silicon wafers, and the actual pH value, so as to avoid the problem of oxide wafers when the silicon wafer surface is too clean and dirty wafers when it is too dirty, thereby reducing the production cost of silicon wafers and improving production efficiency.

[0092] Reference Figure 2 As shown, it is a schematic diagram of a process flow of a silicon wafer cleaning method provided in an embodiment of the present application. The exemplary steps of the embodiment of the present application are described below:

[0093] S201, obtaining the current silicon wafer cleaning quality corresponding to the target reagent tank and the number of silicon wafers whose cleaning quality is abnormally high and whose surface color brightness is greater than a preset standard color brightness.

[0094] S202. If the number of silicon wafers is greater than the preset number of silicon wafers, determining whether there is an oxidation risk flag as a flag corresponding to the oxidation risk.

[0095] S203. If the number of silicon wafers is less than the preset number of silicon wafers, the mark indicating whether there is a risk of oxidation of the wafers is determined as the mark corresponding to the risk of no oxidation; and based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual cleaning amount of the silicon wafers and the theoretical cleaning amount of the silicon wafers, and the cleaning quality of the silicon wafers, the current risk level of contaminated wafers corresponding to the target reagent tank is determined.

[0096] An embodiment of the present application provides another silicon wafer cleaning method, which can determine the current contaminated wafer risk level corresponding to the target reagent tank.

[0097] Based on the same inventive concept, an embodiment of the present application also provides a silicon wafer cleaning device corresponding to the silicon wafer cleaning method. Since the principle of solving the problem by the device in the embodiment of the present application is similar to the above-mentioned silicon wafer cleaning method in the embodiment of the present application, the implementation of the device can refer to the implementation of the method, and the repeated parts will not be repeated.

[0098] Reference Figure 3FIG. 1 is a schematic diagram of a silicon wafer cleaning device provided in an embodiment of the present application, wherein the silicon wafer cleaning device comprises:

[0099] The acquisition module 301 is used to obtain the current contaminated wafer risk level or whether there is an oxidation wafer risk mark corresponding to the target reagent tank, the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer, and the actual value of the current pH value and the theoretical value of the pH value of the reagent solution in the target reagent tank;

[0100] The determination module 302 is used to determine the target pH value corresponding to the target reagent tank or the cleaning time of the silicon wafer within a preset time period in the future according to the numerical relationship between the actual pH value and the preset pH range, whether there is an indicator of the risk level of the contaminated wafer or the risk of the oxidized wafer, the theoretical pH value, the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer;

[0101] The control module 303 is used to add a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continue to clean the silicon wafer; or make the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

[0102] In one possible implementation, the acquisition module 301 is specifically used to obtain the current silicon wafer cleaning quality corresponding to the target reagent slot and the number of silicon wafers whose silicon wafer cleaning quality continues to be abnormally high and whose surface color brightness is greater than a preset standard color brightness; if the number of silicon wafers is greater than the preset number of silicon wafers, the presence of an oxidation risk mark is determined as a mark corresponding to the oxidation risk; if the number of silicon wafers is less than the preset number of silicon wafers, the presence of an oxidation risk mark is determined as a mark corresponding to no oxidation risk; and based on the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer, and the silicon wafer cleaning quality, the current contaminated wafer risk level corresponding to the target reagent slot is determined.

[0103] In one possible implementation, the acquisition module 301 is specifically used to stir the reagent solution in the target reagent tank if the actual pH value is less than the theoretical pH value, the actual silicon wafer cleaning amount is less than the theoretical silicon wafer cleaning amount, and the silicon wafer cleaning quality is high; if the pH value of the reagent solution after stirring is less than the theoretical pH value, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk.

[0104] In one possible implementation, the acquisition module 301 is specifically used to determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer if the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low quality; if the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; if the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

[0105] In one possible implementation, the acquisition module 301 is specifically used to determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer if the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high; if the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is high contaminated wafer risk; if the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is no contaminated wafer risk.

