Silicon-based resistor and manufacturing method thereof

Abstract

The invention provides a silicon-based resistor and a manufacturing method thereof, and the method comprises the steps: obtaining a resistor substrate and the material data of the resistor substrate, calculating the resistance of a to-be-manufactured resistor according to the material data, and enabling the material data to comprise the resistivity, the length and the area of the resistor substrate; sequentially cleaning and oxidizing the resistor substrate to obtain an oxidized substrate; sequentially carrying out photoetching, boron injection and cleaning treatment on the oxidized substrate to obtain a substrate silicon wafer; sequentially carrying out metal evaporation, metal photoetching, metal corrosion, metal photoresist removal and alloy treatment on the front surface of the substrate silicon wafer to obtain a silicon wafer to be subjected to film pasting; and sequentially carrying out film pasting, corrosion and metal evaporation treatment on the silicon wafer to be subjected to film pasting to obtain the silicon-based resistor matched with the resistor. The silicon-based resistor manufactured by the manufacturing method of the silicon-based resistor is low in cost, and the manufactured silicon-based resistor is packaged by adopting a patch, so that the occupied area of the silicon-based resistor is small, and the problems of large resistor area, high manufacturing cost and complex processing technology of the existing resistor are solved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and in particular relates to a silicon-based resistor and a method for manufacturing the same. Background Art

[0002] Resistance is used to indicate the magnitude of the conductor's resistance to current. The greater the conductor's resistance, the greater the conductor's resistance to current. Different conductors generally have different resistances. Resistance is a property of the conductor itself. Resistor elements are energy-consuming elements that hinder current. Summary of the invention

[0003] An embodiment of the present application provides a silicon-based resistor and a method for manufacturing the same to solve the problems of existing resistors such as large resistance area, high manufacturing cost and complex processing technology.

[0004] In a first aspect, an embodiment of the present application provides a method for manufacturing a silicon-based resistor, comprising the following steps: Acquire a resistor substrate and material data of the resistor substrate, and calculate the resistance of the resistor to be manufactured according to the material data, wherein the material data includes the resistivity, length and area of ​​the resistor substrate; The resistor substrate is sequentially cleaned and oxidized to obtain an oxidized substrate; The oxidized substrate is sequentially subjected to photolithography, boron implantation and cleaning treatment to obtain a substrate silicon wafer; The front side of the substrate silicon wafer is subjected to metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment in sequence to obtain a silicon wafer to be laminated; The silicon wafer to be film-mounted is subjected to film-mounting, corrosion and metal evaporation treatments in sequence to obtain a silicon-based resistor matching the resistor.

[0005] Optionally, the resistor substrate is sequentially cleaned and oxidized to obtain an oxidized substrate, comprising: Using a cleaning liquid to clean the resistor substrate at a first temperature and for a first time to obtain a first substrate; The first substrate is cleaned with clean water for a second time and then dried to obtain a second substrate; The second substrate is oxidized by an oxidation process to obtain an oxidized substrate.

[0006] Optionally, the oxidation process comprises: placing the second substrate in a sealed quartz boat, and inputting nitrogen gas at a first speed for a third time on the quartz boat at a second temperature to obtain a first oxidation stage; In the first oxidation stage, the temperature of the quartz boat is increased to a third temperature, the nitrogen gas input to the quartz boat is stopped, and the oxygen gas input to the quartz boat is switched to a fourth time, thereby obtaining a second oxidation stage; In the second oxidation stage, oxygen is input into the quartz boat at a first rate and hydrogen is input into the quartz boat at a second rate at the same time and hydrogen-oxygen synthesis is performed for a fifth time, thereby obtaining a third oxidation stage; In the third oxidation stage, oxygen is input into the quartz boat at the first rate and for a sixth time, thereby obtaining a fourth oxidation stage; In the fourth oxidation stage, trichloroethane is input into the quartz boat at a third rate and a seventh time to obtain a fifth oxidation stage; In the fifth oxidation stage, dry oxygen is input into the quartz boat for an eighth time and the temperature of the quartz boat is reduced from the third temperature to the second temperature to obtain the oxidized substrate.

[0007] Optionally, the oxidized substrate is subjected to photolithography, boron implantation and cleaning treatments in sequence to obtain a substrate silicon wafer, comprising: The oxide layer of the oxide substrate is subjected to sequential treatments of coating, pre-baking, alignment, development, fixing, film hardening, oxide layer etching and degumming to obtain a photolithography substrate; implanting boron into the photolithography substrate at a first dose and a first energy to obtain a third substrate; The third substrate is cleaned for a first time using a cleaning solution at a first temperature and for a first time, and then cleaned for a second time using clean water to obtain a substrate silicon wafer.

