Single crystal furnace and furnace bottom heat preservation structure of single crystal furnace
By adopting a layered design of the furnace bottom insulation structure in the single crystal furnace and using a combination of hard and soft insulation components, the problems of poor mechanical performance and reduced thermal insulation performance of the furnace bottom insulation structure in the existing technology have been solved, and high-efficiency insulation has been achieved. The service life and good thermal insulation performance improve the production efficiency of silicon single crystal.
Patent Information
- Application Number
- CN202421196929.1
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- Filing Date
- 2024-05-29
- Publication Date
- 2025-01-21
- Estimated Expiration
- 2034-05-29
AI Technical Summary
The furnace bottom insulation structure of existing single crystal furnaces has poor mechanical properties and is prone to powdering, resulting in a degradation of insulation performance and affecting the use of single crystal furnaces.
The furnace bottom insulation structure adopts a layered design, in which the first and third layers use hard insulation components, and the second layer uses soft insulation components. This design improves the mechanical performance and thermal insulation performance.
It achieves a long service life and good insulation performance of the furnace bottom insulation structure, reduces the frequency of replacement, lowers the cost of use, and improves the production efficiency of silicon single crystal.
Smart Images
Figure CN222374835U_ABST
Abstract
Description
Technical Field
[0001] The utility model relates to the technical field of single crystal furnaces, in particular to a single crystal furnace and a furnace bottom insulation structure of the single crystal furnace. Background Art
[0002] A single crystal furnace, also known as a single crystal growth furnace, is a manufacturing equipment that uses the Czochralski method to produce silicon single crystals.
[0003] During actual production, the temperature inside the single crystal furnace is relatively high, usually above 1400°C. Therefore, it is necessary to set up a corresponding insulation structure in the single crystal furnace, especially a furnace bottom insulation structure, to achieve furnace insulation and reduce direct burnout of the furnace body. However, the furnace bottom insulation structure in the prior art has poor mechanical properties and is easily powderized during use, which leads to a significant decrease in insulation performance and affects the use of the single crystal furnace.
[0004] Therefore, how to provide a solution to overcome or alleviate the above-mentioned defects is still a technical problem that needs to be solved urgently by those skilled in the art. Utility Model Content
[0005] The purpose of the utility model is to provide a single crystal furnace and a furnace bottom insulation structure of the single crystal furnace, wherein the furnace bottom insulation structure can have a relatively long service life and at the same time, can have relatively good insulation performance.
[0006] In order to solve the above technical problems, the utility model provides a furnace bottom insulation structure of a single crystal furnace, which is arranged in the furnace body of the single crystal furnace and located at the bottom of the furnace body. The furnace bottom insulation structure includes a first layer, a second layer and a third layer. The first layer is located at the bottom, the second layer is located on the upper side of the first layer, and the third layer is located on the upper side of the second layer. The first layer adopts a hard insulation component, the second layer adopts a soft insulation component, and the third layer also adopts a hard insulation component.
[0007] In the embodiment of the utility model, the furnace bottom insulation structure adopts a layered design, wherein: the first layer located at the bottom adopts hard insulation components, which can provide better mechanical properties, thereby facilitating the installation of the furnace bottom insulation structure; the second layer located in the middle adopts soft insulation components, and the thermal conductivity of the soft insulation components is smaller than that of the hard insulation components. Therefore, the soft insulation components can provide relatively better insulation performance, thereby improving the insulation performance of the entire furnace bottom insulation structure; the third layer located on the uppermost side also adopts hard insulation components, because of their relatively good mechanical properties, they can have relatively good high-temperature stability, wear resistance and mechanical strength, etc. In actual applications, they are not easy to be damaged, and can also protect the second layer located in the middle, which can effectively delay the time for the second layer to be pulverized, which is beneficial to ensure the stability of the thermal field inside the furnace body, thereby reducing the fluctuation of the main power during the crystal pulling process, and can reduce the difficulty of crystal pulling, thereby ensuring the growth efficiency of silicon single crystals to a large extent.
