Semiconductor equipment vacuum gate valve sealing structure and manufacturing method thereof

Abstract

The invention relates to the field of semiconductors, and discloses a semiconductor equipment vacuum gate valve sealing structure, which is provided with a metal body and a connecting part formed on the metal body, and further comprises a metal framework sealing ring, the metal framework sealing ring consists of a metal framework and a first sealing ring; a mounting part and a bonding part are formed on the metal framework; the metal framework sealing ring is fixed to the connecting part through the mounting part, the bonding part is wrapped by the first sealing ring, and at least part of the top of the first sealing ring protrudes out of the connecting part. The connecting part is additionally designed in the groove of the metal body, the metal framework and the connecting part are fixedly connected, the sealing ring is designed to be of a structure wrapping part of the metal framework, and the metal framework serving as a middleware is stably connected with the metal body on one hand and is stably connected with the sealing ring through a physical structure on the other hand; through the structural design, the technical problems that in the prior art, a sealing ring is prone to falling off, the service life is short, and the bonding strength is poor are solved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a vacuum gate valve sealing structure for semiconductor equipment and a manufacturing method thereof. Background Art

[0002] During the semiconductor manufacturing process, many manufacturing processes require a clean and high vacuum environment, such as photolithography, thin film deposition, ion implantation, ion plating, or plasma etching. High vacuum manufacturing processes need to ensure the vacuum level, so the production environment needs to be sealed. Among the above processes that require a high vacuum environment, some processes use corrosive gases or active gases, such as ion implantation, ion plating, or plasma etching. These processes that use corrosive gases or active gases have more stringent requirements for the sealing of the production environment.

[0003] In the semiconductor production process, the workpiece entrance and exit require a gate valve that can be opened and closed, and the gate valve needs to have a sealing function. In the existing technology, the design of the gate valve is to design a groove (dovetail groove, etc.) on a metal body such as an aluminum plate or a stainless steel plate, and then design a fluororubber or perfluoroether sealing ring to be installed on the metal body to form a combined gate valve. Since the sealing ring is very easy to fall off from the metal body during use, it is improved to an integrated gate valve. The integrated gate valve design is to bond the metal body and the fluororubber or perfluoroether sealing ring together to form an integrated gate valve.

[0004] As mentioned above, due to the strict requirements of semiconductor production for vacuum environment, most of the sealing rings used in semiconductor production are made of perfluoroether material. However, due to the inherent characteristics of perfluoroether material, there is no adhesive specifically suitable for bonding perfluoroether material and metal material in the prior art. The bonding strength of perfluoroether glue used in the prior art with the metal body is poor, and the gate valve will be frequently opened and closed during use, which can easily cause the perfluoroether sealing ring to fall off from the metal body, resulting in a short service life of the vacuum gate valve and high cost.

[0005] Moreover, in the actual production of semiconductors, the vacuum gate valve of semiconductor equipment is a consumable. Due to the high production cost of semiconductor devices, the vacuum gate valve is not replaced until there is a risk of failure. Instead, it is actively replaced after the vacuum gate valve has been used for a period of time, even if it has not failed. In this case, the service life of the vacuum gate valve will have a significant impact on the cost of semiconductor production. In addition, vacuum gate valves are currently mainly produced by foreign manufacturers, with high procurement costs, and domestic alternatives are urgently needed.

[0006] In order to prevent the perfluoroether sealing ring from falling off the metal body and extend the service life of the vacuum gate valve, the mainstream solutions adopted by the existing technology include: 1. The combined gate valve is formed by structural design, refer to Figure 1As shown. A groove is designed on the metal body, and then a corresponding sealing ring is designed, such as the sealing ring is fixed by the groove, and then the two monomers are combined to form a combined gate valve. However, this solution is not ideal because it is a split combination. No matter what material the sealing ring is made of, the product is easy to debond during production and molding, the finished product yield is low, and it is very easy to fall off during use, and the life is short.

