Semiconductor process chamber and semiconductor process equipment

Abstract

The utility model discloses a semiconductor process chamber and semiconductor process equipment, and belongs to the technical field of semiconductors. The semiconductor process chamber comprises a chamber body, a magnetic field adjusting mechanism and a guiding piece, a base is arranged in the chamber body, the magnetic field adjusting mechanism comprises a bearing piece and a plurality of magnetic pieces, the bearing piece is rotatably arranged outside the chamber body, the magnetic pieces are arranged around the chamber body, the bearing piece bears the magnetic pieces, and the guiding piece is arranged on the base. The bearing part can drive the multiple magnetic parts to rotate around a first axis, the first axis intersects with the bearing face of the base, the guiding part extends in the direction surrounding the first axis, and the guiding part is in guiding fit with the bearing part. The semiconductor process equipment comprises the semiconductor process chamber. Therefore, the magnetic field finally presented by the plurality of magnetic pieces is a more uniform annular area, so that the magnetic field in the cavity body is more uniform, the sputtering uniformity of a target material is improved, the uniformity of a film formed on a wafer is improved, and the eccentric phenomenon is effectively eliminated.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a semiconductor process chamber and semiconductor process equipment. Background Art

[0002] In the field of semiconductor technology, physical vapor deposition technology is usually used to deposit a thin film on the surface of a wafer. Specifically, charged particles in a plasma are used to bombard a target material, causing the target material to sputter onto the surface of the wafer, thereby forming a thin film. However, since the sputtering direction of the charged particles is random, the direction in which the target material sputters onto the wafer is also random, resulting in uneven thickness of the formed film.

[0003] In order to make the film formed on the wafer after the charged particles hit the target material more uniform, it is necessary to introduce a magnetic field adjustment mechanism, which controls the distribution of the charged particles by adjusting the magnetic field distribution in the semiconductor chamber. However, since the magnetic field generated by the stationary magnetic part will be offset in a certain direction, the magnetic part can only move in one direction, which can only improve the distribution of the magnetic field to a certain extent, and the degree of optimization of the uniformity of the formed film is limited. Utility Model Content

[0004] The purpose of the embodiments of the present application is to provide a semiconductor process chamber and semiconductor process equipment, which can solve the problem of poor uniformity of the thin film formed on the wafer in the related art.

[0005] In a first aspect, an embodiment of the present application provides a semiconductor process chamber, comprising a chamber body, a magnetic field adjustment mechanism and a guide member, wherein a base is provided in the chamber body, and the magnetic field adjustment mechanism comprises a bearing member and a plurality of magnetic members, wherein the bearing member is rotatably arranged outside the chamber body, the plurality of magnetic members are arranged around the chamber body, and the bearing member carries the plurality of magnetic members, and the bearing member can drive the plurality of magnetic members to rotate around a first axis, and the first axis intersects with a bearing surface of the base;

[0006] The guide member extends along a direction surrounding the first axis, and the guide member is in guiding cooperation with the supporting member.

[0007] In a second aspect, an embodiment of the present application further provides a semiconductor process equipment, including the above-mentioned semiconductor process chamber.

[0008] In the embodiment of the present application, since the magnetic field generated by the magnetic part in a stationary state will be offset in a certain direction, the magnetic fields generated by multiple magnetic parts in a stationary state will be offset in different directions respectively, and the supporting part can drive the multiple magnetic parts to rotate directly around the first axis. During the rotation of each magnetic part, the magnetic field generated by each magnetic part changes in a certain direction relative to the base due to the rotation. In other words, the magnetic field offset in a certain direction by each magnetic part will also change around the first axis, so that the magnetic field finally presented by the multiple magnetic parts is a more uniform annular area, and the guide member cooperates with the supporting member guide to avoid the rotation path of the supporting member from being offset, so that the magnetic field in the chamber body is more uniform, which is beneficial to improve the sputtering uniformity of the target material to the wafer, improve the uniformity of the thin film formed on the wafer, and effectively eliminate the eccentricity phenomenon. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 is a schematic structural diagram of a semiconductor process chamber disclosed in an embodiment of the present application;