[0106] In a possible implementation, the determination module 302 is specifically used to calculate the cleaning time of the silicon wafer within a preset time period in the future according to the actual pH value and the theoretical pH value if the actual pH value is within the preset pH range corresponding to the target reagent tank, and the presence of the risk of oxidation of the wafer is indicated as the presence of the risk of oxidation of the wafer corresponding to the mark; if the actual pH value is within the preset pH range corresponding to the target reagent tank, and the risk level of the contaminated wafer is the target risk level of the contaminated wafer, the target pH value corresponding to the target reagent tank is calculated according to the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range; if the actual pH value is less than the lower limit value in the preset pH range, the target pH value corresponding to the target reagent tank is calculated according to the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range; if the actual pH value is greater than the upper limit value in the preset pH range, the cleaning time of the silicon wafer within a preset time period in the future is calculated according to the actual pH value and the upper limit value in the preset pH range.

[0107] In a possible implementation, the determination module 302 is specifically used to substitute the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range into the following formula to obtain a target pH value corresponding to the target reagent tank;

[0108] PH x =A-(C x / C total )*(AB);

[0109] Among them, PH x is the target pH value corresponding to the target reagent tank, A is the upper limit of the preset pH range, C x is the actual cleaning amount of the silicon wafer, C total is the theoretical cleaning volume of the silicon wafer, and B is the lower limit of the preset pH range.

[0110] The embodiment of the present application provides a silicon wafer cleaning device, which includes: an acquisition module 301, which is used to obtain whether there is an identification of the current risk level of contaminated wafers or the risk of oxidized wafers corresponding to the target chemical tank, the actual cleaning amount of the silicon wafers, the theoretical cleaning amount of the silicon wafers, and the actual pH value and theoretical pH value of the chemical solution in the target chemical tank; a determination module 302, which is used to determine the target pH value corresponding to the target chemical tank or the cleaning time of the silicon wafers within a preset time in the future according to the numerical relationship between the actual pH value and the preset pH range, whether there is an identification of the risk level of contaminated wafers or the risk of oxidized wafers, the theoretical pH value, the actual cleaning amount of the silicon wafers, and the theoretical cleaning amount of the silicon wafers; a control module 303, which is used to add chemical solution to the target chemical tank until the pH value of the chemical solution in the target chemical tank reaches the target pH value and then continue to clean the silicon wafers; or to make the target chemical tank clean the silicon wafers according to the cleaning time of the silicon wafers. The present application adds reagent solution to the target reagent tank or adjusts the cleaning time of the silicon wafer according to the current risk level of contaminated wafers, the actual cleaning amount of the silicon wafers, the theoretical cleaning amount of the silicon wafers and the actual pH value, thereby avoiding the problem of oxide wafers when the silicon wafer surface is too clean and contaminated wafers when it is too dirty, thereby reducing the production cost of silicon wafers and improving production efficiency.

[0111] like Figure 4 As shown, an electronic device 400 provided in an embodiment of the present application includes: a processor 401, a memory 402 and a bus, the memory 402 stores machine-readable instructions executable by the processor 401, when the electronic device is running, the processor 401 and the memory 402 communicate through the bus, and the processor 401 executes the machine-readable instructions to perform the steps of the above-mentioned silicon wafer cleaning method.

[0112] Specifically, the memory 402 and the processor 401 can be general-purpose memories and processors, which are not specifically limited here. When the processor 401 runs the computer program stored in the memory 402, the silicon wafer cleaning method can be executed.

[0113] Corresponding to the above-mentioned silicon wafer cleaning method, an embodiment of the present application also provides a computer-readable storage medium, on which a computer program is stored. When the computer program is executed by a processor, the steps of the above-mentioned silicon wafer cleaning method are executed.