[0008] Optionally, the front side of the substrate silicon wafer is subjected to metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment in sequence to obtain the silicon wafer to be film-mounted, comprising: Performing evaporation treatment on the front metal titanium and aluminum of the substrate silicon wafer to obtain a first silicon wafer; The first silicon wafer is sequentially subjected to glue coating, pre-baking, alignment, development, fixing and film hardening treatments to obtain a second silicon wafer; The second silicon wafer is sequentially subjected to front metal aluminum etching, metal titanium etching and wafer surface treatment using EDTA etching solution to obtain a third silicon wafer; The front metal of the third silicon wafer is processed by a degumming process to obtain a fourth silicon wafer; The metal layer of the fourth silicon wafer is synthesized using a fourth temperature and alloying time to obtain a silicon wafer to be laminated.

[0009] Optionally, the method for manufacturing the silicon-based resistor includes: obtaining the EDTA etching solution, wherein the content of obtaining the EDTA etching solution includes: 131 g of ethylenediaminetetraacetic acid was placed in a beaker, and 1000 ml of deionized water was injected into the beaker and stirred to obtain an EDTA emulsion; Add 280 ml of ammonia water into the EDTA emulsion in the beaker and stir to obtain an EDTA mixed solution; 3000 ml of hydrogen peroxide and 6000 ml of deionized water were sequentially injected into the EDTA mixed solution in the beaker and stirred to obtain the EDTA etching solution.

[0010] Optionally, the degumming process includes: Obtain a first degumming cylinder and a second degumming cylinder with stripping liquid that meet the temperature requirements, obtain a third degumming cylinder with methanol liquid, and obtain a fourth degumming cylinder and a fifth degumming cylinder with isopropanol liquid; placing the third silicon wafer into the first debonding tank for debonding for a second time to obtain a first debonded silicon wafer; placing the first debonded silicon wafer into the second debonded tank for rinsing for a ninth time to obtain a second debonded silicon wafer; placing the second debonded silicon wafer into the fourth debonding tank for rinsing for a tenth time to obtain a third debonded silicon wafer; placing the third debonded silicon wafer into the fifth debonding tank and rinsing it for the tenth time to obtain a fourth debonded silicon wafer; placing the fourth debonded silicon wafer into the third debonding tank and rinsing it for the tenth time to obtain a fifth debonded silicon wafer; placing the fifth debonded silicon wafer into a three-stage flushing tank for flushing to obtain a sixth debonded silicon wafer; The sixth debonded silicon wafer is subjected to spin drying treatment using a spin dryer to obtain a fourth silicon wafer.

[0011] Optionally, the silicon wafer to be film-mounted is subjected to film-mounting, corrosion and metal evaporation treatments in sequence to obtain a silicon-based resistor matching the resistor, which includes: After laminating the front side of the silicon wafer to be laminating, a laminating silicon wafer is obtained; The back metal of the film-attached silicon wafer is corroded by an etching process to obtain a silicon wafer to be evaporated; The back metal of the silicon wafer to be evaporated is subjected to metal titanium, metal nickel and metal silver evaporation treatment in sequence to obtain a silicon-based resistor matching the resistor.

[0012] Optionally, the corrosion process includes: The back metal of the film-attached silicon wafer is subjected to etching treatment using a stress relief etching solution for a twelfth time and a first etching temperature to obtain a first etching silicon wafer; The first etched silicon wafer is etched with a decontamination etchant for a thirteenth time and a second etch temperature to obtain a second etched silicon wafer; The second etched silicon wafer is etched with a buffered oxide etchant for a fourteenth time and at a third etching temperature to obtain the silicon wafer to be evaporated.

[0013] In a second aspect, an embodiment of the present application provides a silicon-based resistor manufactured by the above-mentioned method for manufacturing a silicon-based resistor, comprising a silicon-based layer, a first metal layer located above the silicon-based layer, and a second metal layer located below the silicon-based layer.

[0014] An embodiment of the present application provides a silicon-based resistor and a manufacturing method thereof, the manufacturing method of the silicon-based resistor includes obtaining the material data of the resistor substrate and the resistor substrate, calculating the resistance of the resistor to be manufactured according to the material data, the material data including the resistivity, length and area of ​​the resistor substrate; cleaning and oxidizing the resistor substrate in sequence to obtain an oxidized substrate; performing photolithography, boron implantation and cleaning on the oxidized substrate in sequence to obtain a substrate silicon wafer; performing metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment on the front of the substrate silicon wafer in sequence to obtain a silicon wafer to be filmed; performing filming, corrosion and metal evaporation on the silicon wafer to be filmed in sequence to obtain a silicon-based resistor matching the resistor. The silicon-based resistor is manufactured by the manufacturing method of the silicon-based resistor, the cost is low and the manufactured silicon-based resistor is packaged by patch, so that the silicon-based resistor occupies a small area, which solves the problems of large resistance area, high manufacturing cost and complex processing technology of the current resistor. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solution in an embodiment of the present application, the following is a brief introduction to the drawings required for the description of the embodiment. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0016] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings. In the following description, the same reference numerals represent the same parts.