[0010] Figure 2 is a partial schematic diagram of a semiconductor process chamber disclosed in an embodiment of the present application;

[0011] Figure 3 is a top view of the carrier and the magnetic member disclosed in the embodiment of the present application;

[0012] Figure 4 is a schematic diagram of the magnetic field generated by multiple magnetic parts when the magnetic parts are in a stationary state disclosed in the embodiment of the present application;

[0013] Figure 5 is a schematic diagram of magnetic fields generated by multiple magnetic parts when the magnetic parts rotate at different angles disclosed in an embodiment of the present application;

[0014] Figure 6 It is a schematic diagram of the magnetic field generated by multiple magnetic parts during the rotation of the magnetic parts disclosed in the embodiment of the present application.

[0015] Description of reference numerals:

[0016] 100-chamber body, 110-base, 111-wafer,

[0017] 200-carrying member, 210-first annular groove, 220-second annular groove, 230-annular groove,

[0018] 300-magnetic parts, 310-ring mounting bracket,

[0019] 400-first rotary drive mechanism, 410-first drive source, 411-housing, 412-output shaft, 420-first transmission gear, 430-second transmission gear,

[0020] 510-guide rail, 520-guide rail support,

[0021] 600-Magnetron assembly,

[0022] 700-target,

[0023] 800-second rotary drive mechanism, 810-second drive source, 820-rotating shaft,

[0024] 900-RF power supply,

[0025] a-First axis. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present application to clearly describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by ordinary technicians in this field based on the embodiments in the present application belong to the scope of protection of this application.

[0027] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0028] In the related art, a semiconductor chamber includes a chamber body, and a magnetic field regulating mechanism includes a plurality of magnetic parts, and the plurality of magnetic parts are arranged around the chamber body, and each magnetic part can move relative to the chamber body, thereby changing the position of the magnetic field generated by itself relative to the chamber body, and finally adjusting the position of the magnetic part to flexibly adjust the magnetic field applied to the chamber body by the entire magnetic field regulating mechanism. However, since the magnetic field generated by the magnetic part in a stationary state will be offset in a certain direction, the magnetic part can only move in one direction, and can only improve the distribution of the magnetic field to a certain extent, and the degree of optimization of the uniformity of the formed thin film is limited. Based on this, an embodiment of the present application provides a semiconductor process chamber and semiconductor process equipment to solve the above problems.

[0029] The semiconductor process chamber and semiconductor process equipment provided in the embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0030] Please refer to Figure 1-Figure 6 The semiconductor process chamber disclosed in the embodiment of the present application includes a chamber body 100 and a magnetic field adjustment mechanism. The chamber body 100 is the main component of the semiconductor process chamber. A base 110 is provided in the chamber body 100. The base 110 is used to support a wafer 111 and perform a semiconductor process on the wafer 111, such as a thin film deposition process.

[0031] Optionally, the semiconductor process chamber further includes a chuck, which is disposed on the upper surface of the base 110, and is used to support and adsorb the wafer 111. The chuck has adsorption and temperature control functions, which is conducive to the wafer 111 falling stably on the base 110. Further optionally, the chuck can be an electrostatic chuck.

[0032] At the same time, the chamber body 100 can provide a mounting base for at least some of the other components of the semiconductor process chamber. The magnetic field adjustment mechanism is mounted on the chamber body 100. In the embodiment of the present application, the magnetic field adjustment mechanism can be used to adjust the magnetic field applied to the chamber body 100, thereby changing the magnetic field distribution, so that the magnetic field in the chamber body 100 can match the process conditions for the wafer 111.