[0114] Those skilled in the art can clearly understand that, for the convenience and simplicity of description, the specific working process of the system and device described above can refer to the corresponding process in the method embodiment, and will not be repeated in this application. In the several embodiments provided in this application, it should be understood that the disclosed system, device and method can be implemented in other ways. The device embodiments described above are merely schematic. For example, the division of the modules is only a logical function division. There may be other division methods in actual implementation. For example, multiple modules or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some communication interfaces, indirect coupling or communication connection of devices or modules, which can be electrical, mechanical or other forms.

[0115] The modules described as separate components may or may not be physically separated, and the components shown as modules may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0116] In addition, each functional unit in each embodiment of the present application may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0117] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a non-volatile computer-readable storage medium that is executable by a processor. Based on this understanding, the technical solution of the present application, or the part that contributes to the prior art or the part of the technical solution, can be embodied in the form of a software product, which is stored in a storage medium and includes several instructions for a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the information processing method described in each embodiment of the present application. The aforementioned storage medium includes: various media that can store program codes, such as USB flash drives, mobile hard drives, ROM, RAM, magnetic disks, or optical disks.

[0118] The above are only specific implementations of the present application, but the protection scope of the present application is not limited thereto. Any technician familiar with the technical field can easily think of changes or substitutions within the technical scope disclosed in the present application, which should be included in the protection scope of the present application. Therefore, the protection scope of the present application should be based on the protection scope of the claims.

Claims

1. A method for cleaning a silicon wafer, characterized in that: The method comprises: Obtain the current risk level of contaminated wafers or whether there is an identification of the risk of oxidized wafers, the actual cleaning amount of silicon wafers, the theoretical cleaning amount of silicon wafers, and the actual value and theoretical value of the current pH value of the reagent solution in the target reagent tank; Determine the target pH value corresponding to the target reagent tank or the cleaning time of the silicon wafer within a preset time period in the future according to the numerical relationship between the actual pH value and the preset pH range, the risk level of the contaminated wafer or the presence of an identification of the risk of the oxidized wafer, the theoretical pH value, the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer; Add a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continue to clean the silicon wafer; or make the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

2. The method for cleaning a silicon wafer according to claim 1, wherein: Determine whether there is a mark for the current contaminated tablet risk level and oxidized tablet risk corresponding to the target reagent tank by the following steps: Obtaining the current silicon wafer cleaning quality corresponding to the target reagent tank and the number of silicon wafers whose silicon wafer cleaning quality is abnormally high and whose surface color brightness is greater than a preset standard color brightness; If the number of silicon wafers is greater than the preset number of silicon wafers, determining whether there is an oxidation risk indicator as an oxidation risk corresponding indicator; If the number of silicon wafers is less than the preset number of silicon wafers, determining whether the oxidation risk exists as a corresponding mark of no oxidation risk; And according to the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is determined.

3. The method for cleaning a silicon wafer according to claim 2, characterized in that: Determining the current contaminated wafer risk level corresponding to the target reagent tank according to the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer includes: If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer and the cleaning quality of the silicon wafer is high, the reagent solution in the target reagent tank is stirred; if the pH value of the reagent solution after stirring is less than the theoretical pH value, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk.

4. The method for cleaning a silicon wafer according to claim 2, characterized in that: Determining the current contaminated wafer risk level corresponding to the target reagent tank according to the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer includes: If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is less than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is low, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; If the ratio of the actual pH value to the theoretical pH value is greater than or equal to the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer, the current contaminated wafer risk level corresponding to the target reagent tank is medium-high risk; If the ratio of the actual pH value to the theoretical pH value is less than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is no risk.