[0008] Therefore, the furnace bottom insulation structure provided by the utility model can have a relatively long service life and relatively good insulation performance. In this way, the replacement frequency of the furnace bottom insulation structure can be greatly reduced, the use cost can be significantly reduced, and it is conducive to ensuring the continuity of production, thereby improving the production efficiency of silicon single crystals.
[0009] Optionally, the third layer includes a main body portion and an annular portion, the annular portion is detachably connected to the main body portion, and the annular portion is configured to be a heating element that can be installed in an outer sleeve in the single crystal furnace.
[0010] Optionally, the main body is provided with a groove-type or hole-type mounting portion, and the annular portion is arranged in the mounting portion.
[0011] Optionally, the third layer is also provided with avoidance holes.
[0012] Optionally, the third layer is also provided with exhaust holes.
[0013] Optionally, the thickness of the first layer is between 110 mm and 130 mm, and the thickness of the third layer is between 45 mm and 55 mm.
[0014] Optionally, the second layer includes a plurality of layers, and the layers are stacked.
[0015] Optionally, the thickness of the layer is between 8 mm and 12 mm.
[0016] Optionally, the soft thermal insulation component and the hard thermal insulation component are both carbon fiber felt.
[0017] The utility model provides a single crystal furnace, comprising a furnace body. The bottom of the furnace body is provided with a furnace bottom insulation structure, and the furnace bottom insulation structure is the furnace bottom insulation structure of the single crystal furnace. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] Figure 1 This is a simplified structural diagram of the single crystal furnace provided by the utility model;
[0019] Figure 2 This is a schematic diagram of the structure of the furnace bottom insulation structure of the single crystal furnace provided by the utility model;
[0020] Figure 3 for Figure 2 The structural diagram of the third layer;
[0021] Figure 4 for Figure 3 A partial exploded view of the .
[0022] The following are the descriptions of the reference numerals:
[0023] 100 furnace bottom insulation structure, 110 first layer, 120 second layer, 121 layered layer, 130 third layer, 131 main body, 131a mounting portion, 131b avoidance hole, 131c exhaust hole, 132 annular portion;
[0024] 200 furnace body. DETAILED DESCRIPTION
[0025] In order to enable those skilled in the art to better understand the technical solution of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific embodiments.
[0026] In the embodiments of the present invention, the terms "first", "second", and "third" are used only for descriptive purposes and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first", "second", and "third" may explicitly or implicitly include one or more of the features.
[0027] In the description of the embodiments of the present invention, it should be noted that, unless otherwise clearly stipulated and limited, the terms "installed", "connected" and "connected" should be understood in a broad sense. For example, "connection" can be a detachable connection or a non-detachable connection; it can be a direct connection or an indirect connection through an intermediate medium.
[0028] In the description of the embodiments of the present invention, the term "plurality" refers to two or more than two. Moreover, when "plurality" is used to express the number of different components, it does not indicate the relationship between the components in terms of quantity.
[0029] In the description of the embodiments of the present utility model, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.
[0030] Please refer to Figure 1 , Figure 1 The utility model provides a simplified structural diagram of the single crystal furnace.
[0031] like Figure 1 As shown, an embodiment of the utility model provides a single crystal furnace, which can also be called a single crystal growth furnace, and is a manufacturing equipment that can produce silicon single crystals by the Czochralski method.
[0032] Specifically, the single crystal furnace may include a furnace body 200, the interior of the furnace body 200 is used to form a cavity for producing silicon single crystals. In addition, the single crystal furnace may also be configured with a heating component to provide temperature support for the production of silicon single crystals.
[0033] Here, the embodiment of the utility model does not limit the specific structural form of the above-mentioned heating component. In practical applications, those skilled in the art can set it according to specific needs, as long as it can meet the requirements of use. For example, the heating component can be an electrode heater, including a plurality of electrode bodies. In actual work, when current passes through each electrode body, due to the existence of resistance, each electrode body can convert electrical energy into thermal energy and transfer the thermal energy to the surrounding environment to maintain the thermal field distribution in the furnace body 200; in some implementations, the electrode body can be columnar, so the electrode body can also be called an electrode column.