[0033] refer to Figure 1-Figure 3 As shown, the magnetic field adjustment mechanism includes a carrier 200 and a plurality of magnetic members 300. Each magnetic member 300 can generate a magnetic field. Optionally, the magnetic member 300 can be a permanent magnet or an electromagnet, or a member formed by combining a permanent magnet and an electromagnet. The plurality of magnetic members 300 are arranged around the chamber body 100. Optionally, the number of the magnetic members 300 can be 10-40. Further, as Figure 3 As shown, the number of magnetic members 300 is 18; the plurality of magnetic members 300 are evenly distributed along a direction surrounding the chamber body 100 .

[0034] The carrier 200 provides a mounting base for each magnetic member 300. The carrier 200 carries multiple magnetic members 300. The carrier 200 can be fixedly connected to each magnetic member 300. Optionally, the carrier 200 can be fixedly connected to the magnetic member 300 by welding or other methods. The carrier 200 and the multiple magnetic members 300 are both located outside the chamber body 100. The carrier 200 is rotatably disposed on the chamber body 100. Moreover, the carrier 200 can drive the multiple magnetic members 300 to rotate around the first axis a, and the first axis a intersects with the bearing surface of the base 110.

[0035] Optionally, the carrier 200 can be an annular carrier or an arc-shaped carrier. Of course, the carrier 200 can also be other shapes as long as it can stably support each magnetic member 300. An annular groove can be provided on the outer wall of the chamber body 100, and the axis of the annular groove is the first axis a. A part of the carrier 200 can extend into the annular groove, or the carrier 200 is provided with a matching protrusion, which extends into the annular groove. The matching protrusion can move along the extension direction of the annular groove, thereby rotating relative to the chamber body 100. Of course, the chamber body 100 and the carrier 200 can also be rotatably connected through other structures.

[0036] As described above, since the magnetic field generated by the stationary magnetic component 300 will be offset in a certain direction, the magnetic fields generated by the multiple stationary magnetic components 300 will be offset in different directions respectively, and the carrier 200 can drive the multiple magnetic components 300 to rotate directly around the first axis a. During the rotation of each magnetic component 300, the magnetic field generated by each magnetic component 300 changes in a certain direction relative to the base 110 due to the rotation. In other words, the magnetic field offset in a certain direction by each magnetic component 300 will also change around the first axis a, so that the magnetic field finally presented by the multiple magnetic components 300 is a more uniform annular area, and the magnetic field in the chamber body 100 is more uniform, which can increase the residence time of charged particles in the magnetic field and improve the ionization rate of the process gas in the chamber body 100. At the same time, it is beneficial to control the movement direction of the charged particles, and then it is beneficial to improve the sputtering uniformity of the target material 700 on the wafer 111, improve the uniformity of the thin film formed on the wafer 111, and effectively eliminate the eccentricity phenomenon.

[0037] The semiconductor process chamber also includes a guide member, which extends in a direction around the first axis a, and the guide member is guided and matched with the carrier 200. Optionally, the guide member can be an arc-shaped structure, the guide member is provided with an arc-shaped groove, the arc-shaped groove extends in a direction around the first axis a, and the carrier 200 is provided with a guide block in an annular structure, the guide block extends into the arc-shaped groove, and slides with the arc-shaped groove; or, the guide member can be an annular structure, the guide member is provided with an annular groove, the axis of the annular groove is colinear with the first axis a, the carrier 200 is provided with a guide block, the guide block extends into the annular groove, and slides with the annular groove, so that the guide member guides the movement direction of the carrier 200. Of course, the guide member can also be other structures, and the embodiment of the present application does not limit the specific structure of the guide member, and it is sufficient to guide the carrier 200.

[0038] In this way, by adding a guide member, the movement direction of the carrier 200 can be guided, which is beneficial for the carrier 200 and the magnetic member 300 it carries to accurately rotate around the first axis a, and avoid deviation of the rotation path of the carrier 200.