[0007] 2. Through structural design, an integrated gate valve is formed, and the sealing ring is bonded to the metal body with glue. Due to the diversity of semiconductor wafer types, sizes, manufacturing methods, etc., different equipment is used, and the corresponding gate valves are also different. Different gate valves have different grooves for bonding the sealing ring. The three most common groove types are: double-sided groove, single-sided groove, and edgeless groove. Figures 2 to 4 However, this solution is not ideal because there is no suitable glue for perfluoroether material, the bonding strength is poor, it is easy to fall off during use, and the service life is short. Therefore, there is an urgent need for a semiconductor device vacuum gate valve sealing structure to improve the above problems. Summary of the invention

[0008] A series of simplified concepts are introduced in the Summary of the Invention, which are all simplifications of the prior art in the field, and will be further described in detail in the Detailed Description of the Invention. The Summary of the Invention of the present invention does not mean to attempt to define the key features and essential technical features of the claimed technical solution, nor does it mean to attempt to determine the scope of protection of the claimed technical solution.

[0009] The technical problem to be solved by the present invention is to provide a sealing structure in which a metal body and a sealing ring are firmly connected and not easily separated, and the service life of a vacuum gate valve of a semiconductor device can be prolonged.

[0010] In order to solve the above technical problems, the present invention provides a semiconductor device vacuum gate valve sealing structure, which has a metal body and a connecting portion formed on the metal body, and also includes: a metal skeleton sealing ring; The metal frame sealing ring is composed of a metal frame and a first sealing ring; The metal frame is formed with a mounting portion and a bonding portion; The metal skeleton sealing ring is fixed to the connecting portion through the mounting portion, the bonding portion is covered by the first sealing ring, and the first sealing ring covers a top portion that at least partially protrudes from the connecting portion.

[0011] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and the first sealing ring is integrally formed, pressed and coated on the bonding portion.

[0012] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, a through hole is formed on the bonding portion, and the first sealing ring covers, passes through and fills the through hole. The shape of the through hole is not limited, and can be a circular hole, a polygonal hole or a variable diameter hole.

[0013] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and the edge of the through hole is formed with a chamfer to prevent the formed sealing ring from being cut.

[0014] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and the thickness of the first sealing ring coated on the bonding portion is greater than 1 mm.

[0015] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, and the mounting portion and the connecting portion are fixed by snaps, threads, interference fit or welding.

[0016] Preferably, the semiconductor device vacuum gate valve sealing structure is further improved, further comprising: The second sealing ring covers the connection between the connecting part and the metal mounting part.

[0017] The present invention provides a method for manufacturing a semiconductor device vacuum gate valve sealing structure, which is used to manufacture any of the semiconductor device vacuum gate valve sealing structures described above, comprising the following steps: S1, providing a metal body 1 having a connecting portion 2 and a metal skeleton 3; S2, providing an upper mold, wherein the upper mold is formed into a molding cavity mold of the shape and size of the sealing ring; Providing a middle mold, wherein the middle mold is formed into a molding cavity mold for accommodating the metal skeleton 3; Providing a lower die, the lower die is used to support the middle die; S3, placing the middle mold on the lower mold, and adding a specified adhesive material on the bonding portion 6; S4, cover the upper mold and enter the vulcanization molding equipment for vulcanization molding; S5, removing the upper die, the middle die and the lower die to obtain a metal skeleton sealing ring; S6, assembling and installing the connecting part 2 and the mounting part 5 to form an integral gate valve.

[0018] The present invention designs an additional connecting portion in the groove of the metal body, and performs a fixed connection between the metal skeleton and the connecting portion. The sealing ring is designed to have a structure that covers a portion of the metal skeleton. The metal skeleton serves as an intermediate piece, which forms a firm connection with the metal body on the one hand, and forms a firm connection with the sealing ring through a physical structure on the other hand. Through the above structural design, the present invention can at least achieve the following technical effects.

[0019] 1. The present invention designs the vacuum gate valve as a split structure, which is divided into a metal body and a metal skeleton sealing ring, which is convenient for production while providing a stable connection.

[0020] 2. The present invention designs a second sealing ring to ensure the airtightness of the two separate structures of the two metal bodies and the metal skeleton sealing ring after they are assembled.

[0021] 3. The bottom of the bonding part is designed to be a plane so that the rubber and the bonding part have a bottom fixed support when they are integrally formed; the width of the plane is at least the same as the width of the rubber bottom.

[0022] 4. The first sealing ring of the present invention passes through the through hole of the bonding part of the metal skeleton, thereby forming a fixed connection between the skeleton of the metal material and the sealing ring of the non-metallic material, and forming a stable connection through the physical structure to solve the technical problems of the prior art that the sealing ring is easy to fall off, has a short service life, and has poor bonding strength.