[0034] During the growth of silicon single crystals, the silicon material block needs to be heated to a very high temperature, and then the growth direction of the crystal in the molten silicon liquid is controlled by the temperature gradient. This requires that the thermal field inside the furnace body 200 must have good temperature distribution and stability to ensure that the silicon material can be fully melted and the growth direction of the crystal can be controlled. In addition, during the entire silicon single crystal growth process, the thermal field inside the furnace body 200 also needs to be stable and uniform to ensure the uniformity and quality of crystal growth.
[0035] Therefore, the insulation of the furnace body 200 is important. In the embodiment of the utility model, the internal insulation structure of the furnace body 200 includes at least a bottom insulation structure 100. In addition, it may also include a top insulation structure, an upper insulation structure, a middle insulation structure and a lower insulation structure, or a combination of one or more thereof.
[0036] In conventional solutions, the bottom insulation structure is mostly made of soft felt among carbon fiber felts. Soft felt is a soft insulation component with relatively poor mechanical properties. It is easy to powderize during long-term use, resulting in a serious decline in or even loss of the insulation performance of the bottom insulation structure. This will in turn cause large fluctuations in the main power during the crystal pulling process, increase the difficulty of the crystal pulling process, and seriously affect the use of the single crystal furnace and the preparation of silicon single crystals.
[0037] To solve this problem, the solution in the prior art is to constantly replace the soft felt to ensure the thermal insulation performance of the bottom thermal insulation structure.
[0038] However, the actual production situation is that the soft felt needs to be replaced in almost every furnace, which will greatly increase the cost of equipment use. In addition, after the soft felt is pulverized, the powder produced by the pulverization needs to be cleaned up, and it cannot be directly replaced, which will affect the continuous use of the single crystal furnace and further affect the continuous production of silicon single crystals. Therefore, the above-mentioned solution of constantly replacing the soft felt is not an effective solution.
[0039] In view of this, the applicant has conducted a lot of research and proposed a new furnace bottom insulation structure 100, which can have a relatively long service life and relatively good insulation performance. In this way, the replacement frequency of the furnace bottom insulation structure 100 can be greatly reduced, the use cost can be significantly reduced, and it is conducive to ensuring the continuity of production, thereby improving the production efficiency of silicon single crystals.
[0040] Specifically, please refer to Figure 2-Figure 4 , Figure 2 This is a schematic diagram of the structure of the furnace bottom insulation structure of the single crystal furnace provided by the utility model. Figure 3 for Figure 2 The structural diagram of the third layer. Figure 4 for Figure 3 A partial exploded view of the .
[0041] like Figure 2 As shown, the embodiment of the utility model provides a furnace bottom insulation structure 100 of a single crystal furnace, which is arranged in a furnace body 200 of the single crystal furnace and located at the bottom of the furnace body 200. The furnace bottom insulation structure 100 includes a first layer 110, a second layer 120 and a third layer 130. The first layer 110, the second layer 120 and the third layer 130 can be stacked; wherein the first layer 110 is located at the bottom, the second layer 120 is located on the upper side of the first layer 110, and the third layer 130 is located on the upper side of the second layer 120. The first layer 110 adopts a hard insulation component, the second layer 120 adopts a soft insulation component, and the third layer 130 also adopts a hard insulation component.
[0042] By adopting this scheme, the furnace bottom insulation structure 100 in the embodiment of the utility model adopts a layered design, wherein: the first layer 110 located at the bottom adopts a hard insulation component, which can provide better mechanical properties, so that the furnace bottom insulation structure 100 can be easily installed; the second layer 120 located in the middle adopts a soft insulation component, and the thermal conductivity of the soft insulation component is smaller than that of the hard insulation component. Therefore, the soft insulation component can provide relatively good insulation performance, thereby improving the insulation performance of the entire furnace bottom insulation structure 100; the third layer 130 located on the upper side also adopts a hard insulation component, because of its relatively good mechanical properties, it can have relatively good high temperature stability, wear resistance and mechanical strength, etc. In practical applications, it is not easy to be damaged, and the second layer 120 located in the middle can also be protected, which can effectively delay the time for the second layer 120 to be pulverized, which is beneficial to ensure the stability of the internal thermal field of the furnace body 200, thereby reducing the fluctuation of the main power during the crystal pulling process, and can reduce the difficulty of crystal pulling, thereby ensuring the growth efficiency of silicon single crystals to a large extent.