[0039] In an optional embodiment, if Figure 1 As shown, the first axis a is perpendicular to the bearing surface of the base 110. Specifically, the bearing surface of the base 110 is used to bear the wafer 111, and the upper surface of the wafer 111 is parallel to the bearing surface of the base 110, so the upper surface of the wafer 111 is perpendicular to the first axis a, and the bearing member 200 drives the plurality of magnetic members 300 to rotate around the first axis a, and the finally presented annular magnetic field region also takes the first axis a as the axis, therefore, the magnetic field region formed by the magnetic field regulating mechanism in this embodiment is more uniform in the direction parallel to the upper surface of the wafer 111, which is beneficial to further improve the sputtering uniformity, is beneficial to further improve the thin film uniformity, and effectively eliminates the eccentricity phenomenon.

[0040] When each magnetic member 300 is in a stationary state, the magnetic field region formed by each magnetic member 300 is referenced Figure 4 As shown in FIG. 1 , the magnetic field region is similar to an elliptical region, and the magnetic field will deviate in a certain direction, that is, in the direction where the long axis of the elliptical region is located, thereby causing the formed film to be eccentric; when each magnetic member 300 rotates 30°, 60°, 90°, 120°, 150° and 180° around the first axis a, the effect diagram after superposition of the magnetic fields formed by each magnetic member 300 at these six positions is shown in FIG. Figure 5 As shown, Figure 4 Compared with the conventional magnetic field, the magnetic field deviation phenomenon is improved; when the rotation speed of the bearing member 200 is relatively high, the magnetic field area effect diagram formed by each magnetic member 300 is shown in FIG. Figure 6 As shown, the offset phenomenon of the magnetic field is further improved, and the magnetic field formed by each magnetic member 300 is a circular magnetic field region, the outer diameter of the circular magnetic field region is equal to the length of the major axis of the aforementioned elliptical region, the inner diameter of the circular magnetic field region is equal to the length of the minor axis of the aforementioned elliptical region, the wafer 111 is collinear with the axis of the circular magnetic field region, and the magnetic field around the wafer 111 is more uniform.

[0041] In other embodiments, the first axis a may intersect with the bearing surface of the base 110 but not be perpendicular thereto.

[0042] In an optional embodiment, the magnetic field adjustment mechanism further includes a first rotation drive mechanism 400, which is used as a drive mechanism for driving the carrier 200 to rotate. The first rotation drive mechanism 400 is disposed outside the chamber body 100, and the first rotation drive mechanism 400 is connected to the carrier 200 to drive the carrier 200 to drive the plurality of magnetic members 300 to rotate around the first axis a. In actual application, the first rotation drive mechanism 400 can change the rotation speed of the carrier 200 according to the deposition time of the wafer 111.

[0043] According to this embodiment, a first rotating drive mechanism 400 is added to directly drive the carrier 200 to rotate without the need for external force or external drive mechanism to drive the carrier 200 to rotate, so that the magnetic field adjustment mechanism itself can adjust the magnetic field uniformity, and the adjustment process is simpler.

[0044] In other embodiments, the magnetic field adjustment mechanism may not be provided with the first rotation driving mechanism 400 , and the magnetic field adjustment mechanism utilizes an external force or an external driving mechanism to drive the supporting member 200 to rotate.

[0045] In an optional embodiment, the first rotation drive mechanism 400 includes a first drive source 410, a first transmission gear 420, and a second transmission gear 430. The first drive source 410 can be a drive source that provides rotational power for a motor, a pneumatic motor, etc. The first transmission gear 420 is sleeved on the outside of the output shaft 412 of the first drive source 410. In this way, when the first drive source 410 is working, the output shaft 412 of the first drive source 410 rotates and drives the first transmission gear 420 to rotate. Specifically, the first drive source 410 includes a connected housing 411 and an output shaft 412, and the housing 411 is connected to the outer wall of the chamber body 100. Optionally, the housing 411 and the outer wall of the chamber body 100 can be fixedly connected by welding or the like.