[0023] 5. The sealing ring and the metal frame are integrally molded and pressed, and the sealing ring completely covers the bonding part of the metal frame. The metal frame can effectively improve the strength of the sealing ring.

[0024] 6. The thickness of the first sealing ring wrapped around the bonding part is greater than 1 mm, ensuring the compression of the rubber sealing ring to ensure sealing. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] The drawings of the present invention are intended to illustrate the general characteristics of the methods, structures and / or materials used in specific exemplary embodiments of the present invention, and to supplement the description in the specification. However, the drawings of the present invention are schematic diagrams not drawn to scale, and thus may not accurately reflect the precise structure or performance characteristics of any given embodiment, and the drawings of the present invention should not be interpreted as limiting or restricting the range of values ​​or properties covered by the exemplary embodiments of the present invention. The present invention is further described in detail below in conjunction with the drawings and specific embodiments.

[0026] Figure 1 The utility model is a cross-sectional schematic diagram of the existing combined gate valve sealing structure.

[0027] Figure 2 The utility model is a cross-sectional schematic diagram of an existing double-sided groove arrangement sealing ring.

[0028] Figure 3 The utility model is a cross-sectional schematic diagram of a sealing ring arranged in a single-side groove.

[0029] Figure 4 The utility model is a cross-sectional schematic diagram of an existing sealing ring arranged in a borderless groove.

[0030] Figure 5 The first embodiment of the present invention is a cross-sectional view Figure 1 .

[0031] Figure 6 The first embodiment of the present invention is a cross-sectional view Figure 2 .

[0032] Figure 7 2 is a cross-sectional view of a second embodiment of the present invention.

[0033] Figure 8 It is a schematic diagram of a preferred embodiment of the through hole of the present invention.

[0034] Fig. 9 1 is a cross-sectional view of a third embodiment of the present invention.

[0035] Description of reference numerals: Metal body 1; Connecting part 2; Metal skeleton 3; The first sealing ring 4; Installation part 5; Adhesive part 6; Through hole 7; Second sealing ring 8. DETAILED DESCRIPTION

[0036] The following is an explanation of the embodiments of the present invention by specific specific embodiments, and those skilled in the art can fully understand other advantages and technical effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through different specific embodiments, and the details in this specification can also be applied based on different viewpoints, and various modifications or changes can be made without deviating from the general design concept of the invention. It should be noted that, in the absence of conflict, the following embodiments and the features in the embodiments can be combined with each other. The following exemplary embodiments of the present invention can be implemented in a variety of different forms and should not be interpreted as being limited to the specific embodiments described here. It should be understood that these embodiments are provided to make the disclosure of the present invention thorough and complete, and to fully convey the technical solutions of these exemplary specific embodiments to those skilled in the art. It should be understood that when an element is referred to as "connected" or "coupled" to another element, the element can be directly connected or coupled to another element, or there can be an intermediate element. The difference is that when an element is referred to as "directly connected" or "directly coupled" to another element, there is no intermediate element. In all the drawings, the same reference numerals always represent the same elements.

[0037] First embodiment, reference Figure 5 and Figure 6 As shown, the present invention provides a semiconductor device vacuum gate valve sealing structure, which has a metal body 1 and a connecting portion 2 formed on the metal body 1, and also includes: a metal skeleton sealing ring; The metal frame sealing ring is composed of a metal frame 3 and a first sealing ring 4; The metal frame 3 is formed with a mounting portion 5 and an adhesive portion 6; The metal skeleton sealing ring is fixed to the connecting part 2 through the mounting part 5, the bonding part 6 is covered by the first sealing ring 4, and the top of the first sealing ring 4 at least partially protrudes from the connecting part 2; The first sealing ring 4 is integrally formed, pressed and covered on the bonding portion 6 .

[0038] in, Figure 5 The situation shown is that the bonding portion 6 is located on the connecting portion 2, and the bonding portion 6 is covered by the first sealing ring 4 and must protrude from the connecting portion 2. There is another situation such as Figure 6 As shown, the bonding portion 6 is located in the connecting portion 2 , and the first sealing ring 4 needs to be integrally formed and pressed so that at least a portion of the first sealing ring 4 protrudes from the connecting portion 2 .

