Chemical mechanical planarization method and chemical mechanical planarization device

Through the two-stage chemical mechanical planarization method, the problem of excessive polishing of metal in the trench in the prior art is solved, and the precise removal of the sacrificial layer is achieved and the electrical reliability of the device is improved.

CN119635520APending Publication Date: 2025-03-18BEIJING SEMICORE MICROELECTRONICS EQUIPMENT CO LTD
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Patent Information

Application Number
CN202411587922.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-07
Publication Date
2025-03-18

AI Technical Summary

Technical Problem

As the polishing time increases, the existing chemical mechanical planarization process causes the metal in the groove to be over-polished and depressions appear, affecting the electrical reliability of the device.

Method used

Using a two-stage chemical mechanical planarization method, the thickness of the sacrificial layer is first reduced to a second preset value through the first process parameter, and then further reduced to zero by the second process parameter, ensuring that the polishing head stops polishing when the sacrificial layer thickness is reduced to zero, avoiding excessive polishing.

Benefits of technology

The excessive polishing and recessing of the sacrificial layer in the trench is effectively avoided, and the electrical reliability of the device is improved.

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Abstract

The invention relates to the technical field of semiconductor manufacturing, and discloses a chemical mechanical planarization method and a chemical mechanical planarization device.The chemical mechanical planarization method comprises the steps that a to-be-planarized structure is provided, the to-be-planarized structure comprises a substrate layer and a sacrificial layer, a groove is formed in the substrate layer, the sacrificial layer is located on the surface of one side of the substrate layer, and the sacrificial layer is located on the surface of the other side of the substrate layer; the sacrificial layer fills the groove; performing a chemical mechanical planarization step on the surface of one side, deviating from the substrate layer, of the sacrificial layer according to the first process parameter; performing a chemical mechanical planarization step on the surface of one side, deviating from the substrate layer, of the sacrificial layer according to a second process parameter; and when the thickness of any area of the sacrificial layer located on the substrate layer is reduced to zero, the polishing head sets the pressure value applied to the corresponding area of the sacrificial layer to be zero. And when the thickness of any area of the sacrificial layer located on the substrate layer is reduced to zero, the polishing head sets the pressure value applied to the corresponding area of the sacrificial layer to be zero, and the situation that the polishing head continues to polish the area is avoided.
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