5. The method for cleaning a silicon wafer according to claim 2, characterized in that: Determining the current contaminated wafer risk level corresponding to the target reagent tank according to the numerical relationship between the actual pH value and the theoretical pH value, the numerical relationship between the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer includes: If the actual pH value is less than the theoretical pH value, the actual cleaning amount of the silicon wafer is greater than the theoretical cleaning amount of the silicon wafer, and the cleaning quality of the silicon wafer is high, then determine whether the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual cleaning amount of the silicon wafer to the theoretical cleaning amount of the silicon wafer; If the ratio of the actual pH value to the theoretical pH value is greater than the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is a high contaminated wafer risk; If the ratio of the actual pH value to the theoretical pH value is less than or equal to the ratio of the actual silicon wafer cleaning amount to the theoretical silicon wafer cleaning amount, the current contaminated wafer risk level corresponding to the target reagent tank is no contaminated wafer risk.

6. The method for cleaning a silicon wafer according to any one of claims 1 to 5, characterized in that: The step of determining the target pH value corresponding to the target reagent tank or the cleaning time of the silicon wafer within a preset time period in the future according to the numerical relationship between the actual pH value and the preset pH range, the risk level of the contaminated wafer or the presence of an identification of the risk of the oxidized wafer, the theoretical pH value, the actual cleaning amount of the silicon wafer and the theoretical cleaning amount of the silicon wafer comprises: If the actual pH value is within the preset pH range corresponding to the target reagent tank, and the flag indicating whether there is a risk of oxidation of the wafer is a flag indicating whether there is a risk of oxidation of the wafer, then the cleaning time of the silicon wafer within a preset time in the future is calculated according to the actual pH value and the theoretical pH value; If the actual pH value is within the preset pH range corresponding to the target reagent tank, and the contaminated wafer risk level is the target contaminated wafer risk level, then the target pH value corresponding to the target reagent tank is calculated according to the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range; If the actual pH value is less than the lower limit of the preset pH range, the target pH value corresponding to the target reagent tank is calculated according to the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range; If the actual pH value is greater than the upper limit of the preset pH range, the cleaning time of the silicon wafer within a preset time period in the future is calculated based on the actual pH value and the upper limit of the preset pH range.

7. The method for cleaning a silicon wafer according to claim 6, characterized in that: The step of calculating the target pH value corresponding to the target reagent tank according to the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range includes: Substituting the actual cleaning amount of the silicon wafer, the theoretical cleaning amount of the silicon wafer and the preset pH range into the following formula, the target pH value corresponding to the target reagent tank is obtained; PH x =A-(C x / C total )*(A-B); Among them, PH x is the target pH value corresponding to the target reagent tank, A is the upper limit value in the preset pH range, C x is the actual cleaning amount of the silicon wafer, C total is the theoretical cleaning amount of the silicon wafer, and B is the lower limit value in the preset pH range.

8. A silicon wafer cleaning device, characterized in that: The device includes: An acquisition module is used to obtain the current risk level of contaminated wafers or the presence of an oxidation wafer risk indicator corresponding to the target reagent tank, the actual cleaning amount of the silicon wafers, the theoretical cleaning amount of the silicon wafers, and the actual value of the current pH value and the theoretical value of the pH value of the reagent solution in the target reagent tank; A determination module, configured to determine a target pH value corresponding to the target reagent tank or a cleaning time of the silicon wafer within a preset time period in the future according to a numerical relationship between the actual pH value and a preset pH range, whether there is an indication of the risk level of the contaminated wafer or the risk of the oxidized wafer, the theoretical pH value, the actual cleaning amount of the silicon wafer, and the theoretical cleaning amount of the silicon wafer; The control module is used to add a reagent solution to the target reagent tank until the pH value of the reagent solution in the target reagent tank reaches the target pH value and then continue to clean the silicon wafer; or make the target reagent tank clean the silicon wafer according to the silicon wafer cleaning time.

9. An electronic device, characterized in that: include: A processor, a storage medium and a bus, wherein the storage medium stores machine-readable instructions executable by the processor, and when the electronic device is running, the processor communicates with the storage medium via the bus, and the processor executes the machine-readable instructions to perform the steps of the silicon wafer cleaning method as described in any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the silicon wafer cleaning method according to any one of claims 1 to 7 are executed.

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