[0046] The second transmission gear 430 is sleeved on the outside of the chamber body 100, and the first transmission gear 420 is meshed with the second transmission gear 430. In this way, when the first transmission gear 420 rotates, the second transmission gear 430 is driven to rotate, and the bearing member 200 is connected to the second transmission gear 430, so when the second transmission gear 430 rotates, the bearing member 200 is further driven to rotate, so that the bearing member 200 drives the plurality of magnetic members 300 to rotate relative to the chamber body 100.

[0047] Since the first driving source 410 is located outside the chamber body 100, the first driving source 410 is far away from the first axis a, and the output shaft 412 of the first driving source 410 cannot directly drive the carrier 200 to rotate. Therefore, the transmission direction of the rotational power is changed through the first transmission gear 420 and the second transmission gear 430 to ensure that the first driving source 410 smoothly drives the carrier 200 to rotate.

[0048] Of course, in other embodiments, the first rotation driving mechanism 400 may adopt other power transmission structures to transmit the rotational power of the first driving source 410 .

[0049] In an alternative embodiment, reference Figure 2As shown, the axis of the first transmission gear 420 is parallel to the axis of the second transmission gear 430, and the axes of the two are parallel to the output shaft 412. At this time, the first transmission gear 420 and the second transmission gear 430 can both be cylindrical gears. Since the tooth surface of the cylindrical gear is a cylindrical surface, during the transmission process, the meshing point of the first transmission gear 420 and the second transmission gear 430 always remains in the same position, and no sliding occurs, thereby reducing capacity loss.

[0050] With this embodiment, the first transmission gear 420 and the second transmission gear 430 can rotate directly in the same plane without changing the transmission direction of the rotational power, which is beneficial to improving the transmission efficiency.

[0051] Of course, in other embodiments, the axis of the first transmission gear 420 intersects with the axis of the second transmission gear 430. Optionally, both the first transmission gear 420 and the second transmission gear 430 may be bevel gears, and the axis of the first transmission gear 420 may be perpendicular to the axis of the second transmission gear 430.

[0052] In an optional embodiment, the number of the first driving source 410 and the number of the transmission gear are both one.

[0053] In another embodiment, reference Figure 1 As shown, the number of the first driving sources 410 and the first transmission gears 420 is at least two, and the first driving sources 410 and the first transmission gears 420 correspond to each other one by one. Each of the first driving sources 410 and each of the first transmission gears 420 is arranged at intervals along the direction around the first axis a, and each of the first transmission gears 420 is respectively meshed with the second transmission gear 430. Optionally, the number of the first driving sources 410 and the first transmission gears 420 can be two, and the two first driving sources 410 and the two transmission gears are respectively located on opposite sides of the chamber body 100. Of course, the number of the first driving sources 410 and the first transmission gears 420 can be more than three, and each of the first driving sources 410 and each of the first transmission gears 420 can be evenly distributed along the direction around the first axis a.

[0054] With this embodiment, the number of first drive sources 410 and first transmission gears 420 is increased, and the total driving power provided by the first drive source 410 is increased, which is more conducive to the second transmission gear 430 driving the carrier 200 and the magnetic member 300 to rotate. Moreover, each first drive source 410 and each first transmission gear 420 is distributed at different positions of the second transmission gear 430 along its own circumference. Each first drive source 410 drives the second transmission gear 430 to rotate from a different position, which is more conducive to the overall stable rotation of the second transmission gear 430.

[0055] In an alternative embodiment, reference Figure 2As shown, the guide member includes a guide rail 510, and the magnetic field adjustment mechanism also includes a guide rail supporting member 520. The guide rail 510 and the guide rail supporting member 520 are both arranged outside the chamber body 100, and the guide rail supporting member 520 is connected to the outer wall of the chamber body 100. Optionally, the guide rail supporting member 520 and the outer wall surface of the chamber body 100 can be fixedly connected by welding or the like; the guide rail supporting member 520 supports the guide rail 510, and the guide rail 510 is fixedly connected to the guide rail supporting member 520. Optionally, the guide rail supporting member 520 and the guide rail 510 can also be fixedly connected by welding or the like; the guide rail 510 extends in a direction around the first axis a, and the guide rail 510 is slidably connected to the carrier 200.