[0039] In this embodiment, the bonding portion 6 is not designed with a through hole 7. After the mounting portion 5 is fixed to the connecting portion 2, a gap is formed between the lower wall of the bonding portion 6 and the top wall of the metal body 1. The first sealing ring 4 fills the gap to physically cover and hold the bonding portion 6, so that a stable connection can be achieved without glue.

[0040] Preferably, the thickness of the first sealing ring 4 covering the adhesive portion 6 is greater than 1 mm.

[0041] Optionally, the mounting portion 5 and the connecting portion 2 are fixed by snap-fit, thread, interference fit or welding.

[0042] It should be noted that, because the mounting portion 5 and the connecting portion 2 are designed, the present invention can be applied to a single-sided groove, a double-sided groove and a groove without a side.

[0043] In addition, it should also be understood that, although the terms "first", "second", etc. may be used here to describe different elements, components, regions, layers and / or parts, these elements, components, regions, layers and / or parts should not be limited by these terms. These terms are only used to distinguish an element, component, region, layer or part from another element, component, region, layer or part. Therefore, without departing from the teachings of exemplary embodiments of the present invention, the first element, component, region, layer or part discussed below may also be referred to as the second element, component, region, layer or part.

[0044] The second embodiment, referring to Figure 7 As shown, the present invention provides a semiconductor device vacuum gate valve sealing structure, which is further improved on the basis of the above-mentioned first embodiment, and the same parts are not repeated here; A through hole 7 is formed on the bonding portion 6 , and the first sealing ring 4 passes through and fills the through hole 7 .

[0045] In this embodiment, the bonding portion 6 is designed with a through hole 7, and the first sealing ring 4 passes through and fills the through hole 7 to physically cover and pull the bonding portion 6, so that a stable connection can be achieved without glue. It should be noted that the shape of the through hole 7 is not limited, and can be a circular hole, a polygonal hole, a variable diameter hole, etc., and the angle of the through hole 7 is not limited, as long as it is easy to process and can allow the first sealing ring 4 to pass through and fill it.

[0046] Preferably, two openings of the through hole 7 are formed on the top wall of the bonding portion 6, and the through hole 7 is formed in the bonding portion 6, referring to Figure 8 shown.

[0047] Furthermore, there is no restriction on whether the first sealing ring 4 passing through the through hole 7 and other parts of the first sealing ring 4 are connected together. As long as a part of the first sealing ring 4 is in the through hole 7, the technical effect of increasing the stability of the connection can be achieved.

[0048] Preferably, the edge of the through hole 7 is chamfered to avoid cutting the first sealing ring to form a weak point that is easily damaged.

[0049] Preferably, the thickness of the first sealing ring 4 covering the adhesive portion 6 is greater than 1 mm.

[0050] Optionally, the mounting portion 5 and the connecting portion 2 are fixed by snap-fit, thread, interference fit or welding.

[0051] The third embodiment, referring to Fig. 9 As shown, the present invention provides a semiconductor device vacuum gate valve sealing structure, which is further improved on the basis of the above second embodiment, and the same parts are not repeated here; There is another situation that there is no gap between the lower wall of the bonding part 6 and the top wall of the metal body 1, but the product has a process tolerance, and the existence of the tolerance will affect the sealing effect. Therefore, the second sealing ring 8 is designed to cover the connection between the connecting part 2 and the mounting part 5.

[0052] In a fourth embodiment, the present invention provides a method for manufacturing a semiconductor device vacuum gate valve sealing structure, which is used to manufacture the semiconductor device vacuum gate valve sealing structure described in any of the above embodiments, comprising the following steps: S1, providing a metal body 1 having a connecting portion 2 and a metal skeleton 3, wherein the metal body 1 and the metal skeleton 3 are manufactured by casting or machining using existing technology; S3, providing an upper mold, wherein the upper mold is formed into a molding cavity mold of a sealing ring shape and size; Providing a middle mold, wherein the middle mold is formed into a molding cavity mold for accommodating the metal skeleton 3; Providing a lower die, the lower die is used to support the middle die; S4, placing the middle mold on the lower mold, and adding a specified adhesive material on the bonding portion 6; S4, cover the upper mold and enter the vulcanization molding equipment for vulcanization molding; S5, removing the upper die, the middle die and the lower die to obtain a metal skeleton sealing ring; S6, assemble and install the connecting part 2 and the mounting part 5, and fix them by snap-fit, thread, interference fit or welding to form an integral gate valve.