[0043] Here, the embodiments of the present invention do not limit the specific types of the soft thermal insulation components and the hard thermal insulation components. In practical applications, those skilled in the art can make selections according to specific needs, as long as they can meet the requirements of use.
[0044] In some optional implementations, the above-mentioned soft insulation components and hard insulation components can both be carbon fiber felt. The thermal conductivity of carbon fiber materials is relatively small, so they can have better thermal insulation performance. At the same time, they also have high compressive strength, high temperature resistance and oxidation resistance, and basically do not contain toxic and harmful substances, and are environmentally friendly.
[0045] In addition, in some other implementations of the embodiments of the utility model, the above-mentioned soft thermal insulation components and hard thermal insulation components can also be ceramic felt, alumina felt, silica felt, graphite felt, silicon carbide felt, etc.
[0046] In some optional implementations, such as Figure 3 and Figure 4 As shown, the third layer 130 may be a split structure, including a body 131 and an annular portion 132, wherein the annular portion 132 is detachably connected to the body 131. In practical applications, the annular portion 132 is configured to be a heating element that can be installed in a single crystal furnace, such as the aforementioned electrode body.
[0047] It should be known that when the equipment is running, the temperature of the heating element is very high, and accordingly, the components arranged close to the heating element will also face a greater risk of high-temperature corrosion. In view of this, the embodiment of the utility model chooses to set the above-mentioned third layer 130 as a split structure, so that a detachable annular portion 132 is provided on the third layer 130, and the annular portion 132 is in contact with the heating element. In this way, in actual application, once the annular portion 132 undergoes high-temperature corrosion, the annular portion 132 can be directly replaced without replacing the entire third layer 130, which can greatly reduce the use cost of the furnace bottom insulation structure 100 provided by the embodiment of the utility model.
[0048] Specifically, the main body 131 may be provided with a groove-type or hole-type mounting portion 131a, and the annular portion 132 may be provided in the mounting portion 131a. It should be noted that the groove-type here means that the mounting portion 131a is a non-through structure in the thickness direction of the main body 131. In some implementations, the mounting portion 131a of this non-through structure may also be referred to as a blind hole; the hole-type here means that the mounting portion 131a is a through structure in the thickness direction of the main body 131. In some implementations, the mounting portion 131a of this through structure may also be referred to as a through hole.
[0049] Here, the embodiment of the utility model does not limit the specific connection method between the annular portion 132 and the main body portion 131. In practical applications, those skilled in the art can choose according to specific needs, as long as it can meet the requirements of use. For example, the annular portion 132 and the main body portion 131 can be connected by threaded connection, clamping connection, interference fit connection, etc. It should be understood that a slight interference fit connection is also relatively easy to disassemble; or, when the mounting portion 131a is a groove-shaped design, the mounting portion 131a has a bottom wall, and the bottom wall can support the annular portion 132. Therefore, the annular portion 132 can also be directly placed in the mounting portion 131a without setting up other connection structures, and the entire structural form can be relatively simple.
[0050] The number of the annular portions 132 and the number of the heating elements may be consistent. Figure 2 and Figure 3 As shown, the number of the annular parts 132 may be four, and accordingly, the number of the heating elements may also be four, and each heating element may be inserted into each annular part 132 in a one-to-one correspondence.
[0051] In some optional implementations, the third layer 130 may also be provided with avoidance holes 131b, which may avoid structural parts such as lifting shafts. The number and shape of the avoidance holes 131b may be determined according to actual needs and are not explicitly limited here.
[0052] In some optional implementations, the third layer 130 may also be provided with exhaust holes 131c for exhaust. The number and shape of the exhaust holes 131c may be determined according to actual conditions and are not explicitly limited here.