[0056] Optionally, the guide rail 510 can be an annular guide rail or an arc-shaped guide rail; the guide rail supporting member 520 can be an annular supporting member or an arc-shaped supporting member, as long as it can support the guide rail 510. The embodiment of the present application does not impose specific restrictions on the structure of the guide rail 510 and the guide rail supporting member 520.

[0057] By adopting this embodiment, the guide rail 510 is conveniently set up by setting the guide rail support member 520, thereby improving the setting stability of the guide member, and then using the guide rail 510 to guide the rotation path of the carrier 200, which is beneficial for the carrier 200 to accurately rotate around the first axis a and avoid deviation of the rotation path of the carrier 200.

[0058] In an optional embodiment, the bearing member 200 is an annular bearing member, which is sleeved on the outside of the chamber body 100, the inner wall of the annular bearing member is provided with a first annular groove 210, the groove wall of the first annular groove 210 is provided with a second annular groove 220, the first annular groove 210 is connected with the second annular groove 220, the guide rail support member 520 extends into the first annular groove 210, and the guide rail 510 extends into the second annular groove 220. With this embodiment, the guide rail 510 and the guide rail support member 520 respectively provide rotation support for the annular bearing member, increase the total matching area between the guide rail 510 and the guide rail support member 520 and the annular bearing member, and facilitate more stable rotation of the annular bearing member.

[0059] Of course, in other embodiments, the guide rail 510 and the guide rail support 520 may be disposed below the annular support, the annular support may not be provided with the first annular groove 210 and the second annular groove 220, and only the guide rail 510 may be slidably matched with the annular support.

[0060] In an alternative embodiment, reference Figure 2As shown, the annular bearing has an inner side wall and an outer side wall facing each other, and the first annular groove 210 and the second annular groove 220 are arranged on the inner side wall, so that the annular bearing can be directly sleeved on the outside of the chamber body 100, and the guide rail support member 520 directly faces the outer wall of the chamber body 100, which facilitates the connection between the guide rail support member 520 and the outer wall of the chamber body 100. Optionally, the second annular groove 220 is opened at the top of the first annular groove 210, and the lower end of the first annular groove 210 is open, which facilitates the guide rail support member 520 to directly extend from the bottom of the bearing 200 into the first annular groove 210, and is conducive to simplifying the structure of the bearing 200 and simplifying the process.

[0061] The outer wall of the annular carrier is provided with an annular groove 230. The semiconductor process chamber further comprises an annular mounting frame 310. Figure 3 As shown, a plurality of magnetic members 300 are arranged at intervals on the annular mounting frame 310. Optionally, the magnetic member 300 can be fixed to the annular mounting frame 310 by bonding or the like. Moreover, the annular mounting frame 310 is sleeved on the outside of the annular bearing member so that the annular mounting frame 310 extends into the annular slot 230, and the annular mounting frame 310 and the plurality of magnetic members 300 together form a magnetic group. Optionally, the distance between the magnetic member 300 and the outer wall of the chamber body 100 is 3cm-10cm to avoid the magnetic member 300 colliding with the chamber body 100 during movement due to the distance being too close. In this way, when setting the magnetic member 300, the plurality of magnetic members 300 are first arranged on the annular mounting frame 310 in sequence, and then the annular mounting frame 310 is directly sleeved on the outside of the bearing member 200 so that each magnetic member 300 directly extends into the annular slot 230, which facilitates the installation of each magnetic member 300.