[0017] Figure 1 A flowchart of a method for manufacturing a silicon-based resistor provided for one embodiment of the present application.

[0018] Figure 2 A schematic diagram of the structure of a silicon-based resistor provided for one embodiment of the present application. DETAILED DESCRIPTION

[0019] The technical scheme in one embodiment of the present application will be clearly and completely described below in conjunction with the drawings in one embodiment of the present application. Obviously, the described embodiment is only a part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0020] An embodiment of the present application provides a silicon-based resistor and a method for manufacturing the same to solve the problems of existing resistors such as large resistance area, high manufacturing cost and complex processing technology.

[0021] Embodiment 1: An embodiment of the present application provides a method for manufacturing a silicon-based resistor. For example, see Figure 1 , Figure 1 A flowchart of a method for manufacturing a silicon-based resistor provided for one embodiment of the present application.

[0022] like Figure 1 As shown, the present invention provides a method for manufacturing a silicon-based resistor, comprising the following steps: S100. Obtaining the resistor substrate and the material data of the resistor substrate, and calculating the resistance of the resistor to be manufactured according to the material data, wherein the material data includes the resistivity, length and area of ​​the resistor substrate; S200. The resistor substrate is sequentially cleaned and oxidized to obtain an oxidized substrate; S300. The oxidized substrate is sequentially subjected to photolithography, boron implantation and cleaning to obtain a substrate silicon wafer; S400. The front side of the substrate silicon wafer is subjected to metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment in sequence to obtain a silicon wafer to be laminated; S500. Perform film lamination, corrosion and metal evaporation treatments on the silicon wafer to be laminated in sequence to obtain a silicon-based resistor that matches the resistor.

[0023] It is further explained that in step S100, the materials required for manufacturing the silicon-based resistor are obtained. In steps S200 to S500, the resistor substrate according to step S100 is first oxidized in step S200 to obtain an oxidized substrate, and then the oxidized substrate is made into a p-type semiconductor in step S300 to obtain a substrate silicon wafer, and then the front side of the substrate silicon wafer is metal-treated in step S400 to obtain a silicon wafer to be film-attached; finally, the back side of the silicon wafer to be film-attached is processed to obtain a silicon-based resistor matching the resistor. In this embodiment, the oxidation treatment of the resistor substrate in step S200 is to prevent the surface of the manufactured silicon-based resistor from being contaminated, and also to facilitate the insulation effect in the manufacturing process of the silicon-based resistor.

[0024] It is further explained that the method for manufacturing the silicon-based resistor has low processing cost and small occupied area for manufacturing the silicon-based resistor matching the resistor.

[0025] In the invention embodiment of the application, the resistor substrate can be selected as a P-type double-sided polished silicon wafer, the resistivity of the resistor substrate can be selected as 2Ω.cm±10%, and the thickness of the resistor substrate can be selected as 150um±10um or 180um±10um or 200um±10um.

[0026] In the invention embodiment of the application, the resistance of the resistor to be manufactured is calculated using the resistance calculation formula according to the material data. Specifically, the resistance calculation formula is R=ρ×L / S, where L is the length of the resistor substrate, unit: um; ρ is the resistivity of the resistor substrate, S is the area of ​​the resistor substrate, S=H×W area, unit: um^ 2 The resistance R of the resistor to be manufactured can be calculated using the material data shown in Table 1. Table 1 is the material data of the resistor substrate.

[0027] Table 1

[0028] An embodiment of the present application provides a method for manufacturing a silicon-based resistor, including obtaining a resistor substrate and material data of the resistor substrate, calculating the resistance of the resistor to be manufactured based on the material data, the material data including the resistivity, length and area of ​​the resistor substrate; sequentially cleaning and oxidizing the resistor substrate to obtain an oxidized substrate; sequentially performing photolithography, boron implantation and cleaning on the oxidized substrate to obtain a substrate silicon wafer; sequentially performing metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment on the front of the substrate silicon wafer to obtain a silicon wafer to be filmed; sequentially performing filming, corrosion and metal evaporation on the silicon wafer to be filmed to obtain a silicon-based resistor that matches the resistor. The silicon-based resistor is manufactured by the manufacturing method of the silicon-based resistor, with low cost and the manufactured silicon-based resistor is packaged by patch, so that the silicon-based resistor occupies a small area, solving the problems of large resistance area, high manufacturing cost and complex processing technology of the current resistor.