[0053] Optionally, the step of making a second sealing ring 8 is included. Whether to make the second sealing ring 8 is determined by whether a gap is formed between the lower wall of the bonding portion 6 and the top wall of the metal body 1 (it should be noted that the gap refers to the gap reserved by the active design, not the tolerance caused by the process). When there is a gap, the rubber fills the gap when the first sealing ring 4 is pressed, so a seal is formed between the lower wall of the bonding portion 6 and the top wall of the metal body 1; If there is no gap or the gap is extremely small, although the glue will be pressed into the gap when pressing the first sealing ring 4, the sealing effect is poor and there may be a weak point of leakage. It is recommended to make a second sealing ring 8 as a supplement to enhance the anti-leakage, add a specified glue at the connection between the connecting part 2 and the mounting part 5, and seal with the second sealing ring 8 to avoid leakage between the lower wall of the bonding part 6 and the top wall of the metal body 1; Replace the upper mold with an upper mold having a second sealing ring 8 cavity, and enter the vulcanization molding equipment for vulcanization molding.

[0054] Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by those of ordinary skill in the art to which the present invention belongs. It will also be understood that, unless expressly defined herein, terms such as those defined in general dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant art, and not interpreted in an ideal or overly formal sense.

[0055] The present invention has been described in detail above through specific implementation modes and embodiments, but these do not constitute limitations of the present invention. Without departing from the principles of the present invention, those skilled in the art may also make many variations and improvements, which should also be regarded as the protection scope of the present invention.

Claims

1. A semiconductor device vacuum gate valve sealing structure, comprising a metal body (1) and a connecting portion (2) formed on the metal body (1), characterized in that: Also includes: Metal frame sealing ring; The metal frame sealing ring is composed of a metal frame (3) and a first sealing ring (4); The metal frame (3) is formed with a mounting portion (5) and a bonding portion (6); The metal skeleton sealing ring is fixed to the connecting portion (2) via the mounting portion (5), the bonding portion (6) is covered by the first sealing ring (4), and the top of the first sealing ring (4) at least partially protrudes from the connecting portion (2).

2. The semiconductor device vacuum gate valve sealing structure according to claim 1, characterized in that: The first sealing ring (4) is integrally formed and pressed to cover the bonding portion (6).

3. The semiconductor device vacuum gate valve sealing structure according to claim 1, characterized in that: A through hole (7) is formed on the bonding portion (6), and the first sealing ring (4) passes through and fills the through hole (7).

4. The semiconductor device vacuum gate valve sealing structure according to claim 4, characterized in that: The edge of the through hole (7) is formed with a chamfer.

5. The semiconductor device vacuum gate valve sealing structure according to claim 1, wherein: The thickness of the first sealing ring (4) covering the bonding portion (6) is greater than 1 mm at each location.

6. The semiconductor device vacuum gate valve sealing structure according to claim 1, wherein: The mounting portion (5) and the connecting portion (2) are fixed by means of snap fastening, thread, interference fit or welding.

7. The semiconductor device vacuum gate valve sealing structure according to claim 1, wherein: Also includes: A second sealing ring (8) covers the connection between the connecting portion (2) and the mounting portion (5).

8. A method for manufacturing a semiconductor device vacuum gate valve sealing structure, which is used to manufacture the semiconductor device vacuum gate valve sealing structure according to any one of claims 1 to 6, characterized in that: The following steps are involved: S1, providing a metal body (1) having a connecting portion (2) and a metal skeleton (3); S2, providing an upper mold, wherein the upper mold is formed into a molding cavity mold of the shape and size of the sealing ring; Providing a middle mold, wherein the middle mold is formed into a molding cavity mold for accommodating the metal skeleton (3); Providing a lower die, the lower die is used to support the middle die; S3, placing the middle mold on the lower mold, and adding a specified adhesive material to the bonding portion (6); S4, cover the upper mold and enter the vulcanization molding equipment for vulcanization molding; S5, removing the upper die, the middle die and the lower die to obtain a metal skeleton sealing ring; S6, assembling and assembling the connecting portion (2) and the mounting portion (5) to form an integral gate valve.

Images