[0062] Moreover, the height of the annular groove 230 is greater than the height of the first annular groove 210, that is, the annular groove 230 and the first annular groove 210 are staggered in the horizontal direction (that is, the radial direction of the annular bearing member). In this way, the first annular groove 210 and the annular groove 230 are not provided at the same level, which makes the thickness of the annular bearing member smaller, thereby avoiding affecting the bearing stability of the annular bearing member.

[0063] Of course, in other embodiments, the annular groove 230 may also be disposed on the inner wall of the annular carrier, or between the inner wall and the outer wall, and each magnetic member 300 may be individually disposed in the annular groove 230 .

[0064] like Figure 1As shown, the semiconductor process chamber disclosed in the embodiment of the present application further includes a magnetron assembly 600 and a target material 700. The material of the target material 700 may be pure metal or alloy capable of sputtering, such as copper, aluminum or tantalum. In the present embodiment, the material of the target material 700 is copper. The target material 700 is arranged at the top of the chamber body 100, the magnetron assembly 600 is located above the target material 700, and the magnetron assembly 600 and the target material 700 are both located above the base 110. Optionally, the magnetron assembly 600 is located outside the chamber body 100. The magnetron assembly 600 includes a plurality of magnetrons. In a specific sputtering process, the magnetron assembly 600 ionizes the process gas in the chamber body 100 to form charged particles, which bombard the target material 700 to form target material particles, which can be sputtered to the surface of the wafer 111, and finally form a deposition layer (i.e., a thin film) to meet the process requirements.

[0065] Optionally, the target 700 is connected to a DC power supply, and the base 110 is connected to an RF power supply 900. Specifically, under the action of the electric field force generated by the DC power supply, the charged particles will bombard the target 700; under the action of the electric field force of the RF power supply 900, the target particles will move toward the base 110, thereby sputtering to the surface of the wafer 111.

[0066] In a further optional embodiment, if Figure 1 As shown, the semiconductor process chamber also includes a second rotation drive mechanism 800, which is connected to the magnetron assembly 600 to drive the magnetron assembly 600 to rotate. Optionally, the second rotation mechanism includes a second driving source 810 and a rotating shaft 820. The second driving source 810 can be a driving source that can generate rotational power, such as a motor or a pneumatic motor. The second driving source 810 is located outside the chamber body 100, and one end of the rotating shaft 820 is connected to the output shaft of the second driving source 810. The other end of the rotating shaft 820 passes through the cavity wall of the chamber body 100 and is connected to the magnetron assembly 600. When the second driving source 810 is working, the rotating shaft 820 drives the magnetron assembly 600 to rotate. Optionally, the rotation axis of the magnetron assembly 600 is colinear with the first axis a.

[0067] In this embodiment, the second rotation drive mechanism 800 is used to drive the magnetron assembly 600 to rotate. The charged particles formed by ionization of the magnetron assembly 600 bombard the target material 700 at different positions, so that target particles are generated at different positions of the target material 700 and sputtered to the surface of the wafer 111, which is beneficial to improving the sputtering uniformity, and further beneficial to improving the uniformity of the formed thin film.

[0068] Based on the semiconductor process chamber disclosed in the present application, the present application also discloses a semiconductor process equipment, which includes the semiconductor process chamber in the above embodiment. In this way, the semiconductor process chamber of the semiconductor process equipment is equipped with a magnetic field adjustment mechanism, so that the magnetic field in the chamber body 100 is more uniform, and the eccentricity phenomenon is effectively eliminated, which is conducive to improving the sputtering uniformity of the target material 700 on the wafer 111, improving the uniformity of the thin film formed on the wafer 111, and thus improving the process effect.

[0069] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A semiconductor process chamber, characterized in that: The invention comprises a chamber body (100), a magnetic field adjustment mechanism and a guide member, wherein a base (110) is provided in the chamber body (100), and the magnetic field adjustment mechanism comprises a bearing member (200) and a plurality of magnetic members (300), wherein the bearing member (200) is rotatably arranged outside the chamber body (100), the plurality of magnetic members (300) are arranged around the chamber body (100), and the bearing member (200) carries the plurality of magnetic members (300), and the bearing member (200) can drive the plurality of magnetic members (300) to rotate around a first axis (a), and the first axis (a) intersects with a bearing surface of the base (110); The guide member extends in a direction surrounding the first axis (a), and the guide member is in guiding cooperation with the supporting member (200).