[0029] In the invention embodiment of the application, the resistor substrate is cleaned and oxidized in sequence to obtain an oxidized substrate, which includes: Using a cleaning liquid to clean the resistor substrate at a first temperature and for a first time to obtain a first substrate; The first substrate is cleaned with clean water for a second time and then dried to obtain a second substrate; The second substrate is oxidized by an oxidation process to obtain an oxidized substrate.

[0030] It is further explained that in the process of manufacturing silicon-based resistors, NH 3 H 2O:H 2 O 2 :H 2 O = 1:1:5 cleaning solution and HCl:H 2 O 2 :H 2 The resistor substrate obtained in step S100 is cleaned at a first temperature and for a first time using a cleaning solution of O = 1:1:5 to obtain a first substrate. The cleaned first substrate is rinsed with clean water for a second time, and dried to obtain a second substrate. The second substrate is then oxidized by an oxidation process to obtain an oxidized substrate. Specifically, the first temperature can be 75±5°C, the first time can be 10 minutes, and the second time can be 10±1 minutes.

[0031] In the inventive embodiment of the application, the oxidation process includes: placing the cleaning liquid second substrate into a sealed quartz boat, and inputting nitrogen gas at a first speed and for a third time into the cleaning liquid quartz boat at a second temperature, thereby obtaining a first oxidation stage; In the first oxidation stage of the cleaning liquid, the temperature of the cleaning liquid quartz boat is increased to a third temperature, the input of cleaning liquid nitrogen into the cleaning liquid quartz boat is stopped, and the input of oxygen into the cleaning liquid quartz boat is switched to a fourth time, thereby obtaining a second oxidation stage; In the second oxidation stage of the cleaning liquid, oxygen is input into the cleaning liquid quartz boat at a first rate and hydrogen is simultaneously input into the cleaning liquid quartz boat at a second rate and hydrogen and oxygen synthesis is performed for a fifth time to obtain a third oxidation stage; In the third oxidation stage of the cleaning liquid, oxygen is input into the cleaning liquid quartz boat at the first rate of the cleaning liquid and the sixth time, so as to obtain the fourth oxidation stage; In the fourth oxidation stage of the cleaning liquid, trichloroethane is input into the cleaning liquid quartz boat at the third rate and the seventh time to obtain the fifth oxidation stage; In the fifth oxidation stage of the cleaning liquid, dry oxygen is input into the cleaning liquid quartz boat at the eighth time and the temperature of the cleaning liquid quartz boat is reduced from the third cleaning liquid temperature to the second cleaning liquid temperature to obtain an oxidized substrate.

[0032] It is further explained that the second temperature can be 750±3℃, the first speed can be 6±1L / min, the third time can be 30±1min, the third temperature can be 950±3℃, the fourth time can be 20±1min, the first rate can be 3.5±1L / min, the second rate can be 6.5±1L / min, the fifth time can be 240±1min, the sixth time can be 20±1min, the seventh time can be 10±1min, the third rate can be 80±1mL / min, and the eighth time can be 120±1min. In this embodiment, the second substrate is first placed in a quartz boat, and then the boat is fed into the furnace tube of the quartz boat (boat speed 20±1 cm / s). After the boat is fed, the ground mouth is covered, and nitrogen (6±1 liters per minute) is introduced at 750±3°C for 30±1 minutes. The temperature is raised from 750°C to 950°C, and the temperature is maintained at 950±3°C. The nitrogen is stopped and replaced with oxygen. After the oxygen is introduced for 20±1 minutes, oxygen and hydrogen are introduced into the quartz boat for hydrogen-oxygen synthesis. The hydrogen-oxygen synthesis time is 240±1 minutes, wherein the oxygen introduction speed is The speed of hydrogen introduction is 3.5±1 liters per minute, and the speed of hydrogen introduction is 6.5±1 liters per minute; after the hydrogen-oxygen synthesis is completed, oxygen is introduced for 20±1 minutes, wherein the speed of oxygen introduction is 3.5±1 liters per minute; then trichloroethane is introduced for 10±1 minutes, wherein the speed of trichloroethane per minute is 80±1 milliliters; then dry oxygen is introduced for 120±1 minutes, the temperature is reduced from 950°C to 750°C, the ground mouth is removed, and the oxidized substrate is taken out of the quartz boat (boat speed 20±1cm / s), and the oxidation process of the second substrate is completed.