[0053] In some optional implementations, the thickness of the third layer 130 may be between 45 mm and 55 mm, such as 50 mm, to provide good support and heat corrosion resistance, and to effectively protect the soft thermal insulation components underneath.
[0054] In some optional implementations, the second layer 120 may include a plurality of layers 121 , and each layer 121 may be stacked.
[0055] In this way, the thickness of the second layer 120 can be conveniently adjusted to better meet the use requirements. At the same time, for each layer 121, its thickness is less than the overall thickness of the second layer 120, so the preparation and acquisition of each layer 121 can also be relatively easy.
[0056] The thickness of the layer 121 may be between 8 mm and 12 mm, for example, 10 mm.
[0057] The number of layers 121 may be between 4 and 6, for example, 5. In fact, the number of layers 121 is related to the total thickness of the second layer 120 and the thickness of the layers 121. Specifically, if the total thickness of the second layer 120 is large, the number of layers 121 may be increased while the thickness of the layers 121 remains substantially unchanged; conversely, if the total thickness of the second layer 120 is small, the number of layers 121 may be reduced while the thickness of the layers 121 remains substantially unchanged.
[0058] In some optional implementations, the thickness of the first layer 110 may be between 110 mm and 130 mm, such as 120 mm, to provide sufficient support and structural strength.
[0059] It should be understood that the above descriptions about the thickness of the first layer 110, the layer 121, the third layer 130, and the description about the number of the layers 121 are only exemplary descriptions of the embodiments of the utility model, and cannot be used as a limitation on the scope of implementation of the furnace bottom insulation structure 100 provided by the utility model. In fact, the thickness of the first layer 110, the layer 121, the third layer 130, and the number of the layers 121 can also be set to other values as long as they do not affect the use.
[0060] The above are only preferred implementations of the present invention. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principles of the present invention. These improvements and modifications should also be regarded as the protection scope of the present invention.
Claims
1. A furnace bottom insulation structure of a single crystal furnace, arranged in a furnace body of the single crystal furnace and located at the bottom of the furnace body, characterized in that: The furnace bottom insulation structure includes a first layer, a second layer and a third layer, the first layer is located at the bottom, the second layer is located on the upper side of the first layer, and the third layer is located on the upper side of the second layer. The first layer adopts a hard insulation component, the second layer adopts a soft insulation component, and the third layer also adopts a hard insulation component.
2. The bottom insulation structure of the single crystal furnace according to claim 1, characterized in that: The third layer includes a main body and an annular portion, wherein the annular portion is detachably connected to the main body, and the annular portion is configured to be able to be installed in an outer sleeve on a heating element in the single crystal furnace.
3. The bottom insulation structure of the single crystal furnace according to claim 2, characterized in that: The main body is provided with a groove-shaped or hole-shaped mounting portion, and the annular portion is arranged in the mounting portion.
4. The bottom insulation structure of the single crystal furnace according to claim 1, characterized in that: The third layer is also provided with avoidance holes.
5. The bottom insulation structure of the single crystal furnace according to claim 1, characterized in that: The third layer is also provided with exhaust holes.
6. The bottom insulation structure of a single crystal furnace according to any one of claims 1 to 5, characterized in that: The thickness of the first layer is between 110 mm and 130 mm, and the thickness of the third layer is between 45 mm and 55 mm.
7. The bottom insulation structure of a single crystal furnace according to any one of claims 1 to 5, characterized in that: The second layer includes a plurality of layers, and the layers are stacked.
8. The bottom insulation structure of the single crystal furnace according to claim 7, characterized in that: The thickness of the layer is between 8 mm and 12 mm.
9. The bottom insulation structure of a single crystal furnace according to any one of claims 1 to 5, characterized in that: The soft heat-insulating component and the hard heat-insulating component are both carbon fiber felt.
10. A single crystal furnace, characterized in that: It comprises a furnace body, the bottom of which is provided with a furnace bottom insulation structure, and the furnace bottom insulation structure is the furnace bottom insulation structure of the single crystal furnace according to any one of claims 1-9.