2. The semiconductor process chamber according to claim 1, characterized in that: The magnetic field adjustment mechanism also includes a first rotation driving mechanism (400), which is arranged outside the chamber body (100), and the first rotation driving mechanism (400) is connected to the supporting member (200) to drive the supporting member (200) to drive the multiple magnetic members (300) to rotate around the first axis (a).

3. The semiconductor process chamber according to claim 2, characterized in that: The first rotating drive mechanism (400) includes a first driving source (410), a first transmission gear (420) and a second transmission gear (430), wherein the first transmission gear (420) is sleeved on the outside of an output shaft (412) of the first driving source (410), the second transmission gear (430) is sleeved on the outside of the chamber body (100), and the carrier (200) is connected to the second transmission gear (430), and the first transmission gear (420) is meshed with the second transmission gear (430).

4. The semiconductor process chamber according to claim 3, characterized in that: The axis of the first transmission gear (420) is parallel to the axis of the second transmission gear (430).

5. The semiconductor process chamber according to claim 3, characterized in that: The number of the first driving sources (410) and the first transmission gears (420) is at least two, and the first driving sources (410) correspond to the first transmission gears (420) one by one. The first driving sources (410) and the first transmission gears (420) are respectively arranged at intervals along the direction around the first axis (a), and the first transmission gears (420) are respectively meshed with the second transmission gears (430).

6. The semiconductor process chamber according to claim 1, wherein: The guide member includes a guide rail (510), and the magnetic field adjustment mechanism also includes a guide rail supporting member (520). The guide rail (510) and the guide rail supporting member (520) are both arranged outside the chamber body (100), and the guide rail supporting member (520) supports the guide rail (510). The guide rail (510) extends in a direction around the first axis (a), and the guide rail (510) is slidably connected to the supporting member (200).

7. The semiconductor process chamber according to claim 6, characterized in that: The supporting member (200) is an annular supporting member, and the annular supporting member is sleeved on the outside of the chamber body (100). The inner wall of the annular supporting member is provided with a first annular groove (210), and the groove wall of the first annular groove (210) is provided with a second annular groove (220). The first annular groove (210) is connected to the second annular groove (220), and the guide rail supporting member (520) extends into the first annular groove (210), and the guide rail (510) extends into the second annular groove (220).

8. The semiconductor process chamber according to claim 7, characterized in that: The annular bearing member has an inner side wall and an outer side wall facing each other, the first annular groove (210) and the second annular groove (220) are arranged on the inner side wall, and the outer side wall is provided with an annular groove (230). The semiconductor process chamber further comprises an annular mounting frame (310), the plurality of magnetic members (300) are spaced apart on the annular mounting frame (310), and the annular mounting frame (310) is sleeved on the outside of the annular carrier so that the annular mounting frame (310) extends into the annular groove (230), and the height of the annular groove (230) is greater than the height of the first annular groove (210).

9. The semiconductor process chamber according to claim 1, wherein: The first axis (a) is perpendicular to the bearing surface of the base (110).

10. The semiconductor process chamber according to claim 1, wherein: The semiconductor process chamber further comprises a magnetron assembly (600), a target material (700) and a second rotation drive mechanism (800), wherein the target material (700) is arranged on the top of the chamber body (100), the magnetron assembly (600) is located above the target material (700), and both the magnetron assembly (600) and the target material (700) are located above the base (110), and the second rotation drive mechanism (800) is connected to the magnetron assembly (600) to drive the magnetron assembly (600) to rotate.

11. A semiconductor process equipment, characterized in that: A semiconductor process chamber comprising any one of claims 1-10.

Images