[0033] In the invention embodiment of the application, the oxidized substrate is subjected to photolithography, boron implantation and cleaning treatment in sequence to obtain a substrate silicon wafer comprising: The oxide layer of the oxide substrate is subjected to sequential treatments of coating, pre-baking, alignment, development, fixing, film hardening, oxide layer etching and degumming to obtain a photolithography substrate; implanting boron into the photolithography substrate at a first dosage and a first energy to obtain a third substrate; The third substrate is cleaned for the first time with a cleaning solution at a first temperature and for a first time, and then cleaned for the second time with clean water to obtain a substrate silicon wafer.

[0034] It is further explained that the first dose can be 3-8E13, and the first energy can be 50Kev. In this embodiment, the oxide layer of the oxide substrate is sequentially coated, pre-baked, aligned, developed, fixed, hardened, oxide layer etched and debonded to obtain a photolithographic substrate. Specifically, the oxide substrate is coated with a photoresist having a viscosity of 100±1SC and a coating thickness of 28500±2000Å, and then the coated oxide substrate is dried in an oven at 85±5°C for 30±1 minutes; a mask is set on the oxide substrate, and the oxide substrate with the mask set is exposed to the mercury lamp of the photolithography machine for 22±1 seconds, so that the mask pattern is imaged on the surface of the oxide substrate; the oxide substrate after the mask is first developed with xylene for 10±1 seconds, and then fixed with butyl acetate for 8±1 seconds; the oxide substrate after fixing is dried in an oven at 140°C~155°C for 30±1 minutes; the hardened oxide substrate is exposed with H 2 O: NH 4 F = 6:1 etching solution for 10 ± 1 minutes; the oxidized substrate after the oxide layer is etched is treated with H 2 SO 4 :H 2 O 2 =3:1 soaking solution for 10±1 minutes to remove the photoresist and obtain a photolithography substrate. The photolithography substrate is implanted with boron at an implantation dose of 3-8E13 and an energy of 50Kev to obtain a third substrate. 3 H 2 O:H 2 O 2 :H 2 O = 1:1:5 cleaning solution and HCl:H 2 O 2 :H 2 The third substrate is cleaned with a cleaning solution of O = 1:1:5 at a first temperature for a first time, then rinsed with clean water for a second time, and dried to obtain a substrate silicon wafer.

[0035] In the invention embodiment of the application, metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment are sequentially performed on the front side of the substrate silicon wafer to obtain the silicon wafer to be film-mounted, including: Performing evaporation treatment on the front metal titanium and aluminum of the substrate silicon wafer to obtain a first silicon wafer; The first silicon wafer is sequentially subjected to glue coating, pre-baking, alignment, development, fixing and film hardening treatments to obtain a second silicon wafer; The second silicon wafer is sequentially subjected to front metal aluminum etching, metal titanium etching and wafer surface treatment using EDTA etching solution to obtain a third silicon wafer; The front metal of the third silicon wafer is processed by a degumming process to obtain a fourth silicon wafer; The metal layer of the fourth silicon wafer is synthesized using the fourth temperature and alloying time to obtain a silicon wafer to be laminated.

[0036] It is further explained that the fourth temperature can be 420±10°C, and the alloying time can be 30±1min. The manufacturing method of the silicon-based resistor evaporates the welding metal on the front side of the substrate silicon wafer. During the metal evaporation process, the evaporated metal Ti=1000±100Å, and the evaporated metal AL=40000±1000Å. After that, the first silicon wafer is sequentially subjected to glue coating, pre-baking, alignment, development, fixing and hardening treatment to realize the front metal lithography of the first silicon wafer to obtain the second silicon wafer. The specific content of the front metal corrosion of the second silicon wafer is: first, HAC:HNO is used 3 =3:1 etching solution, 19±1℃ etching temperature, 600±10 Sec etching time to corrode the Al metal on the front of the second silicon wafer; followed by using PBE solution etching solution at 23±3℃ etching temperature and 10±1 Sec etching time to corrode the Ti metal on the front of the second silicon wafer; finally, using EDTA etching solution at 15±1 Sec etching time to treat the surface of the second silicon wafer to obtain the third silicon wafer. The PBE solution etching solution is composed of (8.6~9.2)% HNO 3 It is composed of a mixture of (1.87~2.17)% HF and (3.2~4.2)% HAC solution.

[0037] In this embodiment, the content of metal photolithography includes coating the first silicon wafer with a photoresist having a viscosity of 100±1SC and a coating thickness of 28500±2000Å, and then drying the coated first silicon wafer in an oven at 85±5°C for 30±1 minutes; setting a mask on the first silicon wafer, exposing the first silicon wafer with the set mask to a mercury lamp of a photolithography machine for 22±1 seconds, so that the mask pattern is imaged on the surface of the first silicon wafer; first developing the masked first silicon wafer with xylene for 10±1 seconds, and then fixing it with butyl acetate for 8±1 seconds; and drying the fixed first silicon wafer in an oven at 140°C~155°C for 30±1 minutes.

[0038] In this embodiment, obtaining the content of EDTA etching solution includes: 131 g of ethylenediaminetetraacetic acid was placed in a beaker, and 1000 ml of deionized water was added to the beaker and stirred to obtain an EDTA emulsion; Add 280 ml of ammonia water to the EDTA emulsion in the beaker and stir to obtain an EDTA mixed solution; Into the EDTA mixed solution in the beaker, 3000 ml of hydrogen peroxide and 6000 ml of deionized water were injected in sequence and stirred to obtain EDTA etching solution.

[0039] In the inventive embodiment of the application, the degumming process includes: Obtain a first degumming cylinder and a second degumming cylinder with stripping liquid that meet the temperature requirements, obtain a third degumming cylinder with methanol liquid, and obtain a fourth degumming cylinder and a fifth degumming cylinder with isopropanol liquid; placing the third silicon wafer into the first debonding tank and performing debonding treatment for the second time to obtain a first debonded silicon wafer; placing the first debonded silicon wafer into the second debonding tank for rinsing for a ninth time to obtain a second debonded silicon wafer; The second debonded silicon wafer is placed in the fourth debonding tank and rinsed for a tenth time to obtain a third debonded silicon wafer; placing the third debonded silicon wafer into the fifth debonding tank and rinsing it for a tenth time to obtain a fourth debonded silicon wafer; placing the fourth debonded silicon wafer into the third debonding tank and rinsing it for a tenth time to obtain a fifth debonded silicon wafer; The fifth debonded silicon wafer is placed in a three-stage flushing tank for flushing to obtain a sixth debonded silicon wafer; The sixth debonded silicon wafer is subjected to spin drying by a spin dryer to obtain a fourth silicon wafer.

[0040] It is further explained that the temperature of the first degumming tank can be 90±5℃, the temperature of the second degumming tank can be 50±5℃, the ninth time can be 60±10s, and the tenth time can be 180±10s. The specific contents of the degumming process of the manufacturing method of the silicon-based resistor include: first placing the third silicon wafer into the first degumming tank, and turning on the first degumming tank timer, and degumming for 10±1 minutes; after the degumming of the first degumming tank is completed, placing the first degumming silicon wafer into the second degumming tank and turning on the second degumming tank timer to rinse for 1 minute±10 seconds; after the second degumming tank process is completed, placing the second degumming silicon wafer into the fourth degumming tank, and turning on the timer to rinse for 3 minutes±10 seconds; after the fourth degumming tank is finished rinsing, placing the third degumming silicon wafer into the fifth degumming tank, and turning on the timer to rinse for 3 minutes±10 seconds; After rinsing in the degumming tank, the fourth degumming silicon wafer is placed in the third degumming tank, and the timer is turned on to rinse for 3 minutes ± 10 seconds; after rinsing in the third degumming tank, the fifth degumming silicon wafer is placed in a three-stage flushing tank (first-stage flushing for 10 ± 1 minutes, second-stage flushing for 10 ± 1 minutes, and third-stage flushing for 10 ± 1 minutes), and the N2 valve of the flushing tank is opened for bubbling; the sixth degumming silicon wafer that has been rinsed is placed in a special spin dryer for the metal layer for spin drying, with a spray speed of 300 rpm, a spray time of t = 5 ± 1 minutes, a spin drying speed of 900 rpm, and a spin drying time of t = 10 ± 1 minutes to obtain the fourth silicon wafer.

[0041] In the invention embodiment of the application, the silicon wafer to be filmed is subjected to filming, etching and metal evaporation treatments in sequence to obtain a silicon-based resistor matching the resistor, including: After laminating the front side of the silicon wafer to be laminarized, a laminarized silicon wafer is obtained; The back metal of the film-attached silicon wafer is corroded by an etching process to obtain a silicon wafer to be evaporated; The back metal of the silicon wafer to be evaporated is subjected to metal titanium, metal nickel and metal silver evaporation treatment in sequence to obtain a silicon-based resistor matching the resistor; Etching processes include: The back metal of the film-attached silicon wafer is subjected to etching treatment using a stress relief etching solution for a twelfth time and a first etching temperature to obtain a first etching silicon wafer; The first etched silicon wafer is etched with a decontamination etchant for a thirteenth time and a second etch temperature to obtain a second etched silicon wafer; The second etched silicon wafer is etched with a buffered oxide etchant for a fourteenth time and at a third etching temperature to obtain a silicon wafer to be evaporated.

[0042] It is further explained that the twelfth time can be 450±20s, the first corrosion temperature can be 19±1°C, the thirteenth time can be 300±20s, the second corrosion temperature can be 23±3°C, the fourteenth time can be 300±20s, and the third corrosion temperature can be 23±3°C. 3 : (0.6~0.8)% hydrogen fluoride HF: (2.3~2.9)% acetic acid HAC: (44.81~49.21)% water constitutes stress corrosion relief solution. 2 O: Ammonium fluoride NH 4 F: Hydrogen peroxide 2 O 2 =10:1:1 decontamination and corrosion solution. 4 F: HF = 10:1 buffered oxide etching solution. In this embodiment, the amount of metal evaporated on the back side of the silicon wafer to be evaporated includes titanium Ti = 1000 ± 100Å, nickel Ni = 2000 ± 100Å and silver Ag = 12000 ± 1000Å.

[0043] Embodiment 2: Figure 2 A schematic diagram of the structure of a silicon-based resistor provided for one embodiment of the present application.

[0044] like Figure 2 As shown, the present invention also provides a silicon-based resistor manufactured by the manufacturing method of the above-mentioned silicon-based resistor, including a silicon-based layer 1, a first metal layer 2 located above the silicon-based layer 1, and a second metal layer 3 located below the silicon-based layer 1.

[0045] It is further explained that the content of the manufacturing method of the silicon-based resistor has been described in Example 1, and will not be repeated in this embodiment. The silicon-based resistor is manufactured by the manufacturing method of the silicon-based resistor, and the manufacturing cost is low and the installation is convenient. The silicon-based resistor belongs to the surface mount package and occupies a small area.

[0046] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more features.

[0047] The above is a detailed introduction to the manufacturing method of the silicon-based resistor provided in an embodiment of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea; at the same time, for technical personnel in this field, according to the idea of ​​the present application, there will be changes in the specific implementation method and application scope. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for manufacturing a silicon-based resistor, characterized in that: The following steps are involved: Acquire a resistor substrate and material data of the resistor substrate, and calculate the resistance of the resistor to be manufactured according to the material data, wherein the material data includes the resistivity, length and area of ​​the resistor substrate; The resistor substrate is sequentially cleaned and oxidized to obtain an oxidized substrate; The oxidized substrate is sequentially subjected to photolithography, boron implantation and cleaning treatment to obtain a substrate silicon wafer; The front side of the substrate silicon wafer is subjected to metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment in sequence to obtain a silicon wafer to be laminated; The silicon wafer to be film-mounted is subjected to film-mounting, corrosion and metal evaporation treatments in sequence to obtain a silicon-based resistor matching the resistor.

2. The method for manufacturing a silicon-based resistor according to claim 1, characterized in that: The resistor substrate is sequentially cleaned and oxidized to obtain an oxidized substrate, comprising: Using a cleaning liquid to clean the resistor substrate at a first temperature and for a first time to obtain a first substrate; The first substrate is cleaned with clean water for a second time and then dried to obtain a second substrate; The second substrate is oxidized by an oxidation process to obtain an oxidized substrate.

3. The method for manufacturing a silicon-based resistor according to claim 2, characterized in that: The oxidation process comprises: placing the second substrate in a sealed quartz boat, and inputting nitrogen gas at a first speed for a third time on the quartz boat at a second temperature to obtain a first oxidation stage; In the first oxidation stage, the temperature of the quartz boat is increased to a third temperature, the nitrogen gas input to the quartz boat is stopped, and the oxygen gas input to the quartz boat is switched to a fourth time, thereby obtaining a second oxidation stage; In the second oxidation stage, oxygen is input into the quartz boat at a first rate and hydrogen is input into the quartz boat at a second rate at the same time and hydrogen-oxygen synthesis is performed for a fifth time, thereby obtaining a third oxidation stage; In the third oxidation stage, oxygen is input into the quartz boat at the first rate and for a sixth time, thereby obtaining a fourth oxidation stage; In the fourth oxidation stage, trichloroethane is input into the quartz boat at a third rate and a seventh time to obtain a fifth oxidation stage; In the fifth oxidation stage, dry oxygen is input into the quartz boat for an eighth time and the temperature of the quartz boat is reduced from the third temperature to the second temperature to obtain the oxidized substrate.

4. The method for manufacturing a silicon-based resistor according to claim 1, characterized in that: The oxidized substrate is subjected to photolithography, boron implantation and cleaning treatments in sequence to obtain a substrate silicon wafer, comprising: The oxide layer of the oxide substrate is subjected to sequential treatments of coating, pre-baking, alignment, development, fixing, film hardening, oxide layer etching and degumming to obtain a photolithography substrate; implanting boron into the photolithography substrate at a first dose and a first energy to obtain a third substrate; The third substrate is cleaned for a first time using a cleaning solution at a first temperature and for a first time, and then cleaned for a second time using clean water to obtain a substrate silicon wafer.

5. The method for manufacturing a silicon-based resistor according to claim 1, characterized in that: The front side of the substrate silicon wafer is subjected to metal evaporation, metal photolithography, metal corrosion, metal degumming and alloy treatment in sequence to obtain a silicon wafer to be laminated, comprising: Performing evaporation treatment on the front metal titanium and aluminum of the substrate silicon wafer to obtain a first silicon wafer; The first silicon wafer is sequentially subjected to glue coating, pre-baking, alignment, development, fixing and film hardening treatments to obtain a second silicon wafer; The second silicon wafer is sequentially subjected to front metal aluminum etching, metal titanium etching and wafer surface treatment using EDTA etching solution to obtain a third silicon wafer; The front metal of the third silicon wafer is processed by a degumming process to obtain a fourth silicon wafer; The metal layer of the fourth silicon wafer is synthesized using a fourth temperature and alloying time to obtain a silicon wafer to be laminated.

6. The method for manufacturing a silicon-based resistor according to claim 5, characterized in that: include: Obtain the EDTA etching solution, wherein the content of obtaining the EDTA etching solution includes: 131 g of ethylenediaminetetraacetic acid was placed in a beaker, and 1000 ml of deionized water was injected into the beaker and stirred to obtain an EDTA emulsion; Add 280 ml of ammonia water into the EDTA emulsion in the beaker and stir to obtain an EDTA mixed solution; 3000 ml of hydrogen peroxide and 6000 ml of deionized water were sequentially injected into the EDTA mixed solution in the beaker and stirred to obtain the EDTA etching solution.

7. The method for manufacturing a silicon-based resistor according to claim 5, characterized in that: The degumming process comprises: Obtain a first degumming cylinder and a second degumming cylinder with stripping liquid that meet the temperature requirements, obtain a third degumming cylinder with methanol liquid, and obtain a fourth degumming cylinder and a fifth degumming cylinder with isopropanol liquid; placing the third silicon wafer into the first debonding tank for debonding for a second time to obtain a first debonded silicon wafer; placing the first debonded silicon wafer into the second debonding tank for rinsing for a ninth time to obtain a second debonded silicon wafer; placing the second debonded silicon wafer into the fourth debonding tank for rinsing for a tenth time to obtain a third debonded silicon wafer; placing the third debonded silicon wafer into the fifth debonding tank and rinsing it for the tenth time to obtain a fourth debonded silicon wafer; placing the fourth debonded silicon wafer into the third debonding tank and rinsing it for the tenth time to obtain a fifth debonded silicon wafer; Putting the fifth debonded silicon wafer into a three-stage flushing tank for flushing to obtain a sixth debonded silicon wafer; The sixth debonded silicon wafer is subjected to spin drying treatment using a spin dryer to obtain a fourth silicon wafer.

8. The method for manufacturing a silicon-based resistor according to claim 1, characterized in that: The silicon wafer to be film-mounted is subjected to film-mounting, corrosion and metal evaporation treatments in sequence to obtain a silicon-based resistor matching the resistor, including: After laminating the front side of the silicon wafer to be laminarized, a laminarized silicon wafer is obtained; The back metal of the film-attached silicon wafer is corroded by an etching process to obtain a silicon wafer to be evaporated; The back metal of the silicon wafer to be evaporated is subjected to metal titanium, metal nickel and metal silver evaporation treatment in sequence to obtain a silicon-based resistor matching the resistor.

9. The method for manufacturing a silicon-based resistor according to claim 8, characterized in that: The corrosion process includes: The back metal of the film-attached silicon wafer is subjected to etching treatment using a stress relief etching solution for a twelfth time and a first etching temperature to obtain a first etching silicon wafer; The first etched silicon wafer is etched with a decontamination etchant for a thirteenth time and a second etch temperature to obtain a second etched silicon wafer; The second etched silicon wafer is etched with a buffered oxide etchant for a fourteenth time and at a third etching temperature to obtain the silicon wafer to be evaporated.

10. A silicon-based resistor manufactured by the method for manufacturing a silicon-based resistor according to any one of claims 1 to 9, characterized in that: The invention comprises a silicon-based layer, a first metal layer located above the silicon-based layer and a second metal layer located below the silicon-based layer.

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